CN218352498U - Wireless transmission device - Google Patents
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- CN218352498U CN218352498U CN202222043477.0U CN202222043477U CN218352498U CN 218352498 U CN218352498 U CN 218352498U CN 202222043477 U CN202222043477 U CN 202222043477U CN 218352498 U CN218352498 U CN 218352498U
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Abstract
A wireless transmission device is suitable for being coupled with a base frequency module and a radio frequency antenna module respectively and comprises an output module, an input module, a power amplification module and a radio frequency switch module, wherein the length of a grid stage of each transistor in the radio frequency switch module is increased to be more than one micron, so that a decibel compression point of the radio frequency switch module can be effectively improved.
Description
Technical Field
The present invention relates to a wireless transmission device, and more particularly to a radio frequency switch module formed by transistors with a large gate length and a wireless transmission device having the same.
Background
Early wireless communication systems were primarily based on analog wireless communication signals, such as: advanced Mobile Phone Service (AMPS), nordic mobile phone (NMT), total Access Communication System (TACS), and other first generation mobile communication systems are mostly applied to the transmission of voice signals, however, since analog wireless communication signals are easily interfered, the security is not good, and the expansion function is not sufficient, the new generation wireless communication systems are all digital wireless communication systems.
Referring to fig. 1, a wireless transmission device 9 (Transceiver module) is illustrated, which is respectively coupled to a baseband module 700 and a radio frequency antenna module 800, the wireless transmission device 9 includes an output module 91 for receiving a digital wireless communication signal output by the baseband module 700, an input module 92 for outputting a digital wireless communication signal to the baseband module 700, a power amplification module 93 coupled to the output module 91 for amplifying a power of the digital wireless communication signal output by the output module 91, and a radio frequency switch module 94 coupled to the radio frequency antenna module 800 for receiving or transmitting the digital wireless communication signal.
The output module 91 has a plurality of output devices 911 (e.g., TX) 1 ~TX n Shown), a plurality of input elements 921 (e.g., RX) are provided in the input module 92 1 ~RX m Shown), a plurality of power amplification elements 931 (e.g., PAs) are disposed in the power amplification module 93 1 ~PA n Shown).
Taking a GSM900 digital wireless communication system as an example, the one-decibel compression point (P1 dB) of the rf switch module 94 is specified to be greater than 35dBm, and the so-called one-decibel compression point P1dB has the following physical meanings: in an rf switch module 94, a range of linear dynamic Output Power is indicated, that is, for a GSM900 digital wireless communication system, when the Input Power (Power Input, PI) is less than 35dBm, the Output Power (Power Output, PO) is linear with the Input Power.
Referring to fig. 2, an rf switch module 94 is illustrated, which includes a plurality of transistors 9411 to 9419 and is formed by a series/parallel combination of the transistors 9411 to 9414 in fig. 2, which is to be noted that the series/parallel combination of the transistors 9411 to 9414 in fig. 2 is only an example, and the circuit combination in the prior art may have a plurality of equivalent embodiments, and thus is not limited to the combination of the example.
Referring to fig. 2 and 3, since the rf switch module 94 is limited in application by the specification limit of one-decibel compression point P1dB, when one transistor (especially, the transistors 9412, 9413, 9415, 9416, 9418, 9419, etc. located at the receiving end) is fabricated through a semiconductor process, three Gate electrodes 993 (3G) with a length of 1 μm are disposed between the Drain electrode 991 (Drain) and the Source electrode 992 (Source), and when the rf antenna module 800 looks at the input module 92, at least six Gate electrodes 993 (6G) with a length of 1 μm must pass through one conductive path 810, so that in the prior art, the transistors 9412, 9413, 9415, 9416, 9418, 9419 located at the receiving end are disposed with three Gate electrodes 993 (3G) with a length of 1 μm between the Drain electrode 991 and the Source electrode 992, respectively, to satisfy the specification limit of one-decibel compression point P1dB of the rf switch module 94.
It should be noted that if only one gate 993 with a length of 1 μm is disposed between the drain 991 and the source 992 of each transistor, the one-decibel compression point P1dB of the radio frequency switch module 94 is only about 20dbm to 30dbm, and therefore, the relationship of specification limit cannot be applied to most digital wireless communication systems.
