CN218585962U

CN218585962U - Module sealing shell and high-voltage IGBT module

Info

Publication number: CN218585962U
Application number: CN202222220448.7U
Authority: CN
Inventors: 雷鸣; 姚二现; 牟哲仪
Original assignee: Nanruilianyan Semiconductor Co ltd
Current assignee: Nanruilianyan Semiconductor Co ltd
Priority date: 2022-08-23
Filing date: 2022-08-23
Publication date: 2023-03-07
Anticipated expiration: 2032-08-23

Abstract

The utility model provides a module seal shell and high pressure IGBT module on the manufacturing cost's that does not increase the shell basis, changes the local structure of shell, makes shell and epoxy's combination area increase to eliminate epoxy and the poor problem of external leakproofness, add the barrier design in local position, reduce the volume of pouring of silica gel, reduce manufacturing cost. The method comprises the following steps: the module comprises a base plate, a side shell, a cover plate and corresponding module components, wherein the bottom of the side shell is hermetically connected with the base plate; the top of the side shell is hermetically connected with the cover plate; the inboard of lateral part shell is equipped with the U-shaped structure, the one end that the U-shaped structure is close to the lateral part shell is epoxy barrier, and the other end is the silica gel barrier, epoxy barrier highly be greater than the silica gel barrier, the chamber is filled for silica gel in the region between the silica gel barrier, silica gel fills the chamber top and fill the chamber for epoxy between epoxy barrier and the silica gel barrier.

Description

Module sealing shell and high-voltage IGBT module

Technical Field

The patent of the utility model relates to a power semiconductor device field especially relates to a module seal shell and high-pressure IGBT module.

Background

An IGBT (insulated gate bipolar transistor) can withstand high voltage and supply large current, and is convenient to control, and is a core device of power electronic equipment. Traditional IGBT power module uses silica gel to realize the isolation with external environment, and can have higher requirement to the leakproofness in offshore wind power generation field, not only will prevent the entering of steam when inoperative, will prevent the erosion of salt atmosphere and sulphide simultaneously. The current idea to solve this problem is to enhance the corrosion resistance on the IGBT chip guard ring or to improve the sealing of the package. The difficulty and cost of improving the hermeticity of the package is relatively low, so most manufacturers use the method to manufacture modules used by offshore wind power. Epoxy re-poured on silicone is one of the more common solutions.

In the prior art, the epoxy resin is filled after the silica gel is filled, and the height of the silica gel is at least 2mm higher than that of the gate bonding wire. Silica gel has the phenomenon of climbing to glue at the in-process of pouring into to make the area that epoxy and shell combine reduce, sealing strength reduces, can appear the leakproofness problem even. After the sealing performance of the module is in problem, the module is easy to lose effectiveness in the application of offshore wind power.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to overcome not enough among the prior art, provide a module seal shell and high-pressure IGBT module, on the manufacturing cost's that does not increase the shell basis, change the local structure of shell, make shell and epoxy's combination area increase to eliminate epoxy and the poor problem of external leakproofness, add the barrier design in local position, reduce the perfusion volume of silica gel, reduce manufacturing cost.

For solving the prior art problem, the utility model discloses a module seal shell, include: the bottom of the side shell is hermetically connected with the base plate; the top of the side shell is hermetically connected with the cover plate; the inboard of lateral part shell is equipped with the U-shaped structure, the one end that the U-shaped structure is close to the lateral part shell is epoxy barrier, and the other end is the silica gel barrier, epoxy barrier highly be greater than the silica gel barrier, the chamber is filled for silica gel in the region between the silica gel barrier, silica gel fills the chamber top and fill the chamber for epoxy between epoxy barrier and the silica gel barrier.

Furthermore, a barrier structure is arranged between the U-shaped structure and the side shell.

Furthermore, the base plate is connected with the side shell through sealing glue.

Further, the substrate is a copper substrate.

