CN218089883U - Single crystal growing device - Google Patents
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- CN218089883U CN218089883U CN202222491754.4U CN202222491754U CN218089883U CN 218089883 U CN218089883 U CN 218089883U CN 202222491754 U CN202222491754 U CN 202222491754U CN 218089883 U CN218089883 U CN 218089883U
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Abstract
The utility model provides a single crystal growing device relates to silicon carbide crystal growth technical field. The single crystal growing apparatus includes a container body, a draft tube and a lid body. The container main body is internally provided with an accommodating space for accommodating silicon carbide raw materials. The guide cylinder is arranged at the top in the accommodating space and forms a first guide channel and a second guide channel from bottom to top; the inner diameter of the first guide channel is gradually reduced from bottom to top, and the inner diameter of the second guide channel is gradually increased from bottom to top. The cover body is arranged at the top in the second guide channel; seed crystals are arranged on the inner side of the cover body; the diameter of the seed crystal is larger than the minimum inner diameter of the first guide passage and larger than the minimum inner diameter of the second guide passage. The utility model provides a single crystal growing device can improve among the prior art the problem that mixed crystal crackle that carborundum crystal growth edge competition growth formed and stress lead to the microtubule, reaches the purpose that improves the whole quality of crystal and increase the usable diameter of carborundum crystal.
Description
Technical Field
The utility model relates to a carborundum single crystal growth technical field particularly, relates to a single crystal growth device.
Background
Silicon carbide (SiC) is a wide bandgap semiconductor material, and has been widely used in the related fields of high power devices and microwave devices. The Physical Vapor Transport (PVT) method is the mainstream method for growing the silicon carbide substrate single crystal, and the general process is that the silicon carbide substrate single crystal is placed in a wrapped thermal field to a graphite crucible, powder at the bottom of the graphite crucible is in a high-temperature region of the thermal field, and the powder reaches the position of a seed crystal with relatively low temperature in a sublimation mode to be crystallized at the seed crystal to form the silicon carbide single crystal material. In the growth process of the silicon carbide single crystal, the seed crystal provides a stable and continuous growth interface, so that the rising atmosphere can be gradually accumulated at the seed crystal to form the silicon carbide crystal, the defects of the seed crystal can also form continuity succession in the crystal, and the fact that the quality of the crystal is directly determined by the quality of the seed crystal is a common consensus in the industry.
However, in the prior art, in the initial stage of the growth of the silicon carbide crystal on the seed crystal, the growing edge of the silicon carbide has mixed crystal cracks formed by competitive growth and the condition of micropipes caused by stress, thereby influencing the available diameter of the silicon carbide crystal and reducing the quality of the grown silicon carbide crystal.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a single crystal growing device, it can improve the problem that mixed crystal crackle, stress that carbide crystal growth edge competition growth formed lead to the microtubule among the prior art, reaches the purpose that improves the whole quality of crystal and increase the usable diameter of carbide crystal.
The embodiment of the utility model discloses a can realize like this:
an embodiment of the utility model provides a single crystal growth device, include:
a container body provided with an accommodating space therein for accommodating a silicon carbide raw material;
the guide cylinder is arranged above the accommodating space and forms a first guide channel and a second guide channel from bottom to top; the inner diameter of the first guide channel is gradually reduced from bottom to top, and the inner diameter of the second guide channel is gradually increased from bottom to top; and the number of the first and second groups,
the cover body is arranged at the top in the second guide channel; the inner side of the cover body is used for arranging seed crystals; the diameter of the seed crystal is larger than the minimum inner diameter of the first guide channel and larger than the minimum inner diameter of the second guide channel.
Optionally, the inner side of the first guide channel is provided with a first guide surface, and the first guide surface is inclined at an angle of 0-30 ° relative to the inner wall of the accommodating space.
Optionally, a second guide surface is arranged on the inner side of the second guide channel, and the second guide surface is inclined at an angle of 0-30 ° relative to the inner wall of the accommodating space.
