CN219385387U - Thermal field of single crystal furnace - Google Patents
Thermal field of single crystal furnace Download PDFInfo
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- CN219385387U CN219385387U CN202320135639.5U CN202320135639U CN219385387U CN 219385387 U CN219385387 U CN 219385387U CN 202320135639 U CN202320135639 U CN 202320135639U CN 219385387 U CN219385387 U CN 219385387U
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- thermal field
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to the field of monocrystalline silicon production, and discloses a thermal field of a monocrystalline furnace. In the utility model, the thermal field of the single crystal furnace comprises: a furnace bottom plate, a furnace bottom big felt, a boss fixed felt, a center small felt, a heat preservation cylinder and an upper cover; the upper surface of the boss solid felt is provided with a first boss, the outer diameter of the first boss is equal to the diameter of the boss solid felt, and the inner diameter of the first boss is larger than the outer diameter of the heat preservation cylinder. The first boss of boss solid felt upper surface can prevent that the silicon liquid from flowing to other parts departments of thermal field bottom when the silicon liquid spills to prevent leaking the loss of silicon damage thermal field part, reduced the loss of cost and loss of part, increase thermal field's life.
Description
Technical Field
The utility model relates to the field of monocrystalline silicon production, in particular to a thermal field of a monocrystalline furnace.
Background
In the semiconductor industry, a large amount of single crystal silicon is required, and pulling single crystal silicon requires a thermal field to provide thermal energy. The quality of the silicon single crystal affects the quality of the final product, so that in order to produce silicon single crystal at low cost and high quality in an industrial production process, a thermal field of a large size is used in producing silicon single crystal, but the thermal field of a large size also brings about higher power consumption correspondingly. Therefore, the heat preservation cylinder and the heat preservation felt are applied to the large-size thermal field to enhance the heat preservation effect of the thermal field of the single crystal furnace, so that the power consumption and the cost are reduced. In the bottom structure of the existing thermal field, a ring felt is placed after a soft felt is paved, a lower heat preservation cylinder is placed on the ring felt, a heat preservation cylinder is placed on the lower heat preservation cylinder, and an upper cover is connected above the heat preservation cylinder.
However, the inventors found that there are at least the following problems in the related art: when the silicon liquid leaks in the heat preservation cylinder, the high-temperature silicon liquid can damage components in the thermal field, so that cost is lost.
Disclosure of Invention
The utility model aims to provide a single crystal furnace thermal field, so that silicon liquid can not damage thermal field components, cost loss caused by silicon leakage is reduced, and quick centering of a heat preservation cylinder is realized, thereby enhancing the heat preservation effect of the thermal field and improving the efficiency of constructing the thermal field.
In order to solve the above technical problems, an embodiment of the present utility model provides a thermal field of a single crystal furnace, including: a furnace bottom plate, a furnace bottom big felt, a boss fixed felt, a center small felt, a heat preservation cylinder and an upper cover; paving the furnace bottom felt above the furnace bottom plate; the boss fixing felt is arranged above the furnace bottom felt; the center small felt is paved above the boss fixed felt; the heat preservation cylinder is arranged on the boss fixing felt; the central felt is positioned in the heat preservation cylinder; the upper part of the heat preservation cylinder is connected with the upper cover; a crucible side and a heater are arranged in the heat preservation cylinder; the upper surface of the boss solid felt is provided with a first boss, the outer diameter of the first boss is equal to the diameter of the boss solid felt, and the inner diameter of the first boss is larger than the outer diameter of the heat preservation cylinder.
Compared with the related art, the single crystal furnace thermal field provided by the embodiment of the utility model has the advantages that the boss fixing felt is arranged in the single crystal furnace thermal field, so that when silicon liquid leaks to the boss fixing felt surface, the first boss on the upper surface of the boss fixing felt can prevent the silicon liquid from flowing to other parts at the bottom of the thermal field, thereby preventing the high Wen Guiye from damaging the thermal field parts, reducing the cost loss and the part loss, and prolonging the service life of the thermal field; and through lay the big felt of stove bottom and boss solid felt in the thermal field bottom, realize the support to the heat preservation section of thick bamboo through the solid felt of boss, when the upper cover that needs to change heat preservation section of thick bamboo top and the distance of the inside heater of single crystal furnace thermal field, can change the distance of upper cover and heater through the quantity that changes the big felt of stove bottom for the single crystal furnace thermal field is at the in-process of operation, and the upper cover is controllable with the distance of the inside heater of thermal field.
