CN218918854U

CN218918854U - Bipolar high-temperature-resistant field effect transistor

Info

Publication number: CN218918854U
Application number: CN202223301746.5U
Authority: CN
Inventors: 杜永亿
Original assignee: Shenzhen Liqualcomm Technology Co ltd
Current assignee: Shenzhen Liqualcomm Technology Co ltd
Priority date: 2022-12-06
Filing date: 2022-12-06
Publication date: 2023-04-25
Anticipated expiration: 2032-12-06

Abstract

The utility model discloses a bipolar high-temperature-resistant field effect tube, which relates to the technical field of field effect tubes and comprises a plurality of field effect tubes, wherein the field effect tubes are connected to the outer side of an electronic component, the electronic component is movably placed in a lower protective shell, an upper protective shell is movably inserted into the top end in the lower protective shell, a clamping mechanism which is convenient for clamping and positioning the upper protective shell is arranged on the lower protective shell, the electronic component adopts the same bipolar structure in a protective box in the prior art with the publication number of CN217182190U, the bipolar high-temperature-resistant field effect tube is different from the prior art, the bipolar high-temperature-resistant field effect tube can efficiently dissipate heat when the bipolar field effect tube works by utilizing a cooling liquid flow tube, the use efficiency is reduced by avoiding the influence of high temperature, and the clamping mechanism is matched with the functions of an insert a and an insert b, so that the upper protective shell can be conveniently detached on the lower protective shell, and the internal electronic component is more convenient to overhaul or maintain.

Description

Bipolar high-temperature-resistant field effect transistor

Technical Field

The utility model relates to the technical field of field effect transistors, in particular to a bipolar high-temperature-resistant field effect transistor.

Background

Field effect transistors can be classified into junction field effect transistors and metal-oxide semiconductor field effect transistors, which are conductive by the majority carriers, also known as unipolar transistors.

At present, the chinese patent document with publication number CN217182190U specifically discloses a device comprising a field effect tube, a thermal insulation layer is arranged at the outer side of the field effect tube at intervals, an insulating layer is fixedly arranged in the middle of the field effect tube, conductive structures for conducting electricity are arranged at two ends of the insulating layer, and a bottom plate is arranged at the bottom of the field effect tube.

In the practical use process of the bipolar high-temperature-resistant field effect tube, although the influence of the external high-temperature environment can be reduced, the use effect of the field effect tube is improved, but the heat dissipation effect is not obvious, the heat dissipation efficiency is low, and secondly, the protective box and the outside of the electronic components fixedly wrapped inside are inconvenient to disassemble, so that the electronic components inside are inconvenient to overhaul or maintain, and therefore, the bipolar high-temperature-resistant field effect tube is provided.

Disclosure of Invention

The utility model aims to provide a bipolar high-temperature-resistant field effect transistor so as to solve the problems in the background technology.

In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a bipolar high temperature resistant field effect transistor, includes a plurality of field effect transistors, and a plurality of field effect transistor are connected in the outside of electronic components, electronic components activity is placed in lower protecting crust, and the top activity in the lower protecting crust is inserted and is equipped with the protecting crust, installs the chucking mechanism that is convenient for carry out chucking location to the protecting crust down on the protecting crust, and electronic components adopts the bipolar type same structure of inside in the protecting box among the prior art of publication number CN 217182190U.

Preferably, the top end of the lower protective shell is fixedly provided with two symmetrically arranged cutting a and two symmetrically arranged cutting b, the vertical sections of the cutting a and the cutting b are of an inverted isosceles trapezoid structure, the bottom end of the upper protective shell is provided with an insertion channel a matched with the cutting a, the bottom end of the upper protective shell is provided with an insertion channel b matched with the cutting b, the vertical section of the upper protective shell is of an inverted L-shaped structure, and the vertical section of the lower protective shell is of an L-shaped structure.

Preferably, a cooling liquid flow tube is fixed on the inner top wall of the upper protective shell, a liquid inlet and a liquid outlet of the cooling liquid flow tube are both extended to the outer side of the upper protective shell, one end liquid inlet of the cooling liquid flow tube is connected to external cooling liquid supply equipment, and the other end of the cooling liquid flow tube is connected in a cooling liquid backflow box.

Preferably, the outer side of the cooling liquid flow tube is fixedly connected with a plurality of radiating fins, the radiating fins extend to the outer side of the upper protective shell, and the radiating fins can radiate heat absorbed by the cooling liquid flow tube, so that the radiating efficiency of the cooling liquid flow tube is ensured.

Preferably, the clamping mechanism comprises a fixed outer rod fixedly connected to the outer side of the lower protective shell, a movable inner rod is slidably connected in an inner movable cavity of the fixed outer rod, the bottom end of the movable inner rod is connected with the inner bottom wall of the movable cavity through a spring, an inclined surface is arranged at the top end of the movable inner rod, and a pushing column is fixedly connected to the outer side of the movable inner rod.

Preferably, a sliding block is fixedly connected to the outer side wall of the movable inner rod and is slidably connected to a sliding groove formed in the movable cavity.

Compared with the prior art, the utility model has the beneficial effects that:

1. the bipolar high-temperature-resistant field effect tube can efficiently dissipate heat when the bipolar field effect tube works by using the cooling liquid flow tube, so that the use efficiency is prevented from being reduced due to the influence of high temperature;

2. utilize chucking mechanism, and the effect of cooperation cutting a, cutting b can be convenient to last shield shell dismouting on lower shield shell, and then make to overhaul or maintain the inside electronic components more convenient.

Drawings

FIG. 1 is a schematic view of the overall structure of the present utility model;

FIG. 2 is a schematic view of the upper housing of the present utility model disassembled from the lower housing;

FIG. 3 is a schematic bottom view of the upper housing of the present utility model;

fig. 4 is a schematic view of the structure of each part of the clamping mechanism of the present utility model.

In the figure: 1. a field effect transistor; 2. an electronic component; 3. a lower protective shell; 31. cutting a; 32. cutting b; 33. insertion channel a; 34. insertion channel b; 4. an upper protective shell; 5. a coolant flow tube; 51. a heat radiation fin; 6. a clamping mechanism; 601. fixing the outer rod; 602. a movable inner rod; 603. a slide block; 604. a spring; 605. pushing the column.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Referring to fig. 1-4, the present utility model provides a technical solution: the utility model provides a bipolar high temperature resistant field effect transistor, includes a plurality of field effect transistor 1, and a plurality of field effect transistor 1 connect in the outside of electron components and parts 2, and electron components and parts 2 activity are placed in lower protecting crust 3, and the activity of the top in the lower protecting crust 3 is inserted and is equipped with upper protecting crust 4, and electron components and parts 2 adopt the bipolar same structure of inside in the protective housing among the prior art of publication number CN 217182190U.

The top of lower shield shell 3 is fixed with two cutting a31 and two cutting b32 that the symmetry set up, and the vertical cross-section of cutting a31 and cutting b32 all is the isosceles trapezoid structure that falls, and the insertion passageway a33 with cutting a31 matched with has all been seted up to the bottom of going up shield shell 4, and the insertion passageway b34 with cutting b32 matched with has all been seted up to the bottom of going up shield shell 4, and the vertical cross-section of going up shield shell 4 is the L shape structure of falling, and the vertical cross-section of lower shield shell 3 is the L shape structure.

The cooling liquid flow tube 5 is fixed on the inner top wall of the upper protective shell 4, the liquid inlet and the liquid outlet of the cooling liquid flow tube 5 are both extended to the outer side of the upper protective shell 4, one end liquid inlet of the cooling liquid flow tube 5 is connected to external cooling liquid supply equipment, the other end of the cooling liquid flow tube 5 is connected to the cooling liquid reflux box, a plurality of cooling fins 51 are fixedly connected to the outer side of the cooling liquid flow tube 5, the cooling fins 51 are all extended to the outer side of the upper protective shell 4, the plurality of cooling fins 51 can dissipate heat absorbed by the cooling liquid flow tube 5, and the cooling efficiency of the cooling liquid flow tube 5 is guaranteed.

