CN218182205U

CN218182205U - High-power IGBT copper-clad substrate structure

Info

Publication number: CN218182205U
Application number: CN202221812066.7U
Authority: CN
Inventors: 郝文煊; 陆均尧; 张鹏
Original assignee: Shandong Sli Microelectronics Co ltd
Current assignee: Shandong Sli Microelectronics Co ltd
Priority date: 2022-07-14
Filing date: 2022-07-14
Publication date: 2022-12-30
Anticipated expiration: 2032-07-14

Abstract

The utility model provides a high-power IGBT covers copper substrate structure, including the bottom plate, the one end fixedly connected with output end stitch of bottom plate, the other end fixedly connected with gate-level stitch of bottom plate, the top of bottom plate is through first soldering tin layer and the main bottom welded connection who covers the copper substrate, and the main one side that covers copper substrate top sets up to the power end, and the adjacent both sides of power end all set up to the signal end. The utility model discloses beneficial effect: through covering copper substrate cooperation fourth soldering tin layer with the door level and mainly covering power end welded fastening on the copper substrate, can avoid having the power part of high-power heavy current to cause the interference to door level signal part at the during operation, through ceramic plate and protection copper sheet, be convenient for improve the radiating effect, utilize logical groove on the protection copper sheet, make the upper and lower two sides of ceramic plate respectively with two protection copper sheet between area of contact's difference reduce, reduce two protection copper sheets respectively to the difference of ceramic plate bulk stress size, thereby protect overall structure, increase the reliability of module.

Description

High-power IGBT copper-clad substrate structure

Technical Field

The utility model belongs to the technical field of the IGBT module encapsulation, concretely relates to high-power IGBT covers copper substrate structure.

Background

An IGBT is a device formed by matching an MOSFET and a bipolar transistor, and in the production process of an IGBT module, the IGBT module is generally provided with a copper-clad substrate structure.

The SiC MOSFET module ceramic copper-clad plate structure disclosed by the application number of CN202021151093.5 is an increasingly mature technology, and comprises a bottom plate, an upper bridge arm, a lower bridge arm, a connecting bridge and an aluminum wire, wherein the middle part of the bottom plate is vertically crossed and uniformly provided with a plurality of welding areas, the upper bridge arm comprises a first copper-clad ceramic substrate, a third copper-clad ceramic substrate and a sixth copper-clad ceramic substrate which are arranged on the middle upper part of the edge of the bottom plate, the signal end of the upper bridge arm is exposed, the lower bridge arm comprises a second copper-clad ceramic substrate, a fourth copper-clad ceramic substrate and a fifth copper-clad ceramic substrate which are arranged on the other side of the edge of the bottom plate, the signal end of the lower bridge arm is exposed, the lower bridge arm is convenient to connect with a driving plate, and the first copper-clad ceramic substrate, the second copper-clad ceramic substrate, the third copper-clad ceramic substrate and the fourth copper-clad ceramic substrate are uniformly arranged on the welding areas in a shape of a Chinese character 'tian'; each copper-clad ceramic substrate is provided with a chip welding area and a plurality of grid resistors, the chip welding area is connected with a SIC MOSFET chip and a SIC SBD chip in series through an aluminum wire, and the grid of the SIC MOSFET chip is connected with the signal end of the copper-clad ceramic substrate of the welding area after being connected with the grid resistors in series, but the structure has the following defects:

although this copper-clad substrate structure can design and realize high-power module, do not effectively utilize spatial structure, can't be in the same structure of same regional stack, lack the design that integrates, lack the protection architecture to the module simultaneously.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a high-power IGBT covers copper substrate structure, aim at solving among the prior art current IGBT and cover copper substrate and do not effectively utilize spatial structure, can't overlap the same structure in same region, lack the design that integrates, lack the problem to module protection architecture simultaneously.

In order to achieve the above object, the utility model provides a following technical scheme: the high-power IGBT copper-clad substrate structure comprises a bottom plate, wherein one end of the bottom plate is fixedly connected with an output end pin, the other end of the bottom plate is fixedly connected with a gate pin, the top of the bottom plate is connected with the bottom of a main copper-clad substrate in a welding mode through a first soldering tin layer, one side of the top of the main copper-clad substrate is set to be a power end, and two adjacent sides of the power end are set to be signal ends.

In order to make the installation IGBT board of being convenient for, as the utility model relates to an it is preferable, the main bottom fixed connection who covers the bottom of soldering tin layer and IGBT board is passed through at the middle part at copper base plate top.

In order to make be convenient for install the FRD board, conduct the utility model relates to an it is preferable, the opposite side that mainly covers copper base plate top passes through third soldering tin layer and FRD board welded connection.

In order to make and avoid high-power to cause the interference to the door level signal part, as the utility model relates to an it is preferred, the top of power end is through the bottom welded connection of fourth soldering tin layer AND gate level cover copper base plate.

In order to make the indirect area that increases the signal end on covering the copper base plate, as the utility model relates to an it is preferred, the bottom of signal end is through the top welded connection of fifth soldering tin layer with main covering the copper base plate.

In order to make to reduce the heat on covering the copper base plate, avoid the bonding in-process to appear the short circuit simultaneously, as the utility model relates to an it is preferred, the inside on first soldering tin layer, second soldering tin layer, third soldering tin layer, fourth soldering tin layer and fifth soldering tin layer all is filled there is the tin solder, the equal fixed mounting in top of covering the copper base plate of IGBT board, FRD board and gate-level has the chip.

In order to make to be convenient for carry out bonding process, promote the reliability of module, as the utility model relates to an it is preferred, all through bonding wire fixed connection between the chip at gate level stitch, gate level copper-clad base plate, IGBT board, FRD board and output stitch top.

In order to make the structure of being convenient for strengthen covering the copper base plate, improve its thermal diffusivity simultaneously, as the utility model relates to a preferred, the main bottom of covering the copper base plate is provided with the ceramic plate, the top and the equal fixed mounting in bottom of ceramic plate have the protection copper sheet, two the logical groove of equidimension not has all been seted up on the surface of protection copper sheet, the bottom fixed mounting of protection copper sheet has the soldering lug.

Compared with the prior art, the beneficial effects of the utility model are that:

1) The gate-level copper-clad substrate is matched with the fourth soldering tin layer and is welded and fixed with the power end on the main copper-clad substrate, so that large and small currents can be separated conveniently, the interference of a power part with large power and large current on a gate-level signal part during working can be effectively avoided, the problem of mistaken touch short circuit among wire diameters in an aluminum wire which is repeatedly connected inside can also be avoided, and the space can be saved due to the upward stacked three-dimensional copper-clad substrate structure;

2) Through the ceramic plate and the protection copper sheet that are equipped with, be convenient for improve the radiating effect who covers the copper base plate, utilize logical groove on the protection copper sheet for the upper and lower two sides of ceramic plate respectively with two protection copper sheets between area of contact's difference reduce, thereby dwindle two protection copper sheets respectively to the holistic difference of stress size of ceramic plate, thereby protect overall structure, increase the reliability of module.

Drawings

Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention;

fig. 2 is one of the schematic structural diagrams of embodiment 1 of the present invention;

fig. 3 is one of the schematic structural diagrams of embodiment 1 of the present invention;

fig. 4 is a schematic structural diagram of embodiment 2 of the present invention.

In the figure: 1. a base plate; 11. output end pins; 12. a gate level pin; 2. a first solder layer; 3. a main copper-clad substrate; 31. a power terminal; 32. a signal terminal; 33. a second solder layer; 34. an IGBT board; 35. a third solder layer; 36. an FRD plate; 37. a fourth solder layer; 38. a gate-level copper-clad substrate; 39. a fifth solder layer; 4. a chip; 5. a bonding wire; 6. a ceramic plate; 61. protecting the copper sheet; 62. a through groove; 63. and (7) soldering lugs.

