CN219847830U - High osmotic pressure microneedle structure - Google Patents
High osmotic pressure microneedle structure Download PDFInfo
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- CN219847830U CN219847830U CN202222930074.8U CN202222930074U CN219847830U CN 219847830 U CN219847830 U CN 219847830U CN 202222930074 U CN202222930074 U CN 202222930074U CN 219847830 U CN219847830 U CN 219847830U
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- microneedles
- silicon wafer
- microneedle
- silicon
- wedge
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- 230000003204 osmotic effect Effects 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 12
- 230000035515 penetration Effects 0.000 abstract description 10
- 230000008591 skin barrier function Effects 0.000 abstract description 6
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 230000037368 penetrate the skin Effects 0.000 abstract 2
- 210000003491 skin Anatomy 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000003814 drug Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000740 bleeding effect Effects 0.000 description 2
- 210000004207 dermis Anatomy 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000002615 epidermis Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000029087 digestion Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000010579 first pass effect Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000037317 transdermal delivery Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000001835 viscera Anatomy 0.000 description 1
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Abstract
The utility model relates to the technical field of micro-nano processing, in particular to a high osmotic pressure microneedle structure, which comprises a silicon wafer and microneedles, wherein a plurality of microneedles are fixedly connected to the upper part of the silicon wafer, grooves are formed in the microneedles, the microneedles are manufactured by adopting a deep silicon dry etching process and a monocrystalline silicon anisotropic etching process, a plurality of microneedles are arranged on the upper wall of the silicon wafer, the microneedles protrude out of the upper wall of the silicon wafer, the microneedles are in a wedge shape, grooves are formed in the wedge-shaped inclined surfaces of the microneedles, the arrangement mode of the microneedles on the upper wall of the silicon wafer can be random, the depth of penetrating the skin is accurately controlled by controlling the lengths of the microneedles protruding out of the silicon wafer, the penetration force of the skin barrier is provided by the wedge-shaped inclined surfaces of the microneedles, the osmotic pressure is provided for liquid by the groove-shaped structure, the skin penetration force of the microneedles can be ensured, and after the microneedles penetrate the skin can be ensured to penetrate the skin, and good liquid osmotic force can be provided by utilizing air in the grooves.
Description
Technical Field
The utility model relates to the technical field of micro-nano processing, in particular to a high osmotic pressure microneedle structure.
Background
The microneedle generally refers to a needle array with a length of less than a few millimeters, can open a plurality of permeation channels on internal organs or skin to realize drug delivery, generally can precisely control penetration depth, and forms regional channels to enable the drug to be fully absorbed in the channel regions, and is commonly used for skin-related disease treatment, skin improvement and the like. The micro-needle technology is mainly characterized in that the traditional medicine intake mode mainly comprises oral administration, smearing and injection, but the oral administration medicine has a first-pass metabolism effect, the digestion and decomposition of liver and intestines and stomach can reduce a plurality of medicine effects, the absorption of the medicine is greatly limited by the skin barrier when the medicine is smeared, the injection mode is the most direct and efficient, and the process brings great fear and pain to patients; researchers have begun considering the way in which the skin barrier is opened by means of tools to re-deliver drugs, evolving to the technology of microneedle transdermal delivery.
The most common microneedle at present is an array formed by arranging a plurality of metal needles, the length of the needles is 0.5-3mm, the penetration depth reaches the dermis layer, the pain is obvious when the microneedle is used, the microneedle is generally matched with epidermis dressing, bleeding is accompanied in the process, the density of the microneedle is low due to the limitation of a processing technology, and less than 100 channels can be formed in each penetration. The advanced micro-needle is prepared by processing monocrystalline silicon material, and the most tip diameter can be smaller than 1 micron by adopting processing technologies such as semiconductor photoetching, etching and the like. Silicon microneedles are typically 0.1-0.3mm in length, primarily for epidermal layer penetration, because blood vessels and most nerves of the dermis layer are avoided, the use is generally painless or slightly painful, and without bleeding, hundreds of penetration channels can be formed per penetration. Silicon microneedles are also often used as injection molds to further prepare soluble microneedle patch products by a flip-mold injection process.
