CN218498077U

CN218498077U - Sensor module and electronic equipment

Info

Publication number: CN218498077U
Application number: CN202222596034.4U
Authority: CN
Inventors: 刘清文; 赖芳奇
Original assignee: Guangdong Yuehai Integrated Technology Co ltd; Weinan Impression Cognitive Technology Co ltd
Current assignee: Guangdong Yuehai Integrated Technology Co ltd; Weinan Impression Cognitive Technology Co ltd
Priority date: 2022-09-29
Filing date: 2022-09-29
Publication date: 2023-02-17
Anticipated expiration: 2032-09-29

Abstract

The application provides a sensor module and electronic equipment, includes: the photoelectric sensor comprises a silicon substrate, a shading layer, a protective frame, a photoelectric sensor and an optical filter; the first surface of the silicon substrate is provided with a rewiring layer, and the second surface of the silicon substrate covers the shading layer; the protective frame is connected with the first surface of the silicon substrate; the photoelectric sensor is positioned in the protective frame and connected with the first surface of the silicon substrate, wherein a gap is reserved between the periphery of the photoelectric sensor and the protective frame; glue is filled in the gap and used for fixing the photoelectric sensor; the photoelectric sensor is electrically connected with the redistribution layer; the optical filter is arranged above the photoelectric sensor. The total thickness of the sensor module that this application provided can fall to 200 mu m, has the advantage that can not take place the warpage simultaneously.

Description

Sensor module and electronic equipment

Technical Field

The application belongs to the technical field of sensor modules, and particularly relates to a sensor module and electronic equipment.

Background

At present, electronic devices, such as mobile phones and tablet computers, are often equipped with a sensor module, such as a fingerprint module, for capturing and recognizing biometric images of a user, such as a fingerprint.

With the development trend of thinner and thinner electronic equipment, the space reserved for the sensor module is also smaller and smaller. That is, if the thickness of the sensor module cannot be further reduced, the thickness of the sensor module may hinder the implementation of a thin electronic device.

Therefore, how to develop a sensor module with smaller thickness is a problem to be solved by those skilled in the art.

SUMMERY OF THE UTILITY MODEL

The application provides a sensor module and electronic equipment, and the total thickness of the sensor module that this application provided can drop to 200 mu m. Therefore, the sensor module provided by the application is applied to the electronic equipment, and the realization of the ultra-thin electronic equipment becomes possible.

In a first aspect, the present application provides a sensor module, comprising: the photoelectric sensor comprises a silicon substrate, a shading layer, a protective frame, a photoelectric sensor and an optical filter; the first surface of the silicon substrate is provided with a rewiring layer, and the second surface of the silicon substrate covers the shading layer; the protective frame is connected with the first surface of the silicon substrate; the photoelectric sensor is positioned in the protective frame and connected with the first surface of the silicon substrate, wherein a gap is reserved between the periphery of the photoelectric sensor and the protective frame; glue is filled in the gap and used for fixing the photoelectric sensor; the photoelectric sensor is electrically connected with the redistribution layer; the optical filter is arranged above the photoelectric sensor.

In one implementation, the protective frame and the silicon substrate are made of the same material.

In one implementation manner, the redistribution layer is routed between the protective frame and the silicon substrate, so that the lines in the redistribution layer extend from the inner side of the protective frame to the outer side of the protective frame; wherein an extension region of the redistribution layer located outside the protection frame is used for connecting with an external circuit.

In one implementation manner, the thickness of the photoelectric sensor is 50 ± 5 μm, the total thickness of the silicon substrate and the light shielding layer is 105 ± 5 μm, the thickness of the protective frame is 95 ± 5 μm, and the total thickness of the sensor module is 200 ± 10 μm.

In a second aspect, the present application provides a sensor module, including a silicon substrate, a light-shielding layer, a photosensor, and an optical filter; the silicon substrate comprises a flat plate and a bulge formed by extending upwards from a first surface of the flat plate; wherein the bulges are enclosed to form a protective frame; the second surface of the silicon substrate covers the light shielding layer; the photoelectric sensor is positioned in the protective frame and connected with the flat plate, wherein a gap is reserved between the periphery of the photoelectric sensor and the protective frame; glue is filled in the gap and used for fixing the photoelectric sensor; a rewiring layer is arranged on the first surface of the silicon substrate; the photoelectric sensor is electrically connected with the redistribution layer; the optical filter is arranged above the photoelectric sensor.

In one implementation manner, the redistribution layer is routed along the outer surface of the protection frame, so that the line in the redistribution layer extends from the inner side of the protection frame to the outer side of the protection frame; and the top surface of the protective frame is provided with a groove for routing the redistribution layer.

In one implementation, the cross section of the protrusion is trapezoidal or rectangular, and the lower base angle of the trapezoid is less than or equal to 70 °.

In one implementation manner, the thickness of the photoelectric sensor is 50 ± 5 μm, the total thickness of the flat plate and the light shielding layer is 105 ± 5 μm, the thickness of the protrusion is 95 ± 5 μm, and the total thickness of the sensor module is 200 ± 10 μm.

In a third aspect, the present application provides an electronic device including the sensor module according to any one of the first aspect or the second aspect.

In one implementation, the electronic device further includes a display screen; be provided with the aperture layer in the display screen, be provided with at least one aperture that is used for the aperture formation of image in the aperture layer, the sensor module set up in at least one aperture below.

In conclusion, the sensor module and the electronic device provided by the application can reduce the total thickness of the sensor module to 200 μm, and have the following beneficial effects: first, the problem of warping of the silicon substrate and the photosensor due to temperature changes is solved by using the silicon substrate made of the same material as the photosensor as the substrate and by making the CTEs of the silicon substrate and the photosensor the same. And secondly, the light shielding layer is arranged on the second surface of the silicon substrate, so that the thickness of the silicon substrate can be further reduced on the basis of ensuring the strength of the silicon substrate without influencing the image acquisition effect of the photoelectric sensor. Thirdly, a protective frame is arranged on the periphery of the photoelectric sensor, so that the photoelectric sensor is positioned in the protective frame, and a gap is reserved between the periphery of the photoelectric sensor and the protective frame. Therefore, on one hand, the photoelectric sensor is conveniently fixed in the protective frame by using glue. On the other hand, a gap is reserved between the periphery of the photoelectric sensor and the protective frame, and the photoelectric sensor can have certain buffering capacity to external force.

Furthermore, if the silicon substrate adopts a mode of integrally forming the flat plate and the protective frame, the method also has the following beneficial effects: firstly, the silicon substrate middle flat plate and the protection frame are integrally formed, so that the strength of the protection frame can be improved; and the section of the protective frame is designed to be trapezoidal, and the lower bottom angle alpha of the trapezoid is less than or equal to 70 degrees. Secondly, routing the rewiring layer along the outer surface of the protective frame, so that a circuit in the rewiring layer extends from the inner side of the protective frame to the outer side of the protective frame. Therefore, the routing of the rewiring layer does not need to penetrate through the silicon substrate, and the overall strength of the silicon substrate is ensured. Thirdly, a groove for routing the redistribution layer is formed in the top surface of the protective frame, so that the circuit can be prevented from being worn by routing the wire in the groove.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural diagram of a sensor module according to an embodiment of the present disclosure;

fig. 2 is a schematic perspective view of a sensor module according to an embodiment of the present disclosure;

fig. 3 is a schematic perspective view of a sensor module according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of a sensor module according to the second embodiment of the present disclosure;

fig. 5 is a schematic perspective view of a sensor module according to a second embodiment of the present application.

Description of the reference numerals

1-a silicon substrate; 2-a light-shielding layer; 3-a protective frame; 4-a photosensor; 5-an optical filter; 6-a rewiring layer; 7-glue; 8-a wire; 9-a first die attach film; 10-a second die attach film; 11-a plate; 31-a groove; 61-first welding point; 62-second weld point.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The embodiment of the application provides an ultra-thin sensor module, and the total thickness of the ultra-thin sensor module can be reduced to 200 mu m. Therefore, the ultra-thin sensor module provided by the embodiment of the application is applied to the electronic equipment, so that the ultra-thin electronic equipment can be realized.

