CN209949056U - Control circuit and signal receiving and transmitting device of GaN amplifier tube - Google Patents
Control circuit and signal receiving and transmitting device of GaN amplifier tube Download PDFInfo
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- CN209949056U CN209949056U CN201921014522.1U CN201921014522U CN209949056U CN 209949056 U CN209949056 U CN 209949056U CN 201921014522 U CN201921014522 U CN 201921014522U CN 209949056 U CN209949056 U CN 209949056U
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Abstract
The embodiment of the utility model discloses control circuit and signal transceiver of gaN amplifier tube for realize the control of power on, the electricity time sequence of falling of the gaN amplifier tube of TDD time division multiplexing mode. The control circuit of the GaN amplifier tube is used for controlling the last GaN amplifier tube of the downlink transmission link of the time division multiplexing TDD communication system, and comprises: the power supply module is used for providing a first voltage; the switching module is used for providing a second voltage for controlling power supply to the GaN amplifying tube grid; the control module is used for controlling the grid electrode to be electrified before the drain electrode when the GaN amplifying tube is conducted according to the relation between the first voltage and the second voltage, and controlling the grid electrode to be powered off after the drain electrode when the GaN amplifying tube is switched off.
Description
Technical Field
The utility model relates to a radio frequency technology field among the communication system, in particular to control circuit and signal transceiver of gaN amplifier tube.
Background
With the development of wireless mobile communication technology, Time Division Duplex (TDD) and Frequency Division Duplex (FDD) become two main communication modes of communication. The power amplifier as the radio frequency end amplification unit in the system also develops the operation mode of TDD and FDD. In addition, broadband and high efficiency are urgent requirements for speed increasing, capacity expanding, energy saving and environmental protection of 4G and 5G communication at present, so the GaN amplifier tube with the advantages of wide forbidden band and high efficiency will become the mainstream of the next-generation communication technology.
Because TDD is an uplink and downlink common-frequency and time division multiplexing mode, in order to improve performance indexes such as isolation, reliability, and uplink demodulation capability of the uplink and downlink, a downlink PA link and an uplink Low Noise Amplifier (LNA) link need to be switched according to synchronization signal control of TDD time division multiplexing. Therefore, in a downlink Power Amplifier (PA) link, a switch control circuit is required to control bias power supply and push stage of a preceding amplifier tube, gate voltage power supply of a last Laterally Diffused Metal Oxide Semiconductor (LDMOS) or a GaN amplifier tube, and switch switching delay is required to meet the requirement of a TDD mode.
However, GaN amplifier tubes are different from LDMOS tubes, because of the particularity of the material process, GaN amplifier tubes require a gate to be powered on first and then a drain to be powered on in a power-on sequence, and the level of the gate is negative, only such a power-on sequence can ensure normal power supply bias, otherwise, the gate and the drain are easily damaged. When the grid is in a negative pressure state, the leakage voltage is firstly closed, and then the grid voltage is closed.
Therefore, there is still a difficult problem to realize the control of the power-down time sequence of the GaN amplifier tube in TDD time division multiplexing mode, and there is no solution at present.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a control circuit and signal transceiver of gaN amplifier tube for realize the control of power on, the power down chronogenesis of the gaN amplifier tube of TDD time division multiplexing mode.
In a first aspect, an embodiment of the present invention provides a control circuit of a GaN amplifier tube, for controlling a last GaN amplifier tube of a downlink transmission link of a time division duplex TDD communication system, including: a power supply module, a switching module, and a control module connected with the power supply module and the switching module,
the power supply module is used for providing a first voltage;
the switching module is used for providing a second voltage for controlling power supply to the grid electrode of the GaN amplifying tube;
and the control module is used for controlling the grid electrode to be electrified before the drain electrode when the GaN amplifying tube is conducted and controlling the grid electrode to be powered down after the drain electrode when the GaN amplifying tube is switched off according to the relation between the first voltage and the second voltage.
The embodiment of the utility model provides an among the control circuit of above-mentioned GaN amplifier tube, power module provides first voltage, switches the module, provides the second voltage of control to the power supply of GaN amplifier tube grid, and control module is according to the relation of first voltage and second voltage, and the grid is than the drain electrode earlier power-on when control GaN amplifier tube switches on to the grid falls the electricity behind the drain electrode when control GaN amplifier tube switches off, has realized that the GaN amplifier tube goes up the electricity, falls the control of electric chronogenesis.
