CN219568052U

CN219568052U - Film deposition equipment

Info

Publication number: CN219568052U
Application number: CN202320261267.0U
Authority: CN
Inventors: 野沢俊久; 杨华龙; 吴凤丽; 张启辉; 朱晓亮; 赵坤; 高鹏飞
Original assignee: Piotech Inc
Current assignee: Piotech Inc
Priority date: 2023-02-20
Filing date: 2023-02-20
Publication date: 2023-08-22
Anticipated expiration: 2033-02-20

Abstract

The utility model provides a thin film deposition device which comprises an air source, a reaction cavity, an exhaust channel, a first pipeline and a second pipeline. The gas source is connected with the exhaust channel through the first pipeline and is used for transmitting gas source gas with unstable early-stage gas pressure to the exhaust channel. The gas source is connected with the reaction cavity through the second pipeline and is used for transmitting gas source gas with stable gas pressure to the reaction cavity. The thin film deposition apparatus further includes a flow resistance adjusting device. The flow resistance adjusting device is arranged on the first pipeline and/or the second pipeline and is used for balancing the gas flow resistance in the first pipeline and the second pipeline so as to eliminate the instantaneous air pressure fluctuation when the first pipeline and the second pipeline are switched.

Description

Film deposition equipment

Technical Field

The utility model relates to the technical field of film deposition, in particular to film deposition equipment.

Background

In atomic layer deposition (Atomic layer deposition, ALD) processes, chemical sources are typically configured with a through-cavity line through the reaction cavity and a through-cavity bypass around the reaction cavity in order to increase throughput and achieve fast switching of gases. Before film deposition, the unstable chemical source gas can be introduced into the exhaust channel through the cavity bypass until the gas pressure in the pipeline is stable. And then, during film deposition, the gas with a chemical source can be introduced into the reaction cavity through a cavity through pipeline by rapidly switching a channel changing valve above the reaction cavity so as to perform efficient and accurate film deposition.

However, due to the difference of parameters such as the length, caliber, bending number, inner wall roughness, tube temperature and the like of the through cavity pipeline and the through cavity bypass, and the deviation between the theoretical value and the design value of the gas flow resistance, the gas flow resistance in the pipeline which is introduced into the reaction cavity and the pipeline which is introduced into the exhaust channel inevitably has the difference, so that the gas pressure fluctuation is caused at the moment of rapidly switching the pipeline. Fluctuation of gas pressure can in turn further lead to two problems: 1. the granularity caused by the reverse flow of the gas is poor; 2. more process deposition time is required to stabilize the pressure in order to eliminate the pressure fluctuations, resulting in a decrease in productivity.

In addition, during ALD deposition based on a liquid chemical source, the pressure within the liquid chemical source cylinder may be less than the saturated vapor pressure of the cylinder at the temperature at which the cylinder is being operated, due to the large fluctuations in gas pressure. At this time, the liquid chemical source is in a superheated steam state, and the pressure of the steel cylinder is raised instantaneously, so that the process flow is unstable and exceeds the actual requirement, and the deposition accuracy of the film thickness is affected.

In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a thin film deposition apparatus for equalizing the difference in gas flow resistance between a through-cavity pipe and a through-cavity bypass to eliminate pressure fluctuations during gas switching, thereby optimizing granularity of a thin film, improving deposition accuracy of a thin film thickness, and improving productivity of semiconductor devices.

Disclosure of Invention

The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

In order to overcome the defects in the prior art, the utility model provides a thin film deposition device which is used for balancing the difference of gas flow resistance between a through cavity pipeline and a through cavity bypass so as to eliminate pressure fluctuation in the gas switching process, thereby optimizing granularity of a thin film, improving deposition accuracy of thickness of the thin film and improving productivity of a semiconductor device.

Specifically, the thin film deposition apparatus provided by the utility model comprises a gas source, a reaction cavity, an exhaust channel, a first pipeline and a second pipeline. The gas source is connected with the exhaust channel through the first pipeline and is used for transmitting gas source gas with unstable early-stage gas pressure to the exhaust channel. The gas source is connected with the reaction cavity through the second pipeline and is used for transmitting gas source gas with stable gas pressure to the reaction cavity. The thin film deposition apparatus further includes a flow resistance adjusting device. The flow resistance adjusting device is arranged on the first pipeline and/or the second pipeline and is used for balancing the gas flow resistance in the first pipeline and the second pipeline so as to eliminate the instantaneous air pressure fluctuation when the first pipeline and the second pipeline are switched.

Further, in some embodiments of the present utility model, the flow resistance adjusting device is disposed on a smaller one of the first pipeline and the second pipeline for lifting the smaller one of the gas flow resistances to equalize the gas flow resistances in the first pipeline and the second pipeline.

Further, in some embodiments of the present utility model, a plurality of the flow resistance adjusting devices are provided to the first pipe and the second pipe, respectively. The difference between the first flow resistance of the first flow resistance adjusting device arranged on the first pipeline and the second flow resistance of the second flow resistance adjusting device arranged on the second pipeline is equal to the difference between the flow resistances of the first pipeline and the second pipeline so as to balance the flow resistances of the gases in the first pipeline and the second pipeline.

Further, in some embodiments of the present utility model, the flow resistance adjusting device includes a gas shielding portion and a ventilation portion, and the flow resistance corresponds to the caliber of the ventilation portion. The gas shielding part is positioned in the gas flow path of the first pipeline and/or the second pipeline, and the first pipeline and/or the second pipeline transmits gas through the ventilation part of the flow resistance adjusting device.

Further, in some embodiments of the present utility model, the flow resistance adjusting device is provided at an inlet end and/or an outlet end of the first pipeline and/or the second pipeline, and a first fastening structure is provided thereon to fixedly connect the second fastening structure of the inlet end and/or the outlet end.

Further, in some embodiments of the utility model, the shape of the vent is selected from at least one of circular, rectangular, triangular.

Further, in some embodiments of the utility model, the gas source comprises a carrier gas source and a liquid chemical source. The carrier gas of the carrier gas source passes through the liquid chemical source first, and carries chemical components in the liquid chemical source into the first pipeline or the second pipeline, so that the gas flow resistance in the first pipeline and the gas flow resistance in the second pipeline are balanced through the flow resistance regulating device.

Further, in some embodiments of the utility model, the gas source further comprises a gaseous reaction source. The gaseous reaction source is connected with the exhaust channel through a third pipeline and is used for transmitting the reaction gas with unstable early-stage air pressure to the exhaust channel. The gaseous reaction source is connected with the reaction cavity through a fourth pipeline and is used for transmitting the reaction gas with stable air pressure to the reaction cavity. The flow resistance adjusting device is also arranged on the third pipeline and/or the fourth pipeline and is used for balancing the gas flow resistance in the third pipeline and the fourth pipeline so as to eliminate the instantaneous air pressure fluctuation when the third pipeline and the fourth pipeline are switched.

Further, in some embodiments of the present utility model, the reaction chamber includes an atomic layer deposition reaction chamber for performing an atomic layer deposition reaction on the chemical components in the liquid chemical source and the reaction gas to form a thin film on the surface of the semiconductor device.

Further, in some embodiments of the utility model, the first and second conduits have different lengths, calibers, numbers of bends, inner wall roughness, and/or body temperatures.

Drawings

The above features and advantages of the present utility model will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.

Fig. 1 illustrates a schematic structural view of a thin film deposition apparatus provided according to some embodiments of the present utility model.

Fig. 2 illustrates a schematic view of a flow resistance adjustment device provided in accordance with some embodiments of the present utility model.

Fig. 3A-3C illustrate schematic diagrams of vent shapes provided in accordance with some embodiments of the utility model.

Reference numerals

11-13 air sources

20. Reaction cavity

30. Exhaust passage

41-44 gas pipeline

51-52 flow resistance adjusting device

AV 1-AV 8, MV 1-MV 2 valve

511. First fastening structure

512. Shielding part

513. Ventilation part

Detailed Description

Further advantages and effects of the present utility model will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present utility model with specific examples. While the description of the utility model will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the utility model described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the utility model. The following description contains many specific details for the purpose of providing a thorough understanding of the present utility model. The utility model may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the utility model.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the utility model as it is described in terms of the apparatus being manufactured or operated in a particular orientation.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present utility model.