The ultra-thin sensor module provided by the embodiment of the present application is described in detail below with reference to the accompanying drawings.

Example one

Fig. 1 is a schematic structural diagram of a sensor module according to an embodiment of the present disclosure. As shown in fig. 1, a sensor module according to a first embodiment of the present disclosure includes a silicon substrate 1, a light shielding layer 2, a protective frame 3, a photoelectric sensor 4, and an optical filter 5. A rewiring layer 6 is arranged on the first surface of the silicon substrate 1, and the second surface of the silicon substrate 1 covers the light shielding layer 2; the protective frame 3 is connected with the first surface of the silicon substrate 1, wherein the protective frame 3 and the silicon substrate 1 can be made of the same material; the photoelectric sensor 4 is positioned in the protective frame 3 and connected with the first surface of the silicon substrate 1, wherein a gap is reserved between the periphery of the photoelectric sensor 4 and the protective frame 3; glue 7 is filled in the gap, and the glue 7 is used for fixing the photoelectric sensor 4; the photosensor 4 is electrically connected to the redistribution layer 6; the optical filter 5 is disposed above the photosensor 4.

The silicon substrate 1 is a flat plate structure, and the silicon substrate 1 can provide electrical connection, protection, support and the like for the photoelectric sensor 4. To realize an ultra-thin sensor module, the thickness of the silicon substrate 1 can be reduced, for example, the thickness of the silicon substrate 1 is 105 μm. However, when the thickness of the silicon substrate 1 is 105 μm, the silicon substrate 1 transmits light, and thus light incident from below the silicon substrate 1 affects the image capturing effect of the photosensor 4. Therefore, in the present invention, the light shielding layer 2 covers the second surface of the silicon substrate 1, and the light shielding layer 2 can block light from entering the first surface from the second surface of the silicon substrate 1, thereby avoiding the influence on the image capturing effect of the photosensor 4.

The light-shielding layer 2 is not limited in the present application, and for example, a light-shielding coating layer may be applied to the second surface of the silicon substrate 1, or a light-shielding plating layer (e.g., an aluminum layer) may be electroplated on the second surface of the silicon substrate 1 to form the light-shielding layer 2.

Fig. 2 is a schematic perspective view of a sensor module according to an embodiment of the present disclosure, and the protection frame 3 is not shown in fig. 2. Referring to fig. 1 and 2, in the present invention, a redistribution layer 6 is formed on a first surface of a silicon substrate 1, and the photosensor 4 is connected to an external circuit through the redistribution layer 6. For example, one pin of the photosensor 4 is electrically connected to the first bonding pad 61 on the redistribution layer 6 through the wire 8, and the second bonding pad 62 on the redistribution layer 6 is electrically connected to an external circuit, where the first bonding pad 61 and the second bonding pad 62 are two different bonding pads.

There may also be a passivation layer on the first surface of the silicon substrate 1, and then a redistribution layer 6 is formed on the passivation layer. For example, the passivation layer may be silicon dioxide.

The photoelectric sensor 4 is a device that converts an optical signal into an electrical signal. In the present application, an Image Sensor such as a CMOS (Complementary Metal-Oxide-Semiconductor), a CIS (CMOS Image Sensor), or a CCD (Charge-coupled Device) may be used.

The main material of the photosensor 4 is silicon, and the silicon substrate 1 and the photosensor 4 are made of the same material, that is, the silicon substrate 1 and the photosensor 4 have the same Coefficient of Thermal Expansion (CTE). Thus, the silicon substrate 1 and the photosensor 4 do not warp when the temperature changes.

By applying the sensor module provided by the embodiment of the present application to an electronic device, when a user uses the electronic device for a long time and the temperature of the electronic device is too high, the CTEs of the silicon substrate 1 and the photoelectric sensor 4 are the same, so that the silicon substrate 1 and the photoelectric sensor 4 installed in the electronic device are not warped, and the normal operation of the sensor module can be ensured.

The photoelectric sensor 4 is a main component in the sensor module, but is easily damaged mechanically because of its small thickness. For example, when the photosensor 4 is applied to an electronic device having a flexible screen, when a user presses the flexible screen, the photosensor 4 under the flexible screen is easily damaged.