Detailed Description

Embodiments of the present invention are further described below with reference to the accompanying drawings:

example 1

Referring to fig. 1-3, the present invention provides the following technical solutions: high-power IGBT covers copper substrate structure, including bottom plate 1, the one end fixedly connected with output end stitch 11 of bottom plate 1, the other end fixedly connected with gate-level stitch 12 of bottom plate 1, the top of bottom plate 1 is through first soldering tin layer 2 and the main bottom welded connection who covers copper substrate 3, and the main one side that covers copper substrate 3 top sets up to power end 31, and the both sides that power end 31 is adjacent all set up to signal end 32.

When the copper-clad substrate is used specifically, the output end pins 11 and the gate-level pins 12 are fixedly connected with two ends of the bottom plate 1 respectively, and the main copper-clad substrate 3 is matched with the first soldering tin layer 2 and welded on the top of the bottom plate 1.

In this embodiment, the middle of the top of the main copper clad substrate 3 is fixedly connected to the bottom of the IGBT board 34 via the second solder layer 33.

When the copper clad base plate is used specifically, the second soldering tin layer 33 is used for welding the IGBT board 34 on the middle part of the top of the main copper clad base plate 3.

In this embodiment, the other side of the top of the main copper clad substrate 3 is connected to the FRD board 36 by soldering through the third solder layer 35.

In a specific use, the FRD board 36 is soldered to the other side of the top of the main copper-clad substrate 3 by the third solder layer 35, thereby matching the operation of the module.

In this embodiment, the top of the power terminal 31 is soldered to the bottom of the copper-clad substrate 38 via the fourth solder layer 37.

When the novel gate-level soldering tin is used specifically, the gate-level copper-clad substrate 38 is welded to the top of the power end 31 through the fourth soldering tin layer 37, the area of the power end 31 cannot be reduced, meanwhile, the interference of a power part with high power and high current on a gate-level signal part is avoided, and the space is saved.

In this embodiment, the bottom of the signal terminal 32 is connected to the top of the main copper-clad substrate 3 by soldering via the fifth solder layer 39.

When the signal terminal 32 is used, the signal terminal 32 is welded to the top of the main copper-clad substrate 3 through the fifth soldering tin layer 39, so that the area of the structure on the signal terminal 32 is increased, and the conductivity is enhanced.

In this embodiment, the first solder layer 2, the second solder layer 33, the third solder layer 35, the fourth solder layer 37, and the fifth solder layer 39 are filled with solder, and the chip 4 is fixed to the top of each of the IGBT board 34, the FRD board 36, and the gate-level copper-clad substrate 38.

When the chip is used specifically, a plurality of chips 4 with corresponding quantity are respectively arranged on welding areas on the tops of the IGBT board 34, the FRD board 36 and the gate-level copper-clad substrate 38.

In this embodiment, the gate-level pin 12, the gate-level copper-clad substrate 38, the IGBT board 34, the FRD board 36, and the chip 4 on the top of the output terminal pin 11 are all fixedly connected by the bonding wire 5.

When the circuit is used specifically, the gate-level pins 12, the gate-level copper-clad substrate 38, the IGBT board 34, the FRD board 36 and the chip 4 on the top of the output terminal pins 11 are electrically connected by using the bonding wires 5.

The working principle is as follows: during the use, fourth soldering tin layer 37 covers copper base plate 38 with gate level and welds the top at power end 31, can not reduce power end 31 area, avoid simultaneously having the power part of high-power heavy current to cause the interference to gate level signal part at the during operation, save space, second soldering tin layer 33 covers copper base plate 3 middle part at the top with IGBT board 34 welding, third soldering tin layer 35 covers copper base plate 3 opposite side at the top with FRD board 36 welding, make the module more integrated, the structure on the signal end 32 is cut apart before, the electric conductivity of module has been increased, regular arrangement mode simultaneously, in the aluminium wire of avoiding the inside reconnection of module, the problem of short circuit appears bumping by mistake between the line footpath, utilize bonding wire 5 with gate level stitch 12, gate level covers copper base plate 38, IGBT board 34, electric connection between FRD board 36 and the output stitch 11 top chip 4, avoid bonding process to appear the short circuit phenomenon.

Example 2

Referring to fig. 4, in order to improve the heat dissipation effect and protect the module structure, the difference between the embodiment and the above embodiment is: in this embodiment, the bottom of the main copper-clad substrate 3 is provided with the ceramic plate 6, the top and the bottom of the ceramic plate 6 are fixedly provided with the protection copper sheets 61, the through grooves 62 with different sizes are formed on the surfaces of the two protection copper sheets 61, and the bottom of the protection copper sheets 61 is fixedly provided with the soldering lugs 63.

When specifically using, utilize ceramic plate 6 and protection copper sheet 61 to be convenient for improve inside radiating effect, utilize two protection copper sheets 61 to go up logical groove 62 of equidimension not for the two sides reduce with area of contact's difference between two protection copper sheets 61 respectively about the ceramic plate 6, thereby dwindle two protection copper sheets 61 respectively to the holistic difference of stress size of ceramic plate, thereby protect overall structure, increase the reliability of module.

Claims

1. High-power IGBT copper-clad substrate structure, including bottom plate (1), its characterized in that: the improved copper-clad plate is characterized in that an output end pin (11) is fixedly connected to one end of the bottom plate (1), a gate-level pin (12) is fixedly connected to the other end of the bottom plate (1), the top of the bottom plate (1) is connected with the bottom of a main copper-clad substrate (3) in a welded mode through a first soldering tin layer (2), a power end (31) is arranged on one side of the top of the main copper-clad substrate (3), and signal ends (32) are arranged on two adjacent sides of the power end (31).

2. The high power IGBT copper clad substrate structure of claim 1, characterized in that: the middle part of the top of the main copper-clad substrate (3) is fixedly connected with the bottom of the IGBT board (34) through a second soldering tin layer (33).

3. The high-power IGBT copper-clad substrate structure according to claim 1, characterized in that: the other side of the top of the main copper-clad substrate (3) is connected with an FRD plate (36) in a welding mode through a third soldering tin layer (35).

4. The high-power IGBT copper-clad substrate structure according to claim 1, characterized in that: the top of the power terminal (31) is connected with the bottom of the copper-clad base plate (38) through a fourth soldering tin layer (37) in a welding mode.

5. The high power IGBT copper clad substrate structure of claim 1, characterized in that: the bottom of the signal terminal (32) is connected with the top of the main copper-clad substrate (3) through a fifth soldering tin layer (39) in a welding mode.

6. The high power IGBT copper clad substrate structure of claim 2, characterized in that: the first soldering tin layer (2), the second soldering tin layer (33), the third soldering tin layer (35), the fourth soldering tin layer (37) and the fifth soldering tin layer (39) are filled with tin solder, and the chips (4) are fixedly mounted on the tops of the IGBT board (34), the FRD board (36) and the gate-level copper-clad substrate (38).

7. The high power IGBT copper clad substrate structure of claim 1, characterized in that: the gate-level pins (12), the gate-level copper-clad substrate (38), the IGBT board (34), the FRD board (36) and the chip (4) at the top of the output terminal pin (11) are fixedly connected through bonding wires (5).

8. The high power IGBT copper clad substrate structure of claim 1, characterized in that: the copper-clad plate is characterized in that a ceramic plate (6) is arranged at the bottom of the main copper-clad substrate (3), protective copper sheets (61) are fixedly mounted at the top and the bottom of the ceramic plate (6) respectively, through grooves (62) with different sizes are formed in the surface of each protective copper sheet (61), and soldering lugs (63) are fixedly mounted at the bottom of each protective copper sheet (61).