As described above, due to the difference in the parameters such as the length, caliber, number of bends, roughness of the inner wall, temperature of the tube body, etc. of the through-cavity tube and the through-cavity bypass, and the deviation between the theoretical value and the design value of the gas flow resistance, the gas flow resistance in the tube passing through the reaction cavity and the tube passing through the exhaust passage will inevitably have a difference, thereby causing a fluctuation in the gas pressure at the instant of switching the tube rapidly. Fluctuation of gas pressure can in turn further lead to two problems: 1. the granularity caused by the reverse flow of the gas is poor; 2. more process deposition time is required to stabilize the pressure in order to eliminate the pressure fluctuations, resulting in a decrease in productivity.

Referring to fig. 1, fig. 1 illustrates a schematic structure of a thin film deposition apparatus according to some embodiments of the present utility model.

As shown in FIG. 1, the thin film deposition apparatus provided by the present utility model comprises gas sources 11 to 13, a reaction chamber 20, an exhaust passage 30, a first pipeline 41, a second pipeline 42, and flow resistance adjusting devices 51 to 52. Here, sources 11-13 include, but are not limited to, carrier gas source 11, liquid chemical source 12, and gaseous reaction source 13. The reaction chamber 20 includes, but is not limited to, an Atomic Layer Deposition (ALD) reaction chamber for performing an ALD reaction on chemical components in the liquid chemical source 12 and a reaction gas supplied from the gaseous reaction source 13 to form a thin film on the surface of the semiconductor device.

Specifically, in the purging stage before the atomic layer deposition reaction, the carrier gas source 11 is connected to the second pipeline 42 via the valves AV3 and AV4, and is connected to the reaction chamber 20 via the valve AV5 on the second pipeline 42, so as to purge the second pipeline 42 and the reaction chamber 20 with carrier gas, so as to optimize the granularity of the thin film and improve the deposition accuracy of the thin film thickness. Here, at least one of the valves AV1 to AV8 and MV1 to MV2 may be a pneumatic diaphragm valve.

During the atomic layer deposition reaction, valve AV3 is closed. Carrier gas source 11 is connected to liquid chemical source 12 via valves AV1 and MV1, to first and second lines 41 and 42 via valves MV2, AV4 and flow meter G, and to exhaust channel 30 via valve AV6 on first line 41, or to reaction chamber 20 via valve AV5 on second line 42. The carrier gas output from the carrier gas source 11 firstly enters the liquid chemical source 12 to carry out chemical components therein, and then enters the exhaust channel 30 through the first pipeline 41 to exhaust the gas source gas with unstable air pressure in the earlier stage. After that, when the flow meter G indicates that the gas pressure of the gas source gas is stable, the valve AV6 is closed and the valve AV5 is opened, and the carrier gas carrying the chemical components in the liquid chemical source 12 enters the reaction chamber 20 through the second pipe 42 to perform the atomic layer deposition reaction.

At this time, since the first pipeline 41 and the second pipeline 42 have different lengths, calibers, bending numbers, inner wall roughness and/or pipeline temperatures, the gas flow resistances in the pipelines inevitably differ, and thus gas pressure fluctuation is caused at the moment of rapidly switching the first pipeline 41 and the second pipeline 42. For this purpose, the flow resistance adjusting device 51 may be installed at the smaller one of the first and second pipelines 41 and 42 to raise the smaller one to equalize the flow resistance of the gas in the first and second pipelines 41 and 42, thereby eliminating the instantaneous pressure fluctuation of the rapidly switching first and second pipelines 41 and 42.

Please refer to fig. 2 and fig. 3A-3C in combination. Fig. 2 illustrates a schematic view of a flow resistance adjustment device provided in accordance with some embodiments of the present utility model. Fig. 3A-3C illustrate schematic diagrams of vent shapes provided in accordance with some embodiments of the utility model.

In the embodiment shown in fig. 2, the flow resistance adjusting device 51 may be provided with a plurality of first fastening structures 511 for fixedly connecting a plurality of second fastening structures of the inlet end and/or the outlet end of the first pipeline 41 and/or the second pipeline 42, so as to locate the flow resistance adjusting device 51 at the inlet end and/or the outlet end of the first pipeline 41 and/or the second pipeline 42. The gas shielding portion 512 is located on the gas flow path of the first pipe 41 and/or the second pipe 42 to block the gas transmission of the corresponding region. In this way, the first conduit 41 and/or the second conduit 42 convey gas via the ventilation portion 513 of the flow resistance adjustment device 51, the flow resistance of which corresponds to the caliber of the ventilation portion 513.

Here, as shown in fig. 3A to 3C, the shape of the ventilation portion is at least one selected from a circle, a rectangle, and a triangle. By using a hole-type ventilation portion design, the present utility model can effectively promote the stability of the flow resistance adjusting device 51.

In addition, as shown in fig. 1, the gaseous reaction source 13 is connected to the third pipeline 43 and the fourth pipeline 44, and then connected to the exhaust channel 30 via a valve AV8 on the third pipeline 43 or connected to the reaction chamber 20 via a valve AV7 on the fourth pipeline 44. In the process of the atomic layer deposition reaction, the reaction gas output from the gaseous reaction source 13 firstly enters the exhaust channel 30 through the third pipeline 43 to exhaust the reaction gas with unstable pre-gas pressure. Thereafter, the pressure of the reaction gas is stabilized, the valve AV8 is closed and the valve AV7 is opened, and the reaction gas enters the reaction chamber 20 through the fourth pipe 44 to perform the atomic layer deposition reaction in cooperation with the chemical components in the liquid chemical source 12.

At this time, since the third pipeline 43 and the fourth pipeline 44 have different lengths, calibers, bending numbers, inner wall roughness and/or pipe body temperatures, there is also an unavoidable difference in gas flow resistance in the pipelines, and thus gas pressure fluctuation is caused at the instant of rapidly switching the third pipeline 43 and the fourth pipeline 44. Therefore, the flow resistance adjusting device 52 may be installed on the smaller one of the third pipeline 43 or the fourth pipeline 44 to raise the flow resistance of the smaller one to balance the flow resistance of the third pipeline 43 and the fourth pipeline 44, so as to eliminate the instantaneous air pressure fluctuation of the third pipeline 43 and the fourth pipeline 44, and the specific principle is similar to that of the first pipeline 41 and the second pipeline 42, and will not be described herein.

It will be appreciated by those skilled in the art that the example of the flow resistance adjustment means 51, 52 shown in fig. 1, which is provided only for the smaller flow resistance of the gas, is only a non-limiting embodiment provided by the present utility model, and is intended to clearly illustrate the main concept of the present utility model and to provide some embodiments for public implementation without limiting the scope of the present utility model.

Optionally, in other embodiments, the flow resistance adjusting device may be provided to the first and second pipelines 41 and 42, and/or the third and fourth pipelines 43 and 44 at the same time. Specifically, the difference between the first flow resistance of the first flow resistance adjusting device disposed on the first pipeline 41 and the second flow resistance of the second flow resistance adjusting device disposed on the second pipeline 42 may be equal to the difference between the flow resistances of the first pipeline 41 and the second pipeline 42, so as to equalize the flow resistances of the gases in the first pipeline 41 and the second pipeline 42. Similarly, the difference between the third flow resistance of the third flow resistance adjusting device disposed in the third pipeline 43 and the fourth flow resistance of the second flow resistance adjusting device disposed in the fourth pipeline 44 may be equal to the difference between the flow resistances of the third pipeline 43 and the fourth pipeline 44, so as to balance the flow resistances of the gases in the third pipeline 43 and the fourth pipeline 44.

It will be further appreciated by those skilled in the art that the atomic layer deposition reaction chamber 20 and its corresponding atomic layer deposition reaction process shown in fig. 1, which are related to the carrier gas source 11, the liquid chemical source 12 and the gaseous reaction source 13, are also only one non-limiting embodiment provided by the present utility model, and are intended to clearly illustrate the main concept of the present utility model and to provide some specific solutions for public implementation, but are not intended to limit the scope of the present utility model.

