CN218920386U - Low noise amplifier circuit, low noise amplifier and quantum computer - Google Patents
Low noise amplifier circuit, low noise amplifier and quantum computer Download PDFInfo
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- CN218920386U CN218920386U CN202222822660.0U CN202222822660U CN218920386U CN 218920386 U CN218920386 U CN 218920386U CN 202222822660 U CN202222822660 U CN 202222822660U CN 218920386 U CN218920386 U CN 218920386U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
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Abstract
The application provides a low-noise amplifier circuit, a low-noise amplifier and a quantum computer, which belong to the field of radio frequency, in particular to the field of quantum technology, and comprise a plurality of stages of signal amplifying units which are sequentially connected in series, wherein each signal amplifying unit receives a power supply signal through an RC filtering unit; the bias voltage of each signal amplifying unit is respectively regulated by a connected power supply signal; and the resistance value of the resistor in the RC filter unit is ohm level. The low-noise amplifier improves the stability of the working performance of the low-noise amplifier in an extremely low-temperature environment and reduces the power consumption.
Description
Technical Field
The application belongs to the field of radio frequency, in particular to the field of quantum technology, and particularly relates to a low-noise amplifier circuit, a low-noise amplifier and a quantum computer.
Background
The low noise amplifier is a very important component part in modern radio frequency and microwave systems, and is widely applied to communication, radars, various high-precision measurement and scientific research experimental equipment in various subjects. The low noise amplifier is an important part of the front-end of the radio frequency receiver. The main function of the method is to amplify the received weak signal and overcome the noise of the subsequent stages with high enough gain. Its gain will suppress the noise of the subsequent circuit, which plays a decisive role in the noise of the whole system. With the continuous development of radio frequency technology, the requirements for the low noise amplifier are increased, so that the low noise amplifier has more requirements for parameters such as power consumption, bandwidth, gain flatness and the like, and also has certain requirements for the working environment which can be adapted to the low noise amplifier.
In the field of quantum computing, a quantum processor usually works in an extremely low-temperature environment with millikelvin temperature, in order to realize nondestructive reading of the quantum processor, a measurement signal applied to the quantum processor is extremely weak, so that a microwave signal output by the quantum processor is also extremely weak, and in order to enable a room-temperature microwave detection device to accurately measure the microwave signal, a low-noise amplifier is required to amplify and suppress noise of a microwave signal output by a quantum bit in the extremely low-temperature environment at the rear end of the quantum processor, so that the microwave signal is prevented from being annihilated by the noise signal.
When the low-noise amplifier in the prior art is applied to an extremely low-temperature environment, the performance parameters of the transistor elements of the low-noise amplifier can be changed, so that the performance of the low-noise amplifier is influenced, and the high heat dissipation capacity of power consumption greatly influences the temperature stability of the extremely low-temperature environment.
Disclosure of Invention
The low-noise amplifier circuit, the low-noise amplifier and the quantum computer overcome the defects that in the prior art, the low-noise amplifier works in an extremely low temperature environment and has poor performance and high power consumption, and improve the stability of the working performance of the low-noise amplifier in the extremely low temperature environment and reduce the power consumption.
The technical scheme of the application is as follows:
an aspect of the present application provides a low noise amplifier circuit, including a plurality of stages of signal amplifying units sequentially connected in series, each of the signal amplifying units receiving a power signal through an RC filter unit, respectively;
the bias voltage of each signal amplifying unit is respectively regulated by a connected power supply signal; and the resistance value of the resistor in the RC filter unit is ohm level.
The low noise amplifier circuit as described above, preferably, the signal amplifying unit includes a signal amplifier;
the collector of the signal amplifier is connected with the first end of the RC filter unit and outputs an amplified radio frequency signal, and the second end of the RC filter unit receives the power signal;
the base electrode of the signal amplifier receives a signal to be amplified or a radio frequency signal output by the collector electrode of the signal amplifier of the previous stage signal amplifying unit;
the emitter of the signal amplifier is grounded.
