CN219106160U - Optocoupler package structure - Google Patents
Optocoupler package structure Download PDFInfo
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- CN219106160U CN219106160U CN202320205341.7U CN202320205341U CN219106160U CN 219106160 U CN219106160 U CN 219106160U CN 202320205341 U CN202320205341 U CN 202320205341U CN 219106160 U CN219106160 U CN 219106160U
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- insulating layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
An optocoupler package structure includes a wafer and two or more optocouplers disposed on the wafer. Each of the two or more optical couplers includes a first photodetector formed on the wafer, a second photodetector formed on the wafer, a first insulating layer disposed on the first photodetector and the wafer, a second insulating layer disposed on the second photodetector and the wafer, and a first light emitting diode disposed on the first insulating layer corresponding to the first photodetector. The first insulating layer is connected to the second insulating layer; the first shape of the first photodetector is the same as the second shape of the second photodetector.
Description
Technical Field
The present disclosure relates to packaging structures, and more particularly to an optocoupler packaging structure.
Background
An optical coupler (photo-coupler or opto-coupler) is a photoelectric conversion element for transmitting an electrical signal by using light (e.g., visible light or infrared light) as a medium, and basically includes a photo detector (photo detector) and a light emitting diode, and there is no electrical connection between the photo detector and the light emitting diode except for light. Optocouplers may be used for circuit isolation and photodiodes (photo diodes) or photo transistors (photo transmitters) may be used as photodetectors.
Currently, optocouplers can be divided into left-right (or lateral) structures and up-down (or opposite) structures; for the optocoupler with left-right structure, the LED and the photodetector respectively belong to the left-right relative positions in the optocoupler; for the optocoupler with up-down structure, the LED and the photodetector respectively belong to the up-down relative positions in the optocoupler.
However, the optocouplers of both the left-right type and the up-down type are assembled with the light emitting diode by separate mounting to the lead frame after the photodetector is singulated, so that the manufacturing cost of the process is too high.
Disclosure of Invention
In order to solve the above problems, an object of the present application is to provide an optocoupler package structure.
To achieve the above object of the present application, an optocoupler package of the present application includes: a wafer; and two or more optocouplers disposed on the wafer, wherein each of the two or more optocouplers comprises: a first photodetector formed on the wafer; a second photodetector formed on the wafer; a first insulating layer disposed over the first photodetector and the wafer; a second insulating layer disposed over the second photodetector and the wafer; and a first light emitting diode disposed on the first insulating layer corresponding to the first photodetector, wherein the first insulating layer is connected to the second insulating layer; the first shape of the first photodetector is the same as the second shape of the second photodetector.
Furthermore, each of the two or more optical couplers further comprises: the second light emitting diode is disposed on the second insulating layer corresponding to the second light detector.
Furthermore, in the first embodiment, the first insulating layer is a light-transmitting insulating layer; the second insulating layer is a light-transmitting insulating layer.
Furthermore, in the first embodiment, the optocoupler package further includes: two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
Furthermore, in a second embodiment, the first insulating layer includes: the first light-transmitting insulating layer is arranged on the first light detector and the wafer, and the first light-emitting diode is arranged on the first light-transmitting insulating layer corresponding to the first light detector; and a first light shielding insulating layer disposed on the first photodetector and the wafer, the first light shielding insulating layer surrounding the first light transmissive insulating layer.
Furthermore, in a second embodiment, the second insulating layer includes: the second light-transmitting insulating layer is arranged on the second light detector and the wafer, and the second light-emitting diode is arranged on the second light-transmitting insulating layer corresponding to the second light detector; and a second light shielding insulating layer disposed on the second photodetector and the wafer, the second light shielding insulating layer surrounding the second light transmitting insulating layer, wherein the first light shielding insulating layer is connected to the second light shielding insulating layer.
Furthermore, in a second embodiment, the optocoupler package further includes: two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
Furthermore, in a third embodiment, the first insulating layer includes: a first light shielding insulating layer disposed on the first photodetector and the wafer; and the first light-transmitting insulating layer is arranged on the first light detector, the wafer and the first shading insulating layer, and the first light-emitting diode is arranged on the first light-transmitting insulating layer corresponding to the first light detector.
Furthermore, in a third embodiment, the second insulating layer includes: a second light shielding insulating layer disposed on the second photodetector and the wafer; the second light-transmitting insulating layer is arranged on the second light detector, the wafer and the second shading insulating layer, the second light-emitting diode is arranged on the second light-transmitting insulating layer corresponding to the second light detector, and the first shading insulating layer is connected to the second shading insulating layer; the first light-transmitting insulating layer is connected to the second light-transmitting insulating layer.
Furthermore, in a third embodiment, the optocoupler package further includes: two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
The effect of the application is to reduce the process manufacturing cost of the optocoupler.
For a further understanding of the technology, means, and efficacy of the present application, reference should be made to the following detailed description of the application and to the accompanying drawings, which are included to provide a further understanding of the utility model, and to the specific features and objects of the application, however, are not to be taken in a limiting sense as reference to the accompanying drawings.
The foregoing summary is for the purpose of the specification only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present application will become apparent by reference to the drawings and the following detailed description.
Drawings
In the drawings, the same reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily drawn to scale. It is appreciated that these drawings depict only some embodiments according to the disclosure and are not therefore to be considered limiting of its scope.
Fig. 1 is a schematic diagram of an optocoupler package of the present application.
Fig. 2 is a schematic diagram of the basic stages of forming an optocoupler of the present application.
Fig. 3A is a schematic diagram of a first stage of forming a first embodiment of an optocoupler of the present application.
Fig. 3B is a schematic diagram of a second stage of forming a first embodiment of an optocoupler of the present application.
Fig. 4A is a schematic diagram of a first stage of forming a second embodiment of an optocoupler of the present application.
Fig. 4B is a schematic diagram of a second stage of forming a second embodiment of an optocoupler of the present application.
Fig. 4C is a schematic diagram of a third stage of forming a second embodiment of an optocoupler of the present application.
Fig. 5A is a schematic diagram of a first stage of forming a third embodiment of an optocoupler of the present application.
Fig. 5B is a schematic diagram of a second stage of forming a third embodiment of an optocoupler of the present application.
Fig. 5C is a schematic diagram of a third stage of forming a third embodiment of an optocoupler of the present application.
Reference numerals illustrate:
10: an optocoupler package;
20: a wafer;
30: an optical coupler;
40: bonding pads;
302: a first photodetector;
304: a second photodetector;
306: a first insulating layer;
308: a second insulating layer;
310: a first light emitting diode;
312: a second LED;
3061: a first light-transmitting insulating layer;
3062: a first light-shielding insulating layer;
3081: a second light-transmitting insulating layer;
3082: and a second light-shielding insulating layer.
Detailed Description
In the present disclosure, numerous specific details are provided to provide a thorough understanding of embodiments of the present application; however, it will be apparent to one skilled in the art that the present application may be practiced without one or more of these specific details; in other instances, well-known details are not shown or described in order to avoid obscuring the essential features of the present application. The technical content and detailed description related to the present application are described below with reference to the drawings:
please refer to fig. 1, which is a schematic diagram of an optocoupler package 10 of the present application. An optocoupler package 10 of the present application includes a wafer 20 and two or more optocouplers 30, the two or more optocouplers 30 being disposed on the wafer 20. The number of the two or more optical couplers 30 may be, for example, but is not limited to, one thousand.
Referring to fig. 2, a schematic diagram of the basic stages of forming the optocoupler 30 of the present application is shown; the upper half of fig. 2 is a top view, while the lower half of fig. 2 is a corresponding cross-sectional view. In the basic stage shown in fig. 2, the optocoupler package 10 further includes two or more bonding pads (bonding pads) 40, each of the two or more optocouplers 30 includes a first photodetector 302 and a second photodetector 304, and the two or more bonding pads 40, the first photodetector 302 and the second photodetector 304 are formed on the wafer 20. The first shape of the first photodetector 302 is the same as the second shape of the second photodetector 304.
After completing the basic stage shown in fig. 2, the present application includes a first embodiment, a second embodiment and a third embodiment, where the first embodiment corresponds to fig. 3A and 3B, the second embodiment corresponds to fig. 4A, 4B and 4C, and the third embodiment corresponds to fig. 5A, 5B and 5C, and the following details are described below:
first embodiment:
referring to fig. 3A, a schematic diagram of a first stage of forming a first embodiment of an optocoupler 30 of the present application is shown; the upper half of fig. 3A is a top view, while the lower half of fig. 3A is a corresponding cross-sectional view. For the first embodiment, after the basic stage shown in fig. 2 is completed, each of the two or more optical couplers 30 further includes a first insulating layer 306 and a second insulating layer 308, the first insulating layer 306 is disposed on the first photodetector 302 and the wafer 20, the second insulating layer 308 is disposed on the second photodetector 304 and the wafer 20, the first insulating layer 306 is a light-transmitting insulating layer, the second insulating layer 308 is a light-transmitting insulating layer, and the first insulating layer 306 is connected to the second insulating layer 308. The first insulating layer 306 and the second insulating layer 308 may be made of photoresist material or formed using a printing process. Then, the first embodiment enters the second stage shown in fig. 3B below.
Referring to FIG. 3B, a schematic diagram of a second stage of forming a first embodiment of the optocoupler 30 of the present application; the upper half of fig. 3B is a top view, while the lower half of fig. 3B is a corresponding cross-sectional view. Each of the two or more optical couplers 30 further includes a first light emitting diode 310 and a second light emitting diode 312, wherein the first light emitting diode 310 is disposed on the first insulating layer 306 corresponding to the first light detector 302 by transparent adhesive, and the second light emitting diode 312 is disposed on the second insulating layer 308 corresponding to the second light detector 304 by transparent adhesive.
Second embodiment:
referring to fig. 4A, a schematic diagram of a first stage of forming a second embodiment of the optocoupler 30 of the present application is shown; the upper half of fig. 4A is a top view, while the lower half of fig. 4A is a corresponding cross-sectional view. For the second embodiment, after the basic stage shown in fig. 2 is completed, each of the two or more optical couplers 30 further includes a first light-transmitting insulating layer 3061 and a second light-transmitting insulating layer 3081, the first light-transmitting insulating layer 3061 being disposed on the first light detector 302 and the wafer 20, the second light-transmitting insulating layer 3081 being disposed on the second light detector 304 and the wafer 20. The first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 may be made of a photoresist material or formed using a printing process. Then, the second embodiment enters the second stage shown in fig. 4B below.
Referring to FIG. 4B, a schematic diagram of a second stage of forming a second embodiment of the optocoupler 30 of the present application; the upper half of fig. 4B is a top view, while the lower half of fig. 4B is a corresponding cross-sectional view. Each of the two or more optical couplers 30 further includes a first light shielding insulating layer 3062 having a substantially square shape and a second light shielding insulating layer 3082 having a substantially square shape, the first light shielding insulating layer 3062 being disposed on the first photodetector 302 and the wafer 20, the first light shielding insulating layer 3062 surrounding the first light transmitting insulating layer 3061, the second light shielding insulating layer 3082 being disposed on the second photodetector 304 and the wafer 20, the second light shielding insulating layer 3082 surrounding the second light transmitting insulating layer 3081, the first light shielding insulating layer 3062 being connected to the second light shielding insulating layer 3082. The first light-shielding insulating layer 3062 and the second light-shielding insulating layer 3082 may be formed using a printing process, and may cover the first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 slightly (if the covered portion is thin and the light transmittance is acceptable; or the first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 may be exposed by polishing or etching the first light-shielding insulating layer 3062 and the second light-shielding insulating layer 3082, or may be referred to as "open" in a semiconductor process). The second embodiment then proceeds to the third stage shown in fig. 4C below.
Referring to fig. 4C, a schematic diagram of a third stage of forming a second embodiment of the optocoupler 30 of the present application; the upper half of fig. 4C is a top view, while the lower half of fig. 4C is a corresponding cross-sectional view. Each of the two or more optical couplers 30 further includes a first light emitting diode 310 and a second light emitting diode 312, wherein the first light emitting diode 310 is disposed on the first light-transmitting insulating layer 3061 by transparent adhesive corresponding to the first light detector 302, and the second light emitting diode 312 is disposed on the second light-transmitting insulating layer 3081 by transparent adhesive corresponding to the second light detector 304.
Third embodiment:
referring to fig. 5A, a schematic diagram of a first stage of forming a third embodiment of an optocoupler 30 of the present application is shown; the upper half of fig. 5A is a top view, while the lower half of fig. 5A is a corresponding cross-sectional view. For the third embodiment, after the basic stage shown in fig. 2 is completed, each of the two or more optical couplers 30 further includes a first light shielding insulating layer 3062 having a substantially square shape and a second light shielding insulating layer 3082 having a substantially square shape, the first light shielding insulating layer 3062 being disposed on the first photodetector 302 and the wafer 20, the second light shielding insulating layer 3082 being disposed on the second photodetector 304 and the wafer 20, the first light shielding insulating layer 3062 being connected to the second light shielding insulating layer 3082. The first light-shielding insulating layer 3062 and the second light-shielding insulating layer 3082 may be made of a photoresist material or formed using a printing process, and are opened to the first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 described below, so that the first light-shielding insulating layer 3062 and the second light-shielding insulating layer 3082 substantially determine the first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 described below. Then, the third embodiment enters the second stage shown in fig. 5B below.
Referring to FIG. 5B, a schematic diagram of a second stage of forming a third embodiment of the optocoupler 30 of the present application; the upper half of fig. 5B is a top view, while the lower half of fig. 5B is a corresponding cross-sectional view. Each of the two or more optical couplers 30 further includes a first light-transmitting insulating layer 3061 and a second light-transmitting insulating layer 3081, the first light-transmitting insulating layer 3061 being disposed on the first photodetector 302, the wafer 20, and the first light-shielding insulating layer 3062 to fill and slightly exceed the opening of the first light-shielding insulating layer 3062, the second light-transmitting insulating layer 3081 being disposed on the second photodetector 304, the wafer 20, and the second light-shielding insulating layer 3082 to fill and slightly exceed the opening of the second light-shielding insulating layer 3082, the first light-transmitting insulating layer 3061 being connected to the second light-transmitting insulating layer 3081. The first light-transmitting insulating layer 3061 and the second light-transmitting insulating layer 3081 may be formed using a printing process, and may cover a portion of the first light-shielding insulating layer 3062 and a portion of the second light-shielding insulating layer 3082 as shown in fig. 5B. Then, the third embodiment proceeds to the third stage shown in fig. 5C below.
Referring to FIG. 5C, a schematic diagram of a third stage of forming a third embodiment of an optocoupler 30 of the present application is shown; the upper half of fig. 5C is a top view, while the lower half of fig. 5C is a corresponding cross-sectional view. Each of the two or more optical couplers 30 further includes a first light emitting diode 310 and a second light emitting diode 312, wherein the first light emitting diode 310 is disposed on the first light-transmitting insulating layer 3061 by transparent adhesive corresponding to the first light detector 302, and the second light emitting diode 312 is disposed on the second light-transmitting insulating layer 3081 by transparent adhesive corresponding to the second light detector 304.
For the first embodiment, the second embodiment and the third embodiment, after completing fig. 3B, fig. 4C and fig. 5C, respectively, the two or more bonding pads 40 may be electrically connected to the two or more optocouplers 30 by, for example, a wire bonding technique (not shown on the drawings), so as to test whether the two or more optocouplers 30 function normally.
The patterning of the devices of the present application may include photolithography, compression molding, printing, direct writing, and the like; the photolithography is to change the property of the photoresist by exposing the photoresist, develop the photoresist to form a pattern directly, or form a pattern by etching or depositing after forming a mask of the pattern; the above-mentioned compression molding includes injection molding (transfer mode), compression molding (compression mode), embossing (molding) and the like; such printing includes screen printing, pad printing, transfer printing, and the like; such direct writing includes techniques such as extrusion drawing, photo curing, 3D printing related processes, and the like.
The application can use a transparent die bond (die bond) adhesive applied to the light emitting diode as the material of the transparent insulating layers; the application can use a dispensing machine (dispenser) to dispense the proper amount of die-attach adhesive material at the required position. One of the first photodetector 302 and the second photodetector 304 may be used as a primary photodetector and the other as a reference photodetector, wherein the reference photodetector is provided for the purpose of improving the accuracy and sensitivity of the operation of the optocoupler.
The effect of the application is to reduce the process manufacturing cost of the optocoupler.
However, the foregoing description is only exemplary embodiments of the present application, and the scope of the application, i.e. the equivalent changes and modifications, etc., should not be limited by the embodiments of the present application, but should be construed to fall within the scope of the patent coverage of this application. The present application is capable of other various embodiments and its several details are capable of modification and variation in light of the present application, all without departing from the spirit and substance of the present application, as will be apparent to one of ordinary skill in the art and of being covered by the present application. In summary, the present application has industrial applicability, novelty and creativity, and the structure of the present application is not found in the similar products and is disclosed, which completely accords with the requirements of the new patent application, and the patent application is filed according to the patent laws.
Claims (10)
1. An optocoupler package comprising:
a wafer; a kind of electronic device with high-pressure air-conditioning system
Two or more optical couplers disposed on the wafer,
wherein each of the two or more optical couplers includes:
a first photodetector formed on the wafer;
a second photodetector formed on the wafer;
a first insulating layer disposed over the first photodetector and the wafer;
a second insulating layer disposed over the second photodetector and the wafer; a kind of electronic device with high-pressure air-conditioning system
A first LED disposed on the first insulating layer corresponding to the first photodetector,
wherein the first insulating layer is connected to the second insulating layer; the first shape of the first photodetector is the same as the second shape of the second photodetector.
2. The optocoupler package of claim 1, wherein each of the two or more optocouplers further comprises:
the second light emitting diode is disposed on the second insulating layer corresponding to the second light detector.
3. The optocoupler package of claim 2 wherein the first insulating layer is a light transmissive insulating layer; the second insulating layer is a light-transmitting insulating layer.
4. The optocoupler package of claim 3, further comprising:
two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
5. The optocoupler package of claim 2, wherein the first insulating layer comprises:
the first light-transmitting insulating layer is arranged on the first light detector and the wafer, and the first light-emitting diode is arranged on the first light-transmitting insulating layer corresponding to the first light detector; a kind of electronic device with high-pressure air-conditioning system
The first light shielding insulating layer is arranged on the first light detector and the wafer, and surrounds the first light transmitting insulating layer.
6. The optocoupler package of claim 5, wherein the second insulating layer comprises:
the second light-transmitting insulating layer is arranged on the second light detector and the wafer, and the second light-emitting diode is arranged on the second light-transmitting insulating layer corresponding to the second light detector; a kind of electronic device with high-pressure air-conditioning system
A second light shielding insulating layer disposed on the second photodetector and the wafer, the second light shielding insulating layer surrounding the second light transmitting insulating layer,
wherein the first light shielding insulating layer is connected to the second light shielding insulating layer.
7. The optocoupler package of claim 6, further comprising:
two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
8. The optocoupler package of claim 2, wherein the first insulating layer comprises:
a first light shielding insulating layer disposed on the first photodetector and the wafer; a kind of electronic device with high-pressure air-conditioning system
The first light-transmitting insulating layer is arranged on the first light detector, the wafer and the first shading insulating layer, and the first light-emitting diode is arranged on the first light-transmitting insulating layer corresponding to the first light detector.
9. The optocoupler package of claim 8, wherein the second insulating layer comprises:
a second light shielding insulating layer disposed on the second photodetector and the wafer; a kind of electronic device with high-pressure air-conditioning system
A second light-transmitting insulating layer disposed on the second photodetector, the wafer and the second light-shielding insulating layer, the second LED being disposed on the second light-transmitting insulating layer corresponding to the second photodetector,
wherein the first light shielding insulating layer is connected to the second light shielding insulating layer; the first light-transmitting insulating layer is connected to the second light-transmitting insulating layer.
10. The optocoupler package of claim 9, further comprising:
two or more bond pads formed on the wafer and electrically connected to the two or more optocouplers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320205341.7U CN219106160U (en) | 2023-02-10 | 2023-02-10 | Optocoupler package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320205341.7U CN219106160U (en) | 2023-02-10 | 2023-02-10 | Optocoupler package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219106160U true CN219106160U (en) | 2023-05-30 |
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ID=86463579
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320205341.7U Active CN219106160U (en) | 2023-02-10 | 2023-02-10 | Optocoupler package structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN219106160U (en) |
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