CN219535900U - Power supply circuit of laser driving circuit and laser treatment equipment - Google Patents

Power supply circuit of laser driving circuit and laser treatment equipment Download PDF

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Publication number
CN219535900U
CN219535900U CN202223279009.XU CN202223279009U CN219535900U CN 219535900 U CN219535900 U CN 219535900U CN 202223279009 U CN202223279009 U CN 202223279009U CN 219535900 U CN219535900 U CN 219535900U
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China
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power supply
boost
mos tube
supply chip
capacitor
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CN202223279009.XU
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王启友
黄剑威
吉恩才
戴逸翔
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Suzhou Mill Photon Technology Co ltd
Mill Medical Technology Shenzhen Co ltd
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Suzhou Mill Photon Technology Co ltd
Mill Medical Technology Shenzhen Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The utility model provides a power supply circuit of a laser driving circuit and laser treatment equipment, and relates to the technical field of power supply circuits, wherein the power supply circuit comprises: a main boost module and an auxiliary boost module; the main boost module comprises a main boost power supply chip, a first bootstrap boost unit, a first MOS tube combination, a first boost component and a first current detection unit; the auxiliary boosting module comprises an auxiliary boosting power supply chip, a second bootstrap boosting unit, a second MOS tube combination, a second boosting component and a second current detection unit; the main boost power supply chip is electrically connected with the auxiliary boost power supply chip; the first bootstrap boost unit and the second bootstrap boost unit both comprise capacitors, and the capacity of the capacitors in the first bootstrap boost unit is larger than that of the capacitors in the second bootstrap boost unit. When the dual-boost power supply chip is adopted for superposition power supply, the standby current of the power supply circuit in an idle state is smaller, the power consumption of the circuit is reduced, and the damage to circuit components caused by serious idle heating is avoided.

Description

Power supply circuit of laser driving circuit and laser treatment equipment
Technical Field
The utility model relates to the technical field of power supply circuits, in particular to a power supply circuit of a laser driving circuit and laser treatment equipment.
Background
The power supply circuit of the laser driving circuit is used for supplying power to the laser component, the existing power supply circuit of the laser driving circuit generally adopts a boosting power chip to boost the input power, however, the laser device needs to work under higher working voltage and larger working current under the condition of larger output power, correspondingly, the power supply circuit of the laser driving circuit needs to provide higher power supply voltage, in order to meet the requirement of the laser device for large working current, two boosting power chips can be used in a combined mode, but the two boosting power chips are used in a combined mode, no-load standby current is larger easily, and the serious heating problem is caused by larger power consumption of the power supply circuit.
Disclosure of Invention
Accordingly, the present utility model is directed to a power supply circuit of a laser driving circuit and a laser therapeutic apparatus, which can make the standby current of the power supply circuit in an idle state smaller when the dual boost power supply chip is used for superposition power supply, reduce the circuit power consumption, and avoid damaging circuit components due to serious idle heating.
In order to achieve the above object, the technical scheme adopted by the embodiment of the utility model is as follows:
in a first aspect, an embodiment of the present utility model provides a power supply circuit of a laser driving circuit, including: a main boost module and an auxiliary boost module; the main boost module comprises a main boost power supply chip, a first bootstrap boost unit, a first MOS tube combination, a first boost component and a first current detection unit; the auxiliary boosting module comprises an auxiliary boosting power supply chip, a second bootstrap boosting unit, a second MOS tube combination, a second boosting component and a second current detection unit; the main boost power supply chip is electrically connected with the auxiliary boost power supply chip; the first MOS tube combination comprises a first end, a second end and a control end, the control end of the first MOS tube combination is connected with the output end of the main boost power supply chip, the first bootstrap boost unit is connected between the main boost power supply chip and the first end of the first MOS tube combination, the second end of the first MOS tube combination is electrically connected with the power supply output end, one end of the first boost component is connected with the first end of the first MOS tube combination and the first bootstrap boost unit, the other end of the first boost component is connected with one end of the first current detection unit, and the other end of the first current detection unit is connected with the power supply input end; the second MOS tube combination comprises a first end, a second end and a control end, the control end of the second MOS tube combination is connected with the output end of the auxiliary boost power supply chip, the second bootstrap boost unit is connected between the auxiliary boost power supply chip and the first end of the second MOS tube combination, the second end of the second MOS tube combination is electrically connected with the power supply output end, one end of the second boost component is connected with the first end of the second MOS tube combination and the second bootstrap boost unit, the other end of the second boost component is connected with one end of the second current detection unit, and the other end of the second current detection unit is connected with the power supply input end; the first bootstrap boost unit and the second bootstrap boost unit both comprise capacitors, and the capacity of the capacitors in the first bootstrap boost unit is larger than that of the capacitors in the second bootstrap boost unit.
Further, the power supply circuit further includes: an input filtering module and an output filtering module; one end of the input filter module is connected with the power input end, and the other end of the input filter module is connected with the first current detection unit and the second current detection unit; one end of the output filter module is connected with the power output end, and the other end of the output filter module is connected with the second end of the first MOS tube combination and the second end of the second MOS tube combination.
Further, the power supply circuit further includes: the power input end is electrically connected with the starting control end of the main boost power supply chip and the starting control end of the auxiliary boost power supply chip through the first delay circuit module.
Further, the power supply circuit further includes: the second delay circuit module is connected with the delay starting end of the main boost power supply chip and the delay starting end of the auxiliary boost power supply chip.
Further, the first current detection unit comprises a sampling resistor R11 and a sampling resistor R12 with the same resistance, and the second current detection unit comprises a sampling resistor R21 and a sampling resistor R22 with the same resistance; the resistance value of the sampling resistor R11 is smaller than that of the sampling resistor R21, and R21/R11 is larger than or equal to 1.5, wherein R21 and R11 are the resistance values of the sampling resistor R21 and the sampling resistor R11 respectively.
Further, the first MOS tube combination comprises four MOS tubes Q11-Q14, the second MOS tube combination comprises four MOS tubes Q21-Q24, the first boosting component comprises an inductor L11 and an inductor L12, and the second boosting component comprises an inductor L21 and an inductor L22;
the gates of the MOS tubes Q11-Q14 are electrically connected with the first output end to the fourth output end of the main boost power supply chip in a one-to-one correspondence manner, the main boost power supply chip is used for triggering the alternate conduction of the MOS tube Q11 and the MOS tube Q12, the alternate conduction of the MOS tube Q13 and the MOS tube Q14 and the simultaneous conduction of the MOS tube Q11 and the MOS tube Q14, the drains of the MOS tube Q11 and the MOS tube Q14 are connected with the power supply output end, and the sources of the MOS tube Q12 and the MOS tube Q13 are grounded;
the grids of the MOS tubes Q21-Q24 are electrically connected with the first output end to the fourth output end of the auxiliary boost power supply chip in a one-to-one correspondence manner, the auxiliary boost power supply chip is used for triggering the alternate conduction of the MOS tube Q21 and the MOS tube Q22, the alternate conduction of the MOS tube Q23 and the MOS tube Q24 and the simultaneous conduction of the MOS tube Q21 and the MOS tube Q24, the drains of the MOS tube Q21 and the MOS tube Q24 are connected with the power supply output end, and the sources of the MOS tube Q22 and the MOS tube Q23 are grounded;
one end of the inductor L11 is connected with the source electrode of the MOS transistor Q11, the drain electrode of the MOS transistor Q12 and one end of the first bootstrap boost unit, the other end of the inductor L11 is connected with one end of the sampling resistor R11, the other end of the sampling resistor R11 is connected with the power input end, and one end of the inductor L12 is connected with the drain electrode of the MOS transistor Q13, the source electrode of the MOS transistor Q14 and the other end of the first bootstrap boost unit;
one end of the inductor L21 is connected with the source electrode of the MOS transistor Q21, the drain electrode of the MOS transistor Q22 and one end of the second bootstrap boost unit, the other end of the inductor L21 is connected with one end of the sampling resistor R21, the other end of the sampling resistor R21 is connected with the power input end, and one end of the inductor L22 is connected with the drain electrode of the MOS transistor Q23, the source electrode of the MOS transistor Q24 and the other end of the second bootstrap boost unit.
Further, the first bootstrap boost unit includes: a capacitor C11, a capacitor C12, a zener diode D11, and a zener diode D12, the second bootstrap boost unit includes: a capacitor C21, a capacitor C22, a zener diode D21, and a zener diode D22;
one end of the capacitor C11 is connected with the inductor L11, the source electrode of the MOS transistor Q11, the drain electrode of the MOS transistor Q12 and the main boost power supply chip, the other end of the capacitor C11 is connected with the negative electrode of the zener diode D11 and the main boost power supply chip, the positive electrode of the zener diode D11 is connected with the positive electrode of the zener diode D12 and the main boost power supply chip, the negative electrode of the zener diode D12 is connected with one end of the capacitor C12 and the main boost power supply chip, and the other end of the capacitor C12 is connected with the inductor L12, the drain electrode of the MOS transistor Q13, the source electrode of the MOS transistor Q14 and the main boost power supply chip;
one end of the capacitor C21 is connected with the inductor L21, the source electrode of the MOS tube Q21, the drain electrode of the MOS tube Q22 and the auxiliary boost power supply chip, the other end of the capacitor C21 is connected with the negative electrode of the voltage stabilizing diode D21 and the auxiliary boost power supply chip, the positive electrode of the voltage stabilizing diode D21 is connected with the positive electrode of the voltage stabilizing diode D22 and the auxiliary boost power supply chip, the negative electrode of the voltage stabilizing diode D22 is connected with one end of the capacitor C22 and the auxiliary boost power supply chip, and the other end of the capacitor C22 is connected with the inductor L22, the drain electrode of the MOS tube Q23, the source electrode of the MOS tube Q24 and the auxiliary boost power supply chip.
Further, the capacity of the capacitor C11 is larger than that of the capacitor C21, the capacity of the capacitor C12 is larger than that of the capacitor C22, and C21/C11 is smaller than or equal to 1/3, and C22/C12 is smaller than or equal to 1/3, wherein C21 and C11 are the capacity values of the capacitor C21 and the capacitor C11 respectively, and C22 and C12 are the capacity values of the capacitor C22 and the capacitor C12 respectively.
Further, the pulse output end of the main boost power supply chip is electrically connected with the pulse input end of the auxiliary boost power supply chip, and the main boost power supply chip is used for transmitting pulse signals with 90-degree phase delay to the auxiliary boost power supply chip.
In a second aspect, an embodiment of the present utility model further provides a laser treatment apparatus, including: a laser assembly and a power supply circuit of the laser driving circuit according to any one of the first aspect; and the power output end of the laser driving circuit is electrically connected with the laser component.
The embodiment of the utility model provides a power supply circuit of a laser driving circuit and laser treatment equipment, which are characterized in that a double-boost power supply chip is adopted for superposition power supply, so that the power of the power supply circuit is improved to meet the high-power requirement of a laser device, and the capacitors of a first bootstrap boost unit and a second bootstrap boost unit which are connected with the boost power supply chip in two boost modules are set to be different capacities, and an asymmetric parameter design is adopted for the two bootstrap boost units, so that the current provided by the auxiliary boost power supply chip is reduced when the power supply chip works under low current, the standby current of the power supply circuit in an idle state is smaller, the circuit power consumption is reduced, and the circuit components are prevented from being damaged due to serious idle heating.
Additional features and advantages of embodiments of the utility model will be set forth in the description which follows, or in part will be obvious from the description, or may be learned by practice of the embodiments of the utility model.
In order to make the above objects, features and advantages of the present utility model more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic diagram of a power supply circuit of a laser driving circuit according to an embodiment of the present utility model;
fig. 2 is a schematic diagram showing a power supply circuit structure of another laser driving circuit according to an embodiment of the present utility model;
fig. 3 shows a power circuit diagram of a laser driving circuit according to an embodiment of the present utility model.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the present utility model will be described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments.
In the existing high-power boost power supply chip, 1 chip can only drive a 10A circuit, so that two or more chips are needed to be matched for use for driving more than 10A circuits. However, according to the recommended data design of the boosting power supply chip factory and the test of the DEMO board by the factory, the operation is normal when only a single chip is used, but the problem that the no-load current consumption is large and the heating is serious when 2 chips are used in a combined mode (the no-load input current is about 0.05A when the single chip is used in the no-load mode, and the no-load input current is greater than 3A and the heating is serious after 2 chips are combined).
In addition, the boost power supply chip is started after being electrified, but in practical application, in order to obtain a better filtering effect to reduce ripple waves, a large filtering capacitor is usually used for a high-power supply; the increase of the input filter capacitance can lead the input voltage of the chip to be gradually increased during power supply, and the increase of the output filter capacitance can lead the capacitance resistance of the capacitance to be reduced. When the starting voltage of the chip is not up to the stable power supply voltage value, the chip is started to generate great boosting power consumption, and the output capacitance is large, so that the output capacitance is low, which is equivalent to the fact that a larger load is arranged at the initial stage of starting, the boosting power consumption is increased, and the starting current is much larger than the starting current after the power supply is stable when the chip is electrified; the starting current required by the actual measurement chip to be powered on and started immediately is more than 6A, so that the power supply with slightly smaller power can generate large current due to failure or repeated starting caused by overlarge starting current.
In order to improve the above problems, the embodiment of the present utility model provides a power supply circuit of a laser driving circuit and a laser treatment device, and the embodiment of the present utility model is described in detail below.
The present embodiment provides a power supply circuit of a laser driving circuit, referring to a schematic diagram of a power supply circuit structure of the laser driving circuit shown in fig. 1, the power supply circuit of the laser driving circuit includes: a main boost module 10 and an auxiliary boost module 20.
The main boost module 10 includes a main boost power supply chip U1, a first bootstrap boost unit 101, a first MOS transistor combination 102, a first boost component 103, and a first current detection unit 104.
The auxiliary boost module 20 includes an auxiliary boost power supply chip U2, a second bootstrap boost unit 201, a second MOS transistor combination 202, a second boost component 203, and a second current detection unit 204; the main boost power supply chip U1 is electrically connected with the auxiliary boost power supply chip U2. The bootstrap boost unit may include a capacitor and a diode capable of boosting and the boost component may include a component capable of charging and discharging, such as one or more inductors, and the current detection unit may include one or more sampling resistors.
The first MOS tube combination includes a first end, a second end and a control end, the control end (gate of MOS tube) of the first MOS tube combination 102 is connected to the output end of the main boost power supply chip U1, the first bootstrap boost unit 101 is connected between the main boost power supply chip U1 and the first end of the first MOS tube combination 102, the second end (drain or source of MOS tube) of the first MOS tube combination 102 is electrically connected to the power supply output end VOUT, one end of the first boost unit 101 is connected to the first end (source or drain of MOS tube) of the first MOS tube combination, the other end of the first boost unit 103 is connected to one end of the first current detection unit 104, and the other end of the first current detection unit 104 is connected to the power supply input end.
The second MOS tube combination comprises a first end, a second end and a control end, the control end of the second MOS tube combination 202 is connected with the output end of the auxiliary boost power supply chip U2, the second bootstrap boost unit 201 is connected between the auxiliary boost power supply chip U2 and the first end of the second MOS tube combination 202, the second end (drain electrode or source electrode of the MOS tube) of the second MOS tube combination 202 is electrically connected with the power supply output end VOUT, one end of the second boost component 203 is connected with the first end of the second MOS tube combination 202, the other end of the second boost component 203 is connected with one end of the second current detection unit 204, and the other end of the second current detection unit 204 is connected with the power supply input end VIN;
the first bootstrap-boost unit 101 and the second bootstrap-boost unit 201 each include a capacitance, the capacitance of the capacitance in the first bootstrap-boost unit being larger than the capacitance of the capacitance in the second bootstrap-boost unit.
The first current detection unit 104 and the second current detection unit 204 are configured to sample a supply current input by the power input terminal, and send the sampled current to the main boost power supply chip U1 and the auxiliary boost power supply chip U2 correspondingly, so that the main boost power supply chip U1 controls the on time of the first MOS tube combination 102 according to the magnitude of the sampled current by the first current detection unit 104; the auxiliary boost power supply chip U2 is enabled to control the on time of the first MOS tube combination 102 according to the magnitude of the sampling current by the second current detection unit 204.
According to the power supply circuit of the laser driving circuit, the dual boosting power supply chips are adopted to supply power in a superposition mode, so that the power of the power supply circuit is improved, the high-power requirement of a laser device is met, the capacitors of the first bootstrap boosting unit and the second bootstrap boosting unit which are connected with the boosting power supply chips in the two boosting modules are set to be different capacities, the asymmetric parameter design is adopted for the two bootstrap boosting units, the current provided by the auxiliary boosting power supply chips when the power supply chips work with small current is reduced, the standby current of the power supply circuit in an idle state is smaller, the circuit power consumption is reduced, and the circuit components are prevented from being damaged due to serious idle heating.
