CN218123347U - Ion implantation electrode and ion implanter - Google Patents

Abstract

The application relates to the technical field of semiconductor manufacturing equipment, and aims to provide an ion implantation electrode and an ion implanter, which can enable ion beams conveyed by the ion implantation electrode to be more concentrated and higher in beam current. The ion injection electrode comprises a connecting plate, wherein an annular ion beam guiding opening protruding in the direction away from the connecting plate is formed in the upper surface of the connecting plate, the annular ion beam guiding opening penetrates through the connecting plate, and an inner ring of the annular ion beam guiding opening forms an ion movement channel. Specifically, the ion implanter includes any one of the ion implantation electrodes described above, and the ion implantation electrode is configured to implant an ion beam into a processing object.

Description

Ion implantation electrode and ion implanter

Technical Field

The application relates to the technical field of semiconductor manufacturing equipment, in particular to an ion implantation electrode and an ion implanter.

Background

In the preparation of ultra-high speed, microwave and medium-large scale integrated circuits, the junction depth and the base region width of the device are as small as a few tenths of microns, which is difficult to achieve by a common diffusion process. The ion implantation technology can just make up for the deficiency of the diffusion process.

The ion beam conveyed by a high-voltage electrode of the existing ion implanter is dispersed and has low ion beam current, so that the ion implanter cannot implant ions into a semiconductor in a short time, and the working efficiency of the ion implanter is low.

SUMMERY OF THE UTILITY MODEL

In order to overcome the above-mentioned deficiencies in the prior art, an object of the present application is to provide an ion implantation electrode and an ion implanter, which can make an ion beam delivered by the ion implantation electrode more concentrated and have a higher beam current.

The utility model discloses an aspect provides an ion implantation electrode, including the connecting plate, be equipped with on the upper surface of connecting plate to keeping away from the bellied cyclic annular ion of direction of connecting plate draws and restraints the mouth, cyclic annular ion draws and restraints the mouth and runs through the connecting plate, the inner ring formation ion motion passageway of cyclic annular ion draw and restraints the mouth.

In a possible embodiment, an area of an orthographic projection of a side of the annular ion beam opening far away from the connecting plate on the upper surface of the connecting plate is smaller than an area of an orthographic projection of a side of the annular ion beam opening near the connecting plate on the upper surface of the connecting plate.

In a possible implementation manner, the ring-shaped ion beam guiding opening is surrounded by at least one retaining wall, the at least one retaining wall includes a first retaining wall, a second retaining wall, a third retaining wall and a fourth retaining wall, the first retaining wall and the second retaining wall are arranged along the length direction of the connecting plate, and the third retaining wall and the fourth retaining wall are arranged along the width direction of the connecting plate.

In a possible embodiment, the distance between the side of the first retaining wall far away from the connecting plate and the side of the second retaining wall far away from the connecting plate along the width direction of the connecting plate is 12.5-16.5mm.

In a possible embodiment, a distance between a side of the first retaining wall away from the connecting plate and a side of the second retaining wall away from the connecting plate along the width direction of the connecting plate is 13mm.

In a possible implementation mode, the connecting plate further comprises at least one ear plate, the ear plate is connected to the connecting plate and extends out of the connecting plate along the width direction of the connecting plate, and a connecting hole is formed in the ear plate.

In one possible embodiment, the connection hole includes a first connection hole close to the ring-shaped ion beam introduction port and a second connection hole far from the ring-shaped ion beam introduction port, the first connection hole has a diameter larger than that of the second connection hole, and the first connection hole communicates with the second connection hole.

In one possible embodiment, the at least one ear plate includes a first ear plate, a second ear plate, a third ear plate, and a fourth ear plate;

the first lug plate and the second lug plate are arranged at one end along the length direction of the connecting plate and are symmetrically arranged relative to the length direction of the connecting plate;

the third lug plate and the fourth lug plate are arranged at the other end along the length direction of the connecting plate and are symmetrically arranged relative to the length direction of the connecting plate;

and a connecting plate fixing position is formed between the first lug plate and the third lug plate and between the second lug plate and the fourth lug plate.

