CN214502684U - MEMS thermopile sensor - Google Patents
MEMS thermopile sensor Download PDFInfo
- Publication number
- CN214502684U CN214502684U CN202120834069.XU CN202120834069U CN214502684U CN 214502684 U CN214502684 U CN 214502684U CN 202120834069 U CN202120834069 U CN 202120834069U CN 214502684 U CN214502684 U CN 214502684U
- Authority
- CN
- China
- Prior art keywords
- metal
- thermopile
- thermocouple
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002955 isolation Methods 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000009434 installation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 107
- 238000001514 detection method Methods 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000005678 Seebeck effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
Images
Abstract
The utility model discloses a MEMS thermopile sensor. The MEMS thermopile sensor includes: the first substrate is provided with a plurality of mounting positions which are arranged on the first substrate in a ring shape; the plurality of thermopile units are correspondingly arranged on the plurality of installation positions; wherein the thermopile unit includes: the second substrate is made of high-resistance silicon; a first thermocouple layer disposed on the second substrate, the first thermocouple layer including a first semiconductor and a first metal; the isolation layer is laid on the first thermocouple layer; the second thermocouple layer is arranged on the isolation layer and comprises a second semiconductor and a second metal, the second semiconductor and the first metal are symmetrical relative to the isolation layer, and the second metal and the first semiconductor are symmetrical relative to the isolation layer; the first metal and the corresponding second semiconductor are connected to form a thermocouple, the second metal and the corresponding first semiconductor are connected to form a thermocouple, and adjacent thermocouples are connected in series. The utility model discloses technical scheme is favorable to improving MEMS thermopile sensor's detectivity.
Description
Technical Field
The utility model relates to a corner and limit point location technical field, in particular to MEMS thermopile sensor.
Background
Thermocouples are a widely used temperature sensor and are also used to convert thermal potential differences into potential differences. The working principle of the thermoelectric power generation device is based on the thermoelectric effect or the Seebeck effect discovered by Thomas Seebeck in 1821, and in a loop formed by two different metal materials A and B, if the temperatures T1 and T2 at the junction of the two metals are different, a thermoelectromotive force is generated in the loop. The thermopile is formed by connecting a plurality of thermocouples in series, and the open-circuit output voltage of the thermopile is the sum of the thermoelectromotive forces of all the thermocouples connected in series when the temperature difference is the same. Under the same electric signal detection condition, the minimum temperature difference which can be detected by the thermopile is l/n of a single thermocouple, so that the temperature resolution is enhanced. The MEMS thermopile can realize the miniaturization of the thermopile, can be applied to portable devices, and can further improve the resolution of temperature since a large number of thermocouples can be integrated. The MEMS thermopile infrared detector is an uncooled infrared detector based on the Seebeck effect. However, the structure of the existing MEMS thermopile sensor is not reasonable, so that the temperature resolution and stability of the thermopile detector are reduced due to the influence of the ambient temperature around the sensor.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a MEMS thermopile sensor aims at improving MEMS thermopile sensor's temperature resolution ratio and reliability.
To achieve the above object, the present invention provides a MEMS thermopile sensor, including:
the device comprises a first substrate, a second substrate and a third substrate, wherein a plurality of mounting positions are arranged on the first substrate and are arranged in a ring shape;
the plurality of thermopile units are correspondingly arranged on the plurality of installation positions;
wherein the thermopile unit includes:
a second substrate composed of high-resistance silicon;
a first thermocouple layer disposed on the second substrate, the first thermocouple layer comprising a first semiconductor and a first metal;
the isolation layer is laid on the first thermocouple layer;
a second thermocouple layer disposed on the isolation layer, the second thermocouple layer including a second semiconductor and a second metal, the second semiconductor and the first metal being symmetric with respect to the isolation layer, the second metal and the first semiconductor being symmetric with respect to the isolation layer; the first metal and the corresponding second semiconductor are connected to form a thermocouple, the second metal and the corresponding first semiconductor are connected to form a thermocouple, and adjacent thermocouples are connected in series; the metal and semiconductor connection end of the first thermocouple layer and the second thermocouple layer is the hot end of the thermopile unit, and the end opposite to the hot end of the thermopile unit is the cold end;
the device comprises a positive detection electrode and a negative detection electrode, wherein at least part of the thermopile units are connected in series, the positive detection electrode is connected with the head part of a thermocouple of one thermopile unit, and the negative detection electrode is connected with the tail part of the thermocouple of the other thermopile unit.