Fig. 3 is a schematic perspective view of a sensor module according to an embodiment of the present disclosure. As shown in fig. 3, in order to protect the photosensor 4, the present application provides a bezel 3 on the periphery of the photosensor 4 such that the photosensor 4 is located inside the bezel 3. As shown in fig. 1 and 3, the thickness of the bezel 3 is greater than that of the photosensor 4, so that when the user presses the flexible screen, since the bezel 3 is supported around the photosensor 4, the photosensor 4 can be prevented from being damaged.

As shown in fig. 1 to 3, in the first embodiment of the present invention, the redistribution layer 6 may be routed between the protection frame 3 and the silicon substrate 1, such that the lines in the redistribution layer 6 extend from the inner side of the protection frame 3 to the outer side of the protection frame 3.

Among them, the extension region of the rewiring layer 6 located outside the protection frame 3 is used for connection to an external circuit. For example, a second bonding pad 62 is provided in the extended region, such that the second bonding pad 62 can be connected to an external circuit (e.g., a printed circuit board) via a bonding pad.

The structure of the bezel 3 is not limited in the present application, and for example, the bezel 3 may be a square frame, a circular frame, or other regular or irregular frame. The material of the bezel 3 is not limited in the present application, and the bezel 3 may be made of silicon, for example.

As shown in fig. 1 and 3, a gap is left between the periphery of the photosensor 4 and the bezel 3. This facilitates, on the one hand, the fixing of the photoelectric sensor 4 in the protective frame 3 by means of glue 7. On the other hand, a gap is left between the periphery of the photosensor 4 and the protective frame 3, and the photosensor can have a certain buffering capacity against external force. For example, when the bezel 3 is slightly deformed, the photosensor 4 spaced apart from the bezel 3 is not affected.

The glue 7 is soft and has certain elasticity, and the solidified state of the glue 7 is in a jelly shape. The glue 7 used in this application may be an existing glue, such as silicone or the like. Alternatively, the glue 7 may be made of a transparent material.

Wherein the top surface of the cured glue 7 may be flush with the top surface of the fixed frame 3 or lower than the top surface of the fixed frame 3 so as not to additionally increase the height of the entire sensor module.

A filter 5 is also provided above the photosensor 4, the filter 5 also being located inside the protective frame 3, and the top surface of the filter 5 may be flush with the top surface of the fixed frame 3, or lower than the top surface of the fixed frame 3.

Wherein the filter 5 may be an infrared filter for filtering infrared rays. The optical filter 5 may be an infrared-resistant coating, and may be formed on the photoelectric sensor 4 by a process such as evaporation, spraying, or the like, using an existing infrared-resistant material.

To sum up, the sensor module that this application embodiment one provided has following advantage: first, the silicon substrate 1 made of the same material as the photosensor 4 is used as the substrate, and the CTE of the silicon substrate 1 is made the same as that of the photosensor 4, so that the problem of warpage of the silicon substrate 1 and the photosensor 4 does not occur when the temperature changes. Secondly, the light shielding layer 2 is disposed on the second surface of the silicon substrate 1, so that the thickness of the silicon substrate 1 can be further reduced without affecting the image capturing effect of the photoelectric sensor 4 while ensuring the strength of the silicon substrate 1. Thirdly, the protection frame 3 is provided on the periphery of the photosensor 4, the photosensor 4 is positioned in the protection frame 3, and a gap is left between the periphery of the photosensor 4 and the protection frame 3. This facilitates, on the one hand, the fixing of the photoelectric sensor 4 in the protective frame 3 by means of glue 7. On the other hand, a gap is left between the periphery of the photoelectric sensor 4 and the protection frame 3, and the photoelectric sensor can have a certain buffering capacity against an external force.

The photosensor 4 and the silicon substrate 1, and the bezel 3 and the silicon substrate 1 may be connected to each other through a Die Attach Film (DAF). For example, the photosensor 4 and the silicon substrate 1 are connected by a first die bond film 9, and the bezel 3 and the silicon substrate 1 are connected by a second die bond film 10.