In one embodiment, as shown in fig. 1, the power supply circuit provided in this embodiment further includes: an input filtering module 30 and an output filtering module 40. The filtering module may include one or more capacitors.
One end of the input filter module 30 is connected with the power input end VIN, and the other end of the input filter module 30 is connected with the first current detection unit 104 and the second current detection unit 204; one end of the output filter module 40 is connected to the power output terminal VOUT, and the other end of the output filter module 40 is connected to the second end of the first MOS tube combination 102 and the second end of the second MOS tube combination 202.
The power supply is input through the power input end VIN, filtered by the input filtering module to form a direct-current stable voltage, and respectively passed through the first current detection unit 104 and the second current detection unit 204 to respectively supply power to the first boosting component 103 and the second boosting component 203.
In one embodiment, the power input terminal is further connected to the main boost power supply chip U1 and the auxiliary boost power supply chip U2, and provides the working voltage for the main boost power supply chip U1 and the auxiliary boost power supply chip U2. After the main boost power supply chip U1 and the auxiliary boost power supply chip U2 start to work, the first MOS tube combination and the second MOS tube combination are respectively driven to be conducted, the first MOS tube combination and the second MOS tube combination respectively drive the first bootstrap boost unit and the second bootstrap boost unit to boost the working voltage of the MOS tube, the main boost power supply chip U1 and the auxiliary boost power supply chip U2 respectively drive the two groups of MOS tube combination to alternately work and output a boosted power supply, the boosted power supply is filtered by the output filter module and then is output to the power supply output end VOUT, and the power supply output end VOUT supplies power for the laser component.
In one embodiment, in order to avoid the problem that the main boost power supply chip and the auxiliary boost power supply chip cannot be started normally due to large starting current, referring to a power supply circuit schematic diagram of another laser driving circuit shown in fig. 2, the power supply current provided in this embodiment further includes: the power input end VIN of the first delay circuit module 50 is electrically connected to the on control end of the main boost power chip U1 (i.e., the on control pin of the chip U1) and the on control end of the auxiliary boost power chip U2 (i.e., the on control pin of the chip U2) through the first delay circuit module 50.
The power supply current provided in this embodiment further includes: the second delay circuit module 60, the second delay circuit module 60 is connected with the delay starting end (i.e. delay starting pin) of the main boost power chip U1 and the delay starting end (i.e. delay starting pin) of the auxiliary boost power chip U2. After the chip U1 and the chip U2 are powered, the first delay circuit module delays to open the chip, and then the second delay circuit module delays to start the chip U1 and the chip U2 to work, so that the rising speed of the output voltage can be controlled and slowed down by using double delay starting, starting impulse current is effectively restrained, and the problem that the power supply is large in starting power consumption and easy to start failure is solved.
The first delay circuit module may include a delay turn-on component, such as a capacitor. In one embodiment, referring to a power supply circuit diagram of a laser driving circuit shown in fig. 3, a first delay circuit module includes a resistor R1, a resistor R2 and a capacitor C1, the resistor R1 is connected with one ends of a power supply input terminal VIN and the resistor R2 respectively, the other end of the resistor R2 is grounded, the capacitor C1 is connected in parallel with the resistor R2, a node formed between the resistor R1 and the resistor R2 is connected with a pin 9 of a main boost power supply chip U1 and a pin 9 of an auxiliary boost power supply chip U2 respectively, the pin 9 of the main boost power supply chip U1 and the pin 9 of the auxiliary boost power supply chip U2 are open control terminals, and after the voltage is input by the power supply input terminal VIN, the chip U1 and the chip U2 are opened by delay through the first delay circuit module.
The delay starting end of the main boost power supply chip U1 and the delay starting end of the auxiliary boost power supply chip U2 are pins 10, as shown in fig. 3, the second delay circuit module comprises a capacitor C2, one end of the capacitor C2 is connected with the pin 10 of the main boost power supply chip U1 and the pin 10 of the auxiliary boost power supply chip U2, the other end of the capacitor C2 is grounded, and the starting time of the capacitance chip of the capacitor C2 can be delayed by increasing. After the chip U1 and the chip U2 are opened, the chip is started to start working after delay through the second delay circuit module.
The embodiment effectively inhibits the starting impact current by controlling and slowing down the rising speed of the output voltage, and solves the problems of high power consumption, starting failure and the like of the power supply.
In one embodiment, as shown in fig. 3, the pulse output terminal pin 6 of the main boost power supply chip U1 is electrically connected to the pulse input terminal pin 7 of the auxiliary boost power supply chip U2, and the main boost power supply chip is configured to transmit a pulse signal with a phase delay of 90 ° to the auxiliary boost power supply chip, and the main boost power supply chip U1 notifies the auxiliary boost power supply chip U2 of the phase delay of 90 ° through the synchronization circuit and maintains synchronous operation.
As shown in fig. 3, the pin 14 of the main boost power supply chip U1 is connected to the pin 14 of the auxiliary boost power supply chip U2, the pin 14 of the main boost power supply chip U1 is also connected to the resistor R3 and the capacitor C4, the resistor R3 is connected to the capacitor C3, and the capacitor C3 and the capacitor C4 are grounded. The pin 13 of the main boost power supply chip U1 is connected with the resistor R4 and the slide rheostat RV, the other end of the resistor R4 is grounded, and the variable resistance end of the slide rheostat RV is connected with the pin 13 of the auxiliary boost power supply chip U2.