The low noise amplifier circuit as described above, preferably, the signal amplifying unit further includes a first capacitor;
the first end of the first capacitor is connected with the collector electrode of the signal amplifier or receives the signal to be amplified;
and the second end of the first capacitor is connected with the base electrode of the signal amplifier or outputs the amplified radio frequency signal.
In the low noise amplifier circuit as described above, preferably, the signal amplifying unit further includes a first resistor, a first end of the first resistor is connected to the base of the signal amplifier, and a second end of the first resistor is connected to the collector of the signal amplifier.
The low noise amplifier circuit as described above, preferably, further comprises an impedance matching unit;
the first end of the impedance matching unit is connected with the collector electrode of the signal amplifier, and the second end of the impedance matching unit is connected with the first end of the first capacitor.
The low noise amplifier circuit as described above, preferably, the impedance matching unit includes a second capacitor and a second resistor connected in parallel;
a first end of the second capacitor connected in parallel with the second resistor is connected with the collector electrode of the signal amplifier;
and a second end of the parallel connection of the second capacitor and the second resistor is connected with the first end of the first capacitor.
The low noise amplifier circuit as described above, preferably, the RC filter unit includes a pi filter network or a T filter network.
The low noise amplifier circuit as described above, preferably, the pi-type filter network includes a third capacitor, a fourth capacitor, and a third resistor;
the first end of the third resistor is connected with the collector electrode of the signal amplifier, and the second end of the third resistor receives the power supply signal;
the first end of the third capacitor is connected with the first end of the third resistor, and the second end of the third capacitor is grounded;
and the first end of the fourth capacitor is connected with the second end of the third resistor, and the second end of the fourth capacitor is grounded.
The low noise amplifier circuit as described above, preferably, the RC filter unit further comprises a first inductor;
the first end of the first inductor is connected with the first end of the third resistor, and the second end of the first inductor is connected with the emitter of the signal amplifier.
Another aspect of the present application provides a low noise amplifier, comprising a PCB board, and a low noise amplifier circuit as described in any one of the above integrated with the PCB board.
A further aspect of the present application provides a quantum measurement system comprising a measurement device and a quantum processor connected by a measurement line, the measurement line having integrated thereon a low noise amplifier as described in the other aspect above.
Compared with the prior art, the application has the following beneficial effects:
the low-noise amplifier circuit comprises a plurality of stages of signal amplifying units which are sequentially connected in series, wherein each signal amplifying unit receives a power supply signal through an RC filtering unit; the bias voltage of each signal amplifying unit is respectively regulated by a connected power supply signal; and the resistance value of the resistor in the RC filter unit is ohm level. The gain of the low-noise amplifier is ensured to meet the amplification requirement of microwave signals output by the quantum processor by adopting the multi-stage signal amplification unit. Each stage of signal amplifying unit is connected with an independent power supply through an independent RC filtering unit, stability of a power supply signal is guaranteed through the RC filtering unit, bias voltage of a transistor can be corrected through adjusting the power supply signal output by the independent power supply, stability of overall performance of the low-noise amplifier is guaranteed not to be affected by parameter change of a transistor element in an extremely low temperature environment, and stability of working performance of the low-noise amplifier in the extremely low temperature environment is improved. In addition, the resistance value of the resistor in the RC filter unit is selected to be an ohmic-level resistor, the resistance value is smaller, and the lower power consumption of the resistor when passing through a power supply signal is ensured.
Drawings
Fig. 1 is a schematic diagram of a low noise amplifier circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic circuit diagram of a signal amplifying unit according to an embodiment of the present application;
fig. 3 is a schematic circuit diagram of a signal amplifying unit including a signal amplifier according to an embodiment of the present application;
fig. 4 is a schematic circuit diagram of a signal amplifying unit including a first capacitor according to an embodiment of the present application;
fig. 5 is a schematic circuit diagram of a signal amplifying unit including a first resistor according to an embodiment of the present application;
fig. 6 is a schematic circuit diagram of a signal amplifying unit including an impedance matching unit according to an embodiment of the present application;
fig. 7 is a schematic circuit diagram of an RC filter unit according to an embodiment of the present disclosure;
fig. 8 is a schematic circuit diagram of an RC filter unit including a first inductor according to an embodiment of the present application.
