CN218633720U - Three-phase inverter power module and three-phase inverter power device - Google Patents

Three-phase inverter power module and three-phase inverter power device Download PDF

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CN218633720U
CN218633720U CN202220752965.6U CN202220752965U CN218633720U CN 218633720 U CN218633720 U CN 218633720U CN 202220752965 U CN202220752965 U CN 202220752965U CN 218633720 U CN218633720 U CN 218633720U
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phase inverter
inverter power
power module
terminals
terminal
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Chinese (zh)
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S·哈特曼
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Hitachi Energy Co ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/493—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

A three-phase inverter power module (40) is specified, comprising at least two separate six-piece submodules (28, 29, 30), wherein: -each six-piece mounting module (28, 29, 30) comprises at least one half-bridge subunit per phase; -each half-bridge subunit comprises an internal positive DC terminal, an internal negative DC terminal and an internal alternating AC terminal; -the six separate pieces of assembled modules (28, 29, 30) are electrically coupled in parallel with respect to each other.

Description

Three-phase inverter power module and three-phase inverter power device
Technical Field
The present disclosure relates to a three-phase inverter power module and a three-phase inverter power device.
Background
Low loss and low cost are increasingly important for three-phase inverter power modules in motor vehicles and/or other applications. Electrical losses are the cost that needs to be paid for by electricity charges or by using larger batteries in electric vehicles, for example. The electrical losses and costs are in a trade-off relationship. It may cost more money to obtain better power electronics with lower electrical losses.
One approach for reducing electrical losses may be to switch the three-phase inverter more quickly. However, when switching faster, higher overvoltages are generated by the commutation loop inductance, thus resulting in overvoltages. Therefore, according to the present invention, it is necessary to reduce the DC voltage of the three-phase inverter in order to provide sufficient safety within the blocking capability of the switches of the three-phase inverter. Furthermore, in this respect, the ability to electrically insulate should be considered. At lower DC voltages, the performance of the three-phase inverter and/or the overall system may be reduced.
SUMMERY OF THE UTILITY MODEL
Embodiments of the present disclosure address, in whole or in part, the above-described de-energizing by a three-phase inverter power module having improved performance and reduced electrical losses, and a three-phase inverter power device having such a three-phase inverter power module.
Exemplary embodiments of the present disclosure address the above-described shortcomings with the three-phase inverter power module and three-phase inverter power device of the present disclosure. Other exemplary embodiments will become apparent from the following description.
A first aspect relates to a three-phase inverter power module.
The term "power" here and hereinafter refers, for example, to three-phase inverter power modules and three-phase inverter power devices suitable for handling voltages and currents greater than 100V and/or greater than 10A. For example, power may refer to voltage, and/or current, and/or the product of voltage and current. The voltage and/or current may exemplarily be a load voltage and/or a load current, an input voltage and/or an input current, or an output voltage and/or an output current of such a power module.
For example, three-phase inverter power modules may be used in automotive vehicle applications, such as electric vehicles, hybrid vehicles, motorcycles, buses, trucks, off-road work vehicles, and charging stations. Furthermore, the three-phase inverter power module may also be suitable for other applications.
With respect to the following description, a module included in another module may be represented as a sub-module or a sub-unit of the module. For example, such sub-modules are not separate modules. Accordingly, the terminals of a module included in another module may be denoted as connectors and/or internal terminals. Accordingly, the terminals of the other module may be denoted as external terminals.
According to an embodiment of the first aspect, the three-phase inverter power module according to the first aspect comprises at least two separate six-pack (six-pack) sub-modules.
According to an embodiment, each six-piece mounting module comprises at least one half-bridge subunit per phase.
According to an embodiment, each half-bridge subunit comprises an internal positive DC terminal, an internal negative DC terminal and an internal alternating AC terminal. The internal AC terminal may also be denoted as an output terminal.
According to an embodiment, the six separate pieces of the assembled modules are electrically coupled in parallel with respect to each other.
The term "comprising" with respect to a three-phase inverter power module comprising one or more six-piece submodules refers to both electrical and functional definitions. Thus, the six-piece sub-module included in the three-phase inverter power module is not a separate module, but may also be represented as a corresponding sub-module or subunit of the three-phase inverter power module.
The term "comprising" in relation to a six-piece assembled module comprising one or more half-bridge modules or subunits refers to the definition of electrical and functional. Thus, the half-bridge modules or subunits comprised in the respective six-piece sub-module are not separate modules, but may also be denoted as respective sub-modules or subunits of the respective six-piece sub-module.
For example, the half-bridge sub-cells may be distributed on separate substrates.
All half-bridge subunits of the same phase are electrically coupled in parallel with each other by electrically coupling the six separate pieces of sub-modules in parallel with each other.
