CN219759537U - Equipment for processing semiconductor or photovoltaic material - Google Patents

Equipment for processing semiconductor or photovoltaic material Download PDF

Info

Publication number
CN219759537U
CN219759537U CN202321151964.7U CN202321151964U CN219759537U CN 219759537 U CN219759537 U CN 219759537U CN 202321151964 U CN202321151964 U CN 202321151964U CN 219759537 U CN219759537 U CN 219759537U
Authority
CN
China
Prior art keywords
heating
cavity
wafer
processing
heat insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202321151964.7U
Other languages
Chinese (zh)
Inventor
孔凡昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Donghai County Aobo Quartz Products Co ltd
Original Assignee
Donghai County Aobo Quartz Products Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Donghai County Aobo Quartz Products Co ltd filed Critical Donghai County Aobo Quartz Products Co ltd
Priority to CN202321151964.7U priority Critical patent/CN219759537U/en
Application granted granted Critical
Publication of CN219759537U publication Critical patent/CN219759537U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The utility model discloses equipment for processing a semiconductor or photovoltaic material, which relates to the technical field of wafer heating and comprises a heating bin, a first cavity, a supporting rod and a transmission port, wherein a through hole is formed in the lower end of the heating bin, an airtight bearing is fixedly arranged in the through hole, the supporting rod is arranged in the airtight bearing in a penetrating mode, a heating disc is fixedly arranged at the upper end of the supporting rod, the heating disc axially rotates around the supporting rod along with rotation of the supporting rod, the first cavity is arranged in the heating bin, the transmission port is positioned on the heating bin and communicated with the first cavity, a cover plate is arranged on the transmission port, and an air pump is arranged on the heating bin in a penetrating mode. The utility model can uniformly heat the wafer in the vacuum environment, improves the heating efficiency of the wafer, and can monitor the temperature of the wafer in real time so as to ensure the finished product rate of wafer processing.

