CN219225549U - RF tag, antenna, and RF tag attached article - Google Patents
RF tag, antenna, and RF tag attached article Download PDFInfo
- Publication number
- CN219225549U CN219225549U CN202190000289.0U CN202190000289U CN219225549U CN 219225549 U CN219225549 U CN 219225549U CN 202190000289 U CN202190000289 U CN 202190000289U CN 219225549 U CN219225549 U CN 219225549U
- Authority
- CN
- China
- Prior art keywords
- antenna
- tag
- conductive thin
- conductive
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 201
- 239000012790 adhesive layer Substances 0.000 claims abstract description 133
- 239000000463 material Substances 0.000 claims abstract description 117
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 238000000926 separation method Methods 0.000 claims abstract description 48
- 238000002834 transmittance Methods 0.000 claims description 176
- 239000011800 void material Substances 0.000 claims description 32
- 239000000853 adhesive Substances 0.000 claims description 31
- 230000001070 adhesive effect Effects 0.000 claims description 31
- 230000004075 alteration Effects 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 121
- 238000000034 method Methods 0.000 description 82
- 239000010408 film Substances 0.000 description 54
- 238000010304 firing Methods 0.000 description 51
- -1 polyethylene terephthalate Polymers 0.000 description 44
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 239000012792 core layer Substances 0.000 description 28
- 239000012298 atmosphere Substances 0.000 description 26
- 230000006870 function Effects 0.000 description 22
- 229920005989 resin Polymers 0.000 description 21
- 239000011347 resin Substances 0.000 description 21
- 239000002609 medium Substances 0.000 description 19
- 238000012546 transfer Methods 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 238000004891 communication Methods 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 229920000139 polyethylene terephthalate Polymers 0.000 description 13
- 239000005020 polyethylene terephthalate Substances 0.000 description 13
- 239000002270 dispersing agent Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 238000000605 extraction Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000002923 metal particle Substances 0.000 description 11
- 239000004094 surface-active agent Substances 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 10
- 108010076504 Protein Sorting Signals Proteins 0.000 description 10
- 230000001590 oxidative effect Effects 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000010030 laminating Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 9
- 239000011112 polyethylene naphthalate Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 150000001282 organosilanes Chemical class 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005674 electromagnetic induction Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000615 nonconductor Substances 0.000 description 4
- 229920002492 poly(sulfone) Polymers 0.000 description 4
- 229920001230 polyarylate Polymers 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920006393 polyether sulfone Polymers 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 229920000915 polyvinyl chloride Polymers 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 229920000180 alkyd Chemical class 0.000 description 3
- 239000004760 aramid Substances 0.000 description 3
- 229920003235 aromatic polyamide Polymers 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 150000007974 melamines Chemical class 0.000 description 3
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011254 layer-forming composition Substances 0.000 description 2
- 150000002681 magnesium compounds Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Chemical class 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000010420 shell particle Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q20/00—Payment architectures, schemes or protocols
- G06Q20/30—Payment architectures, schemes or protocols characterised by the use of specific devices or networks
- G06Q20/34—Payment architectures, schemes or protocols characterised by the use of specific devices or networks using cards, e.g. integrated circuit [IC] cards or magnetic cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/40—Radiating elements coated with or embedded in protective material
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Business, Economics & Management (AREA)
- General Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Security & Cryptography (AREA)
- Accounting & Taxation (AREA)
- Strategic Management (AREA)
- General Business, Economics & Management (AREA)
- Details Of Aerials (AREA)
- Credit Cards Or The Like (AREA)
Abstract
The present utility model provides an RF tag, an antenna, and an RF tag attached object, the RF tag comprising: a substrate; an antenna unit disposed on the base material; a semiconductor element electrically connected to the antenna unit; and an adhesive layer formed so as to cover at least a part of the antenna section and the semiconductor element, the antenna section having a line width (W 2 ) When the adhesive layer is peeled from the antenna portion, the adhesive layer carries away the 1 st separation portion including at least a part of the conductive thin line, and the 2 nd separation portion including the other part of the conductive thin line other than the part of the conductive thin line remains on the base material.
Description
Technical Field
The present utility model relates to an RF tag and a method of using the same, and an antenna for the RF tag.
Background
For example, in an automobile, as an antenna for receiving various radio waves such as television radio waves and FM radio waves, radio waves related to position coordinate information from a GPS (global positioning system: global positioning system) satellite used in a car navigation system, a film antenna provided on a windshield glass or the like is known.
In addition, film antennas are also used in Radio Frequency Identification (RFID) technology, which is widely used in many industries including transportation, handling, manufacturing, waste management, tracking of mail, baggage inspection on aircraft, and toll road toll management. RFID tags and labels are useful for tracking the distribution from the supplier to the customer and through the supply chain of the customer.
As such a film antenna, a technique of forming an antenna by using a conductive pattern to improve the invisibility of the conductive pattern has been proposed (for example, see patent documents 1 to 4 and 11).
In addition to the use of the Radio Frequency Identification (RFID) technology for tracking the distribution of an article, the RFID technology is also used for providing a service corresponding to the use condition of the article by a user after the article reaches an end customer (user). For example, the following uses can be mentioned: the use amount of the consumer product is estimated by using the RFID tag to periodically transmit a purchase notification to the user (see, for example, patent document 5), or the presence or absence of opening is checked by disposing the RFID tag in the packaging container so that a line break occurs at the time of opening (see, for example, patent document 6).
In addition, in the case of using such an RFID tag, there has been proposed an RFID tag in which, when a strong adhesive layer is formed on the surface of the tag and the tag is used by adhesion, the RFID tag is broken to suppress reuse (for example, refer to patent documents 7 to 10).
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2011-66610
Patent document 2: japanese patent laid-open publication No. 2011-91788
Patent document 3: japanese patent application laid-open No. 2017-175540
Patent document 4: japanese patent laid-open publication 2016-105624
Patent document 5: international publication No. 2017/127396
Patent document 6: international publication No. 2018/103179
Patent document 7: U.S. patent publication No. 2013-0068842 specification
Patent document 8: japanese patent laid-open No. 2019-009701
Patent document 9: japanese patent laid-open No. 2009-075711
Patent document 10: japanese patent application laid-open No. 2014-134997
Patent document 11: japanese patent application laid-open No. 2010-239259
Disclosure of Invention
Problems to be solved by the utility model
As described above, the RF tag is used not only for circulation management of articles but also for improving user experience.
Here, predetermined information corresponding to the use of the RF tag and the use environment thereof is stored in the semiconductor element provided with the RF tag. In some cases, information to be prevented from leakage is included, for example, information similar to personal information such as a living environment of a user can be inferred. Therefore, it is desirable to have a function of preventing information from being extracted from the RF tag after use.
In the related art, the adhesive layer and a part of the base material layer to which the RFID tag is adhered are made to be easily breakable, and the RFID tag is broken when the adhesive layer or the base material layer is peeled off, or functional components such as an antenna constituting the RFID tag are left on the side of the object to be adhered when the adhesive layer or the base material layer is peeled off, so that the reuse of the RFID tag is suppressed, but the RFID tag is not sufficiently broken, and as a result, there is a problem that the reuse of the RFID tag cannot be sufficiently suppressed. For example, a technique for forming a strong adhesive layer and a weak adhesive layer in an adhesive layer (for example, refer to patent document 8) tends to be as follows: peeling occurs only at the interface with the weak adhesive layer, and the RFID tag itself is not destroyed, so that reuse cannot be suppressed. In addition, the technique of forming a breakable layer in a base material layer (for example, see patent document 9) also tends to be as follows: as a result, the substrate is peeled off in a state of impairing the function of the RFID tag, and reuse cannot be suppressed.
The essence of these problems is that the easy-to-peel layer and the easy-to-break layer are provided outside the RFID surface, and thus the RFID itself is difficult to break.
The present utility model has been made in view of the above-described problems, and an object thereof is to provide an RF tag, a method of using the same, and an antenna for an RF tag as embodiment 1, in which an antenna portion constituting the RF tag is reliably broken, and the breaking of the RF tag can be easily detected, thereby enabling the reuse of the RFID tag to be suppressed.
Further, according to patent documents 1 to 4 and 11, although the transparent antenna is described, the line width is large and the conductive thin line is of a size that can be seen by the eye according to the specific embodiment of the example and the like. When the antenna is formed using the conductive thin wire described in the above patent document, the thin wire constituting the conductive thin wire can be visually recognized, and therefore, the region where the antenna is formed can be visually recognized.
In contrast, for example, the line width of the conductive thin line is set to 5.0 μm or less, thereby improving the invisibility of the conductive thin line. Therefore, when an antenna is formed on a transparent substrate by using the conductive thin line having the line width, it is expected to obtain an antenna having low visibility. However, it is actually known that when the antenna is formed using conductive thin lines having a line width in this range, even if the thin lines constituting the conductive pattern cannot be visually recognized, the region where the conductive thin lines are formed has a reduced visible light transmittance or a color tone is changed due to the material of the thin lines, and thus the antenna can be visually distinguished from other regions.
The present utility model has been made in view of the above problems, and an object thereof is to provide a transparent antenna and an RF tag in which visibility of an antenna portion is reduced as embodiment 2 and embodiment 3.
Solution for solving the problem
The present inventors have made intensive studies to solve the above problems. As a result, it has been found that the above-described problems can be solved by sandwiching an inlay of an RF tag between a base material and an adhesive layer, and breaking the inlay so that conductive threads constituting an antenna portion of the RF tag are separated toward the adhesive layer side and the base material side, respectively, when the adhesive layer is peeled off, and by providing that the state can be easily detected, and the present utility model has been completed.
That is, embodiment 1 of the present utility model is as follows.
[ 1 ] to provide an RF tag, wherein the RF tag comprises: a substrate; an antenna unit disposed on the base material; a semiconductor element electrically connected to the antenna unit; and an adhesive layer formed so as to cover at least a part of the antenna section and the semiconductor element, the antenna section having a line width W 2 When the adhesive layer is peeled from the antenna portion, the adhesive layer carries away the 1 st separation portion including at least a part of the conductive thin line, and the 2 nd separation portion including the other part of the conductive thin line other than the part of the conductive thin line remains on the base material.
[ 2 ] is the RF tag according to [ 1 ], wherein the 1 st separation section includes the semiconductor element.
[ 3 ] is the RF tag according to [ 1 ], wherein the 2 nd separation section includes the semiconductor element.
The RF tag according to any one of [ 1 ] to [ 3 ], wherein the 1 st separation portion is a portion of the conductive thread and includes a portion of the conductive thread on the adhesive layer side in the height direction, and the 2 nd separation portion is another portion of the conductive thread and includes another portion of the conductive thread on the substrate side corresponding to the portion of the conductive thread on the adhesive layer side.
The RF tag according to any one of [ 1 ] to [ 3 ], wherein the antenna portion includes a conductive pattern having conductive fine lines, and visible light of the conductive pattern is transmitted through the conductive patternRate Tr 1 More than 80%.
[ 6 ] is the RF tag according to any one of [ 1 ] to [ 3 ], wherein the gap G of the conductive thin wire 2 Is 60 μm or more and 300 μm or less.
The RF tag according to any one of [ 1 ] to [ 3 ], wherein the substrate is a transparent substrate.
The RF tag according to any one of [ 1 ] to [ 3 ], wherein the substrate is a transparent substrate having a 1 st main surface and a 2 nd main surface, the thin line pattern portion having the conductive thin line satisfies any one of the following conditions (i) and (ii),
(i) The optical element comprises a transmittance adjustment section composed of a 2 nd pattern, the transmittance adjustment section being disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent base material and being formed on at least the periphery of the antenna section in a plan view, the transmittance adjustment section having a visible light transmittance Tr at a position adjacent to the antenna section in a plan view 21 Visible light transmittance Tr with the antenna portion 1 Absolute value of difference |Tr 21 －Tr 1 The I is less than 10 percent,
(ii) Comprises a color adjustment section which is disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent substrate and is formed on at least the periphery of the antenna section in a plan view,
chromaticity C of the color tone adjusting portion at a position adjacent to the antenna portion in plan view 2 (L 2 ＊，a 2 ＊，b 2 And the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less.
[ 9 ] an antenna, wherein the antenna comprises: a substrate; an antenna unit disposed on the base material;and an adhesive layer formed so as to cover at least a part of the antenna section, the antenna section having a line width W 2 When the adhesive layer is peeled from the antenna portion, the adhesive layer carries away the 1 st separation portion including at least a part of the conductive thin line, and the 2 nd separation portion including the other part of the conductive thin line other than the part of the conductive thin line remains on the base material.
[ 10 ] provides an RF tag attached article comprising the RF tag of any one of [ 1 ] to [ 3 ] and an object to which the RF tag is attached.
[ 11 ] provides a method for using an RF tag according to any one of [ 1 ] to [ 3 ], wherein the RF tag is destroyed by peeling off the base material and the adhesive layer to take away at least a part of the antenna section.
The present inventors have also made intensive studies to solve the above problems. As a result, it has been found that the above-described problems can be solved by providing a predetermined transmittance adjustment section, and the present utility model has been completed.
That is, embodiment 2 of the present utility model is as follows.
[ 1 ] provides a transparent antenna comprising: a transparent substrate having a 1 st major surface and a 2 nd major surface; an antenna section which is formed of a 1 st pattern, is disposed on the 1 st main surface of the transparent substrate, and has conductive thin lines having a line width of 0.25 [ mu ] m or more and 5.0 [ mu ] m or less; and a transmittance adjustment unit that is formed of a 2 nd pattern, is disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent substrate, and is formed on at least a periphery of the antenna unit in a top view, and has a visible light transmittance Tr at a position adjacent to the antenna unit in a top view 21 Visible light transmittance Tr with the antenna portion 1 Absolute value of difference |Tr 21 －Tr 1 The I is below 10%.
[ 2 ] is the transparent antenna according to [ 1 ], wherein the 2 nd pattern is constituted by conductive thin lines.
The transparent antenna according to [ 3 ], wherein the 2 nd pattern has conductive thin lines having a line width of 0.25 μm or more and 5.0 μm or less.
[ 4 ] is the transparent antenna according to any one of [ 1 ] to [ 3 ], wherein the visible light transmittance Tr of the peripheral portion of the transparent substrate 22 A visible light transmittance Tr greater than the antenna portion 1 。
[ 5 ] is the transparent antenna according to [ 4 ], wherein the visible light transmittance Tr 22 Greater than the visible light transmittance Tr 21 Visible light transmittance Tr of the 2 nd pattern 21 The number of the antenna portions increases stepwise from a position adjacent to the antenna portion to a peripheral edge portion of the transparent substrate in plan view.
[ 6 ] is the transparent antenna according to any one of [ 1 ] to [ 3 ], wherein the visible light transmittance Tr of the peripheral portion of the transparent substrate 22 A visible light transmittance Tr smaller than the antenna portion 1 。
The transparent antenna according to any one of [ 1 ] to [ 6 ], wherein the transmittance adjusting section is arranged so as not to overlap with the antenna section in a plan view.
The transparent antenna according to any one of [ 1 ] to [ 7 ], wherein the transmittance adjustment section is arranged so that a part of the transmittance adjustment section overlaps the antenna section in a plan view.
The transparent antenna according to any one of [ 1 ] to [ 8 ], wherein the visible light transmittance Tr of the antenna section is equal to or greater than the visible light transmittance Tr of the antenna section 1 80% or more and 99.0% or less, and the visible light transmittance Tr of the transmittance adjustment portion 21 85% or more and 99.9% or less.
The transparent antenna according to any one of [ 1 ] to [ 9 ], wherein the transmittance adjustment section is disposed on the 1 st main surface, and a width of a non-conductive region formed between the antenna section and the transmittance adjustment section is 5 μm or more and 1000 μm or less.
[ 11 ] provides an RF tag comprising the transparent antenna according to any one of [ 1 ] to [ 10 ], and a semiconductor element electrically connected to the antenna section.
The present inventors have also made intensive studies to solve the above problems. As a result, it has been found that the above problems can be solved by providing a predetermined color adjustment unit, and the present utility model has been completed.
That is, embodiment 3 of the present utility model is as follows.
[ 1 ] provides a transparent antenna, wherein the transparent antenna comprises: a transparent substrate having a 1 st major surface and a 2 nd major surface; an antenna section which is formed of a 1 st pattern, is disposed on the 1 st main surface of the transparent substrate, and has conductive thin lines having a line width of 0.25 [ mu ] m or more and 5.0 [ mu ] m or less; and a color tone adjustment unit which is disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent substrate and is formed on at least the periphery of the antenna unit in a plan view, wherein the color tone adjustment unit has a chromaticity C at a position adjacent to the antenna unit in a plan view 2 (L 2 ＊，a 2 ＊，b 2 And the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less.
[ 2 ] is the transparent antenna according to [ 1 ], wherein the tone adjustment portion is constituted by a 2 nd pattern.
[ 3 ] is the transparent antenna according to [ 2 ], wherein the 2 nd pattern is constituted by conductive thin lines.
[ 4 ] is the transparent antenna according to [ 3 ], wherein the 2 nd pattern has conductive thin lines having a line width of 0.25 μm or more and 5.0 μm or less.
The transparent antenna according to any one of [ 1 ] to [ 4 ], wherein the color adjustment portion is disposed so as not to overlap with the antenna portion in a plan view.
The transparent antenna according to any one of [ 1 ] to [ 5 ], wherein the color adjustment portion is disposed so that a part of the color adjustment portion overlaps the antenna portion in a plan view.
The transparent antenna according to any one of [ 1 ] to [ 6 ], wherein the tone adjustment portion is disposed on the 1 st main surface, and a width of a non-conductive region formed between the antenna portion and the tone adjustment portion is 5 μm or more and 1000 μm or less.
[ 8 ] provides an RF tag comprising the transparent antenna according to any one of [ 1 ] to [ 7 ], and a semiconductor element electrically connected to the antenna section.
ADVANTAGEOUS EFFECTS OF INVENTION
With embodiment 1 of the present utility model, an RF tag, a method of using the same, and an antenna for the RF tag can be provided.
Further, according to embodiment 2 and embodiment 3 of the present utility model, a transparent antenna and an RF tag in which visibility of an antenna portion is reduced can be provided.
Drawings
Fig. 1 is a cross-sectional view showing one embodiment of the RF tag according to embodiment 1.
Fig. 2 is a plan view showing an embodiment of the RF tag according to embodiment 1 before an adhesive layer is formed.
Fig. 3 is an enlarged view of S1a of fig. 2.
Fig. 4 is an enlarged view of S2 of fig. 3.
Fig. 5 is an enlarged view of S3 of fig. 3.
Fig. 6 is a schematic diagram showing a cross section of the conductive thin wire in embodiments 1 to 3.
Fig. 7 is another schematic diagram showing a cross section of the conductive thin wire in embodiments 1 to 3.
Fig. 8 is a schematic configuration diagram of the transparent antenna 1 according to embodiment 2.
Fig. 9 is a schematic configuration diagram showing another embodiment of the antenna unit 13 and the collector unit 12 in embodiment 2.
Fig. 10 is an enlarged view of the S1 part of fig. 8 showing the 1 st pattern 131 constituting the antenna portion 13.
Fig. 11 is a schematic diagram showing another embodiment of the 1 st pattern 131 in embodiment 2.
Fig. 12 is an enlarged view of the S2 portion of fig. 8 showing the 2 nd pattern 151 constituting the transmittance adjustment unit 17 according to embodiment 2.
Fig. 13 is an enlarged view of a portion S3 in fig. 8 showing a boundary between the antenna portion 13 and the transmittance adjustment unit 17 in embodiment 2.
Fig. 14 is a schematic configuration diagram of RF tag 100 in embodiment 2 and embodiment 3.
Fig. 15 is a schematic side view of RF tag 100 in embodiment 2 and embodiment 3.
Fig. 16 is a plan view showing a straight form of the RF tag according to embodiment 3.
Fig. 17 is an enlarged view of S1a of fig. 16.
Fig. 18 is a plan view showing a loop type configuration of the RF tag according to embodiment 3.
Fig. 19 is an enlarged view of S1b of fig. 18.
Fig. 20 is an enlarged view of a portion S1 in fig. 16 and 18 showing a 1 st pattern 131 constituting the antenna unit 13 in embodiment 3.
Fig. 21 is a schematic diagram showing another embodiment of the 1 st pattern 131 in embodiment 3.
Fig. 22 is an enlarged view of the S2 portion of fig. 16 and 18 showing the 2 nd pattern 151 constituting the color adjustment unit 18 in embodiment 3.
Fig. 23 is an enlarged view of a portion S3 in fig. 16 and 18 showing the boundary between the antenna unit 13 and the tone adjustment unit 18 in embodiment 3.
