CN217904382U - Resonator and filter - Google Patents
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- CN217904382U CN217904382U CN202222211598.1U CN202222211598U CN217904382U CN 217904382 U CN217904382 U CN 217904382U CN 202222211598 U CN202222211598 U CN 202222211598U CN 217904382 U CN217904382 U CN 217904382U
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 abstract description 22
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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Abstract
A resonator and a filter relate to the technical field of semiconductors. This resonator includes the substrate layer and stacks gradually bottom electrode layer, piezoelectric layer and the top electrode layer of setting on the substrate layer, has first cavity between substrate layer and the bottom electrode layer, first cavity and air intercommunication, and top electrode layer and the orthographic projection of first cavity on the substrate layer at least partially coincide, still are equipped with the loop configuration on the piezoelectric layer, and the loop configuration encircles the top electrode layer setting, and the loop configuration encloses jointly with the piezoelectric layer and closes formation second cavity. The resonator is characterized in that an annular structure is arranged on the outer side of a top electrode layer, the annular structure and a piezoelectric layer are enclosed to form a second cavity, and a structure with high-sound-impedance materials and low-sound-impedance materials alternating is formed on the outer side of an effective resonance area of the resonator by utilizing the difference of acoustic impedance between materials of the annular structure and air in the second cavity so as to limit transverse leakage of sound waves and have a high quality factor.
Description
Technical Field
The utility model relates to the field of semiconductor technology, particularly, relate to a syntonizer and wave filter.
Background
With the rapid development of wireless communication, wireless signals become more and more crowded, and new requirements of integration, miniaturization, low power consumption, high performance, low cost and the like are provided for a filter working in a radio frequency band. The traditional surface acoustic wave resonator cannot reach the technical index due to the limitations of frequency, bearing power and the like. Film Bulk Acoustic Resonators (FBARs) are becoming the focus of research in radio frequency filters due to their CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capability.
The sound wave of the film bulk acoustic resonator is divided into a vibration mode and a transverse vibration mode along the thickness direction, wherein only the sound wave of the vibration mode along the thickness direction meeting the total reflection condition of the sound wave is reserved, and the sound wave of the transverse vibration mode is consumed. The sound wave in the transverse vibration mode causes the loss of sound wave energy, reduces the energy conversion efficiency, increases the insertion loss of the FBAR, and reduces the Q value of the quality factor.
In the prior art, structures such as an air bridge, a boundary ring, a phononic crystal and the like are generally adopted to improve the quality factor of the device. But the air bridge and the boundary ring have complex preparation processes and higher requirements on precision; the phononic crystal structure is located below the device active area, and has a limited effect of reducing the lateral leakage of the acoustic wave energy.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a syntonizer and wave filter, its preparation simple process, and can effectively reduce the horizontal leakage of sound wave energy.
The embodiment of the utility model is realized like this:
the embodiment of the utility model provides a resonator, including the substrate layer with range upon range of bottom electrode layer, piezoelectric layer and the top electrode layer of setting on the substrate layer in proper order, first cavity has between substrate layer and the bottom electrode layer, first cavity and air intercommunication, top electrode layer and the orthographic projection of first cavity on the substrate layer at least partial coincidence, still are equipped with the loop configuration on the piezoelectric layer, and the loop configuration encircles the top electrode layer setting, and the loop configuration encloses jointly with the piezoelectric layer and closes formation second cavity.
Alternatively, the ring structure includes an inclined portion having one edge connected to the piezoelectric layer and the other edge connected to an edge of the connecting portion, the connecting portion being separated from the piezoelectric layer, a connecting portion having one edge connected to the connecting portion and the other edge connected to the piezoelectric layer, and a reflecting portion having one edge connected to the connecting portion and the other edge connected to the piezoelectric layer.
Optionally, the reflection portion includes at least two, at least two reflection portions are concentrically and spaced apart from each other, and two adjacent reflection portions, the connection portion, and the piezoelectric layer enclose together to form a third cavity.
Optionally, the longitudinal section of the ring-shaped structure is comb-shaped.
Optionally, an edge of the inclined portion connected to the piezoelectric layer is also connected to an edge of the top electrode layer.
Optionally, the number of the reflection parts is 2 to 5.
Optionally, a longitudinal cross-sectional area of the reflection portion is 0.5 to 2 times a longitudinal cross-sectional area of the second cavity, and a longitudinal cross-sectional area of the reflection portion is 0.5 to 2 times a longitudinal cross-sectional area of the third cavity.
