CN219280013U

CN219280013U - ICP ion source partition oxidation coating equipment

Info

Publication number: CN219280013U
Application number: CN202223444377.5U
Authority: CN
Inventors: 徐旻生; 张永胜
Original assignee: Shenzhen Aozhuo Vacuum Equipment Technology Co ltd
Current assignee: Shenzhen Aozhuo Vacuum Equipment Technology Co ltd
Priority date: 2022-12-22
Filing date: 2022-12-22
Publication date: 2023-06-30
Anticipated expiration: 2032-12-22

Abstract

The utility model discloses ICP ion source partition oxidation coating equipment, and belongs to the technical field of optical coating equipment. The utility model comprises a loading and unloading station, a wafer inlet and outlet chamber, a carrying chamber and a processing chamber, wherein the processing chamber comprises a coating drum, a lifting suspension mechanism, a cathode system, an ICP reaction source, a heater, a molecular pump and a coating power supply, the processing chamber is of a barrel type design, a plurality of isolated exhaust cavities are arranged, the isolated exhaust cavities are distributed at the upper, middle and lower positions of the processing chamber, the isolated exhaust cavities comprise a drum current limiting mechanism and a cavity current limiting mechanism, and the isolated exhaust cavities are positioned between the cathode system and the ICP reaction source. According to the utility model, the isolation capability of the atmosphere of the split reaction coating of the ICP ion source is effectively improved through the arrangement of the isolation exhaust cavity, the vacuum coating with high atmosphere isolation ratio is realized, the film quality of the film layer is improved, the product performance index is improved, the ICP reaction source is modified, the radio frequency of the ICP reaction source is fully shielded, the high-power coating is realized, and the oxidation relaxation time is prolonged.

Description

ICP ion source partition oxidation coating equipment

Technical Field

The utility model belongs to the technical field of optical coating equipment, and particularly relates to ICP ion source partition oxidation coating equipment.

Background

Inductively coupled plasma (InductivelyCoupledPlasma, ICP) technology has many advantages and benefits as a high density, unbiased plasma source for post-magnetron sputtering reactive ion sources. The ICP partition oxidation coating process is an ion source enhanced magnetron sputtering coating process and can meet the coating requirements of a plurality of low-defect low-damage high-end coating layers. In the existing equipment, the shielding design of the ICP ion source is not mature enough, electromagnetic leakage is easy, the ion source power is low, and the ion density is low. The isolation ratio of the ion source atmosphere is low, generally only the isolation ratio of 5:1 can be achieved, the problem of weakening of the isolation ratio of the middle atmosphere exists in the ICP ion source atmosphere isolation, the effective isolation height is limited, the reaction area of the ICP ion source is small, the reaction relaxation time is short, and the continuous film plating time is short. Therefore, an ICP ion source zone oxidation coating device is provided, and the problems are solved.

Disclosure of Invention

The utility model aims to provide an ICP ion source partition oxidation coating device, and aims to solve the problems that in the prior art, the ion source atmosphere isolation ratio of the existing coating device is low, and the middle atmosphere isolation ratio is weakened so as to limit the height of the device. In order to achieve the purpose, the utility model adopts the following technical scheme: the ICP ion source zone oxidation film plating equipment comprises a loading and unloading station, a film feeding and discharging chamber, a conveying chamber and a processing chamber, wherein vacuum gauges, pump groups and photoelectric sensors are arranged in the film feeding and discharging chamber, the conveying chamber and the processing chamber. The manufacturing process chamber comprises a coating drum, a lifting suspension mechanism, a cathode system, an ICP reaction source, a heater, a molecular pump and a coating power supply, wherein the drum type design of the manufacturing process chamber is provided with at least 6 isolated exhaust cavities which are distributed at the upper, middle and lower positions of the manufacturing process chamber, the isolated exhaust cavities comprise a drum flow-limiting mechanism and a cavity flow-limiting mechanism, and the functions of the drum flow-limiting mechanism and the cavity flow-limiting mechanism are to limit the process gas of the reaction source to enter a cathode sputtering area; an isolated exhaust cavity is located between the cathode system and the ICP reaction source. The isolation exhaust cavity is arranged to effectively improve the isolation capability of the ICP ion source partition reaction coating atmosphere, realize high atmosphere isolation ratio vacuum coating, improve the film quality of the film layer and improve the product performance index.

Further describing the foregoing schemes, the number of cathode systems is at least 4, and specifically includes a cylindrical rotating cathode system, a planar cathode system, and at least two ICP reaction sources, which can support DC, MF and RF coating techniques.