In one example, the total thickness h1 of the silicon substrate 1 and the light-shielding layer 2 is 105 ± 5 μm, wherein the silicon substrate 1 includes a 2 μm thick silicon dioxide passivation layer thereon. The thickness h2 of the first die attach film 9 and the second die attach film 10 is 15 ± 3 μm, the thickness h3 of the photosensor 4 is 50 ± 5 μm, the thickness h4 of the cured glue 7 above the photosensor 4 is 30 μm, and the tolerance of the thickness h4 is (-5, + 0). The total thickness h5 of the bezel 3 and the second die attach film 10 is 95 ± 5 μm. Thus, the maximum thickness (h 1+ h 5) of the sensor module in the first embodiment of the present application is 200 ± 10 μm. Compared with the existing sensor module with the thickness of 300-750 mu m, the sensor module provided by the first embodiment of the application is further reduced by 100-550 mu m.

Example two

Fig. 4 is a schematic structural diagram of a sensor module according to a second embodiment of the present disclosure. As shown in fig. 4, a sensor module according to the second embodiment of the present application includes a silicon substrate 1, a light shielding layer 2, a photosensor 4, and an optical filter 5. Wherein, the silicon substrate 1 comprises a flat plate 11 and a bump formed by extending upward from a first surface of the flat plate 11; wherein the bulges are enclosed to form a protective frame 3. The second surface of the silicon substrate 1 covers the light shielding layer 2. The photoelectric sensor 4 is positioned in the protective frame 3 and connected with the flat plate 11, wherein a gap is left between the periphery of the photoelectric sensor 4 and the protective frame 3. The gap is filled with glue 7, and the glue 7 is used for fixing the photoelectric sensor 4. The first surface of the silicon substrate 1 is provided with a rewiring layer 6, and the photoelectric sensor 4 is electrically connected to the rewiring layer 6. The optical filter 5 is disposed above the photosensor 4.

In the second embodiment of the present application, the silicon substrate 1 is a non-flat plate structure, and the flat plate 11 and the protection frame 3 are integrally formed in the silicon substrate 1, so that the strength of the protection frame 3 can be improved. Wherein, the cross section of the bulge can be rectangular or trapezoidal. Because the flat plate 11 and the protection frame 3 are integrally formed, in practical application, stress concentration is easily generated at the joint of the flat plate 11 and the protection frame 3, which leads to the fracture of the joint of the flat plate 11 and the protection frame 3. In order to solve the technical problem, in the second embodiment of the present application, the cross section of the protrusion may be designed to be a trapezoid, and a lower base angle α of the trapezoid is less than or equal to 70 °. Thus, stress concentration at the joint between the flat plate 11 and the protective frame 3 can be reduced, and the overall strength of the silicon substrate 1 can be improved. In one example, the cross section of the projection may be designed as an isosceles trapezoid.

In the second embodiment of the present application, since the flat plate 11 and the protection frame 3 are integrally formed in the silicon substrate 1, if the redistribution layer 6 passes through the silicon substrate 1 to connect the inner layer and the outer layer of the circuit of the protection frame 3, a through hole is formed in the flat plate 11 or the protection frame 3, which reduces the overall strength of the silicon substrate 1. Therefore, in order to solve this technical problem, in the second embodiment of the present application, the redistribution layer 6 is routed along the outer surface of the protection frame 3, so that the lines in the redistribution layer 6 extend from the inner side of the protection frame 3 to the outer side of the protection frame 3. In this way, the routing of the rewiring layer 6 need not be provided through the silicon substrate 1, thereby ensuring the strength of the silicon substrate 1 as a whole.

The applicant finds that when the redistribution layer 6 is routed along the outer surface of the protection frame 3, the top surface of the protection frame 3 is the highest point of the whole sensor module, so when the sensor module is applied to an electronic device, a circuit located in the top surface area of the protection frame 3 may contact with other components (such as a display screen) in the electronic device. Thus, abrasion of the wiring located in the top surface area of the bezel 3 is easily caused.

