CN219656765U - Semiconductor target detection device - Google Patents
Semiconductor target detection device Download PDFInfo
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- CN219656765U CN219656765U CN202320690032.3U CN202320690032U CN219656765U CN 219656765 U CN219656765 U CN 219656765U CN 202320690032 U CN202320690032 U CN 202320690032U CN 219656765 U CN219656765 U CN 219656765U
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- semiconductor target
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- 238000001514 detection method Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 229910001220 stainless steel Inorganic materials 0.000 claims description 14
- 239000010935 stainless steel Substances 0.000 claims description 14
- 238000007689 inspection Methods 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000012360 testing method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model relates to the technical field of dies, in particular to a semiconductor target detection device. The semiconductor target detection device comprises a first detection tool and a second detection tool, wherein the first detection tool and the second detection tool are columnar bodies, protruding strips are arranged at intervals at the bottoms of the side edges of the first detection tool and the second detection tool, the diameter of the first detection tool is smaller than that of a product to be detected, and the diameter of the second detection tool is larger than that of the product to be detected. When the device is used for detecting the semiconductor target, the second detecting tool is used for detecting the inner diameter of the product to be detected, and if the second detecting tool cannot be inserted into the product to be detected, but can be put into the first detecting tool for testing, the product to be detected is judged to be qualified, so that whether the size of the product to be detected meets the specified standard can be effectively detected. By using the device to detect the semiconductor target, whether the product to be detected is qualified or not can be rapidly and accurately judged, and the detection accuracy and the production efficiency are effectively improved.
Description
Technical Field
The utility model relates to the technical field of dies, in particular to a semiconductor target detection device.
Background
The semiconductor target (Semiconductor Target) is a base material for preparing a semiconductor thin film. In the process of film preparation, a semiconductor target is generally placed in a vacuum chamber by using Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD) techniques, and bombarded by laser or electron beam methods, so as to detach atoms or molecules on the target surface and form a film on a substrate.
The semiconductor target is typically a high purity monocrystalline or polycrystalline material, such as silicon, gallium, copper indium gallium selenide, and the like. The preparation of the target material requires the characteristics of high purity, good crystal structure, high uniformity and the like of the material, because the factors directly influence the quality and performance of the film. Thus, the preparation and characterization technology of semiconductor targets is also one of the important components of the semiconductor industry. In the prior art, the local position space of the product is too narrow, so that the conventional size detection tool cannot measure.
Therefore, a semiconductor target detection device is needed to solve the above-mentioned problems.
Disclosure of Invention
The utility model aims to provide a semiconductor target detection device, which can reduce labor intensity and solve the problem that a common detection tool cannot detect a semiconductor target.
To achieve the purpose, the utility model adopts the following scheme:
the semiconductor target detection device comprises a first detection tool and a second detection tool, wherein the first detection tool and the second detection tool are columnar bodies, protruding strips are arranged at intervals at the bottoms of the side edges of the first detection tool and the second detection tool, the diameter of the first detection tool is smaller than that of a product to be detected, and the diameter of the second detection tool is larger than that of the product to be detected.
Illustratively, the top surfaces of the first gauge and the second gauge are both provided with handles.
Illustratively, the first gauge is a stainless steel gauge.
Illustratively, the second gauge is a stainless steel gauge.
The first gauge is illustratively a heat-treated gauge.
The second gauge is illustratively a heat-treated gauge.
Illustratively, the surface of the first gauge is a polished surface.
Illustratively, the surface of the second gauge is a polished surface.
The protruding strips of the first gauge and the second gauge are uniformly distributed at intervals.
Illustratively, the first gauge has a diameter of 99.9mm and the second gauge has a diameter of 100.1mm.
The beneficial effects of the utility model are as follows:
in the semiconductor target detection device provided by the utility model, when the device is used for detecting the semiconductor target, the second detection tool is used for detecting the inner diameter of the product to be detected, and if the second detection tool cannot be inserted into the product to be detected, but can be put into the first detection tool for testing, the product to be detected is judged to be qualified, so that whether the size of the product to be detected meets the specified standard can be effectively detected. By using the device to detect the semiconductor target, whether the product to be detected is qualified or not can be rapidly and accurately judged, and the detection accuracy and the production efficiency are effectively improved.
Drawings
FIG. 1 is a schematic structural diagram of a first gauge provided by the present utility model;
fig. 2 is a schematic structural diagram of a second gauge provided by the present utility model.
In the figure:
100. a first gauge; 200. a second gauge; 300. protruding strips.
Detailed Description
The technical scheme of the utility model is further described below by the specific embodiments with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the drawings related to the present utility model are shown.
