CN218941056U - High vibration-resistant patch crystal oscillator - Google Patents
High vibration-resistant patch crystal oscillator Download PDFInfo
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- CN218941056U CN218941056U CN202222606573.1U CN202222606573U CN218941056U CN 218941056 U CN218941056 U CN 218941056U CN 202222606573 U CN202222606573 U CN 202222606573U CN 218941056 U CN218941056 U CN 218941056U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The utility model relates to the technical field of chip crystal oscillators and discloses a high vibration-resistant chip crystal oscillator, which comprises a first shell, wherein heat-conducting gaskets are fixedly arranged on four walls in the first shell, a fixing bolt is fixedly arranged at the bottom end in the first shell, an oscillator shell is fixedly arranged at the top end of the fixing bolt, oscillator main bodies are fixedly arranged on two sides of the bottom end in the oscillator shell, wafers are fixedly arranged at the top ends of the two oscillator main bodies, two first pins and two second pins are respectively fixedly arranged at four corners of the top end of the oscillator shell, and negative electrode leading ports are fixedly arranged at the top ends of the two first pins. In the high vibration-resistant patch crystal oscillator, the current market fundamental frequency can only achieve 50M, the fundamental frequency is 80M, the reference frequency is used for controlling the accuracy of the frequency in the circuit, the higher the fundamental frequency is, the better the stability is, and meanwhile the working efficiency of the crystal oscillator is improved.
Description
Technical Field
The utility model relates to the technical field of chip crystal oscillators, in particular to a high vibration-resistant chip crystal oscillator.
Background
A high frequency crystal oscillator is a key component in electronic devices, and is widely used as a reference frequency source in navigation, communication, radar, measuring instruments and other devices, and is called a "heart" of such electronic devices. The traditional crystal oscillator mainly comprises an oscillating circuit board and a crystal resonator, wherein each pin of the crystal resonator is directly fixed on the oscillating circuit board. When the traditional crystal oscillator works in a vibration environment, external forces such as vibration, centrifugation and impact generated by the external environment can be directly transmitted to the crystal resonator through the oscillation circuit board, and the noise performance of the crystal resonator is poor and even the basic function is lost due to the strong impact force.
Through searching, the prior patent (publication number: CN 215186664U) discloses a patch crystal oscillator with high strength, high performance and high precision. This patent technology is convenient for fix the main part through setting up fixing device, and then has avoided the product to take place to rock in the transportation, leads to the crystal oscillator to produce the condition that rocks and drop, avoids the mutual collision between the patch crystal oscillator simultaneously, appears the condition of damaging, and then improves equipment's stability, reduces user's economic loss, but exists on the crystal resonator, the too big problem of strong impact force to lead to noise performance variation. Accordingly, a high vibration resistant patch crystal oscillator is provided by those skilled in the art to solve the above-mentioned problems.
Disclosure of Invention
The utility model aims to solve the defects existing in the prior art, and provides a high vibration-resistant patch crystal oscillator, wherein the existing market fundamental frequency can only achieve 50M, the fundamental frequency is 80M, the reference frequency controls the frequency accuracy in a circuit, the higher the fundamental frequency is, the better the stability is, the working efficiency of the crystal oscillator is improved, the heat conducting gasket arranged on the four walls of the first shell can resist the heat emitted by the oscillating plate assembly in the use process, the service life is long, the high vibration-resistant performance is not easy to age, compared with the existing temperature-compensated crystal oscillator, the high vibration-resistant performance is kept for a long time, the high heat energy is stored, the influence of the change of the external environment temperature on the crystal oscillator is avoided, the influence of the heat stress is reduced, the output vibration characteristic of the crystal oscillator is improved, the frequency output stability of the crystal oscillator is improved, the crystal is placed in the oscillator shell, the space is saved, the output frequency of the crystal oscillator is automatically changed along with the temperature, and the temperature compensation of the output frequency is realized.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the high vibration-resistant patch crystal oscillator comprises a first shell and a second shell, wherein heat-conducting gaskets are fixedly arranged on four walls in the first shell, a fixing bolt is fixedly arranged at the bottom end in the first shell, an oscillator shell is fixedly arranged at the top end of the fixing bolt, an oscillator main body is fixedly arranged on two sides of the bottom end in the oscillator shell, and wafers are fixedly arranged at the top ends of the two oscillator main bodies; two first pins and two second pins are fixedly arranged at four corners of the top end of the oscillator shell respectively, the two first pins are fixedly provided with negative electrode lead interfaces at the top ends, and the two second pins are fixedly provided with positive electrode lead interfaces at the top ends.
Through the technical scheme, the accuracy of the frequency in the circuit can only be controlled by the base frequency of 50M, the base frequency of 80M and the reference frequency at present, the higher the base frequency is, the better the stability is, the working efficiency of the crystal oscillator is improved, the heat conducting gasket arranged on the four walls of the first shell can resist the heat emitted by the oscillating plate assembly in the use process, the service life is long, the crystal oscillator is not easy to age, the good vibration resistance is kept for a long time compared with the existing temperature compensation crystal oscillator, the high heat energy is stored in the crystal oscillator, the influence of the change of the external environment temperature on the crystal oscillator is avoided, the influence of the stress heat is reduced, the shaking characteristic of the output of the crystal oscillator is improved, and the stability of the frequency output of the crystal oscillator is improved.
Further, clamping blocks are fixedly arranged at four corners of the top end of the first shell;
through above-mentioned technical scheme, with first casing and the fixed joint of second casing through four fixture blocks.
Further, pin grooves are fixedly formed in four corners of the second shell;
through the technical scheme, the four pin grooves respectively penetrate through the first pin and the second pin.
Further, a plurality of vibration bulges are fixedly arranged at the top end of the wafer;
through the technical scheme, the vibration bulge controls the vibration amplitude of the crystal oscillator.
Further, a plurality of first clamping grooves are fixed in the middle of the second shell;
through above-mentioned technical scheme, first draw-in groove and vibrations protruding fixed connection.
Further, a third clamping groove is fixedly formed in the middle of the bottom end of the oscillator shell;
through above-mentioned technical scheme, third draw-in groove and fixing bolt threaded connection.
Further, mounting holes are fixedly formed in four corners of the bottom end of the first shell;
through above-mentioned technical scheme, the mounting hole is convenient for install.
Further, the first clamping groove is fixedly clamped with the vibration bulge;
through the technical scheme, the first clamping groove corresponds to the vibration protrusion.
The utility model has the following beneficial effects:
1. the high vibration-resistant patch crystal oscillator provided by the utility model has the advantages that the frequency of the fundamental frequency of the market can only be 50M, the frequency of the fundamental frequency is 80M, the reference frequency is used for controlling the accuracy of the frequency in the circuit, the higher the frequency of the fundamental frequency is, the better the stability is, and meanwhile, the working efficiency of the crystal oscillator is also improved.
2. The heat conducting gasket arranged on the four walls of the first shell can resist heat emitted by the oscillating plate in the use process, has long service life, is not easy to age, keeps good vibration resistance for a long time compared with the traditional temperature-compensated crystal oscillator, enables the crystal oscillator to store higher heat energy, further avoids the influence of external environment temperature change on the crystal oscillator, reduces the influence of stress heat, improves the output jitter characteristic of the crystal oscillator, and improves the frequency output stability of the crystal oscillator.
3. According to the high vibration-resistant patch crystal oscillator provided by the utility model, the crystal is placed in the oscillator shell and placed in the chip, so that the space is saved, meanwhile, the output frequency of the crystal oscillator automatically changes along with the temperature, and the temperature compensation of the output frequency is realized.
Drawings
FIG. 1 is an isometric view of a highly vibration-resistant patch crystal oscillator according to the present utility model;
FIG. 2 is a diagram showing an overturning perspective view of a high vibration-resistant chip wafer;
FIG. 3 is an exploded view of a highly vibration-resistant patch crystal oscillator according to the present utility model;
fig. 4 is a front cross-sectional view of an oscillator housing of a high vibration resistant chip crystal oscillator according to the present utility model.
Legend description:
1. a first housing; 2. a second housing; 3. a first pin; 4. vibrating the bulge; 5. a mounting hole; 6. a fixing bolt; 7. an oscillator housing; 8. a first clamping groove; 9. a pin slot; 10. a clamping block; 11. a thermally conductive gasket; 12. a second pin; 13. an anode lead interface; 14. a negative electrode lead port; 15. a wafer; 16. a third clamping groove; 17. an oscillator body.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-4, one embodiment provided by the present utility model is: the high vibration-resistant patch crystal oscillator comprises a first shell 1 and a second shell 2, wherein heat-conducting gaskets 11 are fixedly arranged on four walls inside the first shell 1, a fixing bolt 6 is fixedly arranged at the bottom end inside the first shell 1, an oscillator shell 7 is fixedly arranged at the top end of the fixing bolt 6, oscillator main bodies 17 are fixedly arranged at two sides of the bottom end inside the oscillator shell 7, and wafers 15 are fixedly arranged at the top ends of the two oscillator main bodies 17; two first pins 3 and two second pins 12 are respectively and fixedly arranged at four corners of the top end of the oscillator shell 7, negative electrode lead interfaces 14 are respectively and fixedly arranged at the top ends of the two first pins 3, and positive electrode lead interfaces 13 are respectively and fixedly arranged at the top ends of the two second pins 12.
Clamping blocks 10 are fixedly arranged at four corners of the top end of the first shell 1, the first shell 1 and the second shell 2 are fixedly clamped through the four clamping blocks 10, pin grooves 9 are fixedly arranged at four corners of the second shell 2, the four pin grooves 9 penetrate through the first pin 3 and the second pin 12 respectively, a plurality of vibration bulges 4 are fixedly arranged at the top end of a wafer 15, the vibration bulges 4 control crystal vibration amplitude, a plurality of first clamping grooves 8 are fixedly arranged in the middle of the second shell 2, the first clamping grooves 8 are fixedly connected with the vibration bulges 4, a third clamping groove 16 is fixedly arranged in the middle of the bottom end of the oscillator shell 7, the third clamping grooves 16 are in threaded connection with the fixing bolts 6, mounting holes 5 are fixedly arranged at four corners of the bottom end of the first shell 1, the mounting holes 5 are convenient to mount, the first clamping grooves 8 are fixedly clamped with the vibration bulges 4, and the first clamping grooves 8 correspond to the vibration bulges 4.
Working principle: the oscillator housing 7 is fixedly connected through the fixing bolts 6 at the bottom end inside the first shell 1, the second shell 2 is fixedly clamped with the second shell 2 through the clamping blocks 10 at four corners of the top end of the first shell 1, then, the two oscillator main bodies 17 work to output fundamental frequency 80M, at the moment, the heat conducting gaskets 11 arranged on the four walls of the first shell 1 resist heat emitted by the oscillator main bodies 17 in the using process, and the oscillator is long in service life and not easy to age.
Finally, it should be noted that: the foregoing description is only illustrative of the preferred embodiments of the present utility model, and although the present utility model has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements or changes may be made without departing from the spirit and principles of the present utility model.
Claims (8)
1. The utility model provides a high anti vibration chip crystal oscillator, includes first casing (1) and second casing (2), its characterized in that: the novel high-voltage oscillator is characterized in that heat conduction gaskets (11) are fixedly arranged on four walls inside the first shell (1), fixing bolts (6) are fixedly arranged at the bottom end inside the first shell (1), oscillator shells (7) are fixedly arranged at the top ends of the fixing bolts (6), oscillator main bodies (17) are fixedly arranged on two sides of the bottom end inside the oscillator shells (7), and wafers (15) are fixedly arranged at the top ends of the two oscillator main bodies (17);
two first pins (3) and two second pins (12) are respectively and fixedly arranged at four corners of the top end of the oscillator shell (7), a negative electrode lead interface (14) is fixedly arranged at the top end of each first pin (3), and a positive electrode lead interface (13) is fixedly arranged at the top end of each second pin (12).
2. A high vibration resistant patch crystal as set forth in claim 1 wherein: clamping blocks (10) are fixedly arranged at four corners of the top end of the first shell (1).
3. A high vibration resistant patch crystal as set forth in claim 1 wherein: pin grooves (9) are fixedly formed in four corners of the second shell (2).
4. A high vibration resistant patch crystal as set forth in claim 1 wherein: a plurality of vibration bulges (4) are fixedly arranged at the top end of the wafer (15).
5. A high vibration resistant patch crystal as set forth in claim 1 wherein: a plurality of first clamping grooves (8) are fixed in the middle of the second shell (2).
6. A high vibration resistant patch crystal as set forth in claim 1 wherein: a third clamping groove (16) is fixedly formed in the middle of the bottom end of the oscillator shell (7).
7. A high vibration resistant patch crystal as set forth in claim 1 wherein: mounting holes (5) are fixedly formed in four corners of the bottom end of the first shell (1).
8. The high vibration resistant patch crystal oscillator of claim 5, wherein: the first clamping groove (8) is fixedly clamped with the vibration bulge (4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202222606573.1U CN218941056U (en) | 2022-09-30 | 2022-09-30 | High vibration-resistant patch crystal oscillator |
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CN202222606573.1U CN218941056U (en) | 2022-09-30 | 2022-09-30 | High vibration-resistant patch crystal oscillator |
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CN218941056U true CN218941056U (en) | 2023-04-28 |
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CN202222606573.1U Active CN218941056U (en) | 2022-09-30 | 2022-09-30 | High vibration-resistant patch crystal oscillator |
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2022
- 2022-09-30 CN CN202222606573.1U patent/CN218941056U/en active Active
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