CN210775735U - Matrix type IGBT temperature measurement system - Google Patents
Matrix type IGBT temperature measurement system Download PDFInfo
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- CN210775735U CN210775735U CN201921515269.8U CN201921515269U CN210775735U CN 210775735 U CN210775735 U CN 210775735U CN 201921515269 U CN201921515269 U CN 201921515269U CN 210775735 U CN210775735 U CN 210775735U
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Abstract
A matrix type IGBT temperature measurement system relates to the technical field of IGBT temperature measurement. Including IGBT power module, MCU module, be used for IGBT power module temperature measurement's temperature sensor U1 and the temperature voltage conversion circuit who is connected with temperature sensor U1, install radiator fan on the IGBT power module, power module is connected with temperature sensor, temperature voltage conversion circuit, MCU module, radiator fan respectively, and radiator fan is connected through the MCU module to temperature voltage conversion circuit's signal output part. The utility model discloses matrix IGBT's temperature sensor uses quantity to reduce half, can reduce cost advantage, need not detect every IGBT, and the temperature that only needs to detect an IGBT switch just can reflect the temperature of IGBT circuit subassembly.
Description
Technical Field
The utility model relates to a IGBT temperature measurement technical field specifically is a matrix IGBT temperature measurement system.
Background
The IGBT is widely applied to a high-power current transmission technology at present, a junction temperature control technology is particularly important, some existing products carry out temperature control by detecting environmental temperature changes at present, the difference between the actual temperature of the IGBT and the environmental temperature is large, the defect is obvious, and when the IBGT temperature is high and reaches the junction temperature critical value, the environmental temperature is changed a little, so that the test temperature is inaccurate.
In the circuit of matrix type IGBT, there is the unbalanced problem of flow equalization, leads to the IGBT temperature actual height to differentiate, and the symmetry of circuit also can arouse the inconsistent problem of temperature, and some current designs use temperature sensor to detect only that the temperature of other passageways that come the aassessment is inaccurate all the way, have certain risk, this some defects of current design also.
But if every IGBT of every passageway all increases temperature sensor and tests and can the system resource bring certain waste, this patent application mainly improves the defect of the temperature sensor of above-mentioned several kinds of condition, considers comprehensively that cost advantage and measurement temperature accuracy, optimizes a scheme of matrix type IGBT temperature measurement circuit.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a matrix IGBT temperature measurement system only need detect one of them IGBT switch on every bar heat sink, can reflect this IGBT circuit subassembly generate heat and the temperature situation, solves above defect and only relies on ambient temperature to judge the difference of IGBT temperature.
The technical scheme for realizing the purpose is as follows: the utility model provides a matrix IGBT temperature measurement system which characterized in that: including IGBT power module, MCU module, be used for IGBT power module temperature measurement's temperature sensor U1 and the temperature voltage conversion circuit who is connected with temperature sensor U1, install radiator fan on the IGBT power module, power module is connected with temperature sensor, temperature voltage conversion circuit, MCU module, radiator fan respectively, and radiator fan is connected through the MCU module to temperature voltage conversion circuit's signal output part.
Further, the temperature-voltage conversion circuit comprises capacitors C3, C4, C5, an operational amplifier U2A, resistors R1, R2, a pin 2 of the temperature sensor U1 is connected to a pin 3 of the operational amplifier U2A, one ends of the capacitors C3, C4 are grounded, the other ends of the capacitors are connected to the power module and a pin 3 of the operational amplifier U2A, the capacitor C5 and the resistor R1 are respectively connected in parallel between a pin 1 and a pin 2 of the operational amplifier U2A, one end of the resistor R2 is connected to a pin 1 of the operational amplifier U2A, the other end of the resistor R2 outputs the voltage signal Vout and is connected to one end of the capacitor C6, and the other end of the capacitor C6 is grounded.
Furthermore, the power module is connected with the temperature sensor through capacitors C1 and C2, one ends of the capacitors C1 and C2 are connected with pin 1 of the power module and the temperature sensor U1, and the other ends are respectively connected with pin 3 of the temperature sensor U1 and grounded.
