CN219886229U - Reaction chamber structure of silicon epitaxial device - Google Patents
Reaction chamber structure of silicon epitaxial device Download PDFInfo
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- CN219886229U CN219886229U CN202321207415.7U CN202321207415U CN219886229U CN 219886229 U CN219886229 U CN 219886229U CN 202321207415 U CN202321207415 U CN 202321207415U CN 219886229 U CN219886229 U CN 219886229U
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- fixedly connected
- reaction chamber
- equipment box
- silicon epitaxial
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005192 partition Methods 0.000 claims abstract description 8
- 150000003376 silicon Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000009434 installation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a reaction chamber structure of silicon epitaxial equipment, which comprises a base and an adjusting structure, wherein the top of the base is fixedly connected with an equipment box, the middle part of the inside of the equipment box is fixedly connected with a vertical partition plate, the upper part of the right side of the equipment box is provided with an air chamber, the lower part of the right side of the equipment box is provided with a water chamber, the left side of the inside of the equipment box is provided with a reaction chamber, and the adjusting structure is arranged on the left side of the inside of the equipment box; the adjusting structure comprises a diaphragm plate, the right side of the diaphragm plate is fixedly connected with a sliding block, the left side of the sliding block is fixedly connected with a connecting column, the left side of the connecting column is fixedly connected with a supporting rod, and the rear part of the supporting rod is spliced with a driving motor. The reaction chamber structure of the silicon epitaxial device has the advantages that the adjusting structure is arranged between the two reaction chambers in the device box, and the adjusting structure can flexibly adjust the spacing space between the two reaction chambers, so that the practicability of the reaction chamber structure is enhanced.
Description
Technical Field
The utility model relates to the technical field of semiconductor processing, in particular to a reaction chamber structure of silicon epitaxial equipment.
Background
The silicon epitaxy process is to deposit and grow a layer of monocrystalline silicon with uniform thickness and resistivity on a silicon wafer substrate, and a reaction chamber frame of the silicon epitaxy equipment is used for installing a silicon epitaxy reaction chamber, a waterway system, a gas circuit system, an electric system and the like for assisting the silicon epitaxy reaction; the reaction temperature of the silicon epitaxy process reaches 1150 ℃, and process gases such as hydrogen, silane and the like are needed, wherein gas supply of a gas circuit system is needed; a water cooling system is required to provide circulating cooling water for the reaction chamber; an electrical system is required to supply power.
The reaction chamber structure of the silicon epitaxial device in China patent CN216919484U is provided with a relatively independent gas circuit system installation chamber, a water circuit system installation chamber, an electric system installation chamber and a reaction chamber installation chamber for installing the reaction chamber, wherein the distribution of the chambers of each functional system is reasonable, the mutual interference among the gas circuit system, the water circuit system and the electric system is reduced, the water circuit system installation chamber is arranged below the gas circuit system installation chamber, the normal operation of other functional systems is influenced when water leakage can be avoided, and the silicon epitaxial reaction in the reaction chamber is ensured to be smoothly carried out.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model provides a reaction chamber structure of silicon epitaxial equipment, which is provided with an adjusting structure arranged between two reaction chambers in an equipment box, wherein the adjusting structure can flexibly adjust the spacing space between the two reaction chambers of a baffle plate, thereby enhancing the practicability of the reaction chamber structure and the like and solving the problem that the reaction chamber structure has limitation.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a reaction chamber structure of silicon epitaxial equipment, includes base and regulation structure, base top fixedly connected with equipment box, equipment box inside middle part fixedly connected with erects the baffle, equipment box right side upper portion has seted up the gas chamber, equipment box right side lower part has seted up the water chamber, reaction chamber has been seted up in equipment box inside left side, regulation structure all installs in equipment box inside left side.
The adjusting structure comprises a diaphragm plate, the right side of the diaphragm plate is fixedly connected with a sliding block, the left side of the sliding block is fixedly connected with a connecting column, the left side of the connecting column is fixedly connected with a supporting rod, and the rear part of the supporting rod is spliced with a driving motor.
Further, universal wheels are rotatably connected to the left side and the right side of the bottom of the base, and a handle is fixedly connected to the upper portion of the right side of the equipment box.
Further, equipment box top right side fixedly connected with top case, top incasement portion fixedly connected with fan.
Further, the inside upper portion swing joint of top case has the filter, the dead ahead fixedly connected with handle of top case, handle and filter fixed connection.