Description

Equipment for processing semiconductor or photovoltaic material
Technical Field
The utility model relates to the technical field of wafer heating, in particular to equipment for processing semiconductor or photovoltaic materials.
Background
With the development of technology and economy, semiconductors are widely used in many fields such as integrated circuits, consumer electronics, communication systems, photovoltaic power generation, illumination, and high-power converters, and in the semiconductor manufacturing process, a photolithography process is generally used to form a pattern on a wafer, after the photoresist is coated and exposed on the wafer, the photoresist needs to be baked after exposure, so as to improve the adhesion of the photoresist and promote the chemical reaction in the photoresist, and improve the protection capability of the photoresist on the wafer in an ion implantation or etching process, so that the heating treatment of the wafer is very important.
The existing equipment for processing semiconductor fire photovoltaic materials cannot be used for uniformly heating a wafer, so that the temperature between the center of the wafer and the edge of the wafer is uneven, the defects of the wafer are increased, the yield is poor, and the quality of the wafer or the photovoltaic materials is low.
The utility model provides equipment for processing semiconductor or photovoltaic materials, which is provided with the device for uniformly heating a wafer in a vacuum environment, so that the heating efficiency of the wafer is improved, the temperature of the wafer can be monitored in real time through a temperature sensor on a heating disc, and the yield of processing the wafer is improved.
Disclosure of Invention
The present utility model has been made in view of the above-mentioned problems with existing equipment for semiconductor or photovoltaic material processing.
Therefore, the utility model aims to provide equipment for processing a semiconductor or a photovoltaic material, which solves the problems that the existing equipment for processing the semiconductor or the photovoltaic material cannot effectively and uniformly heat a wafer and cannot effectively monitor the temperature during processing the wafer.
In order to achieve the above object, the present utility model provides the following technical solutions:
the utility model provides a device for semiconductor or photovoltaic material processing, includes heating storehouse, first cavity, bracing piece and transmission mouth, its characterized in that, the through-hole has been seted up to the heating storehouse lower extreme, and this through-hole internal fixation has airtight bearing, the bracing piece wear to establish with in the airtight bearing, bracing piece upper end fixed mounting has the heating dish, the heating dish follows the rotation of bracing piece and round the bracing piece carries out axial rotation, through rotating the bracing piece, and then makes the wafer of fixing on the heating dish rotatory, and through airtight bearing, can guarantee that the gas in the first cavity can not leak when the bracing piece rotates, has reduced thermal loss.
Preferably, the first cavity is arranged in the heating bin, the transmission port is positioned on the heating bin and is communicated with the first cavity, the transmission port is provided with a cover plate, the transmission port is used for inputting and outputting wafers, the cover plate is closed to enable a closed environment to be formed in the first cavity, and the vacuum environment is formed after air suction is facilitated.
Preferably, a heat insulation pad is arranged between the support rod and the heating plate, the top surface of the heat insulation pad is connected with the middle part of the lower end of the heating plate, the bottom surface of the heat insulation pad is connected with the top surface of the support rod, a groove is formed in the bottom of the heating plate, the heat insulation pad is embedded in the groove, the groove in the bottom of the heating plate is identical to the outer surface of the heat insulation pad, and on one hand, the positioning of the heat insulation pad and the connection stability of the heat insulation pad and the heating plate are facilitated through the groove, on the other hand, the structure is more compact, and the volume of the device is reduced.
Preferably, the ejector pin is installed in the surface grafting of heating plate, the even distribution of ejector pin is on the heating plate, the ejector pin is connected with the outside air pump of setting at the heating storehouse through the straw that passes the second cavity, be equipped with in the ejector pin and be used for absorbing vacuum adsorption hole, enable the firm absorption of wafer on the heating plate, the inside heater strip that coils of heating plate, the heater strip is resistance material, can effectually improve the temperature of heating plate.
Further, a temperature sensor is arranged in the middle of the heating disc in a penetrating mode, and the temperature sensor is electrically connected with a controller arranged outside the heating bin through a wire penetrating through the second cavity, so that the temperature of the wafer can be monitored in real time.
Preferably, the heating bin is installed in a penetrating mode, the head end of the air pump is located in the heating bin, the tail end of the air pump is located outside the heating bin and is connected with an air extraction pipe, and the air is conveniently extracted to enable the air cavity to form a vacuum environment.
In the technical scheme, the utility model has the technical effects and advantages that:
1. according to the utility model, the cover plate, the air pump and the airtight bearing are arranged, before the wafer is heated, the air is pumped by the air pump to form a vacuum state in the first cavity, so that the heat transfer efficiency in the first cavity is improved, and the support rod drives the heating disc to rotate at the axis, so that the wafer rotates on the heating disc, and the wafer is heated more uniformly.
