CN218710830U - A gas inlet structure of a plasma-enhanced chemical vapor deposition system - Google Patents

Abstract

The utility model belongs to the technical field of plasma-enhanced chemical vapor deposition, and discloses an intake structure of a plasma-enhanced chemical vapor deposition system, comprising a vacuum chamber, a shower intake device, a rotary heating deposition table, an intake valve, an intake pipe, a vacuum Sealing components and air sources; the shower air intake device and the rotary heating deposition table are all set in the vacuum chamber, the shower air intake device corresponds to the rotary heating deposition table, and the air intake valve and the shower air intake device pass through Intake pipe connection. The main advantage of this scheme is reflected in the use of a shower structure with different apertures to form vent holes, and the diameter of the vent hole is proportional to the distance from the air inlet pipe (that is, the closer the vent hole is to the inlet pipe, the smaller the aperture) , the gas pressure decreases and the gas output is compensated by increasing the pore size, which avoids the uneven distribution of the gas field caused by the traditional gas inlet structure, and can obtain a film with good uniformity.

Description

A gas inlet structure of a plasma-enhanced chemical vapor deposition system

technical field

The utility model relates to the technical field of plasma-enhanced chemical vapor deposition, in particular to an intake structure of a plasma-enhanced chemical vapor deposition system.

Background technique

Plasma-enhanced chemical vapor deposition equipment for implementing plasma-enhanced chemical vapor deposition generally includes an intake structure, a plasma generator, a reaction chamber, an exhaust structure, and a control device.

The existing plasma-enhanced chemical vapor deposition inlet structure mainly adopts the diffuse inlet structure of the ordinary inlet pipe. The main disadvantage is that the gas field distribution is not uniform during the inlet, resulting in uneven gas field of the substrate table and uneven deposition of materials.

Utility model content

Aiming at the problems existing in the prior art, the purpose of the utility model is to provide a gas inlet structure of a plasma enhanced chemical vapor deposition system.

In order to solve the above problems, the utility model adopts the following technical solutions.

A plasma-enhanced chemical vapor deposition system intake structure, including a vacuum chamber, a shower intake device, a rotary heating deposition table, an intake valve, an intake pipe, a vacuum sealing component, and a gas source;

The shower air intake device and the rotary heating deposition table are all arranged in the vacuum chamber, the shower air intake device corresponds to the rotary heating deposition table, the air intake valve is connected to the shower air intake device through an air intake pipe, the The air inlet pipe is fixed on the top plate of the vacuum chamber through a vacuum sealing assembly, and the air inlet pipe is connected with the air source;

The shower air intake device includes a shower tray, a shower orifice and several air holes. The shower orifice is located at the bottom of the shower tray and corresponds to the rotating heating deposition table. On the orifice plate, the diameter of the vent holes is directly proportional to the distance between the air intake pipes.

Compared with the prior art, the utility model has the advantages of:

The main advantage of this scheme is reflected in the use of shower structures with different apertures to form air holes, and the diameter of the air holes is proportional to the distance from the air inlet pipe (that is, the closer the air hole is to the air inlet pipe, the smaller the aperture) , the gas pressure decreases and the gas output is compensated by increasing the pore size, which avoids the uneven distribution of the gas field caused by the traditional gas inlet structure, and can obtain a film with good uniformity.

Description of drawings

Fig. 1 is the structural representation of the utility model;

Fig. 2 is a schematic diagram of the structure of the ventilation hole of the utility model.

Explanation of symbols in the figure:

1. Vacuum chamber; 2. Shower intake device; 21. Shower plate; 22. Shower orifice; 23. Air vent; 3. Rotary heating deposition table; 4. Intake valve; 5. Intake pipe; 6 , Vacuum sealing components; 7, Air source.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention;

Please refer to Figures 1 and 2, an intake structure of a plasma-enhanced chemical vapor deposition system, including a vacuum chamber 1, a shower intake device 2, a rotary heating deposition table 3, an intake valve 4, an intake pipe 5, and a vacuum sealing assembly 6. Air source 7; the shower air intake device 2 and the rotary heating deposition table 3 are all set in the vacuum chamber 1, the shower air intake device 2 corresponds to the rotary heating deposition table 3, and the air intake valve 4 corresponds to the shower air intake device 2 is connected through the air inlet pipe 5, the air inlet pipe 5 is fixed on the top plate of the vacuum chamber 1 through the vacuum sealing assembly 6, and the air inlet pipe 5 is connected with the air source 7; the shower air inlet device 2 includes a shower plate 21 and a shower orifice plate 22 And several air holes 23, the shower hole plate 22 is located at the bottom of the shower plate 21 and corresponds to the rotary heating deposition platform 3, the air hole 23 is opened on the shower hole plate 22, the diameter of the air hole 23 and its distance from the air intake pipe The distance of 5 is directly proportional (promptly the air vent 23 intake pipe 5 mouthpiece distances are closer, and the air vent 23 apertures are smaller).

With the above structure, the air intake valve 4 is opened during work, and the working gas (plasma) flows out from the gas source 7, passes through the air intake valve 4 and the air intake pipe 5, enters the shower tray 21 of the shower air intake device 2, and then flows from the shower tray 21 outflow from each vent hole 23;

Among them, the pressure at the place closest to the intake pipe 5 is the highest, and the gas concentration is balanced by reducing the aperture; the partial pressure difference is the smallest at the place farthest from the intake pipe 5, and the gas field concentration is balanced by increasing the aperture, and finally by adjusting the vent hole 23 pore size to achieve the uniformity of the gas field to achieve a consistent effect.

The above description is only a preferred embodiment of the utility model; however, the scope of protection of the utility model is not limited thereto. Anyone familiar with the technical field within the technical scope disclosed in the utility model, according to the technical solution of the utility model and its improvement concept to make equivalent replacements or changes, shall be covered in the protection scope of the utility model.

Claims (1)

1. A kind of plasma enhances the inlet structure of the chemical vapor deposition system, characterized by that: comprises a vacuum chamber (1), a shower head air inlet device (2), a rotary heating deposition table (3), an air inlet valve (4), an air inlet pipe (5), a vacuum sealing assembly (6) and an air source (7);

the shower head air inlet device (2) and the rotary heating deposition table (3) are arranged in the vacuum chamber (1), the shower head air inlet device (2) corresponds to the rotary heating deposition table (3), the air inlet valve (4) is connected with the shower head air inlet device (2) through an air inlet pipe (5), the air inlet pipe (5) is fixed on a top plate of the vacuum chamber (1) through a vacuum sealing assembly (6), and the air inlet pipe (5) is connected with an air source;

gondola water faucet air inlet unit (2) are including gondola water faucet dish (21), gondola water faucet orifice plate (22) and a plurality of bleeder vent (23), gondola water faucet orifice plate (22) are located the bottom of gondola water faucet dish (21) and correspond with rotatory heating deposit platform (3), bleeder vent (23) are seted up on gondola water faucet orifice plate (22), the diameter size of bleeder vent (23) is directly proportional with the distance length of intake pipe (5).

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