Further, the right side of top box top intercommunication has the tuber pipe, the left side intercommunication of top box has the air-supply line, air-supply line and equipment box intercommunication.
Further, the direction of the output end of the driving motor is right in front, and the output end of the driving motor is fixedly connected with a gear.
Further, a movable groove is formed in the left side of the equipment box, a rack is fixedly connected to the inside of the movable groove, and the gear is meshed with the rack.
Further, a chute is formed in the vertical partition plate, and the sliding block movably slides in the chute.
Compared with the prior art, the technical scheme of the utility model has the following beneficial effects:
the reaction chamber structure of the silicon epitaxial device has the advantages that the adjusting structure is arranged between the two reaction chambers in the device box, and the adjusting structure can flexibly adjust the spacing space between the two reaction chambers, so that the practicability of the reaction chamber structure is enhanced.
Drawings
FIG. 1 is a schematic cross-sectional view of the structure of the present utility model;
FIG. 2 is an enlarged schematic view of the gear, rack and diaphragm plate of FIG. 1 according to the present utility model;
figure 3 is a side view of the gear and support bar configuration of figure 2 of the present utility model.
In the figure: 1 base, 2 equipment box, 3 handles, 4 gas chambers, 5 water chambers, 6 reaction chambers, 7 top boxes, 8 fans, 9 vertical partition boards, 10 racks, 11 movable grooves, 12 gears, 13 support rods, 14 transverse partition boards, 15 connecting columns, 16 sliding blocks, 17 sliding grooves and 18 driving motors.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Embodiment one: referring to fig. 1, a reaction chamber structure of a silicon epitaxial device in this embodiment includes a base 1 and an adjusting structure, wherein a device box 2 is fixedly connected to the top of the base 1, a vertical partition 9 is fixedly connected to the middle inside the device box 2, an air chamber 4 is formed in the upper right side of the device box 2, a water chamber 5 is formed in the lower right side of the device box 2, a reaction chamber 6 is formed in the left inside the device box 2, and the adjusting structure is mounted on the left inside of the device box 2.
The universal wheels are rotatably connected to the left side and the right side of the bottom of the base 1 in the embodiment, and the handle 3 is fixedly connected to the upper right side of the equipment box 2.
Wherein, the universal wheel cooperation handle 3 can make equipment box 2 carry out nimble displacement.
The right side of the top of the equipment box 2 in the embodiment is fixedly connected with a top box 7, and a fan 8 is fixedly connected inside the top box 7.
Wherein, fan 8 belongs to and uses after current ripe technique can direct mount.
In the embodiment, a filter plate is movably connected to the upper part inside the top box 7, a handle is fixedly connected to the right front of the top box 7, and the handle is fixedly connected with the filter plate.
In this embodiment, an air outlet pipe is communicated with the right side of the top box 7, an air inlet pipe is communicated with the left side of the top box 7, and the air inlet pipe is communicated with the equipment box 2.
The left and right sides of the filter plate are movably connected with the sliding grooves in the top box 7 through sliding blocks.
Embodiment two: referring to fig. 1-3, on the basis of the first embodiment, the adjusting structure includes a diaphragm 14, a slider 16 is fixedly connected to the right side of the diaphragm 14, a connecting post 15 is fixedly connected to the left side of the slider 16, a supporting rod 13 is fixedly connected to the left side of the connecting post 15, and a driving motor 18 is inserted to the rear portion of the supporting rod 13.
In this embodiment, the direction of the output end of the driving motor 18 is right in front, and the output end of the driving motor 18 is fixedly connected with the gear 12.
The outer sleeve of the driving motor 18 is provided with a limiting frame, the limiting frame is fixedly connected with the supporting rod 13, and the limiting frame can limit and support the driving motor 18.
The movable groove 11 is formed in the left side of the equipment box 2 in the embodiment, the rack 10 is fixedly connected to the equipment box 2 in the movable groove 11, and the gear 12 is in meshed connection with the rack 10.
In this embodiment, a chute 17 is formed in the vertical partition 9, and a slider 16 is movably slid in the chute 17.
By adopting the technical scheme, the device has the advantages that the adjusting structure is arranged between the two reaction chambers 6 in the equipment box 2, and the diaphragm 14 can be flexibly adjusted by the adjusting structure to be positioned in the interval space between the two reaction chambers 6, so that the practicability of the reaction chamber structure is enhanced.