The prior art CN206837233U discloses a silicon microneedle substrate, which comprises a silicon substrate, wherein a plurality of silicon microneedles are arranged on the silicon substrate, the silicon microneedle patterns are regularly arranged, the height range of the silicon microneedle patterns is 50-1000 mu m, the diameter of the tail end of the upper section of the silicon microneedle patterns is lower than 10 mu m, the silicon microneedles are made of silicon microneedle patterns obtained by corroding the silicon substrate by wet etching, the silicon microneedles are distributed in two sections, the lower sections of the silicon microneedles are in a polygonal cone shape, and the upper sections of the silicon microneedles are in pyramid structures.
In summary, the silicon microneedles in the prior art are manufactured by wet etching technology, and the anisotropic etching characteristic of monocrystalline silicon is utilized to form the solid microneedle structure with a polygonal pyramid shape, which can easily break through the skin barrier, form micro channels on the skin, allow subsequent liquid medicine to permeate into the skin through the channels, and then, because the surface of the needle body is smooth, the channels are easily closed in a short time when the needle body is pulled out, so that the subsequent liquid permeability is insufficient.
Disclosure of Invention
In order to solve the problems, the utility model provides a high osmotic pressure microneedle structure.
In order to achieve the above purpose, the technical scheme of the utility model is as follows:
the high-osmotic pressure microneedle structure comprises a silicon wafer and microneedles, wherein the upper part of the silicon wafer is fixedly connected with a plurality of microneedles, grooves are formed in the microneedles, and the microneedles are manufactured by a deep silicon dry etching process and a monocrystalline silicon anisotropic etching process.
Further, the micro-needle is in a wedge shape, and the groove is formed in the wedge-shaped inclined plane of the micro-needle.
Further, the micro needle tip piercing portion is disposed away from the upper portion of the silicon wafer.
Further, the included angle between the taper inclined plane of the microneedle and the upper part of the silicon wafer is 58.74-60.74 degrees.
Further, the grooves formed on the wedge-shaped inclined planes of the microneedles are all the same in orientation.
Further, the directions of the grooves formed on the wedge-shaped inclined planes of the microneedles are different.
Further, the silicon wafer is a (100) type silicon wafer.
Further, the silicon wafer is provided with a flat plate structure.
Compared with the prior art, the utility model has the beneficial effects that:
(1) The silicon wafer upper wall is provided with the plurality of microneedles, the microneedles are arranged to protrude out of the silicon wafer upper wall, the microneedles are in a wedge shape, the wedge-shaped inclined surfaces of the microneedles are provided with grooves, the arrangement mode of the microneedles on the silicon wafer upper wall can be arbitrary, the depth of penetrating into the skin is accurately controlled by controlling the length of the microneedles protruding out of the silicon wafer, the penetration force of the microneedles for breaking through the skin barrier is provided by the wedge-shaped structure of the microneedles, the osmotic pressure is provided for liquid by the groove-shaped structure of the tapered inclined surfaces of the microneedles, the skin penetration of the microneedles can be ensured, and meanwhile, the good liquid osmotic force can be provided by utilizing the air in the grooves after the microneedles penetrate into the skin.
