CN219304817U - Dynamic driving circuit based on temperature characteristics of power semiconductor - Google Patents
Dynamic driving circuit based on temperature characteristics of power semiconductor Download PDFInfo
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- CN219304817U CN219304817U CN202223458925.XU CN202223458925U CN219304817U CN 219304817 U CN219304817 U CN 219304817U CN 202223458925 U CN202223458925 U CN 202223458925U CN 219304817 U CN219304817 U CN 219304817U
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model provides a dynamic driving circuit based on the temperature characteristic of a power semiconductor, which relates to the technical field of power semiconductor driving and comprises the following components: the signal receiving end of the first turn-off circuit is connected with the first signal output end of the micro control unit; the signal receiving end of the second turn-off circuit is connected with the second signal output end of the micro control unit; the output end of the power semiconductor is connected with the input end of the first turn-off circuit and the input end of the second turn-off circuit, and the input end of the power semiconductor is connected with the output end of the second turn-off circuit; and the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro control unit. The micro-control unit has the beneficial effects that when the temperature of the power semiconductor is larger than the temperature threshold value, the micro-control unit controls the first turn-off circuit and the second turn-off circuit to discharge simultaneously, so that the turn-off speed of the power semiconductor is accelerated, the working efficiency of a product is improved, and the power density of the product is improved.
Description
Technical Field
The utility model relates to the technical field of power semiconductor driving, in particular to a dynamic driving circuit based on the temperature characteristic of a power semiconductor.
Background
In the traditional power semiconductor, an IGBT (InsulatedGateBipolar Transistor ) chip is taken as an example, a fixed driving resistor is adopted in a driving scheme, the electric characteristic of the IGBT and the temperature are not considered to have a strong coupling relation (the turn-off speed of the IGBT chip is in a negative temperature characteristic), the whole turn-off process of the IGBT is slowed down along with the rising of the temperature, di/dt of the IGBT is reduced, the trailing current time of the IGBT is prolonged, the turn-off loss of the IGBT is increased, and the turn-off loss is often limited by the loss and the temperature, so that the device performance cannot be fully exerted.
Disclosure of Invention
Aiming at the problems existing in the prior art, the utility model provides a dynamic driving circuit based on the temperature characteristic of a power semiconductor, which comprises:
the signal receiving end of the first turn-off circuit is connected with the first signal output end of the micro control unit;
the signal receiving end of the second turn-off circuit is connected with the second signal output end of the micro control unit;
the output end of the power semiconductor is connected with the input end of the first turn-off circuit and the input end of the second turn-off circuit, and the input end of the power semiconductor is connected with the output end of the second turn-off circuit;
the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro-control unit, the temperature sampling circuit is used for collecting the temperature of the power semiconductor and sending a temperature sampling signal, and the micro-control unit processes the temperature of the power semiconductor according to the temperature sampling signal.
Preferably, the first shutdown circuit includes:
the upper bridge driving chip is connected with the first signal receiving end of the micro control unit, the upper bridge driving unit is connected with an external power supply, and the upper bridge driving chip is grounded;
one end of the first resistor is connected with a first control end of the upper bridge driving chip;
one end of the second resistor is connected with the second control end of the upper bridge driver chip, and the other end of the second resistor is connected with the other end of the first resistor and is used as the input end of the first turn-off circuit to be connected with the output end of the power semiconductor;
the first signal receiving end of the upper bridge driving chip is used as the signal receiving end of the first turn-off circuit.
Preferably, the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro control unit through the upper bridge driving chip.
Preferably, the temperature sampling circuit includes:
the thermal sampling resistor is arranged on the power semiconductor, one end of the thermal sampling resistor is connected with the first signal receiving end of the upper bridge driving chip and one end of the third resistor, the other end of the thermal sampling resistor is grounded, and the other end of the third resistor is connected with an external power supply;
and the signal output end of the upper bridge driving chip is connected with the signal receiving end of the micro control unit.
One end of the thermosensitive sampling resistor is used as a signal output end of the temperature sampling circuit.
Preferably, the second shutdown circuit includes:
the signal receiving end of the isolation chip is connected with the second signal output end of the micro control unit, and the wiring end of the isolation chip is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with one end of a fifth resistor, the other end of the fifth resistor is connected with the control end of the isolation chip, and the isolation chip is connected with an external power supply;
the grid electrode of the field effect tube is connected with the other end of the third resistor, the drain electrode of the field effect tube is connected with the input end of the first turn-off circuit, the source electrode of the field effect tube is connected with one end of a sixth resistor, and the other end of the sixth resistor is connected with the input end of the power semiconductor and grounded;
the drain electrode of the field effect transistor is used as the input end of the second turn-off circuit, the other end of the sixth resistor is used as the output end of the second turn-off circuit, and the second signal receiving end of the upper bridge driving chip is used as the signal receiving end of the second turn-off circuit.
Preferably, the field effect transistor is an N-channel type field effect transistor.
Preferably, the power semiconductor is an IGBT chip, a G pole of the IGBT is used as an output terminal of the power semiconductor, and an E pole of the IGBT chip is used as an input terminal of the power semiconductor.
Preferably, the IGBT chip includes a gate capacitor, one end of the gate capacitor is connected to a G pole of the IGBT chip, and the other end of the gate capacitor is connected to an E pole of the IGBT chip.
The technical scheme has the following advantages or beneficial effects: the micro control unit obtains the temperature of the power semiconductor based on the temperature sampling signal acquired by the temperature sampling circuit, and when the temperature of the power semiconductor is lower, the micro control unit controls the second turn-off circuit to be turned off and only discharges through the first turn-off circuit; when the temperature of the power semiconductor is higher, the second turn-off circuit is controlled to be turned on, so that the first turn-off circuit and the second turn-off circuit are discharged simultaneously, the turn-off speed of the power semiconductor is accelerated, the working efficiency of a product is improved, and the power density of the product is improved.
Drawings
Fig. 1 is an electrical schematic diagram of a dynamic driving circuit based on a temperature characteristic of a power semiconductor according to a preferred embodiment of the present utility model.
Detailed Description
The utility model will now be described in detail with reference to the drawings and specific examples. The present utility model is not limited to the embodiment, and other embodiments may fall within the scope of the present utility model as long as they conform to the gist of the present utility model.
In accordance with the above-mentioned problems of the prior art, the present utility model provides a dynamic driving circuit based on temperature characteristics of a power semiconductor, as shown in fig. 1, comprising:
the signal receiving end of the first turn-off circuit 1 is connected with the first signal output end of the micro control unit 2;
the signal receiving end of the second turn-off circuit 3 is connected with the second signal output end of the micro control unit 2;
a power semiconductor 4, wherein an output end of the power semiconductor 4 is connected with an input end of the first turn-off circuit 1 and an input end of the second turn-off circuit 3, and an input end of the power semiconductor 4 is connected with an output end of the second turn-off circuit 3;
and the signal output end of the temperature sampling circuit 5 is connected with the signal receiving end of the micro-control unit 2, the temperature sampling circuit 5 is used for collecting the temperature of the power semiconductor 4 and sending a temperature sampling signal, and the micro-control unit 2 obtains the temperature of the power semiconductor 4 according to the temperature sampling signal.
Specifically, in this embodiment, according to the turn-off requirement of the power semiconductor 4, the micro control unit 2 controls the first turn-off circuit 1 to be turned on, and turns off the power semiconductor 4, meanwhile, the micro control unit 2 obtains the temperature of the power semiconductor 4 according to the temperature sampling signal collected by the temperature sampling circuit 5, and when the temperature of the power semiconductor 4 does not exceed the set temperature threshold, the micro control unit controls the second turn-off circuit to be turned off, and only discharges through the first turn-off circuit; when the temperature of the power semiconductor 4 exceeds a set temperature threshold value, the second turn-off circuit 3 is turned on, so that the first turn-off circuit 1 and the second turn-off circuit 3 discharge simultaneously, the turn-off speed of the power semiconductor 4 is increased, the turn-off loss of the power semiconductor 4 is reduced, and the efficiency is improved.
In a preferred embodiment of the present utility model, as shown in fig. 1, the power semiconductor 4 is an IGBT chip, the G pole of the IGBT is used as the output terminal of the power semiconductor 4, and the E pole of the IGBT chip is used as the input terminal of the power semiconductor 4.
In a preferred embodiment of the present utility model, as shown in fig. 1, the IGBT chip includes a gate capacitor C1, one end of the gate capacitor C1 is connected to the G pole of the IGBT chip, and the other end of the gate capacitor C1 is connected to the E pole of the IGBT chip.
In a preferred embodiment of the present utility model, as shown in fig. 1, the first shutdown circuit 1 includes:
the upper bridge driving chip U1, a first signal receiving end of the upper bridge driving chip U1 is connected with a first signal output end of the micro control unit 2, the upper bridge driving chip U1 is connected with an external power supply, and the upper bridge driving chip U1 is grounded;
one end of the first resistor R1 is connected with the first control end of the bridge driving chip U1;
one end of the second resistor R2 is connected with the second control end of the upper bridge driver chip U1, and the other end of the second resistor R2 is connected with the other end of the first resistor R1 and is used as the input end of the first turn-off circuit 1 to be connected with the output end of the power semiconductor 4;
the first signal receiving end of the upper bridge driving chip U1 is used as the signal receiving end of the first turn-off circuit 1.
Specifically, in this embodiment, as shown in fig. 1, the power semiconductor 4 takes an IGBT chip as an example, the micro control unit continuously sends out first control signals with different duty ratios to the upper bridge driving chip U1 according to the turn-off requirement, when the first control signals are at a high level, the first control end of the upper bridge driving chip U1 outputs a high level, the second control end is at a high resistance state, at this time, the first turn-off circuit 1 is turned on, the IGBT chip is turned off by discharging through the second resistor R2, and the charge of the gate capacitor C1 is discharged through the R2 until the gate voltage is lower than the IGBT threshold voltage; when the first control signal is at a low level, the first control end of the upper bridge driving chip U1 is in a high resistance state, the second control end outputs a low level, and at the moment, the first turn-off circuit is turned off.
In a preferred embodiment of the present utility model, as shown in fig. 1, a signal output end of the temperature sampling circuit 5 is connected to a signal receiving end of the micro control unit 2 through an upper bridge driving chip U1.
In a preferred embodiment of the present utility model, as shown in fig. 1, the temperature sampling circuit 5 includes:
the power semiconductor comprises a power semiconductor 4, a thermal sampling resistor NTC, a third resistor R3, a first signal receiving end of an upper bridge driving chip U1, a second signal receiving end of the third resistor R3, a third resistor R3 and an external power supply, wherein the thermal sampling resistor NTC is arranged on the power semiconductor 4;
the signal output end of the upper bridge driving chip U1 is connected with the signal receiving end of the micro control unit 2.
One end of the thermal sampling resistor NTC is used as a signal output end of the temperature sampling circuit 5.
Specifically, in this embodiment, the upper bridge driving chip U1 calculates the resistance value of the thermal sampling resistor NTC according to the current value of the temperature sampling circuit 5, performs temperature calibration fitting according to the resistance value of the thermal sampling resistor NTC to obtain the actual temperature of the power semiconductor 4, and sends the actual temperature to the micro-control unit 2, and when the micro-control unit 2 determines that the actual temperature is greater than the preset temperature threshold, controls the second turn-off circuit 3 to be turned on, where the temperature calibration fitting is in the prior art, which is not the utility model point of the present technical scheme and will not be repeated herein.
In a preferred embodiment of the present utility model, the second shutdown circuit 3 includes:
the signal receiving end of the isolation chip U2 is connected with the second signal output end of the micro control unit 2, and the wiring end of the isolation chip U2 is connected with one end of the fourth resistor R4; the other end of the fourth resistor R4 is connected with one end of a fifth resistor R5, the other end of the fifth resistor R5 is connected with the control end of an isolation chip U2, and the isolation chip U2 is connected with an external power supply;
the gate of the field effect tube T1 is connected with the other end of the third resistor R3, the drain of the field effect tube T1 is connected with the input end of the first turn-off circuit 1, the source of the field effect tube T1 is connected with one end of a sixth resistor R6, and the other end of the sixth resistor R6 is connected with the input end of the power semiconductor 4 and grounded;
the drain electrode of the field effect transistor T1 is used as the input end of the second turn-off circuit 3, the other end of the sixth resistor R6 is used as the output end of the second turn-off circuit 3, and the second signal receiving end of the upper bridge driving chip U1 is used as the signal receiving end of the second turn-off circuit 3.
Specifically, in this embodiment, as shown in fig. 1, in the power semiconductor 4, taking an IGBT chip as an example, the micro control unit 2 continuously sends second control signals with different duty ratios to the second turn-off circuit 3, when the micro control unit 2 detects that the temperature of the IGBT chip is less than the temperature threshold, the second control signal is at a low level, the control end of the isolation chip U2 outputs a low level, the gate of the field effect transistor T1 is pulled down, and at this time, the field effect transistor T1 is turned off, that is, the second turn-off circuit 3 is turned off; when the micro control unit 2 detects that the temperature of the IGBT chip is not less than the temperature threshold value, the second control signal is in a high level, the control end of the isolation chip U2 outputs a high level, the grid electrode of the field effect tube T2 is pulled high, the field effect tube T1 is opened, namely the second turn-off circuit 3 is turned on, at the moment, the gate electrode capacitor C1 of the IGBT chip discharges through the third resistor R3 and the sixth resistor R6 until the gate electrode voltage is lower than the IGBT threshold voltage, at the moment, the equivalent resistor is similar to the parallel connection of the third resistor R3 and the sixth resistor R6, the resistance is reduced, the discharging speed of the power semiconductor 4 is accelerated, the turn-off loss of the power semiconductor 4 is reduced, and the working efficiency is improved.
Specifically, in the preferred embodiment of the present utility model, the micro control unit 2 preferably adopts a TMS320F28335 chip, or a TMS32F28069 chip; the upper bridge driving chip U1 adopts a UCC 2179 chip or a BF1181 chip; the isolation chip U2 adopts an ISO7710FQDRQ1 chip or an NSI8210 chip.
In a preferred embodiment of the present utility model, the fet T1 is an N-channel fet.
The foregoing is merely illustrative of the preferred embodiments of the present utility model and is not intended to limit the embodiments and scope of the present utility model, and it should be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations herein, which should be included in the scope of the present utility model.
Claims (8)
1. A dynamic driving circuit based on a temperature characteristic of a power semiconductor, comprising:
the signal receiving end of the first turn-off circuit is connected with the first signal output end of the micro control unit;
the signal receiving end of the second turn-off circuit is connected with the second signal output end of the micro control unit;
the output end of the power semiconductor is connected with the input end of the first turn-off circuit and the input end of the second turn-off circuit, and the input end of the power semiconductor is connected with the output end of the second turn-off circuit;
the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro-control unit, the temperature sampling circuit is used for collecting the temperature of the power semiconductor and sending a temperature sampling signal, and the micro-control unit processes the temperature of the power semiconductor according to the temperature sampling signal.
2. The dynamic driving circuit of claim 1, wherein the first shutdown circuit comprises:
the upper bridge driving chip is connected with an external power supply, and is grounded;
one end of the first resistor is connected with a first control end of the upper bridge driving chip;
one end of the second resistor is connected with the second control end of the upper bridge driver chip, and the other end of the second resistor is connected with the other end of the first resistor and is used as the input end of the first turn-off circuit to be connected with the output end of the power semiconductor;
the first signal receiving end of the upper bridge driving chip is used as the signal receiving end of the first turn-off circuit.
3. The dynamic driving circuit according to claim 2, wherein the signal output end of the temperature sampling circuit is connected to the signal receiving end of the micro control unit through the upper bridge driving chip.
4. The dynamic driving circuit of claim 2, wherein the temperature sampling circuit comprises:
the thermal sampling resistor is arranged on the power semiconductor, one end of the thermal sampling resistor is connected with the first signal receiving end of the upper bridge driving chip and one end of the third resistor, the other end of the thermal sampling resistor is grounded, and the other end of the third resistor is connected with an external power supply;
the signal output end of the upper bridge driving chip is connected with the signal receiving end of the micro control unit;
one end of the thermosensitive sampling resistor is used as a signal output end of the temperature sampling circuit.
5. The dynamic driving circuit of claim 4, wherein the second shutdown circuit comprises:
the signal receiving end of the isolation chip is connected with the second signal output end of the micro control unit, and the wiring end of the isolation chip is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with one end of a fifth resistor, the other end of the fifth resistor is connected with the control end of the isolation chip, and the isolation chip is connected with an external power supply;
the grid electrode of the field effect tube is connected with the other end of the third resistor, the drain electrode of the field effect tube is connected with the input end of the first turn-off circuit, the source electrode of the field effect tube is connected with one end of a sixth resistor, and the other end of the sixth resistor is connected with the input end of the power semiconductor and grounded;
the drain electrode of the field effect transistor is used as the input end of the second turn-off circuit, the other end of the sixth resistor is used as the output end of the second turn-off circuit, and the second signal receiving end of the upper bridge driving chip is used as the signal receiving end of the second turn-off circuit.
6. The dynamic driving circuit of claim 5, wherein the fet is an N-channel fet.
7. The dynamic driving circuit according to claim 1, wherein the power semiconductor is an IGBT chip, a G-pole of the IGBT is an output terminal of the power semiconductor, and an E-pole of the IGBT chip is an input terminal of the power semiconductor.
8. The dynamic driving circuit of claim 7, wherein the IGBT chip comprises a gate capacitance, one end of the gate capacitance is connected to a G pole of the IGBT chip, and the other end of the gate capacitance is connected to an E pole of the IGBT chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223458925.XU CN219304817U (en) | 2022-12-23 | 2022-12-23 | Dynamic driving circuit based on temperature characteristics of power semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223458925.XU CN219304817U (en) | 2022-12-23 | 2022-12-23 | Dynamic driving circuit based on temperature characteristics of power semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN219304817U true CN219304817U (en) | 2023-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223458925.XU Active CN219304817U (en) | 2022-12-23 | 2022-12-23 | Dynamic driving circuit based on temperature characteristics of power semiconductor |
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| CN (1) | CN219304817U (en) |
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- 2022-12-23 CN CN202223458925.XU patent/CN219304817U/en active Active
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