CN200990387Y - Large power LED chip package structure and large power LED illuminating device - Google Patents
Large power LED chip package structure and large power LED illuminating device Download PDFInfo
- Publication number
- CN200990387Y CN200990387Y CNU2006201081488U CN200620108148U CN200990387Y CN 200990387 Y CN200990387 Y CN 200990387Y CN U2006201081488 U CNU2006201081488 U CN U2006201081488U CN 200620108148 U CN200620108148 U CN 200620108148U CN 200990387 Y CN200990387 Y CN 200990387Y
- Authority
- CN
- China
- Prior art keywords
- led chip
- aluminium base
- power led
- insulating oxide
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model relates to an encapsulating structure for a high power LED chip. The surface of an aluminium base is an insulating oxic horizon, and the LED chip is directly connected on the insulating oxic horizon and directly dissipates heat through the aluminium base, and the non component installing face of the aluminium base is made to a radiator structure with a heat dissipating wing, which is directly used for dissipating heat. The utility model has the advantages of that: firstly, the LED chip and the insulating oxic horizon of the aluminium base are directly connected and the heat dissipating is directly held (the non component installing face of the aluminium base is made to the shape of the heat dissipating wing), which makes the LED chip, the circuit board and the radiator integrate into a whole, and the amount caused by the thermal resistance is reduced. Synchronously, the connecting without clearance of the insulating oxic horizon and the radiator greatly reduces the thermal resistance value, thereby greatly improving the dissipating heat effect; secondly, the p n pole of the LED chip is connected with the metal layer, thus making the high power LED lighting component be realized.
Description
Technical field:
The utility model relates to a kind of encapsulating structure and high-power LED illuminator spare of high-power LED chip, belongs to the LED illuminating device and makes the field.
Background technology:
At present, use aluminium base copper clad laminate, i.e. a bonding layer insulating between aluminium sheet and copper-clad plate.Itself just has heat sinking function the circuit board of this method, and power device can directly be welded on and cover on the copper face, and it is convenient to assemble, and is widely used in the product of great power LED.But its weak point: thermal resistance can't reduce.
Summary of the invention:
Purpose of design: avoid the weak point in the background technology, a kind of encapsulating structure and high-power LED illuminator spare that can reduce the high-power LED chip thermal-conduction resistance effectively is provided.
Design: in order to realize above-mentioned purpose of design.Adopt aluminium base as the high-power LED chip substrate, because the face to aluminium base is an insulating oxide, on insulating oxide, form designed circuitous pattern (led chip installation circuit diagram) with mask or photoetching etc., method with magnetron sputtering, alternately deposition substrate film, conducting film and welding film, thereby on aluminium base, form metallization circuit layer, then packaging electronic parts (led chip) in the above with conductivity and solderability.This substrate structurally because insulating barrier is seamless the combination with aluminium base, has reduced thermal resistance to greatest extent, improves thermal diffusivity, and thermal conductivity is that 119 W/m * ° K improves the stability of circuit; And have enough intensity and favorable mechanical processing characteristics, be convenient to processing.
Aluminium base is made insulating oxide and is handled and form insulating oxide, directly be encapsulated in led chip on the insulating oxide, because great power LED its led chip of when work will produce a large amount of heats, how effectively these heats to be distributed, be the prerequisite of guaranteeing that can the LED high power valve operate as normal.Before the utility model, LED all adopts in the use the LED device is welded on the aluminium base copper clad laminate, more aluminium base copper clad laminate is installed in the such technology of heat radiation on the radiator.This mounting process is because device is more, and formed thermal resistance quantity is also many, and thermal resistance value is also big, makes the heat dissipation problem of chip not be well solved, so the application of LED has been subjected to greatly restriction.The utility model with led chip directly be connected with the aluminium base insulating oxide, directly heat radiation (the non-installed surface of aluminium base make heat radiation aliform), led chip, circuit board and radiator are integrated, reduced the quantity that thermal resistance forms, the seamless link of insulating oxide and radiator has simultaneously reduced thermal resistance value widely, thereby has improved radiating effect.The utility model provides a kind of new chip-packaging structure, has solved the technical barrier of present LED high-power chip heat radiation, has realized the exploitation and the Application Prospect of great power LED.