Further describing the scheme, the ICP reaction source comprises an RF power supply, a matcher, a radio frequency coupling coil, a radio frequency radiation window, an RF shielding plate, an induced discharge electrode and process gas distribution, wherein the RF power supply is electrically connected with the matcher through a coaxial cable, one end of the radio frequency coupling coil is connected with the matcher, the other end of the radio frequency coupling coil is grounded with equipment through a grounding capacitor, and the grounding capacitor is 100-300Pf. The ICP reaction source adopts an RF power supply of 13.56MHz, and Plasma ignition discharge is realized by inductive coupling through a radio frequency coupling coil, and the total power of the film coating reaches 80KW.

More preferably, the radio frequency radiation window is made of a high-strength quartz substrate material, and an inductive coupling window is provided for the radio frequency coupling coil, so that the purposes of full radio frequency shielding and no radio frequency overflow are realized. The non-maintaining coating can be applied to vacuum coating for a long time, the continuous coating time is longer than 2 months, and the continuous coating time of a common ICP ion source is shorter than 7 days.

More preferably, the radio frequency coupling coil is internally provided with cooling circulating water, the insulativity of the cooling circulating water is more than 15MΩ & cm, and the radio frequency coupling coil is safely and effectively cooled.

Further describing the scheme, the coating drum is connected with a high-speed motor to realize the rotation speed of the coating drum of 100RPM, so that the speed of the coating surface reaches more than 8300mm/s, and the thickness of the coating layer can reach the coating speed

/s。

More preferably, the molecular pump is transversely arranged, so that the defects that the atmosphere isolation ratio in the middle of the longitudinal exhaust mechanism is weakened and the isolation height is limited are overcome, and the isolation of the cathode atmosphere and the ICP ion source atmosphere is more effectively realized.

More preferably, the number of loading and unloading stations and the number of in-out film chambers are two, the two loading and unloading stations and the two in-out film chambers are distributed on two sides of the conveying chamber, and the two loading and unloading stations and the film chambers run synchronously in two directions, so that the production efficiency is improved.

Compared with the prior art, the utility model has the following beneficial effects:

1. the device has the advantages that at least 6 isolation exhaust cavities are arranged, the isolation exhaust cavities are distributed at the upper, middle and lower positions of the process chamber, the isolation of cathode atmosphere and ICP ion source atmosphere is realized more directly and effectively by adopting the transverse exhaust mechanism, the defect that the middle atmosphere isolation ratio of the longitudinal exhaust mechanism is weakened, the atmosphere isolation ratio can reach more than 10:1 and is far higher than the current atmosphere isolation ratio of 5:1, the isolation capability of the ICP ion source partition reaction coating atmosphere is improved, the high atmosphere isolation ratio vacuum coating is realized, and the film quality of a film layer is improved, so that the product performance index is improved.

2. The effective atmosphere isolation height of the device can reach more than 1550mm, so that more products can be hung on the coating drum, and the productivity is increased by 2-3 times.

3. The ICP reaction source of the patent has the advantages that through the design of a high-power RF power supply, a water-cooling radio frequency coupling coil and a radio frequency radiation window of a high-strength quartz substrate, the oxidation relaxation time can reach more than 30-100 ms, the radio frequency shielding is sufficient, the problem of radio frequency overflow is avoided, the continuous coating time is more than 2 months, the total coating power can reach 80KW, and the coating speed and the thickness of a film layer can reach 60

/s。

Drawings

FIG. 1 is a schematic view of an embodiment of the present utility model;

FIG. 2 is an enlarged view of an embodiment of the present utility model;

fig. 3 is a schematic diagram of an ICP reaction source according to an embodiment of the utility model.

Wherein, each reference sign in the figure:

1. a loading and unloading station; 2. a sheet inlet and outlet chamber; 3. a conveying chamber; 4. a process chamber; 5. a cathode; 6. an ICP reaction source; 7. a substrate jig; 8. a vacuum manipulator; 9. a molecular pump; 10. isolating the exhaust cavity; 12. a coating drum; 13. a drum flow-limiting mechanism; 14. a cavity flow restricting mechanism; 15. an RF power source; 16. a coaxial cable; 17. a matcher; 18. a radio frequency coupling coil; 19. a radio frequency radiation window; 20. a ground capacitor; 21. an RF shield plate; 22. inducing a discharge electrode; 23. and (5) air distribution in the process.

Detailed Description

In order that the utility model may be readily understood, a more complete description of the utility model will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the utility model. This utility model may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

The technical scheme of the patent is further described in detail below with reference to the specific embodiments.

Referring to fig. 1-3, the present utility model provides an ICP ion source zone oxidation coating apparatus, which includes a loading/unloading station 1, a loading/unloading chamber 2, a carrying chamber 3, and a processing chamber 4, wherein vacuum gauges, pump sets and photoelectric sensors are disposed in the loading/unloading chamber 2, the carrying chamber 3, and the processing chamber 4. The manufacturing chamber 4 comprises a coating drum 12, a lifting suspension mechanism, a cathode system 5, an ICP reaction source 6, a heater, a molecular pump 9 and a coating power supply, wherein the manufacturing chamber 4 is in a barrel type design and is provided with 6 isolated exhaust cavities 10, the isolated exhaust cavities 10 are distributed at the upper, middle and lower positions of the manufacturing chamber 4, the isolated exhaust cavities 10 comprise a drum flow limiting mechanism 13 and a cavity flow limiting mechanism 14, and the drum flow limiting mechanism 13 and the cavity flow limiting mechanism 14 limit the reaction source process gas to enter a cathode sputtering area; an isolated exhaust cavity 10 is located between the cathode system 5 and the ICP reaction source 6. The isolation exhaust cavity 10 is arranged to effectively improve the isolation capability of the ICP ion source zone reaction coating atmosphere, realize high atmosphere isolation ratio vacuum coating and improve the performance index of the product by improving the membranous quality of the membranous layer. The cathode system 5 is provided with 4 sets, specifically comprises a cylindrical rotating cathode system and a planar cathode system, and the number of ICP reaction sources 6 is two, so that DC, MF and RF coating technologies can be supported.

Referring to fig. 3, an RF power supply 15 of the icp reaction source 6 is electrically connected to a matcher 17 through a coaxial cable 16, one end of a radio frequency coupling coil 18 is connected to the matcher 17, the other end is grounded to the apparatus through a grounding capacitor 20, and the grounding capacitor 20 is 100-300Pf. The ICP reaction source 6 adopts an RF power supply 15 of 13.56MHz, and realizes Plasma ignition discharge through inductive coupling by a radio frequency coupling coil 18, and the total power of film coating is up to 80KW. The radio frequency radiation window 19 is made of a high-strength quartz substrate material, provides an inductive coupling window for the radio frequency coupling coil 18, and achieves the purposes of full radio frequency shielding and no radio frequency overflow. The non-maintaining coating can be applied to vacuum coating for a long time, the continuous coating time is longer than 2 months, and the continuous coating time of a common ICP ion source is shorter than 7 days. The radio frequency coupling coil 18 is internally provided with cooling circulating water, the insulativity of the cooling circulating water is larger than 15MΩ & cm, and the cooling and cooling of the radio frequency coupling coil 18 are safely and effectively realized.

The coating drum 12 is connected with a high-speed motor to realize the rotation speed of the coating drum 12 of 100RPM, so that the speed of the coating surface reaches more than 8300mm/s, and the coating speed and the thickness of the coating layer can reach

And/s. The molecular pump 9 is transversely arranged, so that the defects that the isolation ratio of the atmosphere in the middle of the longitudinal exhaust mechanism is weakened and the isolation height is limited are overcome, and the isolation of the cathode atmosphere and the ICP ion source atmosphere is more effectively realized. The loading and unloading stations 1 and the tablet inlet and outlet chambers 2 are two in number and distributed on two sides of the conveying chamber 3, and the two-way synchronous operation is realized, so that the production efficiency is improved.

The working principle and the working mode of the device are further described below for the sake of a clearer understanding of the present utility model.

In the actual use process, firstly, the empty substrate jig 7 is transmitted to the loading and unloading station 1, an operator installs the cleaned substrate to be coated on the substrate jig 7, and after the completion, the substrate jig 7 is sent into the wafer inlet and outlet chamber 2. After the substrate jig 7 is sent into the wafer inlet and outlet chamber 2, the gate valve is closed and a vacuum pump is used for vacuumizing, and the wafer inlet and outlet chamber 2 is a transition chamber between atmosphere and vacuum. When the vacuum gauge monitors that the vacuum degree of the wafer inlet and outlet chamber 2 reaches the requirement, the door valves of the wafer inlet and outlet chamber 2 and the conveying chamber 3 are opened, the vacuum mechanical arm 8 conveys the substrate jig 7 from the wafer inlet and outlet chamber 2 to the coating drum 12 in the process chamber 4, and the door valve is closed after the substrate jig 7 is installed on the whole cylindrical surface of the coating drum 12 through the lifting hanging mechanism. At this time, coating sputtering is started, a high-speed motor drives a coating drum 12 to run at a high speed, an ICP reaction source 6, a heater and a cathode system 5 are electrified to run, and an isolated exhaust cavity 10 is precisely designed, so that N2, 02 and other reaction gases in the area of the ICP reaction source 6 are isolated by adopting a drum flow limiting mechanism 13 and a cavity flow limiting mechanism 14 to enter a cathode sputtering area. After the film plating deposition is finished, the vacuum mechanical arm 8 transfers the substrate jig 7 to the film inlet and outlet chamber 2, the gate valves of the film inlet and outlet chamber 2 and the vacuum mechanical arm 8 are closed, then the gate valve connected with the atmosphere is opened, the substrate jig 7 is transferred to the loading and unloading station 1, and an operator takes down the film plated substrate.

It should be noted that the number of loading and unloading stations 1 and the number of the wafer inlet and outlet chambers 2 are two, and when the substrate is disassembled on one side, the substrate to be coated is mounted on the substrate jig 7 on the other side at the same time, so that continuous operation of the production line is realized, and the working efficiency is greatly improved.

To sum up, the present patent is provided with at least 6 isolation exhaust cavities 10, and the isolation exhaust cavities 10 are distributed at the upper, middle and lower positions of the process chamber 4, and the isolation between the cathode atmosphere and the ICP ion source atmosphere is more directly and effectively realized by adopting the transverse exhaust mechanism, so that the defect that the middle atmosphere isolation ratio of the longitudinal exhaust mechanism is weakened, the atmosphere isolation ratio can reach more than 10:1, and is far higher than the current atmosphere isolation ratio of 5:1, the atmosphere isolation capability of the ICP ion source partition reaction coating is improved, the high atmosphere isolation ratio vacuum coating is realized, and the film quality of the film layer is improved, thereby improving the product performance index. The ICP reaction source 6 has the advantages that the oxidation relaxation time can reach more than 30-100 ms, the radio frequency shielding is sufficient, the radio frequency overflow problem is avoided, the continuous coating time is more than 2 months, the total coating power can reach 80KW, and the coating speed and the thickness of a film layer can reach by the design of a high-power RF power supply 15, a water-cooling radio frequency coupling coil 18 and a radio frequency radiation window 19 of a high-strength quartz substrate

/s。

It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiments, and the terms "upper," "lower," "left," "right," "front," "back," and the like are used herein with reference to the positional relationship of the drawings.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

The above embodiments are only for illustrating the present utility model, not for limiting the present utility model, and various changes and modifications may be made by one of ordinary skill in the relevant art without departing from the spirit and scope of the present utility model, and therefore, all equivalent technical solutions are also within the scope of the present utility model, and the scope of the present utility model is defined by the claims.

Claims

1. The utility model provides an ICP ion source subregion oxidation coating film equipment, includes loading and unloading station (1), advances out of piece room (2), carries room (3), process chamber (4), all be equipped with vacuum gauge, pump group and photoelectric sensor in advancing out of piece room (2), carrying room (3), process chamber (4), including coating film drum (12), lift suspension mechanism, cathode system (5), ICP reaction source (6), heater, molecular pump (9) and coating film power in process chamber (4), its characterized in that: the device is characterized in that the process chamber (4) is designed in a barrel type, at least 6 isolation exhaust cavities (10) are arranged, the isolation exhaust cavities (10) are distributed at the upper, middle and lower positions of the process chamber (4), the isolation exhaust cavities (10) comprise a barrel flow limiting mechanism (13) and a cavity flow limiting mechanism (14), and the isolation exhaust cavities (10) are located between the cathode system (5) and the ICP reaction source (6).

2. The ICP ion source zoned oxidation coating apparatus according to claim 1, wherein: the number of the cathode systems (5) is at least 4, and the cathode systems comprise a cylindrical rotating cathode system and a planar cathode system; the number of the ICP reaction sources (6) is at least two.

3. The ICP ion source zone oxidation coating apparatus according to claim 2, wherein: the ICP reaction source (6) comprises an RF power supply (15), a matcher (17), a radio frequency coupling coil (18), a radio frequency radiation window (19), an RF shielding plate (21), an induced discharge electrode (22) and process air distribution (23), wherein the RF power supply (15) is electrically connected with the matcher (17) through a coaxial cable (16), one end of the radio frequency coupling coil (18) is connected with the matcher (17), and the other end of the radio frequency coupling coil is grounded with equipment through a grounding capacitor (20).

4. An ICP ion source zoned oxidation coating apparatus according to claim 3, wherein: the radio frequency radiation window (19) is made of a high-strength quartz substrate material.

5. An ICP ion source zoned oxidation coating apparatus according to claim 3, wherein: the radio frequency coupling coil (18) is internally provided with cooling circulating water.

6. An ICP ion source zoned oxidation coating apparatus according to claim 3, wherein: the size of the grounding capacitor (20) is 100-300Pf.

7. The ICP ion source zoned oxidation coating apparatus according to claim 1, wherein: the coating drum (12) is connected with a high-speed motor.

8. The ICP ion source zoned oxidation coating apparatus according to claim 1, wherein: the molecular pump (9) is arranged transversely.

9. An ICP ion source zone oxidation coating apparatus according to any one of claims 1 to 8, characterized in that: the loading and unloading stations (1) and the tablet inlet and outlet chambers (2) are two in number and distributed on two sides of the conveying chamber (3).