CN219811486U - Novel transient suppression diode of molybdenum sheet packaging structure - Google Patents
Novel transient suppression diode of molybdenum sheet packaging structure Download PDFInfo
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- CN219811486U CN219811486U CN202321271399.8U CN202321271399U CN219811486U CN 219811486 U CN219811486 U CN 219811486U CN 202321271399 U CN202321271399 U CN 202321271399U CN 219811486 U CN219811486 U CN 219811486U
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- Prior art keywords
- transient suppression
- suppression diode
- bottom plate
- protective
- chip
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- 230000001052 transient effect Effects 0.000 title claims abstract description 32
- 230000001629 suppression Effects 0.000 title claims abstract description 28
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000001681 protective effect Effects 0.000 claims abstract description 26
- 238000007747 plating Methods 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 238000003466 welding Methods 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- 239000004593 Epoxy Substances 0.000 claims abstract description 4
- 125000006239 protecting group Chemical group 0.000 claims abstract 4
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 238000005476 soldering Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a transient suppression diode of a novel molybdenum sheet packaging structure, wherein the structure of a tube core of the transient suppression diode sequentially comprises a radiating block, a welding sheet joint lead, a first protection substrate, a chip, a second protection substrate and a bottom plate joint welding sheet II from top to bottom; the encapsulation body encapsulates the transient suppression diode die structure; the area of the bottom plate is larger than that of the first protective group, the second protective group and the chip; the epoxy wraps the bottom plate and exposes the bottom surface, and the thickness of the packaging body around the bottom plate is 0.3-4mm; the first and second protective substrates use nickel-plated molybdenum sheets with no plating layer on the sides as protective substrates.
Description
Technical Field
The utility model relates to the field of diode manufacture, in particular to a novel molybdenum-sheet-packaged transient suppression diode.
Background
The transient voltage suppression diode (TRANSIENT VOLTAGE SUPPRESSOR) is simply TVS. The high-performance protection device is designed for solving the problems of circuit on-off, electrostatic discharge, voltage transient and current surge generated by electromagnetic interference and the like in electronic equipment, is one of the most important electronic components in an electronic circuit, and is a diode-type high-performance protection device. When the two poles of the TVS diode are impacted by reverse transient high energy, the TVS diode can be used for 10 times -12 The second-level speed changes the high resistance between the two poles into low resistance, absorbs the surge power of thousands of watts, ensures that the voltage between the two poles is clamped at a preset value, effectively protects the precise components in the electronic circuit from being damaged by various surge pulses, and has been widely applied to various civil and military electronic products. In particular, in applications in the fields of aerospace, aviation and marine engineering, naval military equipment, etc., the power requirements for transient suppression diodes are becoming higher and higher, and the requirements for stability and reliability thereof have become higher and higher. Due to the high voltage working condition, the chip is easy to work abnormally or even fail in the wet environment, and the side edge of the conventional TVS is provided with a tin coating problem before the encapsulation of the package body. The chip is prone to abnormal operation and even failure (moisture attack), so the structure of the package still needs to be improved.
The utility model ensures that the TVS device is not failed and the chip is not broken (cracks are generated) in a limit temperature difference range by a novel simple epoxy design of packaging of 1 or 2 chips and a high-power microelectronic packaging of a protection substrate with corresponding expansion coefficient. Reference is made to: xu Guishan characteristics and applications of the transient voltage suppressor TVS. World electronics, 1999 (6).
Disclosure of Invention
The utility model provides a novel transient suppression diode with a molybdenum sheet packaging structure, which can realize high-power microelectronic packaging with a novel structure and is simple, ensure that the epoxy wrapping property is superior to that of the prior product after packaging operation, and improve the yield of the transient suppression diode.
The utility model aims at realizing the technical scheme that a novel transient suppression diode of a molybdenum sheet packaging structure is characterized in that the structure of a tube core of the transient suppression diode sequentially comprises a radiating block 1, a welding sheet I2, a parallel connection wire 7, a first protection substrate, a chip 3, a second protection substrate and a bottom plate 4 from top to bottom, wherein the welding sheet I6 is connected with the welding sheet II; the encapsulation body 8 encapsulates the transient suppression diode die structure; the area of the bottom plate 4 is larger than the areas of the first and second protection substrates 5 and the chip 3; the thickness of the packaging body around the bottom plate is 0.3-4mm. The first protective substrate and the second protective substrate use nickel-plated molybdenum sheets with no plating layer at the side edges as protective substrates, so that the chips can be protected, and the reliability of the transient suppression diode can be improved; the nickel-plated molybdenum sheet with the side without plating layers can improve the yield and the reliability of the transient suppression diode.
The beneficial effects are that: compared with the prior art, the utility model has the advantages that: aiming at the problem that tin coating exists on the side before a product in the prior art is encapsulated and packaged, a nickel-plated molybdenum sheet with no plating layer on the side is used as a protective substrate, so that the chip can be protected, and the reliability of a transient suppression diode can be improved; the plating layer of the nickel-plated molybdenum sheet is changed from full wrapping to side non-plating, so that the side does not have tin coating before the encapsulation of the encapsulation body, and the yield of the transient suppression diode is improved. (1) The environment adaptability is wide, and the environment can bear the use environment of minus 50 ℃ to 125 ℃. Due to the adoption of the specific design and materials, the utility model can be ensured to work normally under the extreme temperature condition. (2) The utility model has the advantages of fast heat dissipation, strong stability and reliability and long service life. Due to the adoption of the targeted design and the packaging design of materials, the chip is effectively protected, and the stability and the reliability of the transient suppression diode are improved.
Drawings
FIG. 1 is a schematic diagram of a novel packaged TVS diode (dual diode die);
FIG. 2 is a top view of FIG. 1;
FIG. 3 is an internal block diagram of a novel packaged TVS diode;
FIG. 4 is a front plan view of FIG. 3;
FIG. 5 is a reverse side plan view of FIG. 3;
fig. 6 is a schematic perspective view of a novel packaged transient suppression diode.
Fig. 7 is a schematic diagram of the structure of a novel packaged transient suppression diode (single diode die).
The reference numerals in the figures illustrate:
1. a heat dissipation block; 2. a first soldering lug; 3. (first and second) chips; 4. a bottom plate; 5. (first, second, third) protective substrates; 6. a second soldering lug; 7. a lead wire; 8. and (5) packaging the package.
Detailed Description
The utility model will now be described in detail with reference to the drawings and the accompanying specific examples.
The transient suppression diode tube core structure sequentially comprises a heat dissipation block 1, a welding lug I2, a parallel connection lead 7, a first protection substrate, a chip 3, a second protection substrate and a bottom plate 4 from top to bottom, wherein the welding lug II 6 is connected with the bottom plate 4; the encapsulation body 8 encapsulates the transient suppression diode die structure; the area of the bottom plate 4 is larger than the areas of the first and second protection substrates 5 and the chip 3; the thickness of the packaging body around the bottom plate is 0.3-4mm. The protective substrate uses a nickel-plated molybdenum sheet with no plating layer at the side as the protective substrate;
dual core embodiment: product name: as shown in fig. 1, 2 and 3, the TPK30KP400A includes a heat dissipating block 1, a first bonding pad 2, a lead 7, a first protective substrate 5, a first chip 3, a second protective substrate 5, a second chip 3, a third protective substrate 5, a bottom plate 4, a second bonding pad 6, and a package 8. The lead 7 is connected with the heat sink 1 and the upper first protective substrate 5 shown in fig. 1 through the first soldering lug 2 by the corresponding carbon boat assembled as shown in fig. 1, the first and second protective substrates 5 are connected with the first chip 3 through the second soldering lugs 6, the second and third protective substrates 5 are connected with the second chip 3 through the second soldering lugs 6, and the lower bottom plate 4 is connected with the third protective substrate 5 through the second soldering lugs 6. The protective substrate uses a nickel-plated molybdenum sheet with no plating layer at the side as the protective substrate; after assembly, the semi-finished product is welded by a BTU (the BTU can prevent oxidation), a soldering lug can use high-temperature lead-tin solder with the melting temperature of about 310 ℃, a protective substrate 5 can use nickel-plated molybdenum sheets, and the chip can be effectively protected due to lower thermal expansion coefficient of molybdenum; the encapsulation body 8 is encapsulated by an encapsulation mold, the encapsulation body 8 adopts epoxy resin, the heat dissipation performance is good, fig. 4 and 5 show diagrams of the front side and the back side of the utility model, and fig. 6 shows a perspective schematic diagram of the utility model. The nickel-plated molybdenum sheet with no plating layer at the side is plated with nickel only on the front and back surfaces of the molybdenum sheet.
The upper part of the packaging body (8) is provided with a hole, the heat dissipation block (1) is arranged in the hole, and the top of the heat dissipation block (1) is flush with the top of the packaging body (8). The upper end surface of the heat sink is exposed from the package 8.
The first, second and third protective substrates (5) are protective substrates, and nickel-plated molybdenum sheets with no plating layers at the side edges are used as the protective substrates;
the chip (3) is a transient suppression diode chip, a Schottky chip or a high-voltage diode chip and the like.
The bottom plate (4) is a copper bottom plate or a molybdenum-copper alloy bottom plate.
The utility model and its embodiments have been described above schematically, without limitation, and the actual construction is not limited to this, but is shown in the drawings as one of its embodiments. Therefore, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical scheme are not creatively designed without departing from the gist of the present utility model.
Claims (3)
1. The transient suppression diode of the novel molybdenum sheet packaging structure is characterized in that the tube core structure of the transient suppression diode sequentially comprises a radiating block, a welding sheet joint lead, a first protection substrate, a chip, a second protection substrate and a bottom plate joint welding sheet II from top to bottom; the encapsulation body encapsulates the transient suppression diode die structure; the area of the bottom plate is larger than that of the first protective group, the second protective group and the chip; the epoxy wraps the bottom plate and exposes the bottom surface, and the thickness of the packaging body around the bottom plate is 0.3-4mm; the first and second protective substrates use nickel-plated molybdenum sheets with no plating layer on the sides as protective substrates.
2. The transient suppression diode of the novel molybdenum sheet package structure of claim 1, wherein: the upper part of the packaging body (8) is provided with a hole, the heat dissipation block (1) is arranged in the hole, and the top of the heat dissipation block (1) is flush with the top of the packaging body (8); the upper end surface of the heat dissipation block is exposed from the package (8).
3. The transient suppression diode of the novel molybdenum sheet package structure according to claim 1 or 2, characterized in that: the first protective substrate (5) and the second protective substrate (5) are nickel-plated molybdenum sheets with side non-plating layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321271399.8U CN219811486U (en) | 2023-05-24 | 2023-05-24 | Novel transient suppression diode of molybdenum sheet packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321271399.8U CN219811486U (en) | 2023-05-24 | 2023-05-24 | Novel transient suppression diode of molybdenum sheet packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219811486U true CN219811486U (en) | 2023-10-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321271399.8U Active CN219811486U (en) | 2023-05-24 | 2023-05-24 | Novel transient suppression diode of molybdenum sheet packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219811486U (en) |
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2023
- 2023-05-24 CN CN202321271399.8U patent/CN219811486U/en active Active
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