Correspondingly, the high-voltage IGBT module is provided with the module sealing shell, components of the high-voltage IGBT module are arranged in an inner cavity of the sealing shell, and terminals of the high-voltage IGBT module are arranged on the outer side of the sealing shell; the silica gel perfusion cavity is filled with silica gel; the epoxy resin perfusion cavity is perfused with epoxy resin.

Further, the components of the high voltage IGBT module include: a plurality of DBC liner plates, chips, PCB boards and gate pole bonding wires; the DBC lining plate is welded on the substrate through welding fluxes, the chips are welded on the substrate, the chips are connected through bonding wires, the PCB is arranged on the substrate, and the PCB is connected with the DBC lining plate through a gate electrode bonding wire.

Furthermore, the pouring height of the silica gel is higher than that of the gate electrode bonding wire

Furthermore, the terminals of the high-voltage IGBT module comprise signal terminals and power terminals, one ends of the signal terminals extend out of the cover plate, the other ends of the signal terminals are connected with the PCB, and the signal terminals are connected with the signal lines of the chip through gate bonding wires; one end of the power terminal extends out of the cover plate, and the other end of the power terminal is connected with the DBC lining plate.

Further, the signal terminal is connected with the PCB board in a welding mode.

Further, the power terminal is connected with the DBC liner plate in a welding mode.

The utility model discloses beneficial effect who has:

through the design of adding the U-shaped structure on the side edge of the shell and adding the barrier structure locally, the failure caused by insufficient sealing area of epoxy is avoided, the filling amount of silica gel is reduced, and the manufacturing cost is saved.

Drawings

FIG. 1 is a schematic cross-sectional view of the present invention;

FIG. 2 is a schematic longitudinal cross-sectional view of the present invention.

1. A substrate; 2. welding flux; 3, DBC lining plate; 4. sealing glue; 5. a chip; 6. a bonding wire; 7. a side housing; 8, PCB board; 9. a gate bonding wire; 10. silica gel; 11. an epoxy resin; 12. a signal terminal; 13. a power terminal; 14. a cover plate; 15. a U-shaped structure; 16. a barrier structure; 15-1, an epoxy barrier; 15-2, a silica gel blocking part; .

Detailed Description

The present invention will be further described with reference to the accompanying drawings. The following examples are only used to illustrate the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.

As shown in fig. 1-2, the present invention provides a module seal housing, comprising: a base plate 1, a side shell 7 and a cover plate 14, wherein the base plate 1 is a copper base plate. The bottom of the side shell 7 is hermetically connected with the substrate 1; the top of the side shell 7 is hermetically connected with a cover plate 14; the inner side of the lateral part shell 7 is provided with a U-shaped structure 15, one end of the U-shaped structure 15, which is close to the lateral part shell 7, is provided with an epoxy resin blocking part 15-1, the other end of the U-shaped structure is provided with a silica gel blocking part 15-2, the height of the epoxy resin blocking part 15-1 is greater than that of the silica gel blocking part 15-2, the area between the silica gel blocking parts 15-2 is a silica gel filling cavity, and when silica gel 10 is filled, the filling height does not exceed the top end of the silica gel blocking part 15-2, so that the phenomenon of gel climbing is avoided; the silica gel fills the chamber top and for epoxy fills the chamber between epoxy barrier 15-1 and the silica gel barrier 15-2, can cover silica gel 10 completely when filling epoxy 11, keeps sufficient area of contact with lateral part shell 7 simultaneously, forms the locking through U-shaped structure 15 simultaneously.

A barrier structure 16 is arranged between the U-shaped structure 15 and the lateral shell 7, so that the filling amount of silica gel is reduced, and the manufacturing cost is reduced.

The base plate 1 is connected with the side shell 7 through the sealing glue 4, and the sealing performance is improved.

The high-voltage IGBT module is provided with the high-voltage IGBT module, the component of the high-voltage IGBT module arranged in the sealed shell is arranged in the inner cavity of the sealed shell, and the terminal of the high-voltage IGBT module is arranged on the outer side of the sealed shell; the silica gel perfusion cavity is perfused with silica gel 10; the epoxy resin pouring cavity is filled with epoxy resin 11.

