CN218513433U - Electrostatic chuck with temperature control - Google Patents
Electrostatic chuck with temperature control Download PDFInfo
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- CN218513433U CN218513433U CN202221980715.4U CN202221980715U CN218513433U CN 218513433 U CN218513433 U CN 218513433U CN 202221980715 U CN202221980715 U CN 202221980715U CN 218513433 U CN218513433 U CN 218513433U
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- electrostatic chuck
- cooling
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- wafer
- plate
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Abstract
The utility model discloses an electrostatic chuck with temperature control, which comprises a base, wherein the base is provided with a bearing surface; the bottom plate is arranged on the bearing surface of the base; the heating part is arranged on the upper surface of the bottom plate; the cooling part is arranged on the upper surface of the heating part; the upper plate is arranged on the upper surface of the cooling part, and an electrostatic chuck which is contacted with the heating part is embedded in the upper plate; the cover plate is arranged above the upper plate, and the center of the cover plate is provided with a wafer placing plate covering the electrostatic chuck; the jacking mechanism is arranged on the lower surface of the base; the top of the jacking mechanism is provided with a thimble part which can sequentially penetrate through the base, the bottom plate, the cooling part, the heating part, the electrostatic chuck and the wafer placing plate from bottom to top; the utility model utilizes the jacking part to jack the wafer, and can quickly place the wafer on the wafer placing plate and then quickly adsorb the wafer after the electrostatic chuck is electrified; the heating part and the cooling part can accurately control the temperature of the wafer, and the temperature uniformity of the wafer is good.
Description
Technical Field
The utility model relates to an electrostatic chuck especially relates to an electrostatic chuck with control by temperature change.
Background
The electrostatic adsorption technology used by the electrostatic chuck is an advantageous technology for replacing the traditional mechanical clamping and vacuum adsorption mode, and is widely applied to the fields of semiconductors, panel displays, optics and the like.
In the semiconductor field, wafers need to be etched, an electrostatic chuck is an important component for wafer fixing and temperature control, and because the wafer temperature is an important factor influencing the etching rate and uniformity, chemical reactions in etching are very sensitive to the temperature, a small temperature difference can cause great etching deviation, and the temperature control mode of the electrostatic chuck is mostly realized by directly adopting a heater at present.
However, the temperature control method such as the electrostatic chuck has the following problems: because the heater is directly adopted for heating, the temperature uniformity of the whole electrostatic chuck cannot be ensured, and the etching effect of the wafer is poor; secondly, the heater only can make the electrostatic chuck temperature rise rapidly, but can't be rapid cool down to the electrostatic chuck, lead to the temperature control inaccuracy to can't satisfy the accurate regulation and control demand to the electrostatic chuck temperature.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the purpose is in order to overcome prior art not enough and provide an absorption wafer that can be quick to carry out accurate regulation and control to the temperature of wafer, the good electrostatic chuck that has the control by temperature change of the temperature homogeneity of wafer.
In order to achieve the above purpose, the utility model adopts the technical scheme that: an electrostatic chuck with temperature control, comprising:
the base is provided with a bearing surface;
the bottom plate is arranged on the bearing surface of the base;
a heating part provided on an upper surface of the base plate;
the cooling part is arranged on the upper surface of the heating part and used for cooling the heating part;
the upper plate is arranged on the upper surface of the cooling part, and an electrostatic chuck which is in contact with the heating part is embedded in the upper plate; the heating part is used for transferring heat to the electrostatic chuck after self-heating;
the cover plate is arranged above the upper plate, and a wafer placing plate covering the electrostatic chuck is arranged at the center of the cover plate;
the jacking mechanism is arranged on the lower surface of the base; the top of the jacking mechanism is provided with a thimble part which can sequentially penetrate through the base, the bottom plate, the cooling part, the heating part, the electrostatic chuck and the wafer placing plate from bottom to top and is driven to lift up and down.
Furthermore, the heating part is a metal disc, and heating wires which are uniformly distributed are arranged in the metal disc.
Furthermore, the heating part is a metal disc, and a plurality of uniformly distributed grooves for circulating liquid are formed in the metal disc; the groove is communicated with external liquid through a pipeline, and the external liquid is heated to high temperature through a heater.
Furthermore, a thermocouple is further arranged at the bottom of the base and inserted into the heating part from bottom to top for detecting the temperature of the heating part.
Furthermore, the water cooling part is a water cooling disc, and water cooling grooves which are used for flowing through water cooling liquid and are uniformly distributed are formed in the water cooling disc; the water cooling tank is communicated with a cooling water inlet and outlet positioned at the bottom of the base through a guide pipe.
Furthermore, the wafer placing plate is provided with an air blowing opening penetrating through the electrostatic chuck.
Because of the application of above-mentioned technical scheme, compared with the prior art, the utility model has the following advantage:
the electrostatic chuck with the temperature control function of the utility model can utilize the jacking part to jack the wafer, and can quickly place the wafer on the wafer placing plate, and then quickly adsorb the wafer after the electrostatic chuck is electrified; meanwhile, the temperature of the wafer can be accurately controlled by utilizing the heating part and the cooling part, the stable etching of the wafer is determined, the temperature uniformity of the wafer is good, and the actual temperature control requirement is met.
Drawings
The technical scheme of the utility model is further explained by combining the attached drawings as follows:
fig. 1 is a schematic perspective view of an embodiment of the present invention;
FIG. 2 is a schematic view of the structure of FIG. 1 from another perspective;
fig. 3 is a top view of an embodiment of the present invention;
FIG. 4 is a partial cross-sectional view of B-B of FIG. 3;
wherein: the wafer-level cooling device comprises a base 1, a bottom plate 2, a cooling part 3, a heating part 4, an upper plate 5, an electrostatic chuck 6, a cover plate 7, a wafer-placing plate 8, a jacking mechanism 9, a thimble part 10, a thermocouple 11, an air blowing port 12, a groove 31, a water cooling tank 30, a cooling water inlet/outlet 32 and a power inlet 33.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1-4, an embodiment of the utility model relates to an electrostatic chuck with control by temperature change, including base 1, base 1 is last to have a loading end, and bottom plate 2 hugs closely on base 1's loading end, is equipped with apron 7, upper plate 5, heating portion 4 and the cooling portion 3 of hugging closely the setting from top to bottom in proper order in the top of bottom plate 2, and electrostatic chuck 6 is embedded in upper plate 5, and electrostatic chuck 6's top is hugged closely and is had the wafer that is located apron 7 to place board 8.
The heating part 4 in this embodiment is a metal plate, the metal material adopted by the heating part 4 is to make the thermal conductivity of the heating part better, so that heat is rapidly transferred to the electrostatic chuck 6 through the wafer placing plate 8 to be heated up, a heating wire is arranged in the metal plate, and the temperature of the electrostatic chuck 6 is increased after the heating wire is electrified to generate heat; meanwhile, because the heating wires are uniformly distributed in the metal disc, the temperature uniformity of the heated electrostatic chuck is good, and the whole surface of the wafer can be uniformly heated.
Referring to fig. 4, in another embodiment, the heating portion 4 is also a metal plate, but a groove 31 for flowing liquid is opened in the metal plate, the groove 31 is communicated with an external liquid through a pipe, the external liquid-based heater heats the liquid to a high temperature, and the high-temperature liquid is delivered into the groove 31 through the pipe connected to the electrostatic chuck 6, so as to raise the temperature of the electrostatic chuck to a target temperature.
Wherein, the grooves 31 are uniformly distributed in the metal disc, so that the temperature uniformity of the heated electrostatic chuck can be ensured.
In addition, two thermocouples 11 are also arranged at the bottom of the base 1, and the two thermocouples 11 are inserted into the heating part 4 from bottom to top for detecting the temperature of the heating part and realizing accurate control of the temperature of the electrostatic chuck through PID closed-loop control.
Referring to fig. 2-4, the cooling portion 3 is closely attached to the lower surface of the heating portion 4, and plays a role of cooling the heating portion 4, thereby implementing a function of adjusting the temperature of the electrostatic chuck; in this embodiment, the cooling portion 3 is a water-cooling disc, a plurality of water-cooling grooves 30 for flowing water-cooling liquid are provided in the water-cooling disc, the water-cooling grooves 30 are communicated with a cooling water inlet/outlet 32 at the bottom of the base 1 through a conduit, so that the cooling liquid flows into the water-cooling grooves 30 from the cooling water inlet/outlet 32, and the cooling liquid takes away heat when flowing through the water-cooling disc, thereby reducing the temperature of the water-cooling disc; the temperature of the water cooling part 4 is reduced and then the low temperature is sent to the heating part, so that the heating part is cooled, and the temperature of the electrostatic chuck can be rapidly reduced to a set range.
Wherein, the even distribution of many water-cooling grooves 30 is also in water-cooling portion 3, can carry out holistic cooling to electrostatic chuck fast, and the cooling rate is fast.
Referring to fig. 4, climbing mechanism 9 locates the lower surface of base 1, be equipped with on climbing mechanism 9's the top can pass base 1 from the bottom up in proper order, bottom plate 2, cooling part 3, heating portion 4, electrostatic chuck 6, the top needle portion 10 that board 8 and oscilaltion can be placed to the wafer, top needle portion 10 in this embodiment includes the PIN needle of three relative setting, utilize 9 drive PIN needles oscilaltion of climbing mechanism to can realize placing the function of the jacking of the wafer on the board 8 and putting down to the wafer.