Detailed Description
The following describes embodiments of the present utility model in detail, but the present utility model is not limited thereto, and various modifications can be made without departing from the spirit thereof. In the drawings, the same elements are denoted by the same reference numerals, and repetitive description thereof will be omitted. The positional relationship between the upper, lower, left, right, etc. is based on the positional relationship shown in the drawings unless otherwise specified. The dimensional ratios in the drawings are not limited to the ratios shown in the drawings.
[ RF tag ]
The RF tag according to embodiment 1 includes a base material, an antenna portion disposed on the base material, a semiconductor element electrically connected to the antenna portion, and an adhesive layer formed so as to cover at least a part of both the antenna portion and the semiconductor element, the antenna portion having a line width W 2 Conductive thin lines of 0.25 μm or more and 5.0 μm or less. That is, in the RF tag of embodiment 1, a part of the inlay of the RF tag is sandwiched between the base material and the adhesive layer. When the adhesive layer is peeled off from the antenna portion, the adhesive layer brings away the 1 st separation portion including at least a part of the conductive thin line, and the 2 nd separation portion including the other part of the conductive thin line other than the part of the conductive thin line remains on the base material. Thus, by tearing the adhesive layer from the base material, the inlay of the RF tag can be easily physically destroyed, and the information extraction preventing function can be realized.
In embodiment 1, the 1 st separation portion refers to a portion of the conductive thread constituting the antenna portion that is carried away by the adhesive layer, and the 2 nd separation portion refers to a portion of the conductive thread constituting the antenna portion that remains on the base material. That is, in embodiment 1, the conductive thin wire is not entirely taken away by the adhesive layer or entirely left on the base material, but is cut into the 1 st separation portion and the 2 nd separation portion when the adhesive layer is peeled from the antenna portion. Such 1 st and 2 nd separation portions can be formed by the adhesive strength between the conductive thin line and the adhesive layer or the base material layer constituting the antenna portion, the fineness of the conductive thin line, or by a void when the cross section of the conductive thin line forms the void, or the like.
When the adhesive layer is peeled from the antenna portion, the 1 st separation portion carried away by the adhesive layer may include the semiconductor element, and the 2 nd separation portion remaining on the base material may include the semiconductor element.
The 1 st separation unit and the 2 nd separation unit may be separated as follows: one of the conductive threads is separated at an arbitrary portion in the height direction, and a half of the conductive thread on the substrate side remains on the substrate and a half on the adhesive layer side is carried away by the adhesive layer side. In this case, the 1 st separation portion is a portion of the conductive thin line, including a portion on the adhesive layer side in the height direction of the conductive thin line, and the 2 nd separation portion is another portion of the conductive thin line, including another portion on the base material side corresponding to the portion on the adhesive layer side.
At this time, the length (thickness) in the height direction of the 1 st separation portion may be larger than the length (thickness) in the height direction of the 2 nd separation portion. For example, when the conductive thin line has a void, the conductive thin line is easily separated in the height direction at a portion where a large number of the void exists, in other words, at a portion where the density of the conductive thin line is low. As described later, in the case where the voids are distributed more on the substrate side in the conductive thin line, the length (thickness) in the height direction of the 1 st separation portion taken away by the adhesive layer side is larger than the length (thickness) in the height direction of the 2 nd separation portion remaining on the substrate side.
Fig. 1 shows a cross-sectional view showing one form of the RF tag 100 according to embodiment 1, and fig. 2 shows a plan view showing one form of the RF tag according to embodiment 1 before an adhesive layer is formed. The RF tag 100 includes a substrate 11, an antenna portion 13 formed on the substrate, and a semiconductor element 14 electrically connected to the antenna portion 13. The antenna portion 13 and the semiconductor element 14 are electrically connected via the collector portion 12 (the bonding portion 121). The current collector 12 is electrically connected to the antenna 13, and refers to a portion that collects electricity generated by the antenna 13 in response to a predetermined frequency toward the semiconductor element 14. The bonding portion 121 is a portion of the current collector 12 bonded to the semiconductor element 14. Hereinafter, it is not necessary to distinguish between the collector 12 and the junction 121, and the portion related to the collector 12 (junction 121) may be referred to as "collector 12". Even when only "collector 12" is described, the portion of collector 12 other than joint 121 is not referred to.
Fig. 3 shows an enlarged view of S1a of fig. 2. In fig. 2, the current collector 12 has two or more joining portions 121 with their distal ends facing each other. The semiconductor element 14 can be electrically bonded to the bonding portion 121 by an anisotropic conductive adhesive 15 such as an anisotropic conductive paste or an anisotropic conductive film. The antenna portion 13 is electrically connected to the joint portion 121, and is capable of receiving radio waves of a predetermined frequency, transmitting an electric signal to the semiconductor element 14, or transmitting radio waves of a predetermined frequency based on an output of the semiconductor element 14. Note that, in fig. 3, the collector 12 is shown in a trapezoidal shape, but the shape of the collector 12 is not limited thereto. As an example, the collector 12 in fig. 3 has an area equal to or several times the projected area of the semiconductor element in plan view, and preferably, the collector 12 is almost covered when the semiconductor element 14 is bonded to the bonding portion 121. In this case, the current collector 12 may be said to be substantially constituted only by the joint 121.
Although fig. 1 shows the RF tag 100 as a passive tag that does not have a battery and operates using radio waves received from the reader/writer as an energy source, the RF tag 100 of embodiment 1 may be an active tag that further has a battery (not shown) and uses its power as a power source for transmission/reception and internal circuits; a semi-passive tag having a battery as a power source of the sensor and other sensors built therein. In embodiment 1, the RF tag is a tag capable of transmitting and receiving a specific frequency by having the antenna 10. Accordingly, even a tag called an IC tag is included in the RF tag of embodiment 1 as long as the above configuration is satisfied.
The RF tag 100 of embodiment 1 has an adhesive layer 16 formed on a substrate so as to cover at least a part of both the antenna portion 13 and the semiconductor element 14. The adhesive layer 16 is also in contact with the substrate 11 at a portion of the substrate 11 where the antenna portion 13 and the semiconductor element 14 are not formed. The adhesive layer 16 has an adhesive force that brings at least either one of the semiconductor element 14 and at least a part of the antenna portion 13 away when peeled from the substrate 11. In other words, this means that, when the adhesive layer 16 is peeled off from the base material 11, the inlay made up of the semiconductor element 14 and the entire antenna portion 13 does not remain entirely on either the adhesive layer 16 or the base material 11. As a result, at least a part of the inlay is physically destroyed by tearing, and communication by the antenna unit 13 is not possible, so that information extraction from the used RF tag can be prevented.
The RF tag 100 of embodiment 1 is used by being attached to an object. An object to which the RF tag 100 is attached is referred to as an RF tag attached object. The object is not particularly limited, and examples thereof include commercially available products and packaging materials for products. The surface of the RF tag 100 that contacts the object may be the surface of the base material 11 or the surface of the adhesive layer 16. When the surface of the RF tag 100 that contacts the object is the surface of the adhesive layer 16, the adhesive layer 16 may be configured to have a 1 st adhesive surface that covers at least a part of both the antenna portion 13 and the semiconductor element 14, and a 2 nd adhesive surface opposite to the 1 st adhesive surface. In the RF tag 100, an adhesive layer, not shown, may be provided on the surface side of the base material 11 so as to be capable of being attached to an adhesive surface of an object.
As described above, the method for using the RF tag 100 according to embodiment 1 includes the steps of: by peeling the base material 11 and the adhesive layer 16, the 1 st separation portion including at least a part of the conductive thin line constituting the antenna portion 13 is carried away, and the 2 nd separation portion including the other part of the conductive thin line except the part of the conductive thin line remains on the base material 11, thereby destroying the RF tag 100. In this destruction step, the RF tag 100 is peeled off from the object in a state where at least a part of the antenna portion 13 remains on the object. Thus, the information extraction preventing function is realized. The method for using the RF tag 100 according to embodiment 1 may further include a step of attaching the RF tag 100 to the object before the destruction step, and a step of transmitting and receiving radio waves using the RF tag 100 attached to the object. Instead of the step of attaching the RF tag 100 to the object, the step of preparing an RF tag-attached object to which the RF tag 100 is attached may be performed.
In addition, in the case of destroying the RF tag 100, the semiconductor element 14 is preferably taken away by the adhesive layer 16, so that the function of the RF tag 100 can be completely destroyed, and information extraction due to the reuse of the RF tag can be prevented. The following describes each structure in detail.
[ adhesive layer ]
As a form of the adhesive layer 16 for realizing the information extraction preventing function as described above, it is preferable that the adhesion force of the adhesive layer 16 is at least higher than the breaking strength of the conductive thin wire constituting at least a part of the antenna portion 13.
The following modes are also exemplified. For example, when the adhesive layer 16 covers the antenna portion 13 and the semiconductor element 14, there are a configuration in which the adhesive layer 16 has a higher adhesion force to the antenna portion 13 than the base material 11, the adhesive layer 16 has a lower adhesion force to the semiconductor element 14 than the base material 11, the adhesive layer 16 has a lower adhesion force to the antenna portion 13 than the base material 11, and the adhesive layer 16 has a higher adhesion force to the semiconductor element 14 than the base material 11, respectively.
In the above-described embodiment, it is also preferable that the breaking strength of the conductive thin wire constituting at least a part of the antenna portion 13 is lower than the adhesion force between the adhesive layer 16 and the antenna portion. By making the breaking strength of the conductive thin wire constituting at least a part of the antenna portion 13 lower than the adhesion force between the antenna portion and the adhesive layer 16, the breakage of the conductive thin wire constituting a part of the antenna portion 13 is promoted when the adhesive layer 16 is peeled off, and an information extraction preventing function by the breakage of the RF tag, which is an effect of the present utility model, is realized.
When the adhesive layer 16 covers the antenna portion 13 but does not cover the semiconductor element 14, the adhesive layer 16 may have a higher adhesion force to the antenna portion 13 than the substrate 11 does to the antenna portion 13. When the adhesive layer 16 covers the semiconductor element 14 without covering the antenna portion 13, the adhesive force of the adhesive layer 16 to the semiconductor element 14 is higher than the adhesive force of the base material 11 to the semiconductor element 14.
When the adhesive layer 16 covers the antenna portion 13, the adhesive layer 16 may cover the entire antenna portion 13 or a part of the antenna portion 13. Even in a form of covering a part of the antenna portion 13, when the adhesive layer 16 is peeled from the base material 11, communication by the antenna portion 13 is not possible due to a part of the antenna portion 13 being defective. The form of the adhesive layer 16 covering a part of the antenna portion 13 is not particularly limited, and examples thereof include a form of covering a side of the antenna portion 13 away from the semiconductor element 14 and a form of covering a side of the antenna portion 13 close to the semiconductor element 14.
Even when the adhesive layer 16 covers a part of the antenna portion 13, it is preferable that the breaking strength of the antenna portion 13 is lower than that of the adhesive layer 16 as described above, and the information extraction preventing function as an effect of the present utility model can be realized.
The adhesion force of the adhesive layer 16 to the antenna portion 13 or the semiconductor element 14 can be adjusted by the adhesive composition constituting the adhesive layer 16, and conditions such as heating and pressurizing at the time of adhesion. The adhesion force of the substrate 11 to the antenna portion 13 or the semiconductor element 14 can be adjusted according to the material constituting the substrate 11, according to the composition constituting the outermost layer when the substrate 11 has the 1 st outermost layer or the like described later, or according to the conditions when the antenna portion 13 and the collector portion 12 (the joint portion 121) are formed.
The adhesion force of the substrate 11 to the semiconductor element 14 can be said to be the adhesion force of the substrate 11 to the current collector 12 (the joint 121) formed on the substrate 11. When an Anisotropic Conductive Paste (ACP) or an Anisotropic Conductive Film (ACF) for bonding the semiconductor element 14 to the bonding portion 121 is used, the adhesive force of the region directly bonded to the substrate is also included in the adhesive force of the substrate 11 to the semiconductor element 14.
The adhesion force of the adhesive layer 16 to the antenna portion 13 or the adhesion force of the base material 11 to the antenna portion 13 can be said to be the adhesion force of the adhesive layer 16 to the conductive pattern constituting the antenna portion 13 or the adhesion force of the base material 11 to the conductive pattern constituting the antenna portion 13.
As will be described later, when the antenna portion 13 or the collector portion 12 (the joint portion 121) includes a conductive pattern having conductive thin lines, it is considered that the width of the conductive thin lines of the antenna portion 13 or the collector portion 12 (the joint portion 121) is set to a value described later from the standpoint that at least a part of the inlay is easily physically broken when the adhesive layer 16 is peeled from the base material 11. This makes it possible to form the conductive thin wire relatively thin, and breakage is likely to occur when the conductive thin wire is torn off.
The material for forming the adhesive layer is not particularly limited, and examples thereof include adhesives based on suitable polymers such as rubber-based compounds, acrylic-based compounds, vinyl alkyl ether-based compounds, silicone-based compounds, polyester-based compounds, polyurethane-based compounds, polyether-based compounds, polyamide-based compounds, and styrene-based compounds; amorphous thermoplastic resins such as polymethyl methacrylate resin, polycarbonate resin, polystyrene resin, cycloolefin resin (COP), crosslinked polyethylene resin, polyvinyl chloride resin, polyarylate resin, polyphenylene ether resin, modified polyphenylene ether resin, polyetherimide resin, polyethersulfone resin, polysulfone resin, and polyetherketone resin; crystalline thermoplastic resins such as polyethylene terephthalate (PET) resin, polyethylene naphthalate resin, polyethylene resin, polypropylene resin, polybutylene terephthalate resin, aromatic polyester resin, polyacetal resin, and polyamide resin; photocurable resins such as acrylic resins, epoxy resins, and urethane resins, and thermosetting resins.
The thickness of the adhesive layer is preferably 0.5 to 10. Mu.m, more preferably 1 to 5. Mu.m. By setting the thickness of the adhesive layer to 0.5 μm or more, the adhesion to the current collector 12 (the joint 121) and/or the antenna 13 tends to be reduced due to the influence of the wiring height. In addition, the adhesive layer tends to have a thickness of 10 μm or less, so that the adhesive force tends to be more stable. Further, the thickness of the adhesive layer is preferably in the range of 1 to 5 μm, since the adhesion to the current collector 12 (the joint 121) and/or the antenna 13 can be maintained, the adhesion of the RF tag itself is stable.
[ substrate ]
For the substrate 11, a transparent substrate can be used, and an opaque substrate can be used. Among them, a transparent base material is preferably used from the viewpoint of not making the RF tag 100 noticeable and not impairing the appearance of the object to be attached. In the RF tag of the present utility model, when the base material 11 is transparent, if the RF tag of the present utility model is peeled off after being attached to an object to be attached via the adhesive layer 16, a part of the conductive thin line constituting the antenna portion 13 is separated to both the object to be attached and the peeled RF tag, and therefore, the antenna portion 13 is broken and separated, and the intention of a third person other than the intended person to copy the RF tag by peeling is weakened, which is preferable.
Herein, "transparent" means: the visible light transmittance is preferably 80% or more, more preferably 90% or more, and still more preferably 95% or more. Here, the visible light transmittance can be in accordance with JIS K7361-1: 1997.
The base material 11 may be composed of 1 material, or may be composed of two or more materials stacked. In the case where the substrate is a multilayer body in which two or more materials are laminated, the substrate 11 may be a substrate in which organic substrates are laminated to each other or a substrate in which inorganic substrates are laminated to each other, or may be a substrate in which organic substrates and inorganic substrates are laminated to each other.
Examples of the form of the substrate 11 include a single-layer sheet having a core layer, a laminated sheet having a core layer and a 1 st outermost layer, a laminated sheet having a core layer and a 2 nd outermost layer, a laminated sheet having a 1 st outermost layer and a 2 nd outermost layer, and a laminated sheet having a core layer, a 1 st outermost layer and a 2 nd outermost layer. In the laminate sheet, other layers may be provided between the core layer and the 1 st outermost layer, between the core layer and the 2 nd outermost layer, or between the 1 st outermost layer and the 2 nd outermost layer.
In addition, in the case where the base material 11 is a single-layer sheet of a core layer, the current collecting portion 12 (the joint portion 121) and the antenna portion 13 are formed on the surface of the core layer. When the base material 11 is a laminated sheet, the 1 st outermost layer is a layer constituting a surface formed by the current collector 12 (joint 121) and the antenna 13, and the 2 nd outermost layer is a back surface of the 1 st outermost layer. However, in the case where inlays are formed on both surfaces of the base material 11, the current collecting portion 12 (the joint portion 121) and the antenna portion 13 may be formed on the 2 nd outermost layer. The structure of each layer is described in detail below.
(core layer)
The material constituting the core layer is not particularly limited, and a material contributing to the improvement of the mechanical strength of the base material is preferable. The material of the core layer is not particularly limited, and examples thereof include a transparent inorganic substrate such as glass; transparent organic substrates such as acrylates, methacrylates, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonates, polyarylates, polyvinylchloride, polyethylene, polypropylene, polystyrene, nylon, aromatic polyamides, polyetheretherketone, polysulfone, polyethersulfone, polyimide, and polyetherimide. Among them, the use of polyethylene terephthalate provides more excellent productivity (cost reduction effect) for manufacturing antennas. In addition, by using polyimide, the heat resistance of the antenna is more excellent. When polyimide is used, so-called transparent polyimide having excellent light transmittance to visible light is more preferably used. Further, by using polyethylene terephthalate and/or polyethylene naphthalate, adhesion between the base material and the conductive thin wire is more excellent.
The core layer may be made of 1 material or two or more materials. In the case where the core layer is a multilayer body in which two or more materials are laminated, the substrate may be a substrate in which organic substrates are laminated to each other or a substrate in which inorganic substrates are laminated to each other, or may be a substrate in which organic substrates and inorganic substrates are laminated to each other.
The thickness of the core layer is preferably 5 μm or more and 500 μm or less, more preferably 10 μm or more and 100 μm or less.
(the 1 st outermost layer)
When the base material 11 is a laminate, the 1 st outermost layer is a layer constituting a surface formed by the power supply and collection portion 12 (the joint portion 121) and the antenna portion 13. The material constituting the 1 st outermost layer is not particularly limited, but is preferably a material that contributes to improvement of adhesion between the core layer and the current collector 12 (the joint 121) and adhesion between the core layer and the antenna portion 13. In the case where the base material 11 has the 1 st outermost layer and the 2 nd outermost layer and does not have the core layer, the 1 st outermost layer is preferably a material that contributes to improving the adhesion between the 2 nd outermost layer and the current collector 12 (the joint 121) and the adhesion between the 2 nd outermost layer and the antenna portion 13.
The component contained in the 1 st outermost layer is not particularly limited, and examples thereof include silicon compounds (for example, (poly) silanes, (poly) silazanes, (poly) siloxanes, silicon carbide, silicon oxide, silicon nitride, silicon chloride, silicate, zeolite, silicide, and the like), aluminum compounds (for example, aluminum oxide, and the like), magnesium compounds (for example, magnesium fluoride), and the like.
Among them, silicon compounds are preferable, and silicones are more preferable. By using such a component, the adhesiveness of the 1 st surface 10a is improved, and the transparency and durability of the RF tag 100 are also liable to be further improved.
The silicon compound is not particularly limited, and examples thereof include a condensate of a polyfunctional organosilane, a polycondensate obtained by hydrolysis reaction of a polyfunctional organosilane or an oligomer thereof with polyvinyl acetate, and the like.
The polyfunctional organosilane is not particularly limited, and examples thereof include difunctional organosilanes such as dimethyldimethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diphenyldimethoxysilane, and diphenyldiethoxysilane; trifunctional organosilanes such as methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, and the like; tetrafunctional organosilanes such as tetramethoxysilane and tetraethoxysilane.
The 1 st outermost layer can be formed by a method of applying a composition containing the components contained in the 1 st outermost layer to the core layer and drying the same. The 1 st outermost layer may be formed by a vapor phase film forming method such as PVD or CVD. The composition for forming the 1 st outermost layer may contain a dispersant, a surfactant, a binder, and the like as necessary.
The thickness of the 1 st outermost layer is preferably 0.01 μm or more and 100 μm or less, more preferably 0.01 μm or more and 10 μm or less, still more preferably 0.01 μm or more and 1 μm or less. When the thickness of the 1 st outermost layer is within the above range, the transparency and durability of the RF tag 100 tend to be further improved in addition to the adhesion.
By stacking the 1 st outermost layer on the core layer, when the collector 12 (joint 121) and the antenna 13 are formed by sintering the metal component in the ink by firing means such as plasma, for example, etching of the part of the core layer not covered by the collector 12 (joint 121) and the antenna 13 by plasma or the like can be prevented.