Furthermore, the IGBT power module comprises an IGBT shell, one or more strip-shaped heat dissipation sheet mounting holes which are arranged side by side at intervals are formed in the IGBT shell, a same IGBT circuit assembly is mounted in each strip-shaped heat dissipation sheet mounting hole, each IGBT circuit assembly comprises a strip-shaped heat dissipation sheet connected in each strip-shaped heat dissipation sheet mounting hole, first IGBT switches and second IGBT switches which are arranged along the length direction at intervals are mounted on the inner side end faces of the strip-shaped heat dissipation sheets respectively, the first IGBT switches and the second IGBT switches on the strip-shaped heat dissipation sheets are distributed in a matrix mode, c poles of the first IGBT switches on the strip-shaped heat dissipation sheets are used as input positive poles respectively, e poles of the second IGBT switches are used as input negative poles respectively, e poles of the first IGBT switches are connected in parallel, and c poles of the second IGBT switches are connected in parallel to each other and used as output ends of;
and each strip-shaped fan heat piece close to the e pole of the first IGBT switch or the e pole of the second IGBT switch is provided with a temperature sensor, and each temperature sensor is correspondingly connected with a temperature-voltage conversion circuit.
Further, the distance between the temperature sensor and the e pole of the first IGBT switch or the e pole of the second IGBT switch is 1.5-2.5 mm.
Further, when a plurality of IGBT circuit components are arranged, a multiplexer is connected between the temperature-voltage conversion circuit and the MCU module.
Furthermore, a heat radiation fan is installed on one side or/and two sides of the IGBT shell, and the wind direction of the heat radiation fan is perpendicular to the length direction of the strip-shaped heat radiation fins.
Further, the first IGBT switch and the second IGBT switch are distributed and installed on the strip-shaped heat dissipation plate through ceramic insulation gaskets.
Furthermore, the temperature sensor is mounted on the strip-shaped radiating fin through a copper substrate after being pasted with the chip.
Furthermore, heat conducting glue is respectively arranged between the inner surface of the strip-shaped radiating fin, the first IGBT switch, the second IGBT switch and the ceramic insulating gasket.
The utility model has the advantages that:
matrix IGBT's temperature sensor uses quantity to have reduced half, can reduce cost advantage, need not detect every IGBT, and the temperature that only needs to detect an IGBT switch just can reflect IGBT circuit assembly.
The rotating speed of the fan is controlled through temperature feedback, so that energy loss can be reduced, and the use range of the actual temperature is more flexible. The feedback result is processed by the MCU to control the air flow, a new thermal resistance balance is achieved, the temperature also reflects the actual shell temperature of the IGBT, real-time monitoring can be achieved, and the detection accuracy is ensured.
Compared with the existing environment temperature, the accuracy is very high, the measurement position is greatly different from the existing detection mode, and the new application technology has higher requirements on the installation of the IGBT and the installation of the temperature sensor and has clear requirements on the thermal resistance of materials.
Drawings
FIG. 1 is a schematic block diagram of the present invention;
FIG. 2 is a circuit diagram of a temperature-voltage conversion circuit;
FIG. 3 is a schematic structural diagram of an IGBT power module;
FIG. 4 is a side view of FIG. 3;
FIG. 5 is a connection circuit diagram of a single IGBT circuit assembly;
fig. 6 is a connection circuit diagram of a plurality of IGBT circuit components.
Detailed Description
As shown in fig. 1-6, the utility model discloses a temperature voltage conversion circuit 5 that IGBT power module 1, power module 2, MCU module 3, multiplexer 4, the temperature sensor U1 that is used for IGBT power module 1 temperature measurement and is connected with temperature sensor U1, multiplexer 4's model is CD74HCT 4051.
The first IGBT switch S1 and the second IGBT switch S2 are distributed and installed on the corresponding strip-shaped radiating fin 1.3 through a ceramic insulating gasket 1.5, and the first IGBT switch S1 and the second IGBT switch S2 on the strip-shaped radiating fin 1.3 are distributed in a matrix form.
