CN219704853U - Composite clamp for processing semiconductor substrate - Google Patents

Composite clamp for processing semiconductor substrate Download PDF

Info

Publication number
CN219704853U
CN219704853U CN202322208440.3U CN202322208440U CN219704853U CN 219704853 U CN219704853 U CN 219704853U CN 202322208440 U CN202322208440 U CN 202322208440U CN 219704853 U CN219704853 U CN 219704853U
Authority
CN
China
Prior art keywords
plate
upper plate
semiconductor substrate
height adjusting
adjusting knob
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202322208440.3U
Other languages
Chinese (zh)
Inventor
高洁
练小正
胡萍
许照原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liaoyuan Semiconductor Co ltd
Original Assignee
Suzhou Liaoyuan Semiconductor Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Liaoyuan Semiconductor Co ltd filed Critical Suzhou Liaoyuan Semiconductor Co ltd
Priority to CN202322208440.3U priority Critical patent/CN219704853U/en
Application granted granted Critical
Publication of CN219704853U publication Critical patent/CN219704853U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

According to the composite clamp for processing the semiconductor substrate, disclosed by the utility model, the bonding agent on the surface of the carrying disc can be effectively scraped through the matching among the backing plate height adjusting knob, the upper plate, the lower plate, the grooves, the pair of backing plates and the connecting mechanism, so that the bonding agent is more uniformly distributed on the surface, the thickness deviation of the bonding agent is smaller, the wafer is tightly attached to the bonding agent by pressurizing the surface of the wafer, the total thickness deviation (TTV) of the wafer after being fixed is smaller than 3 mu m, the problem that the TTV is larger in the workpiece processing process is solved, and the surface quality of the workpiece after being processed is effectively ensured.