Optionally, the hot ends of all the thermopile units are close to the middle of the ring, and the cold ends of all the thermopile units extend from the middle of the ring to the periphery in a diffused mode.
Optionally, the cold ends of all the thermopile units are close to the middle of the ring, and the hot ends of all the thermopile units extend from the middle of the ring to the periphery in a diffused mode.
Optionally, the MEMS thermopile sensor further includes a heat conduction layer and an insulating protection layer, the heat conduction layer is disposed on the first substrate, an inner diameter of an annular shape of the insulating protection layer is smaller than an inner diameter of an annular shape of the heat conduction layer, and the insulating protection layer covers the heat conduction layer, so that the first substrate, the heat conduction layer, and the insulating protection layer are maintained to form a heat insulation cavity; the thermopile unit is arranged in the heat insulation cavity.
Optionally, the end of the first metal is bent from the edge of the isolation layer to be connected with the symmetric second semiconductor; the end part of the second metal is bent from the edge of the isolation layer and extends to be connected with the symmetrical first semiconductor;
the first metal of the first thermocouple layer is connected with one end, far away from the hot end, of the first semiconductor through metal;
the second metal of the second thermocouple layer is connected with one end, far away from the hot end, of the second semiconductor through metal.
Optionally, the thermopile unit comprises a positive electrode and a negative electrode, the positive electrode is connected with the head part of the thermocouple, and the negative electrode is connected with the tail part of the thermocouple; and/or the presence of a gas in the gas,
the isolation layer is made of a silicon nitride material.
Optionally, the number of the first metal and the first semiconductor is equal, and the number of the second metal and the second semiconductor is equal.
Optionally, the MEMS thermopile sensor includes a first connection circuit and a second connection circuit independent of each other, the first connection circuit connecting all the thermopile units in series; the second connection circuit connects some of the thermopile units in series at intervals.
Optionally, the mounting location comprises a mounting slot, the second substrate being mounted in the mounting slot;
and the thickness of the second substrate is equal to the groove depth of the mounting groove.
Optionally, the edge of the isolation layer protrudes beyond the edges of the first thermocouple layer and the second thermocouple layer, and a gap is formed at the joint of the first metal and the first semiconductor and at the joint of the second metal and the second semiconductor.
In the technical scheme of the utility model, the thermopile unit is arranged to comprise the second substrate, the first thermocouple layer, the second thermocouple layer and the isolation layer for isolating the first thermocouple layer and the second thermocouple layer, so that a high-density thermocouple can be formed in a unit area, and the output voltage of the thermopile unit can be effectively increased; in addition, the number of the thermocouples can be further increased by arranging the plurality of thermopile units, so that the detection sensitivity and reliability of the MEMS thermopile sensor can be greatly improved; in addition, because the quantity of the thermoelectric pushing unit is a plurality of, the quantity of the access circuit can be selected, thereby controlling the effective number of the thermopile units, being convenient for controlling the detection precision of the MEMS thermopile sensor, when the individual thermopile units are in failure, the unit can be directly replaced, the whole MEMS thermopile sensor is prevented from being replaced, and the maintenance cost of the MEMS thermopile sensor is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a MEMS thermopile sensor of the present invention;
FIG. 2 is a schematic diagram of another embodiment of a MEMS thermopile sensor of the present invention;
FIG. 3 is a schematic diagram of an embodiment of a thermopile unit of the MEMS thermopile sensor of the present invention;
FIG. 4 is a schematic diagram of another embodiment of a thermopile unit of a MEMS thermopile sensor of the present invention;
FIG. 5 is a schematic diagram of a thermopile unit of a MEMS thermopile sensor according to yet another embodiment of the present invention;
FIG. 6 is a schematic diagram of a further embodiment of a thermopile unit of a MEMS thermopile sensor of the present invention;
fig. 7 is a schematic flow chart of an embodiment of the MEMS thermopile sensor of the present invention.
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit ly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, "and/or" in the whole text includes three schemes, taking a and/or B as an example, including a technical scheme, and a technical scheme that a and B meet simultaneously; in addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model mainly provides a MEMS thermopile sensor for detect the outside temperature, mainly redesign MEMS thermopile sensor's structure, make the detection galvanic couple quantity in its unit area obtain increasing, be favorable to improving MEMS thermopile sensor's detectivity.
The specific structure of the MEMS thermopile sensor will be mainly described below.
