CN218679008U - Control system of GaN power amplifier - Google Patents
Control system of GaN power amplifier Download PDFInfo
- Publication number
- CN218679008U CN218679008U CN202223137213.8U CN202223137213U CN218679008U CN 218679008 U CN218679008 U CN 218679008U CN 202223137213 U CN202223137213 U CN 202223137213U CN 218679008 U CN218679008 U CN 218679008U
- Authority
- CN
- China
- Prior art keywords
- power
- control unit
- power amplifier
- gan
- voltage control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Amplifiers (AREA)
Abstract
The application relates to a control system of a GaN power amplifier, wherein a grid voltage control unit, a power coupler, a power signal converter and a GaN power amplifier tube form a closed loop feedback link, power amplifier control is realized in a closed loop control mode, the stability of the power amplifier is improved, and the possibility of device damage caused by overhigh temperature is avoided; in addition, a hardware circuit does not need to be changed in the adjusting process, the difficulty and the probability of damage of the power amplifier in the actual debugging process are reduced, and meanwhile, slight hardware difference can be made up through software for different hardware boards, so that the method is suitable for batch production.
Description
Technical Field
The application relates to the technical field of power amplifier control, in particular to a control system of a GaN power amplifier.
Background
The existing GaN power amplifier control generally has the following schemes, where Vgs is the gate voltage, and Vds is the drain voltage:
1) Vgs is firstly electrified to a hardware design value, vds is then electrified, and the hardware adjusts the voltage value of Vgs to reach the required power. The disadvantages are that: vgs adjustment needs to be achieved through repeated adjustment of a hardware circuit, so that the debugging is complicated and the power amplifier is easily damaged; meanwhile, vgs cannot adapt to environmental changes (temperature rise), so that the output of the power amplifier is nonlinear in the working process.
2) Vgs is powered up to the nominal value required by the specification, and Vds is powered up again to reach the required power. Has the advantages that: repeated Vgs adjustment can be avoided; the disadvantages are that: different hardware is different, different hardware circuits are required to be adopted among different board cards, and mass production is not facilitated; meanwhile, the Vgs cannot adapt to environmental changes (temperature rise), so that the output of the power amplifier is nonlinear in the working process.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a GaN power amplifier control system to reduce the power amplifier damage probability and hardware debugging difficulty.
A control system of a GaN power amplifier comprises:
the power coupler comprises a grid voltage control unit, a power coupler and a power signal converter;
the grid voltage control unit is connected with the GaN power amplifying tube and used for writing register parameters when the grid of the GaN power amplifying tube is electrified;
the power coupler is connected with the GaN power amplifying tube and used for obtaining the current output power of the GaN power amplifying tube;
the power signal converter is connected with the power coupler and the grid voltage control unit and used for converting an analog signal of current output power into a digital signal and transmitting the digital signal to the grid voltage control unit, and the grid voltage control unit is used for comparing the digital signal with actually required output power to adjust register parameters, so that the GaN power amplifier tube keeps linear output.
According to the control system of the GaN power amplifier, the grid voltage control unit, the power coupler, the power signal converter and the GaN power amplifier tube form a closed loop feedback link, power amplifier control is achieved in a closed loop control mode, the stability of the power amplifier is improved, and the possibility that devices are damaged due to overhigh temperature is avoided; in addition, the hardware circuit does not need to be changed in the adjusting process, the difficulty in the actual debugging process and the probability of damage of the power amplifier are reduced, and meanwhile, for different hardware boards, slight hardware differences can be made up through software, so that the method is suitable for batch production.
Drawings
FIG. 1 is a schematic diagram of a control system of a GaN power amplifier according to an embodiment;
fig. 2 is a schematic block diagram of a GaN power amplifier control system according to an embodiment;
FIG. 3 is a diagram of a gate voltage control unit in one embodiment;
FIG. 4 is a circuit schematic of a power coupler according to one embodiment;
FIG. 5 is a circuit diagram of a power signal converter according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In one embodiment, as shown in fig. 1, a control system of a GaN power amplifier is provided, which includes:
the power supply comprises a grid voltage control unit, a power coupler and a power signal converter.
The grid voltage control unit is connected with the GaN power amplifying tube and used for writing register parameters, namely grid input parameters, when the grid of the GaN power amplifying tube is electrified.
The power coupler is connected with the GaN power amplifying tube and used for obtaining the current output power of the GaN power amplifying tube.
The power signal converter is connected with the power coupler and the grid voltage control unit and used for converting an analog signal of current output power into a digital signal and transmitting the digital signal to the grid voltage control unit, and the grid voltage control unit is used for comparing the digital signal with actually required output power to adjust parameters of a register, so that the GaN power amplifier tube keeps linear output. Specifically, the register parameters may be fine-tuned by the difference between the current output power and the actually required output power to adjust the power amplifier to a linear output range.
In the control system of the GaN power amplifier, the grid voltage control unit, the power coupler, the power signal converter and the GaN power amplifier tube form a closed loop feedback link, power amplifier control is realized in a closed loop control mode, the stability of the power amplifier is improved, meanwhile, the power amplifier is continuously heated due to overhigh transmitting power of a device caused by temperature rise, the closed loop feedback link in the system can carry out power amplifier control in time, and the possibility of damage to the device caused by overhigh temperature is avoided; in addition, a hardware circuit does not need to be changed in the adjusting process, the difficulty and the probability of damage of the power amplifier in the actual debugging process are reduced, and meanwhile, slight hardware difference can be made up through software for different hardware boards, so that the method is suitable for batch production.
In one embodiment, the system further comprises a drain electrode starting control unit, wherein the drain electrode starting control unit is connected with the grid electrode voltage control unit, the GaN power amplifying tube and the power coupler and used for receiving the register parameters and setting the drain electrode starting voltage of the GaN power amplifying tube according to the register parameters so as to determine the power-on time of the drain electrode; the power coupler is used for obtaining the current output power of the GaN power amplifying tube after the drain electrode is electrified, and the on-off of the power coupler can be automatically determined to a certain extent, so that the power supply is saved. As shown in fig. 2, a schematic block diagram of a control system of a GaN power amplifier in this embodiment is provided.
In one embodiment, the drain turn-on control unit includes a turn-on voltage calculation module for calculating the drain turn-on voltage according to the reference voltage of the gate voltage control unit and the register parameter. When the gate voltage control unit is a 10-bit ADC chip, the specific calculation principle is as follows: vds = Vref (value/255), where Vds is the drain turn-on voltage, vref is the reference voltage, and value is the register parameter.
In one embodiment, fig. 3 is a circuit diagram of a gate voltage control unit, where U19 is the gate voltage control unit, and U19 writes a register parameter (value) when it is powered on; fig. 4 is a schematic circuit diagram of a power coupler, where FL9 is the power coupler for obtaining the output power of the current power amplifier; fig. 5 is a circuit diagram of the power signal converter, and U5 is the power signal converter for converting the analog signal into the DAC parameter readback value and sending it back to the gate voltage control unit U19. From fig. 4 and 5, it can be seen that the output CH1PACOUP-OUT of the DOUT terminal of the power coupler FL9 is connected to the RFIN port, i.e. the radio frequency signal access port, of the power converter U5 in fig. 5.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (3)
1. A control system of a GaN power amplifier is characterized in that the system comprises:
the power coupler comprises a grid voltage control unit, a power coupler and a power signal converter;
the grid voltage control unit is connected with the GaN power amplifying tube and used for writing register parameters when the grid of the GaN power amplifying tube is electrified;
the power coupler is connected with the GaN power amplifying tube and is used for acquiring the current output power of the GaN power amplifying tube;
the power signal converter is connected with the power coupler and the grid voltage control unit and used for converting the analog signal of the current output power into a digital signal and transmitting the digital signal to the grid voltage control unit, and the grid voltage control unit is used for comparing the digital signal with actually required output power to adjust the register parameter, so that the GaN power amplifying tube keeps linear output.
2. The system of claim 1, further comprising a drain turn-on control unit;
the drain electrode starting control unit is connected with the grid electrode voltage control unit, the GaN power amplifying tube and the power coupler and used for receiving the register parameters and setting the drain electrode starting voltage of the GaN power amplifying tube according to the register parameters so as to determine the power-on time of the drain electrode;
the power coupler is used for obtaining the current output power of the GaN power amplifier tube after the drain electrode is electrified.
3. The system of claim 2, wherein the drain turn-on control unit comprises a turn-on voltage calculation module;
the starting voltage calculation module is used for calculating the drain starting voltage according to the reference voltage of the grid voltage control unit and the register parameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223137213.8U CN218679008U (en) | 2022-11-24 | 2022-11-24 | Control system of GaN power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223137213.8U CN218679008U (en) | 2022-11-24 | 2022-11-24 | Control system of GaN power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218679008U true CN218679008U (en) | 2023-03-21 |
Family
ID=85540340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223137213.8U Active CN218679008U (en) | 2022-11-24 | 2022-11-24 | Control system of GaN power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218679008U (en) |
-
2022
- 2022-11-24 CN CN202223137213.8U patent/CN218679008U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9647704B2 (en) | Digital predistortion system and method based on envelope tracking and radio frequency system | |
| EP1378057B1 (en) | Saturation prevention and amplifier distortion reduction | |
| CN111711423B (en) | Radio frequency power amplifier, radio frequency front-end module and communication terminal | |
| CN101977022B (en) | Complementary-multiplicative power compensation method, device and communication equipment | |
| CN110098809B (en) | Power supply device for gallium nitride power amplifier time sequence protection | |
| CN104641553A (en) | Power amplification module | |
| CN113037222B (en) | Bias circuit and amplifier | |
| CN207529257U (en) | GaN-HEMT power tube grid drain electrodes sequence of power switching protects biasing circuit | |
| CN107425815B (en) | A kind of power control circuit and power amplification circuit | |
| CN218679008U (en) | Control system of GaN power amplifier | |
| CN100589319C (en) | Power amplifier temperature compensation device and method | |
| CN209949056U (en) | Control circuit and signal receiving and transmitting device of GaN amplifier tube | |
| CN201623690U (en) | TDD (Time Division Duplex) radio-frequency amplifier gate voltage control circuit | |
| CN103634890A (en) | A DPD power amplifier product power scaling method and an apparatus | |
| CN216721284U (en) | Power amplifier module with temperature compensation function | |
| CN114268281A (en) | Power amplification circuit and radio frequency front end module | |
| Wang et al. | GaAs/GaAlAs power HBTs for mobile communications | |
| US20040212433A1 (en) | Power amplifier device and method thereof | |
| JP2017184073A (en) | Power amplification device and control method therefor | |
| CN216929980U (en) | Power amplifier with controllable voltage breakdown | |
| JP2001211038A (en) | Power amplifier | |
| CN110958669A (en) | Intelligent terminal and power control method thereof | |
| EP1766773A1 (en) | Power source and method for controlling operational power | |
| CN101119120A (en) | Transmission circuit and communication device | |
| CN219322373U (en) | Pulse Gaussian signal modulation amplifying circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |