CN218473674U - 一种用pcb替代铜排的变频器主回路结构 - Google Patents
一种用pcb替代铜排的变频器主回路结构 Download PDFInfo
- Publication number
- CN218473674U CN218473674U CN202221856404.7U CN202221856404U CN218473674U CN 218473674 U CN218473674 U CN 218473674U CN 202221856404 U CN202221856404 U CN 202221856404U CN 218473674 U CN218473674 U CN 218473674U
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- Prior art keywords
- loop structure
- heat dissipation
- connecting plate
- pcb
- copper bar
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 18
- 239000010949 copper Substances 0.000 title claims abstract description 18
- 230000017525 heat dissipation Effects 0.000 claims abstract description 29
- 238000005057 refrigeration Methods 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 13
- 238000009423 ventilation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 230000002349 favourable effect Effects 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 9
- 238000004378 air conditioning Methods 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 4
- 230000003139 buffering effect Effects 0.000 description 12
- 239000012634 fragment Substances 0.000 description 9
- 230000002035 prolonged effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN202221856404.7U CN218473674U (zh) | 2022-07-19 | 2022-07-19 | 一种用pcb替代铜排的变频器主回路结构 |
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CN202221856404.7U CN218473674U (zh) | 2022-07-19 | 2022-07-19 | 一种用pcb替代铜排的变频器主回路结构 |
Publications (1)
Publication Number | Publication Date |
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CN218473674U true CN218473674U (zh) | 2023-02-10 |
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CN202221856404.7U Active CN218473674U (zh) | 2022-07-19 | 2022-07-19 | 一种用pcb替代铜排的变频器主回路结构 |
Country Status (1)
Country | Link |
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CN (1) | CN218473674U (zh) |
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2022
- 2022-07-19 CN CN202221856404.7U patent/CN218473674U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240513 Address after: No. 607, No. 606, 31st Floor, Nongguang East Lane, Chaoyang District, Beijing, 100000 Patentee after: Jiao Xuejun Country or region after: China Patentee after: Zhao Chunfu Patentee after: Lv Jianhong Address before: 215000 No. 70 Emeishan Road, science and Technology City, high tech Zone, Suzhou City, Jiangsu Province (3rd floor of No. 5 plant) Patentee before: Merckwell transmission technology (Suzhou) Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240611 Address after: No. 101, Courtyard 1, 100 meters north of the intersection of Xiaoyuehe East Road and Yinquan Road, Haidian District, Beijing, 100000 Patentee after: Beijing Dongxin Power Equipment Installation Co.,Ltd. Country or region after: China Address before: No. 607, No. 606, 31st Floor, Nongguang East Lane, Chaoyang District, Beijing, 100000 Patentee before: Jiao Xuejun Country or region before: China Patentee before: Zhao Chunfu Patentee before: Lv Jianhong |