In addition, since the conductive path 810 must pass through at least six gates with a length of 1 μm, six equivalent resistors (not shown) must be added to satisfy the impedance matching condition, which also greatly increases the area of the rf switch module 94.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a wireless transmission device, the length that increases its grid level is for being greater than a micron for this radio frequency switch module's a minute shell compression point can effectively promote.
The wireless transmission device is suitable for being coupled with a base frequency module and a radio frequency antenna module respectively, and comprises an output element, an input element, a power amplification element and a radio frequency switch module.
The output element is coupled to the baseband module to receive a digital wireless communication signal from the baseband module.
The input element is coupled to the baseband module to output a digital wireless communication signal to the baseband module.
The power amplifying element is coupled to the output element to receive a digital wireless communication signal from the output element.
The radio frequency switch module is respectively coupled with the power amplifying element, the input element and the radio frequency antenna module, can be switched between a sending mode and a receiving mode, receives the digital wireless communication signal output by the power amplifying element when the radio frequency switch module is switched to the sending mode, and transmits a digital wireless communication signal to the input element when the radio frequency switch module is switched to the receiving mode.
The radio frequency switch module comprises a transmitting end transistor and a receiving end transistor, wherein the transmitting end transistor and the receiving end transistor are metal-oxide-semiconductor field effect transistors and respectively provided with a first end, a second end and a control end for controlling whether the first end and the second end are conducted, the first end of the transmitting end transistor is coupled with the power amplification element to receive digital wireless communication signals, the second end of the transmitting end transistor is coupled with the radio frequency antenna module to output digital wireless communication signals, the first end of the receiving end transistor is coupled with the radio frequency antenna module to receive digital wireless communication signals, the second end of the receiving end transistor is coupled with the input element to output the digital wireless communication signals, and the gate length of the transmitting end transistor or the receiving end transistor is more than one micron.
The present invention also provides a method for controlling a radio frequency switch module, the radio frequency switch module further includes a ground terminal transistor, the ground terminal transistor has a first end, a second end, and a control end for controlling whether the first end is conducted with the second end, the first end of the ground terminal transistor is coupled with the second end of the receiving terminal transistor to receive the digital wireless communication signal, and the second end of the ground terminal transistor is connected with a capacitor in series to receive a ground voltage.
The other technical means of the present invention is to switch the rf switch module to the sending mode, the control terminal of the transmitting terminal transistor receives a first control voltage to switch the first terminal and the second terminal, and the control terminal of the receiving terminal transistor receives a second control voltage to switch the first terminal and the second terminal.
The utility model discloses a further technical means lies in that when this radio frequency switch module switches over to this receiving mode, a first control voltage is received to the control end of this conveying end transistor, makes its first end and second end nonconducting, and a second control voltage is received to the control end of this receiving end transistor, makes its first end and second end switch on.
The present invention provides a method for manufacturing a transistor having a gate length ranging from five micrometers to ten micrometers.
Another object of the present invention is to provide a wireless transmission device.
The wireless transmission device is suitable for being coupled with a base frequency module and a radio frequency antenna module respectively, and comprises an output module, an input module, a power amplification module, a radio frequency switch module and a duplex module.
The output module is coupled to the baseband module and receives a digital wireless communication signal from the baseband module.
The input module is coupled to the baseband module for transmitting digital wireless communication signals to the baseband module.
The power amplification module is coupled with the output module to receive the digital wireless communication signal from the output module.
The radio frequency switch module is respectively coupled with the power amplification module and the input module, and can be switched between a sending mode and a receiving mode, when the radio frequency switch module is switched to the sending mode, the radio frequency switch module receives a digital wireless communication signal output by the power amplification module, and when the radio frequency switch module is switched to the receiving mode, the radio frequency switch module transmits a digital wireless communication signal to the input module.
The duplex module is respectively coupled with the radio frequency switch module and the radio frequency antenna module to receive the digital wireless communication signal output by the radio frequency switch module and output the digital wireless communication signal to the radio frequency antenna module, or receive the digital wireless communication signal output by the radio frequency antenna module and output the digital wireless communication signal to the radio frequency switch module.
