CN218958857U - Photovoltaic photo-thermal integrated device and glass curtain wall - Google Patents
Photovoltaic photo-thermal integrated device and glass curtain wall Download PDFInfo
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- CN218958857U CN218958857U CN202222321422.1U CN202222321422U CN218958857U CN 218958857 U CN218958857 U CN 218958857U CN 202222321422 U CN202222321422 U CN 202222321422U CN 218958857 U CN218958857 U CN 218958857U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
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Abstract
The application discloses photovoltaic photo-thermal integrated device and glass curtain wall, the device includes: the thin film photovoltaic module is positioned at the outer side of the photovoltaic and photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into electric energy; the light-transmitting photo-thermal assembly is positioned at the inner side of the photovoltaic photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into heat energy; a hollow layer; and the heat conduction device is positioned between the thin film photovoltaic component and the light-transmitting photo-thermal component and used for isolating heat conduction between the thin film photovoltaic component and the light-transmitting photo-thermal component. The device can make sunlight penetrate, so the device can be applied to a glass curtain wall, photovoltaic power generation and photo-thermal conversion are realized simultaneously under the condition of ensuring light penetration, the full spectrum of sunlight is utilized to the maximum extent, the influence of sunlight radiation on indoor temperature is reduced while the photovoltaic photo-thermal effect is generated, the heat insulation effect of a building is realized, natural light illumination is provided, and the energy consumption of the building is reduced.
Description
Technical Field
The application belongs to the technical field of photovoltaic photo-thermal integration, and particularly relates to a photovoltaic photo-thermal integration device and a glass curtain wall.
Background
Solar energy is a sufficient clean renewable energy source, and can be converted and utilized through photo-thermal and photovoltaic technologies. When the traditional silicon-based assembly performs photovoltaic and photo-thermal integration, a heat collecting plate is additionally arranged on a back plate of the photovoltaic assembly to absorb heat energy of the photovoltaic assembly, and the collected heat energy is transmitted to a heat storage system through a heat exchanger. The photo-thermal integrated mode is suitable for a traditional photovoltaic module, but is not suitable for a thin film photovoltaic module needing light transmission. Light transmissive thin film photovoltaic modules are commonly used in glass curtain walls, which can lead to problems of light opacity if conventional absorber plates are mounted directly on the back of the light transmissive thin film module.
Therefore, a new photovoltaic photo-thermal integrated device and a glass curtain wall are needed to solve the above technical problems.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the present application is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used to determine the scope of the claimed subject matter.
The application provides a photovoltaic photo-thermal integrated device, it includes: the thin film photovoltaic module is positioned at the outer side of the photovoltaic and photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into electric energy; the light-transmitting photo-thermal assembly is positioned at the inner side of the photovoltaic photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into heat energy; the hollow layer is positioned between the thin film photovoltaic module and the light-transmitting photo-thermal module and used for isolating heat conduction between the thin film photovoltaic module and the light-transmitting photo-thermal module.
Illustratively, the thin film photovoltaic module is stacked with: the device comprises a glass substrate, a transparent conductive layer, a magnesium-doped zinc oxide buffer layer, a selenium-doped cadmium telluride absorption layer, a copper-doped zinc telluride back contact buffer layer and an electrode.
Illustratively, the light-transmitting photo-thermal assembly is provided with: the heat pipe is arranged between the first laminated glass and the second laminated glass, and the hollow layer is arranged between the electrode and the first laminated glass.
Illustratively, transparent conductive oxide nanoparticles are also included in the polyvinyl butyral film layer, the transparent conductive oxide nanoparticles being for absorbing radiation of sunlight.
Illustratively, the transparent conductive oxide nanoparticles in the polyvinyl butyral film layer comprise indium antimony oxide, tin antimony oxide, or cesium tungsten bronze.
Illustratively, the transparent conductive oxide nanoparticles in the polyvinyl butyral film layer are less than 100nm in size.
Illustratively, the heat pipe has a thickness of less than 0.5mm.
For example, the hollow layer may be evacuated or nitrogen gas may be introduced.
Illustratively, the photovoltaic photo-thermal integrated apparatus further comprises an aluminum frame for fixing the thin film photovoltaic module and the light-transmitting photo-thermal module. The application also provides a glass curtain wall, which comprises the photovoltaic photo-thermal integrated device.