In order to prevent breakage of the current collecting portion 12 (the joint portion 121) and the antenna portion 13 due to static electricity, the 1 st outermost layer preferably has an antistatic function. In order to provide the 1 st outermost layer with an antistatic function, the 1 st outermost layer preferably contains at least any one of a conductive inorganic oxide and a conductive organic compound.
(2 nd outermost layer)
When the base material 11 is a laminate, the 2 nd outermost layer refers to the back surface of the 1 st outermost layer. The component contained in the 2 nd outermost layer is not particularly limited, and examples thereof include melamine compounds, alkyd compounds, fluorine compounds, silicone compounds, polyethylene waxes, fatty acids, and fatty acid esters. Among them, melamine compounds, alkyd compounds, fluorine compounds, and silicone compounds are preferable, and melamine compounds and alkyd compounds are more preferable. By using such a component, the transparency and durability of the RF tag 100 tend to be further improved.
The thickness of the 2 nd outermost layer is preferably 0.01 μm or more and 100 μm or less, more preferably 0.01 μm or more and 10 μm or less, still more preferably 0.01 μm or more and 1 μm or less. When the thickness of the 2 nd outermost layer is within the above range, the transparency and durability of the RF tag 100 tend to be further improved.
(other layers)
The other layers disposed between the core layer and the 1 st outermost layer, between the core layer and the 2 nd outermost layer, or between the 1 st outermost layer and the 2 nd outermost layer are not particularly limited, and examples thereof include an easy-to-adhere layer. The easy-to-adhere layer is used for the purpose of improving the adhesion between the core layer and the 1 st outermost layer, the adhesion between the core layer and the 2 nd outermost layer, or the adhesion between the 1 st outermost layer and the 2 nd outermost layer.
[ Joint ]
The bonding portion 121 is located at the tip of the collector 12 and is a portion bonded to the semiconductor element 14. The bonding portion 121 (collector portion 12) electrically connects the antenna portion 13 and the semiconductor element 14, and electrically bonds the antenna portion 13 and the semiconductor element 14, respectively.
The structure of the collector 12 is not particularly limited, and examples thereof include a structure in which a collector 12 having a size substantially covered by the semiconductor element 14 is provided so as to connect the plurality of antenna portions 13 (see fig. 2), a structure in which the semiconductor element 14 is bonded to a part of the loop-shaped collector 12, the antenna portion 13 is provided on the outer periphery of the loop-shaped collector 12, and the collector 12 is provided at any position of 1 antenna portion 13. The bonding position (bonding portion 121) of the current collector 12 to the semiconductor element 14 is not particularly limited, but is preferably a position where the tip of the current collector 12 faces.
The antenna of embodiment 1 is not limited to the structure of the λ/2 dipole antenna, and may have other antenna structures such as a ground type λ/4 monopole antenna, and accordingly, the collector 12 (joint 121) and the antenna 13 may take various forms.
The form of the conductive member constituting the current collector 12 (hereinafter, also referred to as "1 st conductive pattern 300") is not particularly limited, and any form of conductive thin wire may be used in addition to the form in which the conductive member is coated on the entire surface. Here, the 1 st conductive pattern 300 is a continuous pattern, and has conductivity from any point in the pattern to any other point. Further, the collector 12 may have one or more 1 st conductive patterns 300 electrically independent.
The 1 st conductive pattern 300 including conductive thin lines is not particularly limited, and examples thereof include a mesh pattern formed by intersecting a plurality of conductive thin lines in a network shape, and other patterns in which the 1 st conductive thin lines intersect to maintain conductivity. The 1 st conductive pattern 300 may be a regular pattern or an irregular pattern. The conductive thin lines constituting the 1 st conductive pattern 300 may be straight lines or curved lines.
The shape of the 1 st opening 301 of the 1 st conductive pattern 300 in which the conductive thin lines are formed in a network shape is not particularly limited, and examples thereof include triangles; quadrangles such as square, rectangle, diamond, etc.; hexagonal; or a shape formed by combining a plurality of polygons.
Further, if the cross-sectional structure of the 1 st conductive thin line constituting the 1 st conductive pattern, which varies in width and thickness in the longitudinal direction and is perpendicular to the extending direction, is the same as the 2 nd conductive pattern 400 constituting the antenna portion 13 described later, breakage of the RF tag is promoted at the time of peeling, which is preferable.
[ antenna portion 13 ]
The antenna portion 13 is electrically connected to the collector portion 12 (the connection portion 121), and has a 2 nd conductive pattern 400 for functioning as an antenna. Here, the 2 nd conductive pattern 400 is a continuous pattern, and has conductivity from any point in the pattern to any other point. The antenna portion 13 may have a plurality of electrically independent 2 nd conductive patterns 400.
The antenna portion 13 has various shapes according to the kind thereof. The type of the antenna portion 13 is not particularly limited, and examples thereof include dipole antennas generating electric current by a change in electric field, electric field antennas such as patch antennas, and magnetic field antennas such as loop antennas generating electric current by a change in magnetic field.
In addition, a known shape can be used as the outer shape of the antenna portion 13. For example, the linear dipole antenna is not limited to a linear type, and various known shapes such as a turn-back type, a meander type, a three-dimensional spiral type, and a planar spiral type are given. The patch antenna has a shape having a cutout in any shape such as a polygon and a circle. The antenna portion 13 may be formed by combining a plurality of the above-described shapes.
Further, the antenna portion 13 preferably has a 2 nd conductive pattern 400, and the 2 nd conductive pattern 400 has a 2 nd conductive thin line. Fig. 4 shows an enlarged view of a portion S3 in fig. 3 as one embodiment of the antenna unit 13. In fig. 5, the 2 nd conductive pattern 400 is shown as a grid pattern formed by crossing a plurality of 2 nd conductive thin lines in a network shape, but the 2 nd conductive pattern 400 is not limited to this, and may be another pattern in which the 2 nd conductive thin lines cross to maintain conductivity. The 2 nd conductive pattern 400 may be a regular pattern or an irregular pattern. The 2 nd conductive thin line may be a straight line or a curved line.
The shape of the 2 nd opening 401, which is a portion where the 2 nd conductive pattern 400 is not formed, is not particularly limited, and may be triangular, for example; quadrangles such as square, rectangle, diamond, etc.; pentagonal; hexagonal; or a shape formed by combining a plurality of polygons.
Fig. 2 shows an example of the structure of the RF tag in the case where the antenna unit 13 is an electric field antenna. In fig. 2, two antenna portions 13 are formed around a relatively small collector portion 12 having a size substantially shielded by a semiconductor element 14, and the antenna portions 13 have an outer shape like a rectangle. In fig. 5, the antenna portion 13 is preferably formed by a mesh pattern composed of the 2 nd opening portion 401 and the 2 nd conductive pattern 400, rather than a form in which the entire surface of the plane is coated with a conductive layer. This ensures the transparency of the region where the antenna portion 13 is formed, while ensuring the function of the antenna portion as an electric field antenna.
(1 st conductive pattern 300 and 2 nd conductive pattern 400)
The 1 st conductive pattern 300 and the 2 nd conductive pattern 400 contain conductive components. The conductive component is not particularly limited, and examples thereof include conductive metals and conductive polymers. In addition, the 1 st conductive pattern 300 and the 2 nd conductive pattern 400 may contain a non-conductive component. The conductive metal is not particularly limited, and examples thereof include gold, silver, copper, and aluminum. Among them, silver or copper is preferable, and copper which is relatively inexpensive is more preferable. By using such a conductive metal, the conductivity of the transparent antenna tends to be more excellent. As the conductive polymer, a known conductive polymer can be used, and polyacetylene, polythiophene, and the like can be used.
The non-conductive component is not particularly limited, and examples thereof include metal oxides, metal compounds, and organic compounds. More specifically, the non-conductive components are derived from components contained in ink described later, and examples thereof include metal oxides, metal compounds, and organic compounds that remain in the fired conductive thin lines.
The content ratio of the conductive component in each of the 1 st conductive pattern 300 and the 2 nd conductive pattern 400 is preferably 50% by mass or more, more preferably 60% by mass or more, and still more preferably 70% by mass or more, independently of each other. The upper limit of the content ratio of the conductive component is not particularly limited, but is 100 mass%. The content ratio of the non-conductive component in each of the 1 st conductive pattern 300 and the 2 nd conductive pattern 400 is preferably 50% by mass or less, more preferably 40% by mass or less, and still more preferably 30% by mass or less, independently of each other. The lower limit of the content ratio of the nonconductive component is not particularly limited, but is 0 mass%.
(linewidth W)
When the 1 st conductive pattern 300 has the 1 st conductive thin line and the 2 nd conductive pattern 400 has the 2 nd conductive thin line, the line widths W of the 1 st conductive thin line and the 2 nd conductive thin line refer to the line widths W when the conductive thin line is projected onto the surface of the substrate 11 from the surface side where the conductive pattern is arranged of the substrate 11. In the conductive thin line having a trapezoidal cross section, the width of the surface of the conductive thin line contacting the substrate 11 is the line width W.
Line width W of 1 st conductive thread 1 Preferably 0.5 to 200. Mu.m, more preferably 1 to 150. Mu.m, still more preferably 2 to 100. Mu.m. By making the line width W of the 1 st conductive thin line 1 In the above range, the bondability tends to be further improved and the antenna characteristics such as the gain tend to be further improved. In addition, by making the line width W of the 1 st conductive thin line 1 The thickness is 200 μm or less, and thus the visibility of the 1 st conductive pattern 300 tends to be further reduced and the transparency of the collector 12 (the joint 121) tends to be further improved.
Line width W of the 2 nd conductive thin line 2 Preferably 0.25 to 7.5. Mu.m, more preferably 0.25 to 5.0. Mu.m, still more preferably 0.25 to 4.0. Mu.m, particularly preferably 0.50 to 3.0. Mu.m. By making the line width W of the 2 nd conductive thin line 2 When the thickness is 0.25 μm or more, the conductivity of the antenna portion 13 tends to be further improved. In addition, the decrease in conductivity due to oxidation, corrosion, or the like of the surface of the conductive thin wire can be sufficiently suppressed. On the other hand, by making the line width W of the 2 nd conductive thin line 2 When the thickness is 10.0 μm or less, the visibility of the 2 nd conductive pattern 400 tends to be further reduced, and the transparency of the antenna portion 13 tends to be further improved.
Further, line width W of 1 st conductive pattern 300 1 And/or line width W of the 2 nd conductive pattern 400 2 In the case where the line width W is not a constant value but a plurality of values, the whole line width W is preferable 1 And/or line width W 2 The above range is satisfied.
Further, line width W of 1 st conductive pattern 300 1 And/or line width W in the 2 nd conductive pattern 400 2 Preferably, the variation is performed with the predetermined line width as a central value. By varying the line width of the conductive thin line within a certain range, when the adhesive layer 16 is peeled from the RF tag 100, peeling stress concentrates on a portion having a relatively narrow line width, and the breakage of the portion can be promoted. Here, "fluctuation" means that the line width of the conductive thin line has a predetermined tolerance with respect to a specific line width targeted for the design value of the line width of the conductive thin line. For example, when the line width of the conductive thin line is within the range of the design value ±tolerance, stress concentrates on a portion of the conductive thin line where the tolerance is biased to the negative side, that is, a portion thinner than other portions, and the 1 st separation portion and the 2 nd separation portion are easily peeled off at the portion.
For this reason, the coefficient of variation CV of the line width of the conductive thin line in the plane of the antenna portion 13 W The (standard deviation/average value) is preferably 1% or more and 10% or less, and if 3% or more and 8% or less, the uniformity of the antenna portion 13 as a conductor can be maintained, and a part of the 1 st conductive pattern 300 and/or a part of the 2 nd conductive pattern 400 is broken at the time of peeling, so that it is more preferable, and if 4% or more and 7% or less, it is further preferable.
(height T)
Height T of 1 st conductive thread 1 And the height T of the 2 nd conductive thread 2 Preferably 0.05 to 1.0. Mu.m, more preferably 0.07 to 0.8. Mu.m, still more preferably 0.1 to 0.5. Mu.m. By making the height T 1 And T 2 When the particle size is 0.05 μm or more, the conductivity tends to be further improved. In addition, the decrease in conductivity due to oxidation, corrosion, or the like of the surface of the conductive thin wire tends to be sufficiently suppressed. On the other hand, by making the height T 1 And T 2 When the thickness is 1.0 μm or less, the transparency tends to be high in a wide viewing angle.
Further, at the height T of the 1 st conductive pattern 300 1 And/or the height T of the 2 nd conductive pattern 400 2 In the case where a plurality of values are not constant, it is preferable that the entire height T 1 And/or height T 2 The above range is satisfied.
Height T of 1 st conductive pattern 300 1 And/or the height T of the 2 nd conductive pattern 400 2 Preferably, the change is performed with the predetermined height as a center value. By varying the height of the conductive thin line within a certain range, when the adhesive layer 16 is peeled off from the RF tag 100, the peeling stress concentrates on the thin portion of the conductive thin line, and the breakage of the portion can be promoted. Here, "fluctuation" means that the height of the conductive thin line has a predetermined tolerance with respect to a specific height targeting a design value of the line width of the conductive thin line. For example, when the height of the conductive thin wire is within the range of the design value ±tolerance, stress concentrates on the tolerance of the conductive thin wire to the negative side The 1 st separation portion and the 2 nd separation portion are easily peeled off at a portion, i.e., a portion thinner than the other portions.
For this reason, the coefficient of variation CV of the height of the conductive thin line in the plane of the antenna portion 13 T The (standard deviation/average value) is preferably 1% or more and 10% or less, and if 3% or more and 8% or less, the uniformity of the antenna portion 13 as a conductor can be maintained, and a part of the 1 st conductive pattern 300 and/or a part of the 2 nd conductive pattern 400 is broken at the time of peeling, so that it is more preferable, and if 4% or more and 7% or less, it is further preferable.
(gap G)
Gap G of 1 st conductive thread 1 Preferably 0.5 to 25. Mu.m, more preferably 1.0 to 10. Mu.m, still more preferably 2.0 to 7.0. Mu.m. By making the gap G 1 In the above range, the bondability tends to be further improved and the antenna characteristics such as the gain tend to be further improved. Further, the gap G is a distance between the conductive thin lines.
Gap G of the 2 nd conductive thin line 2 Preferably 20 to 1000. Mu.m, more preferably 40 to 750. Mu.m, still more preferably 60 to 300. Mu.m. By making the gap G 2 When the thickness is 20 μm or more, the transparency of the antenna portion 13 tends to be further improved. In addition, by making the gap G 2 And 1000 μm or less, thereby further improving the conductivity.
In addition, a gap G between the 1 st conductive patterns 300 1 And/or the gap G of the 2 nd conductive pattern 400 2 In the case where the gap G is not a constant value but a plurality of values, it is preferable that all of the gaps G 1 And/or gap G 2 The above range is satisfied.
(area occupancy S)
Area occupancy S of 1 st conductive pattern 300 1 Preferably 30 to 90%, more preferably 30 to 80%, even more preferably 40 to 80%, and particularly preferably 50 to 80%. By making the area occupancy S 1 In the above range, the bondability tends to be further improved and the antenna characteristics such as the gain tend to be further improved.
2 nd conductiveArea occupancy S of sex pattern 400 2 Preferably 0.1 to 7.0%, more preferably 0.5 to 5.0%, and even more preferably 1.0 to 3.0%. By making the area occupancy S 2 The amount is 0.1% or more, and the characteristics of the antenna portion 13 tend to be further improved. In addition, by making the area occupancy S 2 The transparency of the antenna portion 13 tends to be further improved by being 7.0% or less.
The "area occupancy S of the conductive pattern" can be calculated for the region on the substrate 11 where the conductive pattern is formed by the following equation. The region on the substrate 11 where the conductive pattern is formed is a region including no portion where the conductive pattern is not formed, for example, an edge portion where the conductive pattern is not formed is removed.
Area occupancy s= (area occupied by conductive pattern/area of substrate 11) ×100
The line width, height, gap, pitch, and occupied area of the conductive pattern can be confirmed by observing the antenna cross section and surface with an electron microscope or the like. The line width, gap, and pitch of the conductive pattern can also be observed by a laser microscope or an optical microscope. As a method of adjusting the line width, height, gap, pitch, and occupied area of the conductive pattern to desired ranges, a method of adjusting the grooves of a plate used in the method of manufacturing an antenna, a method of adjusting the average particle diameter of metal particles in ink, and the like, which will be described later, are given.
(shape)
When the 1 st conductive pattern 300 has the 1 st conductive thin line and the 2 nd conductive pattern 400 has the 2 nd conductive thin line, the cross-sectional shapes of the 1 st conductive thin line and the 2 nd conductive thin line can be defined by the line width W and the thickness T of the conductive thin line.
Fig. 6 shows a schematic view of the cross-sectional shape of the conductive thin wire. The height from the interface between the base material 11 and the conductive thin line was defined as 0.50T and 0.90T based on the thickness T of the conductive thin line. Further, the width of the conductive thin line at the height of 0.50T is set to W 0.50 Conductive thin wire with height of 0.90TIs set to W 0.90 . At this time, W 0.50 /W 0 Preferably 0.70 to 0.99, more preferably 0.75 to 0.99 or less, and still more preferably 0.80 to 0.95. In addition, W 0.90 /W 0.50 Preferably 0.50 to 0.95, more preferably 0.55 to 0.90, and still more preferably 0.60 to 0.85. In the antenna of embodiment 1, W 0.50 /W 0 Preferably greater than W 0.90 /W 0.50 . That is, it is preferable that the width of the conductive thin line gradually decreases from the height position at the thickness of 0.50T from the interface of the conductive thin line on the substrate 11 side toward the height position at the thickness of 0.90T from the interface of the conductive thin line on the substrate 11 side.
By setting the shape of the conductive thin line as described above, the adhesion area between the adhesive layer 16 and the side surface of the conductive thin line is further increased, and the conductive thin line is likely to remain on the adhesive layer 16 side when the base material 11 and the adhesive layer 16 are peeled off. Therefore, the information extraction prevention function tends to be more easily realized.
(Pitch P)
Pitch P of 1 st conductive pattern 300 1 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the 1 st conductive pattern 300 1 A transmittance of 5 μm or more can be obtained. In addition, the 1 st conductive pattern 300 has a pitch P 1 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the 1 st conductive pattern 300 1 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. In the case where the 1 st conductive pattern 300 is a square grid pattern, the pitch P of the 1 st conductive pattern 300 having a line width of 1 μm is set to 1 The aperture ratio can be set to 99% with 200. Mu.m. Further, pitch P 1 Is to guide the distance between the electric thin lines (gap G 1 ) And line width W 1 A kind of electronic device.
Pitch P of the 2 nd conductive pattern 400 2 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the 2 nd conductive pattern 400 2 At least 5 μm, good results can be obtainedGood transmittance. In addition, the pitch P of the 2 nd conductive pattern 400 2 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the 2 nd conductive pattern 400 2 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. Further, pitch P 2 Is to guide the distance between the electric thin lines (gap G 2 ) And line width W 2 A kind of electronic device.
(Cross-sectional Structure)
Preferably, the 1 st conductive thread and/or the 2 nd conductive thread has a distribution in a cross section orthogonal to the extending direction, the conductive thread having a void. If the conductive thin lines have voids and are distributed in the height direction, the strength of the voids decreases when the adhesive layer 16 is peeled off from the RF tag 100, and therefore, the 1 st conductive thin line and/or the 2 nd conductive thin line are likely to be broken in the thickness direction. That is, in the RF tag of the present utility model, when the adhesive layer 16 is peeled off from the base material 11, the adhesive layer 16 can carry away at least a part of the 1 st conductive thin line and/or the 2 nd conductive thin line in the thickness direction, which is preferable.
Fig. 7 shows a schematic diagram showing a cross-sectional structure of the conductive thin wire. In fig. 7, the maximum thickness T of the conductive thin line (hereinafter also simply referred to as "thickness T") refers to the maximum thickness in consideration of the surface roughness. When the interface is uneven and it is difficult to measure the thickness, the distance between the intersection point between the straight line connecting the two points at the two ends of the interface and the perpendicular bisector and the intersection point between the perpendicular bisector and the outer surface of the conductive thin line is set to be T. In fig. 7, 0.20T is a position of the conductive thin line 200 at a distance of 0.20×thickness T from the interface on the transparent substrate 21 side in the vertical direction of the interface. The 0.50T is a position of the conductive thin line 200 at a distance of 0.50×thickness T from the interface on the transparent substrate 21 side in the vertical direction of the interface. The 0.80T is a position of the conductive thin line 200 at a distance of 0.80×thickness T from the interface on the transparent substrate 21 side in the vertical direction of the interface.
