CN219342277U - Chamber mechanism of reaction chamber device, reaction chamber device and PECVD (plasma enhanced chemical vapor deposition) equipment - Google Patents
Chamber mechanism of reaction chamber device, reaction chamber device and PECVD (plasma enhanced chemical vapor deposition) equipment Download PDFInfo
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- CN219342277U CN219342277U CN202320183113.4U CN202320183113U CN219342277U CN 219342277 U CN219342277 U CN 219342277U CN 202320183113 U CN202320183113 U CN 202320183113U CN 219342277 U CN219342277 U CN 219342277U
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- chamber
- chamber body
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 98
- 230000007246 mechanism Effects 0.000 title claims abstract description 51
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 230000009471 action Effects 0.000 claims abstract description 3
- 238000000605 extraction Methods 0.000 claims description 18
- 238000005086 pumping Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 2
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000005192 partition Methods 0.000 description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000005922 Phosphane Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000064 phosphane Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model relates to the technical field of PECVD equipment, and provides a chamber mechanism of a reaction chamber device, the reaction chamber device and the PECVD equipment, which comprise a chamber body, a reaction assembly and a baffle plate; the reaction component is arranged in the chamber body and is coated with a film under the action of process gas; the baffle sets up in the cavity body is inside, and the baffle separates the inside of cavity body into first cavity and second cavity, and reaction unit sets up in first cavity, makes the coating film go on in first cavity. The utility model saves the consumption of the process gas by reducing the volume of the reaction cavity, thereby reducing the waste of the process gas and greatly improving the utilization rate of the process gas compared with the prior art.
Description
Technical Field
The utility model relates to the technical field of PECVD equipment, in particular to a chamber mechanism of a reaction chamber device, the reaction chamber device and the PECVD equipment.
Background
PECVD (Plasma Enhanced Chemical Vapor Deposition ) technology is to ionize process reaction gas by glow discharge under low pressure heating condition to form gas with strong activity in ionic state, and deposit stable solid film on the surface of substrate after a series of chemical reactions, wherein silane (SiH 4 ) Phosphane (PH) 3 ) Laughing gas (N) 2 O), etc. are all commonly used process gases. At present, process gas is generally introduced into a reaction chamber of a PECVD device for coating, and the requirements on the productivity of the device are continuously increased, so that the size requirements of the reaction chamber and reaction components such as a graphite boat arranged in the reaction chamber are also continuously increased, and a large amount of process gas is consumed when coating is performed in the environment of the reaction chamber.
However, due to the increase of the chamber size of the reaction chamber, the uniformity and stability of the flow field are insufficient when the process gas diffuses into the chamber, so that the amount of the process gas to be fed needs to be increased to prevent the thin gas flow in the chamber of the reaction chamber, which results in that the amount of the process gas to be fed is far greater than the amount required by the actual reaction, and waste is caused.
Disclosure of Invention
The utility model provides a chamber mechanism of a reaction chamber device, the reaction chamber device and PECVD equipment, which are used for solving the defect that the feeding amount of process gas is far larger than the amount required by actual reaction in the prior art when coating, thereby causing waste and realizing the improvement of the utilization rate of the process gas in the coating process.
The utility model provides a chamber mechanism of a reaction chamber device, comprising:
a chamber body;
the reaction component is arranged in the chamber body and is used for coating the process gas;
the baffle, set up in inside the cavity body, just the baffle will the inside of cavity body is divided into first cavity and second cavity, the reaction unit set up in the first cavity makes the coating film is in go on in the first cavity.
The utility model also provides a reaction chamber device, which comprises the chamber mechanism of the reaction chamber device.
The reaction chamber device provided by the utility model further comprises an air inlet mechanism and a first air exhaust mechanism which are respectively arranged at two sides of the chamber body, wherein the air inlet mechanism and the first air exhaust mechanism are communicated with the first cavity; the gas inlet mechanism is used for introducing process gas into the first cavity, and the first gas extraction mechanism is used for extracting gas in the first cavity.
According to the present utility model, there is provided a reaction chamber device, the air intake mechanism comprising:
the door plate is arranged at one side of the chamber body;
the guide plate is connected with the door plate, a guide cavity is formed between the guide plate and the door plate, the guide plate is used for blocking one side of the first cavity and one side of the second cavity, a guide hole communicated with the first cavity is formed in the guide plate, and the guide cavity is communicated with the first cavity through the guide hole;
the air inlet flange is arranged on one side of the cavity body, and an air inlet hole communicated with the flow guide cavity is formed in the air inlet flange.