Further, a second boss is further arranged on the upper surface of the boss fixing felt; the second boss is concentric with the first boss, and an inner diameter of the first boss is larger than an outer diameter of the second boss. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the first bosses and the second bosses with different diameters are arranged, so that silicon liquid can be blocked by the multi-layer bosses when silicon is leaked, and the overflow prevention of the silicon liquid is effectively realized.
Further, the height of the first boss is greater than the height of the second boss. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the height of the first boss is set to be larger than that of the second boss, so that even if silicon liquid overflows the second boss, the silicon liquid can be blocked by the first boss with higher height, and the overflow prevention of the silicon liquid is effectively realized.
Further, the outer diameter of the second boss is equal to the inner diameter of the heat preservation cylinder. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the outer diameter of the second boss is equal to the inner diameter of the thermal insulation cylinder, so that the thermal insulation cylinder can be positioned and centered quickly in the process of building the thermal field, and the efficiency of building the thermal field is improved.
Further, the thickness ratio of the furnace bottom big felt, the boss fixing felt and the center small felt is as follows: 2:6:10. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the central felts are paved above the boss fixed felts, and when silicon is leaked, the silicon liquid is quickly absorbed through the central felts, so that the component damage and the cost loss caused by the silicon liquid leakage are reduced.
Further, the single crystal furnace thermal field also comprises a protective disc tabletting; the protective disc pressing sheet is arranged above the central felt. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the protective disc pressing sheet is arranged above the central felt, so that when silicon liquid leaks, the silicon liquid can quickly flow into the gas guide cylinder along the protective disc pressing sheet, and the damage of the silicon liquid to other parts of the thermal field is reduced.
Further, the heat-insulating cylinder includes: a lower heat preservation cylinder, a heat preservation cylinder and a heat preservation cylinder connecting ring; the lower heat preservation cylinder is arranged above the boss fixing felt; the heat preservation cylinder is clamped with the lower heat preservation cylinder through the heat preservation cylinder connecting ring. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the middle thermal insulation cylinder and the lower thermal insulation cylinder are connected through the thermal insulation cylinder connecting ring, so that the middle thermal insulation cylinder and the lower thermal insulation cylinder are quickly centered, the thermal insulation effect of the thermal field is enhanced, and the efficiency of building the thermal field is improved.
Further, the surface of the heat preservation cylinder connecting ring is provided with a concave part for clamping the lower heat preservation cylinder and the middle heat preservation cylinder. According to the single crystal furnace thermal field provided by the embodiment of the utility model, the concave part is arranged on the surface of the connecting ring of the heat preservation cylinder, so that the middle heat preservation cylinder and the lower heat preservation cylinder are quickly clamped, and the middle heat preservation cylinder and the lower heat preservation cylinder are quickly centered.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a thermal field of a single crystal furnace according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of boss fixing felt of a thermal field of a single crystal furnace according to an embodiment of the present utility model;
FIG. 3 is a cross-sectional view of a thermal insulation barrel attachment ring for a thermal field of a single crystal furnace according to another embodiment of the present utility model;
FIG. 4 is a schematic view of a thermal insulation barrel connecting ring of a thermal field of a single crystal furnace according to another embodiment of the present utility model.
In the figure: 1-a furnace bottom plate; 2-furnace bottom felt; 3-boss fixing felt; 301-a first boss; 302-a second boss; 3001—first through holes; 3002-second through holes; 4-center felt; 5-protecting disc tabletting; 601-a lower heat preservation cylinder; 602-a middle thermal insulation cylinder; 603-a heat preservation cylinder connecting ring; 7-crucible side; 8-a heater; 9-upper cover.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, embodiments of the present utility model will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present utility model, numerous technical details have been set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the claims of the present application can be realized without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present utility model, and the embodiments can be mutually combined and referred to without contradiction.
It should be noted that, if there is a directional indication (such as up, down, left, right, front, and rear … …) in the embodiment of the present utility model, the directional indication is merely used to explain the relative positional relationship, movement situation, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indication is correspondingly changed.
One embodiment of the present utility model relates to a single crystal furnace thermal field, as shown in FIG. 1.