The gaps of the conductive fine wires are fine with the conductive fine wiresIn a cross section of the conductive thin wire having a direction orthogonal to the extending direction of the wire, the conductive thin wire cross section is S M And the total void cross-sectional area included in the cross-section of the conductive thin line is S Vtotal At the time S Vtotal /S M Preferably from 0.10 to 0.40. If the ratio is within this range, the reduction in the breaking strength due to the void portion can be significantly reduced, and is preferably 0.13 or more and 0.37 or less, more preferably 0.15 or more and 0.35 or less.
The voids in the cross section of the conductive thin wire are preferably distributed in a biased manner, and may be biased toward the interface of the conductive thin wire on the side of the substrate 11, or may be biased toward the surface side of the conductive thin wire (the interface side between the conductive thin wire and the adhesive layer 16). Among them, when the interface on the substrate 11 side of the conductive thin line is biased, flexibility of the antenna portion 13 tends to be improved when the RF tag is used, and this is preferable. In addition, "having a void at the interface" means that "at least a part of the void is in contact with the transparent substrate 11", and in the case of having the above-described 1 st outermost layer, "having a void at the interface" means that "at least a part of the void is in contact with the 1 st outermost layer".
The principle that the flexibility of the antenna unit 13 can be improved when the RF tag is used is not particularly limited, and for example, the following can be considered. As in the RF tag 100, when deformation such as bending of two members having different mechanical properties such as rigidity and extensibility such as a transparent base material and a conductive thin wire is performed, stress concentrates on the interface, and disconnection and peeling occur at the interface. In this case, since voids are present at the interface between the conductive thin wires, stress is easily relaxed, and flexibility is further improved. Further, in view of making the flexibility of the conductive thin wire isotropic, it is preferable that the voids in the cross section of the conductive thin wire be uniformly distributed. From the standpoint of both, the following modes are preferable: the conductive thin wire has a void at an interface of the conductive thin wire on the transparent base material side, and a part of the void is distributed in a cross section of the conductive thin wire.
For the above-mentioned deviation and uniformity of the void, a conductive thin wire can be usedIs expressed as a void cross-sectional area in the thickness direction of the cross-section of (a). For example, at thickness T 2 In the conductive thin line of (2), 0.2T is reached from the interface of the conductive thin line near the substrate 11 side 2 The cross-sectional area of the void in the thickness region is S V0.2 At the time S V0.2 /S Vtotal An index indicating the proportion of voids present in the region of the conductive thin line on the interface side of the substrate 11 side. Such S V0.2 /S Vtotal Preferably from 0.15 to 0.60, more preferably from 0.18 to 0.55, and even more preferably from 0.20 to 0.50.
In addition, for example, at thickness T 2 In the conductive thin line of (2), 0.8T is reached from the interface of the conductive thin line near the substrate 11 side 2 The cross-sectional area of the void in the thickness region is S V0.8 At the time S V0.8 /S Vtotal An index indicating the proportion of voids present in the region of the conductive thin line other than the surface side. Such S V0.8 /S Vtotal The lower limit value is preferably 0.80 or more and 1.0 or less, more preferably 0.85 or more, and still more preferably 0.95 or more.
In addition, for example, (S) V0.2 +S V0.8 )/S Vtotal Is an index indicating the degree of deviation of the void on the interface side of the conductive thin line (the thickness region from the interface of the conductive thin line to 0.2T) with respect to the surface side of the conductive thin line (the thickness region from 0.8T to T). If there is a void on the interface side of the conductive thin line, that is, in the thickness region of 0.2T from the interface of the conductive thin line, and (S V0.2 +S V0.8 )/S Vtotal When the number exceeds 1.00, the voids are biased toward the interface side as compared with the surface side of the conductive thin line. (S) V0.2 +S V0.8 )/S Vtotal Preferably more than 1.00 and 1.60 or less, more preferably 1.10 or more and 1.55 or less, and still more preferably 1.15 or more and 1.50 or less. If (S) V0.2 +S V0.8 )/S Vtotal If the amount exceeds 1.00, the voids are biased toward the interface side of the conductive thin line, and thus the stress at the interface of the conductive thin line tends to be relaxed, and flexibility tends to be further improved. If (S) V0.2 +S V0.8 )/S Vtotal If the ratio is 1.60 or less, the void ratio of voids present in the region other than the interface becomes relatively large, and therefore the isotropy flexibility tends to be further improved. In addition, (S) V0.2 +S V0.8 )/S Vtotal At this time, the voids were all present in the thickness region from the interface of the conductive thin line on the substrate 11 side to 0.2T.
By the above procedure of S Vtotal /S M Is adjusted to a specific range, preferably further S V0.2 /S Vtotal 、S V0.8 /S Vtotal When the adhesive layer 16 is peeled from the base material 11, at least a part of the conductive thin line in the thickness direction can be taken away by adjusting the thickness to a specific range, and the RF tag 100 can be destroyed.
S in the present specification Vtotal /S M 、S V0.2 /S Vtotal 、S V0.8 /S Vtotal Sum (S) V0.2 +S V0.8 )/S Vtotal The calculation can be performed from an electron micrograph of a cross section of the conductive thin line perpendicular to the extending direction of the conductive thin line.
As described later, the antenna according to embodiment 1 can be formed by a printing method using ink, and the conductive thin wire formed by this method has the characteristic shape and cross-sectional structure described above. As other methods of forming the conductive thin line, a method using a nanoimprint method, a photolithography method, a method using other leads, and the like are also considered, but the conductive thin line produced by these methods is different from the conductive thin line formed by a printing method in the above-described shape and cross-sectional structure.
(visible light transmittance)
Visible light transmittance VT of the 1 st conductive pattern 300 1 Preferably 20 to 80%, more preferably 30% or more and 70% or less. Here, the visible light transmittance can be obtained by the method according to JIS K7361-1: 1997 to calculate the transmittance in the visible (360-830 nm) range.
Visible light transmittance Tr of the 2 nd conductive pattern 400 1 PreferablyIt is 80% to 99%, more preferably 90% to 99%.
The visible light transmittance of the antenna 10 tends to be improved by reducing the line width of the conductive pattern or increasing the area occupancy.
(transmittance adjusting section and color tone adjusting section)
The RF tag 100 according to embodiment 1 may further include a transmittance adjustment unit according to embodiment 2 and a color adjustment unit according to embodiment 3, which are described later. The details of the transmittance adjustment unit and the color adjustment unit will be described later, and specifically, the substrate 11 is a transparent substrate having the 1 st main surface and the 2 nd main surface, and the thin line pattern portion having conductive thin lines can satisfy any of the following conditions (i) and (ii).
Condition (i): the optical element comprises a transmittance adjustment section composed of a 2 nd pattern, the transmittance adjustment section being disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent base material and being formed on at least the periphery of the antenna section in a plan view, and the transmittance adjustment section having a visible light transmittance Tr at a position adjacent to the antenna section in a plan view 21 Visible light transmittance Tr with the antenna portion 1 Absolute value of difference (Tr) 21 －Tr 1 ) The I is below 10%.
Here, the "2 nd pattern" is a pattern different from the "2 nd conductive pattern" described above, and refers to the 2 nd pattern described in embodiment 2.
Condition (ii): the color adjustment unit is arranged on at least one of the 1 st main surface and the 2 nd main surface of the transparent substrate, is formed at least on the periphery of the antenna unit in a top view, and has chromaticity C at a position adjacent to the antenna unit in a top view 2 (L 2 ＊，a 2 ＊，b 2 And the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less.
Details of the transmittance adjustment unit and the color adjustment unit and preferable numerical ranges are described in embodiment 2 and embodiment 3.
[ semiconductor element ]
The semiconductor element 14 can be a known semiconductor element according to the use of the RF tag 100. The structure of the semiconductor element 14 is not particularly limited, and includes, for example, a storage unit, a power rectifying unit, a receiving unit, a control unit, a transmitting unit, and other functional units.
An example of the operation of each functional unit of the semiconductor element 14 and the RF tag 100 according to embodiment 1 in the passive type will be described. First, the antenna unit 13 of the RF tag 100 receives radio waves from a reader/writer, and generates electromotive force by electromagnetic induction or the like. Then, the semiconductor element 14 of the RF tag 100 is activated by the electromotive force. At this time, the power rectifying unit converts ac input to the antenna unit 13 into dc, and supplies power to the circuit of the semiconductor element 14. In parallel with this, the reception unit demodulates the carrier wave received from the reader/writer into a signal sequence, and transmits the signal sequence to the control unit. The control unit reads and writes information from and into the storage unit based on the signal sequence received from the reception unit, and transmits the information processing result to the transmission unit as the signal sequence. Here, the storage unit stores various information such as product information according to the use of the RF tag. Finally, the transmitting unit modulates the signal sequence received from the control unit into a carrier wave, and transmits the carrier wave from the antenna unit 13. Then, the antenna of the reader/writer receives the carrier wave and performs information processing. In embodiment 1, the RFID means a system including an RF tag and a reader/writer.
The frequency band that can be used by the RF tag 100 of embodiment 1 is not particularly limited, and examples thereof include an LF band (medium wave band): 120-130 kHz, HF band (short wave band): 13.56MHz, UHF band (ultrashort wave): 900MHz band, microwave: 2.45GHz band. The type of the antenna portion 13 can be appropriately adjusted according to the frequency band to be used. For example, a loop type antenna can be used when the HF band is used, and a dipole type antenna can be used when the UHF band is used.
The transmission/reception method that can be used for the RF tag 100 according to embodiment 1 is not limited to the radio wave method described above, and an electromagnetic coupling method in which a high frequency is applied to coils provided on the transmission side and the reception side, respectively, to cause mutual inductance to be generated, and an electromagnetic induction method in which a magnetic field generated near an antenna is caused to cause information to be carried and information to be exchanged may be used.
[ method for manufacturing RF tag ]
As a method for manufacturing the RF tag 100, for example, the following method is mentioned, which includes: a pattern forming step of forming a pattern on the base material 11 using an ink containing a metal component; a firing step of firing ink to form the collector portion 12 (the joint portion 121) and the antenna portion 13; a bonding step of bonding the semiconductor element 14 to the current collector 12 (bonding portion 121); and an adhesive layer forming step of forming an adhesive layer 16 covering at least a part of both the antenna portion 13 and the semiconductor element 14.
[ surface treatment Process ]
In the surface treatment step, from the viewpoint of adjusting the adhesion force between the base material 11 and the current collector 12 (joint 121) or the adhesion force between the base material 11 and the antenna portion 13, the 1 st outermost layer may be provided on one surface of the core layer, or the surface roughness of the base material 11 may be adjusted.
The method of forming the 1 st outermost layer is not particularly limited, and examples thereof include a method of forming a film of a component constituting the 1 st outermost layer on the 1 st surface 10a side of the core layer by a vapor phase film forming method such as PVD or CVD. Further, as another method, there is a method of forming the 1 st outermost layer by applying a composition containing a component forming the 1 st outermost layer to the 1 st surface 10a side surface of the core layer and drying it.
In general, the method for increasing the surface roughness of the smooth substrate 11 is not particularly limited, and examples thereof include a method in which an easy-to-adhere layer having a large surface roughness is provided between the core layer and the 1 st outermost layer, and the 1 st outermost layer is formed on the easy-to-adhere layer. Thus, the 1 st outermost layer reflects the surface roughness of the adhesive layer.
[ Pattern Forming Process ]
The patterning step is a step of patterning using an ink containing a metal component. The patterning step is not particularly limited as long as it is a plate printing method using a plate having grooves with a desired conductive pattern, and includes, for example: the ink transfer method includes a step of applying ink to the transfer medium surface, a step of bringing the transfer medium surface to which the ink is applied into contact with the convex surface of the relief plate by pressing the surface against the convex surface of the relief plate, and a step of transferring the ink remaining on the transfer medium surface to the surface of the base material 11 by bringing the surface of the transfer medium to which the ink remains into contact with the surface of the base material 11 by pressing the surface of the transfer medium. In addition, in the case where the 1 st outermost layer is formed on the substrate 11, the ink is transferred to the 1 st outermost layer surface.
(ink)
The ink used in the pattern forming step contains a conductive component and a solvent, and may contain a surfactant, a dispersant, a reducing agent, and the like as necessary. In the case where the conductive component is a metal component, the metal component may be contained in the ink in the form of metal particles or in the form of a metal complex. The metal element contained in the metal component is not particularly limited, and examples thereof include gold, silver, copper, and aluminum. Among them, silver or copper is preferable, and copper is more preferable.
The average primary particle diameter of the metal particles is preferably 100nm or less, more preferably 50nm or less, and still more preferably 30nm or less. The lower limit of the average primary particle diameter of the metal particles is not particularly limited, and examples thereof include 1nm or more. By setting the average primary particle diameter of the metal particles to 100nm or less, the line width W of the conductive thin line can be made finer. The "average primary particle diameter" is a particle diameter of each metal particle (so-called primary particle), and is distinguished from an average secondary particle diameter, which is a particle diameter of an aggregate (so-called secondary particle) formed by aggregation of a plurality of metal particles.
The metal particles are not particularly limited, and examples thereof include metal oxides such as copper oxide, metal compounds, core/shell particles in which the core is copper and the shell is copper oxide. The morphology of the metal particles can be appropriately determined from the viewpoints of dispersibility and sinterability.
The content of the metal particles in the ink is preferably 1% by mass or more and 40% by mass or less, more preferably 5% by mass or more and 35% by mass or less, and still more preferably 10% by mass or more and 35% by mass or less, relative to the total mass of the ink composition.
The surfactant is not particularly limited, and examples thereof include a fluorine-based surfactant. By using such a surfactant, the coatability of the ink to the transfer medium (blanket) and the smoothness of the applied ink are improved, and a more uniform coating film tends to be obtained. The surfactant is preferably configured to disperse the metal component and to be less likely to remain during firing.
The content of the surfactant in the ink is preferably 0.01% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 5% by mass or less, and still more preferably 0.5% by mass or more and 2% by mass or less, relative to the total mass of the ink composition.
The dispersant is not particularly limited, and examples thereof include a dispersant that causes non-covalent bonding or interaction on the surface of a metal component and a dispersant that causes covalent bonding on the surface of a metal component. Examples of the functional group that is non-covalently bonded or interacted with each other include a dispersant having a phosphate group. By using such a dispersant, the dispersibility of the metal component tends to be further improved.
The content of the dispersant in the ink is preferably 0.1% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 20% by mass or less, and still more preferably 2% by mass or more and 10% by mass or less, relative to the total mass of the ink composition.
Examples of the solvent include alcohol solvents such as monohydric alcohol and polyhydric alcohol; an alkyl ether solvent; a hydrocarbon solvent; a ketone solvent; ester solvents, and the like. These may be used alone or in combination of 1 or more. For example, a combination of a monohydric alcohol having 10 or less carbon atoms and a polyhydric alcohol having 10 or less carbon atoms may be used. By using such a solvent, there is a tendency that the coatability of the ink to the transfer medium (blanket), the transferability of the ink from the transfer medium to the relief plate, the transferability of the ink from the transfer medium to the substrate, and the dispersibility of the metal component are all further improved. The solvent is preferably configured to disperse the metal component and to be less likely to remain during firing.
The content of the solvent in the ink is the remainder of the components such as the metal particles, the surfactant, the dispersant, and the like, and is, for example, preferably 50% by mass or more and 99% by mass or less, more preferably 60% by mass or more and 90% by mass or less, and still more preferably 70% by mass or more and 80% by mass or less, relative to the total mass of the ink composition.
In addition, from the viewpoint of adjusting the void amount in the conductive thin line by the decomposed gas or the like of these components generated during firing, the content of the above components contained in the ink can be appropriately adjusted.
[ firing step ]
In the firing step, for example, the metal component in the ink transferred to the surface of the substrate 11 is sintered to form the current collecting portion 12 (the joint portion 121) and the antenna portion 13. The firing is not particularly limited as long as the metal component can be fused to form a metal component sintered film. Firing may be performed in a firing furnace, for example, or may be performed using plasma, a heated catalyst, ultraviolet rays, vacuum ultraviolet rays, electron beams, infrared lamp annealing, flash lamp annealing, laser light, or the like. In the case where the obtained sintered film is easily oxidized, the firing is preferably performed in a non-oxidizing atmosphere. In the case where it is difficult to reduce a metal oxide or the like by only a reducing agent that can be contained in the ink, firing is preferably performed in a reducing atmosphere.
In the firing step, the metal component is fired from the surface side, and the volatile component in the ink is volatilized at any time, so that the conductive thin wire having a void distribution in the cross section can be obtained, which is preferable.
The non-oxidizing atmosphere is an atmosphere containing no oxidizing gas such as oxygen, and includes an inert atmosphere and a reducing atmosphere. The inert atmosphere is an inert gas atmosphere filled with, for example, argon, helium, neon, nitrogen, or the like. The reducing atmosphere is an atmosphere in which a reducing gas such as hydrogen or carbon monoxide is present. These gases may be filled in a firing furnace, and an ink coating film (dispersion coating film) may be fired as a closed system. The firing furnace may be a flow system, and the dispersion-coated film may be fired while flowing the gases. In the case of baking the dispersion-coated film in a non-oxidizing atmosphere, it is preferable to temporarily evacuate the baking furnace to remove oxygen in the baking furnace and replace it with a non-oxidizing gas. The firing may be performed under a pressurized atmosphere or under a reduced pressure atmosphere.
The firing temperature is not particularly limited, but is preferably 20 ℃ or higher and 400 ℃ or lower, more preferably 50 ℃ or higher and 300 ℃ or lower, and still more preferably 80 ℃ or higher and 200 ℃ or lower. When the firing temperature is 400 ℃ or lower, a substrate having low heat resistance can be used, which is preferable. Further, when the firing temperature is 20 ℃ or higher, the formation of the firing film is sufficiently progressed, and the electrical conductivity tends to be good, which is preferable. The obtained sintered film may contain a conductive component derived from a metal component, and may contain a nonconductive component depending on the component used in the ink and the firing temperature.
[ bonding Process ]
In the bonding step, the semiconductor element 14 is electrically bonded to the bonding portion 121. The bonding method is not particularly limited, and can be performed using an anisotropic conductive adhesive, for example. The anisotropic conductive adhesive mainly comprises a resin adhesive and conductive fine particles dispersed in the resin adhesive, and the resin adhesive is spread out by applying pressure while heating between electrodes, whereby the electrodes are electrically bonded by the conductive fine particles. According to the bonding process, a film type, a paste type, a liquid type, or the like is known as the anisotropic conductive adhesive.
[ adhesive layer Forming Process ]
In the adhesive layer forming step, an adhesive layer 16 is formed so as to cover at least a part of both the antenna portion 13 and the semiconductor element 14. The method for forming the adhesive layer 16 is not particularly limited, and, for example, in the case of using a liquid material as a raw material for forming the adhesive layer 16, there is a method of applying the liquid material so as to cover at least a part of both the antenna portion 13 and the semiconductor element 14 and curing the liquid material. In addition, when a solid material such as a film is used as a raw material for forming the adhesive layer 16, the following method is exemplified: the solid material is disposed so as to cover at least a part of both the antenna portion 13 and the semiconductor element 14, and is bonded to at least a part of both the antenna portion 13 and the semiconductor element 14 by pressurization or heating.
[ antenna ]
An antenna 10 with information extraction prevention function for use in an RF tag 100 according to embodiment 1 includes a base material 11, an antenna portion 13 disposed on the base material 11, and an adhesive layer 16 formed so as to cover at least a part of the antenna portion 13, the antenna portion 13 having a line width W 2 When the adhesive layer 16 is peeled from the antenna portion 13, the adhesive layer 16 carries away the 1 st separation portion including at least a part of the conductive thin wire, and the 2 nd separation portion including the other part of the conductive thin wire other than the part of the conductive thin wire remains in the base material 11. Each structure can be the same as the above-described structure.
[ transparent antenna ]
The transparent antenna according to embodiment 2 includes: a transparent substrate having a 1 st major surface and a 2 nd major surface; an antenna section which is formed of a 1 st pattern, is disposed on the 1 st main surface of the transparent substrate, and has conductive thin lines having a line width of 0.25 [ mu ] m or more and 5.0 [ mu ] m or less; and a transmittance adjustment unit that is formed of a 2 nd pattern, is disposed on at least one of the 1 st main surface and the 1 st main surface of the transparent substrate, and is formed at least on the periphery of the antenna unit in a plan view.
In embodiment 2, the transmittance adjustment unit has a visible light transmittance Tr at a position adjacent to the antenna unit in plan view 21 Visible light transmittance Tr with the antenna portion 1 Absolute value of difference |Tr 21 －Tr 1 The I is below 10%.
