CN218596118U - Infrared thermopile sensor - Google Patents

Abstract

The utility model discloses an infrared thermopile sensor relates to micro-electromechanical system technical field to solve the current problem that the absorption layer area is less, the response rate of sensor is lower. The infrared thermopile sensor comprises a substrate, a supporting layer, a thermopile layer and an absorbing layer, wherein a cavity is formed in the substrate, the supporting layer is arranged above the substrate, the thermopile layer is arranged above the supporting layer and comprises a plurality of thermoelectric arms which are connected in series, the thermoelectric arms are provided with cold ends and hot ends, the cold ends of the thermoelectric arms are connected with the substrate, bending sections exist between the cold ends and the hot ends of the thermoelectric arms, the absorbing layer is arranged above the thermopile layer, the absorbing layer is connected with the hot ends of the thermoelectric arms, and the absorbing layer is used for receiving external energy and transmitting the energy to the hot ends of the thermoelectric arms.

Description

Infrared thermopile sensor

Technical Field

The utility model relates to a micro-electromechanical system technical field especially relates to an infrared thermopile sensor.

Background

In recent years, the MEMS infrared thermopile sensor is rapidly popularized with the advantages of high sensitivity, wide temperature measurement range, small size and the like, and the product relates to numerous fields of consumer electronics, home medical treatment, industrial production and the like. A great deal of demand is met, and higher requirements are also put on the product performance, so that the thermopile sensor with high response rate and small volume is produced.

Generally, a thermopile sensing device mainly comprises a core component thermopile and an absorption layer, and under the condition of no change of a thermopile structure, the area size of the absorption layer is directly proportional to the response rate of a device. The existing commonly used infrared thermopile sensor comprises a substrate, an absorption layer and a plurality of thermocouples, wherein the hot end of each thermocouple is connected with the absorption layer, the cold end of each thermocouple is connected with the substrate, and the temperature can be detected by utilizing the thermoelectric effect (Seebeck effect). However, the absorption layer area of the existing infrared thermopile sensor is small, the response rate of the sensor is low, and when the absorption layer area is increased, the whole volume of the infrared thermopile sensor is large, so that the design requirement is not met.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide an infrared thermopile sensor to increase infrared thermopile sensor's absorbed layer area, improve infrared thermopile sensor's responsivity.

In order to achieve the above object, in a first aspect, the present invention provides an infrared thermopile sensor, including:

a substrate having a cavity therein;

a support layer disposed above the substrate;

the thermoelectric stack layer is arranged above the supporting layer and comprises a plurality of thermoelectric arms which are arranged in series, each thermoelectric arm is provided with a cold end and a hot end, the cold ends of the thermoelectric arms are connected with the substrate, and a bending section is arranged between the cold ends and the hot ends of the thermoelectric arms;

the absorption layer is arranged above the thermoelectric stack layer and is connected with the hot end of the thermoelectric arm, and the absorption layer is used for receiving external energy and transmitting the energy to the hot end of the thermoelectric arm.

By adopting the technical scheme, the thermoelectric stack layer is supported by the supporting layer, so that the thermoelectric stack layer can be more conveniently formed; the cold end of the thermoelectric arm is connected with the substrate, and the hot end of the thermoelectric arm is connected with the absorption layer, so that the energy received by the absorption layer can be transmitted to the hot end of the thermoelectric arm and transmitted to the cold end of the thermoelectric arm through the thermoelectric arm; when a bending section exists between the cold end and the hot end of the thermoelectric arm, the length space occupied by the whole thermoelectric arm can be reduced by bending the thermoelectric arm under the condition of ensuring that the length of the thermoelectric arm is not changed, the compactness of the thermopile is improved, and the horizontal distance between the absorption layer and the substrate can be further reduced, so that the area of the absorption layer can be increased and the response rate of the sensor can be improved under the condition that the whole size of the sensor is not changed or the change is small; or under the condition that the area of the absorption layer is unchanged or slightly changed, the overall size of the sensor can be reduced, so that the sensor can further meet the requirement of the microstructure.

In some possible implementations, the thermoelectric arm has a first section and a second section bent to each other, a first end of the first section is a hot end, a second end of the first section is connected to a first end of the second section, and a second end of the second section is a cold end;

the hot end of the first section and the cold end of the second section are both located on one side close to the middle of the substrate, or both located on one side far away from the middle of the substrate. Due to the arrangement, the structure of the bending section is optimized, so that the structure of the thermopile is compact, the area of the absorption layer can be increased, and/or the whole volume of the sensor can be reduced; meanwhile, the thermopile is simple in structure and convenient to process.

In some possible implementations, when the hot end of the first segment and the cold end of the second segment are both located on a side away from the middle of the substrate, the second end of the first segment and the first end of the second segment are both located on a side close to the middle of the substrate, and the second end of the first segment and the first end of the second segment are located in a projection plane of the absorption layer along a direction perpendicular to the front surface of the absorption layer. So set up, thermoelectric arm can be located the space that corresponds with the absorbed layer, utilizes the corresponding space of absorbed layer below to set up thermoelectric arm, can make partial structure and the absorbed layer of thermoelectric arm overlap in the space, and then makes the thermopile structure compacter, can further increase the area of absorbed layer and/or reduce the whole volume of sensor.

In some possible implementations, when the hot end of the first segment and the cold end of the second segment are both located on a side close to the middle of the substrate, the second end of the first segment and the first end of the second segment are both located on a side away from the middle of the substrate, and the second end of the first segment and the first end of the second segment are located in a projection plane of the substrate along a direction perpendicular to the front surface of the substrate. Due to the arrangement, the structure of the bending section is optimized, so that the structure of the thermopile is compact, the area of the absorption layer can be increased, and/or the whole volume of the sensor can be reduced; meanwhile, the thermopile is simple in structure and convenient to process.

In some possible implementation manners, the thermoelectric arm has a first section, a second section and a third section which are connected in sequence, wherein the first end of the first section is a hot end, the second end of the first section is connected with the first end of the second section, the second end of the second section is connected with the first end of the third section, and the second end of the third section is a cold end;

the first section and the third section are parallel to each other, and the hot end of the first section and the cold end of the third section both extend along one side close to the middle part of the substrate or extend along one side far away from the middle part of the substrate. So set up, the hot junction of thermoelectric arm is the same with the extending direction of cold junction, and thermopile simple structure processes the convenience.

In some possible implementation manners, the thermoelectric arm has a first section, a second section, a third section, a fourth section and a fifth section which are connected in sequence, wherein the first end of the first section is a hot end, the second end of the first section is connected with the second section, the first end of the fifth section is connected with the fourth section, and the second end of the fifth section is a cold end;

the first section, the third section and the fifth section are parallel to each other, and the hot end of the first section and the cold end of the fifth section extend in opposite directions. So set up, the hot junction of thermoelectric arm is opposite with the extending direction of cold junction, and a plurality of thermoelectric arms arrange compacter in the thermopile to further reduce the whole volume of sensor.

In some possible implementations, the thermopile layer includes four thermoelectric arm groups uniformly distributed along the circumferential direction of the support layer, each thermoelectric arm group includes four thermoelectric arms, and the four thermoelectric arms are distributed in a radial shape. So set up, optimize the mode of arranging of a plurality of thermoelectric arms in the thermopile for the sensor detects more accurately.

In some possible implementation manners, an insulating medium layer is arranged between the absorption layer and the thermopile layer, the thermopile layer is embedded in the insulating medium layer, the insulating medium layer comprises a through groove, the hot end of the thermoelectric arm is positioned in the through groove, and the absorption layer part penetrates through the through groove and is connected with the hot end of the thermoelectric arm;

the insulating medium layer is made of silicon dioxide. According to the arrangement, the absorption layer and the thermoelectric stack layer are separated through the insulating medium layer, and the heat of the absorption layer is prevented from affecting the thermoelectric arms.

In some possible implementations, the thermopile layer further includes a metal connector, and two adjacent thermoelectric arms are connected in series through the metal connector;

the material of the metal connecting piece is copper or aluminum. The arrangement is such that series connection between a plurality of thermoelectric legs can be achieved.

Drawings

The accompanying drawings, which are described herein, serve to provide a further understanding of the invention and constitute a part of this specification, and the exemplary embodiments and descriptions thereof are provided for explaining the invention without unduly limiting it. In the drawings:

FIG. 1 is a first schematic diagram of an infrared thermopile sensor of the present invention;

FIG. 2 is a first cross-sectional view of an infrared thermopile sensor of the present invention;

FIG. 3 is a second schematic diagram of the infrared thermopile sensor of the present invention;

FIG. 4 is a second cross-sectional view of the infrared thermopile sensor of the present invention;

FIG. 5 is a third schematic diagram of the infrared thermopile sensor of the present invention;

fig. 6 is a fourth schematic diagram of the infrared thermopile sensor of the present invention;

fig. 7 is a third cross-sectional view of the infrared thermopile sensor of the present invention.

Reference numerals:

1-substrate, 2-supporting layer, 3-thermopile layer, 31-thermoelectric arm, 311-hot end, 312-cold end, 32-metal connecting piece, 4-insulating medium layer, 5-absorbing layer and 6-cavity.

Detailed Description

In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

Please refer to fig. 1 to 7, the utility model provides an infrared thermopile sensor, including basement 1, support layer 2, thermopile layer 3 and absorbed layer 5, cavity 6 has in the basement 1, support layer 2 sets up in basement 1 top, thermopile layer 3 sets up in support layer 2 top, thermopile layer 3 includes the thermoelectric arm 31 of a plurality of series arrangements, thermoelectric arm 31 has cold junction 312 and hot junction 311, the cold junction 312 of thermoelectric arm 31 links to each other with basement 1, there is the bending section between the cold junction 312 of thermoelectric arm 31 and hot junction 311, absorbed layer 5 sets up in thermoelectric stack layer 3 top, absorbed layer 5 links to each other with the hot junction 311 of thermoelectric arm 31, absorbed layer 5 is used for receiving external energy and transmits energy to the hot junction 311 of thermoelectric arm 31. For example, the substrate 1 may be a bulk silicon structure, the thermoelectric arm 31 is a thermocouple structure, the material of the thermoelectric arm 31 is polysilicon, and the material of the support layer 2 may be silicon nitride; illustratively, the substrate 1 is a ring-shaped substrate 1, and the cavity 6 is a hollow structure located in the middle of the substrate 1. For example, the infrared thermopile sensor may be a MEMS (Micro Electro Mechanical System) infrared thermopile sensor, i.e., a Micro Electro Mechanical System infrared thermopile sensor, which has the advantages of small volume, high sensitivity, etc.

Under the condition of adopting the technical scheme, the thermoelectric stack layer 3 is supported by the supporting layer 2, so that the thermoelectric stack layer 3 can be more conveniently molded; the cold end 312 of the thermoelectric arm 31 is connected with the substrate 1, and the hot end 311 is connected with the absorption layer 5, so that the energy received by the absorption layer 5 can be transferred to the hot end 311 of the thermoelectric arm 31 and transferred to the cold end 312 of the thermoelectric arm 31 through the thermoelectric arm 31; when a bending section exists between the cold end 312 and the hot end 311 of the thermoelectric arm 31, the length space occupied by the whole thermoelectric arm 31 can be reduced by bending the thermoelectric arm 31 under the condition of ensuring that the length of the thermoelectric arm 31 is not changed, the compactness of the thermopile is improved, and the horizontal distance between the absorption layer 5 and the substrate 1 can be further reduced, so that the area of the absorption layer 5 can be increased and the response rate of the sensor can be improved under the condition that the whole size of the sensor is not changed or the change is small; or under the condition that the area of the absorption layer 5 is unchanged or the change is small, the whole size of the sensor can be reduced, so that the sensor can further meet the requirement of the microstructure.

As shown in fig. 1 to 4, further, the thermoelectric arm 31 has a first section and a second section bent to each other, a first end of the first section is a hot end 311, a second end of the first section is connected to a first end of the second section, and a second end of the second section is a cold end 312; the hot end 311 of the first section and the cold end 312 of the second section are both located on the side near the middle of the substrate 1, or both are located on the side away from the middle of the substrate 1. Illustratively, the thermoelectric arm 31 is an elongated strip structure, and an included angle exists between the first section and the second section of the thermoelectric arm 31, and the included angle is less than 180 degrees, for example, the included angle may be 90 degrees; by adopting the structure, the thermoelectric arm 31 is a folded angle structure formed by two bent sections, and the thermoelectric arm 31 has a simple structure and is convenient to process, so that the whole structure of the thermopile is simple and the processing is convenient; meanwhile, the thermopile has a compact structure, so that the distance between the absorption layer 5 and the substrate 1 can be reduced, the area of the absorption layer 5 can be increased under the condition that the whole size of the sensor is unchanged or the change of the whole size of the sensor is small, and the response rate of the sensor is improved; or under the condition that the area of the absorption layer 5 is unchanged or the change is small, the whole size of the sensor can be reduced, so that the sensor can further meet the requirement of the microstructure.