Referring to fig. 2-3, a gas blowing hole 12 penetrating through the electrostatic chuck is formed in the wafer placing plate 8, and the gas blowing hole 12 is used for enabling the wafer to be quickly separated from the electrostatic chuck 6.
Referring to fig. 3, a power inlet 33 for energizing the electrostatic chuck 6 is further disposed at the bottom of the base 1, so as to ensure the normal use of the electrostatic chuck 6.
During actual operation, the wafer is supported and borne by the three ejector PINs in the jacking portion, then the three PIN needles are driven by the jacking mechanism to move downwards, so that the wafer is tightly attached to the wafer placing plate, the wafer placing plate is in contact with the electrostatic chuck, and the power inlet is powered on at the moment, so that the electrostatic chuck adsorbs the wafer through the wafer placing plate.
Then the heating part starts to heat, the heating part transfers the heat to the electrostatic chuck, the electrostatic chuck transfers the heat uniformly to the wafer, and the wafer can quickly and stably reach the set temperature and then is etched; when the temperature of wafer is reduced, the heating part stops heating, the water cooling part starts working, and after the water cooling part is led into water cooling liquid, the heat on the heating part is rapidly replaced, so that the heating part is rapidly cooled, the wafer on the electrostatic chuck is driven to be cooled, and the temperature of the electrostatic chuck can be rapidly and effectively regulated.
In summary, the electrostatic chuck can utilize the jacking portion to jack the wafer, and can quickly place the wafer on the wafer placing plate, and then quickly adsorb the wafer after the electrostatic chuck is powered on; meanwhile, the temperature of the wafer can be accurately controlled by utilizing the heating part and the cooling part, the stable etching of the wafer is determined, the temperature uniformity of the wafer is good, and the actual temperature control requirement is met.
The above is only a specific application example of the present invention, and does not constitute any limitation to the protection scope of the present invention. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (6)
1. An electrostatic chuck with temperature control, comprising:
the base is provided with a bearing surface;
the bottom plate is arranged on the bearing surface of the base;
a heating part provided on an upper surface of the base plate;
the cooling part is arranged on the upper surface of the heating part and used for cooling the heating part;
the upper plate is arranged on the upper surface of the cooling part, and an electrostatic chuck which is in contact with the heating part is embedded in the upper plate; the heating part is used for transferring heat to the electrostatic chuck after self-heating;
the cover plate is arranged above the upper plate, and a wafer placing plate covering the electrostatic chuck is arranged at the center of the cover plate;
the jacking mechanism is arranged on the lower surface of the base; the top of the jacking mechanism is provided with a thimble part which can sequentially penetrate through the base, the bottom plate, the cooling part, the heating part, the electrostatic chuck and the wafer placing plate from bottom to top and is driven to lift up and down.
2. The electrostatic chuck with temperature control of claim 1, wherein: the heating part is a metal disc, and heating wires which are uniformly distributed are arranged in the metal disc.
3. The electrostatic chuck with temperature control of claim 1, wherein: the heating part is a metal disc, and a plurality of uniformly distributed grooves for circulating liquid are formed in the metal disc; the groove is communicated with external liquid through a pipeline, and the external liquid is heated to high temperature through a heater.
4. The electrostatic chuck with temperature control of claim 1, wherein: the base bottom still is equipped with the thermocouple, the thermocouple is followed and is up inserted in the heating portion for detect the temperature of heating portion.
5. The electrostatic chuck with temperature control of claim 1, wherein: the cooling part is a water cooling disc, and a plurality of water cooling grooves which are uniformly distributed and used for flowing water cooling liquid are arranged in the water cooling disc; the water cooling tank is communicated with a cooling water inlet and outlet positioned at the bottom of the base through a guide pipe.
6. The electrostatic chuck with temperature control of claim 1, wherein: and the wafer placing plate is provided with an air blowing port penetrating through the electrostatic chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221980715.4U CN218513433U (en) | 2022-07-29 | 2022-07-29 | Electrostatic chuck with temperature control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221980715.4U CN218513433U (en) | 2022-07-29 | 2022-07-29 | Electrostatic chuck with temperature control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218513433U true CN218513433U (en) | 2023-02-21 |
Family
ID=85207095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221980715.4U Active CN218513433U (en) | 2022-07-29 | 2022-07-29 | Electrostatic chuck with temperature control |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218513433U (en) |
-
2022
- 2022-07-29 CN CN202221980715.4U patent/CN218513433U/en active Active
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