CN218849758U - Microstrip waveguide conversion transition structure based on non-radiation side feed - Google Patents
Microstrip waveguide conversion transition structure based on non-radiation side feed Download PDFInfo
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- CN218849758U CN218849758U CN202320014299.0U CN202320014299U CN218849758U CN 218849758 U CN218849758 U CN 218849758U CN 202320014299 U CN202320014299 U CN 202320014299U CN 218849758 U CN218849758 U CN 218849758U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application discloses a microstrip waveguide transition structure based on non-radiation side feed, which comprises a laminated board and a waveguide structure; the laminated board comprises a first dielectric substrate, a second dielectric substrate and a prepreg positioned between the first dielectric substrate and the second dielectric substrate; the upper surface of the first dielectric substrate is provided with a microstrip line, a microstrip line avoiding area is arranged between the microstrip line and the copper coating on the upper surface of the first dielectric substrate, a metal grounding hole is arranged beside the microstrip line to form a grounding coplanar waveguide structure, and the metal grounding hole is connected with the copper coatings on the upper surface and the lower surface of the first dielectric substrate; the tail end of the microstrip line is connected with a radiation patch, and a connection point of the microstrip line and the radiation patch is arranged on one side of a narrow edge of the radiation patch, so that the non-radiation side feed design is realized. Compared with the traditional horizontal broadside waveguide conversion, the transverse size of the conversion structure is greatly reduced, and a plurality of conversion structures which are transversely arranged and distributed can be more compact.
Description
Technical Field
The application relates to a microstrip waveguide conversion transition structure based on non-radiation side feed, belonging to the technical field of waveguide antennas.
Background
With the rapid development of automatic driving in recent years, the millimeter wave radar has been more and more emphasized due to the characteristics of strong penetrability, strong anti-interference capability and the like, and in order to increase the detection distance and improve the resolution of the millimeter wave radar, the antenna aperture of the radar is enlarged, the number of channels is increased, and meanwhile, the feeder loss and the phase consistency of the antenna are also concerned. The common practice in the industry at present is to adopt a microstrip series feed antenna scheme and complete the design of an in-phase feed line through reasonable array layout, but the coplanar design of the feed line and the antenna has the disadvantages that the complexity of the layout and the wiring of the feed line is influenced due to the increase of the number of channels and the change of the layout of a front surface facing different scenes, so that the loss of the feed line is increased, and great interference is caused to a radiation pattern of the antenna. In order to improve the feed loss and reduce the influence of the feed line on the antenna, patent document CN111164825A provides a structure for converting the PCB into the waveguide, which can realize that the feed line transmission is completed by replacing GCPW with a waveguide cavity, but the GCPW waveguide structure mentioned in the technical scheme needs to complete the matching between the waveguide and the PCB by an additional balun design, so that the width of the conversion structure cannot be further reduced, and in addition, the waveguide also completes the impedance matching by the size change of three-segment cavities, which increases the difficulty of actual processing.
SUMMERY OF THE UTILITY MODEL
The technical problem that this application will be solved is that adopt waveguide transmission to replace microstrip feeder transmission can improve the loss but the great problem that causes adverse effect and the performance deterioration that processing assembly tolerance arouses to the lateral dimension of transform structure that current waveguide conversion width is great.
In order to solve the technical problems, the technical scheme of the application is to provide a microstrip waveguide transition structure based on non-radiation side feed, which comprises a laminated board and a waveguide structure connected with the laminated board;
the laminated board comprises a first dielectric substrate, a second dielectric substrate and a prepreg positioned between the first dielectric substrate and the second dielectric substrate, wherein copper coatings are arranged on the upper surface and the lower surface of each of the first dielectric substrate and the second dielectric substrate;
the upper surface of the first dielectric substrate is provided with a microstrip line, a microstrip line avoiding area is arranged between the microstrip line and the copper coating on the upper surface of the first dielectric substrate, a metal grounding hole is arranged beside the microstrip line to form a grounding coplanar waveguide structure, and the metal grounding hole is connected with the copper coatings on the upper surface and the lower surface of the first dielectric substrate; the tail end of the microstrip line is connected with a radiation patch, and the connection point of the microstrip line and the radiation patch is arranged on one side of the narrow edge of the radiation patch.
Preferably, two horizontal slits are formed in the radiation patch, and four sides of the radiation patch are respectively provided with a slot.
Preferably, a rectangular avoidance area is arranged between the radiation patch and the copper coating on the upper surface of the first dielectric substrate, the rectangular avoidance area is communicated with the microstrip line avoidance area, and a row of metal grounding holes are formed in the periphery of the rectangular avoidance area.
Preferably, the waveguide structure comprises a bed of nails structure connected with the upper surface of the first dielectric substrate, a radiation structure connected with the bed of nails structure and a transmission waveguide connected with the radiation structure. Furthermore, the nail bed structure comprises an isolation cavity with a covering area larger than the rectangular avoiding area, and a nail bed arranged around the rectangular avoiding area is arranged in the isolation cavity.
Preferably, the waveguide structure is in direct contact with the first dielectric substrate or is provided with a gap at an interval.
The innovation point of the application is that the non-radiation side feed scheme is adopted, and the conversion connection of the transmission line and the waveguide on the laminating plate is completed through the artificial magnetic conductor structure realized by the nail bed. The advantages are as follows: 1. by utilizing the electromagnetic forbidden band generated by the nail bed structure, the performance deterioration caused by the contact gap between the waveguide and the PCB can be ignored, and a simpler connection and fixation mode can be used; 2. the waveguide transmission is used for replacing the microstrip feeder transmission, so that the transmission loss is reduced; 3. compared with the traditional horizontal broadside waveguide conversion, the non-radiation side-fed PCB waveguide conversion structure greatly reduces the transverse width of the conversion structure, and can ensure that the conversion structures of different channels are more compactly spaced; 4. compared with narrow-edge waveguide conversion adopting balun design, the PCB waveguide conversion structure using non-radiation edge offset feed is simpler and more compact in structure; 5. the transmission waveguide is vertically arranged, the transverse width is the short side of the waveguide, the width is smaller than that of a horizontally arranged single ridge waveguide, the transmission loss is better than that of the horizontally arranged single ridge waveguide, and the transmission waveguide distance of different channels can be smaller.
Drawings
Fig. 1-1 is a three-dimensional schematic diagram of a microstrip waveguide transition structure provided herein;
FIGS. 1-2 are side schematic views of a microstrip waveguide conversion mechanism provided herein;
FIG. 2-1 is a schematic side view of a laminate provided herein;
fig. 2-2 is a three-dimensional schematic view of a microstrip waveguide transition structure laminate portion provided herein;
fig. 3 is a three-dimensional schematic diagram of a microstrip waveguide transition structure provided herein;
FIG. 4-1 is a three-dimensional schematic diagram of three adjacently arranged microstrip waveguide transition structures provided herein;
4-2 is a schematic top view of three adjacently arranged microstrip waveguide transition structures provided herein;
fig. 5 is a graph of a relationship between reflection coefficient and frequency of three adjacent microstrip waveguide conversion structures provided in the present application;
fig. 6 is a diagram of insertion loss versus frequency of three microstrip waveguide conversion structures arranged adjacently according to the present application;
FIG. 7-1 is a three-dimensional schematic of a prior art design waveguide transition structure used as a reference;
FIG. 7-2 is a three-dimensional schematic view of a waveguide transition structure provided herein;
FIG. 8 is a graph of insertion loss at different dielectric slab-to-waveguide distances for a prior design waveguide transition structure used as a reference; comparing the images;
fig. 9 is a graph illustrating insertion loss comparison under different distances between a dielectric plate and a waveguide of a waveguide conversion structure provided in the present application;
fig. 10 is a three-dimensional schematic diagram of a radar antenna based on a waveguide conversion structure provided in the present application.
Detailed Description
In order to make the present application more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.
The transition structure of the microstrip line and the waveguide provided by the embodiment, referring to fig. 1-1 and fig. 1-2, includes a laminate 1 and a waveguide structure 2.
Referring to fig. 2-1, the laminated board 1 includes a first dielectric substrate 11, a second dielectric substrate 12, and a prepreg 13 located between the first dielectric substrate 11 and the second dielectric substrate 12, wherein both the upper and lower surfaces of the first dielectric substrate 11 are provided with copper coatings, the upper and lower surfaces of the second dielectric substrate 12 are also provided with copper coatings, and the first dielectric substrate 11 and the second dielectric substrate 12 are fixed to form a whole by pressing the prepreg 13.
Referring to fig. 2-2, a microstrip line 111 is disposed on the upper surface of the first dielectric substrate 11, the microstrip line 111 is etched on the upper surface of the first dielectric substrate 11 by an etching method, a microstrip line avoiding region 114 is disposed between the microstrip line 111 and the copper cladding layer on the upper surface of the first dielectric substrate 11, two rows of metal grounding holes 112 are disposed beside the microstrip line 111 to form a grounded coplanar waveguide structure, energy is transmitted by constraining the first dielectric substrate 11 and an electric field in a free space, so as to reduce transmission loss of the microstrip line 111, and the metal grounding holes 112 are connected to the copper cladding layers on the upper and lower surfaces of the first dielectric substrate 11. The tail end of the microstrip line 111 is connected with a radiation patch 113, the connection point of the microstrip line 111 and the radiation patch 113 is arranged on one side of the narrow side of the radiation patch 113, the non-radiation side feed design is realized, the current direction of the radiation patch 113 is in the horizontal direction, the left side and the right side of the radiation patch 113 are radiation sides, the transverse size of the patch can be reduced in design, the connection position of the radiation patch 113 and the microstrip line 111 is not necessarily in the most edge, as long as the connection position is not in the middle position and is as close to the edge position as possible, the horizontal polarization current can be formed at any offset position, and the specific offset distance can be matched with impedance matching to perform limited test adjustment. The radiation patch 113 has two horizontal slots 1131 in its inside, and four slots 1132 on each of its four sides, and the slots 1131 and 1132 are designed for patch miniaturization and impedance matching. A rectangular avoidance area 1133 is arranged between the radiation patch 113 and the upper surface copper coating of the first dielectric substrate 11, the rectangular avoidance area 1133 is connected with the microstrip line avoidance area 114, and a row of metal grounding holes 1134 are arranged on the periphery of the rectangular avoidance area 1133 and have the same action as the metal grounding holes 112.
Referring to fig. 3, the waveguide structure 2 includes a bed structure 21, a radiation structure 22 and a transmission waveguide 23, and the waveguide structure 2 is a structure hollowed out inside a metal structural member, which may also be other structural members capable of implementing a surface metallization process. The waveguide structure 2 is connected to the upper surface of the first dielectric substrate 11, and may be in direct contact with the upper surface or may have a gap.
The nail bed structure 21 comprises an isolation cavity with a coverage area larger than that of the rectangular avoidance area 1133, a nail bed arranged around the rectangular avoidance area 1133 is arranged inside the isolation cavity, the size of the nail bed can be a rectangular metal column or a metal cylinder, the frequency range of the electromagnetic forbidden band is determined by the size, the interval and the height of the nail bed, and the nail bed is outside the range of the rectangular avoidance area 1133. The isolation cavity outside the nail bed keeps a certain distance with the nail bed, the isolation cavity in the middle can be removed by two same microstrip waveguide conversion structures which are horizontally placed, and only the nail bed is reserved. The radiating structure 22 is connected to the bed structure 21. The transmission waveguide 23 is connected with the radiation structure 22 and keeps the same height, the width and height of the transmission waveguide 23 correspond to the standard size of the WR12 waveguide, and the cross section width of the transmission waveguide 23 is used as the short side of the rectangular waveguide, so that the influence on the waveguide routing layout caused by overlarge transverse dimension is avoided.
The transition conversion structure of the microstrip line and the waveguide comprises the laminated board and the waveguide structure, and waveguide transmission is used for replacing microstrip feeder transmission, so that the insertion loss of a feeder is greatly improved. Meanwhile, a PCB waveguide conversion structure with non-radiation side feed is adopted, compared with the traditional horizontal broadside waveguide conversion, the transverse size of the conversion structure is greatly reduced, a plurality of conversion structures which are transversely arranged and distributed can be more compact, the transverse size of the traditional horizontal waveguide conversion structure cannot be reduced under the condition of meeting certain transmission performance due to the fact that radiation patches adopt vertical polarization, and the distance between adjacent conversion structures is large, but the transverse distance of the waveguide conversion structure designed by the application can be 2.45mm, as shown in figures 4-1 and 4-2, the transverse width of the waveguide after passing through the conversion structure is the short side of a rectangular waveguide, the standard waveguide size of WR10 is selected on the basis of meeting cutoff frequency, the short side is only 1.27mm and is close to the transverse width of a grounded coplanar waveguide, and when different arrangements are faced, the design freedom is close to the traditional microstrip antenna arrangement.
As shown in FIG. 5, the microstrip waveguide transition structure satisfies S11 < -23dB at 76GHz-80GHz, and does not generate interference due to the close distance between the three same structures, as shown in FIG. 6, the insertion loss of the transition structure at 76GHz-80GHz is within-0.61 dB, and the structure performance at three different positions is almost the same.
Compared with the PCB waveguide conversion structure provided in the published patent document CN111164825A, the PCB waveguide conversion structure adopting non-radiation side feeding can realize 180-degree phase difference design by replacing balun with offset feeding, the structure of the radiation patch is simpler and more compact, and the interference caused by too close distance between the radiation patch and surrounding metal caused by balun design is avoided, so that the transverse size of the whole conversion structure is limited. The waveguide structure realizes the conversion between the grounding coplanar waveguide and the WR10 waveguide directly through one-time impedance transformation, and compared with the multiple changes of a cavity in a reference patent, the waveguide structure is simpler to process and more convenient to optimize. Compared with the PCB waveguide conversion structure in the published patent document CN115036701A, as shown in fig. 7-1 and 7-2, a nail bed structure is added to the original waveguide cavity to form an Artificial Magnetic Conductor (AMC), so as to suppress the propagation of an electromagnetic field in the gap between the dielectric plate and the waveguide, and avoid the influence on the module performance due to energy leakage caused by the installation problem of the conversion structure. This design reduces the difficulty of installation and is acceptable even if there is a gap between the dielectric plate and the waveguide. As shown in fig. 8, for the reflection coefficient of the conversion structure between the dielectric plate and the waveguide in the original design at different distances, it can be seen that the insertion loss is deteriorated by 0.22dB when the gap distance is 0.1 mm; correspondingly, as shown in fig. 9, it can be seen that the insertion loss influence is small when the gap distance is within 0.1mm for the reflection coefficient diagram of the conversion structure between the dielectric plate and the waveguide of the module designed in the present application at different distances.
Fig. 10 is a three-dimensional schematic diagram of a radar antenna based on a waveguide conversion structure provided in the present application, and specifically, is a vehicle-mounted radar antenna unit, where the antenna part is designed based on a microstrip waveguide conversion structure designed in the present application, and the overall structure is composed of four parts, respectively: laminate board, waveguide structure, polarization-changing structure and ridge waveguide slot antenna. One end of the four-section grounding coplanar waveguide structure is connected with the chip through the solder ball welding point position, and the other end of the four-section grounding coplanar waveguide structure is connected with the waveguide structure through the radiation patch, so that the insertion loss and the phase difference of the four-section grounding coplanar waveguide transmission line are ensured to be consistent.
The foregoing detailed description is given by way of example only, to better enable one of ordinary skill in the art to understand the patent, and is not to be construed as limiting the scope of what is encompassed by the patent; any modification or modification that is substantially the same as or equivalent to the technical content disclosed in the present patent application is included in the scope of the present patent application.
Claims (6)
1. A microstrip waveguide transition structure based on non-radiation side feed is characterized by comprising a laminated board (1) and a waveguide structure (2) connected with the laminated board (1);
the laminated board (1) comprises a first dielectric substrate (11), a second dielectric substrate (12) and a prepreg (13) positioned between the first dielectric substrate (11) and the second dielectric substrate (12), wherein copper coatings are arranged on the upper surface and the lower surface of the first dielectric substrate (11) and the upper surface and the lower surface of the second dielectric substrate (12);
a microstrip line (111) is arranged on the upper surface of the first dielectric substrate (11), a microstrip line avoiding region (114) is arranged between the microstrip line (111) and the copper coating on the upper surface of the first dielectric substrate (11), a metal grounding hole is arranged beside the microstrip line (111) to form a grounded coplanar waveguide structure, and the metal grounding hole is connected with the copper coatings on the upper surface and the lower surface of the first dielectric substrate (11); the tail end of the microstrip line (111) is connected with a radiation patch (113), and the connection point of the microstrip line (111) and the radiation patch (113) is arranged on one side of the narrow side of the radiation patch (113).
2. The transition structure of microstrip waveguide transition based on non-radiative side-feed of claim 1, wherein two horizontal slots (1131) are formed inside the radiating patch (113), and one slot (1132) is formed on each of four sides.
3. The microstrip waveguide transition structure based on non-radiation side feed as claimed in claim 1, wherein a rectangular bypass region (1133) is disposed between the radiation patch (113) and the copper cladding layer on the upper surface of the first dielectric substrate (11), the rectangular bypass region (1133) is communicated with the microstrip line bypass region (114), and a row of metal grounding holes is disposed on the periphery of the rectangular bypass region (1133).
4. A microstrip waveguide transition structure based on non-radiative side-feed according to claim 3, wherein the waveguide structure (2) comprises a bed of nails structure (21) connected with the upper surface of the first dielectric substrate (11), a radiation structure (22) connected with the bed of nails structure (21) and a transmission waveguide (23) connected with the radiation structure (22).
5. The microstrip waveguide transition structure based on non-radiative side feed according to claim 4, wherein the nailing bed structure (21) comprises an isolation cavity with a coverage area larger than that of the rectangular avoidance region (1133), and the nailing bed arranged around the rectangular avoidance region (1133) is arranged in the isolation cavity.
6. The microstrip waveguide transition structure based on non-radiative side-feed according to claim 5, wherein the waveguide structure (2) is in direct contact with the first dielectric substrate (11) or is provided with a gap at an interval.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202320014299.0U CN218849758U (en) | 2023-01-04 | 2023-01-04 | Microstrip waveguide conversion transition structure based on non-radiation side feed |
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| CN202320014299.0U CN218849758U (en) | 2023-01-04 | 2023-01-04 | Microstrip waveguide conversion transition structure based on non-radiation side feed |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116315643A (en) * | 2023-04-20 | 2023-06-23 | 深圳市锦鸿无线科技有限公司 | Multi-beam antenna array, operation control method and device thereof and storage medium |
| CN117728139A (en) * | 2023-08-28 | 2024-03-19 | 上海威浪达科技有限公司 | Microstrip to waveguide structure, waveguide antenna and radar |
-
2023
- 2023-01-04 CN CN202320014299.0U patent/CN218849758U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116315643A (en) * | 2023-04-20 | 2023-06-23 | 深圳市锦鸿无线科技有限公司 | Multi-beam antenna array, operation control method and device thereof and storage medium |
| CN116315643B (en) * | 2023-04-20 | 2023-12-29 | 深圳市锦鸿无线科技有限公司 | Multi-beam antenna array, operation control method and device thereof and storage medium |
| CN117728139A (en) * | 2023-08-28 | 2024-03-19 | 上海威浪达科技有限公司 | Microstrip to waveguide structure, waveguide antenna and radar |
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