Referring to fig. 1 to 7, in an embodiment of the present invention, the MEMS thermopile sensor includes:
a first substrate 100, wherein a plurality of mounting positions 110 are arranged on the first substrate 100, and the plurality of mounting positions 110 are arranged on the first substrate 100 in a ring shape;
a plurality of thermopile units 200, the plurality of thermopile units 200 being correspondingly mounted on the plurality of mounting sites 110;
wherein the thermopile unit 200 includes:
a second substrate 210, the second substrate 210 being made of high-resistance silicon;
a first thermocouple layer disposed on the second substrate 210, the first thermocouple layer including a first semiconductor 260 and a first metal 250;
an isolation layer 270, wherein the isolation layer 270 is laid on the first thermocouple layer;
a second thermocouple layer disposed on the isolation layer 270, the second thermocouple layer including a second semiconductor 260 and a second metal 250, the second semiconductor 260 and the first metal 250 being symmetric with respect to the isolation layer 270, the second metal 250 and the first semiconductor 260 being symmetric with respect to the isolation layer 270; the first metal 250 is connected with the corresponding second semiconductor 260 to form a thermocouple, the second metal 250 is connected with the corresponding first semiconductor 260 to form a thermocouple, and adjacent thermocouples are connected in series; the end of the first thermocouple layer and the second thermocouple layer, which is connected with the semiconductor 260, is the hot end of the thermopile unit 200, and the end opposite to the hot end of the thermopile unit 200 is the cold end;
and the positive detection electrode and the negative detection electrode are connected in series, at least part of the thermopile units 200 are connected in series, the positive detection electrode is connected with the thermocouple head part of one thermopile unit 200, and the negative detection electrode is connected with the thermocouple tail part of the other thermopile unit 200.
Specifically, in the present embodiment, the shape of the first substrate 100 may be many, such as square, triangle, etc., and in order to improve the utilization rate of the first substrate 100, the first substrate 100 may be configured to be circular. The material of the first substrate 100 may be many, such as the semiconductor 260, for example, high-resistance silicon. The mounting locations 110 may also be in a variety of forms, such as mounting holes, mounting slots, or mounting bosses. The plurality of mounting locations 110 may be spaced apart from each other or may be connected to each other. In the present embodiment, taking the mounting groove as an example, the second substrate 210 of the thermopile unit 200 may be mounted in the mounting groove. The thermopile unit 200 may be in many forms, and may be formed as a plurality of thermocouples, and may be connected in series to form a thermopile. The thermopile unit 200 in this embodiment includes a second substrate 210, and the shape of the second substrate 210 may be various, such as circular, triangular, square, etc., and in this embodiment, the square is taken as an example. When the mounting position 110 is a square slot, the square second substrate 210 can ensure that the mounting direction of the thermopile unit 200 is correct, and prevent the cold end and the hot end of the thermopile unit 200 from shifting.
The first metal 250 and the first semiconductor 260 of the first thermocouple layer are laid on the second substrate 210 at intervals, and the shapes of the first metal 250 and the first semiconductor 260 can be many, and in order to improve the utilization rate of the first metal and the first semiconductor, the first metal 250 and the first semiconductor 260 are arranged in a strip shape, for example, so that more couples are arranged in a unit area. The insulating layer is arranged in a square shape and completely isolates the first thermocouple layer from the second thermocouple layer. It is noted that in some embodiments, to ensure that the first and second thermocouple layers are isolated, the perimeter of the isolation layer 270 protrudes beyond the edges of the first and second thermocouple layers. The isolation layer 270 may be made of silicon nitride (Si)3N4) Is made of materials.
The first metal 250 may be connected to the corresponding second semiconductor 260 to form a thermocouple, and the second metal 250 may be connected to the corresponding first semiconductor 260 to form a thermocouple. Of course, in some embodiments, the metal 250 or the semiconductor 260 may be elongated, and the elongated portion may be connected to the corresponding semiconductor 260 or the metal 250. Specifically, the end of the first metal 250 is bent and extended from the edge of the isolation layer 270 to connect with the symmetric second semiconductor 260; the end of the second metal 250 is bent from the edge of the isolation layer 270 to be connected to the symmetric first semiconductor 260; the first metal 250 of the first thermocouple layer and one end of the first semiconductor 260 far away from the hot end are connected through the metal 250; the second metal 250 of the second thermocouple layer and the end of the second semiconductor 260 away from the hot end are connected by the metal 250. Correspondingly, where the end of the first metal 250 is connected to the end of the second semiconductor 260, the isolation layer 270 does not extend beyond the first and second thermocouple layers, but is flush with the end of the first metal 250 and the end of the second semiconductor 260. Of course, in some embodiments, an avoidance opening may be further disposed at a corresponding position of the isolation board layer, so that the end of the first metal 250 is connected to the end of the second semiconductor 260, thereby facilitating the compactness of the structure.