The utility model provides a photovoltaic light and heat integrated device suitable for glass curtain wall, the device is owing to can make sunlight see through, so can be applied to glass curtain wall, under the circumstances of guaranteeing the printing opacity, realizes photovoltaic power generation and photo-thermal conversion simultaneously, carries out the maximize to the full spectrum of sunlight and utilizes, when producing photovoltaic light and heat effect, reduces the influence of sunlight radiation to indoor temperature, realizes the thermal-insulated effect of building to provide natural light illumination, reduce the energy consumption of building.
Drawings
The following drawings of the present application are included to provide an understanding of the present application as part of the present application. The drawings illustrate embodiments of the present application and their description to explain the principles of the present application.
In the accompanying drawings:
FIG. 1 is a schematic structural view of a photovoltaic photo-thermal integrated apparatus according to an embodiment of the present application;
FIG. 2 is a schematic structural view of a thin film photovoltaic module according to an embodiment of the present application;
reference numerals illustrate:
100 photovoltaic photo-thermal integrated device
101 film photovoltaic module 102 aluminum frame
103 hollow layer 104 first laminated glass
105 polyvinyl butyral film 106 heat pipe
107 second laminated glass
201 glass substrate 202 transparent conductive layer
203 magnesium-doped zinc oxide buffer layer 204 selenium-doped cadmium telluride absorption layer
205 cadmium telluride absorber 206 copper-doped zinc telluride back contact buffer layer
207 electrode
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application may be practiced without one or more of these details. In other instances, some features well known in the art have not been described in order to avoid obscuring the present application.
It should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the utility model are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present application. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present application should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present application.
Before describing embodiments of the present application, the following related terms are explained in the present application.
Photovoltaic photo-thermal integration: the solar energy conversion device combines solar radiation heat energy with a photoelectric technology, fully utilizes the advantages of photovoltaic technology and photo-thermal technology, effectively combines the photovoltaic technology and the photo-thermal technology, and maximally converts and utilizes solar energy.
Cadmium telluride (CdTe): the compound composed of tellurium element and cadmium element is a good film photovoltaic material. The photovoltaic thin film battery of cadmium telluride has high photoelectric conversion efficiency, theoretical efficiency of 28 percent, is always seen by the photovoltaic community, and is the best photovoltaic thin film battery commercialized at present.
A heat pipe: an efficient heat transfer device. The heat-conducting material has the characteristics of high heat-conducting property, simple structure, reliable operation, uniform temperature, isothermicity and the like. The heat pipe is a heat transfer element which realizes heat transfer by means of self-internal working liquid phase change, has quite wide application range, is applied to the aerospace field at the earliest stage, is widely applied to various heat exchangers, coolers, natural geothermal references and the like, plays a role of rapid heat conduction, and is the most common and efficient heat conduction component in the heat dissipation device of the electronic product nowadays.
Transparent conductive oxide (Transparent Conducting Oxide, TCO): the material mainly comprises oxides of In, sn and Zn and composite multi-oxides thereof, and has the photoelectric characteristics of forbidden bandwidth, high light transmittance In the visible spectrum region, low resistivity and the like. Among them, indium antimony oxide (ITO), tin antimony oxide (ATO) and cesium tungsten bronze (CWO) nanoparticles are often used in thermally insulating PVB films for absorbing solar radiation.
Polyvinyl butyral (Polyvinyl Butyral, PVB) film: polyvinyl butyral (PVB) film is a polymer material formed by plasticizing and extruding polyvinyl butyral resin through a plasticizer triethylene glycol di-isooctanoate (3 GO). The polyvinyl butyral (PVB) film is mainly used for laminated glass, and a PVB film taking polyvinyl butyral as a main component is sandwiched between two pieces of glass.
The following describes a photovoltaic photo-thermal integrated apparatus according to an embodiment of the present application in detail with reference to fig. 1.
As shown in fig. 1, a photovoltaic and photo-thermal integrated apparatus 100 for a glass curtain wall according to the present embodiment includes: a 101 film photovoltaic module, a 102 aluminum frame, a 103 hollow layer, a 104 first laminated glass, a 105 polyvinyl butyral film, 106 heat pipes and 107 second laminated glass, wherein Transparent Conductive Oxide (TCO) nanoparticles (not shown) are added in the 105 polyvinyl butyral (PVB) film. In this example, a first layer 104 of laminated glass, a 105 layer of polyvinyl butyral (PVB) film, and a second layer 107 of laminated glass together comprise a light transmissive photothermal assembly. The 106 heat pipe is arranged in a 105 polyvinyl butyral film (PVB film) layer between the 104 first laminated glass and the 107 second laminated glass, the thickness of the 105 polyvinyl butyral (PVB) film layer is thinner, and the 106 heat pipe is preferably an ultrathin heat pipe with the thickness of less than 0.5mm. The 101 film photovoltaic module and the light-transmitting photo-thermal module are fixed through a 102 aluminum frame, and a 103 hollow layer is arranged between the 101 film photovoltaic module and the light-transmitting photo-thermal module. 103 the hollow layer can be vacuumized or filled with nitrogen gas for isolating 101 heat conduction between the thin film photovoltaic module and the light-transmitting photo-thermal module.
With continued reference to fig. 1, in this embodiment, when the 100-volt photo-thermal integrated device is used for a glass curtain wall (not shown), sunlight is injected from the 101-film photovoltaic module located outside the 100-volt photo-thermal integrated device, and the 101-film photovoltaic module converts the sunlight into electric energy through a photoelectric effect by using visible light in a wavelength range of 350nm to 850 nm. Sunlight penetrating through the 101 film photovoltaic module passes through a 105 polyvinyl butyral (PVB) film layer added with Transparent Conductive Oxide (TCO) nano particles, radiation in a near infrared region (780 nm-1100 nm) in the sunlight is absorbed by the Transparent Conductive Oxide (TCO) nano particles, and heat generated by absorption is transmitted to a heat storage system (not shown) through 106 heat pipes in the 105 polyvinyl butyral (PVB) film layer.
The application also provides a structure of the 101 thin film photovoltaic module according to an embodiment, as shown in fig. 2, sequentially stacking from outside to inside: the semiconductor device comprises a glass substrate 201, a transparent conductive layer 202, a magnesium doped zinc oxide (MgZnO) buffer layer 203, a selenium doped cadmium telluride (CdTeSe) absorbing layer 204, a cadmium telluride (CdTe) absorbing layer 205, a copper doped zinc telluride (ZnTeCu) back contact buffer layer 206 and 107 electrodes. In this embodiment, the preparation flow of the 101 thin film photovoltaic module is as follows: (1) Cleaning a 201 glass substrate, preparing a 202 transparent conductive layer with the thickness of 600nm in a vacuum sputtering mode, wherein the working pressure in a sputtering cavity is 10 -2 To 10 -3 Between torrs, the working gas is argon, and pulsed direct current power supply is used for deposition. (2) Preparing a 203 magnesium-doped zinc oxide (MgZnO) buffer layer with the thickness of 10nm by vacuum physical sputtering, wherein the working pressure in a sputtering cavity is 10 -2 To 10 -3 Between torrs, the working gas is argon, and pulsed direct current power supply is used for deposition. (3) A204 selenium-doped cadmium telluride (CdTeSe) absorption layer with the thickness of 100nm is prepared in a near-empty sublimation mode, and the deposition temperature is 600 ℃. (4) A 205 cadmium telluride (CdTe) absorbing layer with the thickness of 3 μm-5 μm is prepared in a near empty sublimation mode,the deposition temperature is 600 ℃, and after the preparation of 205 cadmium telluride (CdTe) absorption layer is completed, the surface activation treatment of cadmium chloride (CdCl) is carried out. (5) And preparing a 206 copper-doped zinc telluride (ZnTeCu) back contact buffer layer with the thickness of 30-150 nm in a vacuum sputtering mode. (6) The electrode 207 is prepared by screen printing, and the electrode 207 may be a silver electrode, for example.
The photovoltaic photo-thermal integrated device and the glass curtain wall have the following advantages: the device light transmission can be applied to glass curtain wall, can carry out the utilization of maximization to sunlight full spectrum, realizes the thermal-insulated effect of building when producing photovoltaic photo-thermal effect, reduces the energy consumption. Through the full spectrum utilization of sunlight, the device can maximize the photovoltaic photo-thermal effect of the sunlight, and meanwhile, the heat insulation effect of the building can be realized under the condition that lighting is not affected, and the energy consumption is reduced.
Although the illustrative embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the above illustrative embodiments are merely illustrative and are not intended to limit the scope of the present application thereto. Various changes and modifications may be made therein by one of ordinary skill in the art without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as set forth in the appended claims.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the several embodiments provided in this application, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described device embodiments are merely illustrative, e.g., the division of the elements is merely a logical functional division, and there may be additional divisions when actually implemented, e.g., multiple elements or components may be combined or integrated into another device, or some features may be omitted or not performed.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the present application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in order to streamline the application and aid in understanding one or more of the various inventive aspects, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of the application. However, the method of this application should not be construed to reflect the following intent: i.e., the claimed application requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.
It will be understood by those skilled in the art that all of the features disclosed in this application (including the accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be combined in any combination, except combinations where the features are mutually exclusive. Each feature disclosed in this application (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the present application and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the terms first, second, third, etc. do not denote any order. These words are to be interpreted as names.
Claims (10)
1. A photovoltaic photo-thermal integrated apparatus, comprising:
the thin film photovoltaic module is positioned at the outer side of the photovoltaic and photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into electric energy;
the light-transmitting photo-thermal assembly is positioned at the inner side of the photovoltaic photo-thermal integrated device, can transmit sunlight and is used for converting solar energy into heat energy;
the hollow layer is positioned between the thin film photovoltaic module and the light-transmitting photo-thermal module and used for isolating heat conduction between the thin film photovoltaic module and the light-transmitting photo-thermal module.
2. The photovoltaic and photothermal integrated device according to claim 1, wherein the thin film photovoltaic module is sequentially stacked with: the device comprises a glass substrate, a transparent conductive layer, a magnesium-doped zinc oxide buffer layer, a selenium-doped cadmium telluride absorption layer, a copper-doped zinc telluride back contact buffer layer and an electrode.
3. The photovoltaic and photothermal integrated device according to claim 2, wherein the light-transmitting photothermal assembly is provided with, in order from outside to inside: the heat pipe is arranged between the first laminated glass and the second laminated glass, and the hollow layer is arranged between the electrode and the first laminated glass.
4. The photovoltaic photo-thermal integrated apparatus of claim 3 wherein the polyvinyl butyral film layer further comprises transparent conductive oxide nanoparticles for absorbing solar radiation.
5. The photovoltaic photo-thermal integrated apparatus of claim 4 wherein the transparent conductive oxide nanoparticles in the polyvinyl butyral film layer comprise indium antimony oxide, tin antimony oxide, or cesium tungsten bronze.
6. The photovoltaic photo-thermal integrated apparatus of claim 4 wherein transparent conductive oxide nanoparticles in the polyvinyl butyral film layer are less than 100nm in size.
7. A photovoltaic photo-thermal integrated apparatus according to claim 3 wherein the thickness of the heat pipe is less than 0.5mm.
8. The photovoltaic and photothermal integrated device according to claim 1, wherein the hollow layer is evacuated or nitrogen is introduced.
9. The photovoltaic and photothermal integrated apparatus of claim 1, further comprising an aluminum frame for securing the thin film photovoltaic module and the light-transmissive photothermal module.
10. A glass curtain wall comprising the photovoltaic photo-thermal integrated apparatus of any one of claims 1-9.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117820793A (en) * | 2024-03-04 | 2024-04-05 | 龙焱能源科技(杭州)有限公司 | Thermal insulation film, thermal insulation cadmium telluride photovoltaic module comprising thermal insulation film, preparation method and application of thermal insulation film |
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2022
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117820793A (en) * | 2024-03-04 | 2024-04-05 | 龙焱能源科技(杭州)有限公司 | Thermal insulation film, thermal insulation cadmium telluride photovoltaic module comprising thermal insulation film, preparation method and application of thermal insulation film |
CN117820793B (en) * | 2024-03-04 | 2024-07-02 | 龙焱能源科技(杭州)有限公司 | Thermal insulation film, thermal insulation cadmium telluride photovoltaic module comprising thermal insulation film, preparation method and application of thermal insulation film |
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