In this embodiment, the single crystal furnace thermal field includes: 1 of furnace bottom plate, 2 of furnace bottom big felt, 3 of boss fixed felt, 4 of center small felt, a heat preservation cylinder and 9 of upper cover. The structure of the thermal field of the single crystal furnace is paved or placed from bottom to top in sequence: a furnace bottom plate 1, a furnace bottom large felt 2, a boss fixed felt 3, a heat preservation cylinder and an upper cover 9; the thermal field structure in the heat preservation barrel is as follows: a central felt 4, a crucible side 7 and a heater 8. The upper surface of boss solid felt 3 is equipped with first boss 301, and the diameter of the outer diameter of first boss 301 equals with boss solid felt 3, and the inside diameter of first boss 301 is greater than the outside diameter of heat preservation section of thick bamboo. According to the embodiment, the boss fixing felt 3 is arranged in the thermal field of the single crystal furnace, so that the first boss 301 on the upper surface of the boss fixing felt 3 can prevent silicon liquid from flowing to other parts at the bottom of the thermal field when the silicon liquid leaks, thereby preventing the leaking silicon from damaging the parts of the thermal field, reducing the loss of cost and parts, and prolonging the service life of the thermal field.
In some embodiments of the present application, the overall diameter of the boss solid felt 3 is 1580mm, and the boss solid felt 3 body thickness is 85mm. The outer diameter of the first boss 301 is 1580mm; the inner diameter of the first boss 301 is 1490mm; the boss height of the first boss 301 is 20mm. It should be noted that, the diameter and thickness of the boss fixing felt 3 may be adjusted according to the actual production requirement, and the inner diameter, the outer diameter and the height of the first boss 301 on the upper surface of the boss fixing felt 3 may also be adjusted according to the actual production requirement, which is not limited herein.
In some embodiments of the present application, the boss fixing felt 3 is made of a viscose-based graphite soft felt. The viscose-based graphite soft felt has good heat preservation property and higher purity, has longer service life in a thermal field, and can save the cost in the production process. It should be noted that the material of the boss fixing felt 3 may be changed according to the actual production requirement, which is not limited herein.
As shown in fig. 2, in the present embodiment, the upper surface of the boss fixing felt is further provided with a second boss 302; the second boss 302 is concentric with the first boss 301, and the inner diameter of the first boss 301 is larger than the outer diameter of the second boss 302. According to the embodiment, the first bosses and the second bosses with different diameters are arranged, so that silicon liquid can be blocked by the multi-layer bosses when silicon is leaked, and overflow prevention of the silicon liquid is effectively realized.
In this embodiment, the height of the first boss is greater than the height of the second boss 302. In the embodiment, the first boss 301 and the second boss 302 are arranged on the upper surface of the boss fixing felt 3, the height of the first boss 301 is larger than that of the second boss 302, and when silicon liquid leaks to the upper surface of the boss fixing felt 3, the second boss 302 with smaller diameter is used for blocking the silicon liquid, so that the silicon liquid is prevented from flowing out; even if the silicon liquid overflows the second boss 302, the silicon liquid can be blocked by the first boss 301 with a higher height, so that the overflow prevention of the silicon liquid is effectively realized.
In some embodiments of the present application, the outer diameter of the second boss 302 is 1170mm; the second boss 302 has an inner diameter of 1100mm; the height of the second boss 302 is 10mm. It should be noted that, the inner diameter, the outer diameter and the height of the second boss 302 on the upper surface of the boss fixing felt 3 may be adjusted according to the actual production requirement, and only the second boss 302 is required to be concentric with the first boss 301 and the second boss 302 is within the inner diameter of the first boss 301, which is not limited herein.
In this embodiment, the boss fixing felt includes a plurality of fixing felt through holes; a plurality of fixing felt through holes are provided within the inner diameter of the second boss 302 of the boss fixing felt 3. The single crystal furnace thermal field also comprises an air guide cylinder; the air guide cylinder is connected with the fixing felt through hole. In the embodiment, the boss fixing felt 3 is provided with the plurality of through holes, so that the connection of the gas cylinder, the electrode and the boss fixing felt 3 is realized conveniently.