Fig. 5 is a schematic perspective view of a sensor module according to a second embodiment of the present application. As shown in fig. 5, in order to solve the problem that the circuit located in the top surface area of the protection frame 3 is easily worn, the protection frame 3 is provided with a groove 31 for routing the redistribution layer 6 on the top surface. In this way, the wires can be prevented from being worn by running the wires in the grooves 31.

The light-shielding layer 2, the photoelectric sensor 4, the optical filter 5, the glue 7, and the like in the second embodiment of the present application may be the same as those in the first embodiment, and specific reference may be made to the description of the light-shielding layer 2, the photoelectric sensor 4, the optical filter 5, and the glue 7 in the first embodiment, which is not described herein again.

To sum up, the sensor module that this application embodiment two provided has following advantage: first, the silicon substrate 1 made of the same material as the photosensor 4 is used as the substrate, and the CTE of the silicon substrate 1 is made the same as that of the photosensor 4, so that the problem of warpage of the silicon substrate 1 and the photosensor 4 does not occur when the temperature changes. Secondly, the middle flat plate 11 of the silicon substrate 1 and the protection frame 3 are integrally formed, so that the strength of the protection frame 3 can be improved; and the cross section of the bezel 3 is designed to be trapezoidal, the lower base angle α of which is less than or equal to 70 °. Thus, stress concentration at the joint between the flat plate 11 and the protective frame 3 can be reduced, and the overall strength of the silicon substrate 1 can be improved. Thirdly, the light-shielding layer 2 is provided on the second surface of the silicon substrate 1, so that the thickness of the silicon substrate 1 can be further reduced without affecting the image capturing effect of the photosensor 4 on the basis of ensuring the strength of the silicon substrate 1. Fourthly, the rewiring layer 6 is routed along the outer surface of the protective frame 3, so that the circuit in the rewiring layer 6 extends from the inner side of the protective frame 3 to the outer side of the protective frame 3. In this way, the routing of the rewiring layer 6 need not be provided through the silicon substrate 1, thereby ensuring the strength of the silicon substrate 1 as a whole. Fifthly, a groove 31 for routing the redistribution layer 6 is provided on the top surface of the protection frame 3, so that the circuit can be prevented from being worn by routing in the groove 31.

In one example, the total thickness h1 of the flat plate 11 and the light shielding layer 2 in the silicon substrate 1 is 105 ± 5 μm, wherein the total thickness h1 includes a silicon dioxide passivation layer with a thickness of 2 μm. The thickness h2 of the first chip bonding film 9 is 15 + -3 μm, the thickness h3 of the photoelectric sensor 4 is 50 + -5 μm, the thickness h4 of the cured glue 7 above the photoelectric sensor 4 is 30 μm, and the tolerance of the thickness h4 is (-5, + 0). The thickness h5 of the protective frame 3 in the silicon substrate 1 was 95. + -.5. Mu.m. Thus, the maximum thickness (h 1+ h 5) of the sensor module in the second embodiment of the present application is 200 ± 10 μm. Compared with the existing sensor module with the thickness of 300-750 mu m, the sensor module provided by the first embodiment of the application is further reduced by 100-550 mu m.

It should be noted that, in the above embodiment, only the parallel arrangement of the lines in the redistribution layer 6 is used for exemplary illustration, and the limitation on the arrangement manner of the lines in the redistribution layer 6 is not shown, and specifically, the arrangement manner of the lines in the redistribution layer 6 may be adjusted according to different practical application scenarios.

EXAMPLE III

The third embodiment of the present application provides an electronic device, which includes the sensor module provided in the first embodiment or the second embodiment. Therefore, the biological characteristic images such as fingerprints of the user can be collected and identified through the sensor module in the electronic equipment.

In a concrete example, above-mentioned sensor module can be applied to the electronic equipment who has the display screen in, is provided with aperture layer in this display screen, is provided with at least one aperture that is used for the aperture formation of image in the aperture layer, and the sensor module sets up in at least one aperture below. Thus, light above the display screen passes through the small hole and the optical filter 5, and an image spot is formed on the photoelectric sensor 4 according to the principle of small hole imaging. The photoelectric sensor 4 outputs the image spots in the form of electric signals, so that the electric signals can be processed subsequently to form an image, and the image acquisition process is completed. The sensor module is applied to electronic equipment and can be used for collecting biological characteristic images such as fingerprints, palm prints and human faces.

As is apparent from the above description of the first and second embodiments, the thickness of the sensor module in the first and second embodiments of the present application can be reduced to 200 μm, so that an electronic apparatus using the sensor module has a further reduced space in thickness.

The same and similar parts among the various embodiments in this specification may be referred to each other, and especially the embodiments of the electronic device may be referred to the description in the sensor module.

Further, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

It should be understood that in the description of the present application, the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present application.

"plurality" in this specification means two or more unless otherwise specified. In the embodiments of the present application, the words "first", "second", and the like are used to distinguish the same items or similar items having substantially the same functions and actions. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion.

The present application has been described in detail with reference to particular embodiments and illustrative examples, but the description is not intended to be construed as limiting the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications or improvements may be made to the presently disclosed embodiments and implementations thereof without departing from the spirit and scope of the present disclosure, and these fall within the scope of the present disclosure. The protection scope of this application is subject to the appended claims.

Claims

1. A sensor module, comprising: the photoelectric sensor comprises a silicon substrate, a shading layer, a protective frame, a photoelectric sensor and an optical filter; wherein the content of the first and second substances,

a rewiring layer is arranged on the first surface of the silicon substrate, and the second surface of the silicon substrate covers the shading layer;

the protective frame is connected with the first surface of the silicon substrate;

the photoelectric sensor is positioned in the protective frame and connected with the first surface of the silicon substrate, wherein a gap is reserved between the periphery of the photoelectric sensor and the protective frame;

glue is filled in the gap and used for fixing the photoelectric sensor;

the photoelectric sensor is electrically connected with the redistribution layer;

the optical filter is arranged above the photoelectric sensor.

2. The sensor module of claim 1, wherein the bezel and the silicon substrate are made of the same material.

3. The sensor module of claim 1, wherein the redistribution layer is routed between the protective frame and the silicon substrate such that the routing in the redistribution layer extends from an inner side of the protective frame to an outer side of the protective frame;

wherein an extension region of the redistribution layer located outside the protection frame is used for connecting with an external circuit.

4. The sensor module of claim 1, wherein the thickness of the photo sensor is 50 ± 5 μm, the total thickness of the silicon substrate and the light shielding layer is 105 ± 5 μm, the thickness of the protective frame is 95 ± 5 μm, and the total thickness of the sensor module is 200 ± 10 μm.

5. A sensor module is characterized by comprising a silicon substrate, a shading layer, a photoelectric sensor and an optical filter; wherein the content of the first and second substances,

the silicon substrate comprises a flat plate and a bulge formed by extending upwards from a first surface of the flat plate; wherein the bulges are enclosed to form a protective frame;

the second surface of the silicon substrate covers the light shielding layer;

the photoelectric sensor is positioned in the protective frame and connected with the flat plate, wherein a gap is reserved between the periphery of the photoelectric sensor and the protective frame;

glue is filled in the gap and used for fixing the photoelectric sensor;

a rewiring layer is arranged on the first surface of the silicon substrate;

the optical filter is arranged above the photoelectric sensor.

6. The sensor module according to claim 5, wherein the redistribution layer is routed along the outer surface of the protection frame, so that the lines in the redistribution layer extend from the inner side of the protection frame to the outer side of the protection frame;

and the top surface of the protective frame is provided with a groove for routing the redistribution layer.

7. The sensor module of claim 5, wherein the protrusion has a trapezoidal or rectangular cross section, and a lower base angle of the trapezoidal cross section is less than or equal to 70 °.

8. The sensor module of claim 5, wherein the thickness of the photo sensor is 50 ± 5 μm, the total thickness of the flat plate and the light shielding layer is 105 ± 5 μm, the thickness of the protrusion is 95 ± 5 μm, and the total thickness of the sensor module is 200 ± 10 μm.

9. An electronic device comprising a sensor module according to any one of claims 1-8.

10. The electronic device of claim 9, further comprising a display screen;

be provided with the aperture layer in the display screen, be provided with at least one aperture that is used for the aperture formation of image in the aperture layer, the sensor module set up in at least one aperture below.