In some embodiments, to improve the ease of connection of the thermopile unit 200, the thermopile unit 200 includes a positive electrode 220 and a negative electrode 230, the positive electrode 220 being connected to the head of the thermocouple, and the negative electrode 230 being connected to the tail of the thermocouple. The positive electrode 220 is connected to the head of the first thermocouple of the thermopile unit 200, and the negative electrode 230 is connected to the tail of the last thermocouple of the thermopile unit 200, and the adjacent thermocouples are connected in series. By the arrangement of the positive electrode 220 and the negative electrode 230, a potential difference of the thermopile unit 200 is formed at both ends of the positive electrode 220 and the negative electrode 230.
With respect to the number of the first metal 250, the first semiconductor 260, the second metal 250, and the second semiconductor 260, in order to form a complete thermocouple regardless of the single thermopile unit 200 or the entire MEMS thermopile sensor. The number of the first metal 250 and the first semiconductor 260 is equal, the number of the second metal 250 and the second semiconductor 260 is equal, and the number of the first metal 250 and the second metal 250 is equal. In this manner, a high efficiency of forming the thermopile can be ensured for each thermopile unit 200.
In this embodiment, the thermopile unit 200 is configured to include the second substrate 210, the first thermocouple layer, the second thermocouple layer, and the isolation layer 270 for isolating the first thermocouple layer from the second thermocouple layer, so that high-density thermocouples can be formed in a unit area, and thus the output voltage of the thermopile unit 200 can be effectively increased; in addition, the number of thermocouples can be further increased by arranging the plurality of thermopile units 200, so that the detection sensitivity and reliability of the MEMS thermopile sensor can be greatly improved; in addition, because the quantity of the thermoelectric push unit has a plurality of, can select the quantity of access circuit to the effective number of control thermopile unit 200 is convenient for control MEMS thermopile sensor's detection precision, when individual thermopile unit 200 broke down, can directly change this unit, avoided changing whole MEMS thermopile sensor, thereby reduces MEMS thermopile sensor's maintenance cost.
In some embodiments, to further improve the detection accuracy of the MEMS thermopile sensor, interactions between thermopile units 200 are avoided. The hot ends of all the thermopile units 200 are close to the middle of the ring, and the cold ends of all the thermopile units 200 are extended from the middle of the ring to the periphery in a diffused mode. Therefore, the area surrounded by the hot end can be used for accurately sensing the temperature.
In other embodiments, the cold ends of all thermopile units 200 are located near the middle of the ring, and the hot ends of all thermopile units 200 extend from the middle of the ring to the periphery in a diffused manner. The temperature can be sensed with a region on the periphery of the hot end. Set up through concentrating the hot junction with thermopile unit 200 and cold junction, be favorable to thermopile unit 200 combined action, improve the sensing precision of temperature.
In some embodiments, for example, to improve the detection accuracy of the MEMS thermopile sensor, the MEMS thermopile sensor further includes a heat conducting layer and an insulating protection layer, the heat conducting layer is disposed on the first substrate 100, an annular inner diameter of the insulating protection layer is smaller than an annular inner diameter of the heat conducting layer, and the insulating protection layer covers the heat conducting layer, so that the first substrate 100, the heat conducting layer, and the insulating protection layer form a heat insulation cavity; the thermopile unit 200 is disposed within the insulating cavity.
In some embodiments, to improve the adaptability of the MEMS thermopile sensor, the MEMS thermopile sensor includes a first connection circuit and a second connection circuit independent of each other, the first connection circuit connecting all the thermopile units 200 in series; the second connection circuit connects part of the thermopile units 200 in series at intervals. Under different working conditions, different detection precision and detection speed are required, and a user can select to switch on the first connecting circuit or the second connecting circuit through the arrangement of the first connecting circuit and the second connecting circuit. All the thermopile units 200 are connected to the first connection circuit, and in this case, the MEMS thermopile sensor has the strongest detection capability and the highest detection sensitivity. In the case where a part of the thermopile unit 200 is separately connected to the second connection circuit, the detection speed of the MEMS thermopile sensor is effectively increased.