Optionally, the length of the first guide channel in the axial direction of the accommodating space is greater than the length of the second guide channel in the axial direction of the accommodating space.
Optionally, a containing groove is formed in the inner wall of the top of the containing space, and the guide cylinder is assembled in the containing groove.
Optionally, the height of the draft tube in the radial direction of the accommodating space is less than or equal to the depth of the accommodating groove in the radial direction of the accommodating space.
Optionally, a gap is formed between the seed crystal and the inner wall of the second guide channel.
Optionally, the gap has a width of 1mm to 10mm.
Optionally, the guide shell is made of at least one material selected from graphite, tantalum, tungsten and niobium.
Optionally, the single crystal growing apparatus further comprises a heat-insulating member; the heat preservation piece is arranged in the middle of the outer side of the cover body.
The utility model provides a single crystal growth device includes for prior art's beneficial effect:
in the single crystal growth device, the silicon carbide raw material is heated and volatilized, the generated silicon carbide atmosphere flows upwards, and when the silicon carbide atmosphere reaches the first guide channel and the second guide channel, the silicon carbide atmosphere is provided with a guide effect through the first guide channel and the second guide channel. The inner diameter of the first guide channel from bottom to top is gradually reduced, and the inner diameter of the second guide channel from bottom to top is gradually increased, so that the guiding effect of gathering and then dispersing is provided for the silicon carbide atmosphere, the silicon carbide atmosphere at the edge position is further reduced, the condition of edge competitive growth of the silicon carbide crystal growing on the seed crystal is weakened, the problems of mixed crystal cracks and stress caused by the edge competitive growth of the silicon carbide crystal in the prior art can be solved, and the aims of improving the integral quality of the crystal and increasing the available diameter of the silicon carbide crystal are fulfilled.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural view of a single crystal growing apparatus provided in an embodiment of the present application;
fig. 2 is an enlarged schematic view of the structure at D in fig. 1.
An icon: 10-a single crystal growing apparatus; 11-silicon carbide feedstock; 100-a container body; 110-a containing space; 111-a receiving groove; 200-a guide shell; 210-a first guide channel; 211 — a first guide surface; 220-a second guide channel; 221-a second guide surface; 300-a cover body; 310-seed crystal; 311-a gap; 320-heat preservation piece; 330-positioning section.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", etc. indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the products of the present invention are used, the description is only for convenience of description and simplification, but the indication or suggestion that the indicated device or element must have a specific position, be constructed and operated in a specific orientation, and thus, should not be interpreted as a limitation of the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are only used to distinguish one description from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1, in the embodiment of the present application, a single crystal growing apparatus 10 is provided, the single crystal growing apparatus 10 is used for providing a growing environment for silicon carbide growth, in other words, a silicon carbide raw material 11 can be placed in the single crystal growing apparatus 10, and the single crystal growing apparatus 10 can realize the growth of a silicon carbide crystal under heating, so as to obtain the silicon carbide crystal.
In the prior art, in the early stage of the growth of the silicon carbide crystal, due to the condition that the edge of the silicon carbide crystal competitively grows, the edge of the silicon carbide crystal has mixed crystal cracks and the defects of micropipes caused by stress, so that the quality of the silicon carbide crystal is influenced, and the available diameter of the silicon carbide crystal is reduced.
In order to improve the above technical problems, in other words, to improve the problems of the prior art that the edge competition growth of the silicon carbide crystal causes the occurrence of mixed crystal cracks and the stress causes micropipes, the single crystal growing apparatus 10 of the present application is provided.
In the present embodiment, the single crystal growth apparatus 10 includes a container body 100, a guide cylinder 200, and a lid 300. The container body 100 has an accommodating space 110 therein for accommodating the silicon carbide raw material 11. The guide cylinder 200 is arranged above the accommodating space 110 and forms a first guide channel 210 and a second guide channel 220 from bottom to top; in other words, the first guide channel 210 and the second guide channel 220 are both located at the top of the accommodating space 110, and the first guide channel 210 is disposed below the second guide channel 220. The inner diameter of the first guide passage 210 is gradually decreased from bottom to top, and the inner diameter of the second guide passage 220 is gradually increased from bottom to top. The cover 300 is disposed at the top of the second guide passage 220; the inner side of the cover 300 is provided with a seed crystal 310, and a silicon carbide crystal can grow on the seed crystal 310.
It should be noted that the minimum inner diameter of the first guide passage 210 is the same as the minimum inner diameter of the second guide passage 220, so that the first guide passage 210 and the second guide passage 220 smoothly transition to prevent a step from being generated to affect the normal function of the guide shell 200. In addition, the minimum inner diameter of the first guide passage 210 should be smaller than the diameter of the seed crystal 310, and similarly, the minimum inner diameter of the second guide passage 220 should be smaller than the diameter of the seed crystal 310; of course, it can also be considered that the minimum inner diameter of the guide shell 200 should be smaller than the diameter of the seed crystal 310; therefore, the protrusion formed at the joint of the first guide channel 210 and the second guide channel 220 can shield the edge position of the seed crystal 310, and the problems of mixed crystal cracks formed by the competitive growth of the growing edge of the silicon carbide crystal and micropipes caused by stress can be solved.
Under the condition that the container main body 100 is heated, the silicon carbide atmosphere in the accommodating space 110 starts to sublimate, the generated silicon carbide atmosphere flows from bottom to top, and in the flowing process of the silicon carbide atmosphere, the silicon carbide atmosphere sequentially passes through the first guide channel 210 and the second guide channel 220 and is condensed on the seed crystal 310, and the growth of silicon carbide crystals is started.
As described above, in the single crystal growth apparatus 10, the silicon carbide raw material 11 is heated to sublimate, and the generated silicon carbide atmosphere flows upward, and when reaching the first guide passage 210 and the second guide passage 220, the silicon carbide atmosphere is provided with a guiding function through the first guide passage 210 and the second guide passage 220. Because the inner diameter of the first guide channel 210 is gradually reduced from bottom to top and the inner diameter of the second guide channel 220 is gradually increased from bottom to top, the guide effect of gathering and then dispersing is provided for the silicon carbide atmosphere, the silicon carbide atmosphere at the edge position is further reduced, the condition of edge competitive growth of the silicon carbide crystal growing on the seed crystal 310 is weakened, the problems of mixed crystal cracks and stress caused by the competitive growth of the growing edge of the silicon carbide crystal in the prior art can be solved, and the purposes of improving the overall quality of the crystal and increasing the available diameter of the silicon carbide crystal are achieved.
It is noted that the minimum inner diameter of the first guide channel 210 should be larger than the diameter of the silicon carbide substrate to be produced; similarly, the minimum inner diameter of the second guide channel 210 should be larger than the diameter of the desired silicon carbide substrate to be produced; of course, it can be considered that the minimum inner diameter of the guide shell 200 should be larger than the diameter of the silicon carbide substrate to be produced. Thereby, it is possible to ensure that the silicon carbide crystal grown on the seed crystal 310 can have a sufficient size to facilitate the silicon carbide substrate required for the cutting.
Optionally, referring to fig. 1 and fig. 2 in combination, in an embodiment of the present application, the first guide channel 210 has a first guide surface 211 inside, and the first guide surface 211 is inclined at an angle of 0 to 30 ° with respect to the inner wall of the accommodating space 110. In other words, the inclination angle of the first guide surface 211 relative to the inner wall of the accommodating space 110 may be 1 °, 2 °, 3 °, 4 °, 5 °, 6 °, 7 °, 8 °, 9 °, 10 °, 11 °, 12 °, 13 °, 14 °, 15 °, 16 °, 17 °, 18 °, 19 °, 20 °, 21 °, 22 °, 23 °, 24 °, 25 °, 26 °, 27 °, 28 °, 29 °, or 30 °.
The top of the first guide surface 211 converges toward the center, so that the first guide surface 211 is integrally enclosed into a frustum shape, and the first guide surface 211 is an outer peripheral curved surface of the frustum-shaped space. The plane where the axis of the accommodating space 110 is located is taken as a cross section, the first guide surface 211 forms two straight lines on the cross section, and the angle of the first guide surface 211 inclined relative to the inner wall of the accommodating space 110 can be regarded as an included angle formed by one of the straight lines and the axis of the accommodating space 110. Additionally, the included angle is labeled as angle a in fig. 2.
It should be noted that the angle of the first guiding surface 211 inclined with respect to the inner wall of the accommodating space 110 may be determined according to the diameter of the seed crystal 310 in practical situations. The minimum inner diameter of the first guide channel 210 is only required to be smaller than the diameter of the seed crystal 310, so that the protruding height of the minimum inner diameter formed by the first guide channel 210 can shade the edge position of the seed crystal 310, and the problem of mixed crystals or crystal polytype of the silicon carbide crystal growing on the seed crystal 310 can be solved.
In addition, in the present embodiment, the second guide channel 220 has a second guide surface 221 inside, and the angle of inclination of the second guide surface 221 with respect to the inner wall of the accommodating space 110 is 0-30 °. In other words, the inclination angle of the second guide surface 221 with respect to the inner wall of the accommodating space 110 may be 1 °, 2 °, 3 °, 4 °, 5 °, 6 °, 7 °, 8 °, 9 °, 10 °, 11 °, 12 °, 13 °, 14 °, 15 °, 16 °, 17 °, 18 °, 19 °, 20 °, 21 °, 22 °, 23 °, 24 °, 25 °, 26 °, 27 °, 28 °, 29 °, or 30 °.
The top of the second guide surface 221 is expanded toward the center, so that the second guide surface 221 is integrally enclosed into a frustum shape, and the second guide surface 221 is an outer peripheral curved surface of the frustum-shaped space. The plane where the axis of the accommodating space 110 is located is taken as a cross section, the second guide surface 221 forms two straight lines on the cross section, and an inclined angle of the second guide surface 221 relative to the inner wall of the accommodating space 110 can be regarded as an included angle formed by one of the straight lines and the axis of the accommodating space 110. Additionally, the included angle is labeled as angle B in FIG. 2.
Similarly, the inclination angle of the second guide surface 221 with respect to the inner wall of the accommodating space 110 may be determined according to the amount of the silicon carbide raw material 11 in the accommodating space 110 and the growth rate of the silicon carbide crystal as a whole in an actual situation.
It should be noted that the inclination angle of the first guiding surface 211 relative to the inner wall of the accommodating space 110 may be different from the inclination angle of the second guiding surface 221 relative to the inner wall of the accommodating space 110, that is, the selection of the inclination angle of the first guiding surface 211 and the selection of the inclination angle of the second guiding surface 221 do not affect each other according to practical situations, and the first guiding surface 211 and the second guiding surface 221 may be independently set. Of course, it should be understood that in other embodiments, the inclination angle of the first guide surface 211 with respect to the inner wall of the accommodating space 110 is the same as the inclination angle of the second guide surface 221 with respect to the inner wall of the accommodating space 110.
In addition, in the present embodiment, the length of the first guide channel 210 in the axial direction of the accommodating space 110 is greater than the length of the second guide channel 220 in the axial direction of the accommodating space 110. Therefore, the flowing time of the silicon carbide atmosphere in the second guide channel 220 can be reduced, and the amount of the silicon carbide atmosphere flowing to the edge of the seed crystal 310 is further reduced, so that the competitive growth of the edge of the silicon carbide crystal can be further weakened, and the problems of mixed crystal cracks and microtubes caused by stress formed by the competitive growth of the growth edge of the silicon carbide crystal can be solved.
In the present embodiment, the inner wall of the top of the accommodating space 110 is provided with an accommodating groove 111, and the guide cylinder 200 is assembled in the accommodating groove 111. The inner wall of the accommodating space 110 is provided with an accommodating groove 111, so that the inner wall of the accommodating space 110 is formed in a step shape. The guide shell 200 is arranged in the accommodating groove 111, so that a limiting effect can be provided for the guide shell 200 through the accommodating groove 111, and the assembly stability of the guide shell 200 is ensured; meanwhile, the guide cylinder 200 can be accommodated in the accommodating groove 111, so that the guide cylinder 200 is prevented from influencing the flow of the silicon carbide atmosphere.
Optionally, the height of the guide shell 200 along the radial direction of the accommodating space 110 is less than or equal to the depth of the accommodating groove 111 along the radial direction of the accommodating space 110. It should be noted that, due to the convergence of the first guide channel 210 and the expansion of the second guide channel 220, a protrusion is formed at a position where the first guide channel 210 and the second guide channel 220 are connected, and the height of the protrusion can be regarded as the height of the guide cylinder 200 along the radial direction of the accommodating space 110. Therefore, the height of the guide cylinder 200 along the radial direction of the accommodating space 110 is smaller than or equal to the depth of the accommodating groove 111 along the radial direction of the accommodating space 110, and it can also be regarded that the protrusion at the middle part of the guide cylinder 200 does not extend out of the accommodating groove 111. Thereby, the diameter of the first guide passage 210 where the inner diameter is smallest is also made larger than the diameter of the substrate in the accommodating space 110, whereby the flow of the silicon carbide atmosphere can be prevented from being affected.
In the present embodiment, in order to prevent defects such as growth cracks caused by the increased local supercooling degree of the edge of the silicon carbide crystal due to the direct contact between the seed crystal and the graphite piece, which leads to the competitive growth of mixed crystals, in the present embodiment, a gap 311 is formed between the seed crystal 310 and the inner wall of the second guide channel 220. In other words, the edge of the seed crystal 310 does not contact the second guide surface 221, and a gap 311 is formed with the second guide surface 221. Optionally, the width of the gap 311 is 1mm-10mm. In other words, the width of the gap 311 may take on the value of 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, or the like.
The width of the gap 311 is set to be 1mm-10mm, so that the problem that the diameter of the seed crystal 310 is too small due to too large gap 311 to influence the growth of the silicon carbide crystal can be prevented, and the problem that the defect of growth cracks and the like caused by the competitive growth of mixed crystals at the edge of the silicon carbide crystal cannot be improved due to too small gap 311 can be prevented.
In the present embodiment, the guide shell 200 is made of at least one material selected from graphite, tantalum, tungsten, and niobium. In other words, the guide shell 200 may be made of one of graphite, tantalum, tungsten, and niobium. Of course, the guide shell 200 may be made of graphite, and then one of tantalum, tungsten and niobium is plated on the outer layer of the guide shell 200 of graphite to form an outer layer. Therefore, the inclusions in the silicon carbide crystal can be reduced, and the quality of the silicon carbide crystal is improved.
In addition, in the present embodiment, the single crystal growing apparatus 10 further includes a heat insulating member 320; the heat insulating member 320 is disposed at the middle portion of the outer side of the cover 300. It should be noted that the thermal insulating member 320 can balance the temperature gradients at the center and the edge of the cover 300 and the seed crystal 310, reduce the growth stress, improve the convexity and thus the quality of the silicon carbide crystal.
In some embodiments, the diameter of the thermal insulation member 320 is smaller than the diameter of the seed crystal 310, so as to ensure that the thermal insulation member 320 effectively balances the temperature gradients at the middle and the edge of the cover 300 and the seed crystal 310, thereby achieving the purposes of reducing the growth stress, improving the convexity of the silicon carbide crystal, and further improving the quality of the silicon carbide crystal. Of course, in other embodiments, the diameter of the thermal insulation member 320 can be set according to actual conditions.
Optionally, in order to improve the assembly stability of the thermal insulation member 320, a positioning portion 330 is convexly provided in the middle of the outer side of the cover 300, and the middle of the thermal insulation member 320 is clamped with the positioning portion 330, so that a positioning effect can be provided for the assembly of the thermal insulation member 320 through the positioning portion 330, and a limiting effect can be provided for the thermal insulation member 320 after the assembly is completed, so as to improve the assembly stability of the thermal insulation member 320. Of course, in other embodiments, the positioning portion 330 may be eliminated, and the assembling stability of the heat insulating member 320 may be improved by bonding or forming a groove.
In summary, the single crystal growth apparatus 10 provided in the embodiments of the present application can provide a guiding effect to the silicon carbide atmosphere through the first guide passage 210 and the second guide passage 220 when the silicon carbide atmosphere reaches the first guide passage 210 and the second guide passage 220. Because the inner diameter of the first guide channel 210 is gradually reduced from bottom to top and the inner diameter of the second guide channel 220 is gradually increased from bottom to top, the guide effect of gathering and then dispersing is provided for the silicon carbide atmosphere, the silicon carbide atmosphere at the edge position is further reduced, the condition of edge competitive growth of the silicon carbide crystal growing on the seed crystal 310 is weakened, the problems of mixed crystal cracks and stress caused by the competitive growth of the growing edge of the silicon carbide crystal in the prior art can be solved, and the purposes of improving the overall quality of the crystal and increasing the available diameter of the silicon carbide crystal are achieved.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A single crystal growing apparatus, comprising:
a container body provided with an accommodating space therein for accommodating a silicon carbide raw material;
the guide cylinder is arranged above the accommodating space and forms a first guide channel and a second guide channel from bottom to top; the inner diameter of the first guide channel is gradually reduced from bottom to top, and the inner diameter of the second guide channel is gradually increased from bottom to top; and the number of the first and second groups,
the cover body is arranged at the top in the second guide channel; the inner side of the cover body is used for arranging seed crystals; the diameter of the seed crystal is larger than the minimum inner diameter of the first guide channel and larger than the minimum inner diameter of the second guide channel.
2. The single crystal growing apparatus of claim 1, wherein the first guide passage has a first guide surface inside thereof inclined at an angle of 0 to 30 ° with respect to an inner wall of the accommodating space.
3. The single crystal growing apparatus of claim 1, wherein the second guide passage has a second guide surface inside, the second guide surface being inclined at an angle of 0 to 30 ° with respect to the inner wall of the accommodating space.
4. The single crystal growing apparatus of claim 1, wherein a length of the first guide channel in an axial direction of the accommodating space is greater than a length of the second guide channel in the axial direction of the accommodating space.
5. A single crystal growing apparatus according to any one of claims 1 to 4, wherein a receiving groove is formed in an inner wall of a top of the receiving space, and the guide cylinder is fitted to the receiving groove.
6. A single crystal growing apparatus according to claim 5, wherein a height of the guide cylinder in a radial direction of the accommodating space is less than or equal to a depth of the accommodating groove in the radial direction of the accommodating space.
7. The single crystal growth apparatus of any one of claims 1-4, wherein a gap is formed between the seed crystal and an inner wall of the second guide channel.
8. A single crystal growing apparatus according to claim 7 wherein the gap is 1mm to 10mm wide.
9. A single crystal growing apparatus according to any one of claims 1 to 4 wherein the draft tube is made of at least one material selected from the group consisting of graphite, tantalum, tungsten and niobium.
10. A single crystal growing apparatus according to any one of claims 1 to 4 further comprising a heat retaining member; the heat preservation piece is arranged in the middle of the outer side of the cover body.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222491754.4U CN218089883U (en) | 2022-09-20 | 2022-09-20 | Single crystal growing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222491754.4U CN218089883U (en) | 2022-09-20 | 2022-09-20 | Single crystal growing device |
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