In some embodiments of the present application, the fixing felt through holes include a first through hole 3001 and a second through hole 3002, the first through hole 3001 being used for connection with the gas cylinder above the boss fixing felt 3; the diameter of the first through hole 3001 ranges from 170mm to 165mm. The second through hole 3002 is for connection to an electrode, and the diameter of the second through hole 3002 is in the range of 105mm to 110mm. It should be noted that the sizes of the first through hole 3001 and the second through hole 3002 may be adjusted and set according to actual production requirements, which is not limited herein.
In some embodiments of the present application, the number of first through holes 3001 is 2 to 3; the number of the second through holes 3002 is 4. The first through holes 3001 and the second through holes 3002 are axially or centrally distributed within the inner diameter of the second boss 302. It should be noted that, the number of the first through holes 3001 and the second through holes 3002 and the distribution manner of the through holes on the boss fixing felt 3 may be adjusted and set correspondingly according to actual production requirements, which is not limited herein.
In some examples, the thickness ratio of the hearth large felt, the boss fixing felt 3, and the center small felt 4 may be: 2:6:10. The heat preservation effect is enhanced by paving the furnace bottom felt 2 on the furnace bottom plate 1; and a plurality of layers of center felts 4 are paved above the boss fixed felts 3, and when silicon leaks, the silicon liquid is quickly absorbed through the center felts 4, so that the component damage and the cost loss caused by the silicon liquid leakage are reduced.
In some embodiments of the present application, the number of layers of hearth mat 2 is 3 and the number of layers of center mat 4 is 7. It should be noted that the number of layers and thickness of the hearth felt 2 and the center felt 4 can be adjusted and set according to the actual production requirements, and the method is not limited herein.
In the embodiment, the single crystal furnace thermal field also comprises a protective disc pressing sheet 5; the protective disc pressing sheet 5 is arranged above the central felt 4. According to the embodiment, the protective disc pressing sheet 5 is arranged above the center felt 4, so that when silicon liquid leaks, the silicon liquid can quickly flow into the gas cylinder along the protective disc pressing sheet 5, and damage of the silicon liquid to other parts of a thermal field is reduced.
In some embodiments of the present application, the number of layers of the guard plate tablet 5 may be 1 or 2. It should be noted that the number of layers and thickness of the protective disc pressing sheet 5 can be adjusted and set according to actual production requirements, and the utility model is not limited herein.
Compared with the related art, the single crystal furnace thermal field provided by the embodiment of the utility model has the advantages that the boss fixing felt is arranged in the single crystal furnace thermal field, so that when silicon liquid leaks to the boss fixing felt surface, the first boss on the upper surface of the boss fixing felt can prevent the silicon liquid from flowing to other parts at the bottom of the thermal field, thereby preventing the high Wen Guiye from damaging the thermal field parts, reducing the cost loss and the part loss, and prolonging the service life of the thermal field; and through lay the big felt of stove bottom and boss solid felt in the thermal field bottom, realize the support to the heat preservation section of thick bamboo through the solid felt of boss, when the upper cover that needs to change heat preservation section of thick bamboo top and the distance of the inside heater of single crystal furnace thermal field, can change the distance of upper cover and heater through the quantity that changes the big felt of stove bottom for the single crystal furnace thermal field is at the in-process of operation, and the upper cover is controllable with the distance of the inside heater of thermal field.
Another embodiment of the utility model relates to a single crystal furnace thermal field.
In this embodiment, the single crystal furnace thermal field includes: 1 of furnace bottom plate, 2 of furnace bottom big felt, 3 of boss fixed felt, 4 of center small felt, a heat preservation cylinder and 9 of upper cover. The structure of the thermal field of the single crystal furnace is paved or placed from bottom to top in sequence: a furnace bottom plate 1, a furnace bottom large felt 2, a boss fixed felt 3, a heat preservation cylinder and an upper cover 9; the thermal field structure in the heat preservation barrel is as follows: a central felt 4, a crucible side 7 and a heater 8. The upper surface of boss solid felt 3 is equipped with first boss 301, and the diameter of the outer diameter of first boss 301 equals with boss solid felt 3, and the inside diameter of first boss 301 is greater than the outside diameter of heat preservation section of thick bamboo. According to the embodiment, the boss fixing felt 3 is arranged in the thermal field of the single crystal furnace, so that the first boss 301 on the upper surface of the boss fixing felt 3 can prevent silicon liquid from flowing to other parts at the bottom of the thermal field when the silicon liquid leaks, thereby preventing the leaking silicon from damaging the parts of the thermal field, reducing the loss of cost and parts, and prolonging the service life of the thermal field.