Another technical means of the present invention is to provide the rf switch module further comprising a ground terminal transistor, wherein the ground terminal transistor has a first end, a second end, and a control end for controlling whether the first end is conducted with the second end, the first end of the ground terminal transistor is coupled with the second end of the receiving terminal transistor to receive the digital wireless communication signal, and the second end of the ground terminal transistor is connected with a capacitor in series to receive a ground voltage.
The utility model discloses a further technical means lies in that when this radio frequency switch module switches over to this send mode, a first control voltage is received to the control end of this conveying end transistor, makes its first end and second end switch on, and a second control voltage is received to the control end of this receiving end transistor, makes its first end and second end switch off.
The present invention provides a method for controlling a radio frequency switch module, which comprises receiving a first control voltage from a control terminal of a transmitting terminal transistor to make a first terminal and a second terminal of the transmitting terminal transistor non-conductive, and receiving a second control voltage from the control terminal of a receiving terminal transistor to make the first terminal and the second terminal conductive.
Another technical means of the present invention is to provide the gate length of the transmitting transistor or the receiving transistor is within a range from five micrometers to ten micrometers.
The beneficial effects of the utility model reside in that, the gate length that utilizes to increase a transistor for this transistor can bear higher voltage and can not be punctured, and then makes the value of one shellfish compression point of this radio frequency switch module effectively promote to 30 in 45dBm on, in addition, this neotype efficiency can effectively reduce the gate resistance quantity that this radio frequency switch module required to use, and can reduce the area of this radio frequency switch module.
Drawings
Fig. 1 is a system block diagram of a prior art wireless transmission device;
FIG. 2 is a schematic diagram of a prior art RF switch module;
FIG. 3 is a schematic top view of a prior art transistor with drain, source and three gates;
FIG. 4 is a schematic cross-sectional view of a basic NMOS transistor structure;
FIG. 5 is a cross-sectional view of an NFET breakdown event;
fig. 6 is a block diagram of a wireless transmission device according to a first preferred embodiment of the present invention;
FIG. 7 is a top view of a transistor with drain, source and gate electrodes according to the first preferred embodiment;
fig. 8 is a block diagram of a wireless transmission device according to a second preferred embodiment of the present invention;
fig. 9 is a block diagram of a wireless transmission device according to a third preferred embodiment of the present invention;
fig. 10 is a top view of a combination of a set of transistors in the wireless transmission device according to a fourth preferred embodiment of the present invention; and
FIG. 11 is an equivalent circuit diagram of the set of transistors of the fourth preferred embodiment.
In the figure:
c, capacitance; v G A gate voltage; v C1 A first control voltage; v C2 Second control voltage ； 1, a wireless transmission device; 11 an output module; 111 an output element; 12 an input module; 121 an input element; 13 a power amplification module; 131 a power amplifying element; 14 radio frequency switch module; 1411 to 1419 transistors; 15 a duplexing module; 181 a conductive pathway; 182 a conductive path; 191 a drain stage; 192 source stage; 193 a gate electrode; 200 fundamental frequency modules; 300 a radio frequency antenna module; 401N-type silicon electrode; 402 an N-type silicon electrode; a 403N-type silicon electrode; 404 an N-type silicon electrode; 405 a metal oxide gate; 501N-type mosfet; 502N-type mosfet; 503N-type mosfet; 7 a metal oxide semiconductor field effect transistor; 71 a P-type substrate; 72 grid stage; 73 leakage stage; 74 source stage; a 70 depletion layer; 700 fundamental frequency module; 800 a radio frequency antenna module; 810 conductive paths; 9 a wireless transmission device; 91 an output module; a 911 output element; 92 an input module; 921 an input element; 93 a power amplification module; 931 a power amplification module; 94 radio frequency switch module; 9411 to 9419 transistors; 991 leakage stage; 992 source level; 993 gate.
Detailed Description
The features and technical content of the present invention will become apparent from the following detailed description of a preferred embodiment, which is to be read in connection with the accompanying drawings. Before proceeding with the detailed description, it should be noted that like elements are represented by like reference numerals.