With the above configuration, the transparent antenna according to embodiment 2 can reduce the visibility of the antenna unit. The visible light transmittance Tr is obtained by forming a 2 nd pattern around at least the antenna part formed by the 1 st pattern in a plan view 21 And the visible light transmittance Tr 1 Absolute value of difference |Tr 21 －Tr 1 When the ratio is 10% or less, the difference between the visible light transmittance of the antenna portion and the surrounding visible light transmittance can be reduced, and the visibility of the antenna portion can be reduced.
Fig. 8 is a schematic configuration diagram of the transparent antenna 1 according to embodiment 2. The transparent antenna 1 includes: a transparent substrate 11 having a 1 st main surface and a 2 nd main surface; an antenna portion 13 disposed on the 1 st main surface of the transparent substrate 11; a current collecting portion 12 electrically connected to the antenna portion 13; a joint 121 disposed on the 1 st main surface of the transparent base material 11; and a transmittance adjustment unit 17 formed at least around the antenna unit 13 in a plan view. The current collector 12 is electrically connected to the antenna 13, and refers to a portion that collects electricity generated by the antenna 13 in response to a predetermined frequency toward the semiconductor element 14. The bonding portion 121 is a portion of the current collector 12 bonded to the semiconductor element 14. Hereinafter, it is not necessary to distinguish between the collector 12 and the junction 121, and the portion related to the collector 12 (junction 121) may be referred to as "collector 12". Even when only "collector 12" is described, the portion of collector 12 other than joint 121 is not referred to.
[ collector part ]
As shown in fig. 8, the current collector 12 may have a loop shape so as to facilitate connection to the antenna 13.
[ Joint ]
The semiconductor element is connected to the bonding portion 121. The semiconductor elements are connected, for example, by an anisotropic conductive adhesive. The anisotropic conductive adhesive constitutes a conductive adhesive layer. The anisotropic conductive adhesive will be described in detail later.
Fig. 9 is a schematic configuration diagram showing another embodiment of the antenna unit 13 and the collector unit 12. As shown in fig. 9, an antenna portion 13 divided into two or more regions may be provided, and a collector portion 12 may be provided in a central portion of the antenna portion 13.
[ antenna part ]
Fig. 10 is an enlarged view of the S1 part of fig. 8 showing the 1 st pattern 131 constituting the antenna portion 13. The antenna portion 13 has a 1 st pattern 131 and an opening 132. The 1 st pattern 131 has conductive thin lines having a line width of 0.25 μm or more and 5.0 μm or less. The conductive thin line having the line width makes the conductive thin line in the 1 st pattern 131 invisible. The outer edge shape of the 1 st pattern 131 is designed so that the antenna portion 13 responds to a predetermined frequency. The conductive thin lines constituting the 1 st pattern 131 are electrically conductive with each other in the region of the antenna portion 13. The 1 st pattern 131 is a grid made of conductive thin lines, for example. The unit shape of the mesh is not particularly limited, and examples thereof include triangles, quadrilaterals, hexagons, and the like. Fig. 10 shows a grid having a square unit shape. Fig. 11 is a schematic diagram showing another embodiment of the 1 st pattern 131. In this other form, the mesh has a hexagonal unit shape.
The conductive thin wire is preferably a metal thin wire. The metal is not particularly limited, and examples thereof include gold, silver, copper, and aluminum. Among them, silver or copper is preferable, and copper is more preferable.
(line width W of pattern 1) 1 )
Line width W of conductive thin lines constituting pattern 1 1 Preferably from 0.25 μm to 5.0 μm, more preferably from 0.5 μm to 4.0 μm, and even more preferably from 1.0 μm to 3.0 μm. By making the line width W of the conductive thin line 1 By setting the range to this, the conductive thin lines constituting the 1 st pattern 131 become invisible, and the visibility of the antenna portion can be reduced. Line width W of embodiment 2 1 Refers to from penetratingLine width of the conductive thin line when the surface side of the transparent substrate 11 on which the 1 st pattern 131 is arranged projects the conductive thin line onto the surface of the transparent substrate 11.
(thickness T) 1 )
Thickness T of conductive thread 1 Preferably 10nm to 1000nm, more preferably 50nm to 50nm, and still more preferably 75 nm. By making the thickness T of the conductive thin wire 1 When the particle size is 10nm or more, the conductivity tends to be further improved. On the other hand, by making the thickness T of the conductive thin wire 1 Is 1000nm or less, thereby suppressing visibility at a wide viewing angle. Thickness T of conductive thread of embodiment 2 1 The maximum value in the direction perpendicular to the interface between the transparent base material 11 and the conductive thin line within the line width of the conductive thin line defined above includes a non-conductor portion that does not contribute to conduction, such as a void in the conductive portion and an adhesive layer.
(aspect ratio)
From the line width W relative to the conductive thin line 1 Thickness T of conductive thread 1 Expressed aspect ratio (T 1 /W 1 ) Preferably from 0.05 to 2.00. The lower limit of the aspect ratio is more preferably 0.08 or more, and still more preferably 0.10 or more. By setting the thickness-to-width ratio to 0.05 or more, conductivity tends to be further improved without decreasing transmittance. If the thickness-to-width ratio (T) 1 /W 1 ) When the ratio is 2.00 or less, the durability and adhesion of the conductive thin wire tend to be improved, which is preferable. The detailed mechanism of improving the durability and adhesion of the conductive thin wire is not known, and it is considered that the improvement of the thickness-to-width ratio (T 1 /W 1 ) Since the passivation film for improving durability is less than 2.00, defects are less likely to occur, and the shearing force in the in-plane direction of the conductive thin line is physically strong.
(pitch P) 1 )
Pitch P of 1 st pattern 131 1 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the 1 st pattern 131 1 A transmittance of 5 μm or more can be obtained. In addition, pattern 1Pitch P of 1 1 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the 1 st pattern 131 1 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. In addition, in the case where the 1 st pattern 131 is a square grid pattern, the pitch P of the 1 st pattern 131 with a line width of 1 μm is set 1 The opening ratio was set to 200. Mu.m, and was set to 99%. In addition, pitch P 1 Guiding the distance and line width W between the electric thin lines 1 A kind of electronic device.
(aperture ratio)
The aperture ratio of the 1 st pattern 131 is preferably 60% or more, more preferably 70% or more, further preferably 80% or more, and still further preferably 90% or more. By setting the aperture ratio of the 1 st pattern 131 to be equal to or larger than this value, the visible light transmittance of the transparent antenna tends to be further improved. The aperture ratio of the 1 st pattern 131 is preferably less than 100%, and more preferably 95% or less. By setting the aperture ratio of the 1 st pattern 131 to this value or less, the conductivity of the antenna portion tends to be further improved.
The "aperture ratio" in the pattern can be calculated by the following equation for the region on the transparent substrate where the 1 st pattern 131 is formed.
Aperture ratio (%) = (1-area occupied by 1 st pattern/area of transparent substrate where 1 st pattern is formed) ×100
(visible light transmittance Tr of antenna portion) 1 )
Visible light transmittance Tr of the antenna section 13 1 Preferably 80% or more and 99.0% or less, more preferably 85% or more and 95.0% or less. Visible light transmittance can be obtained by the method according to JIS K7361-1: 1997 to calculate the transmittance in the visible light (360-830 nm) range. By making visible light transmittance Tr 1 At least 80%, the visibility of the antenna portion can be further suppressed, and the visible light transmittance Tr is set to 1 At least 85%, the transmittance difference between the antenna portion and the transparent substrate becomes small, and the antenna portion is not easily visually recognized. In addition, by making visible light transmittance Tr 1 99% or moreIn the following, the conductivity of the pattern based on the antenna portion can be maintained, and if the visible light transmittance Tr is made 1 When the content is 95% or less, good conductivity is easily ensured, and the method is preferable in industrial production.
Visible light transmittance Tr of the antenna section 13 1 There is a tendency to be further improved by reducing the line width of the 1 st pattern 131 or increasing the aperture ratio.
(area resistivity of antenna portion)
The area resistivity of the antenna portion 13 is preferably 0.1 Ω/sq or more and 1000 Ω/sq or less, more preferably 0.1 Ω/sq or more and 500 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 300 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 200 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 100 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 20 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 10 Ω/sq or less. The lower the area resistivity is, the more the power loss tends to be suppressed, and the sensitivity as an antenna can be improved.
In the method for measuring the surface resistivity, first, a portion where the 1 st pattern 131 is disposed on the entire surface is cut out in a rectangular shape from the antenna portion of the transparent antenna, and a measurement sample is obtained. Can pass through the ink according to JIS K7194: 1994 four terminal method of measuring surface resistivity R from the obtained measurement sample s (Ω/sq). Examples of the resistivity meter used for measuring the surface resistivity include "Loresta-GP" (product name, mitsubishi chemical Co., ltd.).
The surface resistivity tends to decrease with an increase in the thickness-to-width ratio (thickness) of the conductive thin line. The surface resistivity can also be adjusted by selecting the type of metal material constituting the conductive thin line.
(haze of antenna portion)
The haze of the antenna portion 13 is preferably 0.01% or more and 5.00% or less. The upper limit of the haze is more preferably 4.00% or less, and still more preferably 3.00% or less. When the upper limit of the haze is 5.00% or less, the blurring of the conductive film with respect to visible light can be sufficiently reduced. The haze in the present specification can be determined according to JIS K7136: 2000 measurements were made.
[ transmittance adjustment section ]
As shown in fig. 8, the transparent antenna 1 of embodiment 2 includes a transmittance adjustment section 17 formed at least around the antenna section 13 in a plan view. The transmittance adjustment unit 17 may be disposed on the 1 st main surface of the transparent substrate 11, may be disposed on the 2 nd main surface of the transparent substrate 11, and may be disposed on both the 1 st main surface and the 2 nd main surface of the transparent substrate 11, and the transmittance adjustment unit 17 is preferably disposed on the 1 st main surface of the transparent substrate 11 from the viewpoint of ease of patterning. Hereinafter, a case where the transmittance adjustment section 17 is disposed on the 1 st main surface will be described as an example.
Fig. 12 is an enlarged view of the S2 portion of fig. 8 showing the 2 nd pattern 151 constituting the transmittance adjustment unit 17. The transmittance adjustment section 17 has a 2 nd pattern 151 and an opening 152. For example, the 2 nd pattern 151 includes a grid or dots made of thin lines. The unit shape of the mesh is not particularly limited, and examples thereof include triangles, quadrilaterals, hexagons, and the like.
The 2 nd pattern 151 may be formed of conductive thin lines or nonconductive thin lines. Among them, from the viewpoints of ease of tone adjustment and ease of pattern formation, the 2 nd pattern 151 is preferably made of conductive thin lines, and is preferably made of the same material as the 1 st pattern 131 constituting the antenna portion 13. If the 2 nd pattern 151 is made of conductive thin lines, it is preferable in that the generation of radio waves in the film in-plane direction can be suppressed, and in that the antenna anisotropy in the out-of-plane direction of the film can be exhibited. This is presumably because, when the 2 nd pattern 151 is formed of conductive thin lines, there is a radio wave absorber in the in-plane direction. The transmittance adjustment unit 17 is not electrically connected to the conductive thin lines in the 1 st pattern 131. The conductive thin lines constituting the 2 nd pattern 151 may or may not be electrically conductive to each other in the region of the transmittance adjustment section 17.
Examples of the nonconductive fine line include ink. By matching the hue of the ink with the hue of the conductive thin lines of the 1 st pattern 131, visibility can be further suppressed.
(pattern 2)Line width W of (2) 2 )
Line width W of fine lines constituting pattern 2 151 2 Preferably from 0.25 μm to 5.0 μm, more preferably from 0.5 μm to 3.0 μm, and even more preferably from 1.0 μm to 3.0 μm. By making the line width W of the conductive thin line 2 With this range, the conductive thin lines constituting the 2 nd pattern 151 can be made invisible. Line width W of embodiment 2 2 Refers to the line width of the thin line when the thin line is projected onto the surface of the transparent substrate 11 from the surface side of the transparent substrate 11 where the 2 nd pattern 151 is arranged.
(thickness T) 2 )
Thickness T of thin line constituting pattern 2 151 2 Preferably 10nm to 1000nm, more preferably 50nm to 50nm, and still more preferably 75 nm. By making the thickness T of the thin lines constituting the 2 nd pattern 151 2 When the particle size is 10nm or more, the conductivity tends to be further improved. On the other hand, by making the thickness T of the thin wire 2 Is 1000nm or less, thereby suppressing visibility at a wide viewing angle. Thickness T of thin lines constituting the 2 nd pattern 151 of embodiment 2 2 The maximum value in the direction perpendicular to the interface between the transparent substrate 11 and the conductive thin line within the line width of the thin line constituting the 2 nd pattern 151 defined above is included in the non-conductor portion which does not contribute to conduction, such as a void in the thin line and an adhesive layer.
(aspect ratio)
From the line width W relative to the thin lines constituting the 2 nd pattern 151 2 Thickness T of the fine wire of (2) 2 Expressed aspect ratio (T 2 /W 2 ) Preferably from 0.05 to 2.00. The lower limit of the aspect ratio is more preferably 0.08 or more, and still more preferably 0.10 or more. By setting the thickness-to-width ratio to 0.05 or more, conductivity tends to be further improved without decreasing transmittance. If the thickness-to-width ratio (T) 2 /W 2 ) When the number is 2.00 or less, durability and adhesiveness of the fine wire tend to be improved, and this is preferable. The detailed mechanism of improving the durability and adhesion of the thin wire is not known, and it is considered that the improvement of the thickness-to-width ratio (T 2 /W 2 ) Is 2.00 or less for improving durabilityThe passive film is less likely to cause defects, and the shear force in the in-plane direction of the conductive thin line is physically strong.
(pitch P) 2 )
Pitch P of pattern 2 151 2 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the 2 nd pattern 151 2 A transmittance of 5 μm or more can be obtained. In addition, the pitch P of the 2 nd pattern 151 2 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the 2 nd pattern 151 2 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. Further, pitch P 2 Guiding the distance and line width W between the electric thin lines 2 A kind of electronic device.
(aperture ratio)
The aperture ratio of the 2 nd pattern 151 is preferably 60% or more, more preferably 70% or more, further preferably 80% or more, and still further preferably 90% or more. By setting the aperture ratio of the 2 nd pattern 151 to be equal to or larger than this value, the visible light transmittance of the transparent antenna tends to be further improved. The aperture ratio of the 2 nd pattern 151 is preferably less than 100%, and more preferably 95% or less. The method of calculating the aperture ratio is the same as that of the 1 st pattern 131 described above.
[ absolute value of difference |Tr 21 －Tr 1 |〕
A position P of the transmittance adjustment unit 17 adjacent to the antenna unit 13 in plan view a Visible light transmittance Tr of (2) 21 Visible light transmittance Tr with the antenna section 13 1 Absolute value of difference |Tr 21 －Tr 1 The I is below 10%. By providing the transmittance adjustment unit 17, the visibility of the antenna unit 13 can be suppressed. Absolute value of the difference |Tr 21 －Tr 1 The content of i is preferably 8% or less, more preferably 5% or less, and even more preferably 3% or less. By making the absolute value of the difference |Tr 21 －Tr 1 The range is defined as i, and visibility of the antenna unit can be suppressed. Absolute value of difference |Tr 21 －Tr 1 The "I" is not particularly limited, and may be, for example, 0.1 or more.
For visible light transmittance Tr 21 Position P at which measurement is performed a The position of the transmittance adjustment unit 17 adjacent to the antenna unit 13 in a plan view is, for example, a position shown in fig. 8.
(visible light transmittance Tr) 21 )
Visible light transmittance Tr 21 Preferably 80% or more and 99.9% or less, more preferably 85% or more and 95.0% or less. By making visible light transmittance Tr 21 At least 80%, the visibility of the transmittance adjustment unit 17 can be further suppressed, and the transmittance of visible light Tr is reduced 21 When the transmittance is 85% or more, the transmittance difference between the transmittance adjusting section 17 and the transparent substrate becomes small, and the transmittance adjusting section 17 is not easily visually recognized. When visible light transmittance Tr 21 When the content is 95% or less, the processing range of a usual film is preferable in terms of production.
Visible light transmittance Tr of the 2 nd pattern 151 21 There is a tendency to be further improved by reducing the line width of the 2 nd pattern 151 or increasing the aperture ratio.
(visible light transmittance Tr) 22 )
Visible light transmittance Tr of the peripheral portion of the transparent substrate 11 22 Preferably has a visible light transmittance Tr greater than that of the antenna section 13 1 Is a value of (2). With this structure, when the transparent antenna is attached to a transparent article, the transparent antenna can be easily incorporated into a surrounding transparent member, and visibility during use can be suppressed. In addition, in the transparent antenna according to embodiment 2, there are cases where the 2 nd pattern 151 is not formed on the transparent substrate 11 and where the 2 nd pattern 151 constituting the transmittance adjustment unit 17 is formed on the transparent substrate 11 in the peripheral edge portion of the transparent substrate 11.
Visible light transmittance Tr 22 Preferably, the transmittance adjustment section 17 is provided at a position P adjacent to the antenna section 13 in plan view a Visible light transmittance Tr of (2) 21 Large values. Specifically, visible light transmittance Tr 22 Preferably from 85% to 99.9%, more preferably from 90% to 99.9%, and even more preferably from 95% to 99.9%. In this case, the firstVisible light transmittance Tr in the 2 pattern 151 21 From a position P adjacent to the antenna portion 13 in a plan view a To the peripheral edge part P of the transparent substrate b Increasing stepwise. Thus, by making the visible light transmittance Tr 21 The number of steps increases, and the surroundings of the antenna unit 13 can be made indistinct, thereby suppressing visibility. Alternatively, even in making the visible light transmittance Tr in the 2 nd pattern 151 21 From position P a To the peripheral edge part P b Even when the number of the antenna units 13 is continuously increased, the surroundings of the antenna units can be made unclear, and visibility can be suppressed.
On the other hand, the visible light transmittance Tr of the peripheral portion of the transparent substrate 11 22 May also have a visible light transmittance Tr smaller than that of the antenna portion 13 1 Is a value of (2). With this structure, when the transparent antenna is attached to an opaque article, the transparent antenna can be easily incorporated into a surrounding transparent member, and visibility during use can be suppressed.
In visible light transmittance Tr 22 Less than visible light transmittance Tr 1 In the case of (a), visible light transmittance Tr 22 Preferably, the transmittance adjustment section 17 is provided at a position P adjacent to the antenna section 13 in plan view a Visible light transmittance Tr of (2) 21 Small values. Visible light transmittance Tr 22 Preferably 70% or more and 99.0% or less, more preferably 75% or more and 95.0% or less, and still more preferably 80% or more and 90.0% or less. In this case, the visible light transmittance Tr in the 2 nd pattern 151 21 From a position P adjacent to the antenna portion 13 in a plan view a To the peripheral edge part P of the transparent substrate b And decreases stepwise. Thus, by making the visible light transmittance Tr 21 The number of steps is reduced, and the surroundings of the antenna unit 13 can be made indistinct, thereby suppressing visibility. Alternatively, even in making the visible light transmittance Tr in the 2 nd pattern 151 21 From position P a To the peripheral edge part P b Even when the number of the antenna units 13 is continuously reduced, the surroundings of the antenna units can be made unclear, and visibility can be suppressed.
In addition, from the above position P a Toward the peripheral edge P b The stepwise or continuous increase or decrease in transmissivity need not be a monotonically varying increase or decrease,for example, the slave position P may be a After the transmittance is reduced, the transmittance is increased to the peripheral edge part P b . For the slave position P a Toward the peripheral edge P b The transmittance change can be appropriately set according to the external appearance with the member to which the transparent antenna is attached.
(surface resistivity of the transmittance adjustment portion)
When the transmittance adjustment unit 17 is made of conductive thin wires, the surface resistivity of the transmittance adjustment unit 17 is preferably 0.1 Ω/sq or more and 1000 Ω/sq or less, more preferably 0.1 Ω/sq or more and 500 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 300 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 200 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 100 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 20 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 10 Ω/sq or less. The lower the area resistivity is, the more the power loss tends to be suppressed, and the sensitivity as an antenna can be improved.
The surface resistivity tends to decrease with an increase in the thickness-to-width ratio (thickness) of the conductive thin line. The surface resistivity can also be adjusted by selecting the type of metal material constituting the conductive thin line.
(haze of transmittance adjustment portion)
The haze of the transmittance adjustment section 17 is preferably 0.01% or more and 5.00% or less. The upper limit of the haze is more preferably 4.00% or less, and still more preferably 3.00% or less. When the upper limit of the haze is 5.00% or less, the blurring of the conductive film with respect to visible light can be sufficiently reduced. The haze in the present specification can be determined according to JIS K7136: haze of 2000 was measured.
The antenna portion 13 and the transmittance adjustment portion 17 are arranged so as to reduce abrupt changes in the visual transmittance of the boundary of the peripheral portion of the antenna portion 13 and suppress visibility of the shape of the antenna portion 13 in plan view.