In a possible implementation manner, the first ear plate is close to one side of the fixed position of the connecting plate and between the connecting plates, the second ear plate is close to one side of the fixed position of the connecting plate and between the connecting plates, the third ear plate is close to one side of the fixed position of the connecting plate and between the connecting plates, and the fourth ear plate is close to one side of the fixed position of the connecting plate and between the connecting plates, all provided with a round chamfer.

The present invention provides, in another aspect, an ion implanter, including any one of the foregoing ion implantation electrodes, the ion implantation electrode is configured to implant an ion beam into a processing object.

Compared with the prior art, the method has the following beneficial effects: the ion implantation electrode is provided with the annular ion beam leading port, so that the ion beam emitted from the annular ion beam leading port is gathered by the annular ion beam leading port, the ion beam separated from the annular ion beam leading port is denser, the processed object can receive the set ion implantation amount in a short time, the time consumption of the ion implantation process is shorter, and the working efficiency of the ion implanter is higher.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 is a schematic perspective view of an ion implantation electrode structure provided in the present application;

fig. 2 is a front view of an ion implantation electrode according to the present disclosure;

FIG. 3 isbase:Sub>A cross-sectional view of the ion implantation electrode provided herein, taken along section line A-A shown in FIG. 2;

FIG. 4 is a cross-sectional view of an ion implantation electrode provided herein, taken along section line B-B of FIG. 2;

FIG. 5 is a left side view of the structure of an ion implantation electrode provided herein;

fig. 6 is a top view of the structure of an ion implantation electrode provided in the present application.

Icon: 1-connecting plate, 2-annular ion beam leading port, 21-first retaining wall, 22-second retaining wall, 23-third retaining wall, 24-fourth retaining wall, 3-lug plate, 31-first lug plate, 32-second lug plate, 33-third lug plate, 34-fourth lug plate, 4-connecting hole, 41-first connecting hole and 42-second connecting hole.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, as generally described and illustrated in the figures herein, could be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the present invention are usually placed in when used, and are only for convenience of describing the present application and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present application, it should also be noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and can include, for example, fixed connections, detachable connections, or integral connections; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

The following describes in detail embodiments of the present invention with reference to the accompanying drawings.

In order to solve the technical problems in the prior art, a first aspect of the present application provides an ion implantation electrode, referring to fig. 1 and 3, the ion implantation electrode including a connection plate 1, the connection plate 1 being configured to be fixedly connected to a structure on an ion implanter.

The ion source is characterized in that an annular ion beam guiding opening 2 protruding towards the direction far away from the connecting plate 1 is formed in the upper surface of the connecting plate 1, the annular ion beam guiding opening 2 penetrates through the connecting plate 1, and an inner ring of the annular ion beam guiding opening 2 forms an ion movement channel.

The ion beam enters the annular ion beam port 2 from the lower surface of the connecting plate 1, the ion beam collides with the annular ion beam port 2 in the annular ion beam port 2 to be focused, and the ion beam is separated from the annular ion beam port 2 and then is implanted into a processing object, so that the ion beam emitted from the ion beam port 2 is denser.

In a possible embodiment, an area of an orthographic projection of a side of the annular ion beam guide opening 2 away from the connecting plate 1 on the upper surface of the connecting plate 1 is smaller than an area of an orthographic projection of a side of the annular ion beam guide opening 2 close to the connecting plate 1 on the upper surface of the connecting plate 1.

This embodiment makes the annular ion beam guiding opening 2 have a contracted shape, so that the annular ion beam guiding opening 2 has a better ion beam gathering effect.

In a possible embodiment, referring to fig. 2, fig. 5 and fig. 6, the ring-shaped ion beam guiding opening 2 is defined by at least one retaining wall, the at least one retaining wall includes a first retaining wall 21, a second retaining wall 22, a third retaining wall 23 and a fourth retaining wall 24, the first retaining wall 21 and the second retaining wall 22 are arranged along the length direction of the connecting plate 1, and the third retaining wall 23 and the fourth retaining wall 24 are arranged along the width direction of the connecting plate 1.

Through experiments, referring to fig. 2 and the following table, when the size of the aperture (width L) of the annular ion beam guiding opening 2 defined by the first retaining wall 21, the second retaining wall 22, the third retaining wall 23 and the fourth retaining wall 24 is 12.5-16.5mm, that is, when the distance between the side of the first retaining wall 21 far away from the connecting plate 1 and the side of the second retaining wall 22 far away from the connecting plate 1 along the width direction of the connecting plate 1 is 12.5-16.5mm, the beam current of the ion beam can be maintained at least 470 μ a.