First, before explaining the technical contents of the present invention, the physical characteristics of a transistor related to the features of the present invention will be explained as follows:
for example, referring to fig. 4, a basic structure of an N-type metal oxide semiconductor field effect transistor 7 (MOSFET) is illustrated, which includes a P-type substrate 71 (P-substrate), a gate 72, a drain 73, and a source 74, when the gate 72 of the N-type MOSFET 7 receives a gate voltage V G The gate-source voltage difference V of the N-type MOSFET 7 is generated GS Greater than a critical voltage V TH Then, the self of the gate 72Holes (i.e., positive charges) are repelled from beneath the gate 72 and create a Depletion region 70 of length L.
Referring to FIG. 5, when the gate voltage V is applied G When gradually increased, the depletion layer of the drain 73 will extend to the source 74, so that the current of the N-type MOSFET 7 is no longer applied by the gate voltage V G Control, therefore, this phenomenon is called Punch through (Punch). In other words, when the gate voltage V is applied G When the voltage is increased to a certain level, the NMOS 7 will be driven by the excessive gate voltage V G Breakdown occurs, which in turn causes the NFET 7 to lose its effectiveness.
From the theory described above, it can be seen that as the length L of the depletion layer is longer, a higher gate voltage V is required G The N-type mosfet 7 can be broken down, so that the present invention is focused on designing a transistor with a depletion layer of a longer length to be applied to a radio frequency switch module, so that the radio frequency switch module can receive a higher voltage without the occurrence of the phenomenon that the transistor is broken down, and thus, the radio frequency switch module can be effectively applied to a digital wireless communication system with a higher output power.
Furthermore, the related art of the present invention is applicable to a digital wireless communication system, for example: second generation (2G) mobile communication systems such as GSM900, GSM1800, CDMA, etc., third generation (3G) mobile communication systems such as WCDMA, CDMA2000, TDSCDMA, etc., fourth generation (4G) mobile communication systems such as LTE, 802.16n, etc., fifth generation mobile communication technology (english: 5th generation mobile networks, abbreviated as 5G), and other digital wireless communication systems such as WiFi, wiMAX, 802.11a, 802.11b, 802.11G, DCS, PCS, etc., therefore, for wireless communication systems (e.g., first generation (1G) mobile communication systems) mainly using analog wireless communication signals, the scope covered by the present invention is not included, and certainly the similar technology in the related art is not enough to affect the novelty of the present invention.
Refer to FIG. 6, which is a drawing of the present embodimentWith the first preferred embodiment of the novel wireless transmission apparatus 1, the wireless transmission apparatus 1 is adapted to be coupled with a baseband module 200 and an rf antenna module 300, respectively, the wireless transmission apparatus 1 comprises an output module 11, an input module 12, a power amplification module 13, and an rf switch module 14, wherein the output module 11 comprises a plurality of output devices 111 (e.g., TX 1 ~TX n Shown), the input module 12 includes a plurality of input elements 121 (e.g., RX) 1 ~RX m Shown), the power amplification module 13 includes a plurality of power amplification elements 131 (e.g., PAs) 1 ~PA n Shown), and the rf switch module 14 includes a plurality of transistors 1411 to 1419 (hereinafter, the transistors 1411, 1414 and 1417 are respectively referred to as a transmitting-side transistor, the transistors 1412, 1415 and 1418 are respectively referred to as a receiving-side transistor, and the transistors 1413, 1416 and 1419 are respectively referred to as a grounding-side transistor).
The output module 11 is coupled to the baseband module 200 and the power amplification module 13, the power amplification module 13 is coupled to the rf switch module 14, the rf switch module 14 is coupled to the rf antenna module 300 for outputting a digital wireless communication signal, and the input module 12 is coupled to the baseband module 200 and the rf switch module 14 for receiving a digital wireless communication signal.
The rf switch module 14 has a plurality of transistors 1411 to 1419, each of the transistors 1411 to 1419 has a first end, a second end, and a control end for controlling whether the first end and the second end are conducted, and the first ends of the plurality of transmitting- end transistors 1411, 1414 and 1417 and the power amplifying element 131 (PA) of the power amplifying module 13 respectively 1 、PA 2 、PA n ) Coupled to receive the power amplification elements 131 (PA) 1 、PA 2 、PA n ) Output digital wireless communication signals, second terminals of the transmitting- side transistors 1411, 1414 and 1417 are coupled to the RF antenna module 300 for outputting the digital wireless communication signals, and first terminals of the receiving- side transistors 1412, 1415 and 1418 are respectively coupled to the RF antenna module 300 for receiving a digital wireless communication signalDigital wireless communication signals, and the second terminals of the receiving- side transistors 1412, 1415, 1418 are respectively connected to the input element 121 (RX) of the input module 12 1 、RX 2 、RX m ) The ground transistors 1413, 1416, 1419 are coupled to receive the digital wireless communication signal at first terminals thereof and coupled to second terminals of the receiving transistors 1412, 1415, 1418, respectively, and the ground transistors 1413, 1416, 1419 are coupled to receive a ground voltage (GND) at second terminals thereof in series with a capacitor C, respectively.
The utility model discloses a wireless transmission device's signal transmission can distinguish and send signal path and a received signal path, explains as follows respectively:
1. transmission signal path:
the output module 11 receives a digital wireless communication signal outputted from the baseband module 200 and outputs the digital wireless communication signal to the power amplification module 13, the power amplification module 13 amplifies the power of the digital wireless communication signal and outputs the digital wireless communication signal to the rf switch module 14, at this time, the rf switch module 14 is switched to a transmission mode, that is, the control terminals of the transistors 1411, 1414 and 1417 respectively receive a first control voltage V C1 To control the conduction of the first terminal and the second terminal, and the control terminals of the transistors 1412, 1415, 1418, 1413, 1416, 1419 respectively receive a second control voltage V C2 To control the first terminal and the second terminal to be non-conductive, and then the digital wireless communication signal is transmitted to the rf antenna module 300 through the rf switch module 14 to send out the digital wireless communication signal.
2. Reception signal path:
after receiving a digital wireless communication signal, the rf antenna module 300 transmits the digital wireless communication signal to the rf switch module 14, and at this time, the rf switch module 14 is switched to a receiving mode, that is, the control terminals of the transmitting transistors 1411, 1414 and 1417 receive the first control voltage V C1 To control the first and second terminals to be non-conductive, and the control terminals of the transistors 1412, 1415, 1418, 1413, 1416, 1419 respectively receiveThe second control voltage V C2 To control the first terminal and the second terminal to be conducted, and then the digital wireless communication signal is transmitted to the input module 12 through the rf switch module 14.
In order to make the rf switch module 14 meet the specification of one-decibel compression point (P1 dB), and based on the theory regarding the physical characteristics of the depletion layer of one transistor, the receiving- side transistors 1412, 1415, 1418 and the ground- side transistors 1413, 1416, 1419 are designed as follows:
referring to fig. 7, taking the receiving-side transistor 1412 as an example (the remaining transistors 1415, 1418, 1413, 1416, and 1419 are also designed in the same manner), firstly, a gate 193 (1G) with a length L of 3 μm is disposed between the drain 191 and the source 192, and since the length L of the gate 193 of the transistor 1412 is 3 μm, which is longer than the length L of the gate of a transistor in the prior art, which is 1 μm, the length of the depletion layer in the receiving-side transistor 1412 can be increased, so that the receiving-side transistor 1412 can bear higher voltage, and thus, the one-decibel compression point of the rf switch module 14 of the preferred embodiment is larger, which is about 37 to 45dbm.
Of course, increasing the length L of the gate 193 of the receiving-side transistor 1412 to 3 μm is only an example, and the length L is not limited to 3 μm, as long as the gate length is changed within the range of 1.5 to 10 μm, so that the value of the decibel compression point of the rf switch module 14 can be increased.
In addition, in the preferred embodiment, when viewed from the direction from the rf antenna module 300 to the input module 12, only one gate 193 (1G) with a length L of 3 μm passes through one conducting path 181, or when viewed from the direction from the rf antenna module 300 to the ground voltage, only two gate (2G) 193 with a length L of 3 μm pass through one conducting path 182, so that, in the preferred embodiment, only one to two equivalent resistors (not shown) need to be added to complete impedance matching, and the area of the rf switch module 14 does not increase significantly.
Referring to fig. 8, a second preferred embodiment of the wireless transmission device 1 of the present invention is mostly different from the first preferred embodiment in that the output module 11 includes only one output device 111, the input module 12 includes only one input device 121, the power amplification module 13 includes only one power amplification device 131, and the rf switch module 14 includes only one transmitting-side transistor 1411, one receiving-side transistor 1412, and one grounding-side transistor 1413.
