CN206477055U - Modified polycrystalline silicon ingot or purifying furnace - Google Patents
Modified polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN206477055U CN206477055U CN201720193900.1U CN201720193900U CN206477055U CN 206477055 U CN206477055 U CN 206477055U CN 201720193900 U CN201720193900 U CN 201720193900U CN 206477055 U CN206477055 U CN 206477055U
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- crucible
- heater
- silicon ingot
- polycrystalline silicon
- graphite
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Abstract
The utility model discloses a kind of modified polycrystalline silicon ingot or purifying furnace, belong to production of polysilicon equipment technical field, it is unreasonable to solve conventional multi-crystalline silicon ingot furnace structure design, thermal field structure imperfection, the problem of Ingot quality can not be guaranteed.Mainly include body of heater, insulation cage, crucible, crucible guard boards, graphite bottom plate, graphite cover plate, side heater, top heater and air inlet pipe, heat exchange platform, the bottom of crucible is in undaform, and heat exchange mesa base middle position is provided with the triangle cell body of section triangular shape.The utility model causes Ingot quality to increase substantially, and is that enterprise brings considerable economic benefit and social benefit；Improving cost is low, and it is easy to realize, practical, can be extensively using silicon ingot manufacturer.
Description
Technical field
The utility model belongs to production of polysilicon equipment technical field, specifically, more particularly to a kind of modified polycrystalline
Silicon ingot furnace.
Background technology
Central area is mainly made up of silica crucible, graphite cannula, crucible platform in polycrystalline silicon ingot or purifying furnace, and it passes through specific
Thermograde, it is high-purity bulky grain column crystal to make silicon material oriented growth.Because thermal field structure imperfection causes random crystal orientation crystal boundary
The defect such as dislocation field trash and oxide and the complex centre as minority carrier, reduce the life-span of photo-generated carrier, make
Much crystal silicon solar battery efficiency is relatively low.Conventional multi-crystalline silicon ingot furnace bottom heat radiation is uniform so that the isothermal of silicon melt center
Line is sparse, and thermograde is small, and the temperature change of center is slower than edge, and thus generation crystalizing interface is substantially convex, excessive
Curvature interface, it is easy to very high thermal stress is formed in silicon ingot, causes silicon ingot to ftracture, so influence section rate.
In order to probe into influence of a heat structure to polycrystalline silicon ingot casting, substantial amounts of research has been done by many enterprises, than if any enterprise
Industry attempts to reach control Ingot quality purpose by changing the geometric parameters such as silica crucible, graphite plate thickness, some enterprises of enterprise
Figure improves the heterogeneity phantom in body of heater to control environment of crystal growth etc., but this by spray cooling argon gas, mobile heat insulation loop
A little research effects are not obvious, used so being not converted into developmental achievement substantially and putting goods on the market.In sum, conventional multi-crystalline silicon ingot casting
Furnace structure design is unreasonable, and thermal field structure imperfection, Ingot quality can not be guaranteed.
The content of the invention
To solve the above problems, the utility model provides a kind of modified polycrystalline silicon ingot or purifying furnace.
The utility model is achieved through the following technical solutions：
A kind of modified polycrystalline silicon ingot or purifying furnace, it includes body of heater, the aspirating hole being arranged on body of heater, is arranged on the body of heater
Crucible, the crucible shield with exhaust emissions hole are provided with the interior insulation cage with elevating lever, the insulation cage
Plate, graphite bottom plate, graphite cover plate, side heater, top heater and air inlet pipe, the graphite bottom plate are placed on heat exchange
On platform, the crucible is placed on the graphite bottom plate, and the crucible guard boards are arranged on the outside of crucible, the side heater
It is arranged on the outside of the crucible guard boards, the graphite cover plate is arranged on above the crucible, the top heater is arranged on stone
Above inky cap plate, the bottom of the crucible is provided with the stripe shape groove of the curved shape in some sections, and phase in undaform, i.e. its bottom
Adjacent strip groove is without spacing successively matched arrangement；The heat exchange mesa base middle position is provided with section triangular shape
Triangle cell body, the base angle edge of triangle cell body two is separated by spacing and the crucible bottom width is wide, the triangle cell body
Length and the length of the strip groove are isometric, and the heat exchange platform is fixed on the bottom of furnace body through graphite column.