Heat conducting glue 1.6 is respectively arranged between the inner surface of the strip-shaped radiating fin 1.3, the first IGBT switch S1, the second IGBT switch S2 and the ceramic insulating gasket 1.5, the heat resistance of the heat conducting glue 1.6 is required to be smaller than the heat resistance of junction temperature on the first IGBT switch S1 and the second IGBT switch S2, the heat conducting glue 1.6 is coated on the inner surface of the strip-shaped radiating fin 1.3, the contact area between the strip-shaped radiating fin and the first IGBT switch S1 and the contact area between the strip-shaped radiating fin and the second IGBT switch S2 can be improved, the radiating area is increased, the heat resistance is reduced, and therefore heat can be taken away by the heat of the strip-shaped radiating.
The c poles of the first IGBT switch S1 and the e poles of the second IGBT switch S2 on the strip-shaped radiating fin 1.3 are respectively used as input positive poles, the e poles of the first IGBT switch S1 and the c poles of the second IGBT switch S2 are mutually connected in parallel and are used as output ends of the IGBT power module 1, the strip-shaped fan heating fins 1.3 close to the e poles of the first IGBT switch S1 or the e poles of the second IGBT switch S2 are respectively provided with a temperature sensor U1, the distance between the temperature sensor U1 and the e poles of the first IGBT switch S1 and the second IGBT switch S2 is 1.5-2.5 mm, because the temperature of the e feet of the first IGBT switch S1 and the second IGBT switch S2 is higher than that of the first IGBT switch S1 and the second IGBT switch S2, the temperature of the e feet is circumferentially other positions of the first IGBT switch S1 and the second IGBT switch S2, the temperature sensor U1 is more meaningful and the junction temperature is more accurately measured when the temperature of the first IGBT switch S1 or the second IGBT switch S2 is close to the IGBT switch S2, making the test variation smaller.
The models of the first IGBT switch S1 and the second IGBT switch S2 on the strip-shaped cooling fin 1.3 are IKQ40N120CH3, the electric connection wires are consistent, the consistency of the overcurrent capacity of the circuit is ensured, and the temperature error caused by the inconsistency of heat is reduced.
Every temperature sensor U1 corresponds and is connected with a temperature voltage conversion circuit 5, and power module 2 is provided with 5V, 3.3V, 12V output, and wherein 5V output connection temperature sensor U1, temperature voltage conversion circuit 5, 3.3V output connection MCU module 3, 12V output connection radiator fan 1.4.
When the IGBT power module 1 is provided with only one IGBT circuit assembly 1.7, the signal output end of the temperature-voltage conversion circuit 5 is directly connected to the MCU module 3, and the MCU module 3 is connected to the control end of the cooling fan 1.4.
When the IGBT power module 1 is only provided with a plurality of IGBT circuit assemblies 1.7, the signal output end of the temperature-voltage conversion circuit 5 is directly connected with the MCU module 3 through the multiplexer 4, and the MCU module 3 is connected with the control end of the cooling fan 1.4.
The temperature-voltage conversion circuit 5 comprises capacitors C3, C4, C5, an operational amplifier U2A, resistors R1 and R2, wherein the model of the operational amplifier U2A is LM358, a pin 2 of a temperature sensor U1 is connected with a pin 3 of the operational amplifier U2A, one ends of the capacitors C3 and C4 are grounded, the other end of the capacitors C5 and R1 are respectively connected between a pin 1 and a pin 2 of the operational amplifier in parallel, one end of the resistor R2 is connected with the pin 1 of the operational amplifier, the other end of the resistor R2 outputs a voltage signal Vout and is connected with one end of the capacitor C6, and the other end of the capacitor C6 is grounded.
The 2-pin output analog voltage of the temperature sensor U1 is directly transmitted to the 3-pin of the operational amplifier U2A, the resistor R1 and the 2-pin and 1-pin of the operational amplifier U2A form an emitter follower circuit, the operational amplifier gain is 1, the resistor R2 and the capacitor C6 form a low-pass filter, and meanwhile, the ringing effect of the operational amplifier is relieved. The capacitors C3 and C4 perform high-frequency filtering, so that power supply interference of noise to the operational amplifier U2A is reduced, and power supply ripples are reduced.
The power module 2 is connected with the temperature sensor U1 through capacitors C1 and C2, one ends of the capacitors C1 and C2 are connected with the 5V output of the power module 2 and the pin 1 of the temperature sensor U1, and the other ends of the capacitors C1 and C2 are respectively connected with the pin 3 of the temperature sensor U1 and are grounded.
The capacitors C1 and C2 perform high-frequency filtering to reduce the power supply interference of noise to the temperature sensor U1.
As a further illustration of the present embodiment, the temperature sensor U1 is a TMP235, and is mounted on the strip heat sink 1.3 after being mounted on a copper substrate, and the metal is very fast in heat conduction to timely reflect the temperature change, and the temperature sensor U1 is integrated inside the chip package SC70 and outputs an analog linear voltage after receiving the temperature change. After the voltage passes through the operational amplifier U2A, impedance transformation isolation processing is carried out, the gain with the amplification factor of 1 is set, the analog linear voltage is converted through high input impedance and low output impedance, the influence of the impedance of the circuit on the temperature measurement precision is reduced, the large driving capability is improved, and the voltage and temperature corresponding relation is obtained through the conversion of the MCU module 3. The concrete relationship is shown in table 1 and table 2.
TABLE 1 corresponding relationship between sensor output voltage and temperature
TABLE 2 ambient temperature curve corresponding to output voltage
Wherein, TAThe temperature at the switching pin or junction temperature of the IGBT; vOUTSimulating linear voltage output; vOFFSIs a linear voltage range offset; t isCIs the sensor temperature sensitivity; t isINFLAre different temperature range nodes.
Table 1 the actual measured temperature range TA has three phases: a working range of-40 to-100 ℃, 100 ℃ and 125 ℃ and 150 ℃ and corresponding VOFFSRange value, TCValue, TINFLValue VOUT，A value; table 2 the relationship between the output temperature and the output voltage is basically a straight line, having a higher linear relationship, ensuring good accuracy for the measurement.
Using the formula: t isA= (VOUT-VOFFS)/TC+TINFLCan calculate TA，TAThe temperature generated by each IGBT circuit component 1.7 after the current flows is reflected, an accurate temperature value is obtained, and the temperature value is processed by the MCU.
The utility model discloses a theory of operation: the MCU module 3 polls the temperature detected by the temperature sensor U1 in each IGBT circuit module 1.7 through the multiplexer 4, and records the temperatures, with a real-time interval of 1S, for time-sharing inquiry.
If there is a current imbalance of one IGBT circuit assembly 1.7, which causes a current with different magnitude and different heat generation amount, for example, the detected temperature of the first IGBT circuit assembly 1.7 is T1, the detected temperature of the second IGBT circuit assembly 1.7 is T2, the detected temperature of the nth IGBT circuit assembly is TN, Δ T12= T1-T2, Δ T13= T1-T3, Δ T1N = T1-TN, if the maximum value of Δ T is the maximum temperature difference corresponding to the channel, the current imbalance of the path is the largest, the maximum current imbalance is responded, the maximum current imbalance is fed back to the charging end through external communication such as CAN communication, and the charging end readjusts the constant current values to equalize the current of the IGBT circuits.
If the detected temperature of any IGBT circuit assembly 1.7 rises to 40 ℃, the speed-regulating fan 1.4 can be started, so that air flows rapidly, the thermal resistance is reduced, the temperature of the IGBT junction temperature is lower, the temperature is continuously monitored and fed back to the MCU module 3. If the temperature rises to 85 ℃, the duty ratio is increased through the MCU module 3, the running speed of the cooling fan 1.4 is increased, the temperature of the IGBT circuit assembly 1.7 is rapidly reduced and continuously exceeds the safety threshold temperature by 120 ℃, signals are sent to a charging end through external communication such as CAN communication, the required current is reduced or reduced, the safety is ensured, the junction temperature is in a normal safety range, the operation of the IGBT in a proper temperature range CAN be effectively evaluated, and the tendency to safety and reliability is ensured.
Claims (10)
1. The utility model provides a matrix IGBT temperature measurement system which characterized in that: including IGBT power module, MCU module, be used for IGBT power module temperature measurement's temperature sensor U1 and the temperature voltage conversion circuit who is connected with temperature sensor U1, install radiator fan on the IGBT power module, power module is connected with temperature sensor, temperature voltage conversion circuit, MCU module, radiator fan respectively, and radiator fan is connected through the MCU module to temperature voltage conversion circuit's signal output part.
2. The matrix IGBT temperature measurement system according to claim 1, characterized in that: the temperature-voltage conversion circuit comprises capacitors C3, C4, C5, an operational amplifier U2A, resistors R1 and R2, wherein a pin 2 of the temperature sensor U1 is connected with a pin 3 of the operational amplifier U2A, one ends of the capacitors C3 and C4 are grounded, the other ends of the capacitors C3 and C4 are connected with a pin 3 of the power module and the operational amplifier U2A, a capacitor C5 and a resistor R1 are respectively connected between a pin 1 and a pin 2 of the operational amplifier U2A in parallel, one end of a resistor R2 is connected with a pin 1 of the operational amplifier U2A, the other end of the resistor R2 outputs a voltage signal Vout and is connected with one end of a capacitor C6, and.
3. The matrix IGBT temperature measurement system according to claim 2, characterized in that: the power module is connected with the temperature sensor through capacitors C1 and C2, one ends of the capacitors C1 and C2 are connected with pin 1 of the power module and the temperature sensor U1, and the other ends of the capacitors C1 and C2 are respectively connected with pin 3 of the temperature sensor U1 and are grounded.
4. The matrix IGBT temperature measurement system according to claim 1, characterized in that: the IGBT power module comprises an IGBT shell, one or more strip-shaped heat dissipation sheet mounting holes which are arranged side by side at intervals are formed in the IGBT shell, a same IGBT circuit assembly is installed in each strip-shaped heat dissipation sheet mounting hole, each IGBT circuit assembly comprises a strip-shaped heat dissipation sheet connected in each strip-shaped heat dissipation sheet mounting hole, a first IGBT switch and a second IGBT switch which are arranged in the length direction at intervals are installed on the inner side end face of each strip-shaped heat dissipation sheet respectively, the first IGBT switches and the second IGBT switches on the strip-shaped heat dissipation sheets are distributed in a matrix mode, c poles of the first IGBT switches on the strip-shaped heat dissipation sheets are used as input positive poles respectively, e poles of the second IGBT switches are used as input negative poles respectively, e poles of the first IGBT switches are connected in parallel, and c poles of the second IGBT switches are connected in parallel to serve as output ends;
and each strip-shaped fan heat piece close to the e pole of the first IGBT switch or the e pole of the second IGBT switch is provided with a temperature sensor, and each temperature sensor is correspondingly connected with a temperature-voltage conversion circuit.
5. The matrix IGBT temperature measurement system according to claim 4, characterized in that: the distance between the temperature sensor and the e pole of the first IGBT switch or the e pole of the second IGBT switch is 1.5-2.5 mm.
6. The matrix IGBT temperature measurement system according to claim 4, characterized in that: when a plurality of IGBT circuit components are arranged, a multiplexer is connected between the temperature-voltage conversion circuit and the MCU module.
7. The matrix IGBT temperature measurement system according to claim 4, characterized in that: and the air direction of the radiating fan is vertical to the length direction of the strip-shaped radiating fins.
8. The matrix IGBT temperature measurement system according to claim 4, characterized in that: the first IGBT switch and the second IGBT switch are distributed and installed on the strip-shaped heat dissipation sheet through ceramic insulation gaskets.
9. The matrix IGBT temperature measurement system according to claim 4, characterized in that: and the temperature sensor is mounted on the strip-shaped radiating fin after being pasted with a piece through the copper substrate.
10. The matrix IGBT temperature measurement system according to claim 8, characterized in that: and heat conducting glue is respectively arranged among the inner surface of the strip-shaped radiating fin, the first IGBT switch, the second IGBT switch and the ceramic insulating gasket.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112304464A (en) * | 2020-12-28 | 2021-02-02 | 杭州飞仕得科技有限公司 | Temperature sampling transmission circuit and sampling control method and device thereof |
| US11791727B2 (en) | 2020-11-24 | 2023-10-17 | Audi Ag | Half-bridge module with precise temperature detection |
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2019
- 2019-09-12 CN CN201921515269.8U patent/CN210775735U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11791727B2 (en) | 2020-11-24 | 2023-10-17 | Audi Ag | Half-bridge module with precise temperature detection |
| CN112304464A (en) * | 2020-12-28 | 2021-02-02 | 杭州飞仕得科技有限公司 | Temperature sampling transmission circuit and sampling control method and device thereof |
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