The output element 111 is coupled to the baseband module 200 and the power amplifying element 131, the power amplifying element 131 is coupled to the rf switch module 14, the rf switch module 14 is coupled to the rf antenna module 300 to output a digital wireless communication signal, and the input element 121 is coupled to the baseband module 200 and the rf switch module 14 to receive a digital wireless communication signal.
Each of the transistors 1411 to 1413 in the rf switch module 14 has a first end, a second end, and a control end for controlling whether the first end and the second end are turned on, the first end of the transmitting transistor 1411 is coupled to the power amplifying element 131 to receive the digital wireless communication signal output by the power amplifying element 131, the second end of the transmitting transistor 1411 is coupled to the rf antenna module 300 to output the digital wireless communication signal, the first end of the receiving transistor 1412 is coupled to the rf antenna module 300 to receive a digital wireless communication signal, the second end of the receiving transistor 1412 is coupled to the input element 121 to output the digital wireless communication signal, the first end of the grounding transistor 1413 is coupled to the second end of the receiving transistor 1412 to receive the digital wireless communication signal, and the second end of the grounding transistor 1413 is connected in series to a capacitor C to receive the ground voltage (ground).
The utility model discloses a wireless transmission device's signal transmission can be distinguished and be divided into a transmission signal route and a received signal route, explains as follows respectively:
1. transmission signal path:
the output device 111 receives a digital wireless communication signal outputted from the baseband module 200 and outputs the digital wireless communication signal to the power amplifying device 131, the power amplifying device 131 amplifies the power of the digital wireless communication signal and outputs the amplified digital wireless communication signal to the rf switch module 14, at this time, the rf switch module 14 is switched to a transmission mode, that is, the control terminal of the tx transistor 1411 receives the first control voltage V C1 To control the conduction of the first terminal and the second terminal, and the control terminals of the receiving terminal transistor 1412 and the grounding terminal transistor 1413 receive the second control voltage V C2 To control the first terminal and the second terminal to be non-conductive, the digital wireless communication signal is transmitted to the rf antenna module 300 through the rf switch module 14, so as to send out the digital wireless communication signal.
2. Reception signal path:
after receiving a digital wireless communication signal, the rf antenna module 300 transmits the digital wireless communication signal to the rf switch module 14, and at this time, the rf switch module 14 is switched to a receiving mode, that is, the control terminal of the transmitting terminal transistor 1411 receives the first control voltage V C1 To control the first terminal and the second terminal to be non-conductive, and the control terminals of the receiving terminal transistor 1412 and the grounding terminal transistor 1413 receive the second control voltage V C2 To control the first terminal and the second terminal to be conducted, and then the digital wireless communication signal is transmitted to the input element 121 through the rf switch module 14.
The structural design of the transistors 1412 and 1413 in the present preferred embodiment is the same as that described in the first preferred embodiment, and will not be described herein again.
Please refer to fig. 9, which is a third preferred embodiment of the wireless transmission device 1 of the present invention, the biggest difference between the third preferred embodiment and the first preferred embodiment is: the wireless transmission device 1 further comprises a duplex module 15, the duplex module 15 is coupled to the rf switch module 14 and the rf antenna module 300 respectively, preferably, the duplex module 15 is a duplexer (Diplexer)
The second terminals of the transmitting- side transistors 1411, 1414 and 1417 in the rf switch module 14 are respectively coupled to the first terminals of a corresponding receiving- side transistors 1412, 1415 and 1418, and then coupled to the duplex module 15, so as to receive a digital wireless communication signal outputted by the duplex module 15 or send a digital wireless communication signal to the duplex module 15.
The structure design of the receiving transistors 1412, 1415, 1418 and the grounding transistors 1413, 1416, 1419 in the preferred embodiment is the same as that of the first preferred embodiment, and will not be described again.