The high-voltage IGBT module comprises: a plurality of DBC lining plates 3, chips 5, PCB boards 8 and gate electrode bonding wires 9; the DBC lining plate 3 is welded on the substrate 1 through the solder 2, the chips 5 are welded on the substrate 1, the chips 5 are connected through the bonding wires 6 to form a circuit, the PCB 8 is arranged on the substrate 1, and the PCB 8 is connected with the DBC lining plate 3 through the gate bonding wires 9. The pouring height of the silica gel 10 is higher than that of the gate electrode bonding wire 9, the terminals of the high-voltage IGBT module comprise a signal terminal 12 and a power terminal 13, and the power terminal 13 leads out the power part of the module through welding; the signal terminal 12 is connected with the PCB 8 by welding, and then a signal wire on the chip is led out by a gate pole bonding wire 9.

It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Also in the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and for simplicity of description, and do not indicate or imply that the equipment or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. In addition, in the drawings of the present invention, the filling pattern is only for distinguishing the pattern layer, and is not limited to any other pattern.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A modular seal housing, comprising: the device comprises a base plate (1), a side shell (7) and a cover plate (14), wherein the bottom of the side shell (7) is hermetically connected with the base plate (1); the top of the side shell (7) is hermetically connected with a cover plate (14); the inboard of lateral part shell (7) is equipped with U-shaped structure (15), the one end that U-shaped structure (15) are close to lateral part shell (7) is epoxy barrier portion (15-1), and the other end is silica gel barrier portion (15-2), the height that epoxy barrier portion (15-1) is greater than silica gel barrier portion (15-2), the region between silica gel barrier portion (15-2) is the silica gel and fills the chamber, silica gel fills the chamber top and reach for epoxy fills the chamber between epoxy barrier portion (15-1) and the silica gel barrier portion (15-2).

2. A modular sealing housing according to claim 1, characterized in that a grid structure (16) is provided between the U-shaped structure (15) and the side shells (7).

3. A module capsule according to claim 1, characterized in that the base plate (1) is connected to the side casing (7) by means of a sealing compound (4).

4. A module sealing case according to claim 1, characterized in that the substrate (1) is a copper substrate.

5. A high-voltage IGBT module is characterized in that: the high-voltage IGBT module is provided with a module sealing shell according to any one of claims 1 to 4, components of the high-voltage IGBT module are arranged in the inner cavity of the sealing shell, and terminals of the high-voltage IGBT module are arranged outside the sealing shell; the silica gel perfusion cavity is filled with silica gel (10); the epoxy resin perfusion cavity is perfused with epoxy resin (11).

6. The high voltage IGBT module of claim 5, wherein the components of the high voltage IGBT module comprise: a plurality of DBC lining plates (3), a chip (5), a PCB (8) and a gate electrode bonding wire (9); the DBC lining plate (3) is welded on the substrate (1) through solder (2), the chips (5) are welded on the substrate (1), the chips (5) are connected through bonding wires (6), the PCB (8) is arranged on the substrate (1), and the PCB (8) is connected with the DBC lining plate (3) through a gate bonding wire (9).

7. The high-voltage IGBT module according to claim 6, characterized in that the silicon gel (10) is filled to a height higher than the gate bonding wire (9).

8. A high-voltage IGBT module according to claim 6, characterized in that the terminals of the high-voltage IGBT module comprise signal terminals (12) and power terminals (13), one end of the signal terminals (12) extending from the cover plate (14) and the other end being connected to the PCB (8) and to the signal lines of the chip (5) by gate bonding wires (9); one end of the power terminal (13) extends out of the cover plate (14), and the other end of the power terminal is connected with the DBC lining plate (3).

9. A high voltage IGBT module according to claim 8, characterized in that the signal terminals (12) are connected to the PCB board (8) by means of soldering.

10. A high-voltage IGBT module according to claim 8, characterized in that the power terminals (13) are connected to the DBC substrate (3) by means of soldering.