(2) The micro-needle is manufactured by adopting a deep silicon dry etching process and a monocrystalline silicon anisotropic etching process, and the wedge-shaped micro-needle with the groove structure can be manufactured by adopting the two processes.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present utility model;
FIG. 2a is a longitudinal cross-sectional view of the structure presented in step (1) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model;
FIG. 2b is a top view of the structure shown in step (1) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model (the dotted line represents a top projection line);
FIG. 3a is a longitudinal cross-sectional view of the structure presented in step (2) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model;
FIG. 3b is a top view of the structure shown in step (2) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model (the dotted line represents a top projection line);
FIG. 4a is a longitudinal cross-sectional view of the structure presented in step (3) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model;
FIG. 4b is a top view of the structure shown in step (3) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model (the dotted line represents a top projection line);
FIG. 5a is a longitudinal cross-sectional view of the structure presented in step (4) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model;
FIG. 5b is a top view of the structure shown in step (4) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model (the dotted line represents a top projection line);
FIG. 6a is a longitudinal cross-sectional view of the structure presented in step (5) of the method for fabricating a single crystal silicon microneedle structure of the present utility model;
FIG. 6b is a top view of the structure shown in step (5) of the method for fabricating a single crystal silicon microneedle structure according to the present utility model (the dashed lines indicate the top projection lines);
FIG. 7a is a longitudinal cross-sectional view of the structure presented in step (6) of the method for fabricating a single crystal silicon microneedle structure of the present utility model;
fig. 7b is a top view (dotted lines indicate top projection lines) of the structure shown in step (6) in the method for fabricating a single crystal silicon microneedle structure according to the present utility model.
Reference numerals illustrate:
1. a silicon wafer; 11. a surface; 12. a surface B; 2. a photoresist; 3. a contour window; 4. a groove; 5. a corrosion protection film; 6. a microneedle.
Detailed Description
The technical solutions of the present utility model will be clearly described below with reference to the accompanying drawings, and it is obvious that the described embodiments are not all embodiments of the present utility model, and all other embodiments obtained by a person skilled in the art without making any inventive effort are within the scope of protection of the present utility model. It should be noted that, the positional or positional relationship indicated by the terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
As shown in fig. 1, the utility model provides a high osmotic pressure microneedle structure, which comprises a silicon wafer 1 and microneedles 6, wherein the silicon wafer 1 is a (100) silicon wafer, a plurality of microneedles 6 are fixedly connected to the upper part of the silicon wafer 1, the microneedles 6 are arranged to protrude out of the upper wall of the silicon wafer 1, the arrangement mode of the microneedles 6 on the upper part of the silicon wafer 1 can be random, the silicon wafer 1 is in a flat plate structure, the microneedles 6 are in a wedge-shaped structure, the sharp-pointed parts of the microneedles 6 are far away from the upper surface of the silicon wafer 1, the wedge-shaped inclined surfaces of the microneedles 6 are provided with grooves 4, the cross section of the grooves 4 along the inclined surfaces of the microneedles 6 is elliptical, the included angle between the wedge-shaped inclined surfaces of the microneedles 6 and the upper wall of the silicon wafer 1 is 58.74-60.74 degrees, the microneedles 6 are manufactured by adopting a deep silicon dry etching process and a monocrystalline silicon anisotropic etching process, and the wedge-shaped microneedles 6 with the groove 4 structure can be manufactured in batch.
The microneedle 6 is set to sharp wedge, be equipped with recess 4 structure on the wedge inclined plane, microneedle 6 base is established to silicon chip 1, and silicon chip 1 establishes to flat structure, realizes accurate control and pierces the degree of depth of skin through controlling microneedle 6 protrusion silicon chip 1's length, and the wedge structure of microneedle 6 provides the puncture power that breaks through skin barrier, and the groove structure that microneedle 6 wedge inclined plane set up provides osmotic pressure for liquid, can guarantee that microneedle 6 pierces skin, can guarantee simultaneously that microneedle 6 pierces the skin after, utilizes the inside air of recess 4 groove, can provide fine liquid osmotic force.
It should be noted that, the components related to the present utility model are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complex.