In some embodiments, to improve the compactness of the MEMS thermopile sensor structure, the mounting site 110 includes a mounting slot into which the second substrate 210 is mounted; and, the thickness of the second substrate 210 is equal to the groove depth of the mounting groove. When the second substrate 210 is mounted in the mounting recess, the top of the second substrate 210 is flush with the top of the first substrate 100. The installation of the thermopile unit 200 is stable and reliable, meanwhile, the space is reasonably utilized, and the connection compactness of the thermopile unit 200 and other parts of the MEMS thermopile sensor is improved.
The utility model discloses still provide a production method of MEMS thermopile sensor, this production method of MEMS thermopile sensor for produce MEMS thermopile sensor, this MEMS thermopile sensor's concrete structure refers to above-mentioned embodiment, because this work piece snatchs the method and has adopted all technical scheme of above-mentioned all embodiments, consequently has all beneficial effects that the technical scheme of above-mentioned embodiment brought at least, and here is no longer repeated one by one.
The manufacturing method of the MEMS thermopile sensor comprises the following steps:
providing a second substrate 210, and disposing a positive electrode 220 and a negative electrode 230 on the second substrate 210;
a first metal 250 and a first semiconductor 260 are provided in a stripe shape on the second substrate 210 to form a first thermocouple layer;
an isolation layer 270 is arranged on the first thermocouple layer;
a strip-shaped second metal 250 and a strip-shaped second semiconductor 260 are arranged on the isolation layer 270, the second metal 250 is symmetrical to the first semiconductor 260, and the second semiconductor 260 is symmetrical to the first metal 250 to form a thermopile unit 200;
forming a mounting site 110 on a first substrate 100;
forming a heat conductive layer and mounting the heat conductive layer onto the first substrate 100;
mounting the thermopile unit 200 to the mounting site 110;
and forming an insulating protective layer, and covering the insulating protective layer on the top of the heat conducting layer.
The above only be the preferred embodiment of the utility model discloses a not consequently restriction the utility model discloses a patent range, all are in the utility model discloses a conceive, utilize the equivalent structure transform of what the content was done in the description and the attached drawing, or direct/indirect application all is included in other relevant technical field the utility model discloses a patent protection within range.
Claims (10)
1. A MEMS thermopile sensor, comprising:
the device comprises a first substrate, a second substrate and a third substrate, wherein a plurality of mounting positions are arranged on the first substrate and are arranged in a ring shape;
the plurality of thermopile units are correspondingly arranged on the plurality of installation positions;
wherein the thermopile unit includes:
a second substrate composed of high-resistance silicon;
a first thermocouple layer disposed on the second substrate, the first thermocouple layer comprising a first semiconductor and a first metal;
the isolation layer is laid on the first thermocouple layer;
a second thermocouple layer disposed on the isolation layer, the second thermocouple layer including a second semiconductor and a second metal, the second semiconductor and the first metal being symmetric with respect to the isolation layer, the second metal and the first semiconductor being symmetric with respect to the isolation layer; the first metal and the corresponding second semiconductor are connected to form a thermocouple, the second metal and the corresponding first semiconductor are connected to form a thermocouple, and adjacent thermocouples are connected in series; the metal and semiconductor connection end of the first thermocouple layer and the second thermocouple layer is the hot end of the thermopile unit, and the end opposite to the hot end of the thermopile unit is the cold end;
the device comprises a positive detection electrode and a negative detection electrode, wherein at least part of the thermopile units are connected in series, the positive detection electrode is connected with the head part of a thermocouple of one thermopile unit, and the negative detection electrode is connected with the tail part of the thermocouple of the other thermopile unit.
2. The MEMS thermopile sensor of claim 1, wherein the hot ends of all of the thermopile units are disposed toward the middle of the ring, and the cold ends of all of the thermopile units extend from the middle of the ring to the periphery.
3. The MEMS thermopile sensor of claim 1, wherein the cold ends of all of the thermopile units are located toward the middle of the ring, and the hot ends of all of the thermopile units extend from the middle of the ring to the periphery.
4. The MEMS thermopile sensor of claim 1, further comprising a thermally conductive layer and an insulating protective layer in an annular arrangement, the thermally conductive layer disposed on the first substrate, the insulating protective layer having an annular inner diameter less than an annular inner diameter of the thermally conductive layer, the insulating protective layer overlying the thermally conductive layer such that the first substrate, the thermally conductive layer, and the insulating protective layer maintain an insulating cavity; the thermopile unit is arranged in the heat insulation cavity.