Technical scheme 1: the encapsulating structure of high-power LED chip, the surface of aluminium base are insulating oxide, and led chip directly is connected on the insulating oxide and by aluminium base and directly dispels the heat.
Technical scheme 2: the high-power LED illuminator spare that constitutes by aluminium base insulating oxide plate, aluminium base (5 or 6) surface is insulating oxide (4), be equipped with the metal layer (1～3) of circuitous pattern on the insulating oxide (4), encapsulation a slice or 2 or plurality of LED chip (10) are on insulating oxide, and the led chip pn utmost point (11) is connected with metal layer.
The utility model is compared with background technology, the one, led chip directly is connected with the aluminium base insulating oxide, directly dispels the heat (the non-installed surface of aluminium base is made the heat radiation aliform), led chip, circuit board and radiator are integrated, reduced the quantity that thermal resistance forms, the seamless link of insulating oxide and radiator has simultaneously reduced thermal resistance value widely, thereby has greatly improved radiating effect; The 2nd, the led chip pn utmost point is connected with metal layer, and high-power LED illuminator spare is achieved.
Description of drawings:
Fig. 1 is the direct packaged LED and the components and parts schematic diagram of the aluminium base insulating oxide circuit board of band radiator.
Embodiment:
With reference to accompanying drawing 1, the utility model is done to underdraw.
1--welds film: be mainly used in welding electronic component.Generally adopt the method for magnetron sputtering to deposit on the conducting film by conductivity such as silver or gold and weldability good metal, thickness is about 0.3～0.8 μ m.
2--conducting film: mainly play electric action, carrying certain current density, and bigger welding film and the basilar memebrane of excessive expansion difference of coefficients.Generally being the method that adopts magnetron sputtering deposits to copper or nickel or corronil on the basilar memebrane.The thickness of conducting film is 1～2 μ m.
The 3--basilar memebrane: mainly be to play with insulating oxide stronger adhesive force is arranged, and the whole metallization conductive layer of plating.Adopt the method for magnetron sputtering that chromium or titanium are deposited on the insulating oxide.The thickness of basilar memebrane is 0.1～0.15 μ m.
The 4--insulating oxide: by special anodized to aluminium, the Al with microcellular structure of formation
2O
3Structure sheaf, the about tens μ m of thickness.This layer has electrical insulation properties, and dielectric strength is according to the difference of anodized technology, 250-3000V.
The 5--aluminium base is the substrate of circuit board, select certain mechanical strength and machining property, and the suitable again aluminium sheet of doing the insulation oxidation processes is selected the trades mark such as 6061,6063,3003,1100 usually for use.
The 6--radiator is the aluminium base that is processed into the radiator shape.
The 7--electronic devices and components, usable surface mount components (SMT) or other forms of components and parts.
8--electronic devices and components scolder can adopt lead or lead-free solder as requested.
The 9--LED fluid sealant can be epoxy glue or silica gel, is used for fixing LED gold thread and packaging LED chips.
The 10--LED chip also can be other semiconductor chips.
The 11--contact conductor: be that chip electrode is extracted, normally gold thread, or aluminum steel etc.
12--chip attach layer is with on the insulating oxide of led chip attached to substrate, is glue or the eutectic coating with thermal conductive resin.
Embodiment 1: with reference to accompanying drawing 1.Aluminium base insulating oxide magnetron sputtering circuit board, 6 of aluminium sheet 5 or aluminium radiators are insulating oxide 4, are equipped with the metal layer 1～3 of circuitous pattern on the insulating oxide 4.Aluminium sheet is done the insulating oxide processing and is formed insulating oxide, adopts the method for mask or photoetching to form circuitous pattern and adopt the method for magnetron sputtering to make circuitous pattern formation metal layer on the face of insulating oxide.The method of magnetron sputtering is a prior art, is not described herein at this.Metal layer 1～3 is by 1 compound composition of basilar memebrane 3, conducting film 2, welding film, 1. basilar memebrane adopts the method for magnetron sputtering crome metal or titanium that chromium or titanium are deposited on the insulating oxide, the thickness of basilar memebrane is 0.1～0.15 mu m range and is controlled in its scope and can determines its value arbitrarily, and comprises end value.2. the conducting film method that adopts magnetron sputtering metallic copper or nickel or corronil deposits to copper or nickel or corronil on the basilar memebrane, and the thickness of conducting film is 1～2 mu m range and is controlled in its scope and can determines its value arbitrarily, and comprises end value.3. weld method that film adopts magnetron sputtering argent or gold with silver or deposition of gold to conducting film, the thickness of welding film is 0.3～0.8 mu m range and is controlled in its scope and can determines its value arbitrarily, and comprises end value.The encapsulating structure of high-power LED chip, aluminium base is made anodized, forms insulating oxide on the surface, and led chip directly is connected on the insulating oxide and by aluminium base and directly dispels the heat, the non-components and parts installed surface of aluminium base is made the heat spreader structures of making band heat radiation wing, is directly used in heat radiation.
Embodiment 2: with reference to accompanying drawing 1.The high-power LED illuminator spare that constitutes by aluminium base insulating oxide plate, aluminium base 5 or 6 surfaces are insulating oxide 4, be equipped with the metal layer 1～3 of circuitous pattern on the insulating oxide 4, encapsulation (bonding) a slice or 2 or plurality of LED chip 10 are on insulating oxide, the led chip pn utmost point 11 is connected (welding) with metal layer, circuitous pattern adopts mask or photoetching to make.Led chip 10 and insulating oxide are bonding 12, and the LED that will put behind the gold with casting glue 9 is encapsulated on the aluminium base, and led chip 10 is provided with the casting glue 9 that one deck is used to protect led chip.
What need understand is: though the foregoing description is to the utility model detailed explanation of contrasting; but these explanations are just to simple declaration of the present utility model; rather than to restriction of the present utility model; any innovation and creation that do not exceed in the utility model connotation all fall in the protection range of the present utility model.
Claims (2)
1, a kind of encapsulating structure of high-power LED chip is characterized in that: the face of aluminium base is insulating oxide (4), and led chip (10) directly is connected on the insulating oxide and by aluminium base and directly dispels the heat.
2, the encapsulating structure of great power LED according to claim 1 is characterized in that: the non-components and parts installed surface of aluminium base is made the heat spreader structures of making band heat radiation wing, is directly used in heat radiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201081488U CN200990387Y (en) | 2006-09-26 | 2006-09-26 | Large power LED chip package structure and large power LED illuminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201081488U CN200990387Y (en) | 2006-09-26 | 2006-09-26 | Large power LED chip package structure and large power LED illuminating device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201512801U Division CN201066696Y (en) | 2006-09-26 | 2006-09-26 | Encapsulation structure for high-power LED chip and high-power LED lighting part |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200990387Y true CN200990387Y (en) | 2007-12-12 |
Family
ID=38941420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006201081488U Expired - Fee Related CN200990387Y (en) | 2006-09-26 | 2006-09-26 | Large power LED chip package structure and large power LED illuminating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200990387Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891240A (en) * | 2012-09-18 | 2013-01-23 | 惠州雷曼光电科技有限公司 | Light emitting diode (LED) with inverted structure and manufacturing method thereof |
| CN101825236B (en) * | 2009-03-07 | 2013-04-24 | 富准精密工业(深圳)有限公司 | Light-emitting diode lamp |
-
2006
- 2006-09-26 CN CNU2006201081488U patent/CN200990387Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825236B (en) * | 2009-03-07 | 2013-04-24 | 富准精密工业(深圳)有限公司 | Light-emitting diode lamp |
| CN102891240A (en) * | 2012-09-18 | 2013-01-23 | 惠州雷曼光电科技有限公司 | Light emitting diode (LED) with inverted structure and manufacturing method thereof |
| CN102891240B (en) * | 2012-09-18 | 2015-07-08 | 惠州雷曼光电科技有限公司 | Light emitting diode (LED) with inverted structure and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071212 Termination date: 20110926 |