The utility model discloses a wireless transmission device 1's fourth preferred embodiment, with first, two, the biggest difference of three preferred embodiments in, can utilize semiconductor process technology, with a receiving terminal transistor or a earthing terminal transistor with the mode design of sharing bars stage manufacturing to further reduce the area of radio frequency switch module, its structural design mode is as follows:
referring to fig. 10, taking an N-type mosfet as an example, a plurality of N-type silicon electrodes 401 to 404 are arranged in parallel and spaced apart from each other, and a metal oxide gate 405 with a length L is disposed between every two N-type silicon electrodes. Assuming that two N- type silicon electrodes 401 and 402 and a metal oxide gate 405 therebetween are used, the N- type silicon electrodes 401 and 402 are respectively used as a drain and a source, and the metal oxide gate 405 is used as a gate, thereby forming an N-type mosfet, similarly, two N- type silicon electrodes 402 and 403 and the metal oxide gate 405 therebetween are used as a drain and a source, respectively, and the metal oxide gate 405 is used as a gate, thereby forming another N-type mosfet, so that the overall structure of the plurality of N-type silicon electrodes 401 to 404 and the metal oxide gate 405 can be regarded as a series combination of three N-type mosfets, and the equivalent circuit is shown in fig. 11, thereby forming 3N- type mosfets 501, 502, 503 connected in series.
Like the first preferred embodiment, the length L of the metal oxide gate 405 in this embodiment is at least greater than 1 μm.
The utility model discloses among the applied transistor (grid length L is 3 mu m) and the prior art transistor (grid length L is 1 mu m) is applied to the digital wireless communication system of a GSM900 (frequency is 820 to 920 MHz) and a GSM1800 (frequency is 1.72 to 1.92GHz) respectively during, the utility model discloses in because the length L of grid increases after being 3 mu m, consequently the transistor can bear higher voltage, and then makes its decibel compression point promote to 30 dBto 45m.
To sum up, the utility model discloses utilize the physical principle of the length of the depletion layer of a transistor and the critical value of this transistor grid voltage, after effectively increaseing the length of the grid of this transistor, use with the radio frequency switch module as among the digital wireless communication system for, make this radio frequency switch module can bear higher voltage, and then make one minute of this radio frequency switch module effectively promote to 30 to 45dBm by the value of compression point, simultaneously, compare in prior art, because the utility model discloses a quantity of grid reduces, so can effectively reduce equivalent resistance's quantity, and then make the area of this radio frequency switch module effectively reduce, consequently, the utility model discloses be applied to digital wireless communication system's scope will more can be more extensive, so can reach really the purpose of the utility model.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutes or changes made by the technical personnel in the technical field on the basis of the utility model are all within the protection scope of the utility model. The protection scope of the present invention is subject to the claims.
Claims (10)
1. A wireless transmission device, adapted to be coupled to a baseband module and a radio frequency antenna module, respectively, comprising:
an output element coupled to the baseband module for receiving digital wireless communication signals from the baseband module;
an input element coupled to the baseband module for outputting a digital wireless communication signal to the baseband module;
a power amplifying element coupled to the output element to receive the digital wireless communication signal from the output element; and
a radio frequency switch module, coupled to the power amplifying element, the input element, and the radio frequency antenna module, respectively, wherein the radio frequency switch module is capable of switching between a transmitting mode and a receiving mode, receiving a digital wireless communication signal output by the power amplifying element when the radio frequency switch module is switched to the transmitting mode, and transmitting a digital wireless communication signal to the input element when the radio frequency switch module is switched to the receiving mode;
the radio frequency switch module comprises a transmitting end transistor and a receiving end transistor, wherein the transmitting end transistor and the receiving end transistor are metal-oxide-semiconductor field effect transistors and respectively provided with a first end, a second end and a control end for controlling whether the first end and the second end are conducted, the first end of the transmitting end transistor is coupled with the power amplification element to receive a digital wireless communication signal, the second end of the transmitting end transistor is coupled with the radio frequency antenna module to output a digital wireless communication signal, the first end of the receiving end transistor is coupled with the radio frequency antenna module to receive the digital wireless communication signal, the second end of the receiving end transistor is coupled with the input element to output the digital wireless communication signal, and the grid length of the transmitting end transistor or the receiving end transistor is more than one micron.
2. The wireless transmission apparatus as claimed in claim 1, wherein the rf switch module further has a ground terminal transistor having a first terminal, a second terminal, and a control terminal for controlling whether the first terminal and the second terminal are turned on, the first terminal of the ground terminal transistor is coupled to the second terminal of the receiving terminal transistor for receiving the digital wireless communication signal, and the second terminal of the ground terminal transistor is connected in series to a capacitor for receiving a ground voltage.
