CN218478823U

CN218478823U - Epitaxial process equipment

Info

Publication number: CN218478823U
Application number: CN202222327632.1U
Authority: CN
Inventors: 崔宇
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2022-09-01
Filing date: 2022-09-01
Publication date: 2023-02-14
Anticipated expiration: 2032-09-01

Abstract

The utility model discloses an epitaxial process equipment, including the technology cavity, go up lid and base, go up the upper end that the technology cavity was located to the lid, the base is located between lid and the technology cavity, go up the lid, base and technology cavity enclose into the process space, the base has the holding surface that is used for bearing the weight of the wafer, the first inlet port and the second inlet port that all communicate with the process space are seted up to the technology cavity, the first drill way of first inlet port and process space intercommunication is towards first direction, first direction is parallel with the holding surface, the second drill way of second inlet port and process space intercommunication is towards the second direction, the second direction is crossing with the first direction. The technical scheme can solve the problem that the upper cover body is difficult to clean and etch cleanly when the epitaxial growth equipment is used for cleaning an etching process.

Description

Epitaxial process equipment

Technical Field

The utility model relates to an epitaxial process equipment designs technical field, especially relates to an epitaxial process equipment.

Background

Epitaxial process equipment is a common type of semiconductor process equipment. In an epitaxial growth process, a plurality of precursor gases are reacted in an epitaxial process equipment and deposited on a wafer to obtain an epitaxial thin film with a certain thickness. Of course, the epitaxial growth process inevitably forms attachments on other parts in the epitaxial process equipment, and the accumulation of the attachments affects the particle level in the epitaxial process equipment and the stability of the next epitaxial production process, which finally causes the epitaxial process equipment to need frequent maintenance.

In the related art, after the epitaxial growth process is completed, a cleaning etching process is performed to remove the attachments remaining at various portions in the epitaxial process equipment. The top of the epitaxial process equipment related to the related art adopts an arched upper cover body so as to meet different pressure and special process requirements. The inner side surface of the arched upper cover body is far away from an air flow path of the cleaning and etching process, so that the inner side surface of the upper cover body is difficult to obtain cleaning and etching air flow with high concentration, and finally the cleaning and etching process is difficult to perform sufficient cleaning and etching on the inner side surface of the upper cover body, so that the cleaning effect of attachments is poor.

Of course, not limited to the arched upper cover, other shapes of upper covers are far away from the gas flow path for cleaning the etching process, and the similar problems exist when the etching attachment needs to be cleaned.

SUMMERY OF THE UTILITY MODEL

The utility model discloses an epitaxial process equipment to solve the epitaxial process equipment that the correlation technique relates to and exist the difficult problem of being washd the sculpture clean of lid when clearance sculpture technology.

In order to solve the technical problem, the utility model discloses a so realize:

an epitaxial process device comprises a process cavity, an upper cover body and a base, wherein the upper cover body is arranged at the upper end of the process cavity, the base is arranged between the upper cover body and the process cavity, a process space is defined by the upper cover body, the base and the process cavity, the base is provided with a supporting surface used for bearing a wafer, the process cavity is provided with a first air inlet hole and a second air inlet hole which are communicated with the process space, a first hole opening of the first air inlet hole communicated with the process space faces a first direction, the first direction is parallel to the supporting surface, a second hole opening of the second air inlet hole communicated with the process space faces a second direction, and the second direction is intersected with the first direction.

The utility model discloses a technical scheme can reach following technological effect:

the epitaxial process equipment disclosed by the embodiment of the application improves the structure of the epitaxial process equipment in the related art, so that a first air inlet hole and a second air inlet hole which are communicated with a process space are formed in a process cavity, and meanwhile, a second orifice of the second air inlet hole, which is communicated with the process space, faces to a second direction and is intersected with the first direction.

Drawings

Fig. 1 is a schematic structural diagram of epitaxial process equipment disclosed in an embodiment of the present invention;

fig. 2 and fig. 3 are schematic diagrams of partial structures of epitaxial process equipment disclosed in an embodiment of the present invention;

fig. 4 is an enlarged schematic view of a portion of the structure of fig. 1.