Reference numerals illustrate:
the circuit comprises a 1-signal amplifying unit, a 2-RC filtering unit, a 3-impedance matching unit, a 11-signal amplifier, a 12-first capacitor, a 13-first resistor, a 21-third resistor, a 22-third capacitor, a 23-fourth capacitor, a 24-first inductor, a 31-second capacitor and a 32-second resistor.
Detailed Description
The following detailed description is merely illustrative and is not intended to limit the embodiments and/or the application or uses of the embodiments. Furthermore, there is no intention to be bound by any expressed or implied information presented in the preceding background or brief summary or the detailed description section.
For purposes of clarity, technical solutions, and advantages of embodiments of the present application, one or more embodiments will now be described with reference to the drawings, wherein like reference numerals are used to refer to like components throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a more thorough understanding of one or more embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details, and that such embodiments may be incorporated by reference herein without departing from the scope of the claims.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In a quantum computer, the state of reading the quantum bit is based on the principle of dispersion frequency shift, and the number of photons in the optical field is sufficiently low by applying a very weak detection signal to the optical field, so that the influence of the optical field and the detection signal on the quantum bit is reduced to a negligible extent, and the nondestructive reading of the quantum bit by the optical field is further realized. The detection signal is very weak, the microwave signal output by the quantum bit is also very weak, and the signal power is usually lower than-100 dBm; whereas commercial instruments at room temperature are typically capable of measuring microwave signals around-20 dBm, a low noise amplifier is required to amplify the microwave signal output by the qubit, and multiple stages of low noise amplifier cascade amplification are required. In addition, the frequency of the microwave signal output by the qubit is very high, and is in the gigahertz frequency band, and the working frequency band of the low noise amplifier is also in the gigahertz frequency band. For example, the quantum processor of a superconducting system, the operating frequency of which is typically in the 4GHz-8GHz frequency range, and the quantum processor of a semiconductor system, the operating frequency of which is typically in the 0.1GHz-4GHz frequency range.
Both quantum processors of superconducting and semiconductor systems are typically operated in very low temperature environments, such as 30 millikelvin, and are typically housed inside dilution refrigerators. The microwave detection device is usually arranged in a room temperature environment outside the dilution refrigerator, and a measurement circuit is usually connected with the quantum processor and the microwave detection device. In order to realize nondestructive reading of the quantum processor, the measurement signal applied to the quantum processor is very weak, so that the microwave signal output by the quantum processor is also very weak, and in order to enable the room-temperature microwave detection device to accurately measure the microwave signal, a low-noise amplifier is generally used for amplifying and suppressing noise on the microwave signal output by the quantum bit in a measuring line of an extremely low-temperature environment at the rear end of the quantum processor, so that the microwave signal is prevented from being annihilated by the noise signal.
As shown in fig. 1, the embodiment of the present application provides a low noise amplifier circuit, which includes a plurality of signal amplifying units 1 connected in series in sequence, wherein each signal amplifying unit 1 receives a power signal through an RC filter unit 2; wherein, the bias voltage of each signal amplifying unit 1 is respectively adjusted by the connected power supply signals; the resistance of the resistor in the RC filter unit 2 is of ohm level.