Optionally, in other embodiments, for application scenarios of thin film deposition processes involving only any one of the carrier gas source 11, the liquid chemical source 12, and the gaseous reaction source 13, or also involving other gas sources, those skilled in the art may correspondingly adjust the number and types of the gas sources, the ventilation pipes, and the flow resistance adjusting devices to obtain the corresponding effects of balancing the flow resistance of the gas, which will not be described in detail herein.

While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.

The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. The film deposition equipment comprises an air source, a reaction cavity, an exhaust channel, a first pipeline and a second pipeline, wherein the air source is connected with the exhaust channel through the first pipeline and is used for transmitting air source gas with unstable air pressure in the early stage to the exhaust channel, the air source is connected with the reaction cavity through the second pipeline and is used for transmitting air source gas with stable air pressure to the reaction cavity,

the thin film deposition apparatus further comprises a flow resistance adjusting device, which is arranged on the first pipeline and/or the second pipeline and is used for balancing the gas flow resistance in the first pipeline and the second pipeline so as to eliminate the instantaneous air pressure fluctuation when the first pipeline and the second pipeline are switched.

2. The thin film deposition apparatus according to claim 1, wherein the flow resistance adjustment means is provided to a smaller one of the first pipe and the second pipe for elevating the smaller one of the gas flow resistances to equalize the gas flow resistances in the first pipe and the second pipe.

3. The thin film deposition apparatus according to claim 1, wherein a plurality of the flow resistance adjustment devices are provided to the first pipe and the second pipe, respectively, wherein a difference between a first flow resistance of a first flow resistance adjustment device provided to the first pipe and a second flow resistance of a second flow resistance adjustment device provided to the second pipe is equal to a flow resistance difference between the first pipe and the second pipe to equalize gas flow resistances in the first pipe and the second pipe.

4. The thin film deposition apparatus according to claim 1, wherein the flow resistance adjustment device includes a gas shielding portion and a ventilation portion, a flow resistance of which corresponds to a caliber of the ventilation portion, wherein the gas shielding portion is located in a gas flow path of the first pipe and/or the second pipe, and the first pipe and/or the second pipe transmits gas via the ventilation portion of the flow resistance adjustment device.

5. The thin film deposition apparatus as claimed in claim 4, wherein the flow resistance adjusting means is provided at an inlet end and/or an outlet end of the first pipe and/or the second pipe, and a first catching structure is provided thereon to fixedly connect the second catching structure of the inlet end and/or the outlet end.

6. The thin film deposition apparatus according to claim 4, wherein the shape of the ventilation portion is selected from at least one of a circle, a rectangle, and a triangle.

7. The thin film deposition apparatus of claim 1, wherein the gas source comprises a carrier gas source and a liquid chemical source, wherein a carrier gas of the carrier gas source passes through the liquid chemical source first, carrying chemical components in the liquid chemical source into the first line or the second line, to equalize gas flow resistances in the first line and the second line via the flow resistance adjusting device.

8. The thin film deposition apparatus according to claim 7, wherein the gas source further comprises a gaseous reaction source, wherein the gaseous reaction source is connected to the exhaust passage via a third pipe for transmitting an early-stage unstable-gas-pressure reaction gas to the exhaust passage, the gaseous reaction source is connected to the reaction chamber via a fourth pipe for transmitting a gas-pressure-stabilized reaction gas to the reaction chamber, and the flow resistance adjusting means is further provided to the third pipe and/or the fourth pipe for equalizing gas flow resistances in the third pipe and the fourth pipe to eliminate a fluctuation in gas pressure at the moment of switching the third pipe and the fourth pipe.

9. The thin film deposition apparatus of claim 8, wherein the reaction chamber comprises an atomic layer deposition reaction chamber for performing an atomic layer deposition reaction on the chemical components in the liquid chemical source and the reaction gas to form a thin film on the surface of the semiconductor device.

10. The thin film deposition apparatus according to claim 1, wherein the first pipe and the second pipe have different lengths, calibers, numbers of bends, inner wall roughness, and/or pipe body temperatures.