Fig. 13 is an enlarged view of the portion S3 in fig. 8 showing the boundary between the antenna portion 13 and the transmittance adjustment portion 17. The antenna portion 13 and the transmittance adjustment portion 17 in the transparent antenna 1 according to embodiment 2 may be disposed so as to be interposed therebetweenThe non-conductive region 171 is configured. Width W of non-conductive region 171 3 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the width W of the non-conductive region 171 3 The transmittance is 5 μm or more, and good transmittance can be maintained. In addition, the width W of the non-conductive region 171 3 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the width W of the non-conductive region 171 3 In this range, the visibility of the non-conductive region 171 can be suppressed, and a transparent antenna in which the visibility of the antenna portion 13 is suppressed can be obtained.
As another embodiment, the transmittance adjustment unit 17 may be arranged so as to overlap with a part of the antenna unit 13 in a plan view. More specifically, the transmittance adjustment unit 17 may be disposed on the 2 nd main surface so that a part thereof overlaps the antenna unit 13 formed on the 1 st main surface in a plan view.
[ transparent substrate ]
"transparent" of a transparent substrate means: the visible light transmittance is preferably 80% or more, more preferably 90% or more, and still more preferably 95% or more. Here, the visible light transmittance can be set in accordance with JIS K7361-1: 1997.
The material of the transparent substrate is not particularly limited, and examples thereof include transparent inorganic substrates such as glass; transparent organic substrates such as acrylates, methacrylates, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonates, polyarylates, polyvinylchloride, polyethylene, polypropylene, polystyrene, nylon, aromatic polyamides, polyetheretherketone, polysulfone, polyethersulfone, polyimide, and polyetherimide. Among them, polyethylene terephthalate, polyimide or polyethylene naphthalate is preferable. By using polyethylene terephthalate, productivity (cost reduction effect) for producing a conductive film is more excellent, and adhesion between a transparent substrate and a conductive thin line tends to be further improved. Further, the use of polyimide tends to further improve the heat resistance of the conductive thin film. Further, the use of polyethylene naphthalate tends to provide more excellent adhesion between the transparent substrate and the conductive thin line.
The transparent base material may be composed of 1 kind of material, or may be composed of two or more kinds of materials stacked. In the case where the transparent substrate is a multilayer body formed by laminating two or more materials, the transparent substrate may be a substrate formed by laminating organic substrates or a substrate formed by laminating inorganic substrates, or may be a substrate formed by laminating organic substrates and inorganic substrates.
The thickness of the transparent substrate is preferably 5 μm or more and 500 μm or less, more preferably 10 μm or more and 100 μm or less.
[ intermediate layer ]
The transparent antenna 1 of embodiment 2 may have an intermediate layer between the transparent base material and the conductive portion. The intermediate layer can contribute to improving adhesion between the transparent substrate and the conductive thin line of the conductive portion.
The component contained in the intermediate layer is not particularly limited, and examples thereof include silicon compounds (for example, (poly) silanes, (poly) silazanes, (poly) silathiolanes, (poly) siloxanes, silicon carbide, silicon oxide, silicon nitride, silicon chloride, silicate, zeolite, silicide, and the like), aluminum compounds (for example, aluminum oxide and the like), magnesium compounds (for example, magnesium fluoride), and the like. Among them, at least 1 selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, and magnesium fluoride is preferable. By using such a component, the transparency and durability of the conductive film tend to be further improved, and the productivity (cost reduction effect) for producing the conductive film is more excellent. The intermediate layer can be formed by a vapor phase film forming method such as PVD or CVD, or a method of applying an intermediate forming composition in which the components contained in the intermediate layer are dispersed in a dispersion medium, and drying the composition. The intermediate-forming composition may contain a dispersant, a surfactant, a binder, and the like as necessary.
The thickness of the intermediate layer is preferably 0.01 μm or more and 500 μm or less, more preferably 0.05 μm or more and 300 μm or less, and still more preferably 0.10 μm or more and 200 μm or less. When the thickness of the intermediate layer is set to 0.01 μm or more, adhesion between the intermediate layer and the conductive thin line is exhibited, and when the thickness of the intermediate layer is set to 500 μm or less, flexibility of the transparent substrate can be ensured.
By laminating the intermediate layer on the transparent substrate, etching of the portions of the transparent substrate not covered with the conductive thin line pattern portions by plasma or the like can be prevented when the metal component in the ink is sintered by a firing means such as plasma.
In order to prevent disconnection of the conductive thin line pattern due to static electricity, the intermediate layer preferably has an antistatic function. In order to impart an antistatic function to the intermediate layer, the intermediate layer preferably contains at least any one of a conductive inorganic oxide and a conductive organic compound. Examples of the conductive organic compound include conductive organosilane compounds, aliphatic conjugated polyacetylenes, aromatic conjugated poly (p-phenylene), heterocyclic conjugated polypyrroles, and the like. Among them, an electrically conductive organosilane compound is preferable.
The volume resistivity of the intermediate layer is preferably 100 Ω cm to 100000 Ω cm, more preferably 1000 Ω cm to 10000 Ω cm, still more preferably 2000 Ω cm to 8000 Ω cm. The volume resistivity of the intermediate layer is 100000 Ω cm or less, whereby an antistatic function can be exhibited. Further, the volume resistivity of the intermediate layer is set to 100 Ω cm or more, so that the intermediate layer can be preferably used for a touch panel or the like in which electrical conduction between conductive thin line patterns is not desired. The volume resistivity can be adjusted by the content of the component exhibiting an antistatic function, such as the conductive inorganic oxide and the conductive organic compound, in the intermediate layer. For example, the intermediate layer contains silicon oxide having high plasma resistance (volume resistivity of 10 14 Ω·cm or more) and an organosilane compound as a conductive organic compound, the volume resistivity can be reduced by increasing the content of the conductive organosilane compound. On the other hand, by increasing the content of silicon oxide, the volume resistivity increases, but since the silicon oxide has high plasma resistance, a thin film can be formed without impairing the optical characteristics.
[ method for manufacturing transparent antenna ]
The transparent antenna can be obtained, for example, by forming the pattern of the transparent antenna on a transparent substrate. The method for manufacturing the transparent antenna is not particularly limited, and examples thereof include the following methods: a pattern forming step of forming a pattern on a transparent substrate using an ink containing a metal component; and a firing step of firing the pattern to form conductive thin lines. The method for manufacturing a transparent antenna according to embodiment 2 may further include an intermediate layer forming step of forming an intermediate layer on the surface of the transparent substrate before the pattern forming step.
[ intermediate layer Forming Process ]
The intermediate layer forming step is a step of forming an intermediate layer on the surface of the transparent substrate. The method for forming the intermediate layer is not particularly limited, and examples thereof include: a method of forming a vapor deposition film on the surface of a transparent substrate by a vapor deposition method such as Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD); a method of forming a coating film by applying an intermediate layer forming composition to the surface of a transparent substrate and drying the composition.
The intermediate layer-forming composition includes components exemplified as the components included in the intermediate layer or a precursor thereof and a solvent, and may contain a surfactant, a dispersant, a binder, and the like, as necessary.
[ Pattern Forming Process ]
The patterning step is a step of patterning using an ink containing a metal component. The patterning step is not particularly limited as long as it is a plate printing method using a plate having grooves with a desired conductive pattern, and includes, for example: the method includes a step of applying ink to a transfer medium surface, a step of bringing the transfer medium surface coated with ink into contact with a convex portion surface of a relief plate by pressing the surface against the convex portion surface of the relief plate, and a step of transferring ink remaining on the transfer medium surface to a surface of a transparent substrate by bringing the transfer medium surface coated with ink into contact with the surface of the transparent substrate by pressing the surface against the surface of the transparent substrate. In addition, in the case where the transparent substrate is formed with an intermediate layer, ink is transferred to the surface of the intermediate layer.
(ink)
As the ink, the ink exemplified in embodiment 1 can be used appropriately.
[ firing step ]
The firing step is a step of firing the pattern to form conductive thin lines, whereby a conductive portion having the same conductive thin line pattern as the pattern coated with ink can be obtained. The firing is not particularly limited as long as the metal component can be fused to form a metal component sintered film. Firing may be performed in a firing furnace, for example, or may be performed using plasma, a heated catalyst, ultraviolet rays, vacuum ultraviolet rays, electron beams, infrared lamp annealing, flash lamp annealing, laser light, or the like. In the case where the obtained sintered film is easily oxidized, the firing is preferably performed in a non-oxidizing atmosphere. In the case where it is difficult to reduce a metal oxide or the like by only a reducing agent that can be contained in the ink, firing is preferably performed in a reducing atmosphere.
The non-oxidizing atmosphere is an atmosphere containing no oxidizing gas such as oxygen, and includes an inert atmosphere and a reducing atmosphere. The inert atmosphere is an inert gas atmosphere filled with, for example, argon, helium, neon, nitrogen, or the like. The reducing atmosphere is an atmosphere in which a reducing gas such as hydrogen or carbon monoxide is present. These gases may be filled in a firing furnace, and an ink coating film (dispersion coating film) may be fired as a closed system. The firing furnace may be a flow system, and the coating film may be fired while the gases are flowed. When the coating film is fired in a non-oxidizing atmosphere, it is preferable to temporarily evacuate the firing furnace to remove oxygen from the firing furnace and replace the oxygen with a non-oxidizing gas. The firing may be performed under a pressurized atmosphere or under a reduced pressure atmosphere.
The firing temperature is not particularly limited, but is preferably 20 ℃ or higher and 400 ℃ or lower, more preferably 50 ℃ or higher and 300 ℃ or lower, and still more preferably 80 ℃ or higher and 200 ℃ or lower. When the firing temperature is 400 ℃ or lower, a substrate having low heat resistance can be used, which is preferable. Further, when the firing temperature is 20 ℃ or higher, the formation of the firing film is sufficiently progressed, and the electrical conductivity tends to be good, which is preferable. The obtained sintered film may contain a conductive component derived from a metal component, and may contain a nonconductive component depending on the component used in the ink and the firing temperature.
Among them, from the viewpoint of adjusting the diffusion and aggregation of the metal component and thereby adjusting the void amount in the conductive thin wire, for example, heat, plasma, electron beam, and light source are preferably used as the energy at the time of firing, and flash lamp annealing is preferably used. From the same viewpoint, the firing time is preferably 100 musec to 50msec, more preferably 800 musec to 10msec, and still more preferably 1msec to 2.4msec. In addition, firing may be performed using multiple flash anneals, as needed.
In addition to the above, in order to facilitate welding of metal components and obtain a conductive thin film having higher conductivity, a firing method using plasma is more preferably used. From the same viewpoint, the output power of the plasma is preferably 0.5kW or more, more preferably 0.6kW or more, and still more preferably 0.7kW or more. The upper limit of the output power of the plasma is not particularly limited as long as it is a range that does not damage the transparent substrate or the intermediate layer used. The lower limit of the firing time depends on the plasma output, but the upper limit of the firing time is preferably 1000sec or less, more preferably 600sec or less from the viewpoint of productivity. In addition, the firing may be performed using a plurality of plasma firing steps as needed.
[ RF tag ]
Fig. 14 is a schematic configuration diagram of RF tag 100 according to embodiment 2. Fig. 15 is a schematic side view of RF tag 100 according to embodiment 2. The "RF tag" is an abbreviation of "Radio Frequency tag". RF tags are also sometimes referred to as electronic tags, IC tags, wireless tags, RFID tags, and other names. The term "RF tag" in this embodiment means a tag that can be used together with a corresponding reader and can transmit or receive data between the reader in a noncontact manner. The noncontact transmission or reception is preferably performed by radio waves. The reader may also be used as a writer (writing). The RF tag 100 includes the transparent antenna 1 according to embodiment 2 and the semiconductor element 14 electrically connected to the antenna unit 13. The semiconductor element 14 is connected to the collector 12 of the transparent antenna 1 according to embodiment 2 by, for example, an anisotropic conductive paste or an anisotropic conductive film. The semiconductor element 14 is bonded to the collector 12 via a conductive adhesive layer 19. The semiconductor element 14 is not particularly limited, and examples thereof include integrated circuits such as memory elements.
In embodiment 2, the RF tag 100 is shown as a passive tag that does not have a battery and operates using radio waves received from a reader/writer as an energy source, but the RF tag 100 of embodiment 2 may be an active tag that further has a battery (not shown) incorporated therein and uses the power for transmission and reception and an internal circuit power supply; a semi-passive tag having a battery as a power source of the sensor and other sensors built therein. In embodiment 2, the RF tag is a tag capable of transmitting and receiving a specific frequency by having the transparent antenna 1. Therefore, even a tag called an IC tag is included in the RF tag of embodiment 2 as long as the above configuration is satisfied.
The semiconductor element 14 can be a known semiconductor element according to the use of the RF tag 100. The structure of the semiconductor element 14 is not particularly limited, and includes, for example, a storage unit, a power rectifying unit, a receiving unit, a control unit, a transmitting unit, and other functional units.
An example of the operation of each functional unit and the RF tag 100 according to embodiment 2 in the passive mode will be described. First, the antenna unit 13 of the RF tag 100 receives radio waves from a reader/writer, and generates electromotive force by electromagnetic induction or the like. Then, the semiconductor element 14 of the RF tag 100 is activated by the electromotive force. At this time, the power rectifying unit converts ac input to the antenna unit 13 into dc, and supplies power to the circuit of the semiconductor element 14. In parallel with this, the reception unit demodulates the carrier wave received from the reader/writer into a signal sequence, and transmits the signal sequence to the control unit. The control unit reads and writes information from and into the storage unit based on the signal sequence received from the reception unit, and transmits the information processing result to the transmission unit as the signal sequence. Here, the storage unit stores various information such as product information according to the use of the RF tag. Finally, the transmitting unit modulates the signal sequence received from the control unit into a carrier wave, and transmits the carrier wave from the antenna unit 13. Then, the antenna of the reader/writer receives the carrier wave and performs information processing. In embodiment 2, the RFID means a system including an RF tag and a reader/writer.
The frequency band that can be used by the RF tag 100 of embodiment 2 is not particularly limited, and examples thereof include an LF band (medium wave band): 120-130 kHz, HF band (short wave band): 13.56MHz, UHF band (ultrashort wave): 900MHz band, microwave: 2.45GHz band. The type of the antenna portion 13 can be appropriately adjusted according to the frequency band to be used. For example, a loop type antenna can be used when the HF band is used, and a dipole type antenna can be used when the UHF band is used.
The transmission/reception method that can be used for the RF tag 100 according to embodiment 2 is not limited to the radio wave method described above, and an electromagnetic coupling method in which a high frequency is applied to coils provided on the transmission side and the reception side, respectively, to cause mutual inductance to be generated, and an electromagnetic induction method in which a magnetic field generated near an antenna is caused to cause information to be carried and information to be exchanged may be used.
Transparent antenna
The transparent antenna according to embodiment 3 includes: a transparent substrate having a 1 st major surface and a 2 nd major surface; an antenna section which is formed of a 1 st pattern, is disposed on the 1 st main surface of the transparent substrate, and has conductive thin lines having a line width of 0.25 [ mu ] m or more and 5.0 [ mu ] m or less; and a color tone adjustment section which is disposed on at least one of the 1 st main surface and the 1 st main surface of the transparent substrate and is formed at least on the periphery of the antenna section in a plan view.
In embodiment 3, the color adjustment portion is formed so as to be identical to that of the case of plan viewChromaticity C of adjacent position of the antenna part 2 (L 2 ＊，a 2 ＊，b 2 And the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less.
With the above configuration, the transparent antenna according to embodiment 3 can reduce the visibility of the antenna unit. The color difference is caused by the color adjustment part formed at least at the periphery of the antenna part formed by the 1 st pattern in the top perspective view
The difference between the chromaticity of the antenna portion and the surrounding area can be reduced to 10 or less, and the visibility of the antenna portion can be reduced.
Fig. 16 is a schematic configuration diagram of the transparent antenna 1 according to embodiment 3. The transparent antenna 1 includes: a transparent substrate 11 having a 1 st main surface and a 2 nd main surface; a current collecting portion 12 disposed on the 1 st main surface of the transparent base material 11; an antenna portion 13 disposed on the 1 st main surface of the transparent substrate 11; and a color adjustment unit 18 formed at least around the antenna unit 13 in a plan view.
The current collector 12 is electrically connected to the antenna 13, and refers to a portion that collects electricity generated by the antenna 13 in response to a predetermined frequency toward the semiconductor element 14. The bonding portion 121 is a portion of the current collector 12 bonded to the semiconductor element 14. Hereinafter, it is not necessary to distinguish between the collector 12 and the junction 121, and the portion related to the collector 12 (junction 121) may be referred to as "collector 12". Even when only "collector 12" is described, the portion of collector 12 other than joint 121 is not referred to.
< junction >
The bonding portion 121 is located at the tip of the collector 12 and is a portion bonded to the semiconductor element 14. Fig. 17 shows an enlarged view of S1a of fig. 16. In fig. 17, the current collector 12 has two or more joining portions 121 with their distal ends facing each other. The semiconductor element 14 can be electrically bonded to the bonding portion 121 by an anisotropic conductive adhesive or the like. The antenna portion 13 is electrically connected to the joint portion 121, and is capable of receiving radio waves of a predetermined frequency, transmitting an electric signal to the semiconductor element 14, or transmitting radio waves of a predetermined frequency based on an output of the semiconductor element 14. Note that, in fig. 17, the collector 12 is shown in a trapezoidal shape, but the shape of the collector 12 is not limited thereto. As an example, the collector 12 in fig. 17 has an area equal to or several times the projected area of the semiconductor element in plan view, and preferably, the collector 12 is almost covered when the semiconductor element 14 is bonded to the bonding portion 121. In this case, the current collector 12 may be said to be substantially constituted only by the joint 121.
Fig. 16 shows the transparent antenna 10 and the RF tag 100 having two antenna portions 13 and the collector portion 12 having the joint portion 121 therebetween, but the form of the collector portion 12 (joint portion 121) and the antenna portion 13 is not limited to this. For example, as shown in fig. 18, the transparent antenna 10 and the RF tag 100 according to embodiment 3 may be a loop-shaped transparent antenna 10 and an RF tag 100 in which the collector 12 has a loop shape and the antenna 13 is provided around the loop-shaped collector 12.
Fig. 19 shows an enlarged view of S1b of fig. 18. As shown in fig. 19, the loop-type current collector 12 has a joint 121 in which the tips of the loops face each other. The bonding portion 121 is located at the tip of the collector 12 and is a portion bonded to the semiconductor element 14.
Fig. 17 and 19 show examples in which the current collecting portion 12 (the joint portion 121) formed by the conductive pattern formed by the thicker conductive thin line is electrically joined to the antenna portion 13 formed by the conductive pattern formed by the thinner conductive thin line. The conductive pattern constituting the collector 12 is shown as a grid pattern formed by intersecting a plurality of conductive thin lines in a network, but the conductive pattern is not limited to this, and may be other patterns in which conductive thin lines intersect to maintain conductivity. The conductive pattern constituting the collector 12 may be a regular pattern or an irregular pattern. The conductive thin line may be a straight line or a curved line.
Antenna part
Fig. 20 is an enlarged view of the S1 portion of fig. 16 showing the 1 st pattern 131 constituting the antenna portion 13. The antenna portion 13 has a 1 st pattern 131 and an opening 132. The 1 st pattern 131 has conductive thin lines having a line width of 0.25 μm or more and 5.0 μm or less. The conductive thin line having the line width makes the conductive thin line in the 1 st pattern 131 invisible. The outer edge shape of the 1 st pattern 131 is designed so that the antenna portion 13 responds to a predetermined frequency. The conductive thin lines constituting the 1 st pattern 131 are electrically conductive with each other in the region of the antenna portion 13. The 1 st pattern 131 is a grid made of conductive thin lines, for example. The unit shape of the mesh is not particularly limited, and examples thereof include triangles, quadrilaterals, hexagons, and the like. Fig. 20 shows a grid having a square unit shape. Fig. 21 is a schematic diagram showing another embodiment of the 1 st pattern 131. In this other form, the mesh has a hexagonal unit shape.
The conductive thin wire is preferably a metal thin wire. The metal is not particularly limited, and examples thereof include gold, silver, copper, and aluminum. Among them, silver or copper is preferable, and copper is more preferable.
(line width W of pattern 1) 1 )
Line width W of conductive thin lines constituting pattern 1 1 Preferably from 0.25 μm to 5.0 μm, more preferably from 0.5 μm to 4.0 μm, and even more preferably from 1.0 μm to 3.0 μm. By making the line width W of the conductive thin line 1 By setting the range to this, the conductive thin lines constituting the 1 st pattern 131 become invisible, and the visibility of the antenna portion 13 can be reduced. Line width W of embodiment 3 1 Refers to the line width of the conductive thin line when the conductive thin line is projected onto the surface of the transparent substrate 11 from the surface side of the transparent substrate 11 where the 1 st pattern 131 is arranged.