Optionally, the height of the ring structure is 1 to 3 times the height of the top electrode layer.
Alternatively, the width of the ring structure is 2 to 100 μm.
The embodiment of the utility model provides a still provide a wave filter, include as above arbitrary one.
The utility model discloses beneficial effect includes:
the utility model provides a resonator, includes the substrate layer and stacks gradually bottom electrode layer, piezoelectric layer and the top electrode layer of setting on the substrate layer, has first cavity between substrate layer and the bottom electrode layer, first cavity and air intercommunication, top electrode layer and the orthographic projection of first cavity on the substrate layer at least partly coincide, still are equipped with the loop configuration on the piezoelectric layer, and the loop configuration encircles the setting of top electrode layer, and the loop configuration closes with the piezoelectric layer encloses jointly and forms the second cavity. According to the resonator, the annular structure is arranged on the outer side of the top electrode layer, the annular structure and the piezoelectric layer are enclosed to form the second cavity, and the structure with the high acoustic impedance material and the low acoustic impedance material alternating is formed on the outer side of the effective resonance area of the resonator by utilizing the difference of acoustic impedance between the material of the annular structure and air in the second cavity, so that transverse leakage of sound waves is limited, and the resonator has a high quality factor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a resonator at a first viewing angle according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a resonator at a second viewing angle according to an embodiment of the present invention;
fig. 3 is a second schematic structural diagram of a resonator according to an embodiment of the present invention at a first view angle.
Icon: 100-a resonator; 110-a substrate layer; 120-a bottom electrode layer; 130-a piezoelectric layer; 140-a top electrode layer; 150-cyclic structure; 151-an inclined portion; 152-a connecting portion; 153-a reflective portion; 160-a first cavity; 170-a second cavity; 180-a third cavity; 190-effective resonance area.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, or the directions or positional relationships usually placed when the products of the present invention are used, and are only for the convenience of describing the present invention and simplifying the description, but not for indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1 and fig. 2 in combination, an embodiment of the present application provides a resonator 100, which includes a substrate layer 110, and a bottom electrode layer 120, a piezoelectric layer 130, and a top electrode layer 140 sequentially stacked on the substrate layer 110, a first cavity 160 is provided between the substrate layer 110 and the bottom electrode layer 120, the first cavity 160 is communicated with air, orthographic projections of the top electrode layer 140 and the first cavity 160 on the substrate layer 110 are at least partially overlapped, a ring structure 150 is further provided on the piezoelectric layer 130, the ring structure 150 is disposed around the top electrode layer 140 and connected to an edge of the top electrode layer 140, and the ring structure 150 and the piezoelectric layer 130 jointly enclose to form a second cavity 170.
The resonator 100 includes a substrate layer 110, and a bottom electrode layer 120, a piezoelectric layer 130, and a top electrode layer 140 sequentially disposed in a vertical direction (a direction in fig. 1) on a surface of the substrate layer 110. Specifically, a first cavity 160 for accommodating air is formed between the bottom electrode layer 120 and the substrate layer 110, the top electrode layer 140 and the first cavity 160 partially or completely overlap in the vertical direction, the overlapping portions of the orthographic projection (projection in the vertical direction) of the top electrode layer 140, the piezoelectric layer 130 and the bottom electrode layer 120 in the first cavity 160 jointly form an effective resonance area 190 of the resonator 100, and an acoustic wave is formed in the effective resonance area 190 and oscillates in the effective resonance area 190.
The acoustic wave formed in the effective resonance area 190 is divided into a longitudinal acoustic wave propagating in the vertical direction and a transverse acoustic wave propagating in the horizontal direction, in order to suppress leakage of the transverse acoustic wave, the piezoelectric layer 130 is further provided with a ring structure 150, the ring structure 150 is disposed around the top electrode layer 140 in the horizontal direction, meanwhile, the ring structure 150 is further connected with the piezoelectric layer 130 and encloses to form a second cavity 170, and air is stored in the second cavity 170. Since the acoustic impedance of the material of the ring structure 150 is different from the acoustic impedance of the air in the second cavity 170, the high acoustic impedance material and the low acoustic impedance material are alternately distributed at the ring structure 150, which can limit the transmission of the acoustic wave. The ring structure 150 is disposed outside the effective resonance region 190 of the resonator 100, i.e., the lateral leakage of the acoustic wave is limited.
First, in the present embodiment, the manner and the position of the first cavity 160 communicating with the air are not limited as long as the air can be ensured in the first cavity 160. Illustratively, the resonator 100 is provided with a through hole (not shown) communicating with the first cavity 160, and external air enters the first cavity 160 through the through hole.
Second, in the present embodiment, the structures of the top electrode layer 140 and the bottom electrode layer 120 are not limited as long as they can cooperate with the piezoelectric layer 130 to form an acoustic wave. Illustratively, the top electrode layer 140 and the bottom electrode layer 120 are flat electrodes (i.e., shown as flat electrodes in fig. 1).
Third, in the present embodiment, the ring structure 150 is not limited as long as it can form the second cavity 170 by enclosing with the piezoelectric layer 130, and form a structure in which high acoustic impedance material and low acoustic impedance material are alternately distributed outside the top electrode layer 140 to limit lateral leakage of the acoustic wave. Referring to fig. 1 and 3, the ring structure 150 may be directly connected to the top electrode layer 140 (the embodiment shown in fig. 1) or may not be connected to the top electrode layer 140 (the embodiment shown in fig. 3).
In summary, in the resonator 100, the ring structure 150 is disposed outside the top electrode layer 140, the ring structure 150 and the piezoelectric layer 130 surround to form the second cavity 170, and a structure in which high acoustic impedance materials and low acoustic impedance materials are alternated is formed outside the effective resonance area 190 of the resonator 100 by using the difference in acoustic impedance between the material of the ring structure 150 and the air in the second cavity 170, so as to limit the lateral leakage of the acoustic wave, and have a high quality factor.
Optionally, in an achievable manner of the embodiment of the present invention, the ring structure 150 includes an inclined portion 151, a connection portion 152, and a reflection portion 153, one edge of the inclined portion 151 is connected to the piezoelectric layer 130, and the other edge is connected to an edge of the connection portion 152, the connection portion 152 is separated from the piezoelectric layer 130, and one edge of the reflection portion 153 is connected to the connection portion 152, and the other edge is connected to the piezoelectric layer 130.
The inclined portion 151, the connection portion 152, and the reflection portion 153 are annular. An included angle is formed between the inclined portion 151 and the piezoelectric layer 130, the included angle is larger than 0 degree and smaller than 90 degrees, and preferably, the included angle is between 30 degrees and 60 degrees; the inclined portion 151 has opposite two edges, one of which is connected to the piezoelectric layer 130 and the other of which is connected to an edge of the connection portion 152. The connecting portion 152 is located above the piezoelectric layer 130 and spaced apart from the piezoelectric layer 130, and the connecting portion 152 also has two opposite edges, one of which is connected to the inclined portion 151 and the other of which is separated from the piezoelectric layer 130. The reflection part 153 is located between the connection part 152 and the piezoelectric layer 130, and two opposite edges of the reflection part 153 are connected to the connection part 152 and the piezoelectric layer 130, respectively. In this way, the second cavity 170 may be formed between the inclined portion 151, the connection portion 152, the reflection portion 153, and the piezoelectric layer 130.
Optionally, in an achievable manner of the embodiment of the present invention, an edge of the inclined portion 151 connected to the piezoelectric layer 130 is further connected to an edge of the top electrode layer 140. By the arrangement, the annular structure 150 can be prepared while the top electrode layer 140 is prepared, so that the process steps are simplified, and meanwhile, the effect of inhibiting the lateral leakage of sound waves is better.
Optionally, in an achievable manner of the embodiment of the present invention, the reflection portions 153 include at least two reflection portions 153, at least two reflection portions 153 are concentrically arranged at an interval, and two adjacent reflection portions 153, the connection portion 152 and the piezoelectric layer 130 jointly enclose to form the third cavity 180.
The number of the reflection parts 153 may be two, three, or more (an embodiment in which the reflection parts 153 include four is illustrated in fig. 1), at least two reflection parts 153 are concentrically arranged in the horizontal direction, and a gap is provided between adjacent two reflection parts 153. The upper edges of the at least two reflecting portions 153 are simultaneously connected to the connecting portion 152, and the lower edges are simultaneously connected to the piezoelectric layer 130; the reflection part 153 closest to the top electrode layer 140 forms a second cavity 170 together with the inclined part 151, the connection part 152 and the piezoelectric layer 130; the connecting portion 152 and the piezoelectric layer 130 seal up and down the gap between two adjacent reflecting portions 153, thereby forming a third cavity 180. It should be understood that the second cavity 170 and the third cavity 180 are also annular, with the third cavity 180 being disposed around the second cavity 170. The number of the third cavities 180 is one less than that of the reflection parts 153.
Increasing the number of the reflectors 153 increases the number of times of alternation between the high acoustic impedance material and the low acoustic impedance material, thereby improving the effect of suppressing the lateral leakage of acoustic energy, and making the resonator 100 have a high quality factor.
Optionally, in an achievable mode of the embodiment of the present invention, a longitudinal section (a section along the vertical direction) of the annular structure is in a shape of a comb, and a plurality of comb teeth of the annular structure are connected to the piezoelectric layer to form the second cavity 170 and the third cavity 180. The longitudinal section is in a comb-tooth-shaped annular structure, so that the effect of inhibiting the transverse leakage of the sound wave energy is better.
Optionally, in an implementation manner of the embodiment of the present invention, the number of the reflection portions 153 is 2 to 5.
The number of the reflection portions 153 is 2 to 5, including 2 and 5. When the number of the reflection portions 153 is 1, only the second cavity 170 can be formed, and the third cavity 180 cannot be formed, and the number of times of alternation of the high-impedance material and the low-impedance material is too small, so that the effect of suppressing the lateral leakage of the acoustic wave energy is limited; when the number of the reflection portions 153 is 2 to 5, the formed ring structure 150 has a good effect of suppressing lateral leakage of acoustic wave energy, and does not have an excessive influence on the size of the resonator 100 in the horizontal direction; when the number of the reflection portions 153 exceeds 5, the effect of suppressing the lateral leakage of the acoustic wave energy is not significantly improved, and the width of the ring structure 150 in the horizontal direction is excessively increased, thereby significantly increasing the volume of the resonator 100.
Optionally, in an implementation manner of the embodiment of the present invention, a longitudinal sectional area of the reflection portion 153 is 0.5 to 2 times a longitudinal sectional area of the second cavity 170, and a longitudinal sectional area of the reflection portion 153 is 0.5 to 2 times a longitudinal sectional area of the third cavity 180.
It is to be understood that the longitudinal sectional area is an area of a section in the vertical direction, and 0.5 to 2 times includes 0.5 times and 2 times. When the ratio of the longitudinal cross-sectional area of the reflecting portion 153 to the longitudinal cross-sectional area of the second cavity 170 is between 0.5 and 2 (including the end points), an appropriate distance is maintained between the reflecting portion 153 and the inclined portion 151, and the suppression effect on the sound wave is not affected by too close or too far distance; similarly, when the ratio of the longitudinal cross-sectional area of the reflecting portion 153 to the longitudinal cross-sectional area of the third cavity 180 is between 0.5 and 2 (inclusive), an appropriate distance is maintained between two adjacent reflecting portions 153, and the sound wave suppression effect is not affected by too close or too far distance.
Optionally, in an implementation manner of the embodiment of the present invention, the height of the ring structure 150 is 1 to 3 times of the height of the top electrode layer 140.
The height (dimension in the vertical direction) of the ring structure 150 is 1 to 3 times, including 1 and 3 times, the height of the top electrode layer 140. When the ratio of the height of the ring structure 150 to the height of the top electrode layer 140 is less than 1, the ring structure 150 is lower than the top electrode layer 140, which cannot effectively suppress the lateral leakage of the acoustic wave energy; when the height of the ring-shaped structure 150 is 1 to 3 times of the height of the top electrode layer 140, the ring-shaped structure can completely surround the top electrode layer 140 in the vertical direction, so that the lateral leakage of the acoustic wave energy can be effectively prevented, and the size of the resonator 100 in the vertical direction is not excessively increased; when the ratio of the height of the ring structure 150 to the height of the top electrode layer 140 is greater than 3, the effect of suppressing the lateral leakage of the acoustic wave energy is not significantly improved, and the height of the resonator 100 in the vertical direction is also significantly increased, thereby significantly increasing the volume of the resonator 100.
Optionally, in an implementation manner of the embodiment of the present invention, the width of the ring structure 150 is 2 to 100 μm.
The width (dimension in the horizontal direction) of the ring-shaped structure 150 is 2 to 100 μm, including 2 μm and 100 μm; when the width of the ring-shaped structure 150 is less than 2 μm, the number of the reflective portions 153 that can be disposed is small, and the longitudinal cross-sectional areas of the reflective portions 153, the second cavity 170, or the third cavity 180 are all small, so that the effect of suppressing the lateral leakage of the acoustic wave energy is limited; when the width of the ring-shaped structure 150 is 2 to 100 μm, more reflection parts 153 can be provided, and the longitudinal sectional areas of the reflection parts 153, the second cavity 170 and the third cavity 180 are made larger, so as to improve the effect of inhibiting the lateral leakage of the sound wave; when the width of the ring structure 150 is greater than 100 μm, the effect of suppressing the lateral leakage of the acoustic wave energy is not significantly improved, and the volume of the resonator 100 is also significantly increased.
Optionally, in an achievable manner according to an embodiment of the present invention, the material of the ring structure 150 is any one of molybdenum, aluminum, platinum, gold, nickel, copper, silver, and chromium.
Preferably, the material of the ring structure 150 is the same as the material of the top electrode layer 140, so that the ring structure 150 is prepared while the top electrode layer 140 is prepared, the process is simplified, and the connection reliability between the ring structure 150 and the top electrode layer 140 can be further improved. Of course, in other embodiments, the material of the ring structure 150 may be different from the top electrode layer 140 as long as it can suppress lateral leakage of acoustic wave energy.
The present embodiment also provides a filter comprising a resonator 100 as described in any of the above.
The filter includes the same structure and advantageous effects as the resonator 100 in the foregoing embodiment. The structure and advantageous effects of the resonator 100 have been described in detail in the foregoing embodiments, and are not described in detail herein.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The utility model provides a resonator, its characterized in that includes the substrate layer and stacks gradually the setting bottom electrode layer, piezoelectric layer and top electrode layer on the substrate layer, the substrate layer with first cavity has between the bottom electrode layer, first cavity and air intercommunication, the top electrode layer with first cavity is in orthographic projection on the substrate layer is at least partly coincidence, still be equipped with the loop configuration on the piezoelectric layer, the loop configuration encircles the top electrode layer sets up, the loop configuration with the piezoelectric layer encloses jointly and closes and form the second cavity.
2. The resonator according to claim 1, wherein the ring-shaped structure comprises an inclined portion having one edge connected to the piezoelectric layer and the other edge connected to an edge of a connecting portion separated from the piezoelectric layer, a connecting portion having one edge connected to the connecting portion and the other edge connected to the piezoelectric layer, and a reflecting portion having one edge connected to the piezoelectric layer and the other edge connected to the piezoelectric layer.
3. The resonator according to claim 2, wherein the reflection portion comprises at least two reflection portions, at least two reflection portions are concentrically and separately arranged, and two adjacent reflection portions, the connection portion and the piezoelectric layer jointly enclose a third cavity.
4. The resonator according to claim 3, characterized in that the longitudinal section of the ring-like structure is comb-shaped.
5. The resonator of claim 2, wherein an edge of the angled portion connected to the piezoelectric layer is also connected to an edge of the top electrode layer.
6. The resonator according to claim 3, wherein the number of the reflection portions is 2 to 5.
7. The resonator according to claim 3, wherein a longitudinal sectional area of the reflection portion is 0.5 to 2 times a longitudinal sectional area of the second cavity, and a longitudinal sectional area of the reflection portion is 0.5 to 2 times a longitudinal sectional area of the third cavity.
8. The resonator of claim 1, wherein the height of the ring structure is 1-3 times the height of the top electrode layer.
9. The resonator according to claim 1, wherein the width of the ring structure is 2-100 μm.
10. A filter comprising a resonator as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222211598.1U CN217904382U (en) | 2022-08-19 | 2022-08-19 | Resonator and filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222211598.1U CN217904382U (en) | 2022-08-19 | 2022-08-19 | Resonator and filter |
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| CN217904382U true CN217904382U (en) | 2022-11-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116318018A (en) * | 2023-02-24 | 2023-06-23 | 苏州敏声新技术有限公司 | Bulk acoustic wave resonator and method for manufacturing the same |
| CN116979925A (en) * | 2023-08-10 | 2023-10-31 | 浙江星曜半导体有限公司 | Film bulk acoustic resonator, preparation method thereof and filter |
-
2022
- 2022-08-19 CN CN202222211598.1U patent/CN217904382U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116318018A (en) * | 2023-02-24 | 2023-06-23 | 苏州敏声新技术有限公司 | Bulk acoustic wave resonator and method for manufacturing the same |
| CN116979925A (en) * | 2023-08-10 | 2023-10-31 | 浙江星曜半导体有限公司 | Film bulk acoustic resonator, preparation method thereof and filter |
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