Description of the reference numerals:

100-process chamber, 110-lower cover, 120-first annular liner, 121-first groove, 1211-bottom wall, 1212-first side wall, 122-second groove, 130-second annular liner, 131-first straight line segment, 132-second straight line segment, 140-air inlet separator, 141-third straight line segment, 142-fourth straight line segment, 143-bulge, 150-base ring, 151-first joining channel, 152-second joining channel,

200-an upper cover body,

300-base, 310-supporting surface,

400-preheating ring,

500-a first gas transmission pipeline,

600-a second gas transmission pipeline,

101-process space, 102-first air inlet hole, 1021-first air inlet section, 1022-third air inlet section, 1023-fourth air inlet section, 103-second air inlet hole, 1031-second air inlet section, 1032-fifth air inlet section and 104-air outlet channel.

Detailed Description

To make the purpose, technical solution and advantages of the present invention clearer, the following description will be given with reference to the embodiments of the present invention and the accompanying drawings, in which the technical solution of the present invention is clearly and completely described. It is obvious that the described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

Referring to fig. 1 to 4, an epitaxial process apparatus according to an embodiment of the present disclosure includes a process chamber 100, an upper lid 200, and a susceptor 300.

The process chamber 100 is an apparatus main body of the epitaxial process apparatus, and the process chamber 100 is not only a main component of a process space 101 enclosing the epitaxial process apparatus, but also is used for providing an installation foundation for other components of the epitaxial process apparatus.

The upper cover body 200 may be a dome-shaped structural member, or may be other uneven structural members, and the embodiment of the present application does not limit the specific structure of the upper cover body 200. The upper lid 200 is disposed at the upper end of the process chamber 100. Specifically, the process chamber 100 has an upper opening, and the upper cover 200 is disposed at the upper end of the process chamber 100 and covers the upper opening of the process chamber 100. Specifically, the upper cover 200 may be detachably fixed to the upper end of the process chamber 100.

The susceptor 300 is disposed between the upper lid 200 and the process chamber 100, and the susceptor 300 is used for supporting a wafer. Specifically, the susceptor 300 has a supporting surface 310 for carrying a wafer. The support surface 310 is planar. The susceptor 300, the upper lid 200 and the process chamber 100 enclose a process space 101, and the process space 101 is a space capable of performing an epitaxial process.

Alternatively, the base 300 may be an electrostatic chuck, and may also be a supporting structure with other specific structures, and the specific kind and structure of the base 300 are not limited in the embodiments of the present application. The inner side surface of the upper cover 200 constitutes an inner top wall of the epitaxial process apparatus, and the support surface 310 faces the inner side surface of the upper cover 200. Specifically, the support surface 310 faces vertically upward and is opposite to the inner side surface of the upper cover body 200.

The process chamber 100 is provided with a first inlet hole 102 and a second inlet hole 103, and the first inlet hole 102 and the second inlet hole 103 are both communicated with the process space 101. The first inlet 102 and the second inlet 103 are used for feeding process gas into the process space 101. In the epitaxial growth process, at least the first gas introduction hole 102 among the first gas introduction hole 102 and the second gas introduction hole 103 supplies a process gas for epitaxial growth into the process space 101. In the cleaning etching process, the first gas inlet hole 102 and the second gas inlet hole 103 can both supply etching gas for cleaning etching into the process space 101. Of course, in the cleaning and etching process, at least the second gas inlet hole 103 of the first gas inlet hole 102 and the second gas inlet hole 103 delivers etching gas into the process space 101.

Wherein the first aperture of the first gas inlet hole 102, which communicates with the process space 101, faces a first direction, which means that the axis of the aperture is parallel to the first direction, which in the present embodiment is parallel to the support surface 310. Of course, the support surface 310 may be a horizontal surface. During the epitaxial growth process, the process gas delivered by the first gas inlet hole 102 is delivered into the process space 101 through the first opening facing the first direction, and the process gas sweeps across the wafer on the supporting surface 310, thereby realizing the epitaxial deposition.

