CN218632013U

CN218632013U - Universal split-gate groove type MOSFET device

Info

Publication number: CN218632013U
Application number: CN202222665445.4U
Authority: CN
Inventors: 朱开兴; 陈煊
Original assignee: Fujian Long Tek Electronic Technology Co ltd
Current assignee: Fujian Long Tek Electronic Technology Co ltd
Priority date: 2022-10-11
Filing date: 2022-10-11
Publication date: 2023-03-14
Anticipated expiration: 2032-10-11

Abstract

The utility model belongs to the technical field of the electronic component technique and specifically relates to a general type split-gate slot type MOSFET device, including protecting crust, lower protecting crust and metal oxide field effect transistor body, the equal fixedly connected with fixed pin in both ends about the metal oxide field effect transistor body, fixed pin passes down in the both ends upside about the protecting crust, fixed pin bottom sliding connection has the extension pin, extend pin upper end fixedly connected with limit slide, limit slide sliding connection is in spacing spout, spacing spout is seted up in the fixed pin bottom side, the fixed pin bottom has cup jointed the stop collar, and stop collar and fixed pin fixed connection, sliding connection has the extension pin in the stop collar, the utility model discloses when making when needs assemble the metal oxide field effect transistor body, can extend the pin to it fast to can adapt to different circumstances, increase device's commonality.

Description

Universal split-gate groove type MOSFET device

Technical Field

The utility model relates to an electronic component technical field specifically is a general type split gate slot type MOSFET device.

Background

The MOSFET is an abbreviation of metal-oxide semiconductor field effect transistor, abbreviated as MOSFET, and is a field effect transistor that can be widely used in analog circuits and digital circuits, and can be classified into two types, N-type and P-type, according to the polarity of its "channel".

Most split gate trench type MOSFET devices on the market have the problem of poor universality when being connected with different devices, so that the pins on the devices and the MOSFET devices cannot be connected, and the use effect of the devices is influenced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a general type split gate slot type MOSFET device to propose the relatively poor problem of most MOSFET device commonality in solving above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme:

the utility model provides a general type split-gate slot type MOSFET device, includes protecting crust, lower protecting crust and metal oxide field effect transistor body, the equal fixedly connected with fixed pin in both ends about the metal oxide field effect transistor body, fixed pin passes in the both ends upside about the protecting crust down, fixed pin bottom sliding connection has the extension pin, extend pin upper end fixedly connected with spacing slider, spacing slider sliding connection is in spacing spout, spacing spout is seted up in fixed pin bottom side, the fixed pin bottom has cup jointed the stop collar, and stop collar and fixed pin fixed connection, sliding connection has the extension pin in the stop collar, it has the rubber damping pad to extend the pin right-hand member slip, rubber damping pad fixed connection is in the stop collar lateral wall.

Preferably, a plurality of fixed pins are arranged on the metal oxide semiconductor field effect transistor body.

Preferably, grooves are formed in the front side and the rear side of the bottom end of the upper protective shell, fixing plates are arranged in the grooves in the upper protective shell in a sliding mode, and the fixing plates are fixedly connected to the side walls of the front end and the rear end of the lower protective shell.

Preferably, the bolts penetrate through the left side and the right side of the front end and the rear end of the upper protective shell, are in threaded connection with the upper protective shell and penetrate through the fixing plate.

Preferably, four corners of the upper end and the lower end of the metal oxide semiconductor field effect transistor body are fixedly connected with supporting legs, the supporting legs on the bottom side of the metal oxide semiconductor field effect transistor body are attached to the lower protective shell, and the supporting legs on the upper end of the metal oxide semiconductor field effect transistor body are fixedly connected to the upper protective shell.

Preferably, the upper end of the metal oxide semiconductor field effect transistor body is fixedly connected with a plurality of heat conduction columns, the heat conduction columns on the metal oxide semiconductor field effect transistor body penetrate through the side wall of the upper end of the upper protective shell, and the heat conduction columns are fixedly connected with the upper protective shell.

Preferably, the upper end of the upper protective shell is fixedly connected with a heat dissipation plate, and the bottom end of the heat dissipation plate is fixedly connected with a heat conduction column.

Compared with the prior art, the beneficial effects of the utility model are that:

1. the utility model discloses in, through the fixed pin that sets up, extend pin, spacing slider, rubber damping pad, spacing spout and stop collar for when needs assemble the metal-oxide semiconductor field effect transistor body, can extend the pin to it fast, thereby can adapt to the different circumstances, increase the commonality of device.

2. The utility model discloses in, through last protecting crust, lower protecting crust, fixed plate and the bolt that sets up for carry out the protection of full aspect to the MOSFET body, and can also in time dismantle the maintenance when the MOSFET body goes wrong.

3. The utility model discloses in, through the heat conduction post and the heating panel that set up, can dispel the heat to the metal-oxide-semiconductor field effect transistor body in the use to solve after long-time high temperature work, the problem of damage appears easily.

Drawings

Fig. 1 is a schematic view of the overall structure of the present invention;

FIG. 2 is a sectional view of the mounting structure of the upper protective shell of the present invention;

FIG. 3 is a schematic view of the structure at A of FIG. 2 according to the present invention;

fig. 4 is a cross-sectional view of the overall structure of the present invention.

In the figure: 1-upper protective shell, 2-heat dissipation plate, 3-lower protective shell, 4-bolt, 5-fixed pin, 6-limit sleeve, 7-extension pin, 8-fixed plate, 9-limit slider, 10-rubber damping pad, 11-limit chute, 12-metal oxide semiconductor field effect transistor body, 13-heat conduction column, 14-support foot.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.

Referring to fig. 1-4, the present invention provides a technical solution:

specifically, as shown in fig. 1 and 3, a general split gate trench MOSFET device includes an upper protective shell 1, a lower protective shell 3, and a MOSFET body 12, where both left and right ends of the MOSFET body 12 are fixedly connected with fixing pins 5, the fixing pins 5 penetrate through the upper sides of the left and right ends of the lower protective shell 3, the bottom ends of the fixing pins 5 are slidably connected with extending pins 7, the upper ends of the extending pins 7 are fixedly connected with limit sliders 9, the limit sliders 9 are slidably connected in limit chutes 11, the limit chutes 11 are arranged in the bottom sides of the fixing pins 5, the bottom ends of the fixing pins 5 are sleeved with limit sleeves 6, the limit sleeves 6 are fixedly connected with the fixing pins 5, the extending pins 7 are slidably connected in the limit sleeves 6, the right ends of the extending pins 7 are slidably connected with rubber damping pads 10, and the rubber damping pads 10 are fixedly connected in the side walls of the limit sleeves 6, so that the lengths of the pins can be rapidly adjusted; the metal oxide semiconductor field effect transistor body 12 is provided with a plurality of fixed pins 5, and the connection stability can be improved through the plurality of fixed pins 5.

Specifically, as shown in fig. 1 and 2, grooves are formed in the front side and the rear side of the bottom end of an upper protective shell 1, fixing plates 8 are arranged in the grooves in the upper protective shell 1 in a sliding manner, the fixing plates 8 are fixedly connected in the side walls of the front end and the rear end of a lower protective shell 3, and the upper protective shell 1 and the lower protective shell 3 can be pre-fixed through the fixing plates 8; bolts 4 penetrate through the left side and the right side of the front end and the rear end of the upper protective shell 1, the bolts 4 are in threaded connection with the upper protective shell 1, the bolts 4 penetrate through the fixing plate 8, and the upper protective shell 1 and the lower protective shell 3 can be fixed again through the bolts 4; four corners of the upper end and the lower end of the MOSFET body 12 are fixedly connected with supporting legs 14, the supporting legs 14 on the bottom side of the MOSFET body 12 are attached to the lower protective shell 3, the supporting legs 14 on the upper end of the MOSFET body 12 are fixedly connected to the upper protective shell 1, and the MOSFET body 12 can be supported through the supporting legs 14.

As shown in fig. 1 and 4, the upper end of the mosfet body 12 is fixedly connected with a plurality of heat-conducting pillars 13, the heat-conducting pillars 13 on the mosfet body 12 are arranged, the heat-conducting pillars 13 penetrate through the sidewall of the upper end of the upper shielding shell 1, the heat-conducting pillars 13 are fixedly connected with the upper shielding shell 1, and the heat on the mosfet body 12 can be transferred to the heat-dissipating plate 2 through the heat-conducting pillars 13; go up protective housing 1 upper end fixedly connected with heating panel 2, heating panel 2 bottom fixedly connected with heat-conducting post 13 through heating panel 2, can dispel the heat.

The working process is as follows: the utility model discloses when using, can protect MOSFET body 12 through last protecting crust 1 and lower protecting crust 3, and through heat conduction post 13, can make heat transfer on MOSFET body 12 to heating panel 2, later can make the heat effluvium through heating panel 2, and then can be in the protection, can also play radiating effect, when needs are connected MOSFET body 12 with other equipment, can extend pin 7 through the pulling, cooperation stop collar 6 this moment, spacing slider 9 and spacing spout 11, can carry out spacing fixed to fixed pin 5 and extension pin 7, later cooperation rubber damping pad 10, can extend the back on the position that pin 7 extends to needs, fix, effectively improve the commonality of device.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A general type split-gate trench MOSFET device comprises an upper protective shell (1), a lower protective shell (3) and a metal-oxide-semiconductor field effect transistor body (12), and is characterized in that: the utility model discloses a metal oxide semiconductor field effect transistor, including metal oxide semiconductor field effect transistor body (12), both ends equal fixedly connected with fixed pin (5) about, fixed pin (5) pass under protective housing (3) in the both ends upside, fixed pin (5) bottom sliding connection has extension pin (7), extend pin (7) upper end fixedly connected with spacing slider (9), spacing slider (9) sliding connection is in spacing spout (11), spacing spout (11) are seted up in fixed pin (5) bottom side, stop collar (6) have been cup jointed to fixed pin (5) bottom, and stop collar (6) and fixed pin (5) fixed connection, sliding connection has extension pin (7) in stop collar (6), it has rubber damping pad (10) to extend pin (7) right-hand member slip, rubber damping pad (10) fixed connection is in stop collar (6) lateral wall.

2. A general type split-gate trench MOSFET device according to claim 1, wherein: the metal-oxide-semiconductor field effect transistor body (12) is provided with a plurality of fixed pins (5).

3. A general type split-gate trench MOSFET device according to claim 1, wherein: grooves are formed in the front side and the rear side of the bottom end of the upper protective shell (1), a fixing plate (8) is arranged in the groove in the upper protective shell (1) in a sliding mode, and the fixing plate (8) is fixedly connected to the side walls of the front end and the rear end of the lower protective shell (3).

4. A general type split-gate trench MOSFET device according to claim 1, wherein: bolts (4) penetrate through the left side and the right side of the front end and the rear end of the upper protective shell (1), the bolts (4) are connected with the upper protective shell (1) in a threaded mode, and the bolts (4) penetrate through the fixing plate (8).

5. A general type split-gate trench MOSFET device according to claim 1, wherein: supporting legs (14) are fixedly connected to four corners of the upper end and the lower end of the metal oxide semiconductor field effect transistor body (12), the supporting legs (14) on the bottom side of the metal oxide semiconductor field effect transistor body (12) are attached to the lower protective shell (3), and the supporting legs (14) on the upper end of the metal oxide semiconductor field effect transistor body (12) are fixedly connected to the upper protective shell (1).

6. A general type split-gate trench MOSFET device according to claim 1, wherein: the upper end of the metal-oxide semiconductor field effect transistor body (12) is fixedly connected with a plurality of heat conduction columns (13), the heat conduction columns (13) on the metal-oxide semiconductor field effect transistor body (12) are arranged, the heat conduction columns (13) penetrate through the side wall of the upper end of the upper protective shell (1), and the heat conduction columns (13) are fixedly connected with the upper protective shell (1).

7. A general type split-gate trench MOSFET device according to claim 1, wherein: go up protecting crust (1) upper end fixedly connected with heating panel (2), heating panel (2) bottom fixedly connected with heat conduction post (13).