In one embodiment, in order to reduce output power supply voltage ripple, as shown in fig. 3, the first current detection unit provided in this embodiment includes two sampling resistors R11 and R12 with the same resistance, and the second current detection unit includes two sampling resistors R21 and R22 with the same resistance; the resistance value of the sampling resistor R11 is smaller than that of the sampling resistor R21, and R21/R11 is larger than or equal to 1.5, wherein R21 and R11 are the resistance values of the sampling resistor R21 and the sampling resistor R11 respectively.
The resistance of the sampling resistor R21 and the sampling resistor R22 is greater than the resistance of the sampling resistor R11 and the sampling resistor R12, and in one embodiment, the ratio of the resistance of the sampling resistor R21 to the resistance of the sampling resistor R11 is greater than or equal to 1.5, that is, R21/R11 is greater than or equal to 1.5, R22/R12 is greater than or equal to 1.5, R22, R12 is the resistance of the sampling resistors R22 and R12, preferably, R21/R11 is greater than or equal to 2.5, such as the resistance of the sampling resistor R21 and the sampling resistor R22 is 0.1kΩ, and the resistance of the sampling resistor R11 and the sampling resistor R12 is 0.03kΩ. Through setting the sampling resistor in the main boost module and the auxiliary boost module to different resistance values, an asymmetric power supply combination design is used, so that the output power supply voltage ripple is smaller, and the stability of laser output is improved. Because the parameters of the external elements of the chip U1 and the chip U2 are obviously different, the feedback signals of the control objects are captured more accurately in the chip, and the corresponding output control is more stable, so that the output voltage ripple is smaller, and the used control power consumption and current are also in normal values.
As shown in fig. 3, two ends of the sampling resistor R11 are further connected to the pin 2 and the pin 3 of the main boost power supply chip U1, and two ends of the sampling resistor R12 are further connected to the pin 11 and the pin 12 of the main boost power supply chip U1, so that the main boost power supply chip U1 can perform current limiting detection on the sampling resistors R11 and R12, and control the on time of the first MOS transistor combination according to the magnitude of the input current to control the magnitude of the output current of the main boost module.
The two ends of the sampling resistor R21 are respectively connected with the pin 2 and the pin 3 of the auxiliary boost power supply chip U2, the two ends of the sampling resistor R22 are respectively connected with the pin 11 and the pin 12 of the auxiliary boost power supply chip U2, the auxiliary boost power supply chip U2 carries out current limiting detection on the sampling resistor R21 and the sampling resistor R22, and the conduction time of the second MOS tube combination is controlled to control the output current of the auxiliary boost module.
In a specific implementation manner, as shown in fig. 3, the first MOS transistor combination provided in this embodiment includes four MOS transistors Q11 to Q14, the second MOS transistor combination includes four MOS transistors Q21 to Q24, the first boost component includes an inductor L11 and an inductor L12, and the second boost component includes an inductor L21 and an inductor L22.
As shown in fig. 3, the gates of Q11 to Q14 are electrically connected to the first output end to the fourth output end of the main boost power supply chip (i.e., pin 26, pin 24, pin 19 and pin 17 of the chip U1) in a one-to-one correspondence, and the main boost power supply chip U1 is configured to trigger alternate conduction of the MOS transistor Q11 and the MOS transistor Q12, alternate conduction of the MOS transistor Q13 and the MOS transistor Q14, and simultaneous conduction of the MOS transistor Q11 and the MOS transistor Q14, where the drains D of the MOS transistor Q11 and the MOS transistor Q14 are connected to the power supply output end, the sources S of the MOS transistor Q12 and the MOS transistor Q13 are grounded, and the drains D of the MOS transistor Q14 are further connected to the pin 13 of the chip U1 through the resistor R5 and the sliding resistor RV. The main boost power supply chip U1 controls the MOS tube Q11 and the MOS tube Q12 to be alternately conducted so that the MOS tube Q11 outputs boost voltage, and simultaneously controls the MOS tube Q13 and the MOS tube Q14 to be alternately conducted so that the MOS tube Q14 outputs boost voltage, and simultaneously controls the MOS tube Q14 to be conducted when the MOS tube Q11 is controlled to be conducted so that the MOS tube Q11 and the MOS tube Q14 simultaneously output boost voltage.
As shown in fig. 3, the gates of the MOS transistors Q21 to Q24 are electrically connected to the first output end to the fourth output end (pin 26, pin 24, pin 19, and pin 17 of the chip U2) of the auxiliary boost power supply chip U2 in a one-to-one correspondence manner, and the auxiliary boost power supply chip U2 is used for triggering the alternate conduction of the MOS transistor Q21 and the MOS transistor Q22, the alternate conduction of the MOS transistor Q23 and the MOS transistor Q24, and the simultaneous conduction of the MOS transistor Q21 and the MOS transistor Q24, the connection of the drains of the MOS transistor Q21 and the MOS transistor Q24 to the power supply output end, and the grounding of the sources of the MOS transistor Q22 and the MOS transistor Q23. The auxiliary boost power supply chip U2 controls the MOS tube Q21 and the MOS tube Q22 to be alternately conducted so as to enable the MOS tube Q21 to output boost voltage, and simultaneously controls the MOS tube Q23 and the MOS tube Q24 to be alternately conducted so as to enable the MOS tube Q24 to output boost voltage, and controls the MOS tube Q24 to be conducted when the MOS tube Q21 is controlled to be conducted.
One end of an inductor L11 is connected with a drain electrode D of a source electrode S, MOS pipe Q12 of the MOS pipe Q11 and one end of the first bootstrap boosting unit, the other end of the inductor L11 is connected with one end of a sampling resistor R11, the other end of the sampling resistor R11 is connected with a power input end VIN, and one end of the inductor L12 is connected with a source electrode S of a drain electrode D, MOS pipe Q14 of the MOS pipe Q13 and the other end of the first bootstrap boosting unit.