In this embodiment, the upper surface of the boss fixing felt is further provided with a second boss 302; the second boss 302 is concentric with the first boss 301, and the inner diameter of the first boss 301 is larger than the outer diameter of the second boss 302. According to the embodiment, the first bosses and the second bosses with different diameters are arranged, so that silicon liquid can be blocked by the multi-layer bosses when silicon is leaked, and overflow prevention of the silicon liquid is effectively realized.
In this embodiment, the height of the first boss is greater than the height of the second boss 302. In the embodiment, the first boss 301 and the second boss 302 are arranged on the upper surface of the boss fixing felt 3, the height of the first boss 301 is larger than that of the second boss 302, and when silicon liquid leaks to the upper surface of the boss fixing felt 3, the second boss 302 with smaller diameter is used for blocking the silicon liquid, so that the silicon liquid is prevented from flowing out; even if the silicon liquid overflows the second boss 302, the silicon liquid can be blocked by the first boss 301 with a higher height, so that the overflow prevention of the silicon liquid is effectively realized.
In this embodiment, the boss fixing felt includes a plurality of fixing felt through holes; a plurality of fixing felt through holes are provided within the inner diameter of the second boss 302 of the boss fixing felt 3. The single crystal furnace thermal field also comprises an air guide cylinder; the air guide cylinder is connected with the fixing felt through hole. In the embodiment, the boss fixing felt 3 is provided with the plurality of through holes, so that the connection of the gas cylinder, the electrode and the boss fixing felt 3 is realized conveniently.
In some examples, the thickness ratio of the hearth large felt, the boss fixing felt 3, and the center small felt 4 may be: 2:6:10. The heat preservation effect is enhanced by paving the furnace bottom felt 2 on the furnace bottom plate 1; and a plurality of layers of center felts 4 are paved above the boss fixed felts 3, and when silicon leaks, the silicon liquid is quickly absorbed through the center felts 4, so that the component damage and the cost loss caused by the silicon liquid leakage are reduced.
In the embodiment, the single crystal furnace thermal field also comprises a protective disc pressing sheet 5; the protective disc pressing sheet 5 is arranged above the central felt 4. According to the embodiment, the protective disc pressing sheet 5 is arranged above the center felt 4, so that when silicon liquid leaks, the silicon liquid can quickly flow into the gas cylinder along the protective disc pressing sheet 5, and damage of the silicon liquid to other parts of a thermal field is reduced.
In this embodiment, the thermal insulation cylinder includes: a lower insulation cylinder 601, a middle insulation cylinder 602 and an insulation cylinder connecting ring 603; the lower heat preservation cylinder 601 is arranged above the boss fixing felt 3; the middle heat preservation cylinder 602 is clamped with the lower heat preservation cylinder 601 through a heat preservation cylinder connecting ring 603. According to the embodiment, the middle heat preservation cylinder 602 and the lower heat preservation cylinder 601 are connected through the heat preservation cylinder connecting ring 603, so that the middle heat preservation cylinder 602 and the lower heat preservation cylinder 601 are quickly centered, the heat preservation effect of a thermal field is enhanced, and the efficiency of building the thermal field is improved.
As shown in fig. 3 and 4, in the present embodiment, the surface of the insulation cylinder connecting ring is provided with a recess for clamping the lower insulation cylinder 601 and the insulation cylinder 602. In this embodiment, the surface of the insulating cylinder connecting ring 603 is provided with a recess, so that the middle insulating cylinder 602 and the lower insulating cylinder 601 are quickly clamped, and the middle insulating cylinder 602 and the lower insulating cylinder 601 are quickly centered.
In some embodiments of the present application, the recess height of the recess in the surface of the insulating cylinder connecting ring 603 is 5mm and the recess width is 40mm. It should be noted that, the height and width of the recess at the recess of the surface of the connecting ring 603 of the insulating cylinder may be adjusted and set according to the actual production requirement, which is not limited herein.