Preferably, the length of the strip groove and the length of the crucible are isometric.
Preferably, the depth of groove of the strip groove is 0.8-1.2mm, and groove diameter is 1.2-2mm.
Preferably, carbon felt is provided between the crucible and crucible guard boards.
Preferably, the crucible is fused silica crucible.
Preferably, the height of the triangle cell body is the 1/4-1/2 of heat exchange podium level.
Preferably, the bottom of furnace body is provided with overflow blanket, and the overflow blanket is four-layer structure, and pin is followed successively by from top to bottom
Knit ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer, the thickness of the knitting ceramic fiber layer
For 10mm, be knitted ceramic fibre blanket layer thickness be 10mm, ceramic fibre blanket layer thickness be 25mm, carbon felt layer thickness be
10mm。
Compared with prior art, the beneficial effects of the utility model are：
The utility model uses strip groove shape crucible and triangular groove body heat switching plane in polycrystalline silicon ingot casting central area
Combining structure pattern, silicon melt crystalizing interface relatively flat, thermoisopleth is flat, uniform, and internal thermoisopleth is intensive, axial temperature ladder
Degree increase, the enhancing of crucible bottom cooling capacity so that polycrystalline silicon columnar is brilliant perpendicular to crystalizing interface growth；Silicon melt convection intensity
Increase, solute boundary layer thickness reduces, and solute can be distributed to the liquid regions of distal end with strong convection, becomes solute Distribution region
Greatly, become uniform, solute Distribution region becomes big, solute boundary layer thickness diminishes, be conducive to hindering crystalizing interface forward position to occur component
Supercooling, further suppresses the generation of crystalizing interface fine grain, so as to obtain macromeritic polysilicon, Ingot quality is increased substantially, and is
Enterprise brings considerable economic benefit and social benefit；The utility model improving cost is low, and it is easy to realize, practical, can be extensive
Using silicon ingot manufacturer.
Brief description of the drawings
Fig. 1 is the utility model structural representation；
Fig. 2 is the utility model interior section schematic enlarged-scale view；
Fig. 3 is the utility model crucible bottom top view.
In figure：1. body of heater；2. aspirating hole；3. elevating lever；4. insulation cage；5. crucible；6. exhaust emissions hole；7. crucible
Backplate；8. graphite bottom plate；9. graphite cover plate；10. side heater；11. top heater；12. air inlet pipe；13. heat exchange is put down
Platform；14. strip groove；15. triangle cell body；16. graphite column；17. overflow blanket.
Embodiment
The utility model is further illustrated below in conjunction with the accompanying drawings：
A kind of modified polycrystalline silicon ingot or purifying furnace, it include body of heater 1, the aspirating hole being arranged on body of heater 12, be arranged on it is described
Crucible 5 is provided with the insulation cage 4 with elevating lever 3 in body of heater 1, the insulation cage 4, with exhaust emissions hole
6 crucible guard boards 7, graphite bottom plate 8, graphite cover plate 9, side heater 10, top heater 11 and air inlet pipe 12, the stone
Black bottom plate 8 is placed on heat exchange platform 13, and the crucible 5 is placed on the graphite bottom plate 8, and the crucible guard boards 7 are set
In the outside of crucible 5, the side heater 10 is arranged on the outside of crucible guard boards 7, and the graphite cover plate 9 is arranged on the earthenware
The top of crucible 5, the top heater 11 is arranged on the top of graphite cover plate 9, and the bottom of the crucible 5 is in undaform, i.e. its bottom
Stripe shape groove 14 provided with the curved shape in some sections, and adjacent bar groove 14 is without spacing successively matched arrangement；The heat is handed over
Change the triangle cell body 15 that the bottom middle position of platform 13 is provided with section triangular shape, 15 liang of base angles of triangle cell body edge
It is separated by spacing and the bottom width of crucible 5 is wide, length of the length of the triangle cell body 15 and the strip groove 14 etc.