One end of an inductor L21 is connected with the source electrode of the MOS tube Q21, the drain electrode of the MOS tube Q22 and one end of the second bootstrap boosting unit, the other end of the inductor L21 is connected with one end of a sampling resistor R21, the other end of the sampling resistor R21 is connected with the power input end, and one end of the inductor L22 is connected with the drain electrode of the MOS tube Q23, the source electrode of the MOS tube Q24 and the other end of the second bootstrap boosting unit.
In a specific embodiment, as shown in fig. 3, the first bootstrap boost unit includes: the capacitor C11, the capacitor C12, the zener diode D11 and the zener diode D12, and the second bootstrap boosting unit includes: a capacitor C21, a capacitor C22, a zener diode D21, and a zener diode D22.
One end of a capacitor C11 is connected with an inductor L11, a source electrode of a MOS tube Q11, a drain electrode of a MOS tube Q12 and a pin 27 of a main boost power supply chip U1, the other end of the capacitor C11 is connected with a cathode of a zener diode D11 and a pin 25 of the main boost power supply chip U1, an anode of the zener diode D11 is connected with an anode of the zener diode D12 and a pin 20 of the main boost power supply chip, a cathode of the zener diode D12 is connected with one end of the capacitor C12 and a pin 18 of the main boost power supply chip, the other end of the capacitor C12 is connected with the inductor L12, a drain electrode of the MOS tube Q13, a source electrode of the MOS tube Q14 and a pin 16 of the main boost power supply chip, and anodes of the zener diode D11 and the zener diode D12 are also connected with the pin 20 of the chip U1 and the capacitor C13. The circuits formed by the capacitor C11, the capacitor C12, the zener diode D11 and the zener diode D12 respectively conduct bootstrap charge and discharge on the 25 pins and the 18 pins of the main boost power supply chip U1.
One end of a capacitor C21 is connected with an inductor L21, a source electrode of a MOS tube Q21, a drain electrode of a MOS tube Q22 and a pin 27 of an auxiliary boost power supply chip U2, the other end of the capacitor C21 is connected with a cathode of a voltage stabilizing diode D21 and a pin 25 of the auxiliary boost power supply chip U2, an anode of the voltage stabilizing diode D21 is connected with an anode of the voltage stabilizing diode D22 and a pin 20 of the auxiliary boost power supply chip, a cathode of the voltage stabilizing diode D22 is connected with one end of the capacitor C22 and a pin 18 of the auxiliary boost power supply chip, the other end of the capacitor C22 is connected with the inductor L22, a drain electrode of the MOS tube Q23, a source electrode of the MOS tube Q24 and a pin 16 of the auxiliary boost power supply chip, and anodes of the voltage stabilizing diode D21 and the voltage stabilizing diode D22 are also connected with the pin 20 of the chip U2 and the capacitor C23.
In a specific embodiment, the capacitance of the capacitor C11 is greater than the capacitance of the capacitor C21, the capacitance of the capacitor C12 is greater than the capacitance of the capacitor C22, and C21/C11 is less than or equal to 1/3, and C22/C12 is less than or equal to 1/3, wherein C21 and C11 are the capacitance of the capacitor C21 and the capacitance of the capacitor C11, respectively, and C22 and C12 are the capacitance of the capacitor C22 and the capacitance of the capacitor C12, respectively. Preferably, c21/c11.ltoreq.1/7, c22/c12.ltoreq.1/7, such as capacities of c21 and c22 of 0.15uF, and capacities of c11 and c12 of 1uF. The capacity of the capacitor C11 and the capacitor C12 in the first bootstrap boosting unit is larger than that of the capacitor C21 and the capacitor C22 in the second bootstrap boosting unit, so that the conduction degree of the driving MOS tube output by the chip U2 is slightly low, the output current is slightly small, the output current of the double chips and the single chip requirement basically keep consistent when no-load and small current work, after the actual measurement verifies the improved circuit, the no-load input current of the 2 power chips is still kept around 0.06A and does not generate heat after compounding, the energy-saving and cooling effects are obvious, and meanwhile, the output ripple and the working stability are obviously improved.
As shown in fig. 3, pin 28 of the chip U1 is further connected to the power output terminal VIN through an indicator lamp D13 and a resistor R13, so that the indicator lamp D13 indicates the working state of the chip U1; the 28 pins of the chip U2 are also connected with the power output end VIN through the indicator lamp D23 and the resistor R23, so that the indicator lamp D23 indicates the working state of the chip U2.
In a specific implementation manner, the input filter module provided in this embodiment may include a capacitor and an electrolytic capacitor connected in parallel, for convenience of circuit connection, where the input filter module may include a first input filter unit and a second input filter unit, as shown in fig. 3, where the first input filter unit includes a capacitor C14 and an electrolytic capacitor E11 connected in parallel, one end of the capacitor C14 and an anode of the electrolytic capacitor E11 are connected to the power input terminal VIN and sampling resistors R11 and R12, and the other end of the capacitor C14 and a cathode of the electrolytic capacitor E11 are grounded. The second input filter unit comprises a capacitor C24 and an electrolytic capacitor E21, one end of the capacitor C24 and the positive electrode of the electrolytic capacitor E21 are connected with the power input end VIN and sampling resistors R21 and R22, and the other end of the capacitor C24 and the negative electrode of the electrolytic capacitor E21 are grounded.