Description

Composite clamp for processing semiconductor substrate
Technical Field
The utility model discloses a composite clamp for processing a semiconductor substrate, and relates to the technical field of semiconductor processing.
Background
In the processing of semiconductor substrates, the requirements on the surface quality of the wafer are high, wherein TTV (Total thickness Variation), i.e. the Total thickness deviation in the wafer, directly influences the subsequent packaging process and the final quality of the chip. As shown in fig. 1, in the prior art, when a wafer 11 is thinned, the wafer 11 to be thinned is adhered to a carrying tray 13 by using an adhesive 12, and grinding, polishing, cleaning and other processes are performed after the thinning. Factors affecting wafer TTV after thinning are: the precision of the thinning equipment, the flatness of the carrying tray 13 and the uniformity of the adhesive application. However, with the continuous improvement of the precision of semiconductor processing equipment, the precision of thinning equipment and the flatness of a carrier plate have been greatly improved, and the main factor affecting the TTV after wafer thinning is that the thickness of the adhesive is uneven, resulting in TTV of the wafer exceeding 10 μm and poor surface quality.
Disclosure of Invention
Based on the problems in the prior art, the utility model provides a composite clamp for processing a semiconductor substrate, which aims to solve the problem of larger TTV caused by uneven thickness of an adhesive.
The utility model provides a compound clamp for processing a semiconductor substrate, which comprises a backing plate height adjusting knob 21, a pressure display screen 22, an upper plate height adjusting knob 23, an upper plate 24, a lower plate 25, a groove 26, a pair of backing plates 27, an upper slide rail 28, a lower slide rail 29 and a connecting mechanism 210; the upper plate 24 and the lower plate 25 are connected by a connecting mechanism 210, the pad height adjusting knob 21 and the upper plate height adjusting knob 23 are fixed to the upper plate 24, the pad 27 is capable of retracting the groove 26, and the pair of pads 27 are connected to the pad height adjusting knob 21 for the upper plate.
Preferably, the upper and lower plates are each less than 2 μm in flatness.
Preferably, the connection mechanism 210 includes a lifting rod 41 and a pulley 42.
Preferably, the composite jig for semiconductor substrate processing further includes a carrier plate 31, and the carrier plate 31 is fixed to the lower plate 25 with four nuts 32.
Preferably, the pad 27 is retractable from the recess 26 by rotating the pad height adjustment knob 21.
Preferably, the upper plate 24 is capable of sliding in parallel with respect to the lower plate 25.
Preferably, the thickness of the backing plate 27 is equal to the depth of the groove 26.
Preferably, the upper plate 24 and the connection mechanism 210 are detachably connected with the lower plate 25.
The utility model has the beneficial effects that: the composite clamp provided by the utility model can be used for effectively scraping the adhesive on the surface of the carrier disc, so that the adhesive surface is more uniformly distributed, and the thickness deviation of the adhesive is smaller; and the wafer surface is pressed to enable the wafer to be closely attached to the adhesive, and after the wafer is processed, the TTV of the wafer is smaller than 3 mu m, so that the surface quality of the wafer is greatly improved.
Drawings
FIG. 1 is a schematic illustration of a prior art wafer bonding to a carrier plate;
FIG. 2 is a schematic view of a composite clamp for semiconductor substrate processing provided by the present utility model;
FIG. 3 is a schematic view of a carrier plate fixed to a lower plate according to an embodiment of the present utility model;
FIG. 4 is a schematic view of a connection mechanism according to an embodiment of the present utility model.
In the figure: 11-wafer; 12-a binder; 13-carrying tray; 21-a backing plate height adjustment knob; 22-a pressure display screen; 23-upper plate height adjustment knob; 24-upper plate; 25-lower plate; 26-groove; 27-backing plate; 28-upper slide rail; 29-lower slide rail; 210-a connection mechanism; 31-carrying disc; 32-nuts; 41-lifting rod; 42-pulleys.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the utility model.
The utility model provides a compound clamp for processing a semiconductor substrate, which comprises a backing plate height adjusting knob 21, a pressure display screen 22, an upper plate height adjusting knob 23, an upper plate 24, a lower plate 25, a groove 26, a pair of backing plates 27, an upper slide rail 28, a lower slide rail 29 and a connecting mechanism 210; the upper plate 24 and the lower plate 25 are connected by a connecting mechanism 210, the pad height adjusting knob 21 and the upper plate height adjusting knob 23 are fixed to the upper plate 24, the pad 27 is capable of retracting the groove 26, and the pair of pads 27 are connected to the pad height adjusting knob 21 for the upper plate.
In a specific embodiment, the upper and lower plates each have a flatness of less than 2 μm.
In a specific embodiment, the connection mechanism 210 includes a lifter 41 and a pulley 42.
In a specific embodiment, the composite jig for semiconductor substrate processing further includes a carrier plate 31, and the carrier plate 31 is fixed to the lower plate 25 with four nuts 32.
In a specific embodiment, the pad 27 is retractable from the recess 26 by rotating the pad height adjustment knob 21.
In a particular embodiment, the upper plate 24 is capable of sliding in parallel with respect to the lower plate 25.
In a particular embodiment, the thickness of the backing plate 27 is equal to the depth of the groove 26.
In a specific embodiment, the upper plate 24 and the connection mechanism 210 are detachably connected to the lower plate 25.
In use, as shown in fig. 3, the carrier plate 31 is fixed to the lower plate 25 with four nuts 32; placing the lower plate 25 on a heating furnace, heating the lower plate 25 and the carrying disc 31, and coating a layer of adhesive with an area slightly larger than the area of the wafer on the lower plate 25 according to the shape of the wafer to be processed; the upper plate 24 and the connection mechanism 210 are installed, and as shown in fig. 4, the connection mechanism 210 includes a lifting rod 41 and a pulley 42; rotating the upper plate height adjustment knob 23 to lower the upper plate 24 to a distance slightly greater than the adhesive thickness from the lower plate 25; manually sliding the upper plate 24 horizontally, driving the upper plate 24 to slide to one side of the lower plate 25 by the pulley 42, rotating the upper plate height adjusting knob 23, lowering the upper plate 24 to a distance slightly smaller than the thickness of the adhesive from the lower plate 25, rotating the backing plate height adjusting knob 21, lowering the backing plate 27 from the groove 26, stopping when the backing plate 27 is lowered to contact the lower plate 25, wherein the backing plates 27 are positioned at two sides of the adhesive and have a spacing larger than the wafer size; then, the upper plate 24 is slowly slid horizontally in the opposite direction to the previous one, and the adhesive on the lower plate 25 is scraped off by the sliding of the upper plate 24 at this time, so that the adhesive thickness distribution is uniform; repeating the scraping action for two to three times until the surface of the adhesive is flat; the upper plate 24 is lifted by rotating the upper plate height adjusting knob 23, the upper plate 24 and the connection mechanism 210 are removed, the upper plate 24 is wiped with warm absolute ethyl alcohol soaked with nonwoven fabric, and the adhesive on the upper plate 24 is removed.
Slowly placing a wafer in the center of an adhesive, closing a heating furnace, paving a layer of non-woven fabric on the wafer, connecting an upper plate 24 and a connecting mechanism 210 with a lower plate 25, rotating a backing plate height adjusting knob 21, retracting a backing plate 27 into a groove 26, presetting corresponding pressure values according to bearing capacities of different materials, rotating an upper plate height adjusting knob 23 to enable the upper plate 24 to descend, stopping descending when the preset values are reached, setting corresponding pressurizing time according to cooling time of different adhesives, cooling and solidifying the adhesive after the pressurizing time is reached, lifting the upper plate 24, wiping the upper plate 24 by using absolute ethyl alcohol which is soaked by the non-woven fabric and warm, and removing the adhesive on the upper plate 24; the nut between the download tray 31 and the lower plate 25 is unscrewed, and the download tray 31 is taken out for the next processing.
Although the preferred embodiments of the present utility model have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, and accordingly the scope of the utility model is not limited to the embodiments described above.

Claims (8)

1. A compound fixture for semiconductor substrate processing, characterized in that: the device comprises a backing plate height adjusting knob (21), a pressure display screen (22), an upper plate height adjusting knob (23), an upper plate (24), a lower plate (25), a groove (26), a pair of backing plates (27), an upper sliding rail (28), a lower sliding rail (29) and a connecting mechanism (210); the upper plate (24) and the lower plate (25) are connected through a connecting mechanism (210), the base plate height adjusting knob (21) and the upper plate height adjusting knob (23) are fixed on the upper plate (24), the base plate (27) can retract the groove (26), and the pair of base plates (27) are connected with the base plate height adjusting knob (21) for the upper plate.
2. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the flatness of the upper plate (24) and the lower plate (25) is less than 2 mu m.
3. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the connecting mechanism (210) comprises a lifting rod (41) and a pulley (42).
4. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the composite clamp for processing the semiconductor substrate further comprises a carrier disc (31), and the carrier disc (31) is fixed on the lower plate (25) through four nuts (32).
5. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: and the backing plate (27) can stretch out and draw back from the groove (26) by rotating the backing plate height adjusting knob (21).
6. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the upper plate (24) is slidable in parallel with respect to the lower plate (25).
7. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the thickness of the backing plate (27) is equal to the depth of the groove (26).
8. A composite clamp for semiconductor substrate processing as recited in claim 1, wherein: the upper plate (24) and the connecting mechanism (210) are detachably connected with the lower plate (25).
CN202322208440.3U 2023-08-17 2023-08-17 Composite clamp for processing semiconductor substrate Active CN219704853U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202322208440.3U CN219704853U (en) 2023-08-17 2023-08-17 Composite clamp for processing semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202322208440.3U CN219704853U (en) 2023-08-17 2023-08-17 Composite clamp for processing semiconductor substrate

Publications (1)

Publication Number Publication Date
CN219704853U true CN219704853U (en) 2023-09-19

Family

ID=87976356

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202322208440.3U Active CN219704853U (en) 2023-08-17 2023-08-17 Composite clamp for processing semiconductor substrate

Country Status (1)

Country Link
CN (1) CN219704853U (en)

Similar Documents

Publication Publication Date Title
CN104769704A (en) Method for processing semiconductor wafer
CN204621771U (en) Full-automatic chip mounter
CN103009222A (en) Wax-free polishing process of heavily-doped polished silicon wafer with high local flatness
CN115302344A (en) Grinding method of small-size soft and brittle crystal material wafer
CN219704853U (en) Composite clamp for processing semiconductor substrate
US6402594B1 (en) Polishing method for wafer and holding plate
CN110625460A (en) Planarization process method for wafer-level heterostructure
CN111168553B (en) Sapphire substrate stabilizing device
CN114932500B (en) Grinding and polishing integrated device and operation method thereof
JP2012015181A (en) Semiconductor substrate manufacturing method
CN114750018A (en) Chip layer removing device and method
JP4793680B2 (en) Semiconductor wafer polishing method
CN111185858B (en) Method for processing high-precision superhard abrasive material integral cutting grinding wheel
TW201343326A (en) Conditioner disk used in chemical mechanical polishing process and method for making the same
CN209335381U (en) A kind of bonding device for realizing accurate bonding between silicon wafer
CN113681456A (en) Method for solving local high point generation after chemical mechanical polishing of silicon carbide wafer, ceramic disc and chemical mechanical polishing device
CN216802999U (en) Ceramic disc for wafer polishing and polishing device
CN214519543U (en) Single-chip wafer bearing base for polishing
CN210467774U (en) Wax pressing device for improving thickness uniformity of thinned wafer
CN103240219A (en) Waxing method of germanium substrate slice of solar battery
KR20030064826A (en) Arrangement and method for mounting a backing film to a polish head
CN103692337A (en) Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers
KR20160057585A (en) Device for bonding wafer of wafer flattening apparatus and method for flattening wafer
TWI556910B (en) Composite polishing pad and method for making the same
TWI812936B (en) Polishing pad and polishing method

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant