CN115694402A - Bulk acoustic wave resonator and method of manufacturing the same - Google Patents

Bulk acoustic wave resonator and method of manufacturing the same Download PDF

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Publication number
CN115694402A
CN115694402A CN202211260246.3A CN202211260246A CN115694402A CN 115694402 A CN115694402 A CN 115694402A CN 202211260246 A CN202211260246 A CN 202211260246A CN 115694402 A CN115694402 A CN 115694402A
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frame structure
shape
projecting portion
acoustic wave
subframe structure
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张大鹏
林瑞钦
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Wuhan Guangju Microelectronics Co ltd
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Wuhan Guangju Microelectronics Co ltd
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Abstract

The embodiment of the disclosure discloses a bulk acoustic wave resonator and a manufacturing method thereof, wherein the bulk acoustic wave resonator comprises: a substrate; a reflective structure, a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially stacked on a substrate; a frame structure on the second electrode layer and near an edge of the active region, comprising: a first sub-frame structure and a second sub-frame structure; wherein at least one of the inside and outside contours of the first subframe structure includes a first projecting portion and at least one of the inside and outside contours of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.

Description

Bulk acoustic wave resonator and method of manufacturing the same
Technical Field
The embodiment of the disclosure relates to the field of resonators, in particular to a bulk acoustic wave resonator and a manufacturing method thereof.
Background
With the development of mobile communication technology, the rf devices tend to be smaller. Bulk acoustic wave resonators have advantages of small size, high Q factor (Q factor, Q value), and the like, and are widely used in mobile communication technologies, such as filters or duplexers in mobile terminals.
In a mobile terminal, there is a case where a plurality of frequency bands are used simultaneously, which requires a steeper skirt and a smaller insertion loss of a filter or a duplexer. The performance of the filter or the duplexer is influenced by the bulk acoustic wave resonator, and the steeper skirt and smaller insertion loss can be realized by increasing the Q value of the bulk acoustic wave resonator. Therefore, how to increase the Q value of the bulk acoustic wave resonator is an urgent problem to be solved.
Disclosure of Invention
According to a first aspect of embodiments of the present disclosure, there is provided a bulk acoustic wave resonator comprising:
a substrate;
the reflecting structure, the first electrode layer, the piezoelectric layer and the second electrode layer are sequentially stacked on the substrate;
a frame structure on the second electrode layer and near an edge of the active region, comprising: a first sub-frame structure and a second sub-frame structure; wherein at least one of the inside and outside contours of the first subframe structure includes a first projecting portion and at least one of the inside and outside contours of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.
In some embodiments, the shape of the first sub-frame structure comprises a curved portion and the shape of the second sub-frame structure comprises at least two straight portions; the curved portion and the at least two straight portions are connected to form a shape of the frame structure.
In some embodiments, the frame structure is symmetrical in shape about an axis, the first sub-frame structure being located on one side of the axis of symmetry and the second sub-frame structure being located on the other side of the axis of symmetry.
In some embodiments, the shape of the first projecting portion comprises an n-sided polygon or an arc, n being a positive integer greater than or equal to 3; the shape of the second protruding part comprises an m-edge shape or an arc shape, and m is a positive integer greater than or equal to 3.
In some embodiments, the inner profile of the first subframe structure comprises the first projecting portion; wherein a projecting direction of a first projecting portion of an inside contour of the first subframe structure is directed from an edge of the active region to a middle of the active region;
the outer profile of the first sub-frame structure comprises the first projecting portion; wherein a projecting direction of the first projecting portion of the outer profile of the first subframe structure is directed from a middle of the active region to an edge of the active region.
In some embodiments, the inner profile of the second subframe structure comprises the second projecting portion; wherein a projecting direction of a second projecting portion of the inner profile of the second subframe structure is directed from an edge of the active region to a middle of the active region;
the outer profile of the second subframe structure comprises the second projecting portion; wherein a projecting direction of the second projecting portion of the outer profile of the second subframe structure is directed from a middle of the active region to an edge of the active region.
In some embodiments, the direction of projection of the first projecting portion is the same as or opposite to the direction of projection of the second projecting portion.
In some embodiments, the first protruding portions are arranged periodically, the number of periods being 3 or more;
the second protruding parts are arranged periodically, and the periodicity is more than or equal to 3.
In some embodiments, two adjacent first protruding portions are spaced apart from each other;
two adjacent second protruding parts are arranged at intervals.
In some embodiments, a pitch between adjacent two of the first projecting portions is greater than 1 micrometer;
the distance between two adjacent second protruding parts is larger than 1 micron.
In some embodiments, the inside contour of the frame structure comprises the first projecting portion, the shape of the first projecting portion comprising an n-sided polygon, n being a positive integer greater than or equal to 3;
the outer profile of the frame structure comprises the second protruding portion, the shape of the second protruding portion comprises an m-sided polygon, m is a positive integer greater than or equal to 3, and m and n are different.
In some embodiments, the shape of the inside contour of the first subframe structure and the shape of the outside contour of the first subframe structure are the same, and at least a portion of the shape of the outside contour of the second subframe structure is different from the shape of the inside contour of the second subframe structure.
In some embodiments, the shape of the inside contour of the second subframe structure and the shape of the outside contour of the second subframe structure are the same, and at least a portion of the shape of the outside contour of the first subframe structure is different from the shape of the inside contour of the first subframe structure.
In some embodiments, the medial and lateral profiles of the second subframe structure comprise the second projecting portion;
the inner profile of the first subframe structure includes the first projecting portions, the outer profile of the first subframe structure includes the second projecting portions, and the number of sides of the second projecting portions is greater than the number of sides of the first projecting portions.
In some embodiments, the first subframe structure has an inside contour and an outside contour that are the same shape;
the shape of the inside and outside contours of the second subframe structure is the same and different from the shape of the inside and outside contours of the first subframe structure.
According to a second aspect of the embodiments of the present disclosure, there is provided a method for manufacturing a bulk acoustic wave resonator, including:
providing a substrate;
forming a reflecting structure, a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially stacked on the substrate;
forming a frame structure on the second electrode layer; wherein the frame structure is near the edge of the active region; the frame structure comprises a first sub-frame structure and a second sub-frame structure; at least one of the inside and outside contours of the first subframe structure includes a first projecting portion and at least one of the inside and outside contours of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.
In the presently disclosed embodiment, by providing a frame structure at an edge near an active region, the frame structure including a first sub-frame structure and a second sub-frame structure, and at least one of an inside contour and an outside contour of the first sub-frame structure including a first protruding portion, and at least one of an inside contour and an outside contour of the second sub-frame structure including a second protruding portion different from the first protruding portion, an irregular frame structure may be formed, the irregular frame structure may not only suppress a transverse shear wave, prevent the transverse shear wave from propagating from the active region to an external region, so that energy is concentrated within the active region, reduce energy leakage, but also cause additional out-of-band spurious resonance (i.e., spurious noise) as compared to adding a conventional frame structure in a bulk acoustic wave resonator, the presently disclosed embodiment may effectively reduce spurious noise and unnecessary high-order modes by providing the irregular frame structure in the bulk acoustic wave resonator, so that a smith chart of the bulk acoustic wave resonator provided with the irregular frame structure is slightly larger than a smith chart of the bulk acoustic wave resonator provided with the conventional frame structure, which is advantageous for improving a Q value of the bulk acoustic wave resonator.
Drawings
FIG. 1a is a partial schematic view of a bulk acoustic wave resonator shown in accordance with an exemplary embodiment;
FIG. 1b is a graph illustrating scattering parameters of a bulk acoustic wave resonator, according to an exemplary embodiment;
figure 2 is a cross-sectional view of a bulk acoustic wave resonator shown in accordance with an embodiment of the present disclosure;
FIG. 3a is a top view of a frame structure shown in accordance with an embodiment of the present disclosure;
FIG. 3b is a top view of another frame structure shown in accordance with an embodiment of the present disclosure;
FIG. 3c is a top view of yet another frame structure shown in accordance with an embodiment of the present disclosure;
FIG. 4 is a schematic view of the shape of a first projection and a second projection shown in accordance with an embodiment of the present disclosure;
figure 5 is a scattering parameter plot for a bulk acoustic wave resonator shown in accordance with an embodiment of the present disclosure;
FIG. 6 is a top view of another frame structure shown in accordance with an embodiment of the present disclosure;
fig. 7 is a flow chart illustrating a method of fabricating a bulk acoustic wave resonator according to an embodiment of the present disclosure.
Detailed Description
The technical solutions of the present disclosure will be further explained in detail with reference to the drawings and examples. While exemplary implementations of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The present disclosure is more particularly described in the following paragraphs with reference to the accompanying drawings by way of example. Advantages and features of the present disclosure will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present disclosure.
It is to be understood that the meaning of "on … …", "above … …" and "above … …" of the present disclosure should be read in the broadest manner such that "on … …" not only means that it is "on" something without intervening features or layers therebetween (i.e., directly on something), but also includes the meaning of "on" something with intervening features or layers therebetween.
In the embodiments of the present disclosure, the terms "first," "second," "third," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
In embodiments of the present disclosure, the term "layer" refers to a portion of material that includes a region having a thickness. A layer may extend over the entirety of the underlying or overlying structure or may have an extent that is less than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure having a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of the continuous structure, or a layer may be between any horizontal pair at the top and bottom surfaces of the continuous structure. The layers may extend horizontally, vertically and/or along inclined surfaces. The layer may comprise a plurality of sub-layers.
The technical means described in the embodiments of the present disclosure may be arbitrarily combined without conflict.
Figure 1a is a partial schematic view of a bulk acoustic wave resonator shown in accordance with an exemplary embodiment. Referring to fig. 1a, when electric energy is applied to upper and lower electrodes of a bulk acoustic wave resonator, a piezoelectric layer located in the upper and lower electrodes generates an acoustic wave due to a piezoelectric effect. In addition to longitudinal waves as shown in fig. 1a, transverse shear waves (which may also be referred to as lateral waves) as shown in fig. 1a are generated within the piezoelectric layer. The transverse shear wave causes a loss of energy and deteriorates the Q value of the bulk acoustic wave resonator.
In order to eliminate the energy loss caused by the transverse shear wave, a ring frame (frame) structure can be formed on the upper electrode along the edge of the active region to restrain the transverse shear wave in the resonator, reduce the acoustic loss and improve the Q value, but the effective electromechanical coupling coefficient (Kt) of the resonator 2 ) It is deteriorated and produces spurious noise as shown in fig. 1 b.
In view of this, the embodiments of the present disclosure provide a bulk acoustic wave resonator and a method for manufacturing the same.
Fig. 2 is a cross-sectional view of a bulk acoustic wave resonator 100 shown in accordance with an embodiment of the present disclosure. Referring to fig. 2, the bulk acoustic wave resonator 100 includes: a substrate 101; a reflective structure 102, a first electrode layer 103, a piezoelectric layer 104, and a second electrode layer 105 sequentially stacked on a substrate 101; the frame structure 106 is located on the second electrode layer 105 and near the edge of the active region 100 a.
The constituent materials of the substrate 101 include elemental semiconductor materials (e.g., silicon, germanium), group iii-v compound semiconductor materials, group ii-vi compound semiconductor materials, organic semiconductor materials, or other semiconductor materials known in the art.
The first electrode layer 103 may be referred to as a lower electrode or a bottom electrode, the second electrode layer 105 may be referred to as an upper electrode or a top electrode, and electric energy may be applied to the bulk acoustic wave resonator through the first electrode layer 103 and the second electrode layer 105. The constituent materials of the first electrode layer 103 and the second electrode layer 105 include: aluminum (Al), molybdenum (Mo), ruthenium (Ru), chromium (Cr), iridium (Ir), platinum (Pt), or the like. The constituent materials of the first electrode layer 103 and the second electrode layer 105 may be the same or different. In one embodiment, the first electrode layer 103 and the second electrode layer 105 are formed from the same material.
The piezoelectric layer 104 can be used for generating vibration according to inverse piezoelectric characteristics, converting electrical signals loaded on the first electrode layer 103 and the second electrode layer 105 into acoustic signals, and converting electrical energy into mechanical energy. In practical applications, the composition of the piezoelectric layer 104 may include: examples of the material having piezoelectric properties include aluminum nitride, zinc oxide, lithium tantalate, lead zirconate titanate, and barium titanate. The constituent material of the piezoelectric layer 104 may also include a material having piezoelectric properties by doping, which may be a transition metal or a rare metal, for example, scandium-doped aluminum nitride or the like.
The reflective structure 102 is used to reflect acoustic signals. When the acoustic wave signal generated by the piezoelectric layer 104 propagates toward the reflective structure 102, the acoustic wave signal may be totally reflected at the interface where the first electrode layer 103 and the reflective structure 102 contact, so that the acoustic wave signal is reflected back into the piezoelectric layer 104. In a specific embodiment, the reflective structure 102 may be a cavity formed between the substrate 101 and the first electrode layer 103.
Here, a region where the reflection structure 102, the first electrode layer 103, the piezoelectric layer 104, and the second electrode layer 105 overlap in the bulk acoustic wave resonator 100 may be defined as an active region 100a, and a region other than the active region 100a in the bulk acoustic wave resonator 100 may be defined as an outer region 100b, as shown in fig. 2.
The frame structure 106 comprises an inner side and an outer side, the distance between the inner side of the frame structure and the edge of the active region 100a being larger than the distance between the outer side of the frame structure and the edge of the active region 100a, i.e. the inner side of the frame structure is further from the edge of the active region and the outer side of the frame structure is closer to the edge of the active region.
In some embodiments, the distance between the outside of the frame structure and the edge of the active region 100a is greater than or equal to zero. It will be appreciated that when the distance between the outer side of the frame structure and the edge of the active region 100a is equal to zero, the outer side of the frame structure coincides with the edge of the active region 100 a. In practical applications, the position of the frame structure can be reasonably set according to design requirements, and the disclosure is not limited herein.
In some embodiments, the profile shape of the inner side of the frame structure comprises: fan-like, semi-circular-like, or irregular polygonal; the profile shape of the outer side of the frame structure comprises: fan-shaped, fan-like, semi-circular-like, or irregular polygonal. Here, the fan-like or semi-circular-like means that the contour shape of the inner/outer side of the frame structure is fan-like or semi-circular-like.
Fig. 3a and 3b are top views of the frame structure 106 shown according to an embodiment of the present disclosure. FIG. 3a is a top view of one frame structure 106 shown in accordance with an embodiment of the present disclosure; fig. 3b is a top view of another frame structure 106 shown in accordance with an embodiment of the present disclosure. Referring to fig. 3a or 3b, the frame structure 106 includes: a first subframe structure 1061 and a second subframe structure 1062; wherein at least one of the medial and lateral profiles of the first subframe structure 1061 includes a first protuberant portion 1063, at least one of the medial and lateral profiles of the second subframe structure 1062 includes a second protuberant portion 1064, and the second protuberant portion 1064 is different from the first protuberant portion 1063.
Second bulge 1064 and first bulge 1063, respectively, include at least one of: the shapes of second protruded portions 1064 and first protruded portions 1063 are different, the number of arrangement cycles of second protruded portions 1064 and first protruded portions 1063 is different, the protruding directions of second protruded portions 1064 and first protruded portions 1063 are different, or the arrangement pitch of second protruded portions 1064 and first protruded portions 1063 is different, and the like.
It should be noted that, when the protruding portions are completely arranged on the outline of the frame structure, the shape, the arrangement period number and the arrangement pitch of any protruding portion are the same, and the protruding portions with different protruding directions form mirror images, and the protruding directions of the protruding portions are the same.
In some embodiments, the shape of the first subframe structure 1061 includes an arcuate portion, and the shape of the second subframe structure 1062 includes at least two linear portions; the curved portion and the at least two straight portions are connected to form the shape of the frame structure 106 as shown in fig. 3a or fig. 3 b.
It should be noted that the shape of the frame structure indicates the shape of the whole frame structure, for example, the top view of the whole frame structure in fig. 3a or fig. 3b, and the shape of the inner/outer contour of the frame structure indicates the shape of the part of the frame structure, for example, the shape of the inner/outer contour of the first sub-frame structure and the shape of the inner/outer contour of the second sub-frame structure, and when the shape of the inner/outer contour of the frame structure is changed, the shape of the frame structure is not affected.
For example, as shown in FIG. 3a, the inner profile of the arc portion (denoted as inner arc) includes a first convex portion 1063, and the outer profile of the arc portion (denoted as outer arc) is an arc; the inner profile (described as inside) of the straight line portion includes the second protruding portion 1064, and the outer profile (described as outside) of the straight line portion is a straight line, so that an irregular frame structure may be formed, and the irregular frame structure may not only suppress the lateral shear wave, prevent the lateral shear wave from propagating from the active region to the external region, reduce energy leakage, and limit energy within the active region, but also may effectively reduce parasitic noise and unnecessary high-order modes by providing the irregular frame structure in the bulk acoustic wave resonator, compared to the case where the conventional frame structure is added in the bulk acoustic wave resonator, so as to reduce the external parasitic resonance (i.e., parasitic noise).
As another example, as shown in FIG. 3b, the inside profile of the arc portion includes a first convex portion 1063, and the outside profile of the arc portion includes a second convex portion 1064; the inner profile of the straight line part includes the second bulge 1064, and the outer profile of the straight line part includes the first bulge 1063, so that an irregular frame structure can be formed, the irregular frame structure can not only inhibit the transverse shear wave, prevent the transverse shear wave from propagating from the active region to the outer region, reduce the energy leakage, limit the energy in the active region, but also can effectively reduce the spurious noise and unnecessary high-order modes and improve the Q value of the bulk acoustic wave resonator compared with the case that the conventional frame structure is added in the bulk acoustic wave resonator, which leads to additional out-of-band spurious resonance (i.e. spurious noise).
It should be noted that in the example shown in fig. 3a or fig. 3b, an arc portion and two straight portions are shown, which may form a fan-like frame structure 106. In other examples, the number of straight portions in the frame structure is not limited to two, but may be three or more. In other embodiments, the number of the straight line portions in the frame structure may also be one, and a semi-circular-like frame structure may be formed, and the disclosure is not limited herein. The shape of the frame structure may also be an ellipse, a polygon, or a combination thereof forming a regular or irregular shape.
In the disclosed embodiment, by providing a frame structure at an edge near an active region, the frame structure including a first sub-frame structure and a second sub-frame structure, and at least one of an inner profile and an outer profile of the first sub-frame structure including a first protruding portion, and at least one of an inner profile and an outer profile of the second sub-frame structure including a second protruding portion different from the first protruding portion, an irregular frame structure may be formed, the irregular frame structure may not only suppress a transverse shear wave, prevent the transverse shear wave from propagating from the active region to an external region, so that energy is concentrated within the active region, reduce leakage of energy, but also cause additional out-of-band spurious resonance (i.e., spurious noise) compared to adding a conventional frame structure in a bulk acoustic wave resonator, the disclosed embodiment may effectively reduce spurious noise and unnecessary high-order modes by providing the irregular frame structure in the bulk acoustic wave resonator, so that a smith chart of the bulk acoustic wave resonator provided with the irregular frame structure is slightly larger than a smith chart of the conventional frame structure, and may be advantageous to increase a Q value of the bulk acoustic wave resonator.
In some embodiments, the shape of the first projection portion comprises an n-sided polygon or arc, n being a positive integer greater than or equal to 3; the shape of the second protruding portion includes an m-sided polygon or an arc, and m is a positive integer greater than or equal to 3.
Fig. 4 shows a schematic view of the shape of first bulge 1063 and 1064 of the second bulge. In one example, first protruded portion 1063 is shaped as a triangle, for example, which may form a saw-toothed profile as shown in fig. 4 (a); in another example, first bulge 1063 is quadrilateral in shape, such as rectangular, and may form a chain-like profile as shown in fig. 4 (b); in yet another example, first bulge 1063 is arcuate in shape, which may form a straight wavy profile as shown in fig. 4 (c).
In one example, the shape of the second protruding portion 1064 is a triangle, which may form a saw-tooth-shaped profile as shown in fig. 4 (d); in another example, the shape of second bulge 1064 is quadrilateral, such as rectangular, which may form a chain-like profile as shown in fig. 4 (e); in yet another example, the shape of 1064 of the second projecting portion is an arc, which may form a straight wavy profile as shown in fig. 4 (f).
Table 1 illustrates various examples of frame structures provided by embodiments of the present disclosure. The first subframe structure will be exemplified by the shape of the curved portion and the second subframe structure will be exemplified by the shape of the straight portion, and the present disclosure will be described in further detail with reference to table 1. In this example, the orientation of the same type of protruding portions is not considered, i.e., the protruding direction of the same type of protruding portions is directed from the edge of the active region to the middle of the active region, and is considered to be the same protruding direction as that directed from the middle of the active region to the edge of the active region.
Table 1 various examples of frame structures
Figure BDA0003890843770000101
In some embodiments, the first sub-frame structure has an inside contour and an outside contour of the same shape; the shape of the inside contour and the outside contour of the second subframe structure is the same and different from the shape of the inside contour and the outside contour of the first subframe structure.
For example, the first projecting portion is rectangular and the second projecting portion is triangular. The inside and outside profiles of the arc portion each include a first convex portion, i.e., the inside and outside profiles of the arc portion are each in the form of a chain, and the inside and outside profiles of the straight portion each include a second convex portion, i.e., the inside and outside profiles of the straight portion are each in the form of a saw tooth, as shown by number 3 in table 1.
For another example, the first projecting portion is triangular and the second projecting portion is rectangular. The inner side profile and the outer side profile of the arc part comprise first convex parts, namely the inner side profile and the outer side profile of the arc part are both in a sawtooth shape; the inner and outer profiles of the straight portion each include a second projecting portion, i.e., the inner and outer profiles of the straight portion are each in the form of a chain, as shown by number 4 in table 1.
In some embodiments, the inside contour of the frame structure comprises a first projecting portion, the shape of the first projecting portion comprising an n-sided polygon, n being a positive integer greater than or equal to 3; the outer profile of the frame structure comprises a second bulge, the shape of the second bulge comprises an m-sided polygon, m is a positive integer greater than or equal to 3, and m and n are different. Here, the inside contour of the frame structure includes inside contours of the first sub-frame structure and the second sub-frame structure, and the outside contour of the frame structure includes outside contours of the first sub-frame structure and the second sub-frame structure.
For example, the first protruding portion is triangular (i.e., n = 3) and the second protruding portion is rectangular (i.e., m = 4). The inner side profile of the arc part comprises a first convex part, and the outer side profile of the arc part comprises a second convex part, namely the inner side profile of the arc part is in a sawtooth shape, and the outer side profile of the arc part is in a chain shape; the inner profile of the straight portion includes a first projecting portion and the outer profile of the straight portion includes a second projecting portion, i.e., the inner profile of the straight portion is saw-toothed and the outer profile is chain-shaped, as shown by number 5 in table 1.
For another example, the first protruding portion is rectangular (i.e., n = 4), and the second protruding portion is triangular (i.e., m = 3). The inner side profile of the arc part comprises a first convex part, and the outer side profile of the arc part comprises a second convex part, namely the inner side profile of the arc part is in a chain shape, and the outer side profile of the arc part is in a sawtooth shape; the inner profile of the straight portion comprises a first projecting portion and the outer profile of the straight portion comprises a second projecting portion, i.e. the inner profile of the straight portion is chain-shaped and the outer profile is saw-toothed, as indicated by number 6 in table 1.
In some embodiments, the shape of the inside contour of the second subframe structure and the shape of the outside contour of the second subframe structure are the same, and at least a portion of the shape of the outside contour of the first subframe structure is different from the shape of the inside contour of the first subframe structure.
For example, the first projecting portion is rectangular and the second projecting portion is triangular. The inner side profile of the arc part comprises a second convex part, and the outer side profile of the arc part comprises a first convex part, namely the inner side profile of the arc part is in a sawtooth shape, and the outer side profile of the arc part is in a chain shape; the inside and outside profiles of the straight portion each include a second convex portion, i.e., the inside and outside profiles of the straight portion are each serrated as shown by number 7 in table 1.
For another example, the first protrusion is rectangular and the second protrusion is triangular. The inner side profile of the arc part comprises a first convex part, and the outer side profile of the arc part comprises a second convex part, namely the inner side profile of the arc part is in a chain shape, and the outer side profile of the arc part is in a sawtooth shape; the inside and outside profiles of the straight portion each include a second convex portion, i.e., the inside and outside profiles of the straight portion are each serrated, as shown by number 8 in table 1.
For another example, the first protrusion is triangular and the second protrusion is rectangular. The inner side profile of the arc part comprises a first convex part, and the outer side profile of the arc part comprises a second convex part, namely the inner side profile of the arc part is in a sawtooth shape, and the outer side profile of the arc part is in a chain shape; the inner and outer profiles of the straight portion each include a second projecting portion, i.e., the inner and outer profiles of the straight portion are each in the form of a chain, as shown by number 11 in table 1.
In a specific example, the medial and lateral profiles of the second subframe structure include second projecting portions; the inside contour of the first subframe structure includes a first projecting portion, the outside contour of the first subframe structure includes a second projecting portion having a greater number of sides than the first projecting portion, as shown by reference numeral 11 in table 1, the second projecting portion is a 4-sided rectangle, and the first projecting portion is a 3-sided triangle.
For another example, the first projecting portion is triangular and the second projecting portion is rectangular. The inner side profile of the arc part comprises a second convex part, and the outer side profile of the arc part comprises a first convex part, namely the inner side profile of the arc part is in a chain shape, and the outer side profile of the arc part is in a sawtooth shape; the inner and outer profiles of the straight portion each include a second convex portion, i.e. the inner and outer profiles of the straight portion are each in the form of a chain, as shown by number 12 in table 1.
In some embodiments, the shape of the inside contour of the first subframe structure and the shape of the outside contour of the first subframe structure are the same, and at least a portion of the shape of the outside contour of the second subframe structure is different from the shape of the inside contour of the second subframe structure.
For example, the first projecting portion is triangular and the second projecting portion is rectangular. The inner side profile and the outer side profile of the arc part comprise first convex parts, namely the inner side profile and the outer side profile of the arc part are both in a sawtooth shape; the inner profile of the straight portion comprises a first projecting portion and the outer profile of the straight portion comprises a second projecting portion, i.e. the inner profile of the straight portion is saw-toothed and the outer profile is chain-like, as indicated by number 9 in table 1.
For another example, the first protrusion is triangular and the second protrusion is rectangular. The inner side profile and the outer side profile of the arc part comprise first convex parts, namely the inner side profile and the outer side profile of the arc part are both in a sawtooth shape; the inner profile of the straight portion includes the second projecting portion and the outer profile of the straight portion includes the first projecting portion, i.e., the inner profile of the straight portion is chain-shaped and the outer profile is saw-toothed, as shown by number 10 in table 1.
For another example, the first projecting portion is rectangular and the second projecting portion is triangular. The inner side profile and the outer side profile of the arc part comprise first convex parts, namely the inner side profile and the outer side profile of the arc part are in a chain shape; the inner profile of the straight portion includes the second projecting portion and the outer profile of the straight portion includes the first projecting portion, i.e., the inner profile of the straight portion is saw-toothed and the outer profile is chain-shaped, as shown by number 13 in table 1.
For another example, the first protrusion is rectangular and the second protrusion is triangular. The inner side profile and the outer side profile of the arc part comprise first convex parts, namely the inner side profile and the outer side profile of the arc part are in a chain shape; the inner profile of the straight portion comprises a first projecting portion and the outer profile of the straight portion comprises a second projecting portion, i.e. the inner profile of the straight portion is chain-shaped and the outer profile is saw-toothed, as indicated by number 14 in table 1.
Fig. 5 shows a scattering parameter diagram of a bulk acoustic wave resonator provided with the frame structures numbered 1 to 14. Referring to fig. 5, the smith charts of the bulk acoustic wave resonators provided with the frame structures numbered 1 to 14 are slightly larger than those of the bulk acoustic wave resonators provided with the normal frame structures (i.e., regular frame structures), and the parasitic resonance in the series resonance region of the bulk acoustic wave resonators provided with the frame structures numbered 1 to 14 is reduced and the Q value of the bulk acoustic wave resonators provided with the frame structures numbered 1 to 14 is increased, compared to the bulk acoustic wave resonators provided with the normal frame structures.
With reference to table 1, in the frame structures of nos. 1 and 2, the inside and outside profiles of the arc portion are the same as those of the straight portion; the frame structures numbered 3 to 14, wherein at least one of the inside profile and the outside profile of the arc portion is different from at least one of the inside profile and the outside profile of the straight portion. In the scattering parameter diagram shown in fig. 5, the bulk acoustic wave resonators having the frame structures of numbers 3 to 14 have fewer parasitic resonances and a larger Q value than the bulk acoustic wave resonators having the frame structures of numbers 1 and 2, wherein the bulk acoustic wave resonators having the frame structures of numbers 3, 5, 6, 7, 8, 13 and 14 have fewer parasitic resonances and a larger Q value, and the bulk acoustic wave resonator having the frame structure of number 11 has almost no parasitic resonances and energy losses, has the largest Q value, and has the best performance.
In some embodiments, the inner profile of the first subframe structure comprises a first projecting portion; wherein a projecting direction of the first projecting portion of the inner profile of the first subframe structure is directed from an edge of the active region to a middle of the active region; the outer profile of the first subframe structure comprises a first projecting portion; wherein a projecting direction of the first projecting portion of the outer profile of the first subframe structure is directed from a middle of the active region to an edge of the active region.
It will be appreciated that in this example, the inside and outside contours of the first subframe structure each include a first projecting portion, and the first projecting portion of the inside contour of the first subframe structure projects in a direction opposite to that of the first projecting portion of the outside contour of the first subframe structure, one of the inside and outside contours of the second subframe structure includes a second projecting portion, and the other of the inside and outside contours of the second subframe structure includes a first projecting portion or straight line.
In some embodiments, the inner profile of the second subframe structure comprises a second projecting portion; wherein a projecting direction of the second projecting portion of the inner profile of the second subframe structure is directed from the edge of the active region to a middle of the active region; the outer profile of the second subframe structure comprises a second projecting portion; wherein a projecting direction of the second projecting portion of the outer profile of the second subframe structure is directed from a middle of the active region to an edge of the active region.
It will be appreciated that in this example, the medial and lateral profiles of the second subframe structure each include a second projecting portion, and the second projecting portion of the medial profile of the second subframe structure projects in an opposite direction to the second projecting portion of the lateral profile of the second subframe structure, one of the medial and lateral profiles of the first subframe structure including the first projecting portion, and the other of the medial and lateral profile of the first subframe structure including the second projecting portion or the arc.
In some embodiments, the medial profile and the lateral profile of the first subframe structure each comprise a first projecting portion; the inside profile and the outside profile of the second sub-frame structure each comprise a second projecting portion; wherein the projecting direction of the first projecting portion of the inside contour of the first subframe structure and the second projecting portion of the inside contour of the second subframe structure is directed from the edge of the active region to the middle of the active region; the projecting direction of the first projecting portion of the outer profile of the first subframe structure and the second projecting portion of the outer profile of the second subframe structure is directed from the middle of the active region to the edge of the active region.
It will be appreciated that in this example, both the inside and outside contours of the first subframe structure comprise first projecting portions, and the projecting direction of the first projecting portions of the inside contour of the first subframe structure is opposite to the projecting direction of the first projecting portions of the outside contour of the first subframe structure; the inside contour and the outside contour of the second subframe structure each comprise a second projecting portion, and the projecting direction of the second projecting portion of the inside contour of the second subframe structure is opposite to the projecting direction of the second projecting portion of the outside contour of the second subframe structure.
In some embodiments, the direction of projection of the first projecting portion is the same as the direction of projection of the second projecting portion. For example, the projecting direction of the first projecting portion and the projecting direction of the second projecting portion are both directed toward the center of the active region by the edge of the active region; alternatively, the projecting direction of the first projecting portion and the projecting direction of the second projecting portion are both directed toward the edge of the active region from the middle of the active region.
In some embodiments, the direction of projection of the first projecting portion is opposite to the direction of projection of the second projecting portion. For example, the projection direction of the first projection portion is directed from the edge of the active region to the middle of the active region, and the projection direction of the second projection portion is directed from the middle of the active region to the edge of the active region; alternatively, the first protruding portion has a protruding direction directed from the center of the active region to the edge of the active region, and the second protruding portion has a protruding direction directed from the edge of the active region to the center of the active region.
In some embodiments, the first protruding portions are arranged periodically, the number of periods being 3 or more. In one example, the inner profile of the first subframe structure includes a plurality of first projections, the first projections being periodically arranged with a period number of 3 or more, the number of first projections per period being greater than 1. In another example, the outer profile of the first subframe structure includes a plurality of first projections, the first projections being periodically arranged with a period number equal to or greater than 3, the number of first projections per period being greater than 1.
It should be noted that, when both the inside contour and the outside contour of the first subframe structure include a plurality of first protruding portions arranged periodically, the number of periods of the first protruding portions of the inside contour of the first subframe structure and the number of periods of the first protruding portions of the outside contour of the first subframe structure may be the same or different; the number of first projecting portions per period of the inside contour of the first subframe structure and the number of first projecting portions per period of the outside contour of the first subframe structure may be the same or different.
In some embodiments, the first projecting portion is arranged completely or partially in at least one of an inside contour and an outside contour of the first subframe structure. For example, as shown in fig. 3a, first protruded portions 1063 are arranged entirely within the inside contour of first subframe structure 1061; for another example, as shown in fig. 3c, the first protruding portions 1063 are arranged partially inside the contour of the first subframe structure 1061.
In the embodiments of the present disclosure, by providing the frame structure near the edge of the active region, and at least one of the inner profile and the outer profile of the first sub-frame structure includes the first protruding portions, the first protruding portions are periodically arranged, and the number of cycles is greater than or equal to 3, an irregular frame structure may be formed, and the irregular frame structure may not only suppress the lateral shear wave and prevent the lateral shear wave from propagating from the active region to the external region, so that energy is concentrated in the active region, and energy leakage is reduced, but also may cause additional out-of-band parasitic resonance (i.e., parasitic noise) compared to adding a conventional frame structure in the bulk acoustic wave resonator.
In some embodiments, the second protruding portions are arranged periodically with a period of 3 or more. In one example, the inside contour of the second subframe structure includes a plurality of second protruding portions, the second protruding portions are periodically arranged with a period number of 3 or more, and the number of second protruding portions per period is 1 or more. In another example, the outer profile of the second subframe structure includes a plurality of second projections, the second projections being periodically arranged with a period number of 3 or more, the number of second projections per period being greater than 1. It should be noted that, when both the inside contour and the outside contour of the second subframe structure include a plurality of second protruding portions arranged periodically, the number of periods of the second protruding portions of the inside contour of the second subframe structure and the number of periods of the second protruding portions of the outside contour of the second subframe structure may be the same or different; the number of second projecting portions per period of the inside contour of the second subframe structure and the number of second projecting portions per period of the outside contour of the second subframe structure may be the same or different.
In some embodiments, the second projecting portion is arranged completely or partially in at least one of an inside contour and an outside contour of the second subframe structure. For example, as shown in fig. 3a, second protruded portion 1064 is completely arranged on the inside contour of second subframe structure 1062; for another example, the second projecting portion is arranged at an inner contour of the second sub-frame structure.
In the embodiments of the present disclosure, by providing the frame structure near the edge of the active region, and at least one of the inner profile and the outer profile of the second sub-frame structure includes the second protruding portions, the second protruding portions are periodically arranged, and the period number is greater than or equal to 3, an irregular frame structure may be formed, and the irregular frame structure may not only suppress the lateral shear wave and prevent the lateral shear wave from propagating from the active region to the external region, so that the energy is concentrated in the active region, and the leakage of the energy is reduced, but also may cause additional out-of-band parasitic resonance (i.e., parasitic noise) compared to adding a conventional frame structure in the bulk acoustic wave resonator.
Fig. 6 is a top view of another frame structure 106 shown in accordance with an embodiment of the present disclosure. Referring to fig. 6, two adjacent second protruded portions 1064 are spaced apart from each other; wherein the second projecting portion of the inside profile of the second subframe structure 1062 is disposed opposite and connected to the second projecting portion of the outside profile of the second subframe structure 1062. The adjacent two convex parts are arranged at intervals in a way that a groove arranged between the two convex parts is completely disconnected (as shown in figure 6); alternatively, the two raised portions may be separated by a non-raised portion (as shown in FIG. 3 a).
It will be appreciated that in this example, the inside profile and the outside profile of the second subframe structure 1062 each include a plurality of second protruded portions 1064, and the protruded direction of the second protruded portions 1064 of the inside profile of the second subframe structure 1062 is opposite to the protruded direction of the second protruded portions 1064 of the outside profile of the second subframe structure 1062, two adjacent second protruded portions 1064 of the inside profile of the second subframe structure 1062 are spaced apart, two adjacent second protruded portions 1064 of the outside profile are spaced apart, and the second protruded portions 1064 of the inside profile of the second subframe structure 1062 are disposed opposite to and connected to the second protruded portions 1064 of the outside profile, as shown in fig. 6, the second subframe structure 1062 of the frame structure is interrupted.
In some embodiments, the spacing between two adjacent second protruded portions 1064 is greater than 1 micron. For example, the spacing between two adjacent second projecting portions 1064 in the inside profile of the second subframe structure 1062 is greater than 1 micron, and the spacing between two adjacent second projecting portions 1064 in the outside profile of the second subframe structure 1062 is greater than 1 micron.
In some embodiments, the spacing between adjacent second projections 1064 in the inside profile of the second subframe structure 1062 is equal to the spacing between adjacent second projections 1064 in the outside profile of the second subframe structure 1062.
In some embodiments, two adjacent first protruded portions 1063 are spaced apart from each other; wherein the first convex portion of the inside profile of the first subframe structure 1061 is disposed opposite and connected to the first convex portion of the outside profile of the first subframe structure 1061.
It will be appreciated that in this example, the inside and outside contours of the first subframe structure 1061 each include a plurality of first protruded portions 1063, and the protruded direction of the first protruded portions 1063 of the inside contour of the first subframe structure 1061 is opposite to the protruded direction of the first protruded portions 1063 of the outside contour of the first subframe structure 1061, two adjacent first protruded portions 1063 of the inside contour of the first subframe structure 1061 are spaced apart, two adjacent first protruded portions 1063 of the outside contour are spaced apart, and the first protruded portions 1063 of the inside contour of the first subframe structure 1061 are disposed opposite to and connected to the first protruded portions 1063 of the outside contour, as shown in fig. 6, the first subframe structure 1061 of the frame structure is discontinuous.
In some embodiments, a pitch between adjacent two first projection portions is greater than 1 micrometer. For example, the spacing between two adjacent first projecting portions 1063 in the inside profile of the first subframe structure 1061 is greater than 1 micron, and the spacing between two adjacent first projecting portions 1063 in the outside profile of the first subframe structure 1061 is greater than 1 micron.
In some embodiments, the spacing between adjacent ones of the first projecting portions 1063 in the inside profile of the first subframe structure 1061 is equal to the spacing between adjacent ones of the first projecting portions 1063 in the outside profile of the first subframe structure 1061.
In some embodiments, the shape of the frame structure is symmetrical about an axis, the first sub-frame structure being located on one side of the axis of symmetry and the second sub-frame structure being located on the other side of the axis of symmetry.
For example, as shown in fig. 3a to 3c, the shape of the frame structure is axisymmetrical about the dashed line L, and the frame structure may be divided into two portions according to the dashed line L, and a portion located on one side of the dashed line L is referred to as a first sub-frame structure, and a portion located on the other side of the dashed line L is referred to as a second sub-frame structure. The shape of the inside contour of the first sub-frame structure, the shape of the outside contour of the first sub-frame structure, the shape of the inside contour of the second sub-frame structure, or the shape of the outside contour of the second sub-frame structure comprises: straight wave, saw tooth, chain, etc. At least one of the shape of the inside contour of the first sub-frame structure and the shape of the outside contour of the first sub-frame structure is different from at least one of the shape of the inside contour of the second sub-frame structure and the shape of the outside contour of the second sub-frame structure.
The shapes of the first and second projecting portions may be similar to those of the above-described embodiments, and are not described herein again.
In the disclosed embodiment, by providing a frame structure at an edge near an active region, the frame structure including a first sub-frame structure and a second sub-frame structure, and at least one of an inner profile and an outer profile of the first sub-frame structure including a first protruding portion, and at least one of an inner profile and an outer profile of the second sub-frame structure including a second protruding portion different from the first protruding portion, an irregular frame structure may be formed, the irregular frame structure may not only suppress a transverse shear wave, prevent the transverse shear wave from propagating from the active region to an external region, so that energy is concentrated within the active region, reduce leakage of energy, but also cause additional out-of-band spurious resonance (i.e., spurious noise) compared to adding a conventional frame structure in a bulk acoustic wave resonator, the disclosed embodiment may effectively reduce spurious noise and unnecessary high-order modes by providing the irregular frame structure in the bulk acoustic wave resonator, so that a smith chart of the bulk acoustic wave resonator provided with the irregular frame structure is slightly larger than a smith chart of the conventional frame structure, and may be advantageous to increase a Q value of the bulk acoustic wave resonator.
Fig. 7 is a flow chart illustrating a method of fabricating a bulk acoustic wave resonator according to an embodiment of the present disclosure.
Referring to fig. 7, the method includes at least the following steps:
s100: providing a substrate;
s200: forming a reflective structure, a first electrode layer, a piezoelectric layer and a second electrode layer stacked in this order on a substrate;
s300: forming a frame structure on the second electrode layer; wherein the frame structure is close to the edge of the active region; the frame structure comprises a first sub-frame structure and a second sub-frame structure; wherein at least one of the inside and outside contours of the first subframe structure includes a first projecting portion and at least one of the inside and outside contours of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.
In step S100, the constituent materials of the substrate include elemental semiconductor materials (e.g., silicon, germanium), iii-v compound semiconductor materials, ii-vi compound semiconductor materials, organic semiconductor materials, or other semiconductor materials known in the art.
In step S200, the reflective structure, the first electrode layer, the piezoelectric layer, and the second electrode layer as shown in fig. 2 may be formed on the substrate through a thin film deposition, photolithography, and etching process.
In step S300, the frame structure in any of the above embodiments may be formed on the second electrode layer through a thin film deposition process, a photolithography process, and an etching (or lift-off) process.
In the embodiments of the present disclosure, by forming the frame structure on the second electrode layer at a position close to the edge of the active region, and arranging the outlines of the inner sides of the frame structure in the n first protruding portions as a period, an irregular frame structure may be formed, which may not only suppress the lateral shear wave and prevent the lateral shear wave from propagating from the active region to the external region, so that the energy is concentrated in the active region, and the energy leakage is reduced, but also may effectively reduce the spurious noise and unnecessary high-order modes and improve the Q value of the bulk acoustic wave resonator, compared to the case where a conventional frame structure is added to the bulk acoustic wave resonator, thereby causing additional out-of-band spurious resonance (i.e., spurious noise).
In some embodiments, the forming a frame structure on the second electrode layer includes: forming a frame material layer at least covering the edge of the active region on the second electrode layer; and etching the frame material layer according to the mask pattern to form a frame structure. For example, the frame structure in any of the above embodiments may be formed by forming a mask layer covering the frame material layer, transferring the pattern in the mask to the mask layer, forming a mask pattern, and etching the frame material layer according to the mask pattern. In practical application, the pattern of the mask can be reasonably designed according to the requirement of a device.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present disclosure, and shall cover the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (16)

1. A bulk acoustic wave resonator, comprising:
a substrate;
a reflective structure, a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially stacked on a substrate;
a frame structure on the second electrode layer and near an edge of the active region, comprising: a first sub-frame structure and a second sub-frame structure; wherein at least one of the inside and outside contours of the first subframe structure includes a first projecting portion and at least one of the inside and outside contours of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.
2. The bulk acoustic wave resonator according to claim 1, wherein the shape of the first sub-frame structure comprises an arcuate portion and the shape of the second sub-frame structure comprises at least two linear portions; the curved portion and the at least two linear portions are connected to form the shape of the frame structure.
3. The bulk acoustic wave resonator according to claim 1, wherein the shape of the frame structure is symmetrical about an axis, the first sub-frame structure being located on one side of the axis of symmetry, the second sub-frame structure being located on the other side of the axis of symmetry.
4. The bulk acoustic wave resonator according to any one of claims 1 to 3,
the shape of the first protruding part comprises an n-polygon or an arc, wherein n is a positive integer greater than or equal to 3;
the shape of the second protruding part comprises an m-edge shape or an arc shape, and m is a positive integer greater than or equal to 3.
5. The bulk acoustic wave resonator according to any one of claims 1 to 3,
the inner profile of the first subframe structure comprises the first projecting portion; wherein a projecting direction of a first projecting portion of an inside contour of the first subframe structure is directed from an edge of the active region to a middle of the active region;
the outer profile of the first subframe structure comprises the first projecting portion; wherein a projecting direction of the first projecting portion of the outer profile of the first subframe structure is directed from a middle of the active region to an edge of the active region.
6. The bulk acoustic wave resonator according to any one of claims 1 to 3,
the inner profile of the second subframe structure comprises the second projecting portion; wherein a projecting direction of a second projecting portion of the inner profile of the second subframe structure is directed from an edge of the active region to a middle of the active region;
the outer profile of the second subframe structure comprises the second projecting portion; wherein a projecting direction of the second projecting portion of the outer profile of the second subframe structure is directed from a middle of the active region to an edge of the active region.
7. The bulk acoustic wave resonator according to claim 1, wherein a protruding direction of the first protruding portion is the same as or opposite to a protruding direction of the second protruding portion.
8. The bulk acoustic wave resonator according to any one of claims 1 to 3,
the first protruding parts are arranged periodically, and the periodicity is more than or equal to 3;
the second protruding parts are arranged periodically, and the periodicity is more than or equal to 3.
9. The bulk acoustic wave resonator according to claim 8,
two adjacent first protruding parts are arranged at intervals;
two adjacent second protruding parts are arranged at intervals.
10. The bulk acoustic wave resonator according to claim 9,
the distance between two adjacent first protruding parts is larger than 1 micrometer;
the distance between two adjacent second protruding parts is larger than 1 micron.
11. The bulk acoustic wave resonator according to claim 2 or 3,
the inner profile of the frame structure comprises the first convex part, the shape of the first convex part comprises an n-polygon, and n is a positive integer greater than or equal to 3;
the outer profile of the frame structure comprises the second protruding portion, the shape of the second protruding portion comprises an m-sided polygon, m is a positive integer greater than or equal to 3, and m and n are different.
12. The bulk acoustic wave resonator according to claim 2 or 3,
the shape of the inside contour of the first subframe structure and the shape of the outside contour of the first subframe structure are the same, and at least a portion of the shape of the outside contour of the second subframe structure is different from the shape of the inside contour of the second subframe structure.
13. The bulk acoustic wave resonator according to claim 2 or 3,
the shape of the inside contour of the second sub-frame structure is the same as the shape of the outside contour of the second sub-frame structure, and at least a portion of the shape of the outside contour of the first sub-frame structure is different from the shape of the inside contour of the first sub-frame structure.
14. The bulk acoustic wave resonator according to claim 13,
the inside and outside contours of the second subframe structure comprise the second projecting portion;
the inner profile of the first subframe structure includes the first projecting portions, the outer profile of the first subframe structure includes the second projecting portions, and the number of sides of the second projecting portions is greater than the number of sides of the first projecting portions.
15. The bulk acoustic wave resonator according to claim 2 or 3,
the first sub-frame structure has an inside contour and an outside contour of the same shape;
the shape of the inside and outside contours of the second subframe structure is the same and different from the shape of the inside and outside contours of the first subframe structure.
16. A method of fabricating a bulk acoustic wave resonator, comprising:
providing a substrate;
forming a reflecting structure, a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially stacked on the substrate;
forming a frame structure on the second electrode layer; wherein the frame structure is near the edge of the active region; the frame structure comprises a first sub-frame structure and a second sub-frame structure; at least one of the medial and lateral profiles of the first subframe structure includes a first projecting portion, and at least one of the medial and lateral profiles of the second subframe structure includes a second projecting portion, the second projecting portion being different from the first projecting portion.
CN202211260246.3A 2022-10-14 2022-10-14 Bulk acoustic wave resonator and method of manufacturing the same Pending CN115694402A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115842530A (en) * 2023-02-27 2023-03-24 武汉敏声新技术有限公司 Bulk acoustic wave resonator and method for manufacturing bulk acoustic wave resonator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115842530A (en) * 2023-02-27 2023-03-24 武汉敏声新技术有限公司 Bulk acoustic wave resonator and method for manufacturing bulk acoustic wave resonator

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