Further, as shown in fig. 1 and fig. 2, when the hot end 311 of the first segment and the cold end 312 of the second segment are both located on the side far from the middle of the substrate 1, the second end of the first segment and the first end of the second segment are both located on the side near to the middle of the substrate 1, and the second end of the first segment and the first end of the second segment are located in the projection plane of the absorption layer 5 in the direction perpendicular to the front surface thereof. Wherein, the front surface of the absorption layer 5 is the upper surface of the absorption layer 5 when the absorption layer 5 is flatly placed on a horizontal plane. Illustratively, the hot end 311 of the first segment is disposed close to the inner edge of the substrate 1, so that the area of the absorbent layer 5 connected to the hot end 311 can be extended to the edge position of the substrate 1, so that the area of the absorbent layer 5 is larger; the cold ends 312 of the second section are connected to the outside edges of the substrate 1 so that the temperature of the substrate 1 is at or near the temperature of the cold ends 312. Illustratively, the second end of the first segment and the first end of the second segment are toward the central position of the substrate 1, the second end and the first end of the first segment may both be located in a projected position below the absorption layer 5, and the first end and the second end of the second segment may be located in a projected position partially below the absorption layer 5. With such a structure, the thermoelectric arm 31 can be located in the space corresponding to the absorption layer 5, and the thermoelectric arm 31 is disposed in the corresponding space below the absorption layer 5, so that a part of the structure of the thermoelectric arm 31 can be spatially overlapped with the absorption layer 5, and the assembly space is further utilized, so that the thermopile structure is more compact, thereby further increasing the area of the absorption layer 5 and/or reducing the overall volume of the sensor.

Further, as shown in fig. 3 and 4, when the hot end 311 of the first segment and the cold end 312 of the second segment are both located at a side close to the middle of the substrate 1, the second end of the first segment and the first end of the second segment are both located at a side far from the middle of the substrate 1, and the second end of the first segment and the first end of the second segment are located in a projection plane of the substrate 1 in a direction perpendicular to the front surface thereof. Wherein, the front surface of the substrate 1 is the annular upper surface of the substrate 1 when the substrate 1 is flatly placed on the horizontal plane. Exemplarily, the substrate 1 has a larger width compared to the prior art and the above solutions, the distance between the inner side surface and the outer side surface of the ring is larger, the hot end 311 of the first section is connected to the absorption layer 5, the cold end 312 of the second section is connected to the inner side surface of the substrate 1, a part between the second end and the first end of the first section is located in the projection position above the substrate 1, and a part between the first end and the second end of the second section is located in the projection position above the substrate 1, so that the overall structure can be more stable. By adopting the structure, the thermoelectric arm 31 is a folded angle structure formed by two bent sections, and the thermoelectric arm 31 has a simple structure and is convenient to process, so that the whole structure of the thermopile is simple and the processing is convenient; meanwhile, the structure of the thermopile is compact, compared with the thermoelectric arms 31 which are linearly distributed in the prior art, the structure of the embodiment can reduce the distance between the absorption layer 5 and the substrate 1, and can increase the area of the absorption layer 5 and improve the response rate of the sensor under the condition that the overall size of the sensor is unchanged or slightly changed; or under the condition that the area of the absorption layer 5 is unchanged or the change is small, the whole size of the sensor can be reduced, so that the sensor can further meet the requirement of the microstructure.

As shown in fig. 5, further, the thermoelectric arm 31 has a first section, a second section and a third section which are connected in sequence, a first end of the first section is a hot end 311, a second end of the first section is connected to a first end of the second section, a second end of the second section is connected to a first end of the third section, and a second end of the third section is a cold end 312; the first and third sections are parallel to each other, and the hot end 311 of the first section and the cold end 312 of the third section both extend along a side close to the middle of the substrate 1 or both extend along a side far from the middle of the substrate 1. Illustratively, the angle between the first segment and the second segment is a right angle, and the angle between the second segment and the third segment is a right angle. By adopting the structure, the extending directions of the hot end 311 and the cold end 312 of the thermoelectric arm 31 are the same, the thermopile has simple structure and convenient processing; meanwhile, the thermoelectric arm 31 can be located in a space corresponding to the absorption layer 5, the thermoelectric arm 31 is arranged in a corresponding space below the absorption layer 5, a partial structure of the thermoelectric arm 31 can be overlapped with the absorption layer 5 in space, and the assembly space is further utilized, so that the thermopile structure is more compact, the area of the absorption layer 5 is further increased, and/or the whole volume of the sensor is reduced.

As shown in fig. 6 and 7, further, the thermoelectric arm 31 has a first section, a second section, a third section, a fourth section and a fifth section which are connected in sequence, a first end of the first section is a hot end 311, a second end of the first section is connected with the second section, a first end of the fifth section is connected with the fourth section, and a second end of the fifth section is a cold end 312; the first, third and fifth sections are parallel to each other and the hot end 311 of the first section extends in the opposite direction to the cold end 312 of the fifth section. Illustratively, one of the hot end 311 of the first section and the cold end 312 of the fifth section extends along a side near the middle of the substrate 1, and the other extends along a side away from the middle of the substrate 1; illustratively, in the first section, the second section, the third section, the fourth section and the fifth section, the included angle between two adjacent sections is a uniform right angle. By adopting the structure, the extending directions of the hot end 311 and the cold end 312 of the thermoelectric arm 31 are opposite, and the arrangement structure of the thermoelectric arm 31 is optimized, so that the arrangement of a plurality of thermoelectric arms 31 in the thermopile is more compact, and the whole volume of the sensor is further reduced; meanwhile, the thermoelectric arm 31 can be located in a space corresponding to the absorption layer 5, the thermoelectric arm 31 is arranged in a corresponding space below the absorption layer 5, a partial structure of the thermoelectric arm 31 can be overlapped with the absorption layer 5 in space, and the assembly space is further utilized, so that the thermopile structure is more compact, the area of the absorption layer 5 is further increased, and/or the whole volume of the sensor is reduced.

As shown in fig. 1 to 7, further, the thermopile layer 3 includes four groups of thermoelectric arms uniformly distributed along the circumferential direction of the support layer 2, each group of thermoelectric arms includes four thermoelectric arms 31, and the four thermoelectric arms 31 are distributed in a spoke shape. Illustratively, four groups of thermoelectric arms are respectively positioned in four directions and are in an axisymmetrical pattern; when the four thermoelectric arms 31 are distributed in a spoke shape, the four thermoelectric arms 31 are sequentially distributed in parallel along the direction extending from the center of the substrate 1 to the outer side; by adopting the structure, the arrangement mode of the thermoelectric arms 31 in the thermopile is optimized, so that the arrangement of the thermopile is more neat and compact, and the thermopile is more convenient to process; meanwhile, the temperature is detected simultaneously through the plurality of uniformly distributed thermoelectric arms, so that the sensor can detect more accurately.

As shown in fig. 2, 4 and 7, further, an insulating medium layer 4 is disposed between the absorption layer 5 and the thermopile layer 3, the thermopile layer 3 is embedded in the insulating medium layer 4, the insulating medium layer 4 includes a through slot, the hot end 311 of the pyroelectric arm 31 is located in the through slot, and a part of the absorption layer 5 passes through the through slot and is connected to the hot end 311 of the pyroelectric arm 31; the material of the insulating medium layer 4 is silicon dioxide. Illustratively, the insulating medium layer 4 is embedded with the thermopile layer 3. With this structure, the absorption layer 5 is separated from the thermopile layer 3 by the insulating medium layer 4, so that the heat of the absorption layer 5 can be prevented from affecting the thermoelectric arms 31; the dielectric layer 4 is connected to the hot terminal 311 through the through-slot to prevent the other portions of the hot arm 31 from being affected by the temperature of the absorbing layer 5.

As shown in fig. 2, 4 and 7, further, the thermopile layer 3 further includes metal connectors 32, and two adjacent thermoelectric legs 31 are connected by the metal connectors 32 to realize series connection; the material of the metal connecting member 32 is copper or aluminum. Illustratively, metal connectors 32 are respectively disposed on the hot ends 311 and the cold ends 312 of the thermoelectric arms 31, the hot ends 311 of the two thermoelectric arms 31 are connected by the metal connectors 32, the cold ends 312 of the two thermoelectric arms 31 are connected by the metal connectors 32, and the plurality of thermoelectric arms 31 are connected in series by the metal connectors 32. With this structure, a plurality of the thermoelectric legs 31 can be connected in series.

The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (9)

1. An infrared thermopile sensor, comprising:

a substrate having a cavity therein;

a support layer disposed over the substrate;

the thermoelectric stack layer is arranged above the supporting layer and comprises a plurality of thermoelectric arms which are arranged in series, the thermoelectric arms are provided with cold ends and hot ends, the cold ends of the thermoelectric arms are connected with the substrate, and a bending section is arranged between the cold ends and the hot ends of the thermoelectric arms;

the absorption layer is arranged above the thermoelectric stack layer, connected with the hot end of the thermoelectric arm and used for receiving external energy and transmitting the energy to the hot end of the thermoelectric arm.

2. The infrared thermopile sensor of claim 1, wherein the thermopile arm has first and second segments that are bent over one another, a first end of the first segment being a hot end, a second end of the first segment being connected to a first end of the second segment, a second end of the second segment being a cold end;

the hot end of the first section and the cold end of the second section are both located on one side close to the middle of the substrate, or both located on one side far away from the middle of the substrate.

3. The infrared thermopile sensor of claim 2, wherein when the hot end of the first segment and the cold end of the second segment are both located on a side away from the central portion of the substrate, the second end of the first segment and the first end of the second segment are both located on a side close to the central portion of the substrate, and the second end of the first segment and the first end of the second segment are both located in a plane projected by the absorbing layer in a direction perpendicular to its front surface.

4. The infrared thermopile sensor of claim 2, wherein when the hot end of the first segment and the cold end of the second segment are both located on a side near the middle of the substrate, the second end of the first segment and the first end of the second segment are both located on a side away from the middle of the substrate, and the second end of the first segment and the first end of the second segment are both located in a plane projected from the substrate in a direction perpendicular to its front surface.

5. The infrared thermopile sensor of claim 1, wherein the thermopile arm has a first, second, and third segment connected in series, the first end of the first segment being a hot end, the second end of the first segment being connected to the first end of the second segment, the second end of the second segment being connected to the first end of the third segment, the second end of the third segment being a cold end;

the first section and the third section are parallel to each other, and the hot end of the first section and the cold end of the third section both extend along one side close to the middle part of the substrate or extend along one side far away from the middle part of the substrate.

6. The infrared thermopile sensor of claim 1, wherein the thermopile arm has a first, second, third, fourth, and fifth segment connected in sequence, a first end of the first segment being a hot end, a second end of the first segment being connected to the second segment, a first end of the fifth segment being connected to the fourth segment, a second end of the fifth segment being a cold end;

the first section, the third section and the fifth section are parallel to each other, and the hot end of the first section and the cold end of the fifth section extend in opposite directions.

7. The infrared thermopile sensor of any one of claims 1-6, wherein the thermopile layer comprises four groups of four thermopile arms uniformly distributed circumferentially along the support layer, each group comprising four of the thermopile arms, and wherein the four thermopile arms are distributed in a spoke-like manner.

8. The infrared thermopile sensor of any one of claims 1-6, wherein an insulating medium layer is disposed between the absorber layer and the thermopile layer, the thermopile layer being embedded within the insulating medium layer, the insulating medium layer including a through slot, the hot end of the thermopile arm being located within the through slot, the absorber layer partially passing through the through slot to connect to the hot end of the thermopile arm;

the insulating medium layer is made of silicon dioxide.

9. The infrared thermopile sensor of any one of claims 1-6, wherein the thermopile layer further comprises a metal connector, and two adjacent thermopile arms are connected in series via the metal connector;

the metal connecting piece is made of copper or aluminum.

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