(thickness T) 1 )
Thickness T of conductive thread 1 Preferably from 10nm to 1000nmMore preferably 50nm or more, and still more preferably 75nm or more. By making the thickness T of the conductive thin wire 1 When the particle size is 10nm or more, the conductivity tends to be further improved. On the other hand, by making the thickness T of the conductive thin wire 1 Is 1000nm or less, thereby suppressing visibility at a wide viewing angle. Thickness T of conductive thread of embodiment 3 1 The maximum value in the vertical direction with respect to the interface between the transparent base material 11 and the conductive thin line within the line width of the conductive thin line defined above includes a non-conductor portion that does not contribute to conduction, such as a void in the conductive portion and an adhesive layer.
(aspect ratio)
From the line width W relative to the conductive thin line 1 Thickness T of conductive thread 1 Expressed aspect ratio (T 1 /W 1 ) Preferably from 0.05 to 2.00. The lower limit of the aspect ratio is more preferably 0.08 or more, and still more preferably 0.10 or more. By setting the thickness-to-width ratio to 0.05 or more, conductivity tends to be further improved without decreasing transmittance. If the thickness-to-width ratio (T) 1 /W 1 ) When the ratio is 2.00 or less, the durability and adhesion of the conductive thin wire tend to be improved, which is preferable. The detailed mechanism of improving the durability and adhesion of the conductive thin wire is not known, and it is considered that the improvement of the thickness-to-width ratio (T 1 /W 1 ) Since the passivation film for improving durability is less than 2.00, defects are less likely to occur, and the shearing force in the in-plane direction of the conductive thin line is physically strong.
(pitch P) 1 )
Pitch P of conductive pattern 131 1 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the conductive pattern 131 1 A transmittance of 5 μm or more can be obtained. In addition, the pitch P of the conductive pattern 131 1 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the conductive pattern 131 1 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. In addition, the conductive pattern 131 is a square gridIn the case of the pattern, the pitch P of the conductive pattern 131 having a line width of 1 μm is used 1 The opening ratio was set to 200. Mu.m, and was set to 99%. In addition, pitch P 1 Guiding the distance and line width W between the electric thin lines 1 A kind of electronic device.
(aperture ratio)
The aperture ratio of the 1 st pattern 131 is preferably 60% or more, more preferably 70% or more, further preferably 80% or more, and still further preferably 90% or more. By setting the aperture ratio of the 1 st pattern 131 to be equal to or larger than this value, the visible light transmittance of the transparent antenna tends to be further improved. The aperture ratio of the 1 st pattern 131 is preferably less than 100%, and more preferably 95% or less. By setting the aperture ratio of the 1 st pattern 131 to this value or less, the conductivity of the antenna portion 13 tends to be further improved.
The "aperture ratio" in the pattern can be calculated by the following equation for the region on the transparent substrate where the 1 st pattern 131 is formed.
Aperture ratio (%) = (1-area occupied by 1 st pattern/area of transparent substrate where 1 st pattern is formed) ×100
(visible light transmittance Tr of antenna portion) 1 )
Visible light transmittance Tr of the antenna section 13 1 Preferably 80% or more and 99.0% or less, more preferably 85% or more and 95.0% or less. Visible light transmittance can be obtained by the method according to JIS K7361-1: 1997 to calculate the transmittance in the visible light (360-830 nm) range. By making visible light transmittance Tr 1 When the visible light transmittance Tr is set to 80% or more, the visibility of the antenna section 13 can be further suppressed 1 At least 85%, the transmittance difference between the antenna portion 13 and the transparent substrate becomes small, and the antenna portion 13 is not easily visually recognized. In addition, by making visible light transmittance Tr 1 At most 99%, the conductivity of the pattern due to the antenna portion can be maintained, and the visible light transmittance Tr is set to 1 When the content is 95% or less, good conductivity is easily ensured, and the method is preferable in industrial production.
Visible light transmittance Tr of the antenna section 13 1 There is a tendency to be further improved by reducing the line width of the 1 st pattern 131 or increasing the aperture ratio.
(area resistivity of antenna portion)
The area resistivity of the antenna portion 13 is preferably 0.1 Ω/sq or more and 1000 Ω/sq or less, more preferably 0.1 Ω/sq or more and 500 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 300 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 200 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 100 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 20 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 10 Ω/sq or less. The lower the area resistivity is, the more the power loss tends to be suppressed, and the sensitivity as an antenna can be improved.
In the method for measuring the surface resistivity, first, a portion having the 1 st pattern disposed on the entire surface is cut out in a rectangular shape from an antenna portion of a transparent antenna, and a measurement sample is obtained. Can pass through the ink according to JIS K7194: 1994 four terminal method of measuring surface resistivity R from the obtained measurement sample s (Ω/sq). Examples of the resistivity meter used for measuring the surface resistivity include "Loresta-GP" (product name, mitsubishi chemical Co., ltd.).
The surface resistivity tends to decrease with an increase in the thickness-to-width ratio (thickness) of the conductive thin line. The surface resistivity can also be adjusted by selecting the type of metal material constituting the conductive thin line.
(haze of antenna portion)
The haze of the antenna portion 13 is preferably 0.01% or more and 5.00% or less. The upper limit of the haze is more preferably 4.00% or less, and still more preferably 3.00% or less. When the upper limit of the haze is 5.00% or less, the blurring of the conductive film with respect to visible light can be sufficiently reduced. The haze in the present specification can be determined according to JIS K7136: haze of 2000 was measured.
< tone adjustment portion >)
As shown in fig. 16, the transparent antenna 1 according to embodiment 3 has a tone adjustment portion 18 formed at least on the periphery of the antenna portion 13 in a plan view. The color tone adjusting portion 18 may have a function of adjusting the color difference with the antenna portion 13, and may be, for example, a pattern (hereinafter, may be referred to as "pattern 2" as distinguished from pattern 1 of the antenna portion), or may be a full-color plate formed of a highly transparent paint.
Further, if the color difference condition described later is satisfied, the form of the color adjustment unit 18 is not limited, and for example, the color adjustment unit 18 does not have to have uniform chromaticity in the region thereof. For example, chromaticity and color difference of each position are defined as follows. In this case, the color adjustment unit 18 may be configured to adjust the color difference Δ in addition to satisfying the color difference condition described later 1 With a chromatic aberration delta 2 Difference (delta) 1 －Δ 2 ) In this way, chromaticity is gradually reduced from a position adjacent to the antenna portion to a position not adjacent to the antenna portion (outer edge portion). As a result, the color tone adjusting section 18 has chromaticity closer to the transparent substrate 11 as it is farther from the antenna section 13, and thus can more appropriately perform a function of adjusting color difference.
Chromaticity C 3 : the chromaticity (L) of the outer edge portion, which is the position of the tone adjustment portion 18 not adjacent to the antenna portion 3 ＊，a 3 ＊，b 3 ＊)
Chromaticity C 4 : chromaticity (L) of transparent substrate 4 ＊，a 4 ＊，b 4 ＊)
Color difference delta 1 : chromaticity C 3 And chromaticity C 4 Chromatic aberration between
Color difference delta 2 : chromaticity C 2 And chromaticity C 4 Chromatic aberration between
The color adjustment unit 18 may be formed of two or more regions having different chromaticity. For example, the tone adjustment unit 18 may have a 1 st tone adjustment unit adjacent to the antenna unit 13 and a 2 nd tone adjustment unit adjacent to the 1 st tone adjustment unit. In this case, an example If the chromaticity and the chromatic aberration at each position are defined as follows, the 1 st tone adjustment portion can be made to satisfy the chromatic aberration condition described later, and the 2 nd tone adjustment portion can be made to have the chromatic aberration Δ 2 With a chromatic aberration delta 1 ' difference between (delta) 2 －Δ 1 ') is a positive color difference. Thus, the 1 st color tone adjustment portion near the antenna portion 13 may have a chromaticity relatively close to the antenna portion 13, and the 2 nd color tone adjustment portion far from the antenna portion 13 may have a chromaticity relatively close to the transparent substrate 11. Therefore, the function of adjusting the chromatic aberration can be more appropriately exhibited.
Chromaticity C 2 : chroma of the 1 st tone adjustment part (L) 2 ＊，a 2 ＊，b 2 ＊)
Chromaticity C 3 ': chroma of the 2 nd tone adjustment part (L) 3 ’＊，a 3 ’＊，b 3 ’＊)
Chromaticity C 4 : chromaticity (L) of transparent substrate 4 ＊，a 4 ＊，b 4 ＊)
Color difference delta 1 ': chromaticity C 3 ' and chromaticity C 4 Chromatic aberration between
Color difference delta 2 : chromaticity C 2 And chromaticity C 4 Chromatic aberration between
The color tone adjustment portion 18 may be disposed on the 1 st main surface of the transparent base material 11, may be disposed on the 2 nd main surface of the transparent base material 11, and may be disposed on both the 1 st main surface and the 2 nd main surface of the transparent base material 11, and the color tone adjustment portion 18 is preferably disposed on the 1 st main surface of the transparent base material 11 from the viewpoint of ease of patterning. The case where the color adjustment section 18 is disposed on the 1 st main surface will be described as an example.
Fig. 22 is an enlarged view of the S2 portion of fig. 16 and 18 showing the 2 nd pattern 151 constituting the color adjustment portion 18. The tone adjustment portion 18 has a 2 nd pattern 151 and an opening 152. For example, the 2 nd pattern 151 includes a grid or dots made of thin lines. The unit shape of the mesh is not particularly limited, and examples thereof include triangles, quadrilaterals, hexagons, and the like.
The 2 nd pattern 151 may be formed of conductive thin lines or nonconductive thin lines. Among them, from the viewpoints of ease of tone adjustment and ease of pattern formation, the 2 nd pattern 151 is preferably made of conductive thin lines, and is preferably made of the same material as the 1 st pattern 131 constituting the antenna portion 13. If the 2 nd pattern 151 is made of conductive thin lines, it is preferable in that the generation of radio waves in the film in-plane direction can be suppressed, and in that the antenna anisotropy in the out-of-plane direction of the film can be exhibited. This is presumably because, when the 2 nd pattern 151 is formed of conductive thin lines, there is a radio wave absorber in the in-plane direction. The color tone adjustment portion 18 is not electrically connected to the conductive thin lines in the 1 st pattern 131. The conductive thin lines constituting the 2 nd pattern 151 may or may not be electrically conductive to each other in the region of the tone adjustment portion 18.
Examples of the nonconductive fine line include ink. By matching the hue of the ink with the hue of the conductive thin lines of the 1 st pattern 131, visibility can be further suppressed.
(line width W of pattern 2) 2 )
Line width W of fine lines constituting pattern 2 151 2 Preferably from 0.25 μm to 5.0 μm, more preferably from 0.5 μm to 4.0 μm, and even more preferably from 1.0 μm to 3.0 μm. By making the line width W of the conductive thin line 2 With this range, the conductive thin lines constituting the 2 nd pattern 151 can be made invisible. Line width W of embodiment 3 2 Refers to the line width of the thin line when the thin line is projected onto the surface of the transparent substrate 11 from the surface side of the transparent substrate 11 where the 2 nd pattern 151 is arranged.
(thickness T) 2 )
Thickness T of thin line constituting pattern 2 151 2 Preferably 10nm or moreAnd 1000nm or less, more preferably 50nm or more, still more preferably 75nm or more. By making the thickness T of the thin lines constituting the 2 nd pattern 151 2 When the particle size is 10nm or more, the conductivity tends to be further improved. On the other hand, by making the thickness T of the thin wire 2 Is 1000nm or less, thereby suppressing visibility at a wide viewing angle. Thickness T of thin lines constituting pattern 2 151 of embodiment 3 2 The maximum value in the direction perpendicular to the interface between the transparent substrate 11 and the conductive thin line within the line width of the thin line constituting the 2 nd pattern 151 defined above is included in the non-conductor portion which does not contribute to conduction, such as a void in the thin line and an adhesive layer.
(aspect ratio)
From the line width W relative to the thin lines constituting the 2 nd pattern 151 2 Thickness T of the fine wire of (2) 2 Expressed aspect ratio (T 2 /W 2 ) Preferably from 0.05 to 2.00. The lower limit of the aspect ratio is more preferably 0.08 or more, and still more preferably 0.10 or more. By setting the thickness-to-width ratio to 0.05 or more, conductivity tends to be further improved without decreasing transmittance. If the thickness-to-width ratio (T) 2 /W 2 ) When the ratio is 2.00 or less, the durability and adhesion of the conductive thin wire tend to be improved, which is preferable. The detailed mechanism of improving the durability and adhesion of the conductive thin wire is not known, and it is considered that the improvement of the thickness-to-width ratio (T 2 /W 2 ) Since the passivation film for improving durability is less than 2.00, defects are less likely to occur, and the shearing force in the in-plane direction of the conductive thin line is physically strong.
(pitch P) 2 )
Pitch P of pattern 2 151 2 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the pitch P of the 2 nd pattern 151 2 A transmittance of 5 μm or more can be obtained. In addition, the pitch P of the 2 nd pattern 151 2 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the pitch P of the 2 nd pattern 151 2 The thickness is 1000 μm or less, and thus conductivity tends to be further improved. Further, pitch P 2 Guiding the distance and line width W between the electric thin lines 2 A kind of electronic device.
(aperture ratio)
The aperture ratio of the 2 nd pattern 151 is preferably 60% or more, more preferably 70% or more, further preferably 80% or more, and still further preferably 90% or more. By setting the aperture ratio of the 2 nd pattern 151 to be equal to or larger than this value, the visible light transmittance of the transparent antenna tends to be further improved. The aperture ratio of the 2 nd pattern 151 is preferably less than 100%, and more preferably 95% or less. The method of calculating the aperture ratio is the same as that of the 1 st pattern 131 described above.
< color difference >
A position P of the color adjustment unit 18 adjacent to the antenna unit 13 in plan view a Chromaticity C of (2) 2 (L 2 ＊，a 2 ＊，b 2 X) and the chromaticity C of the antenna portion 13 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less. By satisfying such a color difference condition, the visibility of the antenna portion 13 can be suppressed. The color difference is preferably 6.5 or less, more preferably 3.2 or less, and further preferably 1.6 or less. By setting the chromatic aberration to this range, the visibility of the antenna portion 13 can be suppressed. The color difference is not particularly limited, and may be, for example, 0.2 or more.
The color tone adjustment unit 18 preferably has a color difference Δ defined as follows 3 With a chromatic aberration delta 2 Difference (delta) 3 －Δ 2 ) Positive chromatic aberration. As a result, the color tone adjusting section 18 has chromaticity in the middle between the antenna section 13 and the transparent substrate 11, and thus can more appropriately perform a function of adjusting color difference.
Chromaticity C 4 : chromaticity (L) of transparent substrate 4 ＊，a 4 ＊，b 4 ＊)
Color difference delta 3 : chromaticity C 1 And chromaticity C 4 Chromatic aberration between
Color difference delta 2 : chromaticity C 2 And chromaticity C 4 Chromatic aberration between
For chromaticity C 2 Position P at which measurement is performed a The position of the tone adjustment portion 18 adjacent to the antenna portion 13 in a plan view is, for example, the position shown in fig. 16.
The chromaticity in embodiment 3 is a value expressed by color coordinates in the CIE l× a× b× color space. The color difference can be measured by measuring the color difference of the surface based on JIS Z8729-2004 "color representation method-Lxaa-b-color representation system".
(surface resistivity of the tone adjustment portion)
When the tone adjustment portion 18 is made of conductive thin wires, the surface resistivity of the tone adjustment portion is preferably 0.1 Ω/sq or more and 1000 Ω/sq or less, more preferably 0.1 Ω/sq or more and 500 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 300 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 200 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 100 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 20 Ω/sq or less, still more preferably 0.1 Ω/sq or more and 10 Ω/sq or less. The lower the area resistivity is, the more the power loss tends to be suppressed, and the sensitivity as an antenna can be improved.
The surface resistivity tends to decrease with an increase in the thickness-to-width ratio (thickness) of the conductive thin line. The surface resistivity can also be adjusted by selecting the type of metal material constituting the conductive thin line.
(haze of the tone adjustment portion)
The haze of the color adjusting portion 18 is preferably 0.01% or more and 5.00% or less. The upper limit of the haze is more preferably 4.00% or less, and still more preferably 3.00% or less. When the upper limit of the haze is 5.00% or less, the blurring of the conductive film with respect to visible light can be sufficiently reduced. The haze in the present specification can be determined according to JIS K7136: haze of 2000 was measured.
The antenna portion 13 and the tone adjustment portion 18 are arranged so as to reduce abrupt changes in tone of the boundary of the peripheral portion of the antenna portion 13 and suppress visibility of the shape of the antenna portion 13 in plan view.
Fig. 23 is an enlarged view of the portion S3 in fig. 16 and 18 showing the boundary between the antenna portion 13 and the tone adjustment portion 18. The antenna unit 13 and the tone adjustment unit 18 in the transparent antenna 1 according to embodiment 3 may be disposed through the non-conductive region 181. Width W of non-conductive region 181 3 Preferably 5 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. By making the width W of the non-conductive region 181 3 The transmittance is 5 μm or more, and good transmittance can be maintained. In addition, the width W of the non-conductive region 181 3 Preferably 1000 μm or less, more preferably 500 μm or less, and still more preferably 250 μm or less. By making the width W of the non-conductive region 181 3 In this range, the visibility of the non-conductive region 181 can be suppressed, and a transparent antenna in which the visibility of the antenna portion 13 is suppressed can be obtained.
As another embodiment, the color adjustment unit 18 may be disposed so as to overlap a part of the antenna unit 13 in a plan view. More specifically, the color adjustment portion 18 may be disposed on the 2 nd main surface so that a part thereof overlaps the antenna portion 13 formed on the 1 st main surface in a plan view.
Transparent substrate >, a transparent substrate
The term "transparent" of the transparent substrate means that the visible light transmittance is preferably 80% or more, more preferably 90% or more, and even more preferably 95% or more. Here, the visible light transmittance can be set in accordance with JIS K7361-1: 1997.
The material of the transparent substrate is not particularly limited, and examples thereof include transparent inorganic substrates such as glass; transparent organic substrates such as acrylates, methacrylates, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonates, polyarylates, polyvinylchloride, polyethylene, polypropylene, polystyrene, nylon, aromatic polyamides, polyetheretherketone, polysulfone, polyethersulfone, polyimide, and polyetherimide. Among them, polyethylene terephthalate, polyimide or polyethylene naphthalate is preferable. By using polyethylene terephthalate, productivity (cost reduction effect) for producing a conductive film is more excellent, and adhesion between a transparent substrate and a conductive thin line tends to be further improved. Further, the use of polyimide tends to further improve the heat resistance of the conductive thin film. Further, the use of polyethylene naphthalate tends to provide more excellent adhesion between the transparent substrate and the conductive thin line.
The transparent base material may be composed of 1 kind of material, or may be composed of two or more kinds of materials stacked. In the case where the transparent substrate is a multilayer body formed by laminating two or more materials, the transparent substrate may be a substrate formed by laminating organic substrates or a substrate formed by laminating inorganic substrates, or may be a substrate formed by laminating organic substrates and inorganic substrates.
The thickness of the transparent substrate is preferably 5 μm or more and 500 μm or less, more preferably 10 μm or more and 100 μm or less.
< intermediate layer >)
The transparent antenna 1 of embodiment 3 may have an intermediate layer between the transparent base material and the conductive portion. The intermediate layer can contribute to improving adhesion between the transparent substrate and the conductive thin line of the conductive portion. As the intermediate layer, the same intermediate layer as that described in embodiment 2 can be exemplified.
[ method for manufacturing transparent antenna ]
The same method as in embodiment 2 can be used except that a tone adjustment section is provided in the method for manufacturing a transparent antenna according to embodiment 3.
[ RF tag ]
The RF tag 100 of embodiment 3 may have the same configuration as the RF tag of embodiment 2 except that it has a tone adjustment unit.
Examples
Hereinafter, the present utility model will be described more specifically with reference to examples and comparative examples. The present utility model is not limited in any way by the following examples.
[ example 1 ]
A composition comprising 2 wt% of silica particles, 1 wt% of a conductive organosilane compound, 65 wt% of 2-propanol, 25 wt% of 1-butanol, and 7 wt% of water was applied to one surface on which no adhesive layer was formed, and then dried to form the 1 st outermost layer of a silica-containing film having a thickness of 50nm and containing silica, to obtain a base material A, using a polyethylene terephthalate (PET) film (manufactured by Toyobo Co., ltd., product name Cosmoshine A4100, film thickness of 50 μm) having an adhesive layer formed on one surface.