The output filter module provided in this embodiment may include four output filter units, as shown in fig. 3, where the first output filter unit includes a capacitor C15 and an electrolytic capacitor E12 connected in parallel, and the first output filter unit is connected between the D pole of the MOS transistor Q11 and the power output terminal VOUT; the second output filter unit comprises a capacitor C16 and an electrolytic capacitor E13 which are connected in parallel, and is connected between the D pole of the MOS tube Q14 and the power supply output end VOUT; the third output filter unit comprises a capacitor C25 and an electrolytic capacitor E22 which are connected in parallel, and is connected between the D pole of the MOS tube Q21 and the power supply output end VOUT; the fourth output filter unit comprises a capacitor C26 and an electrolytic capacitor E23 which are connected in parallel, and the fourth output filter unit is connected between the D pole of the MOS tube Q24 and the power supply output end VOUT.
The power supply circuit of the laser driving circuit provided by the embodiment uses an asymmetric current detection parameter combination and an asymmetric bootstrap boost circuit parameter combination design, so that the chip works more stably, the standby current is smaller, the power consumption is saved, meanwhile, the ripple wave of laser output is smaller, and the stability of the laser output is improved; the dual-chip superposition power supply is used, the power of a power supply source is improved, the laser outputs larger power, and the abnormal starting of the power supply chip is avoided by adopting dual-delay starting.
Corresponding to the power supply circuit of the laser driving circuit provided in the above embodiment, the present embodiment provides a laser treatment apparatus including: the laser assembly and the power supply circuit of the laser driving circuit provided by the embodiment; the power output end of the power supply circuit of the laser driving circuit is electrically connected with the laser component, and the power supply circuit of the laser driving circuit is used for outputting a boost power supply to supply power for the laser component.
According to the laser treatment equipment provided by the embodiment, the power supply circuit of the laser driving circuit is adopted, so that laser outputs higher power, and the adaptive operation range of the laser treatment equipment is increased; by using the dual delay starting design of delay starting circuit and power switch circuit delay, the laser treatment equipment is ensured not to work abnormally because the system just starts the system and does not effectively control all parts of the equipment, and the safety of the equipment is ensured and improved.
The device provided in this embodiment has the same implementation principle and technical effects as those of the foregoing embodiment, and for brevity, reference may be made to the corresponding content in the foregoing circuit embodiment where the device embodiment is not mentioned.
In addition, in the description of embodiments of the present utility model, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above examples are only specific embodiments of the present utility model for illustrating the technical solution of the present utility model, but not for limiting the scope of the present utility model, and although the present utility model has been described in detail with reference to the foregoing examples, it will be understood by those skilled in the art that the present utility model is not limited thereto: any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or perform equivalent substitution of some of the technical features, while remaining within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model, and are intended to be included in the scope of the present utility model. Therefore, the protection scope of the utility model is subject to the protection scope of the claims.

Claims (10)

1. A power supply circuit of a laser driving circuit, comprising: a main boost module and an auxiliary boost module;
the main boost module comprises a main boost power supply chip, a first bootstrap boost unit, a first MOS tube combination, a first boost component and a first current detection unit;
the auxiliary boosting module comprises an auxiliary boosting power supply chip, a second bootstrap boosting unit, a second MOS tube combination, a second boosting component and a second current detection unit; the main boost power supply chip is electrically connected with the auxiliary boost power supply chip;
the first MOS tube combination comprises a first end, a second end and a control end, the control end of the first MOS tube combination is connected with the output end of the main boost power supply chip, the first bootstrap boost unit is connected between the main boost power supply chip and the first end of the first MOS tube combination, the second end of the first MOS tube combination is electrically connected with the power supply output end, one end of the first boost component is connected with the first end of the first MOS tube combination and the first bootstrap boost unit, the other end of the first boost component is connected with one end of the first current detection unit, and the other end of the first current detection unit is connected with the power supply input end;
the second MOS tube combination comprises a first end, a second end and a control end, the control end of the second MOS tube combination is connected with the output end of the auxiliary boost power supply chip, the second bootstrap boost unit is connected between the auxiliary boost power supply chip and the first end of the second MOS tube combination, the second end of the second MOS tube combination is electrically connected with the power supply output end, one end of the second boost component is connected with the first end of the second MOS tube combination and the second bootstrap boost unit, the other end of the second boost component is connected with one end of the second current detection unit, and the other end of the second current detection unit is connected with the power supply input end;
the first bootstrap boost unit and the second bootstrap boost unit both comprise capacitors, and the capacity of the capacitors in the first bootstrap boost unit is larger than that of the capacitors in the second bootstrap boost unit.
2. The power supply circuit of a laser driving circuit according to claim 1, further comprising: an input filtering module and an output filtering module;
one end of the input filter module is connected with the power input end, and the other end of the input filter module is connected with the first current detection unit and the second current detection unit;
one end of the output filter module is connected with the power output end, and the other end of the output filter module is connected with the second end of the first MOS tube combination and the second end of the second MOS tube combination.
3. The power supply circuit of claim 1, further comprising: the power input end is electrically connected with the starting control end of the main boost power supply chip and the starting control end of the auxiliary boost power supply chip through the first delay circuit module.
4. The power supply circuit of a laser driving circuit according to claim 3, further comprising: the second delay circuit module is connected with the delay starting end of the main boost power supply chip and the delay starting end of the auxiliary boost power supply chip.
5. The power supply circuit of a laser driving circuit according to claim 1, wherein the first current detection unit includes a sampling resistor R11 and a sampling resistor R12 having the same resistance value, and the second current detection unit includes a sampling resistor R21 and a sampling resistor R22 having the same resistance value; the resistance value of the sampling resistor R11 is smaller than that of the sampling resistor R21, and R21/R11 is larger than or equal to 1.5, wherein R21 and R11 are the resistance values of the sampling resistor R21 and the sampling resistor R11 respectively.
6. The power supply circuit of the laser driving circuit according to claim 5, wherein the first MOS transistor combination includes four MOS transistors Q11 to Q14, the second MOS transistor combination includes four MOS transistors Q21 to Q24, the first boost component includes an inductance L11 and an inductance L12, and the second boost component includes an inductance L21 and an inductance L22;
the gates of the MOS tubes Q11-Q14 are electrically connected with the first output end to the fourth output end of the main boost power supply chip in a one-to-one correspondence manner, the main boost power supply chip is used for triggering the alternate conduction of the MOS tube Q11 and the MOS tube Q12, the alternate conduction of the MOS tube Q13 and the MOS tube Q14 and the simultaneous conduction of the MOS tube Q11 and the MOS tube Q14, the drains of the MOS tube Q11 and the MOS tube Q14 are connected with the power supply output end, and the sources of the MOS tube Q12 and the MOS tube Q13 are grounded;
the grids of the MOS tubes Q21-Q24 are electrically connected with the first output end to the fourth output end of the auxiliary boost power supply chip in a one-to-one correspondence manner, the auxiliary boost power supply chip is used for triggering the alternate conduction of the MOS tube Q21 and the MOS tube Q22, the alternate conduction of the MOS tube Q23 and the MOS tube Q24 and the simultaneous conduction of the MOS tube Q21 and the MOS tube Q24, the drains of the MOS tube Q21 and the MOS tube Q24 are connected with the power supply output end, and the sources of the MOS tube Q22 and the MOS tube Q23 are grounded;
one end of the inductor L11 is connected with the source electrode of the MOS transistor Q11, the drain electrode of the MOS transistor Q12 and one end of the first bootstrap boost unit, the other end of the inductor L11 is connected with one end of the sampling resistor R11, the other end of the sampling resistor R11 is connected with the power input end, and one end of the inductor L12 is connected with the drain electrode of the MOS transistor Q13, the source electrode of the MOS transistor Q14 and the other end of the first bootstrap boost unit;
one end of the inductor L21 is connected with the source electrode of the MOS transistor Q21, the drain electrode of the MOS transistor Q22 and one end of the second bootstrap boost unit, the other end of the inductor L21 is connected with one end of the sampling resistor R21, the other end of the sampling resistor R21 is connected with the power input end, and one end of the inductor L22 is connected with the drain electrode of the MOS transistor Q23, the source electrode of the MOS transistor Q24 and the other end of the second bootstrap boost unit.
7. The power supply circuit of claim 6, wherein the first bootstrap boost unit comprises: a capacitor C11, a capacitor C12, a zener diode D11, and a zener diode D12, the second bootstrap boost unit includes: a capacitor C21, a capacitor C22, a zener diode D21, and a zener diode D22;
one end of the capacitor C11 is connected with the inductor L11, the source electrode of the MOS transistor Q11, the drain electrode of the MOS transistor Q12 and the main boost power supply chip, the other end of the capacitor C11 is connected with the negative electrode of the zener diode D11 and the main boost power supply chip, the positive electrode of the zener diode D11 is connected with the positive electrode of the zener diode D12 and the main boost power supply chip, the negative electrode of the zener diode D12 is connected with one end of the capacitor C12 and the main boost power supply chip, and the other end of the capacitor C12 is connected with the inductor L12, the drain electrode of the MOS transistor Q13, the source electrode of the MOS transistor Q14 and the main boost power supply chip;
one end of the capacitor C21 is connected with the inductor L21, the source electrode of the MOS tube Q21, the drain electrode of the MOS tube Q22 and the auxiliary boost power supply chip, the other end of the capacitor C21 is connected with the negative electrode of the voltage stabilizing diode D21 and the auxiliary boost power supply chip, the positive electrode of the voltage stabilizing diode D21 is connected with the positive electrode of the voltage stabilizing diode D22 and the auxiliary boost power supply chip, the negative electrode of the voltage stabilizing diode D22 is connected with one end of the capacitor C22 and the auxiliary boost power supply chip, and the other end of the capacitor C22 is connected with the inductor L22, the drain electrode of the MOS tube Q23, the source electrode of the MOS tube Q24 and the auxiliary boost power supply chip.
8. The power supply circuit of claim 7, wherein the capacitance of the capacitor C11 is larger than the capacitance of the capacitor C21, the capacitance of the capacitor C12 is larger than the capacitance of the capacitor C22, and C21/C11 is 1/3, C22/C12 is 1/3, wherein C21 and C11 are the capacitance of the capacitor C21 and the capacitor C11, respectively, and C22 and C12 are the capacitance of the capacitor C22 and the capacitor C12, respectively.
9. The power supply circuit of claim 1, wherein a pulse output terminal of the main boost power supply chip is electrically connected to a pulse input terminal of the auxiliary boost power supply chip, and the main boost power supply chip is configured to transmit a pulse signal with a phase delay of 90 ° to the auxiliary boost power supply chip.
10. A laser treatment apparatus, comprising: a laser assembly and a power supply circuit of a laser driving circuit according to any one of claims 1 to 9; and the power output end of the power supply circuit of the laser driving circuit is electrically connected with the laser component.
CN202223279009.XU 2022-12-07 2022-12-07 Power supply circuit of laser driving circuit and laser treatment equipment Active CN219535900U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202223279009.XU CN219535900U (en) 2022-12-07 2022-12-07 Power supply circuit of laser driving circuit and laser treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202223279009.XU CN219535900U (en) 2022-12-07 2022-12-07 Power supply circuit of laser driving circuit and laser treatment equipment

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