According to the reaction chamber device provided by the utility model, the first air extraction mechanism comprises the air extraction flange arranged at one side of the chamber body, and the air extraction flange is provided with the air extraction holes communicated with the first cavity and the second cavity.
The reaction chamber device provided by the utility model further comprises a second air extraction mechanism arranged on one side of the chamber body, wherein the second air extraction mechanism is used for extracting gas in the second chamber.
According to the reaction chamber device provided by the utility model, the guide plate is provided with a plurality of guide holes.
According to the reaction chamber device provided by the utility model, the reaction chamber device further comprises a heater coated on the outer side of the chamber body.
According to the reaction chamber device provided by the utility model, the first cavity is internally provided with the supporting component, and the reaction component is arranged on the supporting component.
The utility model also provides PECVD equipment, which comprises the reaction chamber device.
According to the chamber mechanism of the reaction chamber device, the reaction chamber device and the PECVD equipment, the interior of the chamber body is divided into the first cavity and the second cavity through the partition plate, and the reaction assembly is arranged in the first cavity, so that the first cavity is used as a reaction cavity for coating, and when the reaction chamber is used, process gas is introduced into the first cavity to perform corresponding process reaction with the reaction assembly.
Drawings
In order to more clearly illustrate the utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a reaction chamber apparatus according to the present utility model;
FIG. 2 is an exploded view of a reaction chamber assembly provided by the present utility model;
FIG. 3 is a side view of a reaction chamber arrangement provided by the present utility model.
Reference numerals:
1: a chamber body; 2: a reaction assembly; 3: a partition plate; 4: a first cavity; 5: a second cavity; 6: a door panel; 7: a deflector; 8: a diversion cavity; 9: a deflector aperture; 10: an air inlet flange; 11: an air inlet hole; 12: an air extraction flange; 13: an air suction hole; 14: a heater; 15: and a support assembly.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The chamber mechanism of the reaction chamber apparatus, the reaction chamber apparatus and the PECVD apparatus of the present utility model are described below with reference to FIGS. 1-3.
The embodiment provides a chamber mechanism of a reaction chamber device, which comprises a chamber body 1, a reaction component 2 and a partition plate 3; wherein:
the reaction module 2 is based on a PECVD process reaction, and the reaction module 2 is fixedly arranged inside the chamber body 1 and is used for coating process gas introduced into the chamber body 1, such as Silane (SiH) 4 ) Phosphane (PH) 3 ) Laughing gas (N) 2 When the film plating is carried out under the action of process gases such as O), the reaction component 2 can be a graphite boat, the process gases are ionized by glow discharge under the condition of low-pressure heating to form the gas with relatively strong activity in ionic state, and a stable solid film is formed on the surface of the substrate by deposition after a series of chemical reactions.
The partition plate 3 may be a structural member embedded in the chamber body 1 separately, or may be fixed in the chamber body 1 by casting or welding in an integrated manner, and may divide the space in the chamber body 1 into the first cavity 4 and the second cavity 5, and the reaction assembly 2 is assembled in the first cavity 4, so that the coating film only occurs in the first cavity 4, that is, the first cavity 4 is a coated reaction cavity, the second cavity 5 is separated by the partition plate 3, and only vacuumized, and when in use, the process gas is introduced into the first cavity 4 to perform a corresponding process reaction with the reaction assembly 2.
Alternatively, the chamber body 1 and the partition plate 3 may be made of quartz material, and are suitable for low-pressure heating ionization conditions in the reaction of the PECVD process.
On the other hand, the present embodiment also provides a reaction chamber device, which includes the chamber mechanism of the reaction chamber device provided by the above embodiment, so that the reaction chamber device provided by the present embodiment has all the advantages of the chamber mechanism of the reaction chamber device provided by the above embodiment.
As an alternative embodiment, the above technical solution may be applied to a reaction chamber device of a tube type PECVD apparatus, and the chamber body 1 is designed as a tube type structure.
In this embodiment, the reaction chamber device further includes an air inlet mechanism and a first air exhaust mechanism respectively disposed at two sides of the chamber body 1, the process gas can be conveyed into the first cavity 4 through the air inlet mechanism, the introduced process gas can perform a process reaction with the reaction component 2 in the first cavity 4, and the gas after the process reaction can be extracted by the first air exhaust mechanism.
Alternatively, the first cavity 4 and the second cavity 5 may share a first air pumping mechanism, and the first cavity 4 and the second cavity 5 may also be separately provided with an air pumping mechanism, that is, the first cavity 4 is provided with the first air pumping mechanism, and the second cavity 5 is provided with the second air pumping mechanism.
Further, when the first cavity 4 and the second cavity 5 share the first air extraction mechanism, the first cavity 4 and the second cavity 5 are in an incomplete isolation state, the air outlet ends of the first cavity 4 and the second cavity 5 are all exhausted by the first air extraction mechanism, and when the first cavity 4 and the second cavity 5 are respectively provided with the first air extraction mechanism and the second air extraction mechanism, the first cavity 4 and the second cavity 5 are in a complete isolation state, namely, the air in the first cavity 4 is exhausted by the first air extraction mechanism, and the air in the second cavity 5 is exhausted by the second air extraction mechanism.
As an alternative embodiment, when the first cavity 4 and the second cavity 5 share the first air extracting mechanism, the first air extracting mechanism may be an air extracting flange 12, where the air extracting flange 12 is assembled on one side of the cavity body 1 far away from the air inlet mechanism, and an air extracting cavity is arranged between the air extracting flange and the first cavity 4 and the second cavity 5, and an air extracting hole 13 communicated with the air extracting cavity is perforated on the air extracting flange 12, and by means of an external air extracting device, the air inside the first cavity 4 and the second cavity 5 can sequentially pass through the air extracting cavity and the air extracting hole 13 and be discharged out of the cavity body 1.
Optionally, a water cooling flange may be further disposed between the air extraction flange 12 and the chamber body 1, for performing a corresponding water cooling operation on the chamber body 1.
In this embodiment, the air intake mechanism includes a door panel 6, a baffle 7, and an air intake flange 10; wherein:
the door plant 6 sets up in the one side of cavity body 1, guide plate 7 is connected with door plant 6, can adopt threaded connection, buckle connection or welding, casting integration's connected mode between the two, have water conservancy diversion chamber 8 between the two, guide plate 7 is last have with the water conservancy diversion hole 9 that water conservancy diversion chamber 8 is linked together, can block up door plant 6 to the one side of cavity body 1 during the use, and make the water conservancy diversion plate 7 with the first cavity 4 and the second cavity 5 of this side totally block up, water conservancy diversion hole 9 corresponds with first cavity 4, then water conservancy diversion chamber 8 is linked together with first cavity 4 through water conservancy diversion hole 9, then the in-process that admits air, process gas can not flow into second cavity 5 from here, to first cavity 4 air feed completely.
The air inlet flange 10 is arranged on one side of the chamber body 1, the door plate 6 and the guide plate 7 connected with the door plate can be arranged in the central area of the air inlet flange 10, the air inlet flange 10 is provided with an air inlet 11 communicated with the guide cavity 8, and process gas can be input through the air inlet 11 through air supply equipment and sequentially enters the first cavity 4 through the guide cavity 8 and the guide hole 9.
As an alternative implementation manner, the deflector 7 is provided with a plurality of deflector holes 9, and the plurality of deflector holes 9 can be uniformly distributed on the deflector 7 to ensure the uniformity of air intake.
Alternatively, the door panel 6 and the baffle 7 associated therewith may be fixedly assembled with the air inlet flange 10, or may be fixed to an external transfer device, such as a mechanical arm, and then moved to the position of the air inlet flange 10 by the transfer device for butt joint.
In this embodiment, the reaction device further includes a heater 14 coated on the outer side of the chamber body 1, and the heater 14 can heat the whole chamber body 1 to promote the heating condition of the plating film.
In this embodiment, a support assembly 15 for supporting the reaction assembly 2 is disposed inside the first chamber 4, and the reaction assembly 2 is disposed on the support assembly 15.
Alternatively, the support assembly 15 may be a pair of ceramic rods, and the reaction assembly 2 may be mounted on the pair of ceramic rods.
In yet another aspect, the present embodiment further provides a PECVD apparatus, including the reaction chamber apparatus provided in the foregoing embodiment, where the reaction chamber apparatus is used as a process reaction part of the PECVD apparatus, so that the PECVD apparatus provided in the present embodiment has all the advantages of the reaction chamber apparatus provided in the foregoing embodiment.
In summary, the chamber mechanism of the reaction chamber device, the reaction chamber device and the PECVD apparatus provided in the embodiments above save the process gas consumption by reducing the volume of the reaction chamber, thereby reducing the waste of the process gas, and greatly improving the utilization rate of the process gas compared with the prior art.
In the description of the embodiments of the present utility model, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments of the present utility model and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present utility model, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present utility model will be understood in detail by those of ordinary skill in the art.
In the description of the present specification, reference to the terms "one embodiment," "first aspect embodiment," "some embodiments," "example," "specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the utility model. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.
Claims (10)
1. A chamber mechanism of a reaction chamber apparatus, comprising:
a chamber body (1);
the reaction component (2) is arranged in the chamber body (1), and the reaction component (2) is coated under the action of process gas;
the separation plate (3) is arranged inside the chamber body (1), the separation plate (3) divides the inside of the chamber body (1) into a first cavity (4) and a second cavity (5), and the reaction component (2) is arranged in the first cavity (4) so that the coating is carried out in the first cavity (4).
2. A reaction chamber arrangement comprising the chamber mechanism of claim 1.
3. The reaction chamber device according to claim 2, further comprising an air inlet mechanism and a first air extraction mechanism respectively arranged at both sides of the chamber body (1), wherein the air inlet mechanism and the first air extraction mechanism are both communicated with the first cavity (4); the gas inlet mechanism is used for introducing process gas into the first cavity (4), and the first gas extraction mechanism is used for extracting gas in the first cavity (4).
4. A reaction chamber arrangement according to claim 3, wherein the air inlet mechanism comprises:
a door plate (6) arranged at one side of the chamber body (1);
the guide plate (7) is connected with the door plate (6), a guide cavity (8) is formed between the guide plate (7) and the door plate (6), the guide plate (7) is used for blocking one side of the first cavity (4) and one side of the second cavity (5), a guide hole (9) communicated with the first cavity (4) is formed in the guide plate (7), and the guide cavity (8) is communicated with the first cavity (4) through the guide hole (9);
the air inlet flange (10) is arranged on one side of the chamber body (1), and an air inlet hole (11) communicated with the flow guide cavity (8) is formed in the air inlet flange (10).
5. A reaction chamber arrangement according to claim 3, characterized in that the first pumping means comprises a pumping flange (12) arranged at one side of the chamber body (1), and that the pumping flange (12) is provided with pumping holes (13) communicating with the first cavity (4) and the second cavity (5).
6. The reaction chamber arrangement according to claim 2, further comprising a second pumping mechanism arranged at one side of the chamber body (1) for pumping gas inside the second cavity (5).
7. The reaction chamber arrangement according to claim 4, characterized in that the baffle plate (7) is provided with a plurality of the baffle holes (9).
8. The reaction chamber arrangement according to any one of claims 2-7, further comprising a heater (14) wrapped outside the chamber body (1).
9. Reaction chamber arrangement according to claim 2, characterized in that a support assembly (15) is provided inside the first cavity (4), the reaction assembly (2) being arranged on the support assembly (15).
10. A PECVD apparatus comprising a reaction chamber arrangement as claimed in any one of claims 2 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320183113.4U CN219342277U (en) | 2023-02-10 | 2023-02-10 | Chamber mechanism of reaction chamber device, reaction chamber device and PECVD (plasma enhanced chemical vapor deposition) equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320183113.4U CN219342277U (en) | 2023-02-10 | 2023-02-10 | Chamber mechanism of reaction chamber device, reaction chamber device and PECVD (plasma enhanced chemical vapor deposition) equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219342277U true CN219342277U (en) | 2023-07-14 |
Family
ID=87104110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320183113.4U Active CN219342277U (en) | 2023-02-10 | 2023-02-10 | Chamber mechanism of reaction chamber device, reaction chamber device and PECVD (plasma enhanced chemical vapor deposition) equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219342277U (en) |
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2023
- 2023-02-10 CN CN202320183113.4U patent/CN219342277U/en active Active
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| GR01 | Patent grant | ||
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Effective date of registration: 20231128 Address after: 412000 South 1st span factory building on the southwest side of the intersection of Qingxia Road and Old Industrial Road, Tongtangwan Street, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou Sany Silicon Energy Technology Co.,Ltd. Address before: 412000 Room 518-50, Building 1, Longxin International, No. 255, Tongxia Road, Tongtangwan Street, Shifeng District, Zhuzhou City, Hunan Province Patentee before: Sany Silicon Energy (Zhuzhou) Co.,Ltd. |
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