The working principle of the embodiment is as follows:
when the space between the two reaction chambers 6 in the equipment box 2 needs to be adjusted, the driving motor 18 operates to drive the gear 12 to rotate, when the gear 12 rotates, the diaphragm 14 can be driven to move up and down by matching with the rack 10 on one side of the equipment box 2, and when the diaphragm 14 moves, the sliding block 16 on one side of the diaphragm 14 can slide in the sliding groove 17 of the vertical diaphragm 9, so that the diaphragm 14 can be adjusted up and down normally.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The utility model provides a reaction chamber structure of silicon epitaxial equipment, includes base (1) and regulation structure, its characterized in that: the device comprises a base (1), wherein an equipment box (2) is fixedly connected to the top of the base (1), a vertical partition plate (9) is fixedly connected to the middle part inside the equipment box (2), an air chamber (4) is formed in the upper part of the right side of the equipment box (2), a water chamber (5) is formed in the lower part of the right side of the equipment box (2), a reaction chamber (6) is formed in the left side inside the equipment box (2), and the adjusting structures are all arranged on the left side inside the equipment box (2);
the adjusting structure comprises a diaphragm plate (14), a sliding block (16) is fixedly connected to the right side of the diaphragm plate (14), a connecting column (15) is fixedly connected to the left side of the sliding block (16), a supporting rod (13) is fixedly connected to the left side of the connecting column (15), and a driving motor (18) is inserted into the rear portion of the supporting rod (13).
2. A reaction chamber structure of a silicon epitaxial apparatus according to claim 1, wherein: the universal wheels are rotatably connected to the left side and the right side of the bottom of the base (1), and the handle (3) is fixedly connected to the upper portion of the right side of the equipment box (2).
3. A reaction chamber structure of a silicon epitaxial apparatus according to claim 1, wherein: the right side of the top of the equipment box (2) is fixedly connected with a top box (7), and a fan (8) is fixedly connected inside the top box (7).
4. A reaction chamber structure of a silicon epitaxial apparatus according to claim 3, characterized in that: the filter plate is movably connected to the upper portion inside the top box (7), a handle is fixedly connected to the right front of the top box (7), and the handle is fixedly connected with the filter plate.
5. A reaction chamber structure of a silicon epitaxial apparatus according to claim 3, characterized in that: the right side of the top box (7) is communicated with an air outlet pipe, the left side of the top box (7) is communicated with an air inlet pipe, and the air inlet pipe is communicated with the equipment box (2).
6. A reaction chamber structure of a silicon epitaxial apparatus according to claim 1, wherein: the direction of the output end of the driving motor (18) is right in front, and the output end of the driving motor (18) is fixedly connected with a gear (12).
7. A reaction chamber structure of a silicon epitaxial apparatus as set forth in claim 6 wherein: the movable groove (11) is formed in the left side of the equipment box (2), the rack (10) is fixedly connected to the equipment box (2) and located in the movable groove (11), and the gear (12) is connected with the rack (10) in a meshed mode.
8. A reaction chamber structure of a silicon epitaxial apparatus according to claim 1, wherein: a sliding groove (17) is formed in the vertical partition plate (9), and the sliding block (16) movably slides in the sliding groove (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321207415.7U CN219886229U (en) | 2023-05-18 | 2023-05-18 | Reaction chamber structure of silicon epitaxial device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321207415.7U CN219886229U (en) | 2023-05-18 | 2023-05-18 | Reaction chamber structure of silicon epitaxial device |
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| Publication Number | Publication Date |
|---|---|
| CN219886229U true CN219886229U (en) | 2023-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321207415.7U Active CN219886229U (en) | 2023-05-18 | 2023-05-18 | Reaction chamber structure of silicon epitaxial device |
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| Country | Link |
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| CN (1) | CN219886229U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117005019A (en) * | 2023-10-07 | 2023-11-07 | 江苏格林保尔光伏有限公司 | Top-Con monocrystalline silicon battery sheet material preparation equipment and preparation method thereof |
-
2023
- 2023-05-18 CN CN202321207415.7U patent/CN219886229U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117005019A (en) * | 2023-10-07 | 2023-11-07 | 江苏格林保尔光伏有限公司 | Top-Con monocrystalline silicon battery sheet material preparation equipment and preparation method thereof |
| CN117005019B (en) * | 2023-10-07 | 2023-12-01 | 江苏格林保尔光伏有限公司 | Top-Con monocrystalline silicon battery sheet material preparation equipment and preparation method thereof |
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