CN218059299U - High-temperature furnace structure for silicon carbide epitaxial growth - Google Patents
High-temperature furnace structure for silicon carbide epitaxial growth Download PDFInfo
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- CN218059299U CN218059299U CN202222295604.6U CN202222295604U CN218059299U CN 218059299 U CN218059299 U CN 218059299U CN 202222295604 U CN202222295604 U CN 202222295604U CN 218059299 U CN218059299 U CN 218059299U
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- wafer
- silicon carbide
- carousel
- temperature furnace
- turntable
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 229910002804 graphite Inorganic materials 0.000 claims description 22
- 239000010439 graphite Substances 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 57
- 238000000034 method Methods 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of high temperature furnaces, in particular to a high temperature furnace internal structure for silicon carbide epitaxial growth, which comprises a first turntable, wherein a plurality of second turntables are distributed on the top circumference array of the first turntable, a silicon carbide wafer is placed in the second turntable, the top of the second turntable is provided with a top plate, the center of the surface of the top plate is provided with an airflow channel, the airflow channel is just opposite to the second turntable, the bottom of the first turntable is provided with a bottom plate, and the surface of the bottom plate is provided with a vacuumizing channel; the utility model discloses a be provided with first carousel and second carousel in the high temperature furnace, place the carborundum wafer in the second carousel, through the rotation of first carousel earlier, realize the revolution, give the certain rotation basis of wafer, then on this basis, drive the wafer through the second carousel and carry out the rotation to improve the slew velocity of wafer on the whole, the in-process of wafer epitaxial growth can realize a plurality of wafers concurrent operation, and guarantee corresponding rotation rate.
Description
Technical Field
The utility model relates to a high temperature furnace technical field, specifically a structure in high temperature furnace of carborundum epitaxial growth.
Background
The silicon carbide epitaxial process is a very critical process in the whole industry, and since all devices are basically realized on the epitaxy at present, the quality of the epitaxy has a very large influence on the performance of the devices, but the quality of the epitaxy is influenced by the processing of crystals and substrates, is in the middle of the industry, and plays a very critical role in the development of the industry.
The silicon carbide power device is different from the traditional silicon power device in manufacturing process, can not be directly manufactured on a silicon carbide single crystal material, and a high-quality epitaxial material must be additionally grown on a conduction type single crystal substrate, and various devices are manufactured on the epitaxial layer.
The existing silicon carbide epitaxial process is produced by a high-temperature furnace, and the structure of the existing high-temperature furnace is generally divided into two types:
referring to fig. 4, a plurality of sic wafers are placed on the turntable, which can be used for performing an epitaxial process on a plurality of wafers at one time, but when the ultra-thin wafers are faced, especially when the thickness is below 200 μm, if the rotation speed of the turntable is too high, the wafers are squeezed in the turntable to generate a large stress, so that the wafers warp, even break, and waste materials, and if the rotation speed is too low, the growth quality and efficiency of the epitaxial growth on the wafer surface are affected, which is not beneficial to production;
as shown in fig. 5, only one sic wafer is placed on the turntable, and then the rotation of the turntable is utilized to form the rotation of the wafer, so that although the stress on the wafer can be reduced, the rotation speed can be increased compared to the former one, but the increased rotation speed is still limited, the wafer is still squeezed, and once the speed exceeds a threshold value, the wafer is also at risk of warping or cracking, and meanwhile, only one wafer can be placed on one turntable at a time, which may cause low efficiency and affect the overall production progress.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a structure in silicon carbide epitaxial growth's high temperature furnace to solve the problem that proposes among the above-mentioned background art.
The purpose of the utility model can be realized by the following technical scheme:
the utility model provides a structure in high temperature furnace of carborundum epitaxial growth, includes first carousel, the top circumference array distribution of first carousel has a plurality of second carousels, has placed a carborundum wafer in the second carousel, and the top of second carousel is provided with the roof, and the surperficial center department of roof is provided with airflow channel, and airflow channel just to the second carousel, and the bottom of first carousel is provided with the bottom plate, and the surface of bottom plate is provided with the evacuation passageway.
Furthermore, a first rotating shaft is arranged at the center of the bottom of the first rotating disc, a fixing frame is arranged at the bottom of the first rotating shaft, the fixing frame is fixed on the inner side wall of the high-temperature furnace, and the first rotating disc is rotationally connected with the fixing frame through the first rotating shaft.