Thus, a plurality of six-piece assembled modules in parallel are integrated into a single module. A conventional six-piece module may be formed by using separate half-bridge sub-units. For example, a conventional half-bridge sub-module may include semiconductor chips electrically coupled in series, forming a high-side device and a low-side device. In this case, there may be a plurality of parallel semiconductor chips per high side and per low side. However, according to the first aspect and embodiments thereof, the parallel connected semiconductor chips of the individual switches of the half-bridge sub-units of the three-phase inverter power module are evenly distributed within the power module. In this way, the current slope during commutation (commutation) of one or more half-bridges is also evenly distributed to all pairs of internal positive and negative DC terminals of all half-bridge sub-units. Therefore, compared with a conventional three-phase inverter, the inductance of a commutation loop of the three-phase inverter power module can be reduced by up to 20%.
In accordance with at least one embodiment of the three-phase inverter power module, the three-phase inverter power module includes one or more external positive DC terminals. The one or more external positive DC terminals are electrically coupled with the respective internal positive DC terminals of all of the split half-bridge sub-units. The three-phase inverter power module also includes one or more external negative DC terminals. The one or more external negative DC terminals are electrically coupled with the respective internal negative DC terminals of all of the split half-bridge sub-units.
For example, one or more external positive DC terminals of the three-phase inverter power module are electrically coupled with the internal positive DC terminals of all of the split half-bridge sub-units by positive DC bus bars.
For example, one or more external negative DC terminals of the three-phase inverter power module are electrically coupled with the internal negative DC terminals of all of the separate half-bridge sub-units by a negative DC bus bar.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least one external AC terminal per phase electrically coupled with the respective internal AC terminals of all the split half-bridge subunits of the respective phase.
For example, one or more external AC terminals of each phase of the three-phase inverter power module are electrically coupled with the internal AC terminals of the respective phase of all of the split half-bridge sub-units by AC bus bars. For example, a three-phase inverter power module includes three AC bus bars, i.e., one AC bus bar per phase.
According to an embodiment, the three-phase inverter power module comprises at least two external AC terminals per phase.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least two external positive DC terminals.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module includes at least two external negative DC terminals.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least k external positive DC terminals and k +1 external negative DC terminals, where k is an integer and k > =1.
In this way, the three-phase inverter power module may be arranged in a symmetrical structure. This symmetrical structural arrangement or a coaxial arrangement of the terminals reduces the stray inductance of the terminal setting including the respective terminal.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least j external negative DC terminals and j +1 external positive DC terminals, wherein j is an integer and j > =1.
In this way, the three-phase inverter power module may be arranged in a symmetrical structure. This symmetrical structural arrangement or a coaxial arrangement of the terminals reduces the stray inductance set by the terminals including the respective terminals.
According to at least one embodiment of the three-phase inverter power module, the external positive DC terminal and the external negative DC terminal are disposed on a first lateral side of the three-phase inverter power module. The external AC terminal is disposed on a second lateral side of the three-phase inverter power module.
The first lateral side is different from the second lateral side. For example, the second lateral side is opposite the first lateral side.
In this way, the three-phase inverter power module comprises a DC side and an AC side, which are different from each other, i.e. which may be opposite. Thus, for example, the process of providing the connection to the corresponding external terminal can be simplified, and the wiring work can be minimized for the user of the three-phase inverter power module.
In accordance with at least one embodiment of the three-phase inverter power module, the three-phase inverter power module includes at least three separate six-piece mounting modules.
Thus, the load can be shared equally among three separate six-piece modules. Therefore, compared with a conventional three-phase inverter, the inductance of a commutation loop of the three-phase inverter power module can be reduced by one third.
This is due to the terminal inductance contributing to the commutation loop inductance being reduced to one third. The reduction of stray inductance is only effective if the three half-bridge sub-units are not phase-commutated simultaneously. This must be ensured by the control algorithm. In a low inductance setting, the terminal inductance typically contributes 30% of the total inductance. If this can be reduced to 10%, the total inductance will be reduced from 100% to 80%. Thus, a 20% reduction in the total inductance of the commutation loop can be achieved.
According to at least one embodiment of the three-phase inverter power module, each half-bridge subunit comprises two semiconductor chips formed as switches. The three-phase inverter power module comprises (external) control terminals configured to obtain signals for controlling the switches of the half-bridge sub-units.
The two semiconductor chips formed as switches of each half-bridge subunit may form a high-side device and a low-side device. The device may include one or more semiconductor chips. One or more semiconductor chips may form a switch.
The two semiconductor chips of each half-bridge subunit may be connected in parallel. Thus, current sharing and/or current distribution of the parallel semiconductor chips may be improved. For example, each side of each half-bridge subunit may still be implemented by using multiple semiconductor chips in parallel.
The three-phase inverter power module may include one or more control terminals, e.g., one control terminal for each switch. For example, each switch corresponds to the same phase and the same side, i.e. high side or low side, of the respective half-bridge subunit.
Each semiconductor chip is formed, for example, by at least one of a diode and/or a switch. The semiconductor chip is illustratively a transistor, a varistor, an insulated gate bipolar transistor (abbreviated as IGBT), or a metal oxide semiconductor field effect transistor (abbreviated as MOSFET), or a metal insulator semiconductor field effect transistor (abbreviated as MISFET), or any other arbitrary power semiconductor device, i.e., a gallium nitride HEMT, or the like. For example, for a silicon carbide MOSFET, no diode is required.
For example, one or more control terminals may be used to control the gate terminal of the respective switch. In addition, one or more control terminals may have the function of a detector, or may be used to control further terminals of the respective switch, i.e. an auxiliary emitter, and/or an auxiliary source, and/or an auxiliary collector, and/or an auxiliary drain. The control function of one or more control terminals may depend on the type of semiconductor chip used.
For example, the three-phase inverter power module is arranged such that all parallel chips have similar and/or identical path lengths to one nearest external positive DC terminal and/or to one nearest external negative DC terminal. For example, all parallel chips have the same path length to all external positive DC terminals and to all external negative DC terminals. For example, all parallel chips have the same path length to all external AC terminals (i.e., to all output terminals).
The term "same" with respect to path length may be for the purpose of homogenization of the switching. However, the path lengths may be relatively the same, as exactly the same path length may not be achievable in production.
In this way, for example, if each semiconductor chip is an IGBT, the same induced voltage drop is applied to all the source potentials of the chips connected in parallel during the turn-on of the corresponding switch and/or switches. For example, commutation loop inductance can cause over-voltages during switching. Therefore, reduced commutation loop inductance is required for fast switching. The overvoltages may be similar at the same or at least similar path lengths.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises a multilayer printed circuit board PCB. The multi-layer PCB includes two or more layers. In addition, the multi-layer PCB is electrically connected to the control terminal.
Alternatively, the three-phase inverter power module may include different means for interconnecting connected to one or more control terminals.
For example, the multilayer PCB is electrically connected to one or more control terminals.
For example, if the switches are IGBTs and/or MOSFETs, the multilayer PCB may comprise control terminals and/or auxiliary terminals for respective gates and/or emitters and/or collectors of the respective IGBTs and/or for respective drains and/or sources of the respective MOSFETs.
For example, a multilayer PCB may be provided such that the conductor traces on the multilayer PCB may have a low and uniform inductance. This can be achieved by: when designing a multilayer PCB, the gate connections for the switches of the half-bridge subunits, and/or the gate terminals for the switches of the half-bridge subunits, and/or the auxiliary emitters for the switches of the half-bridge subunits, the alternation of layers, etc. are routed in parallel. Such an alternation of layers, and/or an exchange of gate connections and auxiliary emitter connections, may be used to reduce or enhance commutation loop inductance. It may therefore be applied in particular to conditioning and/or homogenization. For example, when positioning the conductor tracks on a multilayer PCB, the adjustment or homogenization of the inductance may be done with respect to the positioning of the conductor tracks with respect to each other, resulting in a uniform switching, for example, in the case of multiple gates, by respectively arranging and/or routing the respective gate connections with respect to the respective auxiliary emitter connections. For example, the gate connections (i.e., the gate conductor traces) should also have the same path length. For example, the multilayer PCB may include gate resistors for the switches of the half-bridge subcells. Inductance can be reduced by using parallel routing of the gate connections (i.e., gate conductor traces) and the auxiliary emitter connections.
According to at least one embodiment of the three-phase inverter power module, control terminals are provided at a third lateral side of the three-phase inverter power module.
For example, the third lateral side may be the first lateral side or the second lateral side.
Alternatively, for example, the third lateral side is perpendicular to the first lateral side and the second lateral side.
Thus, for example, the process of providing the connection to the corresponding external terminal can be simplified, and the wiring workload can be minimized for the user of the three-phase inverter power module. For example, internal wiring of the module may be difficult, but external wiring may be easier for a user.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least two parallel substrates. Each substrate includes all three phases of the respective six-piece assembled module. The three phases of the respective substrates are arranged in parallel.
For example, the three-phase inverter power module includes one base plate for each six-piece module.
According to at least one embodiment of the three-phase inverter power module, the three-phase inverter power module comprises at least two sets of chips. Each set of chips includes all three phases of the corresponding six-piece assembled module. The three phases of the respective sets of chips are arranged in parallel.
In accordance with at least one embodiment of the three-phase inverter power module, the three-phase inverter power module includes a common housing.
For example, the housing surrounds the substrate. The housing may comprise one or more load terminals and/or gate signal terminals and/or additional control terminals.
A second aspect relates to a three-phase inverter power device. According to an embodiment of the second aspect, the three-phase inverter power apparatus comprises at least one three-phase inverter power module as described herein above. Therefore, all features disclosed in connection with the three-phase inverter power module are also disclosed in connection with the power semiconductor device, and vice versa.
The solution according to the first aspect and embodiments of the first aspect is to integrate a plurality of six pieces in parallel into one module, i.e. a three-phase inverter power. Six pieces of electrically parallel packed sub-modules, each comprising three parallel half-bridge sub-modules or sub-units, are integrated into the one module. They are separated from each other in the module. However, these six-piece sub-modules and half-bridge sub-modules or sub-units are not separate modules. Furthermore, they are functionally included in a three-phase inverter power module.
Drawings
The subject matter of the present disclosure will be explained in more detail below with reference to exemplary embodiments illustrated in the appended drawings.
Fig. 1 schematically shows a circuit diagram of a conventional half-bridge module.
Fig. 2 schematically shows a conventional three-phase inverter consisting of three individual half-bridge modules.
Fig. 3 schematically shows a conventional six-piece module.
Fig. 4 schematically shows another conventional three-phase inverter.
Fig. 5 and 6 each schematically illustrate a three-phase inverter power module according to an exemplary embodiment.
Fig. 7 schematically illustrates a layout of a three-phase inverter power module 40 of an exemplary embodiment.
Detailed Description
The reference symbols used in the drawings and their meanings are listed in abstract form in the list of reference symbols. In principle, identical parts are provided with the same reference numerals in the figures. It should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.
The conventional half-bridge module 1 of fig. 1 comprises a first branch 2 and a second branch 3. The half-bridge module 1 may also be denoted as a phase leg. The first branch 2 comprises a first switch 4, a first freewheeling diode 5 electrically coupled in anti-parallel with the first switch 4, and a first switch terminal 6. The first branch 2 may also be indicated as high side. The first switch terminal 6 is configured for controlling the state of the first switch 4. For example, the first switch terminal 6 is a gate terminal of the first switch 4. The second branch 3 comprises a second switch 7, a second freewheeling diode 8 electrically coupled in anti-parallel with the second switch 7, and a second switch terminal 9. The second branch 3 may also be represented as a low side. The second switch terminal 9 is, for example, a gate terminal of the second switch 7. The second switch terminal 9 is configured for controlling the state of the second switch 7. The first switch 4 and the second switch 7 are electrically coupled in series.
The first switch 4 and the second switch 7 are each illustratively a transistor, an insulated gate bipolar transistor (abbreviated as IGBT), or a metal oxide semiconductor field effect transistor (abbreviated as MOSFET), or a metal insulator semiconductor field effect transistor (abbreviated as MISFET), or other types of switching devices. During normal operating conditions, neither the first switch 4 nor the second switch 7 is simultaneously conductive, or one but not both of the first switch 4 and the second switch 7 is simultaneously conductive.
Depending on the type of the first switch 4 and/or the second switch 7, the first freewheeling diode 5 and/or the second freewheeling diode 8 may be omitted.
Furthermore, the half-bridge module 1 comprises a positive DC terminal 10, a negative DC terminal 11 and an alternating AC terminal 12. The AC terminals 12 may also be denoted as phase terminals, and/or may also be denoted as output terminals.
For example, the half-bridge module 1 may be used to connect the potential of the positive DC terminal 10 or the potential of the negative DC terminal 11 to the AC terminal 12 and/or, exemplarily, to a load connected thereto.
For example, instead of only one switch and one freewheeling diode, the first branch 2 and/or the second branch 3 may comprise more than one switch and/or more than one freewheeling diode. In this way, the current carrying capacity and/or current capacity may be increased.
The half-bridge module 1 may be denoted as a half-bridge subunit 1 if the half-bridge module 1 is comprised in another module or sub-module.
The conventional three-phase inverter of fig. 2 includes a first half-bridge module 13. The first half-bridge module 13 comprises a first positive DC terminal 14, a first negative DC terminal 15 and a first AC terminal 16. The first positive DC terminal 14 comprises a first inductance 17. The first negative DC terminal 15 comprises a second inductance 18.
The conventional three-phase inverter also comprises a second half-bridge module 19. The second half-bridge module 19 comprises a second positive DC terminal 20, a second negative DC terminal 21 and a second AC terminal 22.
The conventional three-phase inverter also comprises a third half-bridge module 23. The third half-bridge module 23 comprises a third positive DC terminal 24, a third negative DC terminal 25 and a second AC terminal 26.
Similar to the first half-bridge module 13, the second and third half- bridge modules 19, 23 comprise respective inductances for their respective DC terminals 20, 21, 24, 25, which inductances are not denoted with reference numerals for ease of understanding the drawing.
The first 13, second 19 and third 23 half-bridge modules may be constructed from the half-bridge module 1 as discussed with respect to fig. 1. A conventional three-phase inverter uses one of the three half- bridge modules 13, 19, 23 per phase, i.e. a first half-bridge module 13 for a first AC phase, a second half-bridge module 19 for a second AC phase, and a third half-bridge module 23 for a third AC phase.
For example, when the conventional three-phase inverter is operated so that commutation (commutation) occurs, one of the respective phases switches from a potential at the positive DC terminal of that phase to a potential at the negative DC terminal of that phase. A commutation loop is thus formed, which comprises the respective positive DC terminal and the respective negative DC terminal of the respective half-bridge module. The inductance of the respective half-bridge module therefore contributes to the commutation loop inductance. Commutation loop inductance is provided in part by stray inductance of the respective positive DC terminal and the respective negative DC terminal.
The conventional six-pack (six-pack) module 27 according to fig. 3 comprises a first half-bridge module 13, a second half-bridge module 19 and a third half-bridge module 23 as discussed with respect to fig. 2. The first 13, second 19 and third 23 half-bridge modules of the six-piece module 27 are electrically connected in parallel with respect to their positive DC terminals 14, 20, 24 and their negative DC terminals 15, 21, 25.
The term "comprising" with respect to the six-piece module 27 according to fig. 3 comprising the first 13, second 19 and third 23 half-bridge modules refers to a definition of electrical and functional. Thus, according to fig. 3, the first 13, second 19 and third 23 half-bridge modules are not separate modules, but may be represented as respective sub-modules or sub-units of the six-piece module 27, i.e. the first 13, second 19 and third 23 half-bridge sub-units.
For example, the first half-bridge module 13, the second half-bridge module 19, and the third half-bridge module 23 are included in the same housing of a conventional six-piece module 27.
The conventional three-phase inverter according to fig. 4 includes a first six-piece module 28, a second six-piece module 29, and a third six-piece module 30.
According to fig. 4, the first six-pack module 28, the second six-pack module 29 and the third six-pack module 30 are separate modules.
Each of the six- pack modules 28, 29, 30 may be configured similar to the conventional six-pack module 27 discussed with respect to fig. 3. However, the first, second and third six- pack modules 28, 29, 30 are smaller six-pack modules that are rated the same as the three half-bridge modules (such as the first, second and third half- bridge modules 13, 19, 23) in total with respect to their power specifications. For example, each of the six- pack modules 28, 29, 30 has only one third of the current capacity compared to the six-pack module according to fig. 3.
The conventional three-phase inverter according to fig. 4 comprises a fourth positive DC terminal 31, a fourth negative DC terminal 32 and a fourth AC terminal 33.
As disclosed in relation to fig. 3, the first 13, second 19 and third 23 half-bridge modules are not separate modules, but may also be represented as respective sub-modules or sub-units of six pack- ed modules 28, 29, 30. Thus, the terminals 14, 15, 16, 20, 21, 22, 24, 25, 26 of these sub-modules may also be represented as internal terminals and/or internal connections of the respective six- piece modules 28, 29, 30.
For example, the external fourth positive DC terminal 31 is connected to the internal first positive DC terminal 14 of the first half-bridge module 13 of the first six-piece module 28, the internal second positive DC terminal 20 of the second half-bridge module 19, and the internal third positive DC terminal 24 of the third half-bridge module 23.
For example, the external fourth negative DC terminal 32 is connected to the internal first negative DC terminal 15 of the first half-bridge module 13 of the first six-piece module 28, the internal second negative DC terminal 21 of the second half-bridge module 19, and the internal third negative DC terminal 25 of the third half-bridge module 23.
For example, the external fourth AC terminal 33 is connected to the internal first AC terminal 16 of the first half-bridge module 13 of the first six-pack module 28, the internal first AC terminal 16 of the first half-bridge module 13 of the second six-pack module 29, and the internal first AC terminal 16 of the first half-bridge module 13 of the third six-pack module 30.
Similar to the previous description, the conventional three-phase inverter according to fig. 4 comprises an external fifth positive DC terminal 34, an external fifth negative DC terminal 35 and an external fifth AC terminal 36, which terminals each comprise a respective connection.
For example, the external fifth AC terminal 36 is connected to the internal second AC terminal 22 of the second half-bridge module 19 of the first six-pack module 28, the internal second AC terminal 22 of the second half-bridge module 19 of the second six-pack module 29, and the internal second AC terminal 22 of the second half-bridge module 19 of the third six-pack module 30.
Similar to the previous, the conventional three-phase inverter according to fig. 4 comprises an external sixth positive DC terminal 37, an external sixth negative DC terminal 38 and an external sixth AC terminal 39, which terminals each comprise a respective connection.
For example, the external sixth AC terminal 39 is connected to the internal third AC terminal 26 of the third half-bridge module 23 of the first six-pack module 28, the internal third AC terminal 26 of the third half-bridge module 23 of the second six-pack module 29, and the internal third AC terminal 26 of the third half-bridge module 23 of the third six-pack module 30.
The first six-pack module 28, the second six-pack module 29 and the third six-pack module 30 are electrically connected in parallel. For example, they are electrically connected in parallel with respect to the external AC terminals 33, 36, 39.
A first six-pack module 28 is arranged in the first housing, a second six-pack module 29 is arranged in the second housing, and a third six-pack module 30 is arranged in the third housing. Therefore, the conventional three-phase inverter according to fig. 4 is formed by using three AC bus bars 52, 53, 54, one for each phase, i.e., the first AC bus bar 52, the second AC bus bar 53, and the third AC bus bar 54, which need to be externally connected to all six pieces of the mounted modules 28, 29, 30. Thereby, the external AC terminals 33, 36, 39 of the conventional three-phase inverter according to fig. 4 are formed.
This constitutes a high effort for the user of the conventional three-phase inverter to wire and/or connect the conventional three-phase inverter according to fig. 4.
The three-phase inverter power module 40 according to the exemplary embodiment of fig. 5 and 6 includes the first, second, and third six- piece modules 28, 29, and 30 as discussed with respect to fig. 4.
The term "comprising" with respect to the three-phase inverter power module 40 according to fig. 5 and 6 comprising the first six-pack module 28, the second six-pack module 29 and the third six-pack module 30 refers to a definition of electrical and functionality. Thus, according to fig. 5 and 6, the first, second and third six- piece modules 28, 29, 30 are not separate modules, but may also be represented as corresponding submodules of the three-phase inverter power module 40, i.e. the first, second and third six- piece modules 28, 29, 30.
In contrast to fig. 4, the first, second and third six-piece packaged modules 28, 29, 30 are arranged together in a three-phase inverter power module 40. For example, they are arranged in a housing of the three-phase inverter power module 40.
Illustratively, the external positive DC terminals 31, 34, 37 of the three-phase inverter power module 40 are connected by positive DC bus bars.
Illustratively, the external negative DC terminals 32, 35, 38 of the three-phase inverter power module 40 are connected by negative DC bus bars.
According to the exemplary embodiment of fig. 5, the first, second and third six- piece sub-assemblies 28, 29, 30 are electrically connected in parallel. For example, they are electrically connected in parallel with respect to the external AC terminals 33, 36, 39 by using the AC connection member 41. The AC connection 41 is arranged to the outside of the three-phase inverter power module 40, and this AC connection 41 may be formed by three AC bus bars 52, 53, 54 according to the exemplary embodiment of fig. 5.
The three-phase inverter power module 40 according to the exemplary embodiment of fig. 6 further comprises an AC connection 41. In this case, the AC connection 41 is included in the three-phase inverter power module 40 according to the exemplary embodiment of fig. 6. For example, the AC connector 41 is disposed in a housing of the three-phase inverter power module 40.
Exemplarily, the three-phase inverter power module 40 according to the exemplary embodiment of fig. 6 further comprises a further external first AC terminal 42, a further external second AC terminal 43 and a further external third AC terminal 44.
For example, the AC connection 41 includes three AC bus bars 52, 53, 54 as discussed with respect to fig. 4.
For example, when the three-phase inverter power module 40 according to the exemplary embodiment of fig. 5 and 6 is operated such that single-phase commutation occurs, a commutation loop is formed. The commutation loop for this phase comprises three pairs of positive DC terminals and three pairs of negative DC terminals, i.e. one pair for each of the half- bridge subunits 13, 19, 23 comprised in each of the six- piece modules 28, 29, 30. For example, there are three pairs of parallel terminals, such that the terminal inductance is reduced to one third from the original terminal inductance (i.e., in conventional schemes). In this case, the stray inductance of the positive DC terminal and the stray inductance of the negative DC terminal are correlated.
Illustratively, the commutation of the first AC phase involves the first half-bridge subunit 13 of the first six-piece submodule 28, the first half-bridge subunit 13 of the second six-piece submodule 29, and the first half-bridge subunit 13 of the third six-piece submodule 30. The commutation of the second AC phase involves, by way of example, the second half-bridge subunit 19 of the first six-piece modular block 28, the second half-bridge subunit 19 of the second six-piece modular block 29, and the second half-bridge subunit 19 of the third six-piece modular block 30. This can be applied to commutation of the third AC phase, respectively.
Thus, for example, the process of providing the connection to the corresponding external terminal can be simplified, and the wiring workload can be minimized for the user of the three-phase inverter power module. For example, internal routing/interconnection of modules may be more difficult, whereas external routing may be easier for users.
Thus, a commutation loop for one phase involves three pairs of positive and negative DC terminals in parallel. Thus, in contrast to the commutation loop discussed with respect to fig. 3, the terminal inductance contributing to the commutation loop inductance is reduced to one third due to the use of three parallel terminals. The reduction of stray inductances is only effective if the three half-bridge sub-units involved in the commutation of the phase are not commutated simultaneously. This must be ensured when controlling the switches of the respective half-bridge subunits.
For example, in a low inductance setting, the terminal inductance (i.e., the stray inductance of the respective positive and negative DC terminals) typically contributes 30% of the total inductance of the commutation loop. If the terminal inductance can be reduced to one third and thus to 10% of the total inductance, the total inductance will be reduced relatively from 100% to 80%. In this way, a 20% reduction in the total inductance of the commutation loop can be achieved.
The layout of the three-phase inverter power module 40 according to the exemplary embodiment of fig. 7 includes the three-phase inverter power module 40 as discussed with respect to fig. 6.
According to this exemplary embodiment, the three-phase inverter power module 40 further includes another external positive DC terminal 45. The external positive DC terminals 31, 34, 37, 45 of the three-phase inverter power module 40 are connected by a positive DC bus bar 50. The external negative DC terminals 32, 35, 38 of the three-phase inverter power module 40 are connected by a negative DC bus bar 51.
The external AC terminals 33, 42 of the three-phase inverter power module 40 are connected to the respective internal AC terminals of the six- piece modules 28, 29, 30 by a first AC bus bar 52. The external AC terminals 36, 43 of the three-phase inverter power module 40 are connected to the respective internal AC terminals of the six- piece modules 28, 29, 30 by a second AC bus bar 53. The external AC terminals 39, 44 of the three-phase inverter power module 40 are connected to the respective internal AC terminals of the six- piece module 28, 29, 30 by a third AC bus bar 54. In this case, the three AC busbars 52, 53, 54 may also be represented as internal connections of the three-phase inverter power module 40.
Thus, for example, the three-phase inverter power module 40 comprises at least j external negative DC terminals and j +1 external positive DC terminals, where j is an integer and j > =1. According to fig. 7, j has a value of three. In this way, the three-phase inverter power modules 40 may be arranged in a symmetrical configuration for arranging different AC phases. The symmetrical structure is beneficial to reducing stray inductance.
Alternatively, the three-phase inverter power module 40 may comprise at least k external positive DC terminals 31, 34, 37, 45 and k +1 external negative DC terminals 32, 35, 38, where k is an integer and k > =1.
According to this exemplary embodiment, the external positive DC terminals 31, 34, 37, 45 and the external negative DC terminals 32, 35, 38 are provided on a first lateral side of the three-phase inverter power module 40, and the external AC terminals 33, 36, 39, 42, 43, 44 are provided on a second lateral side of the three-phase inverter power module 40, wherein the second lateral side is opposite to the first lateral side.
According to this exemplary embodiment, three-phase inverter power module 40 also includes a multilayer Printed Circuit Board (PCB) 46. The multi-layer PCB 46 may also be denoted as a control signal PCB.
For example, the three-phase inverter power module 40 may also include control terminals (which are not depicted in fig. 7) configured to obtain signals for controlling the switches of the half-bridges of the six-piece module included in the three-phase inverter power module 40.
According to this exemplary embodiment, the three-phase inverter power module 40 further includes a first set of chips 47, a second set of chips 48, and a third set of chips 49. The first group of chips 47 includes all three phases of the first six-piece assembly module 28, i.e., the first phase chip 55 of the first group of chips 47. The second set of chips 48 comprises all three phases of the second six-piece assembled module 29. The third set of chips 49 includes all three phases of the third six-piece assembled module 30. The three phases of each respective set of chips are arranged in parallel. Each set of chips may be mounted to a substrate forming a sub-module.
Illustratively, the multi-layer PCB 46 includes two or more layers, and the multi-layer PCB 46 may be electrically connected to the control terminals. The control terminals are disposed on a third lateral side of the three-phase inverter power module 40, such as near the right side of the third set of chips 49, or near the left side of the first set of chips 47. Alternatively, the control terminals may be positioned on either side of the three-phase inverter power module 40.
With regard to the foregoing description, a module included in another module may be represented as a sub-module of the module. For example, such sub-modules are not separate modules. Accordingly, the terminals of the modules included in the further modules may be denoted as connectors or internal terminals.
List of reference numerals
1. Half-bridge module
2. First branch
3. The second branch
4. First switch
5. First freewheeling diode
6. First switch terminal
7. Second switch
8. Second freewheeling diode
9. Second switch terminal
10. Positive Direct Current (DC) terminal
11. Negative DC terminal
12. Alternating Current (AC) terminal
13. First half bridge module
14. First positive DC terminal
15. First negative DC terminal
16. First AC terminal
17. First inductor
18. Second inductor
19. Second half-bridge module
20. Second positive DC terminal
21. Second negative DC terminal
22. Second AC terminal
23. Third half-bridge module
24. Third positive DC terminal
25. Third negative DC terminal
26. Third AC terminal
27. Six-piece module
28. First six-piece module
29. Second six-piece module
30. Third six-piece module
31. External fourth positive DC terminal
32. External fourth negative DC terminal
33. External fourth AC terminal
34. External fifth positive DC terminal
35. External fifth negative DC terminal
36. External fifth AC terminal
37. External sixth positive DC terminal
38. External sixth negative DC terminal
39. External sixth AC terminal
40. Three-phase inverter power module
41 AC connector
42. Another external first AC terminal
43. Another external second AC terminal
44. Another external third AC terminal
45. Another external positive DC terminal
46. Multilayer Printed Circuit Board (PCB)
47. First group of chips
48. Second group of chips
49. Third group of chips
50. Positive DC bus bar
51. Negative DC bus bar
52. First AC bus bar
53. Second AC bus bar
54. Third AC bus bar
55. A first phase chip.

Claims (15)

1. A three-phase inverter power module comprising at least two separate six-piece submodules and a multilayer printed circuit board, PCB, wherein:
each six-piece module comprises at least one half-bridge subunit per phase;
-each half-bridge subunit comprises an internal positive DC terminal, an internal negative DC terminal and an internal alternating AC terminal; and is provided with
-the six separate pieces of assembled modules are electrically coupled in parallel with respect to each other, and
wherein the multilayer printed circuit board PCB is designed to reduce or enhance commutation loop inductance by routing in parallel gate connections for the switches of the half-bridge sub-units and/or gate terminals for the switches of the half-bridge sub-units and/or auxiliary emitters for the switches of the half-bridge sub-units.
2. The three-phase inverter power module of claim 1, comprising:
-one or more external positive DC terminals electrically coupled with respective internal positive DC terminals of all the split half-bridge sub-units; and
-one or more external negative direct current, DC, terminals electrically coupled with corresponding internal negative direct current, DC, terminals of all the separated half-bridge sub-units.
3. The three-phase inverter power module of claim 2, comprising at least one external AC terminal per phase electrically coupled with respective internal alternating current AC terminals of all of the split half-bridge sub-units of the respective phase.
4. A three-phase inverter power module according to claim 2 or 3, comprising at least two external positive DC terminals.
5. A three-phase inverter power module according to claim 2 or 3, comprising at least two external negative direct current, DC, terminals.
6. A three-phase inverter power module according to claim 2 or 3 comprising at least k external positive DC terminals and k +1 external negative DC terminals, where k is an integer and k > =1.
7. A three-phase inverter power module according to claim 2 or 3 comprising at least j external negative DC terminals and j +1 external positive DC terminals, where j is an integer and j > =1.
8. The three-phase inverter power module of claim 3, wherein the external positive DC terminals and the external negative DC terminals are disposed on a first lateral side of the three-phase inverter power module and the external AC terminals are disposed on a second lateral side of the three-phase inverter power module.
9. A three-phase inverter power module according to any of claims 1-3 including at least three separate six-piece modules.
10. The three-phase inverter power module of any of claims 1-3, wherein each half-bridge subunit includes two semiconductor chips formed as switches, and the three-phase inverter power module includes control terminals configured to obtain signals for controlling the switches of the half-bridge subunits.
11. The three-phase inverter power module of claim 10, comprising a multi-layer Printed Circuit Board (PCB), wherein the multi-layer PCB comprises two or more layers and the multi-layer PCB is electrically connected to the control terminals.
12. The three-phase inverter power module of claim 10, wherein the control terminal is disposed on a third lateral side of the three-phase inverter power module.
13. The three-phase inverter power module of any of claims 1-3, comprising at least two parallel substrates, wherein each substrate includes all three phases of a respective six-piece submodule, wherein the three phases of a respective substrate are arranged in parallel.
14. The three-phase inverter power module of any of claims 1-3, comprising at least two sets of chips, wherein each set of chips includes all three phases of a respective six-piece module, wherein the three phases of a respective set of chips are arranged in parallel.
15. The three-phase inverter power module of any of claims 1-3, wherein the multi-layer printed circuit board PCB comprises two or more layers to provide alternating of layers and/or exchange of gate connections and auxiliary emitter connections for tuning and/or homogenizing inductance.
CN202220752965.6U 2021-05-10 2022-03-31 Three-phase inverter power module and three-phase inverter power device Active CN218633720U (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01122370A (en) * 1987-11-05 1989-05-15 Mitsubishi Electric Corp Transistor inverter
JP5060073B2 (en) * 2006-06-30 2012-10-31 株式会社東芝 Power converter
DE102012205725A1 (en) * 2012-04-05 2013-10-10 Robert Bosch Gmbh Power electronics module, method of manufacture
JP5991255B2 (en) * 2013-04-08 2016-09-14 株式会社デンソー Power converter
EP3358738A1 (en) * 2017-02-03 2018-08-08 Siemens Aktiengesellschaft Power semiconductor circuit

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