3. The wireless transmission device as claimed in claim 1, wherein when the rf switch module is switched to the transmission mode, the control terminal of the transmitting transistor receives a first control voltage to turn on the first terminal and the second terminal, and the control terminal of the receiving transistor receives a second control voltage to turn off the first terminal and the second terminal.
4. The wireless transmission device as claimed in claim 1, wherein when the rf switch module is switched to the receiving mode, the control terminal of the transmitting transistor receives a first control voltage to make the first terminal and the second terminal of the transmitting transistor non-conductive, and the control terminal of the receiving transistor receives a second control voltage to make the first terminal and the second terminal of the receiving transistor conductive.
5. The wireless transmission device as claimed in claim 1, wherein the gate length of the transmitting side transistor or the receiving side transistor ranges from one point five micrometers to ten micrometers.
6. A wireless transmission apparatus adapted to be coupled to a baseband module and a radio frequency antenna module, respectively, comprising:
an output module coupled to the baseband module and receiving digital wireless communication signals from the baseband module;
an input module coupled to the baseband module for transmitting digital wireless communication signals to the baseband module;
a power amplification module coupled to the output module to receive digital wireless communication signals from the output module;
a radio frequency switch module, coupled to the power amplification module and the input module, respectively, the radio frequency switch module being capable of switching between a transmitting mode and a receiving mode, receiving a digital wireless communication signal output by the power amplification module when the radio frequency switch module is switched to the transmitting mode, and transmitting a digital wireless communication signal to the input module when the radio frequency switch module is switched to the receiving mode, the radio frequency switch module including a transmitting end transistor and a receiving end transistor, the transmitting end transistor and the receiving end transistor being mosfet and having a first end, a second end, and a control end for controlling whether the first end and the second end are conductive, the first end of the transmitting end transistor being coupled to the power amplification module to receive the digital wireless communication signal, and the second end thereof being coupled to the radio frequency antenna module to output the digital wireless communication signal, the first end of the receiving end transistor being coupled to the radio frequency antenna module to receive a digital wireless communication signal, and the second end thereof being coupled to the input module to output the digital wireless communication signal, the length of the transmitting end transistor or the receiving end transistor being greater than a micron; and
and the duplex module is respectively coupled with the radio frequency switch module and the radio frequency antenna module so as to receive the digital wireless communication signal output by the radio frequency switch module and output the digital wireless communication signal to the radio frequency antenna module, or receive the digital wireless communication signal output by the radio frequency antenna module and output the digital wireless communication signal to the radio frequency switch module.
7. The wireless transmission device as claimed in claim 6, wherein the RF switch module further comprises a ground terminal transistor having a first terminal, a second terminal, and a control terminal for controlling whether the first terminal and the second terminal are conducted, the first terminal of the ground terminal transistor is coupled to the second terminal of the receiving terminal transistor for receiving the digital wireless communication signal, and the second terminal of the ground terminal transistor is connected in series to a capacitor for receiving a ground voltage.
8. The wireless transmission device as claimed in claim 6, wherein when the RF switch module is switched to the transmission mode, the control terminal of the transmitting-side transistor receives a first control voltage to turn on the first terminal and the second terminal thereof, and the control terminal of the receiving-side transistor receives a second control voltage to turn off the first terminal and the second terminal thereof.
9. The wireless transmission device as claimed in claim 6, wherein when the RF switch module is switched to the receiving mode, the control terminal of the transmitting transistor receives a first control voltage to make the first terminal and the second terminal of the transmitting transistor non-conductive, and the control terminal of the receiving transistor receives a second control voltage to make the first terminal and the second terminal of the receiving transistor conductive.
10. The wireless transmission device as claimed in claim 6, wherein the gate length of the transmitting transistor or the receiving transistor ranges from one point five microns to ten microns.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222043477.0U CN218352498U (en) | 2022-08-04 | 2022-08-04 | Wireless transmission device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222043477.0U CN218352498U (en) | 2022-08-04 | 2022-08-04 | Wireless transmission device |
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| CN218352498U true CN218352498U (en) | 2023-01-20 |
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| CN202222043477.0U Active CN218352498U (en) | 2022-08-04 | 2022-08-04 | Wireless transmission device |
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