CN219637327U - Sputtering chamber - Google Patents

Abstract

The present application proposes a sputtering chamber, comprising: a chamber having an inner wall; a target disposed at one end of the chamber; a bias magnetic field device disposed along the inner wall in the chamber; a metal plate A shape component, covering the inner wall; a mask component, thicker than the metal plate component, arranged between the bias magnetic field device and the target, and configured to reduce the impact of the magnetic field of the bias magnetic field device on The effect of the target. In this application, by setting a mask assembly located between the bias magnetic field device and the target in the cavity, the mask assembly can be used to reduce the influence of the magnetic field of the bias magnetic field device on the target, which is equivalent to improving the magnet on the outside of the back plate. The influence of the magnetic field of the component on the surface of the target, by making the influence of the magnetic field of the magnet assembly outside the back plate on the surface of the target greater than the influence of the bias magnetic field device on the surface of the target, the voltage of the target can be stabilized and the voltage of the target surface can be improved. The uniformity of the slurry distribution, thereby improving the uniformity of the coating.

Description

Sputtering chamber

technical field

The present application relates to the technical field of semiconductor packaging, in particular to a sputtering chamber.

Background technique

The sputtering (Sputtering) process is a kind of PVD (Physical Vapor Deposition, Physical Vapor Deposition) process of semiconductor packaging technology, which needs to be applied to a sputtering machine for execution.

Referring to FIG. 1 , FIG. 1 is a schematic longitudinal cross-sectional view of a sputtering chamber of a conventional sputtering machine. As shown in Figure 1, the sputtering cavity of sputtering machine platform comprises cavity 10, and one end of cavity 10 is provided with target material 11, and target material 11 can be fixed on the inner side (front) of back plate 12, and the back plate 12 The outside (back) can be provided with a magnet assembly 13, the other end of the cavity 10 is provided with a base 15 for placing the object to be sputtered, a bias magnet 14 can be provided in the cavity 10, and the bias magnet 14 is arranged along the cavity 10. inner wall setting.

The magnetic field on the surface of the target 11 is mainly affected by the magnet assembly 13 behind the back plate 12. This magnetic field distribution will affect the plasma distribution (i.e. plasma density) of the plasma (i.e. plasma) generated by ion bombardment on the surface of the target 11, The plasma distribution on the surface of the target 11 is made more uniform. In the sputtering (Sputter) step, the usable time of the target 11 is related to the thickness of the target 11. When the thickness is thicker, the usable time of the target 11 is longer, and the frequency of replacing the target 11 can be extended. , reduce downtime and increase production.

However, when the thickness of the target material 11 increases, for example, from 3mm to 6mm, there will be a problem of poor uniformity of the coating film. This problem mainly comes from the change of the thickness of the target 11 on the surface of the target 11 bombarded by ions, so that the surface of the target 11 is far away from the magnet assembly 13 behind the back plate 12, and is closer to the bias magnet 14 in the cavity 10, so that the bias The influence of the magnetic field of the magnet 14 on the magnetic field on the surface of the target 11 increases, thereby affecting the distribution of plasma ions, resulting in a decrease in the uniformity of the plasma distribution on the surface of the target 11 .

During the sputtering process, the fluctuation amplitude of the target voltage (that is, the voltage on the surface of the target 11 ) can be monitored to preliminarily judge the uniformity of the plasma distribution on the surface of the target 11 . When the target thickness is 3mm, the fluctuation range of the target voltage is generally within 100V. Referring to FIG. 2 , it shows a schematic diagram of the target voltage when the thickness of the target 11 is increased to 6mm. It can be seen that the target voltage (that is, the voltage on the surface of the target 11) will fluctuate between about 560V and 1000V. The amplitude reaches 440V. This means that when the thickness of the target material 11 increases to 6mm, the uniformity of the plasma distribution on the surface of the target material 11 is seriously reduced, which will lead to the problem of poor uniformity of the coating film.

Utility model content

The purpose of this application is to propose a sputtering chamber suitable for a sputtering machine to solve the technical problem that the bias magnetic field in the sputtering chamber has too much influence on the magnetic field on the surface of the target.

In order to achieve the above purpose, the present application provides the following technical solutions: a sputtering chamber, comprising: a chamber having an inner wall; a target disposed at one end of the chamber; a bias magnetic field device disposed along the set along the inner wall; a metal plate-shaped component, covering the inner wall; a mask component, thicker than the metal plate-shaped component, arranged between the bias magnetic field device and the target, configured to reduce the The influence of the magnetic field of the bias magnetic field device on the target.

In some optional implementation manners, the mask assembly is mainly formed by stacking a plurality of sheet-shaped mask parts in a vertical direction.

In some optional implementation manners, the mask assembly is mainly formed by combining a plurality of block-shaped mask parts in the horizontal direction.

In some optional embodiments, the material of the mask component is stainless steel or ceramics, or the surface of the mask component is coated with stainless steel or ceramics, or the material of the mask component is stainless steel and the surface has been coated. Finish anodizing.

In some optional implementation manners, the metal plate component further covers the bias magnetic field device, and the shield component is separated from the bias magnetic field device by the metal plate component.

In some optional implementation manners, another metal plate component is covered above the mask component.

In some optional implementation manners, the shield component is disposed between the metal plate component and the bias magnetic field device.

In some optional embodiments, the target is attached to a thinned back plate, and the thickness of the back plate is not greater than 20 mm.

In some optional embodiments, the target is attached to a backing plate, and the sputtering chamber further includes a magnet assembly disposed outside the backing plate.

In some optional embodiments, the sputtering chamber further includes: a base, disposed at the other end of the chamber relative to the target, for carrying objects to be sputtered; a metal ring assembly , covering the gap between the base and the bias magnetic field device.

In order to solve the technical problem that the bias magnetic field in the sputtering chamber has too much influence on the magnetic field on the surface of the target, which in turn affects the plasma distribution and reduces the uniformity of the coating film, this application proposes a sputtering chamber suitable for sputtering machines body. In this application, by setting a mask assembly located between the bias magnetic field device and the target in the cavity, the mask assembly can be used to reduce the influence of the magnetic field of the bias magnetic field device on the target, which is equivalent to improving the magnet on the outside of the back plate. The influence of the magnetic field of the component on the surface of the target, by making the influence of the magnetic field of the magnet assembly outside the back plate on the surface of the target greater than the influence of the bias magnetic field device on the surface of the target, the voltage of the target can be stabilized and the voltage of the target surface can be improved. The uniformity of the slurry distribution, thereby improving the uniformity of the coating.

In a further embodiment, the target can be attached to a thinned backboard with a thickness not greater than 20 mm. By thinning the backboard, the distance between the target surface can be reduced, and the magnet assembly outside the backboard can be enlarged. The influence of the magnetic field on the surface of the target, stabilize the voltage of the target, and further improve the uniformity of the plasma distribution on the surface of the target, thereby further improving the uniformity of the coating.

Description of drawings

Other characteristics, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

Fig. 1 is a schematic diagram of a vertical cross-sectional structure of a sputtering chamber currently available;

Fig. 2 is a schematic diagram of the target voltage of a current sputtering chamber during operation;

Fig. 3 is a schematic diagram of a longitudinal cross-sectional structure of an embodiment 3a of a sputtering chamber according to the present application;

4 is a schematic diagram of a longitudinal cross-sectional structure of a mask assembly according to an embodiment of the present application;

FIG. 5 is a schematic top view of a mask assembly according to an embodiment of the present application;

Fig. 6 is a comparative schematic diagram of an embodiment of the sputtering chamber of the present application and an existing sputtering chamber;

Fig. 7 is a schematic diagram of the target voltage during the working process of the sputtering chamber according to the present application;

Fig. 8 is a schematic longitudinal cross-sectional structure diagram of an embodiment 8a of a sputtering chamber according to the present application;

Fig. 9 is a schematic longitudinal cross-sectional view of an embodiment 9a of a sputtering chamber according to the present application.

Explanation of reference signs/symbols:

10-cavity; 11-target; 12-back plate; 13-magnet assembly; 14-bias magnetic field device; 15-base; 20-cavity; 21-inner wall; 22-target; 23-bias Magnetic field device; 24-metal plate component; 25-cover component; 251-sheet cover; 252-block cover; 26-backboard; 27-magnet component; 28-base; 29-metal ring assembly; 30-bracket.

Detailed ways

The specific implementation of the present application will be described below in conjunction with the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by the present application and the technical effects produced through the contents recorded in this specification. It can be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the inventions. In addition, for the convenience of description, only the parts related to the related inventions are shown in the drawings.

It should be readily understood that the meanings of "on", "over" and "on" in this application should be interpreted in the broadest possible manner such that "on" Not only does it mean "directly on something", but it also means "on something" including an intermediate component or layer that exists between the two.

In addition, for the convenience of description, spatial relative terms such as "below", "below", "lower", "above", "upper" and other spatially relative terms may be used herein to describe The relationship of one element or component to another element or component shown in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90° or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

As used herein, the terms "substantially", "substantial", "about" and "approximately" are used to indicate and explain minor variations. For example, when used in conjunction with numerical values, the above terms may refer to a variation range of less than or equal to ±10% of the corresponding numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to Range of variation equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another example, the thickness of the film or layer is "substantially uniform"

Can refer to the average thickness of a film or layer with a standard deviation of less than or equal to ±10%, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to Standard deviation of ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term "substantially coplanar" may refer to two surfaces that are within 50 μm along the same plane, such as within 40 μm, within 30 μm, within 20 μm, within 10 μm, or within 1 μm along the same plane. Two components may be considered "substantially aligned" if, for example, they overlap or overlap within 200 μm, within 150 μm, within 100 μm, within 50 μm, within 40 μm, within 30 μm, within 20 μm, within 10 μm, or within 1 μm. If the angle between two surfaces or components is, for example, 90°±10° (such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1° or ±0.05° ), the two surfaces or components are considered to be "substantially perpendicular". When used in connection with an event or circumstance, the terms "substantially," "substantial," "about," and "about" can refer to exactly how closely the event or circumstance occurs as well as to how closely the event or circumstance occurs.

It should be noted that the structures, proportions, sizes, etc. shown in the drawings of the specification are only used to match the content recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the implementation of this application. Limiting conditions, so it has no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of this application, should still fall within the scope of this application. The disclosed technical content must be within the scope covered. At the same time, terms such as "above", "first", "second" and "one" quoted in this specification are only for convenience of description, and are not used to limit the scope of implementation of this application. The change or adjustment of the relative relationship shall also be regarded as the implementable scope of the present application without substantive change in the technical content.

It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the front view direction, the transverse section may be a section corresponding to the right view direction, and the horizontal section may be a section corresponding to the top view direction.

In addition, the embodiments in the present application and the features in the embodiments can be combined with each other under the condition of no conflict. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

Referring to FIG. 3 , FIG. 3 is a schematic diagram of a longitudinal cross-sectional structure of an embodiment 3a of a sputtering chamber according to the present application. As shown in Figure 3, the sputtering chamber 3a of the embodiment of the present application includes:

a cavity 20 having an inner wall 21;

The target 22 is arranged at one end of the cavity 20;

The bias magnetic field device 23 is arranged along the inner wall 21 in the cavity 20;

a sheet metal component 24 covering the inner wall 21;

The mask component 25 is thicker than the metal plate component 24 , is disposed between the bias magnetic field device 23 and the target 22 , and is configured to reduce the influence of the magnetic field of the bias magnetic field device 23 on the target 22 .

Here, the cavity 20 may be cylindrical, and an opening may be provided at the upper end.

Here, the target material 22 is a material for coating, which is a target material bombarded by high-speed energetic particles in the plasma. Different coatings can be obtained through the interaction of different plasmas and different targets. The target 22 may be disposed at one end of the cavity 20 with an opening.

Here, the bias magnetic field device 23 can adopt various types of magnets and is arranged along the inner wall 21 . Optionally, the bias magnetic field device 23 may include at least one pair of magnets, which may be circumferentially arranged in the cavity 20 . The bias magnetic field device 23 is used to generate a bias magnetic field to improve the consistency of the magnetic moment arrangement of the coating.

Here, the metal plate component 24 covers the inner wall 21 and mainly serves as a shield to prevent the material of the target 22 from adhering to the inner wall 21 to cause pollution during the sputtering process. Optionally, the metal plate component 24 may further cover the bias magnetic field device 23 to prevent the material of the target 22 from adhering to the bias magnetic field device 23 and causing pollution.

Here, the mask assembly 25 can be a plate-shaped, sheet-shaped or block-shaped metal material, which is arranged between the bias magnetic field device 23 and the target 22, and mainly acts as a magnetic barrier (or magnetic shield) to reduce the The influence of the magnetic field of the bias magnetic field device 23 on the target 22 stabilizes the voltage of the target. In order to function better, the thickness of the mask component 25 may be greater than the thickness of the metal plate component 24 . Generally, the thickness of the metal plate component 24 can be between 0.5mm～1mm, the thickness of the mask component 25 can be more than 1mm or more than 2mm or more than 3mm, or one or more mask components 25 in the above thickness can be mutually Overlay combination. Here, the thicker mask assembly 25 can effectively block the influence of the bias magnetic field on the surface of the target 22 , and the thinner mask assembly 25 can help to accurately control the degree of influence of the bias magnetic field on the surface of the target 22 .

In some optional embodiments, the material of the mask assembly 25 may be: stainless steel, or the surface is coated with stainless steel, or the material of stainless steel and the surface has been anodized. The stainless steel material has high strength and is not easy to damage. Here, magnetically conductive stainless steel or nonmagnetic stainless steel can be used.

In some other optional implementation manners, the material of the mask component 25 may be: ceramic material, or the surface is covered with ceramic. The ceramic material has high hardness and is not easy to damage. More importantly, the sputtering process includes a high temperature process, and the ceramic material is not easy to deform under high temperature.

In some other optional embodiments, the material of the shield assembly 25 may also be materials other than stainless steel or ceramics, as long as it can play a role of magnetically blocking (magnetically shielding) the bias magnetic field device 23 .

In some optional implementation manners, refer to FIG. 4 , which is a schematic longitudinal cross-sectional structure diagram of an embodiment of the mask assembly 25 . As shown in FIG. 4 , the mask assembly 25 can be formed by stacking a plurality of sheet-shaped mask parts 251 in the vertical direction. By increasing or decreasing the number of sheet-shaped masking elements 251 , it is convenient to adjust the thickness of the masking assembly 25 , and then adjust the degree of influence of the bias magnetic field device 23 on the magnetic field on the surface of the target 22 .

In some optional implementation manners, refer to FIG. 5 , which is a schematic top view of an embodiment of the mask assembly 25 . As shown in FIG. 5 , the mask assembly 25 can be formed by combining a plurality of block-shaped mask parts 252 in the horizontal direction. By splitting the mask assembly 25 into a plurality of block-shaped mask parts 252 in the horizontal direction, the weight of the independent mask assembly 25 can be avoided. Since the block-shaped mask parts 252 are lighter in weight, they are easier to carry disassembly.

In some optional implementations, referring to FIG. 3 , a bracket 30 may be provided inside the cavity 20 along the inner wall 21 , and the bracket 30 is configured to carry the bias magnetic field device 23 .

In some optional embodiments, referring to FIG. 3 , the metal plate component 24 further covers the bias magnetic field device 23 , and the shield component 25 and the bias magnetic field device 23 are separated by the metal plate component 24 . Optionally, the metal plate component 24 forms a horizontal step above the bias magnetic field device 23 for placing the mask component 25 .

In some optional embodiments, referring to FIG. 3 , there may be a base 28 inside the cavity 20, and the base 28 is disposed at the other end of the cavity 20 relative to the target 22, and may have a plane facing the target 22. , used to carry objects to be sputtered (such as wafers). The susceptor 28 and the sputtered material carried thereon may be surrounded by the bias magnetic field device 23 .

In some optional embodiments, referring to FIG. 3, the sputtering chamber 3a further includes a metal ring component 29 disposed in the cavity 20, and the metal ring component 29 is configured to cover the base 28 and the bias magnetic field device 23 gaps between. Here, the metal ring component 29 is also used as a shield to complement the coverage of the metal plate component 24, and the gap between the base 28 and the bias magnetic field device 23 is also included in the shielding range. Optionally, the metal ring component 29 can be snapped together with the metal plate component 24 and can be disassembled when necessary. It is easy to understand that when the opening design in the center of the metal plate component 24 is less, it may hinder the putting in or taking out of the sputtered material; 28 and the object to be sputtered form a gap, causing the target 22 material to be attached to the inner wall 21 of the cavity 20 through the gap; and by designing the detachable metal ring component 29, it can be removed for easy placement when needed Or take out the object to be sputtered, and carry out the sputtering process after loading, so as to shield the void.

In some optional embodiments, referring to Fig. 3, the opening end of the cavity 20 is provided with a back plate 26, the back plate 26 can be opened or closed, the opening of the cavity 20 can be closed when closed, and the opening of the cavity 20 can be opened when opened. Place the object to be sputtered (such as a wafer) or take out the object to be sputtered. Here, the target material 22 may be fixed on the inner side of the back plate 26 (the side facing the inside of the cavity 20 ) in an adhesive manner.

In some optional embodiments, referring to FIG. 3 , the sputtering chamber 3 a further includes a magnet assembly 27 disposed outside the back plate 26 . The magnet assembly 27 is configured to affect the magnetic field on the surface of the target 22, improve the plasma distribution of the plasma (that is, plasma) generated by plasma ions bombarding the surface of the target 22, and make the plasma distribution more uniform.

In some optional embodiments, referring to FIG. 6 , the back plate 26 can be thinned to reduce the distance between the surface of the target 22 (the lower surface facing the inside of the cavity 20 ) and the magnet assembly 27, thereby increasing The influence of the magnetic field of the magnet assembly 27 on the surface of the target 22 stabilizes the voltage of the target. Figure 6 shows a schematic diagram of the structure comparison before and after the thinning of the back plate 26, as shown in the structure on the left in Figure 6, the distance between the surface of the target material 22 and the magnet assembly 27 before the thinning of the back plate 26 is D1, as shown in Figure 6 As shown in the middle right structure, the distance between the surface of the target 22 and the magnet assembly 27 before the back plate 26 is thinned is D2, and the thickness of the distance D2 after thinning is reduced by d0 compared with the distance D1 before thinning. Optionally, the thinned thickness d0 may be equal to or greater than 1mm. Optionally, the thickness of the thinned front backplane 26 may be 21mm or more, and the thickness of the thinned backplane 26 may not be greater than 20mm.

Referring to FIG. 7 , FIG. 7 is a schematic diagram of the target voltage during operation of the sputtering chamber according to the present application, wherein the thickness of the target 22 is 6 mm. It can be seen from Fig. 7 that the fluctuation range of the target voltage (that is, the voltage on the surface of the target 22) is about 470 to 477, and the fluctuation range drops to 7V, which shows that the uniformity of the plasma distribution on the surface of the target 22 has been greatly improved.

Please refer to Table 1 below, Table 1 shows the comparison of target voltage in several cases. In the first case in Table 1, the target material 22 is not thinned and the mask assembly 25 is not provided, and the voltage fluctuation range of the target reaches 440V; in the second case, the target material 22 is thinned and the mask assembly 25 is not provided, The target voltage fluctuation range is reduced to 422V; in the third case, the target material 22 is thinned and the mask assembly 25 is set, and the target voltage fluctuation range is reduced to 7V. It can be seen from Table 1 that by setting the mask assembly 25 and thinning the target material 22, the uniformity of plasma distribution on the surface of the target material 22 can be effectively improved.

Table 1

serial number Backplane mask component Target voltage volatility 1 Backplane not thinned none 560～1000 440 2 backplane thinning none 562～984 422 3 backplane thinning have 470～477 7

As mentioned above, the embodiment of the present application proposes a sputtering chamber 3a. In the cavity 20 for sputtering, the target 22 can be attached on the back plate 26, and the back plate 26 and the target 22 are arranged on one end of the cavity 20 that is provided with an opening, wherein the target 22 faces the cavity body 20 inside, the back plate 26 faces the outside of the cavity 20; a base 28 can be arranged in the cavity 20 to carry the object to be sputtered; there can be a bias magnetic field device 23 arranged around the base 28 to affect The magnetic moment of the target 22 material improves the consistency of the magnetic moment arrangement of the coating; there may be a metal plate-shaped component 24 covering the inner wall 21 of the cavity 20 and acting as a shield to avoid the adhesion of the target 22 material during the sputtering process In the inner wall 21 of the cavity 20; there may be a shield assembly 25 which acts as a magnetic shield, which is arranged between the bias magnetic field device 23 and the target 22 and covers the bias magnetic field device 23, so as to reduce the bias magnetic field device 23 Effect of Magnetic Field on Target 22 . In addition, outside the cavity 20 , there may be a magnet assembly 27 disposed outside the back plate 26 .

Seen from the direction of the target 22, the appearance of the mask assembly 25 is roughly the same as the distribution of the bias magnetic field device 23. Since it covers the bias magnetic field device 23, it can also avoid the material adhesion of the target 22 just like the metal plate-shaped assembly 24. Contamination is caused on the bias magnetic field device 23, because the purpose of the shield assembly 25 is to reduce the magnetic field influence of the bias magnetic field device 23 on the surface of the target material 22, so the thickness of the shield assembly 25 can be thicker than the metal plate assembly 24 big.

The mask assembly 25 can be a single thick piece, or thin and multi-layered, and is used to adjust the degree of influence of the bias magnetic field device 23 on the magnetic field on the surface of the target 22 . The mask assembly 25 may also be composed of multiple pieces, so as to facilitate handling and disassembly.

The material of the mask assembly 25 can be stainless steel, which can be non-magnetic or magnetic. The surface of the stainless steel can be further anodized, and the surface of the stainless steel can also be coated with ceramic materials to prolong the service life. . The material of the mask assembly 25 can also be made of ceramics, which can avoid thermal deformation.

In addition, it is also possible to make the surface of the target 22 closer to the magnet assembly 27 on the rear side of the back plate 26 by thinning the back plate 26, so that the surface of the target 22 is more affected by the magnetic field of the magnet assembly 27. .

In the sputtering chamber of the present application, by adopting the above technical scheme, the technical effects obtained include but are not limited to: by setting the mask assembly 25 between the bias magnetic field device 23 and the target 22 in the chamber 20, it is possible to use Mask assembly 25 is used to reduce the influence of the magnetic field of bias magnetic field device 23 on target material 22, which is equivalent to improving the influence of the magnetic field of magnet assembly 27 on the outside of back plate 26 on the surface of target material 22, by making the magnet on the outside of back plate 26 The influence of the magnetic field of the component 27 on the surface of the target 22 is greater than that of the bias magnetic field device 23 on the surface of the target 22, which can stabilize the voltage on the surface of the target 22 and improve the uniformity of the plasma distribution on the surface of the target 22, thereby improving the coating uniformity.

Referring to FIG. 8 , FIG. 8 is a schematic longitudinal cross-sectional view of an embodiment 8a of a sputtering chamber according to the present application. The sputtering chamber 8a shown in Figure 8 is similar to the sputtering chamber 3a shown in Figure 3, the difference is that:

In the sputtering chamber 8a, another metal plate component 24 is covered above the mask component 25 .

By covering another metal plate component 24 above the mask component 25 , it is possible to prevent the material of the target 22 from adhering to the mask component 25 and causing contamination, thereby reducing cleaning times.

Referring to FIG. 9 , FIG. 9 is a schematic longitudinal cross-sectional view of an embodiment 9a of a sputtering chamber according to the present application. The sputtering chamber 9a shown in Figure 9 is similar to the sputtering chamber 3a shown in Figure 3, except that:

In the sputtering chamber 9a, the mask assembly 25 is arranged between the metal plate assembly 24 and the bias magnetic field device 23 . That is, after the bias magnetic field device 23 is placed in the cavity 20, the mask assembly 25 can then be arranged above the bias magnetic field device 23 and cover the bias magnetic field device 23, the two form a suite, and finally the metal plate is arranged Shaped component 24, the metal plate-shaped component 24 wraps the suite, and is used to shield the inner wall 21 of the cavity 20, the shield component 25 and the bias magnetic field device 23.

While the application has been described and illustrated with reference to particular embodiments of the application, these descriptions and illustrations do not limit the application. It will be clearly understood by those skilled in the art that various changes may be made and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the application as defined by the appended claims. Illustrations may not necessarily be drawn to scale. Due to variables in the manufacturing process, etc., there may be differences between the technical reproductions in this application and the actual implementation. There may be other embodiments of the application not specifically described. The description and illustrations are to be regarded as illustrative, not restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method or process to the objective, spirit and scope of the application. All such modifications are intended to fall within the scope of the claims appended hereto. Although methods disclosed herein have been described with reference to particular operations performed in a particular order, it should be understood that such operations may be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of the application. Accordingly, the order and grouping of operations does not limit the application unless otherwise indicated herein.

Claims (10)

1. A sputtering chamber, comprising:

a cavity having an inner wall;

the target material is arranged at one end of the cavity;

a bias magnetic field device arranged along the inner wall in the cavity;

a metal plate-like member covering the inner wall;

and the mask component is thicker than the metal plate component, is arranged between the bias magnetic field device and the target and is configured to reduce the influence of the magnetic field of the bias magnetic field device on the target.

2. The sputtering chamber of claim 1 wherein the shield assembly is formed primarily of a plurality of sheet-like shield members stacked in a vertical direction.

3. The sputtering chamber of claim 1 wherein the shield assembly is comprised of a plurality of block-shaped shield members combined in a horizontal direction.

4. The sputtering chamber of claim 1, wherein the mask assembly is made of stainless steel or ceramic, or wherein the surface of the mask assembly is coated with stainless steel or ceramic, or wherein the mask assembly is made of stainless steel and the surface is anodized.

5. The sputtering chamber of claim 1 wherein the metal plate assembly further covers the bias field device, the shield assembly being spaced from the bias field device by the metal plate assembly.

6. The sputtering chamber of claim 5 wherein the shield assembly is covered with another metal plate assembly.

7. The sputtering chamber of claim 1 wherein the shield assembly is disposed between the metal plate assembly and the bias magnetic field device.

8. The sputtering chamber of claim 1 wherein the target is bonded to a thinned backing plate, the backing plate having a thickness of no more than 20mm.

9. The sputtering chamber of claim 1 wherein the target is attached to a backing plate, the sputtering chamber further comprising a magnet assembly disposed outside the backing plate.

10. The sputtering chamber of claim 1 further comprising:

the base is arranged at the other end of the cavity opposite to the target and is used for bearing a sputtered object;

and the metal annular assembly covers a gap between the base and the bias magnetic field device.