CN219304817U - Dynamic driving circuit based on temperature characteristics of power semiconductor - Google Patents

Dynamic driving circuit based on temperature characteristics of power semiconductor Download PDF

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CN219304817U
CN219304817U CN202223458925.XU CN202223458925U CN219304817U CN 219304817 U CN219304817 U CN 219304817U CN 202223458925 U CN202223458925 U CN 202223458925U CN 219304817 U CN219304817 U CN 219304817U
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circuit
resistor
power semiconductor
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孙儒文
廖福炜
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Ningbo Centem Automotive Electronics Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The utility model provides a dynamic driving circuit based on the temperature characteristic of a power semiconductor, which relates to the technical field of power semiconductor driving and comprises the following components: the signal receiving end of the first turn-off circuit is connected with the first signal output end of the micro control unit; the signal receiving end of the second turn-off circuit is connected with the second signal output end of the micro control unit; the output end of the power semiconductor is connected with the input end of the first turn-off circuit and the input end of the second turn-off circuit, and the input end of the power semiconductor is connected with the output end of the second turn-off circuit; and the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro control unit. The micro-control unit has the beneficial effects that when the temperature of the power semiconductor is larger than the temperature threshold value, the micro-control unit controls the first turn-off circuit and the second turn-off circuit to discharge simultaneously, so that the turn-off speed of the power semiconductor is accelerated, the working efficiency of a product is improved, and the power density of the product is improved.

Description

一种基于功率半导体温度特性的动态驱动电路A Dynamic Driving Circuit Based on Temperature Characteristics of Power Semiconductors

技术领域technical field

本实用新型涉及功率半导体驱动技术领域,尤其涉及一种基于功率半导体温度特性的动态驱动电路。The utility model relates to the technical field of power semiconductor drive, in particular to a dynamic drive circuit based on the temperature characteristics of the power semiconductor.

背景技术Background technique

传统功率半导体,下面以IGBT(InsulatedGateBipolar Transistor,绝缘栅双极型晶体管)芯片为例,驱动方案中采用固定驱动电阻,并未考虑IGBT的电气特性与温度有较强的耦合关系(IGBT芯片的关断速度呈负温度特性),随着温度升高,IGBT整个关断过程减缓,IGBT的di/dt变小,IGBT拖尾电流时间被延长,导致其关断损耗增加,常常受限于损耗和温度导致未能充分发挥器件性能。For traditional power semiconductors, take the IGBT (Insulated Gate Bipolar Transistor) chip as an example below. The fixed driving resistance is used in the driving scheme, and the strong coupling relationship between the electrical characteristics of the IGBT and the temperature is not considered (the IGBT chip’s close relationship The turn-off speed has a negative temperature characteristic), as the temperature increases, the entire turn-off process of the IGBT slows down, the di/dt of the IGBT becomes smaller, and the tail current time of the IGBT is prolonged, resulting in an increase in turn-off loss, which is often limited by loss and Temperature causes underperformance of the device.

实用新型内容Utility model content

针对现有技术中存在的问题,本实用新型提供一种基于功率半导体温度特性的动态驱动电路,包括:Aiming at the problems existing in the prior art, the utility model provides a dynamic drive circuit based on the temperature characteristics of power semiconductors, including:

第一关断电路,所述第一关断电路的信号接收端连接微控制单元的第一信号输出端;A first shutdown circuit, the signal receiving end of the first shutdown circuit is connected to the first signal output terminal of the micro control unit;

第二关断电路,所述第二关断电路的信号接收端连接所述微控单元的第二信号输出端;a second shutdown circuit, the signal receiving end of the second shutdown circuit is connected to the second signal output terminal of the microcontroller unit;

功率半导体,所述功率半导体的输出端连接所述第一关断电路的输入端和所述第二关断电路的输入端,所述功率半导体的输入端连接所述第二关断电路的输出端;A power semiconductor, the output terminal of the power semiconductor is connected to the input terminal of the first shutdown circuit and the input terminal of the second shutdown circuit, and the input terminal of the power semiconductor is connected to the output of the second shutdown circuit end;

温度采样电路,所述温度采样电路的信号输出端连接所述微控制单元的信号接收端,所述温度采样电路用于采集所述功率半导体的温度并发送温度采样信号,所述微控制单元根据所述温度采样信号处理得到所述功率半导体的温度。A temperature sampling circuit, the signal output end of the temperature sampling circuit is connected to the signal receiving end of the micro control unit, the temperature sampling circuit is used to collect the temperature of the power semiconductor and send a temperature sampling signal, and the micro control unit according to The temperature sampling signal is processed to obtain the temperature of the power semiconductor.

优选的,所述第一关断电路包括:Preferably, the first shutdown circuit includes:

上桥驱动芯片,所述上桥驱动芯片的第一信号接收端连接所述微控制单元的第一信号输出端,所述上桥驱动单元连接外部电源,所述上桥驱动芯片接地;An upper bridge drive chip, the first signal receiving end of the upper bridge drive chip is connected to the first signal output end of the micro control unit, the upper bridge drive unit is connected to an external power supply, and the upper bridge drive chip is grounded;

第一电阻,所述第一电阻的一端连接所述上桥驱动芯片的第一控制端;A first resistor, one end of the first resistor is connected to the first control terminal of the upper bridge driver chip;

第二电阻,所述第二电阻的一端连接所述上桥驱芯片的第二控制端,所述第二电阻的另一端连接所述第一电阻的另一端并作为所述第一关断电路的输入端连接所述功率半导体的输出端;A second resistor, one end of the second resistor is connected to the second control end of the upper bridge drive chip, the other end of the second resistor is connected to the other end of the first resistor and serves as the first shutdown circuit The input terminal is connected to the output terminal of the power semiconductor;

所述上桥驱动芯片的第一信号接收端作为所述第一关断电路的信号接收端。The first signal receiving end of the upper bridge driver chip is used as the signal receiving end of the first turn-off circuit.

优选的,所述温度采样电路的信号输出端通过所述上桥驱动芯片连接所述微控制单元的信号接收端。Preferably, the signal output terminal of the temperature sampling circuit is connected to the signal receiving terminal of the micro control unit through the upper bridge driver chip.

优选的,所述温度采样电路包括:Preferably, the temperature sampling circuit includes:

热敏采样电阻,所述热敏采样电阻设置于所述功率半导体上,所述热敏采样电阻的一端连接所述上桥驱动芯片的第一信号接收端和第三电阻的一端,所述热敏采样电阻的另一端接地,所述第三电阻的另一端连接外部电源;A thermosensitive sampling resistor, the thermosensitive sampling resistor is arranged on the power semiconductor, one end of the thermosensitive sampling resistor is connected to the first signal receiving end of the upper bridge driver chip and one end of the third resistor, the thermosensitive sampling resistor The other end of the sensitive sampling resistor is grounded, and the other end of the third resistor is connected to an external power supply;

所述上桥驱动芯片的信号输出端连接所述微控制单元的信号接收端。The signal output end of the upper bridge driver chip is connected to the signal receiving end of the micro control unit.

所述热敏采样电阻一端作为所述温度采样电路的信号输出端。One end of the thermistor sampling resistor is used as a signal output end of the temperature sampling circuit.

优选的,所述第二关断电路包括:Preferably, the second shutdown circuit includes:

隔离芯片,所述隔离芯片的信号接收端连接所述微控制单元的第二信号输出端,所述隔离芯片的接线端连接第四电阻的一端;所述第四电阻的另一端连接第五电阻的一端,所述第五电阻的另一端连接所述隔离芯片的控制端,所述隔离芯片连接外部电源;An isolation chip, the signal receiving end of the isolation chip is connected to the second signal output end of the micro control unit, the connection end of the isolation chip is connected to one end of the fourth resistor; the other end of the fourth resistor is connected to the fifth resistor One end of the fifth resistor, the other end of the fifth resistor is connected to the control terminal of the isolation chip, and the isolation chip is connected to an external power supply;

场效应管,所述场效应管的栅极连接所述第三电阻的另一端,所述场效应管的漏极连接所述第一关断电路的输入端,所述场效应管的源极连接第六电阻的一端,所述第六电阻的另一端连接所述功率半导体的输入端并接地;A field effect transistor, the gate of the field effect transistor is connected to the other end of the third resistor, the drain of the field effect transistor is connected to the input end of the first shutdown circuit, and the source of the field effect transistor Connect one end of the sixth resistor, the other end of the sixth resistor is connected to the input end of the power semiconductor and grounded;

所述场效应管的漏极作为所述第二关断电路的输入端,所述第六电阻的另一端作为所述第二关断电路的输出端,所述上桥驱动芯片的第二信号接收端作为所述第二关断电路的信号接收端。The drain of the field effect transistor is used as the input terminal of the second shutdown circuit, the other end of the sixth resistor is used as the output terminal of the second shutdown circuit, and the second signal of the upper bridge driver chip is The receiving end serves as a signal receiving end of the second shutdown circuit.

优选的,所述场效应管为N沟道型场效应管。Preferably, the field effect transistor is an N-channel field effect transistor.

优选的,所述功率半导体为IGBT芯片,所述IGBT的G极作为所述功率半导体的输出端,所述IGBT芯片的E极作为所述功率半导体的输入端。Preferably, the power semiconductor is an IGBT chip, the G pole of the IGBT serves as the output terminal of the power semiconductor, and the E pole of the IGBT chip serves as the input terminal of the power semiconductor.

优选的,所述IGBT芯片包括门极电容,所述门极电容的一端连接所述IGBT芯片的G极,所述门极电容的另一端连接所述IGBT芯片的E极。Preferably, the IGBT chip includes a gate capacitor, one end of the gate capacitor is connected to the G pole of the IGBT chip, and the other end of the gate capacitor is connected to the E pole of the IGBT chip.

上述技术方案具有如下优点或有益效果:微控制单元基于温度采样电路采集的温度采样信号得到功率半导体的温度,当功率半导体的温度较低时,微控制单元控制第二关断电路关断,只通过第一关断电路放电;当功率半导体的温度较高时控制第二关断电路导通,实现第一关断电路和第二关断电路同时放电,加快功率半导体的关断速度,提高产品的工作效率,提升产品功率密度。The above technical solution has the following advantages or beneficial effects: the micro-control unit obtains the temperature of the power semiconductor based on the temperature sampling signal collected by the temperature sampling circuit; Discharge through the first shut-off circuit; when the temperature of the power semiconductor is high, the second shut-off circuit is controlled to conduct, so that the first shut-off circuit and the second shut-off circuit are discharged at the same time, which speeds up the shut-off speed of the power semiconductor and improves the product quality. High work efficiency, improve product power density.

附图说明Description of drawings

图1为本实用新型的较佳的实施例中,一种基于功率半导体温度特性的动态驱动电路的电气原理图。FIG. 1 is an electrical schematic diagram of a dynamic drive circuit based on the temperature characteristics of power semiconductors in a preferred embodiment of the present invention.

具体实施方式Detailed ways

下面结合附图和具体实施例对本实用新型进行详细说明。本实用新型并不限定于该实施方式,只要符合本实用新型的主旨,则其他实施方式也可以属于本实用新型的范畴。The utility model will be described in detail below in conjunction with the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also belong to the category of the present invention as long as they conform to the gist of the present invention.

本实用新型的较佳的实施例中,基于现有技术中存在的上述问题,现提供一种基于功率半导体温度特性的动态驱动电路,如图1所示,包括:In a preferred embodiment of the present utility model, based on the above-mentioned problems existing in the prior art, a dynamic drive circuit based on the temperature characteristics of power semiconductors is now provided, as shown in Figure 1, including:

第一关断电路1,第一关断电路1的信号接收端连接微控制单元2的第一信号输出端;The first shutdown circuit 1, the signal receiving end of the first shutdown circuit 1 is connected to the first signal output terminal of the micro control unit 2;

第二关断电路3,第二关断电路3的信号接收端连接微控单元2的第二信号输出端;The second shutdown circuit 3, the signal receiving end of the second shutdown circuit 3 is connected to the second signal output terminal of the microcontroller unit 2;

功率半导体4,功率半导体4的输出端连接第一关断电路1的输入端和第二关断电路3的输入端,功率半导体4的输入端连接第二关断电路3的输出端;A power semiconductor 4, the output end of the power semiconductor 4 is connected to the input end of the first shut-off circuit 1 and the input end of the second shut-off circuit 3, and the input end of the power semiconductor 4 is connected to the output end of the second shut-off circuit 3;

温度采样电路5,温度采样电路5的信号输出端连接微控制单元2的信号接收端,温度采样电路5用于采集功率半导体4的温度并发送温度采样信号,微控制单元2根据温度采样信号处理得到功率半导体4的温度。A temperature sampling circuit 5, the signal output end of the temperature sampling circuit 5 is connected to the signal receiving end of the micro control unit 2, the temperature sampling circuit 5 is used to collect the temperature of the power semiconductor 4 and send a temperature sampling signal, and the micro control unit 2 processes the temperature sampling signal according to the temperature sampling circuit 5. The temperature of the power semiconductor 4 is obtained.

具体的,本实施例中,根据功率半导体4的关断需求,微控制单元2控制第一关断电路1导通,对功率半导体4进行关断,同时微控制单元2根据温度采样电路5采集的温度采样信号得到功率半导体4的温度,当功率半导体4的温度不超过设定的温度阈值时,微控制单元控制第二关断电路关闭,只通过第一关断电路放电;当功率半导体4的温度超出设定的温度阈值时将第二关断电路3导通,实现通过第一关断电路1和第二关断电路3同时放电,加快功率半导体4的关断速度,减小功率半导体4的关断损耗,提高效率。Specifically, in this embodiment, according to the shut-off requirement of the power semiconductor 4, the micro-control unit 2 controls the first shut-off circuit 1 to turn on, and shuts off the power semiconductor 4, and at the same time, the micro-control unit 2 collects data according to the temperature sampling circuit 5 The temperature sampling signal of the power semiconductor 4 is used to obtain the temperature of the power semiconductor 4. When the temperature of the power semiconductor 4 does not exceed the set temperature threshold, the micro-control unit controls the second shutdown circuit to close, and only discharges through the first shutdown circuit; when the power semiconductor 4 When the temperature exceeds the set temperature threshold, the second shut-off circuit 3 is turned on to realize simultaneous discharge through the first shut-off circuit 1 and the second shut-off circuit 3, speed up the shut-off speed of the power semiconductor 4, and reduce the power semiconductor 4 turn-off losses, improving efficiency.

本实用新型的较佳的实施例中,如图1所示,功率半导体4为IGBT芯片,IGBT的G极作为功率半导体4的输出端,IGBT芯片的E极作为功率半导体4的输入端。In a preferred embodiment of the present utility model, as shown in FIG. 1 , the power semiconductor 4 is an IGBT chip, the G pole of the IGBT is used as the output end of the power semiconductor 4 , and the E pole of the IGBT chip is used as the input end of the power semiconductor 4 .

本实用新型的较佳的实施例中,如图1所示,IGBT芯片包括门极电容C1,门极电容C1的一端连接IGBT芯片的G极,门极电容C1的另一端连接IGBT芯片的E极。In a preferred embodiment of the present invention, as shown in Figure 1, the IGBT chip includes a gate capacitor C1, one end of the gate capacitor C1 is connected to the G pole of the IGBT chip, and the other end of the gate capacitor C1 is connected to the E pole of the IGBT chip. pole.

本实用新型的较佳的实施例中,如图1所示,第一关断电路1包括:In a preferred embodiment of the present utility model, as shown in Figure 1, the first shutdown circuit 1 includes:

上桥驱动芯片U1,上桥驱动芯片U1的第一信号接收端连接微控制单元2的第一信号输出端,上桥驱动芯片U1连接外部电源,上桥驱动芯片U1接地;The upper bridge driver chip U1, the first signal receiving end of the upper bridge driver chip U1 is connected to the first signal output end of the micro control unit 2, the upper bridge driver chip U1 is connected to an external power supply, and the upper bridge driver chip U1 is grounded;

第一电阻R1,第一电阻R1的一端连接上桥驱动芯片U1的第一控制端;A first resistor R1, one end of the first resistor R1 is connected to the first control terminal of the upper bridge driver chip U1;

第二电阻R2,第二电阻R2的一端连接上桥驱芯片U1的第二控制端,第二电阻R2的另一端连接第一电阻R1的另一端并作为第一关断电路1的输入端连接功率半导体4的输出端;The second resistor R2, one end of the second resistor R2 is connected to the second control terminal of the upper bridge driver chip U1, and the other end of the second resistor R2 is connected to the other end of the first resistor R1 as the input end of the first shutdown circuit 1 the output terminal of the power semiconductor 4;

上桥驱动芯片U1的第一信号接收端作为第一关断电路1的信号接收端。The first signal receiving end of the upper bridge driver chip U1 serves as the signal receiving end of the first turn-off circuit 1 .

具体的,本实施例中,如图1所示,功率半导体4以IGBT芯片为例,微控制单元根据关断需求向上桥驱动芯片U1持续发出占空比不同的第一控制信号,当第一控制信号为高电平时,上桥驱动芯片U1的第一控制端输出高电平,第二控制端处于高阻态,此时第一关断电路1开通,IGBT芯片通过第二电阻R2放电关断,门极电容C1的电荷通过R2放电直至门极电压低于IGBT阈值电压;当第一控制信号为低电平时,上桥驱动芯片U1的第一控制端为高阻态,第二控制端输出低电平,此时第一关断电路关断。Specifically, in this embodiment, as shown in FIG. 1 , the power semiconductor 4 takes an IGBT chip as an example, and the micro-control unit continuously sends out first control signals with different duty ratios to the upper bridge driver chip U1 according to the shutdown requirement. When the control signal is at a high level, the first control terminal of the upper bridge driver chip U1 outputs a high level, and the second control terminal is in a high-impedance state. At this time, the first shutdown circuit 1 is turned on, and the IGBT chip is discharged through the second resistor R2. The charge of the gate capacitor C1 is discharged through R2 until the gate voltage is lower than the IGBT threshold voltage; when the first control signal is low, the first control terminal of the upper bridge driver chip U1 is in a high-impedance state, and the second control terminal Output low level, at this time the first shutdown circuit is turned off.

本实用新型的较佳的实施例中,如图1所示,温度采样电路5的信号输出端通过上桥驱动芯片U1连接微控制单元2的信号接收端。In a preferred embodiment of the present invention, as shown in FIG. 1 , the signal output end of the temperature sampling circuit 5 is connected to the signal receiving end of the micro control unit 2 through the upper bridge driver chip U1 .

本实用新型的较佳的实施例中,如图1所示,温度采样电路5包括:In a preferred embodiment of the present utility model, as shown in Figure 1, the temperature sampling circuit 5 includes:

热敏采样电阻NTC,热敏采样电阻NTC设置于功率半导体4上,热敏采样电阻NTC的一端连接上桥驱动芯片U1的第一信号接收端和第三电阻R3的一端,热敏采样电阻NTC的另一端接地,第三电阻R3的另一端连接外部电源;The thermal sampling resistor NTC is arranged on the power semiconductor 4. One end of the thermal sampling resistor NTC is connected to the first signal receiving end of the upper bridge driver chip U1 and one end of the third resistor R3. The thermal sampling resistor NTC The other end of the third resistor R3 is connected to the external power supply;

上桥驱动芯片U1的信号输出端连接微控制单元2的信号接收端。The signal output end of the upper bridge driver chip U1 is connected to the signal receiving end of the micro control unit 2 .

热敏采样电阻NTC的一端作为温度采样电路5的信号输出端。One end of the thermistor sampling resistor NTC is used as the signal output end of the temperature sampling circuit 5 .

具体的,本实施例中,上桥驱动芯片U1根据温度采样电路5的电流值计算出热敏采样电阻NTC的电阻值,并根据热敏采样电阻NTC的电阻值进行温度标定拟合得到功率半导体4的实际温度发送给微控制单元2,微控制单元2判断实际温度大于预设的温度阈值时控制第二关断电路3导通,此处的温度标定拟合为现有技术,不作为本技术方案的发明点,此处不再赘述。Specifically, in this embodiment, the upper bridge driver chip U1 calculates the resistance value of the thermistor sampling resistor NTC according to the current value of the temperature sampling circuit 5, and performs temperature calibration and fitting according to the resistance value of the thermistor sampling resistor NTC to obtain the power semiconductor The actual temperature of 4 is sent to the micro control unit 2, and the micro control unit 2 controls the second shutdown circuit 3 to be turned on when it judges that the actual temperature is greater than the preset temperature threshold. The invention points of the technical solution will not be repeated here.

本实用新型的较佳的实施例中,第二关断电路3包括:In a preferred embodiment of the present utility model, the second shutdown circuit 3 includes:

隔离芯片U2,隔离芯片U2的信号接收端连接微控制单元2的第二信号输出端,隔离芯片U2的接线端连接第四电阻R4的一端;第四电阻R4的另一端连接第五电阻R5的一端,第五电阻R5的另一端连接隔离芯片U2的控制端,隔离芯片U2连接外部电源;The isolation chip U2, the signal receiving end of the isolation chip U2 is connected to the second signal output end of the micro control unit 2, the connection end of the isolation chip U2 is connected to one end of the fourth resistor R4; the other end of the fourth resistor R4 is connected to the fifth resistor R5 One end, the other end of the fifth resistor R5 is connected to the control end of the isolation chip U2, and the isolation chip U2 is connected to an external power supply;

场效应管T1,场效应管T1的栅极连接第三电阻R3的另一端,场效应管T1的漏极连接第一关断电路1的输入端,场效应管T1的源极连接第六电阻R6的一端,第六电阻R6的另一端连接功率半导体4的输入端并接地;Field effect transistor T1, the gate of field effect transistor T1 is connected to the other end of the third resistor R3, the drain of field effect transistor T1 is connected to the input end of the first shutdown circuit 1, and the source of field effect transistor T1 is connected to the sixth resistor One end of R6, the other end of the sixth resistor R6 is connected to the input end of the power semiconductor 4 and grounded;

场效应管T1的漏极作为第二关断电路3的输入端,第六电阻R6的另一端作为第二关断电路3的输出端,上桥驱动芯片U1的第二信号接收端作为第二关断电路3的信号接收端。The drain of the field effect transistor T1 is used as the input terminal of the second shutdown circuit 3, the other end of the sixth resistor R6 is used as the output terminal of the second shutdown circuit 3, and the second signal receiving terminal of the upper bridge driver chip U1 is used as the second Turn off the signal receiving end of the circuit 3 .

具体的,本实施例中,如图1所示,功率半导体4以IGBT芯片为例,微控制单元2向第二关断电路3持续发送不同占空比的第二控制信号,微控制单元2检测到IGBT芯片的温度小于温度阈值时,第二控制信号为低电平,隔离芯片U2的控制端输出低电平,场效应管T1的栅极被拉低,此时场效应管T1关断,即第二关断电路3关断;微控制单元2检测到IGBT芯片的温度不小于温度阈值时,第二控制信号为高电平,隔离芯片U2的控制端输出高电平,场效应管T2的栅极被拉高,场效应管T1打开,即第二关断电路3导通,此时IGBT芯片的门极电容C1通过第三电阻R3和第六电阻R6放电直至门极电压低于IGBT阈值电压,此时等效电阻近似于第三电阻R3和第六电阻R6并联,相当于减小了电阻,使功率半导体4放电速度加快,减小功率半导体4的关断损耗,提高工作效率。Specifically, in this embodiment, as shown in FIG. 1, the power semiconductor 4 takes an IGBT chip as an example, and the micro-control unit 2 continuously sends second control signals with different duty ratios to the second shutdown circuit 3. The micro-control unit 2 When it is detected that the temperature of the IGBT chip is lower than the temperature threshold, the second control signal is at a low level, the control terminal of the isolation chip U2 outputs a low level, and the gate of the field effect transistor T1 is pulled down, and the field effect transistor T1 is turned off at this time , that is, the second shutdown circuit 3 is turned off; when the micro-control unit 2 detects that the temperature of the IGBT chip is not less than the temperature threshold, the second control signal is at a high level, and the control terminal of the isolation chip U2 outputs a high level, and the FET The gate of T2 is pulled high, and the field effect transistor T1 is turned on, that is, the second turn-off circuit 3 is turned on. At this time, the gate capacitance C1 of the IGBT chip is discharged through the third resistor R3 and the sixth resistor R6 until the gate voltage is lower than IGBT threshold voltage, at this time, the equivalent resistance is similar to the parallel connection of the third resistor R3 and the sixth resistor R6, which is equivalent to reducing the resistance, accelerating the discharge speed of the power semiconductor 4, reducing the turn-off loss of the power semiconductor 4, and improving work efficiency .

具体的,本实用新型的较佳的实施例中,微控制单元2优选采用TMS320F28335芯片,或TMS32F28069芯片;上桥驱动芯片U1采用UCC21750芯片,或BF1181芯片;隔离芯片U2采用ISO7710FQDRQ1芯片,或NSI8210芯片。Specifically, in a preferred embodiment of the present utility model, the micro control unit 2 preferably adopts a TMS320F28335 chip, or a TMS32F28069 chip; the upper bridge driver chip U1 adopts a UCC21750 chip, or a BF1181 chip; the isolation chip U2 adopts an ISO7710FQDRQ1 chip, or an NSI8210 chip .

本实用新型的较佳的实施例中,场效应管T1为N沟道型场效应管。In a preferred embodiment of the present invention, the field effect transistor T1 is an N-channel type field effect transistor.

以上仅为本实用新型较佳的实施例,并非因此限制本实用新型的实施方式及保护范围,对于本领域技术人员而言,应当能够意识到凡运用本说明书及图示内容所作出的等同替换和显而易见的变化所得到的方案,均应当包含在本实用新型的保护范围内。The above are only preferred embodiments of the present utility model, and are not intended to limit the implementation and protection scope of the present utility model. For those skilled in the art, they should be able to realize that all equivalent replacements made by using this specification and the contents of the illustrations The solutions obtained with obvious changes shall all be included in the protection scope of the present utility model.

Claims (8)

1. A dynamic driving circuit based on a temperature characteristic of a power semiconductor, comprising:
the signal receiving end of the first turn-off circuit is connected with the first signal output end of the micro control unit;
the signal receiving end of the second turn-off circuit is connected with the second signal output end of the micro control unit;
the output end of the power semiconductor is connected with the input end of the first turn-off circuit and the input end of the second turn-off circuit, and the input end of the power semiconductor is connected with the output end of the second turn-off circuit;
the signal output end of the temperature sampling circuit is connected with the signal receiving end of the micro-control unit, the temperature sampling circuit is used for collecting the temperature of the power semiconductor and sending a temperature sampling signal, and the micro-control unit processes the temperature of the power semiconductor according to the temperature sampling signal.
2. The dynamic driving circuit of claim 1, wherein the first shutdown circuit comprises:
the upper bridge driving chip is connected with an external power supply, and is grounded;
one end of the first resistor is connected with a first control end of the upper bridge driving chip;
one end of the second resistor is connected with the second control end of the upper bridge driver chip, and the other end of the second resistor is connected with the other end of the first resistor and is used as the input end of the first turn-off circuit to be connected with the output end of the power semiconductor;
the first signal receiving end of the upper bridge driving chip is used as the signal receiving end of the first turn-off circuit.
3. The dynamic driving circuit according to claim 2, wherein the signal output end of the temperature sampling circuit is connected to the signal receiving end of the micro control unit through the upper bridge driving chip.
4. The dynamic driving circuit of claim 2, wherein the temperature sampling circuit comprises:
the thermal sampling resistor is arranged on the power semiconductor, one end of the thermal sampling resistor is connected with the first signal receiving end of the upper bridge driving chip and one end of the third resistor, the other end of the thermal sampling resistor is grounded, and the other end of the third resistor is connected with an external power supply;
the signal output end of the upper bridge driving chip is connected with the signal receiving end of the micro control unit;
one end of the thermosensitive sampling resistor is used as a signal output end of the temperature sampling circuit.
5. The dynamic driving circuit of claim 4, wherein the second shutdown circuit comprises:
the signal receiving end of the isolation chip is connected with the second signal output end of the micro control unit, and the wiring end of the isolation chip is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with one end of a fifth resistor, the other end of the fifth resistor is connected with the control end of the isolation chip, and the isolation chip is connected with an external power supply;
the grid electrode of the field effect tube is connected with the other end of the third resistor, the drain electrode of the field effect tube is connected with the input end of the first turn-off circuit, the source electrode of the field effect tube is connected with one end of a sixth resistor, and the other end of the sixth resistor is connected with the input end of the power semiconductor and grounded;
the drain electrode of the field effect transistor is used as the input end of the second turn-off circuit, the other end of the sixth resistor is used as the output end of the second turn-off circuit, and the second signal receiving end of the upper bridge driving chip is used as the signal receiving end of the second turn-off circuit.
6. The dynamic driving circuit of claim 5, wherein the fet is an N-channel fet.
7. The dynamic driving circuit according to claim 1, wherein the power semiconductor is an IGBT chip, a G-pole of the IGBT is an output terminal of the power semiconductor, and an E-pole of the IGBT chip is an input terminal of the power semiconductor.
8. The dynamic driving circuit of claim 7, wherein the IGBT chip comprises a gate capacitance, one end of the gate capacitance is connected to a G pole of the IGBT chip, and the other end of the gate capacitance is connected to an E pole of the IGBT chip.
CN202223458925.XU 2022-12-23 2022-12-23 Dynamic driving circuit based on temperature characteristics of power semiconductor Expired - Fee Related CN219304817U (en)

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