Furthermore, a second rotating shaft is arranged at the bottom of the second rotating disc, and the second rotating disc is connected with the first rotating disc in a rotating mode through the second rotating shaft.
Further, a graphite carrier plate is arranged at the bottom of the silicon carbide wafer, and the silicon carbide wafer is fixed on the surface of the graphite carrier plate.
Further, the silicon carbide wafer is fixed on the surface of the graphite carrier plate by adopting a carbon deposition reaction.
Furthermore, the surface of the second turntable is provided with a groove, the size of the groove is the same as that of the graphite carrier plate, and the groove is used for placing the graphite carrier plate.
The utility model has the advantages that:
1. the utility model discloses a be provided with first carousel and second carousel in the high temperature furnace, place the carborundum wafer in the second carousel, through the rotation of first carousel earlier, realize the revolution, give the certain rotation basis of wafer, then on this basis, drive the wafer through the second carousel and carry out the rotation, thereby improve the slew velocity of wafer on the whole, in the process of wafer epitaxial growth, can realize a plurality of wafers and operate simultaneously, and guarantee corresponding rotation rate;
2. the utility model fixes the wafer on the graphite support plate by adopting the carbon deposition reaction, and can fix the wafer, and then places the graphite support plate on the second turntable, thus avoiding the wafer from being extruded when rotating, reducing the stress of the wafer and avoiding the wafer from being damaged when rotating at high speed;
3. the utility model discloses when letting in reaction gas, carry out the evacuation to it, because in epitaxial growth, still can have some accessory substances, like nitrogen gas and trimethylaluminium, and the temperature in the high temperature furnace is very high, so trimethylaluminium also presents with the gaseous state, and these accessory substances save easily on the surface of carborundum wafer again, influence epitaxial growth, through the evacuation, then can take away the accessory substance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts;
FIG. 1 is a schematic view of the structure inside the furnace of the present invention;
FIG. 2 is a sectional view of the structure inside the furnace of the present invention;
fig. 3 is a schematic view of the connection between the second rotary table and the first rotary table;
FIG. 4 is a schematic view of a high temperature furnace according to the prior art;
FIG. 5 is a schematic view of another high temperature furnace mechanism in the prior art.
The reference numbers in the figures are as follows:
1. a first turntable; 11. a first rotating shaft; 2. a second turntable; 21. a second rotating shaft; 22. a groove; 3. a silicon carbide wafer; 31. a graphite carrier plate; 4. a fixed mount; 5. a top plate; 6. an air flow channel; 7. a base plate; 8. and (6) vacuumizing the channel.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, a high temperature furnace structure for epitaxial growth of silicon carbide comprises a first turntable 1, a plurality of second turntables 2 are distributed on the top circumference of the first turntable 1 in an array manner, a silicon carbide wafer 3 is placed in the second turntables 2, when the first turntable 1 rotates, a revolution is formed relative to the wafer, and on the basis of the revolution, the wafer is driven to rotate through the second turntable 2, so that the stress of the wafer is reduced, and the rotation speed is ensured, a top plate 5 is arranged on the top of the second turntable 2, an airflow channel 6 is arranged at the center of the surface of the top plate 5, the airflow channel 6 is opposite to the second turntable 2, reaction gas is introduced into the high temperature furnace through the airflow channel 6, and due to the temperature in the reaction furnace, when the reaction gas touches the wafer, a reaction occurs, so as to form an epitaxial layer, a bottom plate 7 is arranged at the bottom of the first turntable 1, a vacuumizing channel 8 is arranged on the surface of the bottom plate 7, and other byproducts, such as nitrogen and trimethylaluminum, can be discharged outwards through the vacuumizing channel 8.
Wherein the wafer transmission mode is automatic transmission by a manipulator;
the heating mode is medium-frequency induction heating;
the highest temperature of the high-temperature furnace 5 is 1700 ℃;
the temperature control precision is +/-0.1 ℃ (1400-1700 ℃);
the pressure control range of the reaction chamber is 50-1000 mbar;
the pressure control precision of the reaction chamber is less than or equal to +/-0.1 mbar;
the reaction gas comprises C 2 H 4 /C 3 H 8 、SiHCl 3 、HCl。
Referring to fig. 2, a first rotating shaft 11 is disposed at the center of the bottom of the first rotating disk 1, a fixing frame 4 is disposed at the bottom of the first rotating shaft 11, the fixing frame 4 is fixed on the inner side wall of the high temperature furnace, and the first rotating disk 1 is rotatably connected to the fixing frame 4 through the first rotating shaft 11, and forms a revolution through the first rotating disk 1 to provide a revolution basis for the wafer.