Specifically, the low-noise amplifier circuit of the embodiment of the application is applied to a semiconductor quantum computer, the low-temperature environment is 4 Kelvin, the working frequency band of a quantum processor is 0.1GHz-4GHz, the power of a microwave signal output by the quantum processor is about-100 dBm, and the microwave signal needs to be continuously amplified by adopting a plurality of stages of signal amplifying units 1 which are sequentially connected in series, so that the microwave signal can be measured by a microwave detection device. In one embodiment, the low noise amplifier circuit adopts three stages of signal amplifying units 1 connected in series, the first stage of signal amplifying unit 1 is used for reducing signal noise of the low noise amplifier, the second stage of signal amplifying unit 1 is used for adjusting gain flatness parameters of the low noise amplifier, and the third stage of signal amplifying unit 1 is used for improving gain parameters of the low noise amplifier.
The signal amplifying unit 1 is an active device, and needs to provide a power supply signal to ensure normal operation, each stage of signal amplifying unit 1 is connected with an independent power supply through an independent RC filtering unit 2, and the RC filtering unit 2 not only can filter the power supply signal to ensure the stability of the power supply signal, but also has an impedance matching function and is used for matching the impedance between the independent power supply and the signal amplifying unit 1. In addition, the bias voltage of the transistor is corrected by adjusting the power signal output by the independent power supply, so that the overall performance stability of the low-noise amplifier is ensured not to be influenced by parameter variation of the transistor element in an extremely low temperature environment, and the stability of the working performance of the low-noise amplifier in the extremely low temperature environment is improved.
In addition, when active devices in the circuit work, power consumption and heat can be generated, the power consumption and the heat can change along with the resistance of the components and the size of the current flowing through the components, and the resistance value of the resistance in the RC filter unit 2 is set to be an ohm-level resistance, so that the resistance is smaller, and the power consumption generated when the resistance passes through a power supply signal is ensured to be lower.
As shown in fig. 2, as an implementation of the embodiment of the present application, the signal amplifying unit 1 includes a signal amplifier 11; the collector of the signal amplifier 11 is connected with the first end of the RC filter unit 2 and outputs an amplified radio frequency signal, and the second end of the RC filter unit receives the power signal; the base electrode of the signal amplifier 11 receives a signal to be amplified or a radio frequency signal output by the collector electrode of the signal amplifier 11 of the previous stage signal amplifying unit 1; the emitter of the signal amplifier 11 is grounded. In the communication and radio frequency fields, a signal amplifier 11 is generally used for amplifying radio frequency or microwave signals, where the signal amplifier 11 in the embodiment of the present application includes a base, a collector, and an emitter, where the base is used as a signal input end and is used to receive a signal to be amplified, or is connected to the collector of the signal amplifier 11 of the previous stage signal amplifying unit 1, and receives a radio frequency signal amplified by the previous stage signal amplifier 11; the collector is used as a signal output end and outputs the amplified radio frequency signal to a signal amplifier 11 of a signal amplifying unit 1 at the subsequent stage or the radio frequency signal amplified by the integral low noise amplifier, and in addition, the collector is also used as a power end and connected with an RC filter unit 2 to receive a power signal; the emitter is connected as a ground terminal to ground.
As shown in fig. 3, as an implementation manner of the embodiment of the present application, the signal amplifying unit 1 further includes a first capacitor 12; a first end of the first capacitor 12 is connected with a collector electrode of the signal amplifier 11 or receives the signal to be amplified; the second end of the first capacitor 12 is connected to the base of the signal amplifier 11 or outputs an amplified radio frequency signal. Specifically, the collector of each stage of signal amplifier 11 is not only used as a power supply end to receive a power supply signal, but also used as a signal output end to be connected with the base electrode of the next stage of signal amplifier 11, and the first end of the first capacitor 12 is connected with the collector of the signal amplifier 11 by arranging the first capacitor 12 on the collector of each stage of signal amplifier 11, and the second end of the first capacitor 12 is connected with the base electrode of the next stage of signal amplifier 11, so that the power supply signal is prevented from being transmitted to the base electrode of the next stage of signal amplifier 11 or directly output along with a radio frequency signal by the DC blocking effect of the first capacitor 12. In addition, a first capacitor 12 is also disposed on the base of the first stage signal amplifier 11, so as to avoid the transmission of the power signal to the signal input terminal of the low noise amplifier.
As shown in fig. 4, as an implementation manner of the embodiment of the present application, the signal amplifying unit 1 further includes a first resistor 13, a first end of the first resistor 13 is connected to the base of the signal amplifier 11, and a second end of the first resistor 13 is connected to the collector of the signal amplifier 11. The first resistor 13 is used as a negative feedback resistor to connect the base electrode and the collector electrode of the signal amplifier 11, so that the working bandwidth of the signal amplifier 11 is improved, and the bandwidth of the output microwave signal of the semiconductor quantum processor is matched.
As shown in fig. 5, as an implementation of the embodiment of the present application, the low noise amplifier circuit further includes an impedance matching unit 3; a first end of the impedance matching unit 3 is connected to the collector of the signal amplifier 11, and a second end of the impedance matching unit 3 is connected to a first end of the first capacitor 12. The signal amplifier 11 of the first stage signal amplifying unit 1 and the collector of the signal amplifier 11 of the last stage signal amplifying unit 1 are respectively provided with an impedance matching unit 3 for impedance matching the input and output of the low noise amplifier circuit, and reducing noise entering the low noise amplifier circuit.
Specifically, as shown in fig. 6, as an implementation manner of the embodiment of the present application, the impedance matching unit 3 includes a second capacitor 31 and a second resistor 32 connected in parallel; a first end of the second capacitor 31 and the second resistor 32 which are connected in parallel is connected with the collector of the signal amplifier 11; a second end of the parallel connection of the second capacitor 31 and the second resistor 32 is connected to a first end of the first capacitor 12. The second capacitor 31 and the second resistor 32 which are connected in parallel are adopted as the impedance matching unit 3 to match the impedance of the signal element in the circuit, so that noise generated by unmatched impedance when microwave signals are transmitted in the circuit is avoided.
As shown in fig. 7, as an implementation manner of the embodiment of the present application, the RC filter unit 2 includes a pi-type filter network or a T-type filter network. Specifically, the pi-type filter network includes a third capacitor 22, a fourth capacitor 23 and a third resistor 21; a first end of the third resistor 21 is connected to the collector of the signal amplifier 11, and a second end of the third resistor 21 receives the power signal; a first end of the third capacitor 22 is connected to a first end of the third resistor 21, and a second end of the third capacitor 22 is grounded; the first end of the fourth capacitor 23 is connected to the second end of the third resistor 21, and the second end of the fourth capacitor 23 is grounded. In the electronic field, the filter network includes, but is not limited to, a pi-type filter network or a T-type filter network, and in this embodiment, the pi-type filter network is adopted, so that the number of resistor elements in the filter network is small, and the power consumption in operation can be reduced. Wherein the resistance of the third resistor 21 is typically selected to be of the ohmic level.
As shown in fig. 8, as an implementation manner of the embodiment of the present application, the RC filter unit 2 further includes a first inductor 24; a first end of the first inductor 24 is connected to a first end of the third resistor 21, and a second end of the first inductor 24 is connected to an emitter of the signal amplifier 11. In this embodiment, the first inductor 24 is set in the RC filter unit 2 connected to the first stage signal amplifying unit 1 and the last stage signal amplifying unit 1 to perform impedance matching, where the first inductor 24 in the RC filter unit 2 connected to the first stage signal amplifying unit 1 participates in noise matching, so as to reduce noise of a circuit, and the first inductor 24 in the RC filter unit 2 connected to the last stage signal amplifying unit 1 participates in power matching, so as to improve gain of the circuit.
Based on the same application conception, the embodiment of the application provides a low noise amplifier, which comprises a PCB and any one of the low noise amplifier circuits integrated on the PCB.
Based on the same application conception, the embodiment of the application provides a quantum measurement system, which comprises a measurement device and a quantum processor which are connected through a measurement line, wherein the measurement line is integrated with the low-noise amplifier.
The foregoing detailed description of the construction, features and advantages of the present application will be presented in terms of embodiments illustrated in the drawings, wherein the foregoing description is merely illustrative of preferred embodiments of the application, and the scope of the application is not limited to the embodiments illustrated in the drawings.
Claims (11)
1. The low noise amplifier circuit is characterized by comprising a plurality of stages of signal amplifying units which are sequentially connected in series, wherein each signal amplifying unit receives a power supply signal through an RC filtering unit;
the bias voltage of each signal amplifying unit is respectively regulated by a connected power supply signal; and the resistance value of the resistor in the RC filter unit is ohm level.
2. The low noise amplifier circuit according to claim 1, wherein the signal amplifying unit includes a signal amplifier;
the collector of the signal amplifier is connected with the first end of the RC filter unit and outputs an amplified radio frequency signal, and the second end of the RC filter unit receives the power signal;
the base electrode of the signal amplifier receives a signal to be amplified or a radio frequency signal output by the collector electrode of the signal amplifier of the previous stage signal amplifying unit;
the emitter of the signal amplifier is grounded.
3. The low noise amplifier circuit of claim 2, wherein the signal amplifying unit further comprises a first capacitor;
the first end of the first capacitor is connected with the collector electrode of the signal amplifier or receives the signal to be amplified;
and the second end of the first capacitor is connected with the base electrode of the signal amplifier or outputs the amplified radio frequency signal.
4. The low noise amplifier circuit of claim 2, wherein the signal amplifying unit further comprises a first resistor, a first terminal of the first resistor being connected to the base of the signal amplifier, and a second terminal of the first resistor being connected to the collector of the signal amplifier.
5. A low noise amplifier circuit according to claim 3, further comprising an impedance matching unit;
the first end of the impedance matching unit is connected with the collector electrode of the signal amplifier, and the second end of the impedance matching unit is connected with the first end of the first capacitor.
6. The low noise amplifier circuit according to claim 5, wherein the impedance matching unit includes a second capacitor and a second resistor connected in parallel;
a first end of the second capacitor connected in parallel with the second resistor is connected with the collector electrode of the signal amplifier;
and a second end of the parallel connection of the second capacitor and the second resistor is connected with the first end of the first capacitor.
7. The low noise amplifier circuit of claim 2, wherein the RC filter unit comprises a pi filter network or a T filter network.
8. The low noise amplifier circuit of claim 7, wherein the pi filter network comprises a third capacitor, a fourth capacitor, and a third resistor;
the first end of the third resistor is connected with the collector electrode of the signal amplifier, and the second end of the third resistor receives the power supply signal;
the first end of the third capacitor is connected with the first end of the third resistor, and the second end of the third capacitor is grounded;
and the first end of the fourth capacitor is connected with the second end of the third resistor, and the second end of the fourth capacitor is grounded.
9. The low noise amplifier circuit of claim 8, wherein the RC filter unit further comprises a first inductor;
the first end of the first inductor is connected with the first end of the third resistor, and the second end of the first inductor is connected with the emitter of the signal amplifier.
10. A low noise amplifier comprising a PCB and a low noise amplifier circuit as claimed in any one of claims 1 to 9 integrated with said PCB.
11. A quantum computer comprising a measurement device and a quantum processor connected by a measurement line, the measurement line having integrated thereon the low noise amplifier of claim 10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222822660.0U CN218920386U (en) | 2022-10-25 | 2022-10-25 | Low noise amplifier circuit, low noise amplifier and quantum computer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222822660.0U CN218920386U (en) | 2022-10-25 | 2022-10-25 | Low noise amplifier circuit, low noise amplifier and quantum computer |
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| CN218920386U true CN218920386U (en) | 2023-04-25 |
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| CN202222822660.0U Active CN218920386U (en) | 2022-10-25 | 2022-10-25 | Low noise amplifier circuit, low noise amplifier and quantum computer |
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