CN218335976U - Film bulk acoustic resonator and filter - Google Patents
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- CN218335976U CN218335976U CN202222334481.2U CN202222334481U CN218335976U CN 218335976 U CN218335976 U CN 218335976U CN 202222334481 U CN202222334481 U CN 202222334481U CN 218335976 U CN218335976 U CN 218335976U
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Abstract
The utility model discloses a film bulk acoustic wave syntonizer and wave filter. A thin film bulk acoustic resonator, comprising: the device comprises a substrate, a first electrode and a second electrode, wherein one side of the substrate is provided with a cavity; the oscillator is arranged on one side, provided with a cavity, of the substrate, the projection of the oscillator on the substrate covers the projection of the cavity on the substrate, and the oscillator is provided with a plurality of through holes connected with the cavity in a penetrating mode; the through holes are elliptical holes, the cross sections of the elliptical holes in the direction parallel to the plane of the substrate are elliptical, and the extending direction of the elliptical holes is perpendicular to the plane of the substrate; the reflecting structure is positioned on one side, far away from the substrate, of the second electrode. The resonance of transverse parasitic clutter can be effectively inhibited by adding the elliptical holes, and the reflection of the whole structure on the second electrode to transverse sound waves can be further enhanced by the design of the reflection structure on the second electrode, so that the energy leakage is reduced.
Description
Technical Field
The utility model relates to a syntonizer technique especially relates to a film bulk acoustic resonator and wave filter.
Background
With the rapid development of 5G communication technology, this directly results in higher and higher requirements for the performance and size of the filter, and in order to meet the performance requirements of the filter at high frequency, the filter based on Film Bulk Acoustic Resonator (FBAR) is the mainstream of the current research.
A commonly used FBAR filter is a sandwich structure of a first electrode-a piezoelectric layer-a second electrode, and in the prior art, the electrodes are designed into an irregular polygon to inhibit the transverse acoustic waves from forming harmonics and resonance in the pass band of the filter, thereby reducing the transverse energy leakage.
FBAR produced by the prior art generally has the problems of generation of transverse parasitic clutter and reduction of Q value caused by leakage, and the existing design is limited and cannot meet performance requirements under high frequency and high frequency. The utility model provides a new FBAR structure, adopt the oscillator to add the interior angle of opening a plurality of elliptical aperture, second electrode and cavity promptly and do fillet and handle, place reflection configuration's structure on the second electrode. Can effectively restrain the generation of horizontal parasitic clutter through adding the elliptical aperture, handle the energy that can restrain FBAR through doing the fillet to the interior angle of second electrode and cavity and reveal, then can further strengthen overall structure to the reflection of horizontal sound wave through design reflection configuration on the second electrode, reduce the energy and reveal.
SUMMERY OF THE UTILITY MODEL
The utility model provides a film bulk acoustic resonator and syntonizer both can effectively restrain horizontal sound wave and form harmonic and resonance in the wave filter passband, can improve the problem that sound wave energy transversely revealed again, improves the quality factor Q value of syntonizer.
In a first aspect, an embodiment of the present invention provides a film bulk acoustic resonator, including:
the device comprises a substrate, a first electrode and a second electrode, wherein one side of the substrate is provided with a cavity;
the oscillator is arranged on one side, provided with a cavity, of the substrate, the projection of the oscillator on the substrate covers the projection of the cavity on the substrate, and the oscillator is provided with a plurality of through holes connected with the cavity in a penetrating mode;
the through hole is an elliptical hole, the cross section of the elliptical hole along the direction parallel to the plane of the substrate is elliptical, and the extending direction of the elliptical hole is perpendicular to the plane of the substrate;
the reflecting structure is positioned on one side, far away from the substrate, of the second electrode.
Specifically, the oscillator comprises a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is arranged between the first electrode and the second electrode, the first electrode is arranged adjacent to the substrate, the second electrode is arranged far away from the substrate, and the through hole penetrates through the first electrode, the piezoelectric layer and the second electrode and is communicated with the cavity.
Optionally, the number of the elliptical holes is M, and M is a positive integer;
when M =1, the projection of the elliptical hole on the second electrode is located at the geometric center of the second electrode;
when M >1, the projections of M elliptical holes on the second electrode are distributed asymmetrically, wherein the projection of one elliptical hole on the second electrode is positioned at the geometric center of the second electrode, and the projections of the rest elliptical holes on the second electrode are positioned near the vertex angle of the second electrode and are distributed asymmetrically with each other;
the projections of the other elliptical holes on the second electrode are ellipses, and the long axes of the ellipses are not parallel to the edges of the second electrode.
Alternatively, the elliptical holes may be equal, unequal or partially equal in size.
Optionally, the piezoelectric material of the piezoelectric layer includes AlN and AlScN, and the first electrode and the second electrode may include Mo, al, pt, or the like.
Optionally, the reflection structure includes two frame structures with different thicknesses, and the two frame structures with different thicknesses are made of the same material and are arranged at intervals.
Optionally, the two frame structures with different thicknesses include a first frame structure and a second frame structure, a distance between the first frame structure and the geometric center of the second electrode is greater than a distance between the second frame structure and the geometric center of the second electrode, and a thickness of the first frame structure is greater than a thickness of the second frame structure.
In a second aspect, the present invention further provides a filter, including the thin film bulk acoustic resonator according to any of the embodiments of the first aspect.
The embodiment of the utility model provides a technical scheme not only can effectively restrain the formation of horizontal parasitic harmonic in the passband through adding a plurality of elliptical aperture at the oscillator, is favorable to the release of sacrificial layer in the cavity moreover, can further strengthen overall structure to the reflection of sound wave through placing reflective structure on the second electrode, reduces the energy and reveals, improves the quality factor Q value of syntonizer.
It should be understood that the statements herein are not intended to identify key or critical features of any embodiment of the present invention, nor are they intended to limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic top view of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 2 isbase:Sub>A schematic cross-sectional view of the film bulk acoustic resonator provided in FIG. 1 along section line A-A';
fig. 3 is an impedance spectrum of the present invention without a reflection structure;
FIG. 4 is an enlarged view of a portion of the impedance plot at X1 provided in FIG. 3 without the reflective structure;
fig. 5 is an impedance spectrum provided by the present invention with a reflective structure;
fig. 6 is a partial enlarged view at X2 of the impedance map provided in fig. 5 with the reflective structure.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
The embodiment of the utility model provides a film bulk acoustic resonator. Fig. 1 isbase:Sub>A schematic top view ofbase:Sub>A film bulk acoustic resonator according to an embodiment of the present invention, and fig. 2 isbase:Sub>A schematic cross-sectional view of the film bulk acoustic resonator provided in fig. 1 alongbase:Sub>A section linebase:Sub>A-base:Sub>A', referring to fig. 1 and fig. 2, where the film bulk acoustic resonator 100 includesbase:Sub>A substrate 10,base:Sub>A vibrator 20, andbase:Sub>A reflection structure 40. One side of the substrate 10 is provided with a cavity 101. The vibrator 20 is disposed on a side of the substrate 10 where the cavity 101 is disposed. The projection of the transducer 20 on the substrate 10 covers the projection of the cavity 101 on the substrate 10. The vibrator 20 is provided with a plurality of through holes 30 connected with the cavity 101 in a penetrating manner, the through holes 30 are elliptical holes, the cross section of each elliptical hole in the direction parallel to the plane of the substrate 10 is elliptical, and the extending direction of each elliptical hole is perpendicular to the plane of the substrate 10. The reflecting structure is positioned on one side of the second electrode far away from the substrate.
Specifically, the vibrator 20 includes a first electrode 201, a piezoelectric layer 202, and a second electrode 203. The piezoelectric layer 202 is disposed between the first electrode 201 and the second electrode 203. The first electrode 201 is disposed adjacent to the substrate 10. The second electrode 203 is disposed away from the substrate 10. The through hole 30 penetrates the first electrode 201, the piezoelectric layer 202, and the second electrode 203 and communicates with the cavity 101.
In the present embodiment, the film bulk acoustic resonator includes a substrate 10 provided with a cavity 101 and an oscillator 20 provided with a plurality of through holes 30, and the plurality of through holes 30 on the oscillator 20 are connected with the cavity 101 on the substrate 10, so that the generation of transverse parasitic harmonics in the pass band of the filter can be effectively suppressed.
Optionally, on the basis of the above technical solution, with reference to fig. 1, a projection of the cavity 101 on the plane where the substrate 10 is located is rectangular or square, and the vibrator 20 may be a rectangular vibrator or a square vibrator larger than an opening of the cavity 10. Wherein the area of the projection of the first electrode 201 on the substrate 10 is S1, the area of the piezoelectric layer 202 on the substrate 10 is S2, the area of the second electrode 203 on the substrate 10 is S3, and S1> S2> S3.
Optionally, on the basis of the above technical solution, the number of the elliptical holes is M, and M is a positive integer. When M =1, the projection of the elliptical hole on the second electrode 203 is located at the geometric center of the second electrode 203; when M >1, the projections of M elliptical holes on the second electrode 203 are asymmetrically distributed, wherein the projection of one elliptical hole on the second electrode 203 is located at the geometric center of the second electrode 203, the projections of the remaining elliptical holes on the second electrode 203 are located near the vertex angle of the second electrode 203 and are asymmetrically distributed with each other, the projections of the remaining elliptical holes on the second electrode 203 are ellipses, and the major axes of the ellipses are not parallel to the edge of the second electrode 203.
Referring to fig. 1, the number of the elliptical holes is five, and the elliptical holes are asymmetrically distributed on the projection of the second electrode. The projection of one elliptical hole on the second electrode 203 is located at the geometric center of the second electrode 203; the projections of the other four elliptical holes on the second electrode 203 are located near four top corners of the second electrode and are distributed asymmetrically with each other. The projections of the four elliptical holes on the second electrode 203 are ellipses, the major axes of the ellipses are not parallel to the edge of the second electrode 203, and the major axes of the projected ellipses corresponding to the elliptical holes whose projections are located at the geometric center of the second electrode 203 may not be parallel to the edge of the second electrode 203, or may be parallel to the edge of the second electrode 203.
It should be noted that the elliptical holes may be equal, unequal or partially equal in size. Referring to fig. 1, in this embodiment, all the elliptical holes are equal in size as an example, and a person skilled in the art may set the size of the elliptical holes, an included angle between a major axis of a projection ellipse of the elliptical holes on the second electrode and an edge of the cavity, and the number of the elliptical holes according to actual requirements.
Alternatively, on the basis of the above technical solution, the piezoelectric layer 202 may be made of AlN, alScN, or the like, and the first electrode 201 and the second electrode 203 may be made of Mo, al, pt, or the like.
Note that, the material for manufacturing the first electrode 201, the second electrode 203, and the piezoelectric layer 202 is not limited in the embodiments of the present invention.
Optionally, on the basis of the above technical solution, with reference to fig. 1, rounding all inner angles of the second electrode 203 and the cavity 101 in the oscillator 20, where the rounded corners 50 may be equal, unequal or partially equal, and fig. 1 illustrates that all inner angles are equal, and a person skilled in the art may set the size of the rounded corner 50 according to actual needs, and by rounding the inner angles, the generation of lateral resonance may be effectively suppressed.
Optionally, on the basis of the above technical solution, referring to fig. 1, the reflective structure 40 surrounds the periphery of the second electrode 203 to define a reflective cavity, and the reflective structure 40 is disposed on the side of the second electrode 203 away from the substrate 10, so that reflection of the whole structure to the transverse sound wave can be further enhanced, energy leakage is reduced, and a quality factor Q value of the resonator is improved.
With reference to fig. 1, the reflection structure 40 includes two frame structures with different thicknesses, and the two frame structures with different thicknesses are made of the same material and are arranged at intervals. If the same material is in different thickness places, the acoustic impedance is different, impedance mismatch can be formed at junctions with different thicknesses, and the transverse acoustic reflection structure can reflect transverse sound waves twice due to the fact that the thicknesses of two frame structures of the reflection structure 40 are different, so that leakage of transverse sound wave energy can be further restrained.
Specifically, referring to fig. 1 and 2, the reflective structure 40 includes a first frame structure 401 and a second frame structure 402, a distance d1 between the first frame structure 401 and a geometric center of the second electrode 203 is greater than a distance d2 between the second frame structure 402 and the geometric center of the second electrode 203, and a thickness h1 of the first frame structure 401 is greater than a thickness h2 of the second frame structure 402. In this embodiment, the projections of the first frame structure 401 and the second frame structure 402 on the plane of the substrate 10 are square rings, and in an alternative embodiment, all the inner corners of the square ring structures of the first frame structure 401 and the second frame structure 402, the second electrode 203 in the oscillator 20, and the cavity 101 have rounded structures, so as to further suppress the generation of lateral resonance.
Specifically, on the basis of the above embodiments, referring to fig. 3-6, fig. 3 is the impedance map when there is no reflection structure provided by the present invention, fig. 4 is a partial enlarged view of X1 in the impedance map when there is no reflection structure provided by fig. 3, fig. 5 is the impedance map when there is a reflection structure provided by the present invention, and fig. 6 is a partial enlarged view of X2 in the impedance map when there is a reflection structure provided by fig. 5. It can be seen that the impedance value (Rp value) 28800 of the resonator with the reflection structure at the parallel resonance position P1 is obviously greater than the impedance value (Rp value) 23960 of the resonator without the reflection structure at the parallel resonance position P2, where the impedance value (Rp value) at the parallel resonance position is the impedance value corresponding to the highest point in fig. 4 and 6, which indicates that the energy leakage of the resonator at the parallel resonance position is reduced, and the two-channel reflection frame structure plays a good role in suppressing the acoustic wave leakage and improving the Q value.
The embodiment of the utility model provides a film bulk acoustic resonator is including the substrate that is provided with the cavity, set up the oscillator of a plurality of through-hole and be located the second electrode and keep away from the reflection configuration of substrate one side. Through set up the through-hole of a plurality of intercommunication cavity on the oscillator, not only can effectively restrain the generation of horizontal parasitic clutter, be favorable to the release of sacrificial layer in the cavity moreover, handle through carrying out the radius angle to the second electrode of oscillator and all interior angles of cavity, can restrain FBAR's energy to a certain extent and reveal, set up reflection configuration through keeping away from substrate one side at the second electrode, can further strengthen overall structure and to the reflection of sound wave, reduce the energy and reveal.
Example two
On the basis of the above embodiments, the embodiment of the present invention provides a filter, including the film bulk acoustic resonator described in any of the above embodiments.
Referring to fig. 1-2, the film bulk acoustic resonator 100 includes a substrate 10, a vibrator 20, and a reflection structure 40. A cavity 101 is provided at one side of the substrate 10. The vibrator 20 is disposed on a side of the substrate 10 where the cavity 101 is disposed. The projection of the vibrator 20 on the substrate 10 covers the projection of the cavity 101 on the substrate 10. The vibrator 20 is provided with a plurality of through holes 30 connected with the cavity 101 in a penetrating manner, the through holes 30 are elliptical holes, the cross sections of the elliptical holes in the direction parallel to the plane of the substrate 10 are elliptical, and the extending direction of the elliptical holes is perpendicular to the plane of the substrate 10. The reflecting structure is positioned on one side of the second electrode far away from the substrate.
Specifically, the vibrator 20 includes a first electrode 201, a piezoelectric layer 202, and a second electrode 203. The piezoelectric layer 202 is disposed between the first electrode 201 and the second electrode 203. The first electrode 201 is disposed adjacent to the substrate 10. The second electrode 203 is disposed away from the substrate 10. The through hole 30 penetrates the first electrode 201, the piezoelectric layer 202, and the second electrode 203 and communicates with the cavity 101.
Optionally, the projection of the cavity 101 on the plane where the substrate 10 is located is rectangular or square, and the vibrator 20 may be a rectangular vibrator or a square vibrator larger than the opening of the cavity 10.
Optionally, the projections of the elliptical holes on the second electrode 203 are asymmetrically distributed.
Alternatively, the piezoelectric layer 202 may be made of AlN, alScN, or the like, and the first electrode 201 and the second electrode 203 may be made of Mo, al, pt, or the like.
Optionally, the second electrode 203 in the transducer 20 and all inner corners of the cavity 101 are rounded, and the rounded corners 50 may be equal, different, or partially equal. By rounding the inner corners, the transverse waves can be further suppressed from resonating, and the energy leakage of the FBAR can be suppressed.
Optionally, the reflection structure 40 includes two frame structures with different thicknesses, and the two frame structures with different thicknesses are made of the same material and are arranged at intervals.
Specifically, referring to fig. 1 and 2, the reflective structure 40 includes a first frame structure 401 and a second frame structure 402, a distance d1 between the first frame structure 401 and a geometric center of the second electrode 203 is greater than a distance d2 between the second frame structure 402 and a geometric center of the second electrode 203, and a thickness h1 of the first frame structure 401 is greater than a thickness h2 of the second frame structure 402.
The embodiment of the utility model provides a wave filter includes arbitrary in the above-mentioned embodiment film bulk acoustic resonator, film bulk acoustic resonator is including the substrate that is provided with the cavity, set up the oscillator of a plurality of through-hole and be located the reflection configuration that substrate one side was kept away from to the second electrode. Through set up the through-hole of a plurality of intercommunication cavity on the oscillator, not only can effectively restrain the generation of horizontal parasitic clutter, be favorable to the release of sacrificial layer in the cavity moreover, handle through carrying out the radius angle to the second electrode of oscillator and all interior angles of cavity, can restrain FBAR's energy to a certain extent and reveal, set up reflection configuration through keeping away from substrate one side at the second electrode, can further strengthen overall structure and to the reflection of sound wave, reduce the energy and reveal.
Note that, the above-mentioned embodiments do not limit the scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A thin film bulk acoustic resonator, comprising:
the device comprises a substrate, a first electrode and a second electrode, wherein one side of the substrate is provided with a cavity;
the oscillator is arranged on one side of the substrate, which is provided with a cavity, the projection of the oscillator on the substrate covers the projection of the cavity on the substrate, and the oscillator is provided with a plurality of through holes connected with the cavity in a penetrating manner;
the vibrator comprises a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is arranged between the first electrode and the second electrode, the first electrode is arranged close to the substrate, and the second electrode is arranged far away from the substrate;
the through hole is an elliptical hole, the cross section of the elliptical hole along the direction parallel to the plane of the substrate is elliptical, and the extending direction of the elliptical hole is perpendicular to the plane of the substrate;
the reflecting structure is positioned on one side, far away from the substrate, of the second electrode.
2. The film bulk acoustic resonator of claim 1, wherein:
the number of the elliptical holes is M, and M is a positive integer;
when M =1, the projection of the elliptical hole on the second electrode is located at the geometric center of the second electrode;
when M >1, the projections of M elliptical holes on the second electrode are distributed asymmetrically, wherein the projection of one elliptical hole on the second electrode is positioned at the geometric center of the second electrode, and the projections of the rest elliptical holes on the second electrode are positioned near the vertex angle of the second electrode and are distributed asymmetrically with each other;
the projections of the other elliptical holes on the second electrode are ellipses, and the long axes of the ellipses are not parallel to the edges of the second electrode.
3. The film bulk acoustic resonator of claim 1, wherein the elliptical holes are equal, unequal or partially equal in size.
4. The film bulk acoustic resonator according to claim 1, wherein the reflection structure comprises two frame structures with different thicknesses, and the two frame structures with different thicknesses are made of the same material and are arranged at intervals.
5. The film bulk acoustic resonator according to claim 4, wherein the two different frame structures comprise a first frame structure and a second frame structure, the first frame structure is located at a greater distance from the geometric center of the second electrode than the second frame structure is located at, and the thickness of the first frame structure is greater than the thickness of the second frame structure.
6. A filter comprising the thin film bulk acoustic resonator of any one of claims 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222334481.2U CN218335976U (en) | 2022-08-31 | 2022-08-31 | Film bulk acoustic resonator and filter |
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| CN202222334481.2U CN218335976U (en) | 2022-08-31 | 2022-08-31 | Film bulk acoustic resonator and filter |
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| CN218335976U true CN218335976U (en) | 2023-01-17 |
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| CN202222334481.2U Active CN218335976U (en) | 2022-08-31 | 2022-08-31 | Film bulk acoustic resonator and filter |
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