The second openings of the second gas inlet holes 103, which communicate with the process space 101, are directed in a second direction, which intersects the first direction. Of course, the second orifice may face the upper cover body 200. Since the orientation of the second aperture of the second gas inlet hole 103, which communicates with the process space 101, intersects the first direction, i.e. the second direction intersects the first direction. In this case, therefore, the etching gas introduced into the process space 101 during the cleaning etching process through the second gas inlet hole 103 communicating with the process space 101 flows toward the position where the inner side surface of the upper cover body 200 is located.

The epitaxial process equipment disclosed in the embodiment of the application improves the structure of the epitaxial process equipment in the related art, so that the process cavity 100 is provided with the first air inlet hole 102 and the second air inlet hole 103 which are communicated with the process space 101, and meanwhile, the first orifice of the second air inlet hole 103, which is communicated with the process space 101, faces the second direction and intersects with the first direction, and by adopting the structure, in the process of cleaning and etching the epitaxial process equipment, etching gas for cleaning and etching can be conveyed towards the upper cover body 200 through the second orifice of the second air inlet hole 103, so that the etching gas can easily flow towards the inner side surface of the upper cover body 200, and the cleaning and etching gas flow with higher concentration can be easily obtained on the inner side surface of the upper cover body 200 in the cleaning and etching process, and finally, the inner side surface of the upper cover body 200 can be cleaned and etched more sufficiently, and the purpose of improving the cleaning effect is achieved.

In an alternative, the second direction may be perpendicular to the first direction. That is, the second gas inlet holes 103 may be oriented perpendicular to the first direction, and this structure enables the etching gas flowing into the process space 101 through the second gas inlet holes 103 to flow toward the inner side surface of the upper cover 200 more easily during the cleaning etching process, which is undoubtedly beneficial to improving the cleaning etching effect on the inner side surface of the upper cover 200.

As described above, at least the second gas inlet hole 103 delivers the etching gas into the process space 101 during the cleaning of the etching process. In a preferred embodiment, in order to improve the introduction efficiency of the etching gas, both the first gas inlet hole 102 and the second gas inlet hole 103 are used for delivering the etching gas into the process space 101 during the cleaning and etching process. Wherein the air intake path of a first port of the first air intake vent 102 communicating with the process space 101 intersects with the air intake path of a second port of the second air intake vent 103 communicating with the process space 101. In this case, the etching gas entering the process space 101 through the second gas inlet hole 103 may impact the etching gas entering the process space 101 through the first gas inlet hole 102, so that the two etching gases may tilt upwards relative to the first direction, and finally, the etching gas for cleaning and etching may better approach the inner side surface of the upper cover 200, thereby achieving the purpose of better cleaning and etching.

In order to improve the mixing effect of the etching gas flowing out from the first orifice and the etching gas flowing out from the second orifice, in a preferred scheme, the projections of the first orifice and the second orifice on the plane where the supporting surface 310 is located at least partially overlap, and in this way, when two flows of etching gas flow into the process space 101 from the first orifice and the second orifice, a strong impact can be formed, so that the etching gas can be better diffused in the process space, and the surface of a component needing to be cleaned in the process space 101 can be cleaned and etched.

In further aspects, the process chamber 100 may include a first annular liner 120, a second annular liner 130, and a gas inlet partition 140. The first annular liner 120 is disposed around the susceptor 300, and the second annular liner 130 is disposed at the edge of the inner side surface of the upper cover 200, and is disposed coaxially with the first annular liner 120. Specifically, the central axes of the first annular liner 120 and the second annular liner 130 are collinear and both perpendicular to the support surface 310.

The first annular liner 120 is provided with a first groove 121, and the first annular liner 120 is used for forming an air inlet channel between the inner wall enclosed by the first groove 121 and the second annular liner 130. An intake partition 140 is provided in the intake passage, and partitions the intake passage into the first intake holes 102 and the second intake holes 103. In this case, the division of the intake passage into the first intake holes 102 and the second intake holes 103 by the intake partition 140 is undoubtedly more advantageous in the formation of the first intake holes 102 and the second intake holes 103.

The epitaxial process apparatus disclosed in this embodiment may further include a preheating ring 400, and the preheating ring 400 is supported on the first annular liner 120 and disposed around the susceptor 300. In this case, the first annular liner 120 not only cooperates with the second annular liner 130 to form an air inlet channel, thereby providing a precondition for the arrangement of the subsequent air inlet partition 140 in the air inlet channel, but also supports the preheating ring 400, and it is obvious that this technical solution can realize dual purposes for the first annular liner 120, thereby being beneficial to reducing components and simplifying the structure of the epitaxial process equipment.

Optionally, the first annular liner 120 may further be provided with a second groove 122, an inner wall of the first annular liner 120 for enclosing the second groove 122 and the second annular liner 130 form the air outlet channel 104, and an air inlet of the air outlet channel 104 is opposite to the first aperture along the first direction. Specifically, the gas inlet and the first aperture of the gas outlet channel 104 may be located on two opposite sides of the susceptor 300, respectively. The arrangement of the air outlet channel 104 can realize the air exhaust of the epitaxial process equipment in the process. Of course, the first annular liner 120 is also used to cooperate with the second annular liner 130 to form the outlet passage 104, further making the first annular liner 120 versatile, which also facilitates the reduction of components and the simplification of the epitaxial process equipment.

Referring again to fig. 1 and 3, in one embodiment, the second annular liner 130 may include a first straight line segment 131, the first straight line segment 131 is parallel to the first direction, the first groove 121 has a bottom wall 1211 and a first sidewall 1212 perpendicular thereto and adjacent to the base 300, the air inlet partition 140 includes a third straight line segment 141, and a first air inlet section 1021 is formed between the third straight line segment 141 and the first straight line segment 131. The first intake hole 102 includes a first intake section 1021. The first air inlet section 1021 extends along a direction parallel to the first direction, and an opening of the first air inlet section 1021, which is directly communicated with the process space 101, is a first opening of the first air inlet 102. That is, the opening of the first air inlet section 1021 communicating with the process space 101 faces the first direction to serve as the first opening of the first air inlet hole 102.

A second air intake section 1031 is formed between the third straight section 141 and the first side wall 1212, the second air intake section 1031 extends in a direction perpendicular to the first direction, and the second air intake hole 103 includes the second air intake section 1031. The opening of the second air inlet section 1031 which communicates directly with the process space 101 is a second opening of the second air inlet hole 103. The structure can make full use of the existing structure of the first groove 121 to form the first air inlet hole 102 and the second air inlet hole 103 respectively meeting the orientation requirements of the first opening and the second opening, and is easy to realize.

In a further embodiment, the second annular liner 130 may further include a second straight line segment 132 connected to and perpendicular to the first straight line segment 131, the second straight line segment 132 is opposite to the first groove 121, the second straight line segment 132 extends from the first straight line segment 131 in a direction close to the bottom wall 1211, the second straight line segment 132 and the third straight line segment 141 form a third air intake segment 1022, the air intake partition 140 further includes a fourth straight line segment 142, the fourth straight line segment 142 is connected to and perpendicular to the third straight line segment 141, the fourth straight line segment 142 and the second straight line segment 132 form a fourth air intake segment 1023, the third air intake segment extends in a direction perpendicular to the first direction, and the first air intake segment 1021 and the fourth air intake segment 1023 are respectively connected to two ends of the third air intake segment 1022 and extend in a direction away from the third air intake segment 1022. The first intake apertures 102 include a third intake section 1022 and a fourth intake section 1023.

The fourth straight section 142 and the bottom wall 1211 form a fifth air intake section 1032 therebetween, the fifth air intake section 1032 is perpendicular to the second air intake section 1031 and extends away from the base 300, and the second air intake hole 103 includes the fifth air intake section 1032. In this way, the second air inlet section 1031 and the fifth air inlet section 1032 can be communicated to form the L-shaped second air inlet hole 103, and the first air inlet section 1021, the third air inlet section 1022 and the fourth air inlet section 1023 can form the Z-shaped first air inlet hole 102. This configuration makes it easier to form a curved gas inlet hole to buffer the gas entering the process space 101, avoiding too fast a gas flow rate as input in the process space 101. At the same time, it is also easier to make the first aperture of the first air intake hole 102 and the second aperture of the second air intake hole 103 meet the requirements in terms of orientation.