5. The MEMS thermopile sensor of claim 1, wherein the end of the first metal extends from an edge bend of the isolation layer to its symmetric second semiconductor connection; the end part of the second metal is bent from the edge of the isolation layer and extends to be connected with the symmetrical first semiconductor;
the first metal of the first thermocouple layer is connected with one end, far away from the hot end, of the first semiconductor through metal;
the second metal of the second thermocouple layer is connected with one end, far away from the hot end, of the second semiconductor through metal.
6. The MEMS thermopile sensor of claim 1, wherein the thermopile unit comprises a positive electrode connected to a head portion of a thermocouple and a negative electrode connected to a tail portion of the thermocouple; and/or the presence of a gas in the gas,
the isolation layer is made of a silicon nitride material; and/or the presence of a gas in the gas,
the edge of the isolation layer protrudes out of the edges of the first thermocouple layer and the second thermocouple layer.
7. The MEMS thermopile sensor of claim 1, wherein the first metal and the first semiconductor are equal in number, the second metal and the second semiconductor are equal in number, and the first metal and the second metal are equal in number.
8. The MEMS thermopile sensor of any one of claims 1 to 7, comprising a first connection circuit and a second connection circuit independent of each other, the first connection circuit connecting all the thermopile units in series; the second connection circuit connects some of the thermopile units in series at intervals.
9. The MEMS thermopile sensor of any one of claims 1 to 7, wherein the mounting location includes a mounting slot in which the second substrate is mounted;
and the thickness of the second substrate is equal to the groove depth of the mounting groove.
10. The MEMS thermopile sensor of any one of claims 1 to 7, wherein the edges of the isolation layer protrude beyond the edges of the first and second thermocouple layers, and wherein gaps are formed at the junction of the first metal and the first semiconductor and at the junction of the second metal and the second semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120834069.XU CN214502684U (en) | 2021-04-22 | 2021-04-22 | MEMS thermopile sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120834069.XU CN214502684U (en) | 2021-04-22 | 2021-04-22 | MEMS thermopile sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214502684U true CN214502684U (en) | 2021-10-26 |
Family
ID=78203991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120834069.XU Active CN214502684U (en) | 2021-04-22 | 2021-04-22 | MEMS thermopile sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214502684U (en) |
-
2021
- 2021-04-22 CN CN202120834069.XU patent/CN214502684U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113108922A (en) | MEMS thermopile sensor and method of making same | |
| US5056929A (en) | Temperature compensation type infrared sensor | |
| CN102598328B (en) | Use the thermoelectric device of semiconductor technology | |
| US6597051B2 (en) | Thermoelectric infrared detector | |
| US6877895B2 (en) | Fire sensor | |
| CN214502684U (en) | MEMS thermopile sensor | |
| CN103617997A (en) | Infrared sensing chip | |
| US6863438B2 (en) | Microstructured thermosensor | |
| JP2000065639A (en) | Infrared sensor | |
| CN116773051A (en) | High-temperature heat flow sensor | |
| JP5224089B2 (en) | Thermal sensor | |
| CN205843739U (en) | Air flow sensor | |
| KR20010006523A (en) | Electric supply source for semiconductor components | |
| CN205483281U (en) | Cooking pot , cooking device and temperature sensor | |
| CN107202646A (en) | A kind of temp difference measurer for microwave black-body surface | |
| CN206974548U (en) | A kind of thermocouple of dual-layer stereo structure | |
| CN217280848U (en) | MEMS thermoelectric detection chip and thermoelectric detection instrument | |
| CN208109267U (en) | A kind of photovoltaic panel surveys the thin film sensor of radiant heat flux | |
| KR100912669B1 (en) | Device for measuring heat transfer rate | |
| CN202433110U (en) | Micromachine temperature sensor structure | |
| CN110282597A (en) | A kind of stack thermoelectric pile of hybrid connected structure | |
| JP3235361B2 (en) | Infrared detector | |
| CN201945385U (en) | Sensor with thermocouple and thermal resistance being armored integrally | |
| CN114720509B (en) | Gas detection assembly and preparation method thereof | |
| CN218865183U (en) | Flow sensor chip based on MEMS technology and flow sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 100-17 Dicui Road, Liyuan Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: WUXI SENCOCH SEMICONDUCTOR Co.,Ltd. Address before: 214000 north side of 3 / F podium, building A10, No. 777, Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: WUXI SENCOCH SEMICONDUCTOR Co.,Ltd. |