In the present utility model, directional terms, such as "upper", "lower", "left", "right", "inner" and "outer", are used for convenience of understanding and are not to be construed as limiting the scope of the present utility model unless otherwise specified.
In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present utility model, unless explicitly stated and limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
As shown in fig. 1-2, the semiconductor target detecting device includes a first detecting tool 100 and a second detecting tool 200, where the first detecting tool 100 and the second detecting tool 200 are both cylindrical, and protruding strips 300 are disposed at intervals at the bottoms of the side edges of the first detecting tool 100 and the second detecting tool 200, and the diameter of the first detecting tool 100 is smaller than that of the product to be detected, and the diameter of the second detecting tool 200 is larger than that of the product to be detected. The product to be measured is a semiconductor target, the shape of the semiconductor target is a concave cylinder, blocking parts are arranged at intervals at the bottom of the inner side edge of the semiconductor target, and the inner diameter of the semiconductor target needs to be measured by bypassing the blocking parts. Since the protruding bars 300 are disposed at intervals, the first gauge 100 and the second gauge 200 can be aligned with the gap between the stoppers to insert the protruding bars 300, and the inner diameter can be measured by rotating the protruding bars after insertion. When the device is used for detecting the semiconductor target, the second detecting tool 200 is used for detecting the inner diameter of the product to be detected, and if the second detecting tool 200 can not be inserted into the product to be detected, but can be put into the first detecting tool 100 for testing, the product to be detected is judged to be qualified, so that whether the size of the product to be detected meets the specified standard can be effectively detected. By using the device to detect the semiconductor target, whether the product to be detected is qualified or not can be rapidly and accurately judged, and the detection accuracy and the production efficiency are effectively improved.
The top surfaces of the first gauge 100 and the second gauge 200 are provided with handles. The design that so set up can be through increasing the handle makes things convenient for user's operation and improves detection efficiency. The top surfaces of the first checking fixture 100 and the second checking fixture 200 are respectively provided with a handle, so that a user can more conveniently pick up the checking fixture to perform detection operation, thereby reducing labor intensity and operation difficulty. In addition, the design of handle also can make the operation more stable and accurate, helps improving accuracy and the efficiency that detects. Therefore, the device not only can improve the detection accuracy and the production efficiency, but also can reduce the operation difficulty and the fatigue degree of the user, and has high practicability and economic value.
Further, the first gauge 100 in this embodiment is a stainless steel gauge. The stainless steel material is used as the material of the first gauge 100, has the advantages of corrosion resistance, high temperature resistance, high mechanical strength and the like, and is suitable for use in high-temperature, high-pressure and high-precision production environments. In the semiconductor manufacturing process, the stainless steel gauge needs to be cleaned and processed for many times, so that the stainless steel gauge has good corrosion resistance, can maintain stability and precision for a long time in such an environment, and can bear complex process conditions such as high temperature and high pressure. In addition, the gauge made of the stainless steel material can also effectively avoid the influence of material pollution on the quality of semiconductor products. Therefore, the semiconductor target detection device has higher stability and precision, can improve the detection accuracy and efficiency, and is more suitable for use in complex environments such as high temperature, high pressure, high precision and the like in the semiconductor production process.
Further, the second gauge 200 in this embodiment is a stainless steel gauge. The stainless steel material is used as the material of the second gauge 200, has the advantages of corrosion resistance, high temperature resistance, high mechanical strength and the like, and is suitable for being used in high-temperature, high-pressure and high-precision production environments. In the semiconductor manufacturing process, the stainless steel gauge needs to be cleaned and processed for many times, so that the stainless steel gauge has good corrosion resistance, can maintain stability and precision for a long time in such an environment, and can bear complex process conditions such as high temperature and high pressure. In addition, the gauge made of the stainless steel material can also effectively avoid the influence of material pollution on the quality of semiconductor products. Therefore, the semiconductor target detection device has higher stability and precision, can improve the detection accuracy and efficiency, and is more suitable for use in complex environments such as high temperature, high pressure, high precision and the like in the semiconductor production process.
Further, the first gauge 100 in the present embodiment is a heat-treated gauge. The heat-treated first gauge 100 has higher hardness and wear resistance, can withstand longer use in the semiconductor manufacturing process, and can more accurately detect the size and shape of the semiconductor target. The heat treatment can change the structure and the performance of the metal material through the heating and cooling processes, so that the metal material has better mechanical performance and wear resistance. By heat-treating the first gauge 100, the surface hardness thereof can be increased, thereby improving the wear resistance thereof and making it more durable. In addition, the heat-treated gauge also has better corrosion resistance, can resist corrosion of various acid-base environments, and keeps stability and precision. Therefore, the semiconductor target detection device can more accurately detect the size and the shape of the semiconductor target, improves the detection efficiency and the detection accuracy, and is more suitable for use in the complex environment in the semiconductor production process.
