CN219637327U - Sputtering cavity - Google Patents

Abstract

The utility model provides a sputtering cavity, which comprises: a cavity having an inner wall; the target material is arranged at one end of the cavity; a bias magnetic field device arranged along the inner wall in the cavity; a metal plate-like member covering the inner wall; and the mask component is thicker than the metal plate component, is arranged between the bias magnetic field device and the target and is configured to reduce the influence of the magnetic field of the bias magnetic field device on the target. According to the utility model, the mask assembly positioned between the bias magnetic field device and the target is arranged in the cavity, so that the influence of the magnetic field of the bias magnetic field device on the target can be reduced by using the mask assembly, which is equivalent to improving the influence of the magnetic field of the magnet assembly outside the backboard on the target surface, and the influence of the magnetic field of the magnet assembly outside the backboard on the target surface is larger than the influence of the bias magnetic field device on the target surface, so that the target voltage can be stabilized, the uniformity of plasma distribution on the target surface is improved, and the uniformity of the coating film is improved.

Description

Sputtering cavity

Technical Field

The utility model relates to the technical field of semiconductor packaging, in particular to a sputtering cavity.

Background

The Sputtering (Sputtering) process is one of PVD (Physical Vapor Deposition ) processes of semiconductor packaging technology, and needs to be performed by a Sputtering machine.

Referring to fig. 1, fig. 1 is a schematic longitudinal sectional view of a sputtering chamber of a sputtering machine in the prior art. As shown in fig. 1, the sputtering chamber of the sputtering machine comprises a chamber 10, one end of the chamber 10 is provided with a target 11, the target 11 can be fixed on the inner side (front) of a back plate 12, the outer side (rear) of the back plate 12 can be provided with a magnet assembly 13, the other end of the chamber 10 is provided with a base 15 for placing a sputtered material, a bias magnet 14 can be arranged in the chamber 10, and the bias magnet 14 is arranged along the inner wall of the chamber 10.

The magnetic field on the surface of the target 11 is mainly affected by the magnet assembly 13 behind the backing plate 12, and the magnetic field distribution affects the plasma distribution (i.e., plasma density) of the plasma (i.e., plasma) generated by the ion bombardment of the surface of the target 11, so that the plasma distribution on the surface of the target 11 is more uniform. In the sputtering (sputtering) step, the usable time of the target 11 is related to the thickness of the target 11, and when the thickness is thicker, the longer the usable time of the target 11 is, the longer the frequency of changing the target 11 can be, so that shutdown is reduced, and yield is improved.

However, when the thickness of the target 11 is increased, for example, from 3mm to 6mm, there is a problem in that uniformity of the plating film is not good. This problem arises mainly from the fact that the surface of the target 11 being bombarded with ions changes in thickness of the target 11, such that the surface of the target 11 is far from the magnet assembly 13 behind the backing plate 12 and is closer to the bias magnet 14 in the chamber 10, such that the influence of the magnetic field of the bias magnet 14 on the magnetic field of the surface of the target 11 is increased, thereby affecting the distribution of plasma ions, resulting in a decrease in the uniformity of the plasma distribution on the surface of the target 11.

During the sputtering process, the fluctuation of the target voltage (i.e., the voltage at the surface of the target 11) can be monitored to preliminarily determine the uniformity of the plasma distribution at the surface of the target 11. The fluctuation range of the target voltage is generally within 100V when the thickness of the target is 3 mm. Referring to fig. 2, which shows a schematic diagram of the target voltage when the thickness of the target 11 is increased to 6mm, it can be seen that the target voltage (i.e., the voltage at the surface of the target 11) fluctuates between about 560V to 1000V with a fluctuation width of 440V. This means that when the thickness of the target 11 is increased to 6mm, the uniformity of the plasma distribution on the surface of the target 11 is seriously lowered, which causes a problem of poor uniformity of the plating film.

Disclosure of Invention

The utility model aims to provide a sputtering cavity suitable for a sputtering machine table, so as to solve the technical problem that the bias magnetic field in the sputtering cavity has too much influence on the magnetic field on the surface of a target.

In order to achieve the above purpose, the present utility model provides the following technical solutions: a sputtering chamber, comprising: a cavity having an inner wall; the target material is arranged at one end of the cavity; a bias magnetic field device arranged along the inner wall in the cavity; a metal plate-like member covering the inner wall; and the mask component is thicker than the metal plate component, is arranged between the bias magnetic field device and the target and is configured to reduce the influence of the magnetic field of the bias magnetic field device on the target.

In some alternative embodiments, the mask assembly is formed primarily of a plurality of sheet-like mask members stacked in a vertical direction.

In some alternative embodiments, the mask assembly is composed mainly of a plurality of block-shaped mask members combined in the horizontal direction.

In some alternative embodiments, the material of the mask component is stainless steel or ceramic, or the surface of the mask component is coated with stainless steel or ceramic, or the material of the mask component is stainless steel and the surface is anodized.

In some alternative embodiments, the sheet metal component further covers the bias magnetic field device, and the mask component is separated from the bias magnetic field device by the sheet metal component.

In some alternative embodiments, the mask assembly is covered with another sheet metal assembly.

In some alternative embodiments, the shield assembly is disposed between the sheet metal assembly and the bias magnetic field device.

In some alternative embodiments, the target is attached to a thinned backing plate having a thickness of no more than 20mm.

In some alternative embodiments, the target is attached to a backing plate, and the sputtering chamber further includes a magnet assembly disposed outside the backing plate.

In some alternative embodiments, the sputtering chamber further comprises: the base is arranged at the other end of the cavity opposite to the target and is used for bearing a sputtered object; and the metal annular assembly covers a gap between the base and the bias magnetic field device.

The utility model provides a sputtering cavity suitable for a sputtering machine, aiming at solving the technical problem that the uniformity of a coating film is reduced due to the fact that the bias magnetic field in the sputtering cavity has overlarge influence on the magnetic field on the surface of a target material so as to influence plasma distribution. According to the utility model, the mask assembly positioned between the bias magnetic field device and the target is arranged in the cavity, so that the influence of the magnetic field of the bias magnetic field device on the target can be reduced by using the mask assembly, which is equivalent to improving the influence of the magnetic field of the magnet assembly outside the backboard on the target surface, and the influence of the magnetic field of the magnet assembly outside the backboard on the target surface is larger than the influence of the bias magnetic field device on the target surface, so that the target voltage can be stabilized, the uniformity of plasma distribution on the target surface is improved, and the uniformity of the coating film is improved.

In a further embodiment, the target can be attached to a thinned back plate with a thickness not greater than 20mm, and the distance between the surfaces of the target is reduced by thinning the back plate, so that the influence of the magnetic field of the magnet assembly on the outer side of the back plate on the surfaces of the target can be increased, the voltage of the target is stabilized, the uniformity of plasma distribution on the surfaces of the target is further improved, and the uniformity of coating is further improved.

Drawings

Other features, objects and advantages of the present utility model will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:

FIG. 1 is a schematic view of a longitudinal cross-sectional structure of a sputtering chamber of the prior art;

FIG. 2 is a schematic diagram of the target voltage of a sputtering chamber during operation;

FIG. 3 is a schematic longitudinal cross-sectional view of one embodiment 3a of a sputtering chamber according to the present utility model;

FIG. 4 is a schematic longitudinal cross-sectional view of a mask assembly according to one embodiment of the utility model;

FIG. 5 is a schematic top view of a mask assembly according to one embodiment of the utility model;

FIG. 6 is a schematic diagram of a comparison of one embodiment of a sputtering chamber of the present utility model with an existing sputtering chamber;

FIG. 7 is a schematic diagram of the target voltage of the sputtering chamber during operation according to the present utility model;

FIG. 8 is a schematic longitudinal cross-sectional view of one embodiment 8a of a sputtering chamber according to the present utility model;

fig. 9 is a schematic longitudinal sectional view of an embodiment 9a of a sputtering chamber according to the present utility model.

Reference numerals/symbol description:

10-a cavity; 11-target material; 12-a back plate; 13-a magnet assembly; 14-bias magnetic field device; 15-a base; 20-a cavity; 21-inner wall; 22-target material; 23-bias magnetic field means; 24-metal plate assembly; 25-a mask assembly; 251-sheet-like mask member; 252-block-shaped mask member; 26-a back plate; a 27-magnet assembly; 28-base; 29-a metal ring assembly; 30-bracket.

Detailed Description

The following description of the embodiments of the present utility model will be given with reference to the accompanying drawings and examples, and it is easy for those skilled in the art to understand the technical problems and effects of the present utility model. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant utility model and are not limiting of the utility model. In addition, for convenience of description, only parts related to the relevant utility model are shown in the drawings.

It should be readily understood that the meanings of "on", "above" and "above" in the present utility model should be interpreted in the broadest sense so that "on" means not only "directly on" but also "on" including intermediate components or layers that exist therebetween.

Further, spatially relative terms, such as "below," "under," "lower," "above," "upper," and the like, may be used herein for ease of description to describe one element or component's relationship to another element or component as illustrated in the figures. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 ° or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

As used herein, the terms "substantially," "about," and "approximately" are used to indicate and explain minor variations. For example, when used in connection with a numerical value, the term may refer to a range of variation of less than or equal to the corresponding numerical value of + -10%, such as a range of variation of less than or equal to + -5%, less than or equal to + -4%, less than or equal to + -3%, less than or equal to + -2%, less than or equal to + -1%, less than or equal to + -0.5%, less than or equal to + -0.1%, or less than or equal to + -0.05%. As another example, the thickness of the film or layer is "substantially uniform

The average thickness of the film or layer may refer to a standard deviation of less than or equal to + -10%, such as less than or equal to + -5%, less than or equal to + -4%, less than or equal to + -3%, less than or equal to + -2%, less than or equal to + -1%, less than or equal to + -0.5%, less than or equal to + -0.1%, or less than or equal to + -0.05%. The term "substantially coplanar" may refer to two surfaces lying within 50 μm along the same plane (such as within 40 μm, within 30 μm, within 20 μm, within 10 μm, or within 1 μm along the same plane). Two components may be considered to be "substantially aligned" if, for example, the two components overlap or overlap within 200 μm, 150 μm, 100 μm, 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm. Two surfaces or components may be considered "substantially perpendicular" if the angle between them is, for example, 90 ° ± 10 ° (such as ± 5 °, ±4 °, ±3°, ±2°, ±1°, ±0.5 °, ±0.1°, or ± 0.05 °). When used in connection with an event or circumstance, the terms "substantially," "substantial," "about," and "approximately" can refer to the precise occurrence of the event or circumstance and the very close proximity of the event or circumstance.

It should be noted that, the structures, proportions, sizes, etc. shown in the drawings are only used for being matched with those described in the specification for understanding and reading, and are not intended to limit the applicable limitation of the present utility model, so that the present utility model has no technical significance, and any modification of structures, changes in proportions or adjustment of sizes, without affecting the efficacy and achievement of the present utility model, should still fall within the scope covered by the technical content disclosed in the present utility model. Also, the terms "upper", "first", "second", and "a" and the like are used herein for descriptive purposes only and are not intended to limit the scope of the utility model for which the utility model may be practiced, but rather for relative changes or modifications without materially altering the technical context.

It should be further noted that, in the embodiment of the present utility model, the corresponding longitudinal section may be a section corresponding to a front view direction, the corresponding transverse section may be a section corresponding to a right view direction, and the corresponding horizontal section may be a section corresponding to an upper view direction.

In addition, the embodiments of the present utility model and the features in the embodiments may be combined with each other without collision. The utility model will be described in detail below with reference to the drawings in connection with embodiments.

Referring to fig. 3, fig. 3 is a schematic longitudinal sectional structure of an embodiment 3a of a sputtering chamber according to the present utility model. As shown in fig. 3, a sputtering chamber 3a according to an embodiment of the present utility model includes:

a cavity 20 having an inner wall 21;

a target 22 disposed at one end of the chamber 20;

a bias magnetic field device 23 disposed along the inner wall 21 in the chamber 20;

a metal plate-like member 24 covering the inner wall 21;

the mask assembly 25, which is thicker than the metal plate assembly 24, is disposed between the bias magnetic field device 23 and the target 22, and is configured to reduce the influence of the magnetic field of the bias magnetic field device 23 on the target 22.

Here, the cavity 20 may have a cylindrical shape, and an upper end may be provided with an opening.

Here, the target 22 is a material for forming a plating film, and is a target material bombarded with high-speed charged particles in plasma. Different coatings can be obtained by the interaction of different plasmas and different targets. The target 22 may be disposed at an end of the chamber 20 where the opening is provided.

Here, the bias magnetic field device 23 may employ various types of magnets, and is disposed along the inner wall 21. Alternatively, the bias magnetic field device 23 may include at least one pair of magnets, and may be circumferentially disposed within the cavity 20. The bias magnetic field device 23 is used for generating a bias magnetic field to improve the uniformity of the arrangement of the magnetic moments of the plating films.

Here, the metal plate assembly 24 covers the inner wall 21, and mainly functions as a shield (shield) to prevent the target 22 material from adhering to the inner wall 21 during the sputtering process to cause contamination. Optionally, the metal plate assembly 24 may further cover the bias magnetic field device 23 to prevent the target 22 material from adhering to the bias magnetic field device 23 and causing contamination.

Here, the mask assembly 25 may be a plate-shaped or sheet-shaped or block-shaped metal material, and is disposed between the bias magnetic field device 23 and the target 22, and mainly functions as a magnetic barrier (or magnetic shield) for reducing the influence of the magnetic field of the bias magnetic field device 23 on the target 22 and stabilizing the target voltage. For better functioning, the thickness of the mask assembly 25 may be greater than the thickness of the sheet metal assembly 24. In general, the thickness of the sheet metal component 24 may be between 0.5mm and 1mm, the thickness of the mask component 25 may be above 1mm or above 2mm or above 3mm, or a combination of one or more of the above thicknesses 25 superimposed on each other. Here, the thicker mask assembly 25 may effectively block the influence of the bias magnetic field on the surface of the target 22, and the thinner mask assembly 25 may help to precisely control the degree of influence of the bias magnetic field on the surface of the target 22.

In some alternative embodiments, the mask assembly 25 may be made of: stainless steel, or the surface is coated with stainless steel, or the surface is anodized. The stainless steel material has higher strength and is not easy to damage. Here, magnetic stainless steel may be used, or non-magnetic stainless steel may be used.

In other alternative embodiments, the mask assembly 25 may be made of: ceramic material, or the surface is coated with ceramic. The ceramic material has higher hardness and is not easy to damage. More importantly, the sputtering process comprises a high-temperature process, and the ceramic material is not easy to deform at high temperature.

In other alternative embodiments, the material of the mask assembly 25 may be other than stainless steel or ceramic, so long as it can function as a magnetic barrier (magnetic shielding) for the bias magnetic field device 23.

In some alternative embodiments, referring to fig. 4, fig. 4 is a schematic longitudinal cross-sectional view of one example of a mask assembly 25. As shown in fig. 4, the mask assembly 25 may be formed by stacking a plurality of sheet-like mask members 251 in a vertical direction. By increasing or decreasing the number of the sheet-like mask members 251, it is convenient to adjust the thickness of the mask assembly 25, and thus the degree of influence of the bias magnetic field device 23 on the surface magnetic field of the target 22.

In some alternative embodiments, referring to fig. 5, fig. 5 is a schematic top view of one example of a mask assembly 25. As shown in fig. 5, the mask assembly 25 may be composed of a plurality of block-shaped mask pieces 252 combined in the horizontal direction. By splitting the mask assembly 25 into a plurality of block-shaped mask members 252 in the horizontal direction, the individual mask members 25 can be prevented from being excessively heavy, and the block-shaped mask members 252 are lighter in weight and easier to handle and disassemble.

In some alternative embodiments, referring to fig. 3, a bracket 30 may be provided along the inner wall 21 inside the cavity 20, the bracket 30 being configured to carry the bias magnetic field device 23.

In some alternative embodiments, referring to fig. 3, the metal plate-like member 24 further covers the bias magnetic field device 23, and the mask member 25 is separated from the bias magnetic field device 23 by the metal plate-like member 24. Alternatively, the metal plate-like member 24 forms a horizontal step above the bias magnetic field device 23 for placing the mask member 25.

In some alternative embodiments, referring to fig. 3, the chamber 20 may have a susceptor 28 disposed therein, and the susceptor 28 is disposed at the other end of the chamber 20 opposite to the target 22, and may have a plane facing the target 22 for carrying a sputtered material (e.g., a wafer). The pedestal 28 and sputtered material carried thereon may be surrounded by the bias field device 23.

In some alternative embodiments, referring to fig. 3, the sputtering chamber 3a further comprises a metallic annular assembly 29 disposed within the chamber 20, the metallic annular assembly 29 being configured to cover the gap between the pedestal 28 and the bias magnetic field device 23. Here, the metal ring assembly 29 also serves as a shield (shield) for complementing the coverage of the metal plate assembly 24, and the gap between the base 28 and the bias magnetic field device 23 is also included in the shield. Alternatively, the metal ring component 29 may be snap-fitted with the metal plate component 24 and removed when necessary. It will be readily appreciated that when the opening in the center of the sheet metal component 24 is designed to be small, it may be difficult to place or remove the sputtered material; when the opening in the center of the sheet metal component 24 is designed to be large, a gap is formed between the base 28 and the sputtered material, resulting in the target 22 material being attached to the inner wall 21 of the chamber 20 through the gap; by designing the detachable metal ring assembly 29, the sputtering process can be performed to shield the gap after the sputtering target is removed for the purpose of loading and unloading the sputtering target.

In some alternative embodiments, referring to fig. 3, the open end of the chamber 20 is provided with a back plate 26, and the back plate 26 may be opened or closed, and when closed, may close the opening of the chamber 20, and when opened, may place a sputtered object (e.g., a wafer) into the chamber 20 or take out the sputtered object. Here, the target 22 may be fixed inside the back plate 26 (toward the inside of the chamber 20) in a fitting manner.

In some alternative embodiments, referring to fig. 3, the sputtering chamber 3a further includes a magnet assembly 27 disposed outside of the backing plate 26. The magnet assembly 27 is configured to influence the magnetic field at the surface of the target 22 to enhance the plasma distribution of the plasma (i.e., plasma) generated by the plasma ions striking the surface of the target 22, resulting in a more uniform plasma distribution.

In some alternative embodiments, referring to fig. 6, the backing plate 26 may be thinned to reduce the spacing between the surface of the target 22 (the lower surface facing the interior of the chamber 20) and the magnet assembly 27, thereby increasing the effect of the magnetic field of the magnet assembly 27 on the surface of the target 22 and stabilizing the target voltage. Fig. 6 shows a schematic diagram of the structure of the back plate 26 before and after thinning, the distance between the surface of the target 22 and the magnet assembly 27 is D1 before thinning the back plate 26, the distance between the surface of the target 22 and the magnet assembly 27 is D2 before thinning the back plate 26, and the thickness of the distance D2 is reduced by D0 compared with the distance D1 before thinning, as shown in the structure on the right side in fig. 6. Alternatively, the reduced thickness d0 may be equal to or greater than 1mm. Alternatively, the thickness of the thinned front plate 26 may be 21mm or more, and the thickness of the thinned rear plate 26 may be not more than 20mm.

Referring to fig. 7, fig. 7 is a schematic diagram of the target voltage during operation of the sputtering chamber according to the present utility model, wherein the thickness of the target 22 is 6mm. As can be seen from fig. 7, the fluctuation range of the target voltage (i.e., the voltage at the surface of the target 22) is about 470-477, and the fluctuation range is reduced to 7V, which means that the uniformity of the plasma distribution at the surface of the target 22 is greatly improved.

Referring to table 1 below, table 1 shows a comparison of target voltages for several cases. In the 1 st case of table 1, the target 22 was not thinned and the mask assembly 25 was not provided, and the target voltage fluctuation width reached 440V; in case 2, the target 22 is thinned and the mask assembly 25 is not arranged, so that the voltage fluctuation amplitude of the target is reduced to 422V; in case 3, the target 22 is thinned and the mask assembly 25 is provided, and the target voltage fluctuation range is reduced to 7V. As can be seen from table 1, by providing the mask assembly 25 and thinning the target 22, the uniformity of the plasma distribution on the surface of the target 22 can be effectively improved.

TABLE 1

Numbering device	Backboard	Mask assembly	Target voltage	Amplitude of fluctuation
					1	The backboard is not thinned	Without any means for	560～1000	440
2	Backboard thinning	Without any means for	562～984	422
					3	Backboard thinning	Has the following components	470～477	7

As described above, the embodiment of the present utility model proposes a sputtering chamber 3a. In the cavity 20 for sputtering, the target 22 may be attached to the backing plate 26, where the backing plate 26 and the target 22 are disposed at an end of the cavity 20 where the opening is disposed, where the target 22 faces the inner side of the cavity 20 and the backing plate 26 faces the outer side of the cavity 20; a pedestal 28 may be disposed within the chamber 20 for carrying a sputtered article; there may be a bias magnetic field device 23 disposed around the pedestal 28 to influence the magnetic moment of the target 22 material, so as to improve the uniformity of the magnetic moment arrangement of the plating film; a metal plate assembly 24 covering the inner wall 21 of the chamber 20 and having a shielding function can be provided to prevent the target 22 material from adhering to the inner wall 21 of the chamber 20 during sputtering; there may be a shielding assembly 25 acting as a magnetic shield, disposed between the bias magnetic field device 23 and the target 22 and covering the bias magnetic field device 23 to reduce the influence of the magnetic field of the bias magnetic field device 23 on the target 22. In addition, a magnet assembly 27 may be disposed outside the back plate 26 outside the cavity 20.

The appearance of the mask assembly 25 is substantially the same as the distribution of the bias magnetic field device 23 in terms of the direction of the target 22, and the mask assembly 25 is thicker than the metal plate assembly 24 because the mask assembly 25 covers the bias magnetic field device 23, so that the target 22 is prevented from being contaminated by the material attached to the bias magnetic field device 23, and the mask assembly 25 is designed to reduce the influence of the bias magnetic field device 23 on the surface of the target 22.

The mask assembly 25 may be monolithic thick or thin and multi-layered to adjust the degree of influence of the bias magnetic field device 23 on the magnetic field at the surface of the target 22. The mask assembly 25 may be formed by combining a plurality of pieces, so as to facilitate the handling and the disassembly.

The mask assembly 25 may be made of stainless steel, and the stainless steel may not have magnetic permeability, or may have magnetic permeability, and the surface of the stainless steel may be further anodized, or the surface of the stainless steel may be further coated with a ceramic material to extend the life. The mask assembly 25 may be made of ceramic, and may be prevented from being deformed by heat.

In addition, by thinning the back plate 26, the surface of the target 22 is closer to the magnet assembly 27 at the back side of the back plate 26, so that the influence of the magnetic field of the magnet assembly 27 on the surface of the target 22 can be increased.

By adopting the technical scheme, the sputtering cavity provided by the utility model has the technical effects that the sputtering cavity comprises, but is not limited to: by providing the mask assembly 25 located between the bias magnetic field device 23 and the target 22 in the cavity 20, the influence of the magnetic field of the bias magnetic field device 23 on the target 22 can be reduced by using the mask assembly 25, which is equivalent to improving the influence of the magnetic field of the magnet assembly 27 outside the back plate 26 on the surface of the target 22, and by making the influence of the magnetic field of the magnet assembly 27 outside the back plate 26 on the surface of the target 22 larger than the influence of the bias magnetic field device 23 on the surface of the target 22, the voltage on the surface of the target 22 can be stabilized, and the uniformity of plasma distribution on the surface of the target 22 can be improved, thereby improving the uniformity of the plating film.

Referring to fig. 8, fig. 8 is a schematic longitudinal sectional view of one embodiment 8a of a sputtering chamber according to the present utility model. The sputtering chamber 8a shown in fig. 8 is similar to the sputtering chamber 3a shown in fig. 3, except that:

in the sputtering chamber 8a, a mask member 25 is covered with another metal plate member 24.

By covering the other metal plate-like member 24 above the mask member 25, contamination caused by attachment of the target 22 material to the mask member 25 can be avoided, thereby reducing the number of cleaning times.

Referring to fig. 9, fig. 9 is a schematic longitudinal sectional structure of an embodiment 9a of a sputtering chamber according to the present utility model. The sputtering chamber 9a shown in fig. 9 is similar to the sputtering chamber 3a shown in fig. 3, except that:

in the sputtering chamber 9a, a shield member 25 is provided between the metal plate member 24 and the bias magnetic field device 23. That is, after the bias magnetic field device 23 is placed in the cavity 20, the shielding member 25 is then disposed above the bias magnetic field device 23 and covers the bias magnetic field device 23, so as to form a space, and finally, the metal plate member 24 is disposed, and the metal plate member 24 covers the space, so as to shield the inner wall 21 of the cavity 20, the shielding member 25 and the bias magnetic field device 23.

While the utility model has been described and illustrated with reference to specific embodiments thereof, the description and illustration is not intended to limit the utility model. It will be apparent to those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof within the embodiments thereof without departing from the true spirit and scope of the utility model as defined by the appended claims. The illustrations may not be drawn to scale. There may be a distinction between technical reproduction and actual implementation in the present utility model due to variables in the manufacturing process, etc. Other embodiments of the utility model not specifically illustrated may exist. The specification and drawings are to be regarded in an illustrative rather than a restrictive sense. Modifications may be made to adapt a particular situation, material, composition of matter, method or process to the objective, spirit and scope of the present utility model. All such modifications are intended to fall within the scope of the claims appended hereto. Although the methods disclosed herein have been described with reference to particular operations being performed in a particular order, it should be understood that these operations may be combined, sub-divided, or reordered to form an equivalent method without departing from the teachings of the present disclosure. Thus, the order and grouping of the operations is not a limitation of the present utility model unless specifically indicated herein.

Claims (10)

1. A sputtering chamber, comprising:

a cavity having an inner wall;

the target material is arranged at one end of the cavity;

a bias magnetic field device arranged along the inner wall in the cavity;

a metal plate-like member covering the inner wall;

and the mask component is thicker than the metal plate component, is arranged between the bias magnetic field device and the target and is configured to reduce the influence of the magnetic field of the bias magnetic field device on the target.

2. The sputtering chamber of claim 1 wherein the shield assembly is formed primarily of a plurality of sheet-like shield members stacked in a vertical direction.

3. The sputtering chamber of claim 1 wherein the shield assembly is comprised of a plurality of block-shaped shield members combined in a horizontal direction.

4. The sputtering chamber of claim 1, wherein the mask assembly is made of stainless steel or ceramic, or wherein the surface of the mask assembly is coated with stainless steel or ceramic, or wherein the mask assembly is made of stainless steel and the surface is anodized.

5. The sputtering chamber of claim 1 wherein the metal plate assembly further covers the bias field device, the shield assembly being spaced from the bias field device by the metal plate assembly.

6. The sputtering chamber of claim 5 wherein the shield assembly is covered with another metal plate assembly.

7. The sputtering chamber of claim 1 wherein the shield assembly is disposed between the metal plate assembly and the bias magnetic field device.

8. The sputtering chamber of claim 1 wherein the target is bonded to a thinned backing plate, the backing plate having a thickness of no more than 20mm.

9. The sputtering chamber of claim 1 wherein the target is attached to a backing plate, the sputtering chamber further comprising a magnet assembly disposed outside the backing plate.

10. The sputtering chamber of claim 1 further comprising:

the base is arranged at the other end of the cavity opposite to the target and is used for bearing a sputtered object;

and the metal annular assembly covers a gap between the base and the bias magnetic field device.