The bottom of the second rotary table 2 is provided with a second rotary shaft 21, the second rotary table 2 is rotatably connected with the first rotary table 1 through the second rotary shaft 21, the second rotary table 2 can drive the wafer to rotate, and the wafer rotates on the basis of revolution, so that the rotation speed of the wafer is improved.
A graphite carrier plate 31 is arranged at the bottom of the silicon carbide wafer 3, and the silicon carbide wafer 3 is fixed on the surface of the graphite carrier plate 31; the silicon carbide wafer 3 is fixed on the surface of the graphite carrier plate 31 by a carbon deposition reaction.
The surface of the second turntable 2 is provided with a groove 22, the size of the groove 22 is the same as that of the graphite carrier plate 31, and the groove 22 is used for placing the graphite carrier plate 31; the wafer is firstly fixed on the graphite carrier plate 31, and then the graphite carrier plate 31 is placed on the second turntable 2, so that the stress on the wafer can be reduced, and the wafer can be prevented from being damaged.
The utility model discloses a theory of operation: firstly, through carbon deposition reaction, the silicon carbide wafer 3 is fixed on the graphite support plate 31, then the graphite support plate 31 is placed in the groove 22 on the surface of the second turntable 2, the reaction furnace is started, the first turntable 1 rotates to form revolution relative to the wafer, then the second turntable 2 rotates to drive the wafer to rotate, so that the rotating speed of the wafer is improved, then reaction gas is introduced through the gas flow channel 6, the reaction gas reacts at the moment of contacting the wafer to form epitaxy and other gaseous byproducts, the gaseous byproducts are discharged outwards through vacuumizing, and the stability of epitaxy formation is ensured.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention.
Claims (6)
1. The utility model provides a structure in high temperature furnace of carborundum epitaxial growth, includes first carousel (1), its characterized in that, the top circumference array distribution of first carousel (1) has a plurality of second carousel (2), has placed a carborundum wafer (3) in second carousel (2), and the top of second carousel (2) is provided with roof (5), and the surperficial center department of roof (5) is provided with air current channel (6), and air current channel (6) just to second carousel (2), and the bottom of first carousel (1) is provided with bottom plate (7), and the surface of bottom plate (7) is provided with evacuation passageway (8).
2. The high-temperature furnace structure for silicon carbide epitaxial growth according to claim 1, wherein a first rotating shaft (11) is arranged at the bottom center of the first rotating disc (1), a fixing frame (4) is arranged at the bottom of the first rotating shaft (11), the fixing frame (4) is fixed on the inner side wall of the high-temperature furnace, and the first rotating disc (1) is rotatably connected with the fixing frame (4) through the first rotating shaft (11).
3. A high temperature furnace structure for epitaxial growth of silicon carbide according to claim 1, characterized in that the bottom of the second rotary table (2) is provided with a second rotary shaft (21), and the second rotary table (2) is rotatably connected with the first rotary table (1) through the second rotary shaft (21).
4. A high temperature furnace structure for epitaxial growth of silicon carbide according to claim 1, characterized in that a graphite support plate (31) is provided at the bottom of the silicon carbide wafer (3), and the silicon carbide wafer (3) is fixed on the surface of the graphite support plate (31).
5. A high temperature furnace structure for epitaxial growth of silicon carbide according to claim 4, characterized in that the silicon carbide wafer (3) is fixed to the surface of the graphite carrier plate (31) by a carbon deposition reaction.
6. A high-temperature furnace structure for epitaxial growth of silicon carbide according to claim 4, characterized in that the surface of the second turntable (2) is provided with grooves (22), the dimensions of the grooves (22) are the same as those of the graphite carrier plate (31), and the grooves (22) are used for placing the graphite carrier plate (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222295604.6U CN218059299U (en) | 2022-08-30 | 2022-08-30 | High-temperature furnace structure for silicon carbide epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222295604.6U CN218059299U (en) | 2022-08-30 | 2022-08-30 | High-temperature furnace structure for silicon carbide epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218059299U true CN218059299U (en) | 2022-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222295604.6U Active CN218059299U (en) | 2022-08-30 | 2022-08-30 | High-temperature furnace structure for silicon carbide epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218059299U (en) |
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2022
- 2022-08-30 CN CN202222295604.6U patent/CN218059299U/en active Active
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