Install the chucking mechanism 6 that is convenient for carry out chucking location to last shield shell 4 on the shield shell 3 down, chucking mechanism 6 is including the fixed outer pole 601 of rigid coupling in the shield shell 3 outside down, the inboard movable chamber sliding connection of fixed outer pole 601 has movable interior pole 602, the bottom of movable interior pole 602 links to each other with movable chamber inner bottom wall through spring 604, the top of movable interior pole 602 is equipped with the inclined plane, the outside rigid coupling of movable interior pole 602 has pushing post 605, the rigid coupling has slider 603 on the lateral wall of movable interior pole 602, slider 603 sliding connection is in the spout of seting up in the movable chamber.

According to the scheme, when the bipolar high-temperature-resistant field effect tube is used, when the upper protective shell 4 is required to be detached from the lower protective shell 3, the movable inner rod 602 is pushed down through the pushing column 605, so that the movable inner rod 602 moves down, the spring 604 is compressed, the movable inner rod 602 does not block the upper protective shell 4 any more, the upper protective shell 4 is pushed leftwards at the moment, the upper protective shell 4 is further pushed leftwards to slide from the two cutting a31 and the two cutting b32, the purpose of conveniently detaching the upper protective shell 4 from the lower protective shell 3 is achieved, the internal electronic component 2 is conveniently overhauled or maintained, and secondly, the cooling liquid is led in by the cooling liquid flow tube 5, so that the bipolar field effect tube 1 can be efficiently cooled during working, and the use efficiency is prevented from being influenced by high temperature.

It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a bipolar high temperature resistant field effect transistor, includes a plurality of field effect transistor (1), and a plurality of field effect transistor (1) connect in the outside of electronic components (2), its characterized in that: the electronic component (2) is movably placed in the lower protective shell (3), the upper protective shell (4) is movably inserted into the top end in the lower protective shell (3), and the lower protective shell (3) is provided with a clamping mechanism (6) which is convenient for clamping and positioning the upper protective shell (4).

2. The bipolar high temperature resistant field effect transistor of claim 1, wherein: the top of lower protecting crust (3) is fixed with two cutting a (31) that the symmetry set up and two cutting b (32) that the symmetry set up, and the vertical section of cutting a (31) and cutting b (32) all is the isosceles trapezoid structure that falls, and insert passageway a (33) with cutting a (31) matched with are all seted up to the bottom of last protecting crust (4), insert passageway b (34) with cutting b (32) matched with are all seted up to the bottom of last protecting crust (4).

3. The bipolar high temperature resistant field effect transistor of claim 1, wherein: and a cooling liquid flow tube (5) is fixed on the inner top wall of the upper protective shell (4), and a liquid inlet and a liquid outlet of the cooling liquid flow tube (5) are both extended to the outer side of the upper protective shell (4).

4. A bipolar high temperature resistant field effect transistor as claimed in claim 3, wherein: the outer side of the cooling liquid flow tube (5) is fixedly connected with a plurality of radiating fins (51), and the radiating fins (51) extend to the outer side of the upper protective shell (4).

5. The bipolar high temperature resistant field effect transistor of claim 1, wherein: the clamping mechanism (6) comprises a fixed outer rod (601) fixedly connected to the outer side of the lower protective shell (3), a movable inner rod (602) is connected in a sliding mode in an inner movable cavity of the fixed outer rod (601), the bottom end of the movable inner rod (602) is connected with the inner bottom wall of the movable cavity through a spring (604), an inclined plane is arranged at the top end of the movable inner rod (602), and a pushing column (605) is fixedly connected to the outer side of the movable inner rod (602).

6. The bipolar high temperature resistant field effect transistor of claim 5, wherein: the outer side wall of the movable inner rod (602) is fixedly connected with a sliding block (603), and the sliding block (603) is slidably connected in a sliding groove formed in the movable cavity.