Next, 20 parts by mass of cuprous oxide nanoparticles having a particle diameter of 21nm, 4 parts by mass of a dispersant (product name: disperbyk-145, manufactured by BYK-Chemie Co., ltd.), 1 part by mass of a surfactant (product name: S-611, manufactured by SEIMI CHEMICAL Co., ltd.), and 75 parts by mass of ethanol were mixed and dispersed to prepare an ink containing 20% by mass of cuprous oxide nanoparticles.
Then, ink is applied to the transfer medium surface, and the transfer medium surface coated with the ink is brought into contact with the plate having the grooves of the conductive pattern by pressing the plate against the plate, so that a part of the ink on the transfer medium surface is transferred to the convex portion surface of the plate. Then, the surface of the transfer medium coated with the remaining ink is opposed to the substrate a and pressed to be in contact with the substrate a, whereby the ink having a desired conductive pattern is transferred onto the 1 st outermost layer of the substrate a. Next, using Pulseforge1300 manufactured by novacetrix corporation, conductive pattern-shaped ink (dispersion-coated film) was fired by flash annealing in a room temperature environment. Thus, an RF tag of the type shown in fig. 1 and 2 was obtained.
The conductive pattern of the antenna part has a square grid shape and a line width W 2 1.4 μm, gap G 2 Visible light transmittance Tr of 60 μm 2 88%. In addition, the conductivity pattern of the joint portionSquare grid pattern, line width W 1 1.4 μm, gap G 1 Is 3 μm. Further, it is found from an examination of the cross section of the conductive thin wire of the antenna portion of example 1 that the conductive thin wire is W, both in the joint portion and in the antenna portion 0.50 /W 0 Greater than W 0.90 /W 0.50 Is a thin wire of (c). In addition, S Vtotal /S M 0.40, S V0.2 /S Vtotal 0.22, S V0.8 /S Vtotal 0.88, (S) V0.2 +S V0.8 )/S Vtotal The void existing in the conductive thin line was biased to the base material side at 1.11.
The antenna pattern was a dipole antenna as shown in fig. 2, in which two pieces were provided at 2mm intervals on a rectangle having a length of 49mm and a width of 10mm, and the gap between the joint portions was 150 μm.
A semiconductor element was mounted on the bonding portion formed as described above using an anisotropic conductive paste (TAP 0644F made of jingzhu). Then, an acrylic optically transparent adhesive (OCA, GUNZE corporation NNX M) was applied over the entire antenna portion and semiconductor element from above to form an adhesive layer, thereby obtaining an RF tag.
The film including the RF tag was a film having a width of 120mm and a length of 120mm, and a glass plate having a width of 120mm, a length of 120mm and a thickness of 3mm was bonded as a base material via an adhesive layer. The radiation characteristics of the obtained RF tag were measured, and as a result, antenna characteristics having a communication distance of 0.5m were obtained under the condition of 920 MHz.
[ example 2 ]
Line width W of joint part 1 And the line width W of the antenna part 2 An RF tag was obtained in the same manner as in example 1 except that the thickness was set to 3 μm. As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 1, the antenna characteristics with a communication distance of 1.5m were obtained under the condition of 920 MHz.
[ example 3 ]
An RF tag was obtained in the same manner as in example 2, except that an acrylic optically transparent adhesive (OCA, GUNZE corporation NNX M) was applied only to the entire antenna portion to form an adhesive layer. As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 2, the antenna characteristics with a communication distance of 1.5m were obtained under the condition of 920 MHz.
[ example 4 ]
An RF tag was obtained in the same manner as in example 2, except that an acrylic optically transparent adhesive (OCA, GUNZE corporation NNX M) was applied to only a part of the antenna portion to form an adhesive layer. As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 2, the antenna characteristics with a communication distance of 1.5m were obtained under the condition of 920 MHz.
[ example 5 ]
An RF tag was obtained in the same manner as in example 2, except that a pattern that served as both a transmittance adjuster and a color adjuster was provided around the antenna portion. Specifically, the line width W is set around the antenna pattern 2 :3.0 μm and gap G 2 The pattern changed from 100 μm to 500 μm every 1mm was set in a rectangular shape as the 1 st transmittance adjustment section (1 st tone adjustment section). A gap G is provided around the 1 st transmittance adjustment section (1 st color adjustment section) 2 The 2 nd transmittance adjustment section (2 nd color adjustment section) was formed in a pattern of 1000 μm up to the end of the thin film. The antenna pattern is adjacent to the 1 st transmittance adjustment unit (1 st color adjustment unit) with a non-conductive region 171 having a width of 100 μm interposed therebetween.
Visible light transmittance Tr of the 1 st transmittance adjustment portion 2 Continuously increasing from 86% to 91%.
Further, the color difference was measured by reflection measurement using a Kenican Megakuda spectrometer CM-3600A with a field of view of 2 degrees and a main light source D65. Gap G 2 The color difference between the 2 nd tone adjustment portion and the antenna pattern was 2.8, and the tone of the 1 st tone adjustment portion was continuously and monotonously reduced from the antenna portion, and the boundary portions were not clearly observed.
As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 1, the antenna characteristics with a communication distance of 1.5m were obtained under the condition of 920 MHz.
Comparative example 1
An RF tag was obtained in the same manner as in example 1 except that the adhesive layer was not formed. As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 1, the antenna characteristics with a communication distance of 0.5m were obtained under the condition of 920 MHz.
Comparative example 2
In the same manner as in example 1, an antenna pattern of a dipole antenna was formed by bonding aluminum rolled on a continuous foil having a thickness of 12 μm with a transparent urethane resin adhesive (12 parts by weight of a main agent: a polyester urethane polyol having an average molecular weight of 30000, 1 part by weight of a curing agent: a xylylene diisocyanate-based prepolymer), and then etching the aluminum, wherein two pieces were arranged on a rectangle having a length of 49mm and a width of 10mm as shown in fig. 2 at a distance of 2mm, and the gap between the bonded portions was 150 μm. After the antenna pattern was formed, an RF tag was formed in the same manner as in example 1. As a result of measuring the radiation characteristics of the RF tag in the same manner as in example 1, the antenna characteristics with a communication distance of 2.0m were obtained under the condition of 920 MHz.
[ line width, pitch and area occupancy ]
Line width, pitch and area occupancy were calculated from a top view photograph obtained by an optical microscope.
SEM observation of conductive thin wire section
From the obtained conductive thin film, a few mm square chip was cut out, and a BIB process was performed by the above method under an acceleration voltage of 4kV using SM-09010CP manufactured by Japanese electric Co., ltd.) to prepare a measurement sample including a cross section of the conductive thin line orthogonal to the extending direction of the conductive thin line. Next, os plasma coating treatment for imparting conductivity was performed on the cross-sectional surface of the conductive thin wire.
Then, an SEM image of a cross section of the conductive thin wire was obtained under the following conditions using a scanning electron microscope (SU 8220) manufactured by Hitachi High-Technologies Corporation.
Acceleration voltage: 1kV
Emission current: 10 mu A
Measurement magnification: 50000 times
Detector: upper detector
Working distance: about 3mm
First, from SEM images of the cross sections of the obtained conductive thin lines, the average value of the maximum thickness T and the line width W from the conductive thin line interface on the substrate side to the thin line surface and the respective CVs were calculated. In the measurement, an average value and CV were obtained at arbitrary 9-point positions in the measurement plane.
Image analysis of SEM images of sections of conductive thin lines was performed using image processing software ImageJ. Specifically, regarding the SEM image (8 bits), only a cross section of the conductive thin line was extracted, and fine noise contained in the image was removed by median filtering processing. Next, binarization processing is performed on the cross section of the extracted conductive thin wire, and S is calculated separately M 、S Vtotal 、S V0.2 And S is V0.8 And calculate S Vtotal /S M 、S V0.2 /S Vtotal 、S V0.8 /S Vtotal Sum (S) V0.2 +S V0.8 )/S Vtotal . Then, the width W of the conductive thread at the interface of the conductive thread is calculated 0 Width W of the conductive thin line at a height of 0.50T and 0.90T from the conductive thin line interface on the substrate side 0.50 、W 0.90 . Respectively calculating W using them 0.50 /W 0 、W 0.90 /W 0.50 。
[ evaluation of information extraction prevention function ]
The adhesive layer of the RF tag obtained as described above is peeled off from the base material. After that, it was confirmed whether or not communication with the RF tag was possible, and the state of breakage of the conductive thin line was confirmed.
In each of examples 1 to 5, the antenna portion was disconnected and separated from the base material, and communication as an RF tag was not performed. In examples 1 to 5, the conductive thin wire was broken, and the antenna portion was broken by peeling, so that it was difficult to reuse the peeled RF tag. From an SEM photograph of the state of the broken conductive thin line of example 2, it was found that the 2 nd separation portion, which is a part of the conductive thin line after peeling and breaking, remained on the substrate 11 side, and a part in the height direction (trace after the 1 st separation portion was taken away) of the peeled portion remained on the substrate 11 side. The residue of the conductive thin line remaining as the trace is also contained in the 2 nd separation portion.
In example 2, the broken trace clearly remained on both the glass side after peeling and the RF tag after peeling, and it was found that peeling occurred. In example 5, as in the antenna section, a part of the conductive thin line of the transmittance adjustment section was broken, and a broken trace clearly remained on both the peeled glass side and the peeled RF tag, so that it was difficult to form a boundary with the antenna section, and the effect of suppressing reuse of the peeled RF tag was high.
On the other hand, in comparative example 1, disconnection of the antenna section was not observed, and communication was possible as an RF tag. In comparative example 2, a part of the antenna portion was broken due to peeling, but communication was possible even after peeling, and the breakage was insufficient.
The results of examples and comparative examples are shown in table 1 below.
TABLE 1
The color difference is calculated by the chromaticity C of the color adjusting part at the position adjacent to the antenna part in the overlook perspective view 2 (L 2 ＊，a 2 ＊，b 2 X) and the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
And (5) obtaining.
Industrial applicability
The present utility model is industrially applicable as an RF tag that can be used for RFID or the like, particularly for applications requiring information extraction prevention.
Description of the reference numerals
10. An antenna; 11. a substrate; 12. a current collecting section; 121. a joint; 13. an antenna section; 14. a semiconductor element; 15. an anisotropic conductive adhesive; 16. an adhesive layer; 17. a transmittance adjustment unit; 18. a color tone adjusting section; 171 181, non-conductive regions; 19. a conductive adhesive layer; 100. an RF tag; 131. pattern 1; 132. an opening portion; 151. pattern 2; 152. an opening portion; 200. a conductive thin wire; 300. 1 st conductive pattern; 301. a 1 st opening portion; 400. a 2 nd conductive pattern; 401. and a 2 nd opening.
Claims (15)
1. An RF tag, characterized in that,
the RF tag includes:
a substrate;
an antenna unit disposed on the base material;
a semiconductor element electrically connected to the antenna unit; and
an adhesive layer formed so as to cover at least a part of both the antenna portion and the semiconductor element,
the antenna part has a line width W 2 Conductive fine wires of 0.25 μm or more and 5.0 μm or less,
when the adhesive layer is peeled off from the antenna portion, the adhesive layer carries away the 1 st separation portion including at least a part of the conductive thread, and the 2 nd separation portion including the other part of the conductive thread other than the part of the conductive thread remains on the base material.
2. The RF tag of claim 1, wherein,
the 1 st separation section includes the semiconductor element.
3. The RF tag of claim 1, wherein,
the 2 nd separation portion includes the semiconductor element.
4. An RF tag as claimed in any one of claims 1 to 3, wherein,
the 1 st separation portion is a portion of the conductive thin wire and includes a portion of the conductive thin wire on the side of the adhesive layer in the height direction, and the 2 nd separation portion is another portion of the conductive thin wire and includes another portion of the conductive thin wire on the side of the base material corresponding to the portion of the conductive thin wire on the side of the adhesive layer.
5. An RF tag as claimed in any one of claims 1 to 3, wherein,
the antenna part comprises a conductive pattern having conductive fine lines, and the conductive pattern has visible light transmittance Tr 1 More than 80%.
6. An RF tag as claimed in any one of claims 1 to 3, wherein,
gap G of the conductive thin line 2 Is 60 μm or more and 300 μm or less.
7. An RF tag as claimed in any one of claims 1 to 3, wherein,
the substrate is a transparent substrate.
8. An RF tag as claimed in any one of claims 1 to 3, wherein,
the substrate is a transparent substrate having a 1 st main surface and a 2 nd main surface, the thin line pattern portion having the conductive thin line satisfies any one of the following conditions (i) and (ii),
(i) The optical element comprises a transmittance adjustment unit composed of a 2 nd pattern, which is arranged on at least one of the 1 st main surface and the 2 nd main surface of the transparent base material and is formed on at least the periphery of the antenna unit in a plan view,
the transmittance adjustment unit is visible at a position adjacent to the antenna unit in a plan viewLight transmittance Tr 21 Visible light transmittance Tr with the antenna portion 1 Absolute value of difference |Tr 21 －Tr 1 The I is less than 10 percent,
(ii) Comprises a color adjustment section which is disposed on at least one of the 1 st main surface and the 2 nd main surface of the transparent substrate and is formed on at least the periphery of the antenna section in a plan view,
chromaticity C of the color tone adjusting portion at a position adjacent to the antenna portion in plan view 2 (L 2 ＊，a 2 ＊，b 2 And the chromaticity C of the antenna part 1 (L 1 ＊，a 1 ＊，b 1 Chromatic aberration between
Is 10 or less.
9. An RF tag as claimed in any one of claims 1 to 3, wherein,
the 1 st separation portion and the 2 nd separation portion are formed by an adhesive strength between the conductive thin wire and the adhesive layer or the base material constituting the antenna portion, fineness of the conductive thin wire, variation in height of the conductive thin wire, a cross-sectional shape of the conductive thin wire, or a void in a case where the cross-section of the conductive thin wire forms the void.
10. An RF tag as claimed in any one of claims 1 to 3, wherein,
the adhesive layer has an adhesive force that, when peeled from the base material, brings away at least any one of at least a part of the antenna portion and the semiconductor element.
11. An RF tag as claimed in any one of claims 1 to 3, wherein,
the adhesion force of the adhesive layer is at least higher than the breaking strength of the conductive thread constituting at least a part of the antenna section.
12. An RF tag as claimed in any one of claims 1 to 3, wherein,
the conductive thin wire has a void at an interface of the conductive thin wire on the substrate side, and a part of the void is distributed in a cross section of the conductive thin wire.
13. The RF tag as recited in claim 8, wherein,
visible light transmittance Tr in the 2 nd pattern 21 The number of the antenna portions is increased stepwise or continuously from a position adjacent to the antenna portion to a peripheral edge portion of the base material in plan view, or is decreased stepwise or continuously.
14. An antenna, characterized in that,
the antenna is provided with:
a substrate;
an antenna unit disposed on the base material; and
an adhesive layer formed so as to cover at least a part of the antenna section,
the antenna part has a line width W 2 When the adhesive layer is peeled from the antenna portion, the adhesive layer carries away the 1 st separation portion including at least a part of the conductive thin line, and the 2 nd separation portion including the other part of the conductive thin line other than the part of the conductive thin line remains on the base material.
15. An RF tag carrying article, characterized in that,
the RF tag attached article includes the RF tag according to any one of claims 1 to 3 and an object to which the RF tag is attached.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020022878 | 2020-02-13 | ||
| JP2020-022878 | 2020-02-13 | ||
| JP2020-022802 | 2020-02-13 | ||
| JP2020022877 | 2020-02-13 | ||
| JP2020-022877 | 2020-02-13 | ||
| JP2020022802 | 2020-02-13 | ||
| PCT/JP2021/005290 WO2021162100A1 (en) | 2020-02-13 | 2021-02-12 | Rf tag, method of using same, and antenna |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219225549U true CN219225549U (en) | 2023-06-20 |
Family
ID=77292720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202190000289.0U Active CN219225549U (en) | 2020-02-13 | 2021-02-12 | RF tag, antenna, and RF tag attached article |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7525590B2 (en) |
| CN (1) | CN219225549U (en) |
| WO (1) | WO2021162100A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421175B (en) * | 2022-03-04 | 2023-02-14 | 浙江大学 | Large-incidence-angle stable suction-transmission integrated conformal frequency selective surface |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4046167B2 (en) | 1998-08-12 | 2008-02-13 | リンテック株式会社 | Non-contact data carrier label |
| JP2000105807A (en) | 1998-09-29 | 2000-04-11 | Toshiba Chem Corp | Label type noncontact data carrier |
| JP3854124B2 (en) | 2001-11-08 | 2006-12-06 | 日立化成工業株式会社 | Non-contact IC label |
| JP4163579B2 (en) | 2003-08-28 | 2008-10-08 | トッパン・フォームズ株式会社 | Non-contact IC label |
| JP4455859B2 (en) | 2003-09-30 | 2010-04-21 | トッパン・フォームズ株式会社 | Non-contact IC label |
| JP4590908B2 (en) * | 2004-04-09 | 2010-12-01 | 凸版印刷株式会社 | Non-contact IC medium and method of manufacturing non-contact IC medium |
| JP2006209616A (en) | 2005-01-31 | 2006-08-10 | Toppan Forms Co Ltd | Contactless ic label |
| JP5651443B2 (en) * | 2010-11-29 | 2015-01-14 | 株式会社ユポ・コーポレーション | Label with circuit |
| KR20140030120A (en) * | 2010-12-16 | 2014-03-11 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Transparent micropatterned rfid antenna and articles incorporating same |
| FR3044962B1 (en) | 2015-12-10 | 2017-12-22 | Saint Gobain | GLAZING HAVING AN ELECTRICAL CONDUCTIVE DEVICE HAVING IMPROVED RESISTANCE TO CYCLIC TEMPERATURE TESTS. |
| JP2017227959A (en) * | 2016-06-20 | 2017-12-28 | 凸版印刷株式会社 | Contactless type information medium and contactless type information medium manufacturing method |
| JP2019211243A (en) * | 2018-05-31 | 2019-12-12 | 旭化成株式会社 | RFID tag |
-
2021
- 2021-02-12 JP JP2022500475A patent/JP7525590B2/en active Active
- 2021-02-12 CN CN202190000289.0U patent/CN219225549U/en active Active
- 2021-02-12 WO PCT/JP2021/005290 patent/WO2021162100A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP7525590B2 (en) | 2024-07-30 |
| WO2021162100A1 (en) | 2021-08-19 |
| JPWO2021162100A1 (en) | 2021-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9251458B2 (en) | Selective deposition of magnetic particles and using magnetic material as a carrier medium to deposit nanoparticles | |
| TWI495190B (en) | Non-contact ic tag | |
| CN208889828U (en) | Magnetic isolation device and electronic device including the Magnetic isolation device | |
| Yang et al. | Design, fabrication and applications of flexible RFID antennas based on printed electronic materials and technologies | |
| JP5850784B2 (en) | Booster antenna and manufacturing method thereof | |
| JP2008107947A (en) | Rfid tag | |
| US9053406B2 (en) | Antenna circuit constituent body for IC card/tag and method for manufacturing the same | |
| US20150186768A1 (en) | Transparent rfid antenna | |
| CN219225549U (en) | RF tag, antenna, and RF tag attached article | |
| CN108370085A (en) | Magnetic isolation device, its production method and the device for including the Magnetic isolation device | |
| JP6710018B2 (en) | Method for manufacturing conductive pattern substrate | |
| JP7516060B2 (en) | Transparent antenna and RF tag | |
| KR20170010734A (en) | Shielding unit for wireless charging | |
| JP2004054337A (en) | Ic chip mount body | |
| KR20110010766A (en) | Antenna circuit configuring body for ic card/tag, and ic card | |
| CN112514004B (en) | Conductive film, and conductive film roll and electronic paper using same | |
| JP2006127424A (en) | Radio tag | |
| JP6885413B2 (en) | Manufacturing method of conductive pattern substrate | |
| JP6520143B2 (en) | Laminate, method of manufacturing conductive substrate using the same, method of manufacturing electronic device, and transfer tool | |
| WO2021161972A1 (en) | Transparent antenna and rf tag | |
| JP7517838B2 (en) | RF tag and transparent antenna | |
| EP2784724A2 (en) | Selective deposition of magnetic particles, and using magnetic material as a carrier medium to deposit other particles | |
| Hayata et al. | Printed high-frequency RF identification antenna on ultrathin polymer film by simple production process for soft-surface adhesive device | |
| JP6459565B2 (en) | Laminated wiring board | |
| JP2009123058A (en) | Non-contact type ic tag and production method for non-contact type ic tag |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |