CN219010442U - Magnetron sputtering electrode and magnetron sputtering device - Google Patents

Abstract

The utility model discloses a magnetron sputtering electrode and a magnetron sputtering device. The magnetron sputtering electrode includes: the device comprises a magnet assembly, a target material and a first magnetic field adjusting device; the magnet assembly moves back and forth along the first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone; the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth; the front projection of the first magnetic field adjusting device on the plane of the target overlaps with the front projection of the magnet assembly on the plane of the target when the magnet assembly moves to the turning region; the first magnetic field adjusting device is used for weakening the magnetic field generated by the movement of the magnet assembly to the foldback area. In this application, the existence of first magnetic field adjusting device can reduce the magnetic flux that magnet subassembly acted on the target in the area of turning back, reduces the consumption speed of magnet subassembly in the area of turning back target, guarantees the whole sputtering homogeneity of target, effectively promotes target utilization ratio.

Description

Magnetron sputtering electrode and magnetron sputtering device

Technical Field

The embodiment of the utility model relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering electrode and a magnetron sputtering device.

Background

The magnetron sputtering coating film is widely applied to the production of semiconductors, flat panel displays, solar panels and the like. The principle of magnetron sputtering coating is to inject a gas into a vacuum chamber and ionize the gas with an electric field to generate plasma, and after the ionized gas particles collide with a target material to be deposited, deposit the particles sputtered by the collision on a substrate.

Because the magnetron sputtering electrode performs high-speed sputtering under low air pressure, the ionization rate of hydrogen and other low-pressure inert gases of argon must be effectively improved to ensure the quality of the test-jet plating film, the sputtering electrode introduces a magnetic field, and the plasma density is improved by utilizing the constraint of the magnetic field on electrons so as to increase the test-jet rate. In the prior art, a magnet unit is generally arranged on the back side of the target, and a magnetic field formed by the magnet unit and an electric field in the vacuum cavity act together to enable the plasma to sputter the target. However, after the magnetic field is introduced in the prior art, the problem of different consumption speeds of different areas of the target exists, so that the utilization rate of the target is low.

Disclosure of Invention

In view of this, the present utility model provides a magnetron sputtering electrode and a magnetron sputtering device, so as to improve the uniformity of the consumption speed of different areas of the target and the utilization rate of the target.

In a first aspect, an embodiment of the present utility model provides a magnetron sputtering electrode, including a magnet assembly, a target, and a first magnetic field adjustment device;

the magnet assembly moves back and forth along a first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone;

the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth;

the orthographic projection of the first magnetic field adjusting device on the plane of the target overlaps with the orthographic projection of the magnet assembly on the plane of the target when the magnet assembly moves to the foldback area; the magnet assembly and the first magnetic field adjusting device extend along a second direction, and the extension length of the first magnetic field adjusting device is larger than or equal to that of the magnet assembly; the first magnetic field adjusting device is used for weakening the magnetic field generated by the movement of the magnet assembly to the foldback area;

wherein the first direction intersects the second direction.

In a second aspect, an embodiment of the present utility model further provides a magnetron sputtering device, including the magnetron sputtering electrode according to the first aspect of the present utility model.

According to the technical scheme, a magnet assembly, a target material and a first magnetic field adjusting device are arranged in a magnetron sputtering electrode; the magnet assembly moves back and forth along the first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone; the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth; the front projection of the first magnetic field adjusting device on the plane of the target overlaps with the front projection of the magnet assembly on the plane of the target when moving to the foldback area, and the first magnetic field adjusting device is used for weakening the magnetic field generated when the magnet assembly moves to the foldback area. By adopting the scheme, the magnetic flux of the magnet assembly acting on the target in the turning-back area can be reduced by the first magnetic field adjusting device, the consumption speed of the target when the magnet assembly is positioned in the turning-back area is reduced, the overall sputtering uniformity of the target is ensured, and the utilization rate of the target is effectively improved. In addition, the magnet assembly and the first magnetic field adjusting device are both arranged to extend along the second direction, and the extension length of the first magnetic field adjusting device is greater than or equal to that of the magnet assembly. Therefore, when the magnet assembly is in the turning-back area, the first magnetic field adjusting device can adjust the magnetic field of the whole target acted by the magnet assembly, the uniformity of the magnetic field weakening effect of the first magnetic field adjusting device is improved, and the consumption uniformity of the target is further improved.

Drawings

FIG. 1 is a schematic diagram of a magnetron sputtering electrode in the related art;

FIG. 2 is a front view of a magnetron sputtering electrode according to an embodiment of the utility model;

FIG. 3 is a side view of the magnetron sputtering electrode shown in FIG. 2;

FIG. 4 is a top view of the magnetron sputtering electrode shown in FIG. 2;

FIG. 5 is a front view of another magnetron sputtering electrode according to an embodiment of the utility model;

FIG. 6 is a side view of a magnetron sputtering electrode according to an embodiment of the utility model;

fig. 7 is a top view of a magnet assembly according to an embodiment of the present utility model;

fig. 8 is a schematic top view of a first magnet adjusting device according to an embodiment of the present utility model;

FIG. 9 is a schematic cross-sectional view of a first magnetic field adjusting device according to an embodiment of the present utility model;

FIG. 10 is a front view of yet another magnetron sputtering electrode according to an embodiment of the utility model;

FIG. 11 is a top view of the magnetron sputtering electrode shown in FIG. 10;

fig. 12 is a front view of a magnet assembly according to an embodiment of the present utility model;

fig. 13 is a schematic structural diagram of a magnetron sputtering device according to an embodiment of the utility model.

Detailed Description

The utility model is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present utility model are shown in the drawings.

Fig. 1 is a schematic structural diagram of a magnetron sputtering electrode in the related art, as shown in fig. 1, the magnetron sputtering electrode includes a target 3' fixed on a backing plate 7', a magnet unit 2' is disposed on one side of the backing plate 7' away from the target 3', the magnet unit 2' forms magnetic flux near the target 3', and the magnetic flux and an electric field in a vacuum chamber cooperate to enable plasma to bombard a sputtering surface of the target 3' so as to form a film on a substrate (not shown in the figure) to be processed, so that sputtering of the target 3' occurs. Neutral target atoms or molecules in the sputtering particles are deposited on the substrate to be treated to finish the film coating of the substrate to be treated.

In the related art, the magnet unit 2' is connected to the driving unit 5', and the driving unit 5' drives the magnet unit 2' to reciprocate in the horizontal direction to uniformly sputter different regions of the target 3 '. However, it has been found that the magnet unit 2' has a process of acceleration and deceleration when the two folding ends a ' are folded back during the reciprocating movement, and the average speed of the movement of the magnet unit 2' in the region is small. In this region, the magnet unit 2 'stays longer per unit area of the target 3' than in other regions, that is, sputtering time per unit area of the target 3 'is longer at the position of the folded-back end a' than in other regions. The target consumption is the product of the sputtering rate and the sputtering time per unit area of the target, so that the sputtering time per unit area affects the target consumption, and the erosion rate of the target 3 'of the area corresponding to the folded end A' of the magnet unit 2 'is higher than that of other areas, so that the consumption rate of the target 3' on two sides (the area indicated by a dotted line box in the figure) in the horizontal direction is higher, and the consumption rate of the middle area is lower. It will be appreciated that when the regions on either side of the target 3 'are depleted, the target 3' cannot be used any further. According to the actual sputtering condition, the utilization rate of the target 3' in the magnetron sputtering electrode is only 25-35%, so that the improvement of the target utilization rate is limited.

In other related art, there is a scheme for reducing the consumption rate of both ends by increasing the thickness of both sides of the target in the horizontal direction. However, this approach increases the cost of the target and also causes abnormal glow discharge (Arcing) due to excessively uneven thickness at both sides and the middle of the target, resulting in reduced film formation uniformity.

Based on the above-mentioned drawbacks of the related art, the present application provides a magnetron sputtering electrode, including a magnet assembly, a target, and a first magnetic field adjustment device;

the magnet assembly moves back and forth along the first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone;

the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth;

the front projection of the first magnetic field adjusting device on the plane of the target overlaps with the front projection of the magnet assembly on the plane of the target when the magnet assembly moves to the turning region; the magnet assembly and the first magnetic field adjusting device extend along the second direction, and the extension length of the first magnetic field adjusting device is greater than or equal to that of the magnet assembly; the first magnetic field adjusting device is used for weakening the magnetic field generated when the magnet assembly moves to the foldback area; wherein the first direction intersects the second direction.

Through the scheme, the magnetic flux of the magnet assembly acting on the target in the turning-back area can be reduced by the first magnetic field adjusting device, the consumption speed of the target when the magnet assembly is positioned in the turning-back area is reduced, the overall sputtering uniformity of the target is ensured, and the target utilization rate is effectively improved. Meanwhile, uniformity of the magnetic field weakening effect of the first magnetic field adjusting device can be guaranteed, and target consumption uniformity is further improved.

The foregoing is the core idea of the present utility model, and the technical solutions in the novel embodiment of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the novel embodiment of the present utility model. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without making creative efforts are within the scope of the present application.

Fig. 2 is a front view of a magnetron sputtering electrode according to an embodiment of the utility model, fig. 3 is a side view of the magnetron sputtering electrode shown in fig. 2, and fig. 4 is a top view of the magnetron sputtering electrode shown in fig. 2. Referring to fig. 2 to 4, the magnetron sputtering electrode 1 includes: a magnet assembly 2, a target 3 and a first magnetic field adjusting device 4; the magnet assembly 2 moves back and forth along a first direction X, the back and forth movement track comprises a folding zone A and an intermediate zone B, and the movement speed of the magnet assembly 2 in the folding zone A is smaller than that of the magnet assembly 2 in the intermediate zone B; the target 3 is positioned in a magnetic field formed when the magnet assembly 2 moves back and forth; the orthographic projection of the first magnetic field adjusting device 4 on the plane of the target 3 overlaps with the orthographic projection of the magnet assembly 2 on the plane of the target 3 when the magnet assembly moves to the foldback area A; the magnet assembly 2 and the first magnetic field adjusting device 4 extend along the second direction Y, and the extension length L1 of the first magnetic field adjusting device 4 is greater than or equal to the extension length L2 of the magnet assembly 2; the first magnetic field adjusting device 4 is used for weakening the magnetic field generated when the magnet assembly 2 moves to the turning-back area A; wherein the first direction X intersects the second direction Y.

Specifically, as shown in fig. 2, a target 3 and a magnet assembly 2 located on one side of the target 3 are provided in the magnetron sputtering electrode 1. The magnet assembly 2 is used to generate a magnetic field (also known as a magnetic flux) so that the plasma bombards the target 3 under the influence of the electric field and the magnetic field. In fig. 2, the magnetic field (i.e., induction lines) generated by the magnet assembly 2 is shown by an arc, and fig. 2 shows only one induction line by way of example, which does not represent the actual situation. The magnet assembly 2 is not shown in the plan view shown in fig. 4.

The shape of the target 3 is not limited in the embodiment of the present utility model, but it is understood that the target 3 has a certain extension length in different directions in space, and the target 3 is exemplarily shown as a planar target in the figure, and the extension direction of the target 3 intersects with the movement direction of the magnet assembly 2, so the practical arrangement mode is not limited thereto. The target 3 may be made of metal materials such as aluminum, copper, iron, titanium, nickel, magnesium, zinc, silver, cobalt, etc., binary alloy materials such as nickel-metal, nickel-iron, nickel-cobalt, nickel-bright, nickel-aluminum, nickel-copper, etc., or multi-element alloy materials such as cobalt-iron, copper-steel, etc., or ceramic materials, without limitation.

In this application, in order to ensure that a magnetic field generated by the reciprocating motion track of the magnet assembly 2 acts on the target 3, the orthographic projection of the reciprocating motion track of the magnet assembly 2 on the surface of the target 3 may be overlapped with the target 3, and the surface of the target 3 is parallel to the plane where the target 3 is located. Meanwhile, the magnet assembly 2 is further arranged to extend along the direction intersecting with the reciprocating motion of the magnet assembly, so that the magnetic field generated by the magnet assembly 2 can cover the whole target 3, and the magnetic field can be formed in different areas of the target 3 in the reciprocating motion process of the magnet assembly 2. For example, the magnet assembly 2 shown in fig. 2 moves back and forth along the first direction X, and the magnet assembly 2 may be disposed to extend along the second direction Y perpendicular to the first direction X, and the practical arrangement is not limited thereto. The arrangement of the magnet assembly 2 can be adjusted by a person skilled in the art according to the shape of the target 3.

The magnet assembly 2 can reciprocate under the driving of the driving assembly 5, and the driving assembly 5 can adopt any structure known to those skilled in the art, which is not described herein in detail. The reciprocating movement means that the magnet assembly 2 moves from the turn-back area a at the start end to the turn-back area a at the other end in the first direction X, and then returns to the turn-back area a at the start end in the reverse direction of the first direction X. The left solid line magnet assembly 2 shown in fig. 2 is the actual position of the current magnet assembly 2 in the left turn-around area a, and the right broken line magnet assembly 2 is the position where the magnet assembly 2 moves to the other side turn-around area a.

Further, with continued reference to fig. 2 to 4, the turning-back area a of the magnet assembly 2 may be a certain area range corresponding to the turning-back end mentioned in the related art, and the middle area B may be other areas except for the turning-back area a in the reciprocating track of the target 3. When the magnet assembly 2 moves back and forth along the same straight line direction, the two ends of the middle area B are the turning-back areas A. From the above, since the magnet assembly 2 needs to change the moving direction in the folding zone a, there is a deceleration process, so the moving speed of the magnet assembly 2 in the folding zone a is smaller than the folding speed in the middle zone B. It is understood that the movement speed referred to herein refers to the average movement speed in the corresponding region.

The portion of the target 3 located in the magnetic field generated when the magnet assembly 2 moves to the folding area a may be defined as a middle first area C of the target 3, and the portion of the target 3 located in the magnetic field generated when the magnet assembly 2 moves to the middle area B may be defined as a second area D of the target 3. The length of the magnet reciprocating motion track belonging to the middle zone B can be larger than the length of the magnet reciprocating motion track belonging to the turning-back zone A. The length of the second region D of the target 3 may be greater than the length of the first region C in the direction of the back and forth movement of the magnet assembly 2 (first direction X shown in the figure).

It should be noted that, with continued reference to fig. 2 to fig. 4, in order to avoid the problem that the target 3 consumes faster due to the longer residence time of the magnet assembly 2 in the turn-back area a, in the present application, the first magnetic field adjusting device 4 is newly added to the magnetron sputtering electrode 1. When the magnet assembly 2 is located in the fold-back area a, the orthographic projection of the first magnetic field adjusting device 4 on the plane of the target 3 overlaps with the orthographic projection of the magnet assembly 2 on the plane of the target 3. The first magnetic field adjusting device 4 is used for weakening the magnetic field generated when the magnet assembly 2 is located in the turn-back area a, so that the magnetic field intensity of the magnet assembly 2 acting on the first area C of the target 3 is weakened, the magnetic flux at the first area C is reduced, the plasma concentration at the first area C is reduced, and the sputtering efficiency of the first area C of the target 3 is further reduced.

In fig. 2 and 3, it is exemplarily shown that the first magnetic field adjusting device 4 may be disposed between the target 3 and the magnet assembly 2, and the actual disposition manner is not limited thereto, and the first magnetic field adjusting device 4 may also be disposed on a side of the target 3 away from the magnet assembly 2, so as to ensure that the first magnetic field adjusting device 4 can weaken the magnetic field of the magnet assembly 2 acting on the target 3.

In addition, as shown in fig. 3, the first magnetic field adjusting device 4 is further disposed to extend along the second direction Y, and the extension length L1 of the first magnetic field adjusting device 4 is greater than or equal to the extension length L2 of the magnet assembly 2, which is also understood that, along the second direction Y, the projection length L1 of the first magnetic field adjusting device 4 on the surface of the target 3 is greater than or equal to the projection length L2 of the magnet assembly 2 on the surface of the target 3. Therefore, the orthographic projection of the first magnetic field adjusting device 4 on the plane where the target 3 is located can cover the first area C of the target 3, so that the first magnetic field adjusting device 4 can interfere the magnetic field generated by the whole magnet assembly 2 when the magnet assembly 2 is in the turning-back area a, and the magnetic field weakening uniformity of the first magnetic field adjusting device 4 on the first area C is improved.

Alternatively, the specific arrangement of the first magnetic field adjusting device 4 is not limited, and those skilled in the art may perform the arrangement according to the actual situation. Illustratively, in a possible embodiment, the first magnetic field adjusting device 4 may be made of a demagnetizing material or a magnetic shielding material, which may affect the arrangement of the magnetic induction lines (e.g. change direction and/or reduce density, etc.), so that the presence of the first magnetic field adjusting device 4 may reduce the magnetic flux of the magnet assembly 2 in the first region C, and the effect of weakening the magnetic field strength of the magnet assembly 2 when located in the turn-back region a is achieved. For example, in other possible embodiments, the first magnetic field adjusting device 4 may also be made of a magnetic material, so that the first magnetic field adjusting device 4 can generate a magnetic field opposite to the magnetic field generated by the magnet assembly 2, so as to reduce the magnetic flux of the magnet assembly 2 in the first area C. It should be noted that, when the first magnetic field adjusting device 4 is made of a magnetic material, the magnetic field intensity generated by the first magnetic field adjusting device 4 may be smaller than the magnetic field intensity generated by the magnet assembly 2, and the first magnetic field adjusting device 4 may be configured to generate only a magnetic field toward the magnet assembly 2, so as to avoid the magnetic field generated by the first magnetic field adjusting device 4 affecting the target 3 when the magnet assembly 2 is located in the middle area B. Of course, the arrangement of the first magnetic field adjusting device 4 is merely an example, and the actual situation is not limited thereto.

It will be appreciated by those skilled in the art that the consumption of the target 3 is related to the actual sputtering situation (e.g., the shape and thickness of the target 3, the specification of the magnet assembly 2, the magnitude of the electric field in the vacuum sputtering chamber, etc.), and the embodiment of the present utility model does not limit the degree of weakening of the magnetic field formed by the magnet assembly 2 by the first magnetic field adjusting device 4. In the practical application process, a person skilled in the art can adjust the magnetic field weakening effect of the first magnetic field adjusting device 4 according to the practical requirement, and can control the consumption speed of the two ends of the target material 3 to be similar to or the same as the consumption speed of the middle area B.

According to the technical scheme, a magnet assembly, a target material and a first magnetic field adjusting device are arranged in a magnetron sputtering electrode; the magnet assembly moves back and forth along the first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone; the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth; the front projection of the first magnetic field adjusting device on the plane of the target overlaps with the front projection of the magnet assembly on the plane of the target when moving to the foldback area, and the first magnetic field adjusting device is used for weakening the magnetic field generated when the magnet assembly moves to the foldback area. By adopting the scheme, the magnetic flux of the magnet assembly acting on the target in the turning-back area can be reduced by the first magnetic field adjusting device, the consumption speed of the target when the magnet assembly is positioned in the turning-back area is reduced, the overall sputtering uniformity of the target is ensured, and the utilization rate of the target is effectively improved. In addition, the magnet assembly and the first magnetic field adjusting device are both arranged to extend along the second direction, and the extension length of the first magnetic field adjusting device is greater than or equal to that of the magnet assembly. Therefore, when the magnet assembly is in the turning-back area, the first magnetic field adjusting device can adjust the magnetic field of the whole target acted by the magnet assembly, the uniformity of the magnetic field weakening effect of the first magnetic field adjusting device is improved, and the consumption uniformity of the target is further improved.

Alternatively, with continued reference to fig. 2 and 4, in a possible embodiment, the first direction X is parallel to the plane of the target 3; orthographic projections of the first magnetic field adjusting device 4 on the plane of the target 3 are positioned at two ends of the target 3 in the first direction X.

Specifically, in the present embodiment, the target 3 may be a planar target, and the target 3 may extend in the first direction X and the second direction Y. Therefore, the magnet assembly 2 can do reciprocating motion in the direction parallel to the surface of the target material 3, and the magnetic field formed by the magnet assembly 2 can uniformly act on the target material 3, so that the uniform consumption of the target material 3 is ensured. The figure exemplarily shows that the length of the target 3 in the second direction Y is longer than the length in the first direction X, and the actual arrangement is not limited thereto.

In this arrangement, the projections of the turn-back area a on the surface of the target 3 are located at two sides of the target 3 along the first direction X, and the orthographic projections of the first magnetic field adjusting device 4 on the surface of the target 3 are located at two ends of the target 3 along the first direction X, where the two ends of the target 3 along the first direction X are the first areas C of the target 3. That is, the number of the first magnetic field adjusting devices 4 may be set to 2, and the two first magnetic field adjusting devices 4 are respectively disposed at two sides of the target 3 along the first direction X.

Alternatively, in the embodiment shown in fig. 2, the folding-back stop position of the magnet assembly 2 in the folding-back area a includes one, that is, the magnet assembly 2 folds back at the same folding-back point A1 of the folding-back area a during the round trip operation, which is not limited in practice. Fig. 5 is a front view of another magnetron sputtering electrode according to an embodiment of the utility model, and referring to fig. 5, in other possible embodiments, the magnet assembly 2 may be folded back at different folding points of the folding zone a. For example, as shown in fig. 5, the magnet assembly 2 indicated by the left solid line is an initial point A2 in the left folding zone a of the magnet assembly 2 in the first round trip track, and the magnet assembly 2 moves rightward from the initial point A2; until reaching a turning point A5 in the turning area A on the right side, and then changing the direction to return to the left side; after reaching the left side, the device can stop at the left turning point A4 and change the direction to return to the right side until the right turning point A3 returns again, and the device can do reciprocating motion according to the rule. In this arrangement, the magnet assembly 2 is folded back at a plurality of non-overlapping positions, and the magnetic induction lines are distributed uniformly in the first region C, which is also beneficial to uniform consumption of the first region C of the target 3.

It will be appreciated that in other alternative examples, the magnet assembly 2 identified by the left solid line is an initial point A2 of the first round trip trajectory where the magnet assembly 2 is within the left turn-around area a, from which initial point A2 the magnet assembly 2 moves to the right; until reaching a turning point A3 in the turning area A on the right side, and then changing the direction to return to the left side; after reaching the left side, the device can stop at the left turning point A4 and change the direction to return to the right side until the right turning point A5 returns again, and the device can do reciprocating motion according to the rule. In this arrangement, the magnet assembly 2 is folded back at a plurality of non-overlapping positions, and the magnetic induction lines are distributed uniformly in the first region C, which is also beneficial to uniform consumption of the first region C of the target 3.

Alternatively, fig. 6 is a side view of a magnetron sputtering electrode according to an embodiment of the utility model, and fig. 7 is a top view of a magnet assembly according to an embodiment of the utility model. Referring to fig. 6 and 7, in a possible embodiment, the magnet assembly 2 comprises a first pole 21, the first pole 21 extending along a second direction Y; the first magnetic pole 21 comprises two magnetic pole end points 22, and the magnetic pole end points 22 are positioned at two ends of the first magnetic pole 21 along the second direction Y; the field weakening effect of the portion of the first magnetic field adjusting means 4 closer to the pole end point 22 is stronger than the field weakening effect of the portion of the first magnetic field adjusting means 4 farther from the pole end point 22.

As shown in fig. 6 and 7, the magnet assembly 2 includes a first magnetic pole 21, the first magnetic pole 21 extending in the second direction Y, the first magnetic pole 21 being an N (or S) pole. The extending direction of the first magnetic pole 21 is the extending direction of the magnet assembly 2. Along the extension direction of the first magnetic pole 21, the first magnetic pole 21 includes two magnetic pole end points 22 at both ends. Fig. 7 illustrates a magnetic induction line distribution of a partial region of the first magnetic pole 21, and it is known from the magnetic induction line distribution that the magnetic induction line density at the magnetic pole end points 22 is generally greater than the magnetic induction line density in the middle of the first magnetic pole 21, that is, the magnetic field strength formed at the magnetic pole end points 22 is stronger, and the magnetic field strength formed at the portions between the magnetic pole end points 22 is weaker. When the magnet assembly 2 moves to the turn-back area a, it can be defined that the magnetic induction line formed by the first magnetic pole 21 acts on the region of the target 3 (i.e. the first region C), the magnetic induction line generated by the magnetic pole end point 22 acts on the first sub-region C1 of the target 3, and the magnetic field generated in the middle of the first magnetic pole 21 acts on the second sub-region C2 of the target 3. The first subarea C1 is positioned at two ends of the second subarea C2 along the second direction Y, and the first subarea C1 corresponds to the positions of four end points of the corners of the target 3.

It should be noted that, for the above-mentioned situations, in the embodiment of the present application, the first magnetic field adjusting device 4 may be further configured to have different weakening effects on the magnetic fields generated by different areas of the magnet assembly 2. Specifically, in the first magnetic field adjusting device 4, a portion closer to the magnetic pole end point 22 is defined as a first portion 41, and a portion farther from the magnetic pole end point 22 is defined as a second portion 42. It will also be appreciated that the distance between the orthographic projection of the first subsection 41 on the plane of the target 3 and the orthographic projection of the magnetic pole terminal 22 on the plane of the target 3 is smaller than the distance between the orthographic projection of the second subsection 42 on the plane of the target 3 and the orthographic projection of the magnetic pole terminal 22 on the plane of the target 3. For example, as shown in fig. 6, the front projection of the first subsection 41 on the plane of the target 3 overlaps with the front projection of the magnetic pole end point 22 on the plane of the target 3, and the first subsection 41 may be located at two ends of the second subsection 42 along the second direction Y. As such, the orthographic projection of the first subsection 41 on the surface of the target 3 may overlap with the first sub-region C1 of the target 3.

Further, in this embodiment, the weakening effect of the first subsection 41 on the magnetic field of the magnet assembly 2 acting on the target 3 may be set to be stronger than the weakening effect of the second subsection 42 on the magnetic field of the magnet assembly 2 acting on the target 3. In this arrangement, the magnetic field strength of the first sub-region C1 acting on the target 3 is similar to or the same as the magnetic field strength of the second sub-region C2 acting on the target 3, so as to further ensure the uniformity of consumption of the first region C of the target 3 in the sputtering process.

In this case, when the magnet assembly 2 is folded back at a plurality of non-overlapping positions, there is also a difference in consumption of the first and second sub-regions C1 and C2. In the practical application process, the specific shape, size and/or material of the first subsection 41 and the second subsection 42 of the first magnetic field adjusting device 4 can be adjusted according to the practical recessing situation of the first subregion C1 and the second subregion C2, so that the uniform consumption of the first region C is ensured, which is not described in one-to-one manner in this embodiment.

Note that the above-described magnetic pole end points 22 do not refer to only two points on both sides of the first magnetic pole 21 in the second direction Y, but are portions extending a certain length toward the middle of the first magnetic pole 21 along the two points on both sides of the first magnetic pole 21. I.e. the pole end point 22 may refer to a region of a certain length of the first pole 21. The division of the pole end points 22 is related to the line distribution of the magnetic induction of the first magnetic pole 21 in the second direction Y. The specific value of the pole end point 22 occupying the whole length of the first magnetic pole 21 is not limited in this embodiment due to different actual sputtering conditions. For example, in the second direction Y, the pole end point 22 may refer to a region where one end of the first pole 21 extends one tenth of the length of the first pole 21 toward the middle, but is not limited thereto.

Accordingly, the size of the first division 41 of the first magnetic field adjusting device 4 is not limited in the embodiments of the present application, and the division of the first division 41 is related to the division of the magnetic pole end points 22. The first subsection 41 is guaranteed to have a strong magnetic field weakening effect on the magnetic pole end point 22 acting on the first sub-region C1 of the target 3. For example, in the second direction Y, the first subsection 41 may refer to a region where one end of the first magnetic field adjustment device 4 extends one tenth of the length of the first magnetic field adjustment device 4 toward the middle, but is not limited thereto.

The first magnetic field adjusting device 4 may be an integral structure or a split structure, which is not limited in the embodiment of the present utility model. The first magnetic field adjusting device 4 located on the side of the target 3 along the first direction X shown in fig. 6 is an integral structure, and the first and second sections 41 and 42 are connected to each other, and the actual arrangement is not limited thereto. In this arrangement, the thickness of the first section 41 can be increased appropriately, and the thickness of the second section 42 can be reduced.

For example, fig. 8 is a schematic top view of a first magnetic field adjusting device according to an embodiment of the present utility model, as shown in fig. 8, the first magnetic field adjusting device 4 may be a split structure, and the first partition 41 and the second partition 42 may be separate structures. The field weakening effect of the first and second sections 41, 42 is adjusted by adjusting the relative thickness of the first and second sections 41, 42, or the material from which the first and second sections 41, 42 are made, etc. The first magnetic field adjusting device 4 is arranged to be of a split structure, so that the first magnetic field adjusting device 4 can be detached and replaced conveniently.

Alternatively, and still referring to fig. 8, the first magnetic field adjusting means 4 may comprise a degaussing sheet having a thickness closer to the pole end point 22 that is greater than the thickness of the degaussing sheet farther from the pole end point 22.

Specifically, the first magnetic field adjusting device 4 shown in fig. 8 may include a plurality of demagnetizing sheets, that is, the first and second sections 41 and 42 respectively correspond to the demagnetizing sheets independent of each other. And the thickness of the degaussing sheet closer to the pole end point 22 is set to be greater than that of the degaussing sheet farther from the pole end point 22. In other words, the thickness of the demagnetizing sheets of the first subsection 41 is greater than the thickness of the demagnetizing sheets of the second subsection 42.

Alternatively, in other possible embodiments, the first magnetic field adjusting device 4 may include a magnetic separator sheet, and the thickness of the magnetic separator sheet closer to the magnetic pole end point 22 is greater than the thickness of the magnetic separator sheet farther from the magnetic pole end point 22.

Specifically, the first magnetic field adjusting device 4 may include a plurality of magnetic shielding pieces, that is, the first subsection 41 and the second subsection 42 respectively correspond to the magnetic shielding pieces that are independent of each other. And the thickness of the magnetic shield sheet closer to the magnetic pole end point 22 is set to be larger than that of the magnetic shield sheet farther from the magnetic pole end point 22. In other words, the thickness of the magnetic barrier sheet of the first subsection 41 is greater than the thickness of the magnetic barrier sheet of the second subsection 42.

Optionally, parameters such as shape or thickness of the first magnetic field adjusting device 4 are not limited, and those skilled in the art can design the magnetic field adjusting device according to practical requirements. Taking the example in which the first magnetic field adjusting device 4 includes a plurality of demagnetizing sheets, the top view structure of the demagnetizing sheets may be circular, square, triangular, irregular, or the like, and the top view shape of the demagnetizing sheets of the first section 41 shown in fig. 8 is circular, and the top view shape of the demagnetizing sheets of the second section 42 is rectangular, and the practical arrangement is not limited thereto. In practical application, the shape of the demagnetizing piece can be set according to the shape of the first region C of the target material 3 in the sputtering process, so that the demagnetizing piece is more matched with the shape of the first region C, and the uniformity of magnetic flux of the first region C is ensured.

In addition, referring to the consumption situation of the prior art target shown in fig. 1, the side surfaces of the concave parts which consume more quickly at both sides of the target are in smooth W shape, and it can be understood that the consumption situations of different positions in the first region C of the target 3 are different. Therefore, in this embodiment, the overall shape of the first magnetic field adjusting device 4 may be adjusted according to the concave shape of the target 3, so that the projection shape of the first magnetic field adjusting device 4 on the plane perpendicular to the sputtering surface of the target 3 is complementary to the thickness of the concave shape of the target 3, for example, the projection of the first magnetic field adjusting device 4 on the plane perpendicular to the sputtering surface of the target 3 may be provided in an M shape with smooth side walls, so that the consumption speed of the first region C of the target 3 tends to be uniform. Fig. 9 is a schematic cross-sectional structure of several first magnetic field adjusting devices according to an embodiment of the present utility model, as shown in fig. 9, the cross-sectional shape of the first magnetic field adjusting device 4 on the sputtering surface of the vertical target 3 may be set to be an "M" shape, a triangle shape, a rectangle shape, a trapezoid shape or other irregular polygons according to the actual consumption situation of the target 3, but is not limited thereto.

Optionally, fig. 10 is a front view of another magnetron sputtering electrode according to an embodiment of the utility model, fig. 11 is a top view of the magnetron sputtering electrode shown in fig. 10, and referring to fig. 10 and 11, in a possible embodiment, the magnetron sputtering electrode 1 may further include a second magnetic field adjustment device 6, where the second magnetic field adjustment device 6 extends along a first direction X; the orthographic projection of the second magnetic field adjusting device 6 on the plane of the target 3 overlaps with the orthographic projection of the magnetic pole end point 22 on the plane of the target 3 when the magnet assembly 2 moves to the middle area B; the second magnetic field adjusting device 6 is used for weakening the magnetic field generated by the magnetic pole end point 22 when the magnet assembly 2 moves to the middle zone B; wherein the field weakening effect of the second magnetic field adjusting means 6 is weaker than the field weakening effect of the first magnetic field adjusting means 4.

Specifically, according to the above embodiment, the linear density of magnetic induction at the magnetic pole end points 22 in the magnet assembly 2 is relatively high, and when the magnet assembly 2 moves to the middle region B, the consumption speed of the region of the target 3 corresponding to the magnetic pole end points 22 is slightly higher than the consumption speed of the central region of the target 3 along the direction in which the magnet assembly 2 is vertically directed to the target 3. It is also understood that the second region D of the target 3 includes a third sub-region D1 located in the magnetic field generated by the magnetic pole end point 22 and a fourth sub-region D2 located between the first region C and the third sub-region D1, the fourth sub-region D2 being a central region of the target 3, and the consumption rate of the third sub-region D1 being greater than the consumption rate of the fourth sub-region D2. Therefore, in the embodiment of the present application, the second magnetic field adjusting device 6 may be further disposed in the magnetron sputtering electrode 1, where the extending direction of the second magnetic field adjusting device 6 is the same as the reciprocating direction of the magnet assembly 2; and, when the magnet assembly 2 is located in the middle area B, the projection of the magnetic pole end point 22 overlaps with the projection of the second magnetic field adjusting device 6 along the direction in which the magnet assembly 2 is vertically directed toward the target 3. In this way, the orthographic projection of the second magnetic field adjustment device 6 on the plane of the target 3 may overlap the third sub-region D1 of the target 3, and the second magnetic field adjustment device 6 may weaken the magnetic field acting on the third sub-region D1 of the target 3.

In addition, in the whole magnetron sputtering process, the magnetic field intensity acting on the first region C of the target 3 when the magnet assembly 2 moves to the turn-back region a is larger than the magnetic field intensity acting on the second region D of the target 3 when the magnet assembly 2 moves to the intermediate region B. In the turn-back region a, the magnetic field intensity of the magnetic pole end point 22 of the magnet assembly 2 acting on the first sub-region C1 of the target 3 is larger than the magnetic field intensity of the magnetic pole middle acting on the second sub-region C2 of the target 3. Thereby, the magnetic field weakening effect of the first subsection 41 of the first magnetic field adjusting means 4 can be arranged to be larger than the magnetic field weakening effect of the second subsection 42; the field weakening effect of the second subsection 42 of the first magnetic field adjusting means 4 is larger than the field weakening effect of the second magnetic field adjusting means 6. Therefore, the uniformity of the magnetic fields acting on different areas of the target material 3 can be improved, the uniform consumption of the target material 3 is further ensured, and the utilization rate of the target material 3 is improved.

Wherein the field weakening effect can be adjusted by adjusting the preparation material, thickness or shape of the second magnetic field adjusting means 6. For example, the second magnetic field adjusting means 6 may be provided as a demagnetizing sheet, and the thickness of the demagnetizing sheet forming the second magnetic field adjusting means 6 may be smaller than that of the demagnetizing sheet forming the first magnetic field adjusting means 4, but is not limited thereto. Reference may be made to the above embodiments for specific adjustment, and details are not repeated here.

Alternatively, with continued reference to fig. 7, in a possible embodiment, the magnet assembly 2 may further comprise a second pole 23, the second pole 23 being opposite to the first pole 21; the orthographic projection of the second pole 23 onto the plane of the target 3 surrounds the orthographic projection of the first pole 21 onto the plane of the target 3.

It will be appreciated that at least two poles of opposite polarity are provided in the magnet assembly 2 to generate the magnetic field. Specifically, in the present embodiment, the magnet assembly 2 further includes a second magnetic pole 23, and the second magnetic pole 23 may be an S-pole (or an N-pole). A magnetic field acting on the sputtering surface of the target 3 is formed between the first magnetic pole 21 and the second magnetic pole 23.

In this embodiment, as shown in fig. 7, the second magnetic pole 23 may be disposed around the first magnetic pole 21 along a plane parallel to the plane of the target 3, that is, the second magnetic pole 23 is annular, and the first magnetic pole 21 is disposed in the second magnetic pole 23. The plane shown in fig. 6 is parallel to the plane of the target 3. In this arrangement of the magnet assembly 2, the whole magnetic induction line between the magnetic poles can cover the whole sputtering surface of the target 3, which is beneficial to the uniform consumption of the target 3. In this arrangement, when the magnet assembly 2 is located in the turn-back region a, the magnetic induction line between the magnetic pole end 22 of the first magnetic pole 21 and the second magnetic pole 23 can act on the first sub-region C1 of the target 3; when the magnet assembly 2 is located in the intermediate region B, the magnetic induction line between the pole end 22 of the first pole 21 and the second pole 23 can act on the third sub-region D1 of the target 3. Of course, in practical application, the arrangement of the magnet assembly 2 is not limited thereto.

In addition, the magnet assemblies 2 in the above embodiments each include one first magnetic pole 21 and one second magnetic pole 23, and the actual arrangement is not limited thereto. Fig. 12 is a front view of a magnet assembly according to an embodiment of the present utility model, as shown in fig. 12, a plurality of first magnetic poles 21 and a plurality of second magnetic poles 23 may be further disposed in the magnet assembly 2, where the first magnetic poles 21 and the second magnetic poles 23 are in one-to-one correspondence to form a magnet structure 24, and the magnet assembly 2 may be a combination of a plurality of magnet structures 24. Fig. 12 shows two magnet structures 24, which are not limited in practice. Meanwhile, the magnet structures 24 may be disposed to be aligned at certain intervals in the moving direction of the magnet assembly, i.e., in the first direction X. In this arrangement, the uniformity of the magnetic field of the magnet assembly 2 acting on the target 3 is improved, and even consumption of the target 3 is further ensured.

Alternatively, with continued reference to fig. 2-6, 10 or 11, in a possible embodiment, the magnetron sputtering electrode 1 may further comprise a first substrate 7; the target 3 is fixed on one side surface of the first substrate 7; the magnet assembly 2 is positioned on one side of the first substrate 7 facing away from the target 3; the first magnetic field adjusting device 4 is located between the first substrate 7 and the magnet assembly 2.

Specifically, as shown in fig. 2 to 6, 10 or 11, the magnetron sputtering electrode 1 may further be provided with a first substrate 7, and the target 3 may be fixed to one side of the first substrate 7. The first substrate 7 may be a target backing plate, and the target 3 and the first substrate 7 may be connected together by indium, but is not limited thereto. The extending directions of the first substrate 7 and the target 3 may be the same, for example, the first substrate 7 may also extend along the first direction X and the second direction Y. And the size of the first substrate 7 in the first direction X and the second direction Y may be set to be larger than the size of the target 3 in the first direction X and the second direction Y.

Meanwhile, the first magnetic field adjusting device 4 may be disposed on a side of the first substrate 7 away from the target 3, and the magnet assembly 2 is disposed on a side of the first magnetic field adjusting device 4 away from the first substrate 7, that is, along a direction perpendicular to the first substrate 7, where the magnet assembly 2, the first magnetic field adjusting device 4, the first substrate 7 and the target 3 are stacked. In this way, the magnetic field generated by the magnet assembly 2 can act on the sputtering surface of the target 3, and the first magnetic field adjusting device 4 has a better weakening effect on the magnetic field generated by the magnet assembly 2.

Alternatively, with continued reference to fig. 2-6, 10 or 11, in a possible embodiment, the magnetron sputtering electrode 1 may further comprise a second substrate 8; the second substrate 8 is positioned at one side of the first magnetic field adjusting device 4 facing away from the first substrate 7; the first magnetic field adjusting means 4 is fixed between the second substrate 8 and the first substrate 7.

Specifically, as shown in fig. 2 to 6, 10 or 11, a second substrate 8 may be further disposed on a side of the first magnetic field adjusting device 4 facing away from the first substrate 7, and the first magnetic field adjusting device 4 may be fixed between the first substrate 7 and the second substrate 8. The first magnetic field adjusting device 4 is not limited to a specific substrate, how it is fixed to the substrate, and the like, and may be set according to practical requirements. In the preferred embodiment, the first magnetic field adjusting device 4 may be fixed on the second substrate 8, so that the target 3 and the first substrate 7 may be replaced conveniently, but not limited thereto. The second substrate 8 may be a cathode plate, but is not limited thereto.

For example, in a possible embodiment, a detachable fixation between the first magnetic field adjustment means 4 and the second substrate 8 may be provided.

Specifically, as an alternative embodiment, the first magnetic field adjusting device 4 may be fixed on the second substrate 8 by a detachable connection manner such as a threaded connection or a snap connection, so as to facilitate the replacement of the first magnetic field adjusting device and the adjustment of the position, but not limited thereto.

For example, in other possible embodiments, an adhesive fixation between the first magnetic field adjusting device 4 and the second substrate 8 may also be provided.

Specifically, as another alternative embodiment, the first magnetic field adjusting device 4 may be bonded to the second substrate 8 by an adhesive. This has the advantage of being flexible and simple, requiring no additional machining of the second substrate 8, and almost no damage to the second substrate 8. In addition, when the first magnetic field adjusting device 4 needs to be maintained, replaced or adjusted in position, the first magnetic field adjusting device can be removed from the second substrate 8 through the adhesive removing agent, so that the operation is very simple.

The fixing manner of the second magnetic field adjusting device 6 may refer to the fixing manner of the first magnetic field adjusting device 4, for example, the fixing manner may be provided between the first substrate 7 and the second substrate 8, and the second substrate 8 may be bonded and fixed, but is not limited thereto, and will not be described herein.

According to experimental tests, the magnetron sputtering electrode 1 in the application can be utilized to improve the utilization rate of the target 3 to about 45%, so that the cost of the target 3 is reduced to a great extent.

Based on the same conception, the embodiment of the utility model provides a magnetron sputtering device, which comprises the magnetron sputtering electrode provided by any embodiment of the utility model. The magnetron sputtering device provided by the embodiment of the utility model comprises all technical characteristics and corresponding beneficial effects of the magnetron sputtering electrode provided by any embodiment of the utility model, and the description is omitted here.

Optionally, fig. 13 is a schematic structural diagram of a magnetron sputtering device according to an embodiment of the present utility model, and referring to fig. 13, the magnetron sputtering device may further include a vacuum sputtering chamber 9 for providing a vacuum environment; the magnetron sputtering electrode 1 is arranged in a vacuum sputtering chamber 9; a substrate carrying device 10 provided in the vacuum sputtering chamber 9 for carrying the processing substrate 11; a gas introduction means (not shown) for introducing a gas into the vacuum sputtering chamber 9; a sputtering power supply (not shown in the figure) for supplying power to the target 3.

Referring to fig. 13, the magnetron sputtering apparatus provided by the present utility model has a vacuum sputtering chamber 9, and a substrate carrying device 10 is provided in the vacuum sputtering chamber 9, wherein the substrate carrying device 10 includes a carrier for carrying a processing substrate 11. The vacuum sputtering chamber 9 is further provided with a gas introduction device (not shown), and a certain flow rate of a gas such as argon gas can be introduced into the vacuum sputtering chamber 9 by the gas introduction device. The substrate transfer device 10 may be disposed at an upper portion of the vacuum sputtering chamber 9, and the magnetron sputtering electrode 1 may be disposed at a lower portion of the vacuum sputtering chamber 9.

The target 3 in the magnetron sputtering electrode 1 is disposed opposite to the processing substrate 11, and the size of the processing substrate 11 may be smaller than the size of the target 3. In the reciprocating track of the magnet assembly 2 during sputtering of the target 3, the length of the intermediate region B along the first direction X may be the same as the length of the processing substrate 11 along the first direction X. In this arrangement, the second region D of the target 3 is an effective sputtering region, and the sputtered ions from the second region D deposit on the processing substrate 11 to form a film. Since the movement speed of the magnet assembly 2 in the intermediate region B is relatively high and the speed is kept substantially uniform, uniformity of the plating film can be ensured. The first region C of the target 3 is an inactive sputtering region, and ions sputtered from the first region C are hardly deposited on the processing substrate 11.

The first magnetic field adjusting device 4 in the magnetron sputtering electrode 1 can effectively solve the problem that the non-effective sputtering areas at the two ends of the target 3 are consumed too fast, and the utilization rate of the target 3 is improved. According to experimental tests, the magnetron sputtering electrode 1 in the application can be utilized to improve the utilization rate of the target 3 to about 45%, so that the cost of the target 3 is reduced to a great extent.

The magnetron sputtering device provided by the embodiment of the utility model can also comprise any structure known to a person skilled in the art, and the embodiment of the utility model is not repeated and limited.

Note that the above is only a preferred embodiment of the present utility model and the technical principle applied. It will be understood by those skilled in the art that the present utility model is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the utility model. Therefore, while the utility model has been described in connection with the above embodiments, the utility model is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the utility model, which is set forth in the following claims.

Claims (13)

1. The magnetron sputtering electrode is characterized by comprising a magnet assembly, a target material and a first magnetic field adjusting device;

the magnet assembly moves back and forth along a first direction, the back and forth movement track comprises a folding zone and a middle zone, and the movement speed of the magnet assembly in the folding zone is smaller than that of the magnet assembly in the middle zone;

the target material is positioned in a magnetic field formed when the magnet assembly moves back and forth;

the orthographic projection of the first magnetic field adjusting device on the plane of the target overlaps with the orthographic projection of the magnet assembly on the plane of the target when the magnet assembly moves to the foldback area; the magnet assembly and the first magnetic field adjusting device extend along a second direction, and the extension length of the first magnetic field adjusting device is larger than or equal to that of the magnet assembly; the first magnetic field adjusting device is used for weakening the magnetic field generated by the movement of the magnet assembly to the foldback area;

wherein the first direction intersects the second direction.

2. The magnetron sputtering electrode of claim 1, wherein the first direction is parallel to a plane in which the target is located;

Orthographic projection of the first magnetic field adjusting device on a plane where the target is located at two ends of the target in the first direction.

3. The magnetron sputtering electrode of claim 2, wherein the magnet assembly comprises a first pole extending in the second direction;

the first magnetic pole comprises two magnetic pole end points, and the magnetic pole end points are positioned at two ends of the first magnetic pole along the second direction;

the magnetic field weakening effect of the part of the first magnetic field adjusting device, which is closer to the magnetic pole end point, is stronger than the magnetic field weakening effect of the part of the first magnetic field adjusting device, which is farther from the magnetic pole end point.

4. A magnetron sputtering electrode according to claim 3, wherein the first magnetic field adjusting means comprises a degaussing sheet, the thickness of the degaussing sheet nearer the pole end point being greater than the thickness of the degaussing sheet farther from the pole end point.

5. A magnetron sputtering electrode according to claim 3, wherein the first magnetic field adjusting means comprises a magnetism isolating sheet, the thickness of the magnetism isolating sheet nearer to the magnetic pole end point being greater than the thickness of the magnetism isolating sheet farther from the magnetic pole end point.

6. A magnetron sputtering electrode according to claim 3, further comprising a second magnetic field adjustment means extending in the first direction;

the orthographic projection of the second magnetic field adjusting device on the plane of the target overlaps with the orthographic projection of the magnetic pole end point on the plane of the target when the magnet assembly moves to the middle area; the second magnetic field adjusting device is used for weakening the magnetic field generated by the magnetic pole end points when the magnet assembly moves to the middle area;

wherein the magnetic field weakening effect of the second magnetic field adjusting means is weaker than the magnetic field weakening effect of the first magnetic field adjusting means.

7. The magnetron sputtering electrode of claim 3 wherein the magnet assembly further comprises a second magnetic pole having a magnetic opposite polarity to the first magnetic pole; the orthographic projection of the second magnetic pole on the plane of the target surrounds the orthographic projection of the first magnetic pole on the plane of the target.

8. The magnetron sputtering electrode of claim 1, further comprising a first substrate;

the target is fixed on one side surface of the first substrate;

The magnet assembly is positioned on one side of the first substrate, which is away from the target;

the first magnetic field adjusting device is located between the first substrate and the magnet assembly.

9. The magnetron sputtering electrode of claim 8, further comprising a second substrate;

the second substrate is positioned at one side of the first magnetic field adjusting device, which is away from the first substrate;

the first magnetic field adjusting device is fixed between the second substrate and the first substrate.

10. The magnetron sputtering electrode of claim 9, wherein the first magnetic field adjustment device is detachably secured to the second substrate.

11. The magnetron sputtering electrode of claim 9, wherein the first magnetic field adjustment device is adhesively secured to the second substrate.

12. A magnetron sputtering apparatus comprising a magnetron sputtering electrode as claimed in any one of claims 1 to 11.

13. The magnetron sputtering apparatus of claim 12 further comprising:

a vacuum sputtering chamber for providing a vacuum environment; the magnetron sputtering electrode is arranged in the vacuum sputtering chamber;

a substrate carrying device arranged in the vacuum sputtering chamber and used for carrying and processing the substrate;

A gas introduction means for introducing a gas into the vacuum sputtering chamber;

and the sputtering power supply is used for providing power for the target.

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