Therefore, the width L of the annular ion beam introduction port 2 is preferably 12.5 to 16.5mm in size.

Serial number	Pore mm	Beam current muA
			1	25.5	380—400
2	23.5	450—480
			3	16.5	460—500
4	13.5	490—510
			5	13	500—530
6	12.5	470—490
			7	11.5	330—400

In a possible embodiment, referring to the above table, when the width L of the annular ion beam guiding opening 2 defined by the first retaining wall 21, the second retaining wall 22, the third retaining wall 23 and the fourth retaining wall 24 is 13mm, that is, when the distance between the side of the first retaining wall 21 away from the connecting plate 1 and the side of the second retaining wall 22 away from the connecting plate 1 along the width direction of the connecting plate 1 is 13mm, the beam current of the ion beam can reach 500-530 μ a, so that the beam current of the ion beam is higher, and more ions can be injected into the processing object in a short time.

In a possible embodiment, referring to fig. 2, in order to facilitate the fixed installation of the connection plate 1, the ion implantation electrode further comprises at least one ear plate 3, the ear plate 3 is connected to the connection plate 1 and extends out of the connection plate 1 along the width direction of the connection plate 1, and the ear plate 3 is provided with a connection hole 4. For example, the connection plate 1 may be fixedly connected to the ion implanter by passing a screw through the connection hole 4.

In a possible embodiment, in order to improve the connection reliability of the ear plate 3, avoid the protrusion of the connecting element from the ear plate 3, ensure the flatness of the connecting element, such as a screw, and the ear plate 3, and improve the overall flatness of the ion implantation electrode after installation. Referring to fig. 4, the connection hole 4 includes a first connection hole 41 close to the ring-shaped ion beam guide port 2 and a second connection hole 42 far from the ring-shaped ion beam guide port 2, the first connection hole 41 has a diameter larger than that of the second connection hole 42, and the first connection hole 41 communicates with the second connection hole 42. Such an embodiment may be such that the head of the screw is sunk into the first connection hole 41 such that the head of the screw is lower than the surface of the ear plate 3 or flush with the surface of the ear plate 3.

In a possible embodiment, with reference to fig. 2, in order to improve the stability of the connection plate 1 after connection to the ion implanter, the at least one ear plate 3 comprises a first ear plate 31, a second ear plate 32, a third ear plate 33 and a fourth ear plate 34;

the first ear plate 31 and the second ear plate 32 are provided at one end in the length direction of the connecting plate 1 and are arranged symmetrically with respect to the length direction of the connecting plate 1;

the third ear plate 33 and the fourth ear plate 34 are arranged at the other end along the length direction of the connecting plate 1 and are symmetrically arranged about the length direction of the connecting plate 1;

a connecting plate fixing position is formed between the first lug plate 31 and the third lug plate 33 and between the second lug plate 32 and the fourth lug plate 34.

The four ear plates of this embodiment can make the connection plate 1 connected with the ion implanter more stable, and the connection plate fixing positions formed between the first ear plate 31 and the third ear plate 33 and between the second ear plate 32 and the fourth ear plate 34 can form a positioning fit with the positioning keys on the ion implanter, so as to limit the displacement of the ion implantation electrode, and make the ion implantation electrode more stable on the ion implanter.

In one possible embodiment, the ion implantation electrode is fixed to the ion implanter in order to facilitate installation of the ion implantation electrode. Referring to fig. 2, round chamfers are arranged between one side of the first ear plate 31 close to the connecting plate fixing position and the connecting plate 1, between one side of the second ear plate 32 close to the connecting plate fixing position and the connecting plate 1, between one side of the third ear plate 33 close to the connecting plate fixing position and the connecting plate 1, and between one side of the fourth ear plate 34 close to the connecting plate fixing position and the connecting plate 1.

In the embodiment, when the connecting plate fixing position is contacted with the positioning key on the ion implanter, the fillet can play a role in guiding, so that the positioning key on the ion implanter can smoothly enter the connecting plate fixing position; moreover, the structure provided by the embodiment is beneficial to preventing the phenomenon of stress concentration at the included angle part between the ear plate 3 and the connecting plate 1.