Further, the second gauge 200 in this embodiment is a heat-treated gauge. The heat-treated second gauge 200 has higher hardness and wear resistance, can withstand longer use in the semiconductor manufacturing process, and can more accurately detect the size and shape of the semiconductor target. The heat treatment can change the structure and the performance of the metal material through the heating and cooling processes, so that the metal material has better mechanical performance and wear resistance. By heat-treating the second gauge 200, the surface hardness thereof can be increased, thereby improving the wear resistance thereof and making it more durable. In addition, the heat-treated gauge also has better corrosion resistance, can resist corrosion of various acid-base environments, and keeps stability and precision. Therefore, the semiconductor target detection device can more accurately detect the size and the shape of the semiconductor target, improves the detection efficiency and the detection accuracy, and is more suitable for use in the complex environment in the semiconductor production process.
Further, the surface of the first gauge 100 in this embodiment is a polished surface. The surface of the first gauge 100 may be polished to make the surface smoother, thereby reducing errors and uncertainty due to surface roughness. This will help to improve detection accuracy and accuracy, further guarantee the quality and the stability of semiconductor target.
Further, the surface of the second gauge 200 in this embodiment is a polished surface. The surface of the second gauge 200 may be polished to make the surface smoother, thereby reducing errors and uncertainty due to surface roughness. This will help to improve detection accuracy and accuracy, further guarantee the quality and the stability of semiconductor target.
Further, the protruding strips 300 of the first gauge 100 and the second gauge 200 in this embodiment are uniformly spaced apart. The protruding strips 300 of the first gauge 100 and the second gauge 200 are uniformly distributed at intervals, so that the wider detected parts can be covered, and the coverage rate and the reliability of detection are improved. Meanwhile, the design of uniform interval distribution can also ensure uniform intervals among the detection tools, avoid errors and uncertainties caused by too small or too large intervals, and improve the accuracy and precision of detection.
Further, the diameter of the first gauge 100 in this embodiment is 99.9mm, and the diameter of the second gauge 200 is 100.1mm. Because the diameter of the first gauge 100 is 99.9mm, and the diameter of the second gauge 200 is 100.1mm, the detecting device can accurately measure the product to be detected with the diameter of 100mm, and the problem that the traditional detecting tool cannot measure the local size is avoided.
It is to be understood that the above-described embodiments of the present utility model are provided by way of illustration only and not limitation of the embodiments thereof. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the utility model are desired to be protected by the following claims.
Claims (10)
1. The semiconductor target detection device is characterized by comprising a first detection tool (100) and a second detection tool (200), wherein the first detection tool (100) and the second detection tool (200) are columnar bodies, protruding strips (300) are arranged at intervals at the bottoms of the side edges of the first detection tool (100) and the second detection tool (200), the diameter of the first detection tool (100) is smaller than that of a product to be detected, and the diameter of the second detection tool (200) is larger than that of the product to be detected.
2. The semiconductor target detection device according to claim 1, wherein the top surfaces of the first gauge (100) and the second gauge (200) are both provided with handles.
3. The semiconductor target detection apparatus according to claim 1, wherein the first gauge (100) is a stainless steel gauge.
4. The semiconductor target detection apparatus according to claim 1, wherein the second gauge (200) is a stainless steel gauge.
5. The semiconductor target inspection apparatus according to claim 1, wherein the first inspection tool (100) is a heat-treated inspection tool.
6. The semiconductor target inspection apparatus according to claim 1, wherein the second inspection tool (200) is a heat-treated inspection tool.
7. The semiconductor target inspection apparatus according to claim 1, wherein the surface of the first inspection tool (100) is a polished surface.
8. The semiconductor target inspection apparatus according to claim 1, wherein the surface of the second inspection tool (200) is a polished surface.
9. The semiconductor target inspection device according to any one of claims 1-8, wherein the protruding strips (300) of the first inspection tool (100) and the second inspection tool (200) are uniformly spaced apart.
10. The semiconductor target detection apparatus according to claim 9, wherein the diameter of the first gauge (100) is 99.9mm, and the diameter of the second gauge (200) is 100.1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320690032.3U CN219656765U (en) | 2023-03-31 | 2023-03-31 | Semiconductor target detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320690032.3U CN219656765U (en) | 2023-03-31 | 2023-03-31 | Semiconductor target detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219656765U true CN219656765U (en) | 2023-09-08 |
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ID=87858446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320690032.3U Active CN219656765U (en) | 2023-03-31 | 2023-03-31 | Semiconductor target detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219656765U (en) |
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2023
- 2023-03-31 CN CN202320690032.3U patent/CN219656765U/en active Active
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