As shown in fig. 2a, 2b, 3a, 3b, 4a, 4b, 5a, 5b, 6a, 6b, 7a and 7b, the method for manufacturing the high osmotic pressure microneedle 6 structure comprises the following steps:
s1, taking a (100) silicon wafer 1, wherein the silicon wafer 1 comprises two surfaces, namely an A surface 11 and a B surface 12, and the B surface 12 is positioned on the back of the A surface 11; coating photoresist 2 on the surface 11 of the silicon wafer 1A, and then manufacturing an etching window on the surface 11 of the silicon wafer 1 by adopting an ultraviolet lithography method;
s2, etching an etching window of the A face 11 of the silicon wafer 1 by using a deep silicon dry etching process, forming a groove 4 with the depth of t1 in the etching window, and then removing the photoresist 2 of the A face 11;
s3, depositing and forming a corrosion protection film 5 on the A surface 11 of the silicon wafer 1, the B surface 12 of the silicon wafer 1, the bottom of the groove 4 and the inner side wall of the groove 4, wherein the thickness of the corrosion protection film 5 is h;
s4, removing the corrosion protection film 5 on the upper surface of the A surface 11 of the silicon wafer 1, and reserving the corrosion protection film 5 on the inner wall of the A surface 11;
s5, putting the silicon wafer 1 into corrosive liquid for corrosion, wherein the A face 11 of the silicon wafer 1 forms a wedge-shaped microneedle 6 structure in the corrosion process, and a groove 4 structure is formed on a wedge-shaped inclined plane;
and S6, removing the residual corrosion protection film 5 on the surface of the silicon wafer 1.
Specifically, the etching window in step (1) is the contour window 3 of the microneedle 6.
The etching depth t1 in the step (2) is a preset height of the micro-needle 6.
The corrosion protection film 5 formed in the step (3) is a silicon nitride film prepared by adopting a low-pressure vapor deposition method.
The etching liquid in the step (5) is monocrystalline silicon anisotropic etching liquid, and the monocrystalline silicon anisotropic etching liquid comprises potassium hydroxide solution and TMAH solution.
The angle between the inclined plane of the wedge-shaped microneedle 6 structure formed by the surface 11 of the silicon wafer 1A in the step (5) and the bottom surface is 58.74-60.74 degrees.
The above embodiments are only for illustrating the technical solution of the present utility model and not for limiting the same, and although the present utility model has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the scope of the technical solution of the present utility model, which is intended to be covered by the claims of the present utility model.
Claims (7)
1. The high-osmotic pressure microneedle structure is characterized by comprising a silicon wafer and microneedles, wherein the upper part of the silicon wafer is fixedly connected with a plurality of microneedles, grooves are formed in the microneedles, and the microneedles are prepared by adopting a deep silicon dry etching process and a monocrystalline silicon anisotropic etching process;
the micro-needle is in a wedge shape, and the groove is formed in the wedge-shaped inclined plane of the micro-needle.
2. The high osmotic pressure microneedle structure of claim 1, wherein said microneedle tip is disposed away from said upper portion of said silicon wafer.
3. The high osmotic pressure microneedle structure of claim 1, wherein the angle between the microneedle wedge bevel and the upper portion of the silicon wafer is 58.74 ° -60.74 °.
4. A high osmotic pressure microneedle structure according to claim 3, wherein the grooves of the microneedle wedge-shaped bevel are all oriented identically.
5. A high osmotic pressure microneedle structure according to claim 3, wherein the grooves of the microneedle wedge-shaped bevel are all oriented differently.
6. The high osmotic pressure microneedle structure according to claim 1, wherein the silicon wafer is a (100) silicon wafer.
7. The high osmotic pressure microneedle structure according to claim 6, wherein the silicon wafer is provided in a flat plate structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222930074.8U CN219847830U (en) | 2022-11-03 | 2022-11-03 | High osmotic pressure microneedle structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222930074.8U CN219847830U (en) | 2022-11-03 | 2022-11-03 | High osmotic pressure microneedle structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219847830U true CN219847830U (en) | 2023-10-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222930074.8U Active CN219847830U (en) | 2022-11-03 | 2022-11-03 | High osmotic pressure microneedle structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219847830U (en) |
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2022
- 2022-11-03 CN CN202222930074.8U patent/CN219847830U/en active Active
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