Long, the heat exchange platform 13 is fixed on the bottom of body of heater 1 through graphite column 16.
Preferably, the length of the strip groove 14 and the length of the crucible 5 are isometric.
Preferably, the depth of groove of the strip groove 14 is 0.8-1.2mm, and groove diameter is 1.2-2mm.
Preferably, carbon felt is provided between the crucible 5 and crucible guard boards 7.
Preferably, the crucible 5 is fused silica crucible.
Preferably, the height of the triangle cell body 15 is the 1/4-1/2 of the height of heat exchange platform 13.
Preferably, the bottom of body of heater 1 is provided with overflow blanket 17, and the overflow blanket 17 is four-layer structure, from top to bottom according to
Secondary is knitting ceramic fibre blanket layer, knitting ceramic fibre blanket layer, ceramic fibre blanket layer, carbon felt layer, the knitting ceramic fiber layer
Thickness for 10mm, be knitted ceramic fibre blanket layer thickness be 10mm, ceramic fibre blanket layer thickness be 25mm, carbon felt layer
Thickness is 10mm.
The bottom of the utility model crucible 5 is provided with the stripe shape groove of the curved shape in multiple sections in undaform, i.e. its bottom
14, stripe shape groove 14 is paved with the whole bottom of crucible 5, and adjacent bar groove 14 is without spacing successively matched arrangement；Positioned at the earthenware
The bottom middle position of heat exchange platform 13 of the lower section of crucible 5 is provided with the triangle cell body 15 of section triangular shape, the triangular groove
15 liang of base angles of body edge is separated by spacing and the bottom width of crucible 5 is wide, length and the bar shaped of the triangle cell body 15
The length of groove 14 is isometric.The depth of groove of the strip groove 14 is 0.8-1.2mm, and groove diameter is 1.2-2mm, described three
The height of chamfered groove body 15 is the 1/4-1/2 of the height of heat exchange platform 13.
During polysilicon directional freezing, crucible is mainly radiated by the heat exchange platform of bottom, is made in silicon melt
Top-down vertical temperature gradient is formed, this thermograde drives the growth of column crystal.The utility model uses bar shaped
Groove-like crucible and triangular groove body heat switching plane combining structure, thermoisopleth tend to be flat, uniform, and internal thermoisopleth is intensive.This
It is, because of the thermal conductivity of the projecting silica crucible of thermal conductivity of silicon melt in crucible bottom wave pit, to strengthen crucible bottom
Heat exchange, the central temperature change in silicon melt is very fast, thermograde increase.While triangular groove body heat switching plane 13 is therefrom
The heart increases to edge thickness, and the radiating of center is accelerated, and the comprehensive function of the two accelerates radiating effect.As thermograde increases
Greatly, axially inside direction heat flow density increases silicon melt, and high-temperature fusant is filled into low-temperature region with thermal convection current, therefore causes
Thermoisopleth is moved down so that solid liquid interface tends to be flat, heat-exchange capacity enhancing.
The utility model uses strip groove shape crucible and triangular groove body heat switching plane in polycrystalline silicon ingot casting central area
Combining structure pattern, silicon melt crystalizing interface relatively flat, thermoisopleth is flat, uniform, and internal thermoisopleth is intensive, axial temperature ladder
Degree increase, the enhancing of crucible bottom cooling capacity so that polycrystalline silicon columnar is brilliant perpendicular to crystalizing interface growth；Silicon melt convection intensity
Honest, solute boundary layer thickness reduces, and solute can be distributed to the liquid regions of distal end with strong convection, becomes solute Distribution region
Greatly, become uniform, solute Distribution region becomes big, solute boundary layer thickness diminishes, be conducive to hindering crystalizing interface forward position to occur component
Supercooling, further suppresses the generation of crystalizing interface fine grain, so as to obtain macromeritic polysilicon, Ingot quality is increased substantially, and is
Enterprise brings considerable economic benefit and social benefit；The utility model improving cost is low, and it is easy to realize, practical, can be extensive
Using silicon ingot manufacturer.
In summary, preferred embodiment only of the present utility model, not implements for limiting the utility model
Scope, the equivalent change carried out by all shape, construction, feature and spirit according to described in the utility model right is with repairing
Decorations, all should be included in right of the present utility model.
Claims (7)
1. a kind of modified polycrystalline silicon ingot or purifying furnace, it includes body of heater (1), the aspirating hole (2) that is arranged on body of heater (1), be arranged on
The insulation cage (4) with elevating lever (3) in the body of heater (1), be provided with the insulation cage (4) crucible (5),
Crucible guard boards (7), graphite bottom plate (8) with exhaust emissions hole (6), graphite cover plate (9), side heater (10), top add
Hot device (11) and air inlet pipe (12), the graphite bottom plate (8) are placed on heat exchange platform (13), and the crucible (5) is placed
On the graphite bottom plate (8), the crucible guard boards (7) are arranged on the outside of crucible (5), and the side heater (10) is arranged on
On the outside of the crucible guard boards (7), the graphite cover plate (9) is arranged on above the crucible (5), and the top heater (11) sets
Put above graphite cover plate (9), it is characterised in that：The bottom of the crucible (5) is provided with some sections in undaform, i.e. its bottom
The stripe shape groove (14) of curved shape, and adjacent bar groove (14) is without spacing successively matched arrangement；The heat exchange platform
(13) bottom middle position is provided with the triangle cell body (15) of section triangular shape, the base angle edge of triangle cell body (15) two
It is separated by spacing and the crucible (5) bottom width is wide, length and the strip groove (14) of the triangle cell body (15)
Length is isometric, and the heat exchange platform (13) is fixed on the body of heater (1) bottom through graphite column (16).
2. modified polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The length of the strip groove (14)
Length with the crucible (5) is isometric.
3. modified polycrystalline silicon ingot or purifying furnace according to claim 1 or 2, it is characterised in that：The strip groove (14)
Depth of groove is 0.8-1.2mm, and groove diameter is 1.2-2mm.
4. modified polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The crucible (5) and crucible guard boards
(7) carbon felt is provided between.
5. modified polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The crucible (5) is vitreous silica
Crucible.
6. modified polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The height of the triangle cell body (15)
For the 1/4-1/2 of heat exchange platform (13) height.
7. modified polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：Body of heater (1) bottom is provided with
Overflow blanket (17), the overflow blanket (17) is four-layer structure, knitting ceramic fibre blanket layer, knitting ceramics is followed successively by from top to bottom fine
Tie up blanket layer, ceramic fibre blanket layer, carbon felt layer, it is described knitting ceramic fiber layer thickness for 10mm, knitting ceramic fibre blanket layer
Thickness be that 10mm, the thickness of ceramic fibre blanket layer are that 25mm, the thickness of carbon felt layer are 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720193900.1U CN206477055U (en) | 2017-03-01 | 2017-03-01 | Modified polycrystalline silicon ingot or purifying furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720193900.1U CN206477055U (en) | 2017-03-01 | 2017-03-01 | Modified polycrystalline silicon ingot or purifying furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206477055U true CN206477055U (en) | 2017-09-08 |
Family
ID=59746777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720193900.1U Expired - Fee Related CN206477055U (en) | 2017-03-01 | 2017-03-01 | Modified polycrystalline silicon ingot or purifying furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206477055U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016716A (en) * | 2018-01-09 | 2019-07-16 | 上海东洋炭素有限公司 | A kind of polygon polycrystalline silicon ingot casting device |
| CN112064113A (en) * | 2020-10-22 | 2020-12-11 | 新余学院 | Polycrystalline silicon ingot furnace convenient to get rid of impurity layer |
-
2017
- 2017-03-01 CN CN201720193900.1U patent/CN206477055U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016716A (en) * | 2018-01-09 | 2019-07-16 | 上海东洋炭素有限公司 | A kind of polygon polycrystalline silicon ingot casting device |
| CN112064113A (en) * | 2020-10-22 | 2020-12-11 | 新余学院 | Polycrystalline silicon ingot furnace convenient to get rid of impurity layer |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170908 Termination date: 20210301 |
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| CF01 | Termination of patent right due to non-payment of annual fee |