CN201525885U - Device of chemical vapor deposition diamond or other materials - Google Patents
Device of chemical vapor deposition diamond or other materials Download PDFInfo
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- CN201525885U CN201525885U CN2009202543331U CN200920254333U CN201525885U CN 201525885 U CN201525885 U CN 201525885U CN 2009202543331 U CN2009202543331 U CN 2009202543331U CN 200920254333 U CN200920254333 U CN 200920254333U CN 201525885 U CN201525885 U CN 201525885U
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- gas
- plasmatorch
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Abstract
The utility model provides a device of chemical vapor deposition diamond or other materials and relates to the technical field of the preparation of functional materials. The device comprises a direct current arc jet plasma torch, a vacuum chamber, a substrate, wherein a gas recycling mechanism is arranged between the vacuum chamber and the plasma torch. Compared with the prior art, the device well resolves the problem of large air consumption existing for a long time in the process of chemical vapor deposition of diamond by utilizing a direct current arc jet method in the prior art, and the device has simple structure and reasonable technology, not only can guarantee the quality of products, but also can greatly save working medium gas, greatly decrease cost, reduce discharge, is in favour of environment protection, and has good economic and social benefits.
Description
Technical field
The utility model belongs to the functional materials preparing technical field.
Background technology
The method of chemical vapour deposition diamond is generally as follows: hydrogen, carbonaceous gas (as methane) etc. by behind the high-temperature activation source, are dissociated into hydrogen atom, carbon atom and various hydrocarbon group.When air-flow ran into the lower substrate of temperature, under the effect of hydrogen atom, carbon atom was deposited as diamond.At present, according to the difference of activation source, utilize chemical vapour deposition to prepare adamantine method and mainly contain three kinds: microwave method, hot wire process and dc arc jet method.The dc arc jet method is celebrated because of its fast growth, good product quality, but its very large gas consumption also always by the people dirt sick.
Summary of the invention
The purpose of this utility model provides the device of a kind of chemical vapour deposition diamond or other material, main purpose is to solve the problem that gas consumption is excessive, cost is high in the dc arc jet forensic chemistry vapor deposition processes of utilizing, it is simple in structure, can not only guarantee the quality of product, and gas usage province, cost is low, reduces discharging, help environmental protection, good in economic efficiency.
Main technical schemes of the present utility model is: the device of a kind of chemical vapour deposition diamond or other material, comprise the dc arc jet plasmatorch, and vacuum chamber, substrate is characterized in that being provided with gas reuse mechanism between vacuum chamber and plasmatorch.
Described vacuum chamber can be enclosed construction, and is provided with the outlet that links to each other with gas reuse mechanism, is provided with topping-up pump in the gas reuse mechanism, and the escape pipe of topping-up pump links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch.
Be convenient control, can be provided with the vacuum chamber pressure variable valve in the described gas reuse mechanism, also can be provided with topping-up pump top hole pressure variable valve and off-gas pump in the vapor pipe of topping-up pump.
Be more convenient, accurate control, described vacuum chamber can be provided with vacuum chamber pressure and measure vacuumometer, and the escape pipe of topping-up pump also can be provided with topping-up pump outlet vacuumometer.
Positively effect of the present utility model is: contrast with prior art, having solved prior art well utilizes the medium-term and long-term gas consumption that exists of dc arc jet forensic chemistry vapor diamond deposition process to reach the high problem of cost greatly, it is simple in structure, technology is reasonable, can not only guarantee the quality of product, and can save the Working medium gas consumption greatly, reduce cost, reduce discharging, help environmental protection, have good economic benefit and social benefit.
Be described further below in conjunction with drawings and Examples, but not as to qualification of the present utility model.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Among Fig. 1,1. dc arc jet plasmatorch, 2. vacuum chamber, 3. substrate, 4. vacuum chamber pressure is measured vacuumometer, 5. vacuum chamber pressure variable valve, 6. topping-up pump, 7. topping-up pump outlet vacuumometer, 8. topping-up pump top hole pressure variable valve, 9. off-gas pump, 10. under meter.
Embodiment
Referring to Fig. 1, the device of this chemical vapour deposition diamond comprises dc arc jet plasmatorch 1, vacuum chamber 2, and substrate 3 is provided with gas reuse mechanism at vacuum chamber 2 and 1 of dc arc jet plasmatorch; Vacuum chamber 2 is an enclosed construction, and is provided with the outlet that links to each other with gas reuse mechanism, and gas reuse mechanism is provided with topping-up pump 6, and the escape pipe of topping-up pump 6 links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch 1; Gas reuse mechanism is provided with vacuum chamber pressure variable valve 5, is provided with topping-up pump top hole pressure variable valve 8 and off-gas pump 9 in the vapor pipe of topping-up pump 6; Vacuum chamber 2 is provided with vacuum chamber pressure and measures vacuumometer 4, and the escape pipe of topping-up pump 6 is provided with topping-up pump outlet vacuumometer 7.
Adopt two lobe pump series connection of ZJ-600, ZJ-150 unit to constitute topping-up pump, select for use 2X-8 type rotary-vane vaccum pump to make off-gas pump, plasmatorch is the heavy caliber magnetic field of development voluntarily and the direct current-arc plasma torch that hydrokinetics jointly controls, produce the polycrystalline diamond thick-film, vacuum chamber pressure 4Kpa, topping-up pump top hole pressure 16Kpa, plasmatorch is stable, the diamond thick-film good quality of product.
Its working process is: dc arc jet forensic chemistry vapor diamond deposition carries out in vacuum chamber, and plasmatorch 1 is installed in the top of vacuum chamber 2, after reactant gases is sent into plasmatorch, is sprayed onto substrate 3 through the electric arc disassociation and generates diamond.In other method and apparatus, the gas that reacted is to extract vacuum chamber out by vacuum pump to drain into atmosphere.And in the utility model, the gas that reacted is after vacuum chamber pressure variable valve 5 is extracted vacuum chamber out by topping-up pump 6, most of and reenter plasmatorch 1 together by under meter 10 initiate process gass and recycle, small part gas drains into atmosphere by off-gas pump 9 behind topping-up pump 9 top hole pressure variable valve 8.Vacuum chamber pressure is installed on the vacuum chamber 2 measures vacuumometer 4, the pressure that topping-up pump outlet vacuumometer 7 is measured this place is respectively installed in the topping-up pump outlet.The aperture that changes variable valve 5 and 8 can be regulated the pressure of vacuum chamber and topping-up pump outlet respectively, the pressure of vacuum chamber generally at the hundreds of handkerchief between thousands of handkerchiefs, the pressure of topping-up pump outlet is generally between several kPas to tens kPas.
Topping-up pump in the system can be in lobe pump, claw pump, the spiral pump a kind of, or the vacuum pump of other kind can be that single pump uses, also a plurality of pumps are united use, use such as the series connection of two-stage lobe pump.Off-gas pump selects kind very extensive, and various vacuum pumps that can discharging directly into atmosphere all can use.Trial effect is fine, the process gas reaction back major part that enters plasmatorch is returned in the square through topping-up pump 6, again utilize, can not only guarantee the quality of product, and the Working medium gas consumption is saved greatly, the system that does not have the gas reclamation set reduces gas usage and can reach 85%, greatly reduces the preparation cost of product.Dc arc jet plasmatorch 1 can be used the dc arc jet plasmatorch of prior art, and also available number of patent application is 200920217261.3 and 200910075519.5 dc arc jet plasmatorch.
Claims (4)
1. the device of a chemical vapour deposition diamond or other material comprises plasmatorch (1), vacuum chamber (2), and substrate (3) is characterized in that being provided with gas reuse mechanism between vacuum chamber (2) and dc arc jet plasmatorch (1).
2. the device of chemical vapour deposition diamond according to claim 1 or other materials, it is characterized in that described vacuum chamber (2) is an enclosed construction, and be provided with the outlet that links to each other with gas reuse mechanism, be provided with topping-up pump (6) in the gas reuse mechanism, the escape pipe of topping-up pump (6) links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch (1).
3. the device of chemical vapour deposition diamond according to claim 2 or other materials, it is characterized in that being provided with vacuum chamber pressure variable valve (5) in the described gas reuse mechanism, be provided with topping-up pump top hole pressure variable valve (8) and off-gas pump (9) in the vapor pipe of topping-up pump (6).
4. the device of chemical vapour deposition diamond according to claim 3 or other material is characterized in that described vacuum chamber (2) is provided with vacuum chamber pressure and measures vacuumometer (4), and the escape pipe of topping-up pump (6) is provided with topping-up pump outlet vacuumometer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202543331U CN201525885U (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202543331U CN201525885U (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201525885U true CN201525885U (en) | 2010-07-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202543331U Expired - Fee Related CN201525885U (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201525885U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101709457B (en) * | 2009-11-05 | 2013-08-28 | 河北普莱斯曼金刚石科技有限公司 | Device of chemical vapor deposition diamond or other substances |
-
2009
- 2009-11-05 CN CN2009202543331U patent/CN201525885U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101709457B (en) * | 2009-11-05 | 2013-08-28 | 河北普莱斯曼金刚石科技有限公司 | Device of chemical vapor deposition diamond or other substances |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100714 Termination date: 20131105 |