CN218674824U - Oxide film electric signal acquisition module suitable for high and low temperature working environment - Google Patents
Oxide film electric signal acquisition module suitable for high and low temperature working environment Download PDFInfo
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- CN218674824U CN218674824U CN202222625177.3U CN202222625177U CN218674824U CN 218674824 U CN218674824 U CN 218674824U CN 202222625177 U CN202222625177 U CN 202222625177U CN 218674824 U CN218674824 U CN 218674824U
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Abstract
The utility model belongs to the technical field of semiconductor material, especially, an oxide film electricity signal acquisition module suitable for high low temperature operational environment. The utility model comprises a top plate and a bottom plate which are connected and fixed through a connecting piece, wherein the top plate is provided with interdigital electrodes, and the integration surface of the interdigital electrodes is integrated with a heating wire; and the bottom plate is provided with a refrigerating sheet for refrigerating the interdigital electrode, and the refrigerating sheet is in contact with the interdigital electrode. The utility model discloses not only integrated heating module, utilized the semiconductor refrigeration piece to provide a microthermal environment simultaneously, this module small in size, portable simultaneously.
Description
Technical Field
The utility model belongs to the technical field of semiconductor material, especially, relate to an oxide film signal of telecommunication collection module suitable for high low temperature operational environment.
Background
At present, a sensor which realizes the functions of detection, analysis, monitoring, alarm and the like by utilizing the characteristic that the resistance or work function (resistance, capacitance, potential or frequency) changes when a semiconductor oxide film material is in contact with gas is widely applied, the semiconductor oxide film material is required to be in contact with the gas to change under the condition that the semiconductor material needs to be heated or cooled to a certain temperature, most of the current researches are only limited to the aspect of heating, the heating wire is used for heating through the outside, the semiconductor material cannot be directly cooled, the external equipment is often required to cool the semiconductor material, and therefore an electric signal acquisition module which can provide a high-temperature and low-temperature working environment needs to be designed.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects in the prior art, the utility model provides an oxide film electricity signal acquisition module suitable for high low temperature operational environment for this reason. The utility model discloses not only integrated heating module utilizes the semiconductor refrigeration piece to provide a microthermal environment simultaneously, and this module small in size, portable simultaneously.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
an oxide film electric signal acquisition module suitable for a high-temperature and low-temperature working environment comprises a top plate and a bottom plate, wherein the top plate and the bottom plate are fixedly connected through a connecting piece, interdigital electrodes are arranged on the top plate, and heating wires are integrated on the integration surface of the interdigital electrodes; and the bottom plate is provided with a refrigerating sheet for refrigerating the interdigital electrode, and the refrigerating sheet is in contact with the interdigital electrode.
Preferably, a plurality of cylindrical electrodes are further mounted on the top plate, and the plurality of cylindrical electrodes are all electrically connected with the interdigital electrodes.
Preferably, the top plate is provided with a through groove matched with the shape of the interdigital electrode, and the interdigital electrode is arranged in the through groove; and still be equipped with the first recess with cylindrical electrode shape looks adaptation on the roof, cylindrical electrode installs in first recess.
Preferably, four cylindrical electrodes and four first grooves are arranged, wherein two adjacent cylindrical electrodes are connected with two electrodes of the heating wire, and the other two adjacent cylindrical electrodes are electrically connected with the electrodes on the non-integration surface of the interdigital electrode.
Preferably, four first recess distributes in the week side that leads to the groove, and first recess comprises cylindrical recess and rectangular shape recess, and the both ends of rectangular shape recess distribute the cylindrical recess of intercommunication and lead to the groove, and cylindrical electrode installs in cylindrical recess, and cylindrical electrode's lead wire is arranged in the rectangular shape recess.
Preferably, a second groove is formed in the bottom plate, the refrigerating sheet is installed in the second groove, and the second groove and the through groove are located on the same vertical face.
Preferably, the refrigerating piece is a semiconductor refrigerating piece.
Preferably, the top plate is detachably connected with the bottom plate; the connecting piece is a fixing bolt, a through hole is formed in the top plate, a threaded hole matched with the through hole in position is formed in the bottom plate, and the fixing bolt penetrates through the through hole and is in threaded connection with the threaded hole.
The utility model has the advantages that:
(1) The utility model discloses the semiconductor refrigeration piece that sets up and the heater strip that has integrateed in interdigital electrode's bottom, at the semiconductor material test requirement to difference, not only can carry out the electric signal collection under the high temperature environment, also can carry out the electric signal collection of low temperature environment, enlarged the application scope of module, and the utility model discloses a heater strip has been integrated to the interdigital electrode back, not only utilizes the heater strip to realize the heating function, and has realized the integrated design for module small in size, portable; meanwhile, the semiconductor refrigerating piece is used for refrigerating, and is low in cost and convenient to use.
(2) Because the length and the flexibility of the electrode wire are limited, two adjacent cylindrical electrodes are arranged to be connected with the surface of the interdigital electrode for measuring electric signals, and the other two adjacent cylindrical electrodes are connected with two electrodes of the heating wire integrated on the back of the interdigital electrode, so that the heating wire works after being powered on.
(3) The middle top plate and the bottom plate of the utility model are detachably connected, which is convenient for the installation and the disassembly of the top plate and the bottom plate; and the first groove is arranged on the periphery of the through groove, so that the cylindrical electrode and the interdigital electrode can be conveniently connected.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the present invention.
Fig. 3 is a schematic view of the top plate structure of the present invention.
Fig. 4 is a schematic view of the bottom plate structure of the present invention.
Fig. 5 is the schematic view of the structure of the refrigerating sheet of the present invention.
Fig. 6 is a schematic structural diagram of the front side of the interdigital electrode of the present invention.
Fig. 7 is a schematic diagram of the structure of the back surface of the interdigital electrode of the present invention.
Fig. 8 is a schematic view of the cylindrical electrode structure of the present invention.
The notations in the figures have the following meanings:
1-top plate, 11-through groove, 12-first groove, 13-through hole, 2-bottom plate, 21-second groove, 22-threaded hole, 3-interdigital electrode, 4-cylindrical electrode, 5-refrigeration piece and 6-fixing bolt.
Detailed Description
As shown in fig. 1-8, an oxide thin film electrical signal acquisition module suitable for high and low temperature working environment is composed of a top plate 1 and a bottom plate 2, wherein an interdigital electrode 3 is mounted on the top plate 1, and a heating wire is integrated on an integration surface of the interdigital electrode 3, and can heat the interdigital electrode 3, and the temperature of the interdigital electrode can reach 400 ℃, so that the acquisition module is suitable for high temperature working environment; install refrigeration piece 5 (semiconductor refrigeration piece) on bottom plate 2, and refrigeration piece 5 and the one side direct contact that interdigital electrode 3 integrated have the heater strip, carry out the cooling for interdigital electrode 3 through heat-conducting mode for this collection module is applicable to low temperature operational environment, and refrigeration piece 5 also can support interdigital electrode 3. The interdigital electrode 3 is made by brushing a layer of gold or platinum on the surface of a substrate such as a silicon wafer or quartz.
Specifically, the top plate 1 is detachably connected with the bottom plate 2; roof 1 is equipped with a plurality of through-holes 13 all around, and bottom plate 2 is equipped with a plurality of screw holes 22 all around, and fixing bolt 6 runs through-hole 13 and screw hole 22 threaded connection, the installation and the dismantlement of roof 1 and bottom plate 2 of being convenient for.
Further, as shown in fig. 3, four cylindrical electrodes 4 are further mounted on the top plate 1, wherein two adjacent cylindrical electrodes 4 are connected to two electrodes on the surface of the interdigital electrode 3 for measuring electrical signals, and the other two cylindrical electrodes 4 are connected to two electrodes on the heating wire on the back of the interdigital electrode 3, so that the heating wire is powered on to operate.
Furthermore, a through groove 11 is formed in the middle of the top plate 1, and the interdigital electrode 3 is arranged in the through groove 11; the circumference of the through groove 11 is respectively connected with a strip-shaped groove, the other end of the strip-shaped groove is connected with a cylindrical groove, a first groove 12 is formed by the strip-shaped groove and the cylindrical groove, the cylindrical electrode 4 is arranged in the cylindrical groove, and the lead of the cylindrical electrode 4 is arranged in the strip-shaped groove.
As shown in fig. 4, the middle of the bottom plate 2 is provided with a second groove 21, the refrigeration sheet 5 is installed in the second groove 21, and the second groove 21 and the through hole 13 are located on the same vertical plane.
The operation of the device is described in detail below with reference to the drawings in the examples.
Firstly, coating a semiconductor material (oxide film) to be tested on the surface (non-integrated heating wire surface) of an interdigital electrode 3;
secondly, sequentially connecting four electrodes on the front and back surfaces of the interdigital electrode 3 with the cylindrical electrode 4, simultaneously placing the interdigital electrode 3 into the middle square through groove 11, and then connecting the four cylindrical electrodes 4 and two electrodes of the semiconductor refrigerating sheet 5 with the electric signal acquisition device and the source meter;
and thirdly, according to the environment temperature required by actual test, the semiconductor material to be tested reaches the required temperature by utilizing the heating wire or the semiconductor refrigerating sheet 5 integrated on the back surface of the interdigital electrode 3 to acquire the electrical signal of the semiconductor material.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, and all modifications, equivalents, improvements and the like that are made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (8)
1. The oxide film electric signal acquisition module suitable for high and low temperature working environment is characterized by comprising a top plate (1) and a bottom plate (2), wherein the top plate (1) and the bottom plate (2) are fixedly connected through a connecting piece, an interdigital electrode (3) is installed on the top plate (1), and a heating wire is integrated on an integration surface of the interdigital electrode (3); and the bottom plate (2) is provided with a refrigerating sheet (5) for refrigerating the interdigital electrode (3), and the refrigerating sheet (5) is in contact with the interdigital electrode (3).
2. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 1, characterized in that: the top plate (1) is further provided with a plurality of cylindrical electrodes (4), and the cylindrical electrodes (4) are all electrically connected with the interdigital electrodes (3).
3. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 2, characterized in that: a through groove (11) matched with the interdigital electrode (3) in shape is formed in the top plate (1), and the interdigital electrode (3) is arranged in the through groove (11); and the top plate (1) is also provided with a first groove (12) matched with the shape of the cylindrical electrode (4), and the cylindrical electrode (4) is arranged in the first groove (12).
4. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 3, wherein: the cylindrical electrodes (4) and the first grooves (12) are four in number, two adjacent cylindrical electrodes (4) are connected with two electrodes of the heating wire, and the other two adjacent cylindrical electrodes (4) are electrically connected with the electrodes on the non-integrated surface of the interdigital electrode (3).
5. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 4, characterized in that: four first recess (12) distribute in all sides that lead to groove (11), first recess (12) comprise cylindrical recess and rectangular shape recess, the both ends of rectangular shape recess distribute the cylindrical recess of intercommunication and lead to groove (11), cylindrical electrode (4) are installed in cylindrical recess, the lead wire of cylindrical electrode (4) is arranged in the rectangular shape recess.
6. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 1, wherein: the refrigerator is characterized in that a second groove (21) is formed in the bottom plate (2), the refrigerating piece (5) is installed in the second groove (21), and the second groove (21) and the through groove (11) are located on the same vertical surface.
7. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 1, wherein: the refrigerating sheet (5) is a semiconductor refrigerating sheet.
8. The oxide thin film electrical signal acquisition module suitable for high and low temperature working environment according to claim 1, characterized in that: the top plate (1) is detachably connected with the bottom plate (2); the connecting piece is fixing bolt (6), and is equipped with through-hole (13) on roof (1), be equipped with on bottom plate (2) with screw hole (22) of the position looks adaptation of through-hole (13), fixing bolt (6) run through-hole (13) and screw hole (22) threaded connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222625177.3U CN218674824U (en) | 2022-09-30 | 2022-09-30 | Oxide film electric signal acquisition module suitable for high and low temperature working environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222625177.3U CN218674824U (en) | 2022-09-30 | 2022-09-30 | Oxide film electric signal acquisition module suitable for high and low temperature working environment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218674824U true CN218674824U (en) | 2023-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222625177.3U Active CN218674824U (en) | 2022-09-30 | 2022-09-30 | Oxide film electric signal acquisition module suitable for high and low temperature working environment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218674824U (en) |
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2022
- 2022-09-30 CN CN202222625177.3U patent/CN218674824U/en active Active
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