In a possible implementation manner, in the control circuit of the above-mentioned GaN amplifier tube provided in the embodiments of the present invention, the control module includes: a first operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, and a first switch element,
the first resistor and the second resistor are connected in series between a first power supply and a collector of the first switching element, a source electrode of the GaN amplifying tube is connected with the first power supply, and a grid electrode of the GaN amplifying tube is connected with a middle node of the first resistor and the second resistor;
the third resistor and the fourth resistor are connected between the power supply module and the negative electrode of the power supply in series, the positive phase input end of the first operational amplifier is connected with the middle node of the third resistor and the fourth resistor, the reverse phase input end of the first operational amplifier is connected with the switching module, the output end of the first operational amplifier is connected with the base electrode of the first switching element, and the emitter electrode of the first switching element is connected with the negative electrode of the power supply.
In the control circuit of the GaN amplifier tube provided in the embodiments of the present invention, the third resistor and the fourth resistor are connected in series between the power supply module and the power supply negative electrode, and the positive phase input terminal of the first operational amplifier is connected to the middle node of the third resistor and the fourth resistor, so that the first voltage provided by the power supply module is divided and then input to the positive phase input terminal of the first operational amplifier, the negative phase input terminal of the first operational amplifier is connected to the switching module, i.e. the negative phase input terminal of the first operational amplifier is connected to the second voltage, the output terminal of the first operational amplifier is connected to the base of the first switch element, the emitter of the first switch element is connected to the power supply negative electrode, the collector of the first switch element is connected to the first power supply through the series structure of the first resistor and the second resistor, the gate of the GaN amplifier tube is connected to the middle node of the first resistor and the second, therefore, when the magnitude relation between the divided voltage value of the first voltage and the second voltage is changed, the output of the first operational amplifier is also changed, and the output of the first operational amplifier can control the on and off of the first switching element, so as to control the power-on and power-off of the grid electrode of the GaN amplifying tube.
In a possible implementation manner, in the control circuit of the above-mentioned GaN amplifier tube provided in the embodiments of the present invention, the control module further includes: the switching module comprises a fifth resistor, a sixth resistor and a first capacitor, wherein the fifth resistor is connected between the output end of the first operational amplifier and the base electrode of the first switching element, the sixth resistor is connected between the inverting input end of the first operational amplifier and the switching module, and the first capacitor is connected between the base electrode of the first switching element and the negative electrode of the power supply.
In a possible implementation manner, in the control circuit of the above-mentioned GaN amplifier tube provided in the embodiments of the present invention, the switching module includes: the middle nodes of the first branch and the second branch are connected with the control module, and the middle nodes of the first branch and the second branch are connected with the negative pole of the power supply through a second capacitor, wherein,
a first branch comprising: the second operational amplifier, the eighth resistor, the inductance component and the ninth resistor are connected in series, the third capacitor is connected between a first node and the negative electrode of a power supply, the fourth capacitor is connected between a second node and the negative electrode of the power supply, the first node is a connection node of the eighth resistor and the inductance component, the second node is a connection node of the ninth resistor and the inductance component, and one end of the ninth resistor is connected with the second branch circuit;
the positive phase input end of the second operational amplifier is connected with the negative electrode of the power supply through a seventh resistor, the output end of the second operational amplifier is connected with one end of an eighth resistor and is connected with the reverse phase input end of the second operational amplifier through a tenth resistor, and the reverse phase input end of the second operational amplifier is connected with a controller for controlling the GaN amplifier tube;
a second branch, comprising: the power supply comprises a phase inverter, a diode, an eleventh resistor, a twelfth resistor, a thirteenth resistor and a second switch element, wherein the drain electrode of the second switch element is connected with the first branch circuit, the source electrode of the second switch element is connected with a second power supply through the thirteenth resistor, the eleventh resistor and the twelfth resistor are connected between the grid electrode of the second switch element and the negative electrode of the power supply in series, the input end of the phase inverter is connected with a controller for controlling the mode switching of the TDD communication system, the output end of the phase inverter is connected with the middle node of the eleventh resistor and the twelfth resistor through the diode, and the anode of the diode is connected with the output end of the phase inverter.
In a possible implementation manner, in the control circuit of the above-mentioned GaN amplifier tube provided in the embodiments of the present invention, the power supply module includes: and the input end of the negative pressure conversion module is connected with the third power supply, and the output end of the negative pressure conversion module is connected with the control module.
In a possible implementation manner, in the control circuit of the above-mentioned GaN amplifier tube provided in the embodiments of the present invention, the drain electrode of the GaN amplifier tube is connected to the negative electrode of the power supply through a plurality of resistor assemblies connected in parallel.
In a second aspect, an embodiment of the present invention provides a signal transceiver, including: a downlink transmitting link, an uplink receiving link and a signal transceiver module, wherein the downlink transmitting link, the uplink receiving link and the signal transceiver module are connected through a circulator, the downlink transmitting link is connected with a first interface of the circulator, the signal transceiver module is connected with a second interface of the circulator, the uplink receiving link is connected with a third interface of the circulator, wherein,
the downlink transmission link comprises: a control circuit of the preceding stage amplifier tube, the push stage GaN amplifier tube, the final stage GaN amplifier tube and the GaN amplifier tube of any of the above embodiments, wherein the preceding stage amplifier tube, the push stage GaN amplifier tube and the final stage GaN amplifier tube are connected in series, the final stage GaN amplifier tube is connected with the first interface of the circulator, and the control circuit of the GaN amplifier tube is used for controlling the final stage GaN amplifier tube;
and the uplink receiving link comprises a selector switch and a Low Noise Amplifier (LNA) which are connected in series, and the selector switch is used for switching the working states of the downlink transmitting link and the uplink receiving link.
The embodiment of the utility model provides an above-mentioned signal transceiver, downlink transmission link during operation, the control circuit control of gaN amplifier tube last stage gaN amplifier tube switches on, change over switch disconnection, downlink signal transmits to the later stage after preceding stage amplifier tube amplifies and promotes a gaN amplifier tube and amplifies, reentry last stage gaN amplifier tube, the control circuit control of gaN amplifier tube last stage gaN amplifier tube switches on, the signal is through last stage gaN amplifier tube output back, through circulator first port input, circulator second port output to signal transceiver module; when the uplink receiving link works, the control circuit of the GaN amplifying tube controls the last-stage GaN amplifying tube to be turned off, the change-over switch is turned on, the uplink signal is output to the second port of the circulator from the signal receiving and transmitting module, is output from the third port of the circulator, enters the low-noise amplifier through the change-over switch, and is output by the low-noise amplifier after being amplified. Compared with the prior art, the mode switching of the TDD communication system is synchronous with the control circuit of the GaN amplifier tube, so that the GaN amplifier tube is protected.
In a possible implementation manner, an embodiment of the present invention provides a signal transceiver apparatus, where the apparatus further includes: a temperature sensor and a controller, wherein,
the temperature sensor is used for collecting the grid temperature of the final-stage GaN amplifying tube and sending the collected temperature value to the controller;
and the controller is used for adjusting the voltage of the grid electrode of the final-stage GaN amplifier according to the temperature value acquired by the temperature sensor and the corresponding relation between the prestored temperature value and the grid electrode voltage.
In a possible implementation manner, in the signal transceiver provided in an embodiment of the present invention, the final GaN amplifier tube is a PMOS tube or an NMOS tube.
In a possible implementation manner, in the signal transceiver device provided in an embodiment of the present invention, the final GaN amplifier tube includes one or more GaN amplifier tubes.
Drawings
Fig. 1 is a schematic structural diagram of a control circuit of a GaN amplifier tube according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a control module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a switching module according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a power supply module according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a signal transceiver according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, the embodiment of the present invention provides a control circuit of a GaN amplifier tube, including: the power supply device comprises a power supply module 10, a switching module 12 and a control module 11 connected with the power supply module 10 and the switching module 12, wherein the power supply module 10 is used for providing a first voltage; a switching module 12, configured to provide a second voltage for controlling power supply to the GaN amplifier tube gate; and the control module 11 is used for controlling the grid electrode to be electrified before the drain electrode when the GaN amplifying tube is conducted and controlling the grid electrode to be powered down after the drain electrode when the GaN amplifying tube is switched off according to the relation between the first voltage and the second voltage.
In specific implementation, if the first voltage provided by the power supply module 10 is greater than the second voltage provided by the switching module 12, the control module 11 controls the gate to be powered up before the drain when the GaN amplifier tube is turned on, and if the first voltage provided by the power supply module 10 is less than the second voltage provided by the switching module 12, the control module 11 controls the gate to be powered down before the drain when the GaN amplifier tube is turned off.
As shown in fig. 2, the control module 11 includes: a first resistor 201, a second resistor 202, a first switching element 203, a third resistor 204, a fourth resistor 205, and a first operational amplifier 206, wherein,
a first resistor 201 and a second resistor 202 are connected in series between a first power supply and a collector of the first switching element 203, a source of the GaN amplifier tube is connected with the first power supply, and a gate of the GaN amplifier tube is connected with a middle node of the first resistor 201 and the second resistor 202;
the third resistor 204 and the fourth resistor 205 are connected in series between the power supply module 10 and the negative electrode of the power supply, the non-inverting input terminal of the first operational amplifier 206 is connected to the middle node of the third resistor 204 and the fourth resistor 205, the inverting input terminal of the first operational amplifier 206 is connected to the switching module 12, the output terminal of the first operational amplifier 206 is connected to the base of the first switching element 203, and the emitter of the first switching element 203 is connected to the negative electrode of the power supply.
The first power source may be a +48V power source, and certainly, may also be a power source with other voltage values, which is not limited in the embodiment of the present invention.
Optionally, the control module 11 further includes a fifth resistor 207, a sixth resistor 208, and a first capacitor 209, where the fifth resistor 207 is connected between the output terminal of the first operational amplifier 206 and the base of the first switching element 203, the sixth resistor 208 is connected between the inverting input terminal of the first operational amplifier 206 and the switching module 12, and the first capacitor 209 is connected between the base of the first switching element 203 and the negative electrode of the power supply.
As shown in fig. 3, the switching module 12 includes: a first branch 3100, a second branch 3200 and a second capacitor 3300, an intermediate node of the first branch 3100 and the second branch 3200 is connected to the control module 11, and the intermediate node of the first branch 3100 and the second branch 3200 is connected to a negative electrode of a power supply through the second capacitor 3300, wherein,
a first branch 3100, comprising: a second operational amplifier 3101, a seventh resistor 3102, an eighth resistor 3103, an inductive element 3104, a ninth resistor 3105, a third capacitor 3106, a fourth capacitor 3107 and a tenth resistor 3108, wherein the non-inverting input terminal of the second operational amplifier 3101 is connected to the negative power supply terminal through the seventh resistor 3102, the second operational amplifier 3101, the eighth resistor 3103, the inductive element 3104 and the ninth resistor 3105 are connected in series, the third capacitor 3106 is connected between a first node a1 and the negative power supply terminal, the fourth capacitor 3107 is connected between a second node a2 and the negative power supply terminal, the first node a1 is the connection node between the eighth resistor 3103 and the inductive element 3104, the second node a2 is the connection node between the ninth resistor 3105 and the inductive element 3104, and one end of the ninth resistor 3105 is connected to the second branch 3200;
an output terminal of the second operational amplifier 3101 is connected to one terminal of an eighth resistor 3103 and to an inverting input terminal of the second operational amplifier 3101 through a tenth resistor 3108, and the inverting input terminal of the second operational amplifier 3101 is connected to a controller for controlling the GaN amplifier tube;
the second branch 3200 includes: an eleventh resistor 3201, a twelfth resistor 3202, a second switching element 3203, a thirteenth resistor 3204, an inverter 3205, and a diode 3206, the eleventh resistor 3201 and the twelfth resistor 3202 are connected in series between a gate of the second switching element 3203 and a negative power supply, a drain of the second switching element 3203 is connected to the first branch 3100, a source of the second switching element 3203 is connected to the second power supply through the thirteenth resistor 3204, an input terminal of the inverter 3205 is connected to a controller that controls mode switching of the TDD communication system, an output terminal of the inverter 3205 is connected to a middle node of the eleventh resistor 3201 and the twelfth resistor 3202 through the diode 3206, and an anode of the diode 3206 is connected to an output terminal of the inverter 3205.
It should be noted that the second power source may be a power source with a voltage of-5V, and certainly, in other embodiments of the present invention, the second power source may also be a power source with a voltage value of other values, which is not limited in the embodiments of the present invention.
As shown in fig. 4, the power supply module 10 includes: the input end of the negative pressure conversion module 401 is connected with a third power supply, or connected with a controller of the GaN amplifier tube, and the output end of the negative pressure conversion module 401 is connected with the control module 11.
Wherein, the third power can be the power that voltage is +5V, of course in other embodiments of the utility model, also can be the power that the magnitude of voltage is other values, the embodiment of the utility model does not limit to this.
In specific implementation, the power supply module 10 converts +5V voltage to-5V to provide negative voltage power bias for the GaN amplifier tube gate, the positive phase input terminal of the first operational amplifier 206 in the control module 11 is connected to the first voltage provided by the power supply module 10, and the third resistor 204 and the fourth resistor 205 perform voltage division threshold setting, where the threshold voltage is the normal operating gate voltage of the GaN amplifier tube, so as to ensure the normal operating stability and temperature compensation range of the GaN amplifier tube.
When the circuit is just powered on, the power-on time of the first power supply and the second power supply is short, the first power supply directly powers on the source electrode of the GaN amplifier tube in the control module 11, the second power supply directly powers on the source electrode of the second switch element 3203 in the switching module 12, and the controller for controlling the GaN amplifier tube needs software reset, data configuration and other processes after being powered on, so that time delay is generated.
When the circuit is powered on, the voltage at the positive phase input end of the first operational amplifier 206 is a set threshold voltage, the threshold voltage is obtained by dividing a first voltage output by the power supply module 10, the access voltage at the negative phase input end of the first operational amplifier 206 is a second voltage output by the switching module 12, and before the controller controlling the GaN amplifier tube outputs a control level, the second voltage is an uncertain voltage and is defaulted to 0V, so that the voltage value at the negative phase input end of the first operational amplifier 206 is greater than the voltage value at the positive phase input end, the first operational amplifier 206 outputs a low level, the first switching element 203 is turned off, the collector of the first switching element 203 is at a high level, the first resistor 201 and the second resistor 202 do not have a voltage dividing function, at this time, the gate of the GaN amplifier tube is not powered on, the GaN amplifier tube is not turned on, and the drain of the GaN amplifier tube is not.
After the controller controlling the GaN amplifier tube is reset, a negative voltage level is output, the voltage value of the inverting input terminal of the second operational amplifier 3101 in the switching module 12 is smaller than the voltage value of the non-inverting input terminal, and the output terminal of the second operational amplifier 3101 outputs a voltage of-5V.
In this case, if the TDD communication system is switched from the uplink mode to the downlink mode, the controller for switching the TDD communication system outputs a high level, the diode 3206 in the second branch 3200 in the switching module 12 is in a high impedance state, the second switching element 3202 is in an off state, the second voltage value provided by the switching module 12 is smaller than the first voltage value provided by the power supply module 10, the output end of the first operational amplifier 206 in the control module 11 outputs a high level, the first switching element 203 is in an on state, the first resistor 201 and the second resistor 202 have a voltage division function, so that the gate of the GaN amplifier tube is powered on, the negative voltage value is about-18V, the GaN amplifier tube is powered on, the first power supply supplies power to the drain of the GaN amplifier tube, and the downlink is powered on.
In this case, if the TDD communication system is switched from the downlink mode to the uplink mode, the controller for switching the TDD communication system outputs a low level, the diode 3206 in the second branch 3200 in the switching module 12 is in the low impedance state, the second switching element 3202 is in the on state, the second voltage value provided by the switching module 12 is greater than the first voltage value provided by the power supply module 10, the output end of the first operational amplifier 206 in the control module 11 outputs a low level, the first switching element 203 is turned off, the collector of the first switching element 203 is at a high level, the first resistor 201 and the second resistor 202 do not have a voltage division function, and the GaN amplifier tube is not turned on.
When the circuit is powered off, the power-off time of the first power supply, the power-off time of the second power supply and the power-off time of the third power supply are short, the source electrode and the drain electrode of the GaN amplifier tube in the control module 11 are directly powered off due to the power-off of the first power supply, the source electrode of the second switch element 3203 in the switching module 12 is directly powered off due to the power-off of the second power supply, and the controller for controlling the GaN amplifier tube is still in the power-off process after the power-off of the first power supply, the second power supply and the third power supply is finished because the power-off speed of the. In the process, the first operational amplifier 206 in the control module 11 is powered off first, the output end of the first operational amplifier outputs a low level, the first switch element 203 is powered off, the first resistor 201 and the second resistor 202 do not divide voltage, and the gate of the GaN amplifier tube is powered off.
Further, in the control circuit of the GaN amplifier tube provided by the embodiment of the present invention, the drain electrode of the GaN amplifier tube may be connected to the negative electrode of the power supply through a plurality of resistor assemblies connected in parallel. As shown in fig. 2, the drain of the GaN amplifier tube is connected in parallel between the fourteenth resistor 210, the fifteenth resistor 211 and the sixteenth resistor 212 and the negative electrode of the power supply.
Additionally, the embodiment of the utility model provides a still provide a signal transceiver, as shown in fig. 5, the embodiment of the utility model provides a signal transceiver, include: downlink transmission link 5100, uplink receiving link 5200 and signal transceiver module 5300, downlink transmission link 5100, uplink receiving link 5200 and signal transceiver module 5300 are connected through circulator 5400, downlink transmission link 5100 is connected with first interface 1 of circulator 5400, signal transceiver module 5300 is connected with second interface 2 of circulator 5400, and uplink receiving link 5200 is connected with third interface 3 of circulator 5400.
The downlink transmitting link 5100 includes: preceding stage amplifier tube 5101, push-stage GaN amplifier tube 5102, last stage GaN amplifier tube 5103 and the utility model discloses the control circuit 5104 of GaN amplifier tube that above-mentioned embodiment provided, preceding stage amplifier tube 5101, push-stage GaN amplifier tube 5102 and last stage GaN amplifier tube 5103 series connection, last stage GaN amplifier tube 5103 is connected with circulator 5400's first interface 1, and GaN amplifier tube's control circuit 5104 is used for controlling last stage GaN amplifier tube 5103.
The uplink 5200 includes a low noise amplifier LNA5202 and a switch 5201 connected in series, and the switch 5202 is used to switch the operation states of the downlink 5100 and the uplink 5200.
In specific implementation, when the controller for controlling the mode switching of the TDD communication system sends out a low level signal, controls the switch 5201 in the uplink receiving link 5200 to turn off, and sends out an opposite level signal to control the pre-stage amplifier 5101 in the downlink 5100 and the low noise amplifier 5201 in the uplink 5202, so that the devices in the downlink 5100 operate and the devices in the uplink 5200 do not operate, and at the same time, the controller for controlling the mode switching of the TDD communication system sends out a high level signal, controls the switching module 12 in the control circuit 5104 of the GaN amplifier, inputs a high level signal to the inverter 3205 in the switching module 12, the inverter 3205 converts the high level into a low level and inputs the low level signal to the diode 3206, the diode 3206 is in a high impedance state, the second switching element 3202 is in an off state, the second voltage value provided by the switching module 12 is smaller than the first voltage value provided by the power supply module 10, and the final stage GaN, the downlink is on.
The inverter 3205 has a clamp voltage on the rising or falling edge of the input level switch, and therefore, when the input level of the inverter 3205 is at 1.5V to 3.6V, the level of the output terminal of the inverter 3205 is unstable, the diode 3206 and the twelfth resistor 3202 are required to ensure stability of the control level of the second switching element 3203, meanwhile, the GaN amplifying tube in the TDD communication system requires the rising edge and the falling edge to meet the requirement of less than 2.5 mus for grid voltage switching, ensures the grid voltage to be smooth and stable, avoids self-oscillation, during the period of time when the second switching element 3203 turns off the gate voltage, the filtering energy storage network composed of the eighth resistor 3103, the inductive component 3104, the ninth resistor 3105, the third capacitor 3106 and the fourth capacitor 3107 outputs a voltage, to ensure that the voltage drop at the output terminal cannot be too large, and the voltage across the ninth resistor 3105 is required to be close to 0V, the value of the ninth resistor 3105 has a key effect on the mode switching of the TDD communication system. When the second switch element 3203 is turned off, the filtering energy storage network discharges in the TDD communication mode switching time through the ninth resistor 3105, so that the level of the filtering energy storage network is reduced, and in order to maintain the level of the filtering energy storage network stable, the value of the eighth resistor 3103 has a critical influence on the charge-discharge balance of the filtering energy storage network. Therefore, the resistance values of the eighth resistor 3103 and the ninth resistor 3105 may be arranged in advance according to the above requirements.
When a controller for controlling the mode switching of the TDD communication system sends out a high level signal, the switch 5201 in the uplink receiving chain 5200 is controlled to close, and sends out an opposite level signal to control the pre-amplifier 5101 in the downlink 5100 and the low noise amplifier 5201 in the uplink 5202, so that the devices in the downlink 5100 do not work, and the devices in the uplink 5200 work. Meanwhile, the controller controlling the mode switching of the TDD communication system sends a low level signal, controls the switching module 12 in the control circuit 5104 of the GaN amplifier tube, inputs a low level signal to the inverter 3205 in the switching module 12, the inverter 3205 converts the low level into a high level, the diode 3206 is in a low impedance state, the second switching element 3202 is in a closed state, the second voltage value provided by the switching module 12 is greater than the first voltage value provided by the power supply module 10, the last GaN amplifier tube is turned off, the downlink is turned off, and the uplink is turned on.
The controller for controlling the mode switching of the TDD communication system controls the switching of the working states of the uplink device and the downlink device by continuously and repeatedly switching the output level signal, thereby realizing the continuous switching of the communication mode of the uplink and the downlink and realizing the normal work of the TDD communication system.
Further, the signal transceiver device further includes: the temperature sensor 5500 is used for collecting the grid temperature of the final-stage GaN amplifying tube 5103 and sending the collected temperature value to the controller 5600; the controller 5600 is configured to adjust a voltage of the gate of the final GaN amplifier 5103 according to the temperature value collected by the temperature sensor 5500 and a correspondence between a pre-stored temperature value and a gate voltage.
During specific implementation, the variation relation of the grid voltage of the GaN amplifying tube along with the temperature is collected according to a high-low temperature test at a prototype stage, a temperature compensation curve is fitted, a program is written into a controller for controlling the GaN amplifying tube, the output level of the controller for controlling the GaN amplifying tube is determined by combining the fitted temperature compensation curve according to the temperature value detected by the temperature sensor 5500, and therefore the second voltage output by the switching module 12 is controlled, the function of automatically compensating the grid voltage of the GaN is achieved, wherein the controller for controlling the GaN amplifying tube can be an MCU.
Further, the final GaN amplifier tube 5103 may be a PMOS tube or an NMOS tube.
Further, the final GaN amplifier tube 5103 includes one or more GaN amplifier tubes, and the GaN amplifier tube control circuit 5104 may control one final GaN amplifier tube 5103 or may control a plurality of GaN amplifier tubes at the same time. In addition, it should be noted that the GaN amplifier tube control circuit 5104 can also control the push-stage GaN amplifier tube 5102 to be turned off and turned on at the same time.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A control circuit of a GaN amplifier tube is used for controlling a last GaN amplifier tube of a downlink transmission link of a time division multiplexing TDD communication system, and is characterized by comprising the following components: a power supply module, a switching module, and a control module connected with the power supply module and the switching module,
the power supply module is used for providing a first voltage;
the switching module is used for providing a second voltage for controlling power supply to the GaN amplifying tube grid;
the control module is used for controlling the grid electrode to be electrified before the drain electrode when the GaN amplifying tube is conducted according to the relation between the first voltage and the second voltage, and controlling the grid electrode to be powered off after the drain electrode when the GaN amplifying tube is switched off.
2. The circuit of claim 1, wherein the control module comprises: a first operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, and a first switch element,
the first resistor and the second resistor are connected in series between a first power supply and a collector of the first switching element, a source electrode of the GaN amplifying tube is connected with the first power supply, and a grid electrode of the GaN amplifying tube is connected with a middle node of the first resistor and the second resistor;
the third resistor and the fourth resistor are connected in series between the power supply module and the negative electrode of the power supply, the positive phase input end of the first operational amplifier is connected with the middle node of the third resistor and the fourth resistor, the negative phase input end of the first operational amplifier is connected with the switching module, the output end of the first operational amplifier is connected with the base electrode of the first switch element, and the emitting electrode of the first switch element is connected with the negative electrode of the power supply.
3. The circuit of claim 2, wherein the control module further comprises: the switching circuit comprises a fifth resistor, a sixth resistor and a first capacitor, wherein the fifth resistor is connected between the output end of the first operational amplifier and the base electrode of the first switching element, the sixth resistor is connected between the inverting input end of the first operational amplifier and the switching module, and the first capacitor is connected between the base electrode of the first switching element and the negative electrode of the power supply.
4. The circuit of claim 1, wherein the switching module comprises: a first branch and a second branch, wherein the intermediate node of the first branch and the second branch is connected with the control module, and the intermediate node of the first branch and the second branch is connected with the negative electrode of the power supply through a second capacitor, wherein,
the first branch, comprising: the second operational amplifier, the eighth resistor, the inductance component and the ninth resistor are connected in series, the third capacitor is connected between a first node and a power supply cathode, the fourth capacitor is connected between a second node and the power supply cathode, the first node is a connection node of the eighth resistor and the inductance component, the second node is a connection node of the ninth resistor and the inductance component, and one end of the ninth resistor is connected with the second branch circuit;
the positive-phase input end of the second operational amplifier is connected with the negative electrode of a power supply through the seventh resistor, the output end of the second operational amplifier is connected with one end of the eighth resistor and is connected with the negative-phase input end of the second operational amplifier through the tenth resistor, and the negative-phase input end of the second operational amplifier is connected with a controller for controlling the GaN amplifying tube;
the second branch circuit includes: the TDD communication system comprises an inverter, a diode, an eleventh resistor, a twelfth resistor, a thirteenth resistor and a second switch element, wherein the drain electrode of the second switch element is connected with the first branch circuit, the source electrode of the second switch element is connected with a second power supply through the thirteenth resistor, the eleventh resistor and the twelfth resistor are connected between the grid electrode of the second switch element and the negative electrode of the power supply in series, the input end of the inverter is connected with a controller for controlling the mode switching of the TDD communication system, the output end of the inverter is connected with the middle node of the eleventh resistor and the twelfth resistor through the diode, and the anode of the diode is connected with the output end of the inverter.
5. The circuit of claim 1, wherein the power module comprises: and the input end of the negative pressure conversion module is connected with a third power supply, and the output end of the negative pressure conversion module is connected with the control module.
6. The circuit of claim 1, wherein the drain of the GaN amplifier tube is connected to the negative supply electrode through a plurality of resistive components connected in parallel.
7. A signal transceiving apparatus, comprising: a downlink transmission link, an uplink receiving link and a signal transceiving module, wherein the downlink transmission link, the uplink receiving link and the signal transceiving module are connected through a circulator, the downlink transmission link is connected with a first interface of the circulator, the signal transceiving module is connected with a second interface of the circulator, the uplink receiving link is connected with a third interface of the circulator, wherein,
the downlink transmission link includes: a control circuit of a pre-stage amplifier tube, a push-stage GaN amplifier tube, a final-stage GaN amplifier tube, and the GaN amplifier tube of any of claims 1-6, the pre-stage amplifier tube, the push-stage GaN amplifier tube, and the final-stage GaN amplifier tube being connected in series, the final-stage GaN amplifier tube being connected to the first interface of the circulator, the control circuit of the GaN amplifier tube being for controlling the final-stage GaN amplifier tube;
the uplink receiving link comprises a selector switch and a Low Noise Amplifier (LNA) which are connected in series, and the selector switch is used for switching the working states of the downlink transmitting link and the uplink receiving link.
8. The apparatus of claim 7, further comprising: a temperature sensor and a controller, wherein,
the temperature sensor is used for collecting the grid temperature of the final GaN amplifier tube and sending the collected temperature value to the controller;
and the controller is used for adjusting the voltage of the grid electrode of the final-stage GaN amplifier according to the temperature value acquired by the temperature sensor and the corresponding relation between the prestored temperature value and the grid electrode voltage.
9. The device of claim 7, wherein the final GaN amplifier tube is a PMOS tube or an NMOS tube.
10. The apparatus of claim 7, wherein said final GaN amplifier tube comprises one or more GaN amplifier tubes.
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| CN201921014522.1U CN209949056U (en) | 2019-06-28 | 2019-06-28 | Control circuit and signal receiving and transmitting device of GaN amplifier tube |
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| CN201921014522.1U CN209949056U (en) | 2019-06-28 | 2019-06-28 | Control circuit and signal receiving and transmitting device of GaN amplifier tube |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190819A (en) * | 2019-06-28 | 2019-08-30 | 京信通信系统（中国）有限公司 | The control circuit and voltage of GaN amplifier tube adjust and signal receiving/transmission device |
| CN114070336A (en) * | 2021-10-25 | 2022-02-18 | 中国电子科技集团公司第二十九研究所 | Ultra-wideband TR (transmitter-receiver) component high-efficiency low-harmonic transmission circuit and implementation method |
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2019
- 2019-06-28 CN CN201921014522.1U patent/CN209949056U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190819A (en) * | 2019-06-28 | 2019-08-30 | 京信通信系统（中国）有限公司 | The control circuit and voltage of GaN amplifier tube adjust and signal receiving/transmission device |
| CN114070336A (en) * | 2021-10-25 | 2022-02-18 | 中国电子科技集团公司第二十九研究所 | Ultra-wideband TR (transmitter-receiver) component high-efficiency low-harmonic transmission circuit and implementation method |
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Effective date of registration: 20200107 Address after: 510663 No. 10, Shenzhou Road, Science City, Guangzhou, economic and Technological Development Zone, Huangpu District, Guangzhou, Guangdong Province Patentee after: Jingxin Communication System (China) Co., Ltd. Address before: 510663 Shenzhou Road, Guangzhou Science City, Guangzhou economic and Technological Development Zone, Guangdong, 10 Co-patentee before: Jingxin Communication System (Guangzhou) Co., Ltd. Patentee before: Jingxin Communication System (China) Co., Ltd. Co-patentee before: Jingxin Communication Technology (Guangzhou) Co., Ltd. Co-patentee before: TIANJIN COMBA TELECOM SYSTEMS CO., LTD. |
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Address after: 510663 No.10, Shenzhou Road, Guangzhou Science City, economic and Technological Development Zone, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Jingxin Network System Co.,Ltd. Address before: 510663 No.10, Shenzhou Road, Guangzhou Science City, economic and Technological Development Zone, Huangpu District, Guangzhou City, Guangdong Province Patentee before: Comba Telecom System (China) Ltd. |