In the embodiment of the present application, one of the air inlet partition 140 and the inner wall of the first groove 121 may be provided with a protrusion 143, and the protrusion 143 is supported between the inner wall of the first groove 121 and the air inlet partition 140, so that the second air inlet hole 103 is formed between the air inlet partition 140 and the inner wall of the first groove 121. Specifically, the protrusion 143 may be integrated with the inner wall surrounding the first groove 121, and of course, the protrusion 143 may also be integrated with the air inlet partition 140. This is advantageous in achieving the separation of the first intake ports 102 and the second intake ports 103.

In a further embodiment, the process chamber 100 may further include a base ring 150 and a lower cover 110, the base ring 150 is disposed around the first annular liner 120, the second annular liner 130 and the gas inlet partition 140, the lower cover 110 and the upper cover 200 are respectively fixed to the top end and the bottom end of the base ring 150 in a sealing manner, the base ring 150 is provided with a first engaging channel 151 and a second engaging channel 152, the first engaging channel 151 is communicated with the first gas inlet 102, and specifically, the first engaging channel 151 may be communicated with the first gas inlet 102 by being communicated with the fourth gas inlet 1023. The second connecting channel 152 is communicated with the second air intake hole 103, and specifically, the second connecting channel 152 can be communicated with the second air intake hole 103 through the communication with the fifth air intake section 1032.

The base ring 150, as a peripheral component, can be respectively communicated with the first gas inlet hole 102 and the second gas inlet hole 103 through the first engaging channel 151 and the second engaging channel 152, thereby facilitating the gas supply connection of the gas source outside the epitaxial process equipment.

Specifically, the epitaxy processing equipment disclosed in the embodiment of the present application may further include a first air pipeline 500 and a second air pipeline 600, the first air pipeline 500 is communicated with the first joining channel 151, the second air pipeline 600 is communicated with the second joining channel 152, and in the process of the epitaxy processing equipment in the epitaxy growth process, the first air pipeline 500 is in a conducting state, and the second air pipeline 600 is in a closed state; during the cleaning process of the epitaxial process equipment, the second air pipe 600 is in a conducting state and the first air pipe 500 is in a conducting state.

The utility model discloses what the key description was in above embodiment is the difference of each embodiment, and the optimization characteristic of the difference of each embodiment is as long as not contradictory, all can make up and form more preferred embodiment, considers that the literary composition is succinct, then no longer gives details here.

The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.

Claims

1. An epitaxy process device is characterized by comprising a process cavity (100), an upper cover body (200) and a base (300), wherein the upper cover body (200) is arranged at the upper end of the process cavity (100), the base (300) is arranged between the upper cover body (200) and the process cavity (100), the upper cover body (200), the base (300) and the process cavity (100) enclose a process space (101), the base (300) is provided with a supporting surface (310) for bearing a wafer, the process cavity (100) is provided with a first air inlet hole (102) and a second air inlet hole (103) which are communicated with the process space (101), a first opening of the first air inlet hole (102) communicated with the process space (101) faces a first direction, the first direction is parallel to the supporting surface (310), a second opening of the second air inlet hole (103) communicated with the process space (101) faces a second direction, and the second direction intersects with the first direction.

2. The epitaxial process apparatus of claim 1, wherein the second direction is perpendicular to the first direction.

3. The epitaxial process equipment of claim 1, wherein the process chamber (100) comprises a first annular liner (120), a second annular liner (130), and a gas inlet partition (140), wherein:

first annular inside lining (120) encircle base (300) set up, second annular inside lining (130) are located the edge of the inside surface of upper cover body (200), and with first annular inside lining (120) coaxial arrangement, first annular inside lining (120) are equipped with first recess (121), the inner wall that is used for enclosing of first annular inside lining (120) becomes first recess (121) with form air intake passage between second annular inside lining (130), admit air separator (140) locate in the air intake passage, and will air intake passage separates into first inlet port (102) with second inlet port (103).

4. The epitaxial process equipment according to claim 3, wherein the first annular liner (120) is provided with a second groove (122), an air outlet channel (104) is formed between an inner wall of the first annular liner (120) for enclosing the second groove (122) and the second annular liner (130), and an air inlet of the air outlet channel (104) is opposite to the first aperture along the first direction.

5. Epitaxial process plant according to claim 3, characterized in that the second annular liner (130) comprises a first straight section (131), the first straight section (131) being parallel to the first direction, the first groove (121) having a bottom wall (1211) and a first side wall (1212) perpendicular thereto and adjacent to the base (300), the air intake partition (140) comprising a third straight section (141), the third straight section (141) and the first straight section (131) forming a first air intake section (1021) therebetween, the first air intake hole (102) comprising the first air intake section (1021), the first air intake section (1021) extending in a direction parallel to the first direction, the first air intake section (1021) having its orifice in direct communication with the process space (101) being the first orifice;

a second air inlet section (1031) is formed between the third straight-line section (141) and the first side wall (1212), the second air inlet section (1031) extends along a direction perpendicular to the first direction, the second air inlet hole (103) comprises the second air inlet section (1031), and an opening of the second air inlet section (1031) directly communicated with the process space (101) is the second opening.

6. The epitaxial process equipment of claim 5, wherein the second annular liner (130) further comprises a second straight line segment (132), the second straight line segment (132) is opposite to the first groove (121), the second straight line segment (132) is perpendicular to the first straight line segment (131), the second straight line segment (132) extends from the first straight line segment (131) in a direction close to the bottom wall (1211), the second straight line segment (132) and the third straight line segment (141) form a third air inlet segment (1022), the air inlet partition (140) further comprises a fourth straight line segment (142), the fourth straight line segment (142) is connected to and perpendicular to the third straight line segment (141), the fourth straight line segment (142) and the second straight line segment (132) form a fourth air inlet segment (1023), the first air inlet hole (102) comprises the third air inlet segment (1022) and the fourth air inlet segment (1023), the third air inlet segment (1022) extends in a direction perpendicular to the first air inlet segment (1022), and two ends of the third air inlet segment (1023) extend away from the third air inlet segment (1022) and the third air inlet segment (1023) in a direction perpendicular to the first air inlet segment (1022) and away from the first air inlet segment (1023);

a fifth air inlet section (1032) is formed between the fourth straight line section (142) and the bottom wall (1211), the fifth air inlet section (1032) is perpendicular to the second air inlet section (1031) and extends towards the direction far away from the base (300), and the second air inlet hole (103) comprises the fifth air inlet section (1032).

7. Epitaxial process equipment according to claim 3, characterized in that one of the gas inlet partition (140) and the inner wall of the first recess (121) is provided with a projection (143), the projection (143) being supported between the inner wall of the first recess (121) and the gas inlet partition (140) so that the second gas inlet hole (103) is formed between the gas inlet partition (140) and the inner wall of the first recess (121).

8. Epitaxial process equipment according to claim 3, characterized in that the process chamber (100) further comprises a base ring (150) and a lower lid (110), the base ring (150) is arranged around the first annular liner (120), the second annular liner (130) and the gas inlet partition (140), the upper lid (200) and the lower lid (110) are sealingly fixed to the top and bottom ends of the base ring (150), respectively, the base ring (150) is provided with a first engagement channel (151) and a second engagement channel (152), the first engagement channel (151) is in communication with the first gas inlet hole (102), and the second engagement channel (152) is in communication with the second gas inlet hole (103).

9. The epitaxy processing equipment according to claim 8, further comprising a first gas pipeline (500) and a second gas pipeline (600), wherein the first gas pipeline (500) is communicated with the first joining channel (151), the second gas pipeline (600) is communicated with the second joining channel (152), and during the epitaxy processing of the epitaxy processing equipment, the first gas pipeline (500) is in a conducting state, and the second gas pipeline (600) is in a closed state; when the epitaxial growth equipment is in the cleaning process, the second air pipeline (600) is in a conducting state, and the first air pipeline (500) is in a conducting state.

10. Epitaxy process apparatus according to any of claims 1 to 9, wherein the first aperture and the second aperture at least partially overlap in projection on the plane of the support surface (310).