Another aspect of the present application provides an ion implanter including any one of the foregoing ion implantation electrodes for implanting an ion beam into a processing object.

In summary, the ion implantation electrode is provided with the annular ion beam guide opening, so that the ion beam emitted from the annular ion beam guide opening is collected by the annular ion beam guide opening, and thus the ion beam departing from the annular ion beam guide opening is denser, the processed object can receive the set ion implantation amount in a short time, the ion implantation process is shorter in time consumption, and the working efficiency of the ion implanter is higher.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.

The above description is only for various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and all such changes or substitutions are included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. The ion implantation electrode is characterized by comprising a connecting plate (1), wherein an annular ion beam guiding opening (2) protruding in the direction far away from the connecting plate (1) is formed in the upper surface of the connecting plate (1), the annular ion beam guiding opening (2) penetrates through the connecting plate (1), and an inner ring of the annular ion beam guiding opening (2) forms an ion movement channel.

2. The ion implantation electrode according to claim 1, wherein an area of an orthographic projection of a side of the annular ion beam guide opening (2) remote from the connection plate (1) on the upper surface of the connection plate (1) is smaller than an area of an orthographic projection of a side of the annular ion beam guide opening (2) close to the connection plate (1) on the upper surface of the connection plate (1).

3. The ion implantation electrode according to claim 1, wherein the annular ion beam guide opening (2) is defined by at least one retaining wall, the at least one retaining wall includes a first retaining wall (21), a second retaining wall (22), a third retaining wall (23) and a fourth retaining wall (24), the first retaining wall (21) and the second retaining wall (22) are arranged along a length direction of the connection plate (1), and the third retaining wall (23) and the fourth retaining wall (24) are arranged along a width direction of the connection plate (1).

4. The ion implantation electrode according to claim 3, wherein a distance between a side of the first retaining wall (21) away from the connection plate (1) and a side of the second retaining wall (22) away from the connection plate (1) in a width direction of the connection plate (1) is 12.5 to 16.5mm.

5. The ion implantation electrode according to claim 4, wherein a distance between a side of the first retaining wall (21) away from the connection plate (1) and a side of the second retaining wall (22) away from the connection plate (1) in a width direction of the connection plate (1) is 13mm.

6. The ion implantation electrode according to claim 1, further comprising at least one ear plate (3), wherein the ear plate (3) is connected to the connection plate (1) and extends out of the connection plate (1) along the width direction of the connection plate (1), and the ear plate (3) is provided with a connection hole (4).

7. The ion implantation electrode according to claim 6, wherein the connection hole (4) includes a first connection hole (41) close to the annular ion beam guide port (2) and a second connection hole (42) far from the annular ion beam guide port (2), a diameter of the first connection hole (41) is larger than a diameter of the second connection hole (42), and the first connection hole (41) communicates with the second connection hole (42).

8. The ion implantation electrode according to claim 6, wherein the at least one ear plate (3) comprises a first ear plate (31), a second ear plate (32), a third ear plate (33), and a fourth ear plate (34);

the first ear plate (31) and the second ear plate (32) are arranged at one end in the length direction of the connecting plate (1) and are symmetrically arranged with respect to the length direction of the connecting plate (1);

the third ear plate (33) and the fourth ear plate (34) are provided at the other end in the length direction of the connecting plate (1) and are arranged symmetrically with respect to the length direction of the connecting plate (1);

and a connecting plate fixing position is formed between the first lug plate (31) and the third lug plate (33) and between the second lug plate (32) and the fourth lug plate (34).

9. The ion implantation electrode according to claim 8, wherein rounded chamfers are provided between a side of the first ear plate (31) close to the connection plate fixing position and the connection plate (1), between a side of the second ear plate (32) close to the connection plate fixing position and the connection plate (1), between a side of the third ear plate (33) close to the connection plate fixing position and the connection plate (1), and between a side of the fourth ear plate (34) close to the connection plate fixing position and the connection plate (1).

10. An ion implanter comprising the ion implantation electrode according to any one of claims 1 to 9, the ion implantation electrode being configured to implant an ion beam into a processing object.

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