In this embodiment, the outer diameter of the second boss 302 of the boss fixing felt is equal to the inner diameter of the thermal insulation cylinder. According to the embodiment, the outer diameter of the second boss 302 is equal to the inner diameter of the heat preservation cylinder, so that the heat preservation cylinder can be positioned and centered quickly in the process of building the thermal field, and the efficiency of building the thermal field is improved.
Compared with the related art, the single crystal furnace thermal field provided by the embodiment of the utility model has the advantages that the boss fixing felt is arranged in the single crystal furnace thermal field, so that when silicon liquid leaks to the boss fixing felt surface, the first boss on the upper surface of the boss fixing felt can prevent the silicon liquid from flowing to other parts at the bottom of the thermal field, thereby preventing the high Wen Guiye from damaging the thermal field parts, reducing the cost loss and the part loss, and prolonging the service life of the thermal field; and through lay the big felt of stove bottom and boss solid felt in the thermal field bottom, realize the support to the heat preservation section of thick bamboo through the solid felt of boss, when the upper cover that needs to change heat preservation section of thick bamboo top and the distance of the inside heater of single crystal furnace thermal field, can change the distance of upper cover and heater through the quantity that changes the big felt of stove bottom for the single crystal furnace thermal field is at the in-process of operation, and the upper cover is controllable with the distance of the inside heater of thermal field.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the utility model and that various changes in form and details may be made therein without departing from the spirit and scope of the utility model.
Claims (10)
1. A single crystal furnace thermal field, comprising: a furnace bottom plate, a furnace bottom big felt, a boss fixed felt, a center small felt, a heat preservation cylinder and an upper cover;
paving the furnace bottom felt above the furnace bottom plate; the boss fixing felt is arranged above the furnace bottom felt; the center small felt is paved above the boss fixed felt; the heat preservation cylinder is arranged on the boss fixing felt; the central felt is positioned in the heat preservation cylinder; the upper part of the heat preservation cylinder is connected with the upper cover; a crucible side and a heater are arranged in the heat preservation cylinder;
the upper surface of the boss solid felt is provided with a first boss, the outer diameter of the first boss is equal to the diameter of the boss solid felt, and the inner diameter of the first boss is larger than the outer diameter of the heat preservation cylinder.
2. The thermal field of the single crystal furnace according to claim 1, wherein a second boss is further arranged on the upper surface of the boss fixing felt; the second boss is concentric with the first boss, and an inner diameter of the first boss is larger than an outer diameter of the second boss.
3. The single crystal furnace thermal field of claim 2, wherein the height of the first boss is greater than the height of the second boss.
4. The single crystal furnace thermal field of claim 2, wherein an outer diameter of the second boss is equal to an inner diameter of the insulating cylinder.
5. The single crystal furnace thermal field of claim 2, wherein the boss fixing felt comprises a plurality of fixing felt through holes; the plurality of solid felt through holes are arranged in the second boss inner diameter of the boss solid felt.
6. The single crystal furnace thermal field of claim 5, further comprising a gas cylinder; the air guide cylinder is connected with the felt fixing through hole.
7. The single crystal furnace thermal field of claim 1, wherein the thickness ratio of the hearth mat, the boss fixing mat, and the center mat is: 2:6:10.
8. The single crystal furnace thermal field of claim 1, further comprising a guard disk sheeting; the protective disc pressing sheet is arranged above the central felt.
9. The single crystal growing furnace thermal field of claim 1, wherein the insulating cartridge comprises: a lower heat preservation cylinder, a heat preservation cylinder and a heat preservation cylinder connecting ring; the lower heat preservation cylinder is arranged above the boss fixing felt; the heat preservation cylinder is clamped with the lower heat preservation cylinder through the heat preservation cylinder connecting ring.
10. The thermal field of a single crystal furnace according to claim 9, wherein the surface of the insulating cylinder connecting ring is provided with a recess for clamping the lower insulating cylinder and the middle insulating cylinder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320135639.5U CN219385387U (en) | 2023-02-03 | 2023-02-03 | Thermal field of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320135639.5U CN219385387U (en) | 2023-02-03 | 2023-02-03 | Thermal field of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219385387U true CN219385387U (en) | 2023-07-21 |
Family
ID=87199022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320135639.5U Active CN219385387U (en) | 2023-02-03 | 2023-02-03 | Thermal field of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219385387U (en) |
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2023
- 2023-02-03 CN CN202320135639.5U patent/CN219385387U/en active Active
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