2. According to the utility model, the heat insulation pad is arranged, so that cavity heat leakage caused by heat transfer of the support rod is reduced, the heating efficiency of the wafer is further improved, and the temperature of the wafer can be monitored in real time through the temperature sensor arranged on the heating disc.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments described in the present utility model, and other drawings may be obtained according to these drawings for a person having ordinary skill in the art.
FIG. 1 is a schematic elevational view of the present utility model;
FIG. 2 is a schematic elevation view of a partial structure of the present utility model;
fig. 3 is a top view of a never-forming structure of the present utility model.
Reference numerals illustrate:
1. a heating bin; 2. a first cavity; 3. a support rod; 4. a second cavity; 5. a heating plate; 6. a transmission port; 7. a cover plate; 8. an air extracting pump; 9. an airtight bearing; 10. a heating wire; 11. a thimble; 12. a temperature sensor; 13. and a heat insulation pad.
Detailed Description
In order to make the technical scheme of the present utility model better understood by those skilled in the art, the present utility model will be further described in detail with reference to the accompanying drawings.
The embodiment of the utility model discloses equipment for processing a semiconductor or photovoltaic material.
The utility model provides equipment for processing semiconductor or photovoltaic materials, which is shown in figures 1-3 and comprises a heating bin 1, a first cavity 2, a supporting rod 3 and a transmission port 6, and is characterized in that a through hole is formed in the lower end of the heating bin 1, an airtight bearing 9 is fixedly arranged in the through hole, the supporting rod 3 is arranged in the airtight bearing 9 in a penetrating mode, a heating disc 5 is fixedly arranged at the upper end of the supporting rod 3, and the heating disc 5 axially rotates around the supporting rod 3 along with rotation of the supporting rod 3.
Through the arm that the outer 1 portion of heating storehouse set up, send into first cavity 2 with the wafer from transmission mouth 6, and place on heating dish 5, thimble 11 on the heating dish 5 adsorbs the wafer on heating dish 5 through its inside vacuum adsorption hole, simultaneously, close apron 7, the gas of the inside through aspiration pump 8 extraction first cavity 2, make the inside vacuum environment that forms of first cavity 2, through rotating bracing piece 3, drive heating dish 5 and bracing piece 3 and carry out the axle center rotation, through the external control ware that has the electricity to be connected with temperature sensor 12, can be to its real time monitoring when the wafer adds, after the wafer heats, open apron 7, the outside arm of rethread takes out the wafer from in the first cavity 2.
In order to facilitate input and output of the wafer and air tightness of the first cavity 2, as shown in fig. 1, the first cavity 2 is arranged in the heating bin 1, the transmission port 6 is positioned on the heating bin 1, the transmission port 6 is communicated with the first cavity 2, and the transmission port 6 is provided with a cover plate 7.
In order to reduce the heat leakage of the cavity caused by the heat transfer of the support rod 3, as shown in 1-3, a heat insulation pad 13 is arranged between the support rod 3 and the heating plate 5, the top surface of the heat insulation pad 13 is connected with the middle part of the lower end of the heating plate 5, the bottom surface of the heat insulation pad 13 is connected with the top surface of the support rod 3, a groove is arranged at the bottom of the heating plate 5, the heat insulation pad 13 is embedded in the groove, the groove at the bottom of the heating plate 5 is identical with the outer surface of the heat insulation pad 13, the positioning of the heat insulation pad 13 is facilitated through the groove, the connection strength of the heat insulation pad 13 and the heating plate is improved, the device is more compact, the equipment volume is reduced, and the heat conductivity of the heat insulation pad 13 is smaller than that of the heating plate 5.
In order to firmly adsorb the wafer on the heating plate, as shown in fig. 1-3, the outer surface of the heating plate 5 is inserted and provided with the ejector pins 11, the ejector pins 11 are uniformly distributed on the heating plate 5, the ejector pins 11 are connected with the air pump arranged outside the heating bin 1 through the suction pipe penetrating through the second cavity 4, vacuum adsorption holes for adsorption are formed in the ejector pins 11, the heating plate 5 is internally coiled with the heating wire 10, the heating wire 10 is made of a resistance material, and the heating wire 10 can rapidly uniformly heat the heating plate 5, so that the wafer fixed on the heating plate 5 is uniformly heated.
In order to monitor the temperature of the wafer in real time, as shown in fig. 1-3, a temperature sensor 12 is arranged in the middle of the heating disc 5 in a penetrating way, and the temperature sensor 12 is electrically connected with a controller arranged outside the heating bin 1 through a wire penetrating through the second cavity 4.
In order to pump out the gas from the first cavity 2, as shown in fig. 1, the heating chamber 1 is installed with a suction pump 8 in a penetrating manner, the head end of the suction pump 8 is located in the heating chamber 1, the tail end of the suction pump 8 is located outside the heating chamber 1 and is connected with a suction pipe, and a vacuum environment can be formed in the first cavity through the suction pump 8.
While certain exemplary embodiments of the present utility model have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that modifications may be made to the described embodiments in various different ways without departing from the spirit and scope of the utility model. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive of the scope of the utility model, which is defined by the appended claims.

Claims (6)

1. The utility model provides a device for semiconductor or photovoltaic material processing, includes heating storehouse (1), first cavity (2), bracing piece (3) and transmission mouth (6), its characterized in that, the through-hole has been seted up to heating storehouse (1) lower extreme, and this through-hole internal fixation has airtight bearing (9), bracing piece (3) wear to establish with in airtight bearing (9), bracing piece (3) upper end fixed mounting has heating dish (5), heating dish (5) are followed the rotation of bracing piece (3) and are round bracing piece (3) carry out axial rotation.
2. An apparatus for the processing of semiconductor or photovoltaic materials according to claim 1, characterized in that said first cavity (2) is arranged in a heating chamber (1), said transfer port (6) is located on said heating chamber (1), and said transfer port (6) is in communication with said first cavity (2), and a cover plate (7) is arranged on said transfer port (6).
3. An apparatus for processing semiconductor or photovoltaic materials according to claim 2, characterized in that a heat insulation pad (13) is arranged between the support rod (3) and the heating plate (5), the top surface of the heat insulation pad (13) is connected with the middle part of the lower end of the heating plate (5), the bottom surface of the heat insulation pad (13) is connected with the top surface of the support rod (3), a groove is arranged at the bottom of the heating plate (5), the heat insulation pad (13) is inlaid in the groove, and the groove at the bottom of the heating plate (5) is identical with the outer surface of the heat insulation pad (13).
4. The device for processing semiconductors or photovoltaic materials according to claim 1, characterized in that ejector pins (11) are inserted and installed on the outer surface of the heating disc (5), the ejector pins (11) are uniformly distributed on the heating disc (5), the ejector pins (11) are connected with an air pump arranged outside the heating bin (1) through a suction pipe penetrating through the second cavity (4), vacuum adsorption holes for adsorption are formed in the ejector pins (11), heating wires (10) are coiled inside the heating disc (5), and the heating wires (10) are made of resistance materials.
5. An apparatus for the processing of semiconductor or photovoltaic materials according to claim 1, characterized in that the central position of the heating plate (5) is perforated with a temperature sensor (12), the temperature sensor (12) being electrically connected to a controller arranged outside the heating chamber (1) by means of wires passing through the second chamber (4).
6. The device for processing semiconductor or photovoltaic materials according to claim 1, characterized in that the heating bin (1) is provided with an air pump (8) in a penetrating way, the head end of the air pump (8) is positioned in the heating bin (1), and the tail end of the air pump (8) is positioned outside the heating bin (1) and is communicated with an air exhaust pipe.
CN202321151964.7U 2023-05-12 2023-05-12 Equipment for processing semiconductor or photovoltaic material Active CN219759537U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202321151964.7U CN219759537U (en) 2023-05-12 2023-05-12 Equipment for processing semiconductor or photovoltaic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202321151964.7U CN219759537U (en) 2023-05-12 2023-05-12 Equipment for processing semiconductor or photovoltaic material

Publications (1)

Publication Number Publication Date
CN219759537U true CN219759537U (en) 2023-09-26

Family

ID=88089464

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202321151964.7U Active CN219759537U (en) 2023-05-12 2023-05-12 Equipment for processing semiconductor or photovoltaic material

Country Status (1)

Country Link
CN (1) CN219759537U (en)

Similar Documents

Publication Publication Date Title
CN100545988C (en) Exhaustion bench for full-automatic glass vacuum system
CN206302077U (en) A kind of Moisture-proof switch cabinet
US20130228563A1 (en) Absorption device for rotatable heating
JP2015056448A (en) Substrate processing method and substrate processing apparatus
CN219759537U (en) Equipment for processing semiconductor or photovoltaic material
WO2020196506A1 (en) Substrate-processing device and substrate-processing method
CN102534551B (en) Semiconductor equipment
CN201731729U (en) Drying type constant temperature oven
WO2023116159A1 (en) Vacuum adsorption system and method
CN216773193U (en) Multifunctional heating table for semiconductor
CN108597987A (en) The cleaning method of semiconductor crystal wafer
KR20200086025A (en) Wafer processing chamber for wet clean equipment with temperature and humidity adjustable heater
JP5999625B2 (en) Substrate processing method
CN211842810U (en) Novel silane cross-linking device for polyethylene power cable
CN220931545U (en) Drying device of semiconductor cleaning equipment
CN110883017B (en) Method and device for statically cleaning graphene surface
CN207047292U (en) A kind of copper foil heated oven
CN106016977A (en) Drying device
CN216729964U (en) Reflow soldering process module structure
CN218321518U (en) Strong convection spheroidizing annealing furnace for metal processing
CN213680881U (en) Chemical vapor deposition apparatus
TWI816223B (en) Plasma generation apparatus, substrate processing apparatus using plasma generation apparatus, and plasma generation method
CN204522702U (en) A kind of air dry-set for finished acid storage
CN214319617U (en) Waste gas treatment device for all-hydrogen cover type annealing furnace
CN208846074U (en) A kind of highly-safe and good ultra-pure gases gas cylinder of evacuation effect dries evacuator

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant