CN218059198U - Plasma enhanced chemical vapor deposition equipment - Google Patents
Plasma enhanced chemical vapor deposition equipment Download PDFInfo
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- CN218059198U CN218059198U CN202220846021.5U CN202220846021U CN218059198U CN 218059198 U CN218059198 U CN 218059198U CN 202220846021 U CN202220846021 U CN 202220846021U CN 218059198 U CN218059198 U CN 218059198U
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Abstract
The utility model discloses a plasma enhanced chemical vapor deposition device, which relates to the technical field of semiconductor film preparation, and comprises a reaction chamber, a controllable heating module, a muffle, a wafer boat and a gas conveying pipeline, wherein the controllable heating module is used for controlling the reaction temperature in the reaction chamber; the gas conveying pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is also connected with a vacuum pump through an air exhaust pipeline; the utility model provides a plasma reinforcing chemical vapor deposition equipment has the high characteristic of thermal field homogeneity and reaction gas active ingredient homogeneity, and the product uniformity is good. In addition, the radio frequency electrode for generating plasma is three-phase, so that secondary phase shift is avoided, and extra punitive electric charge is not required to be paid. The equipment has high production efficiency, low cost and high product cost performance.
Description
Technical Field
The utility model relates to a semiconductor film preparation technical field especially relates to a plasma reinforcing chemical vapor deposition equipment.
Background
Chemical Vapor Deposition (CVD) equipment may be used to produce one or more layers of i-type, n-type, p-type polycrystalline or single crystal films on the surface of silicon wafer substrates, silicon carbide substrates, and the like. Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques promote the growth of thin films by generating reactive radicals from process gases by plasma discharge. The Plasma Enhanced Chemical Vapor Deposition (PECVD) technology can obviously reduce the reaction temperature of film making, so that certain Chemical Vapor Deposition (CVD) film making reaction which needs to be carried out at high temperature can be carried out at lower temperature. Chemical Vapor Deposition (CVD) equipment is generally operated at a pressure of 10 to 300Pa absolute and a temperature of 350 to 700 deg.C, and the reaction gas used generally comprises SiH 4 (for i-type poly), siH 4 /PH 3 (for n-type polycrystals), SH 4 /BCl 3 Or SiH 4 /B 2 H 6 (for p-type poly), siCl 4 /NH 3 ，SiHCl 3 /NH 3 ，SiHCl 2 /NH 3 ，SiH 4 /HCl，CH 4 HCl, etc. Chemical Vapor Deposition (CVD) chamber thermal fields are generally required to meet high temperature uniformity. The process gas undergoes chemical reaction on the surface of the substrate in the reaction chamber and is gradually consumed, and byproducts are generated and flow and diffuse along with the direction of the gas flow, so that the composition of effective plasma on the surface of the substrate is changed along with the by-product, and the uniformity problem of the generated film is caused. In order to solve the problems of uniformity and consistency of the product, particularly when a thicker film is prepared, a method of increasing the flow of the reaction gas is often adopted, so that a large amount of process gas is wastedAnd (4) charging. In particular, the purity of the process gas required for the Chemical Vapor Deposition (CVD) reaction is above 99.999%, the price is extremely high, and the cost of the final product is too high due to the large amount of wasted process gas. In addition, the plasma is typically generated by two radio frequency electrodes. Therefore, when three-phase alternating current power supply is used, secondary phase shift (parasitic phase shift) is generated, and the influence is generated on the power supply stability of the power grid. In western countries in particular, the electricity consumption unit often pays a high punitive electricity fee to compensate for the influence of the secondary phase shift on the power grid. Therefore, the uniformity of the flow field reaction gas and the temperature in the reaction chamber of the Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment is improved, the utilization efficiency of the reaction gas is improved, the influence of secondary phase shift on a power grid is reduced, the production cost is reduced, and the improvement of the product cost performance is of great industrial and commercial significance.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a plasma reinforcing chemical vapor deposition equipment to solve the problem that above-mentioned prior art exists, it is high to have the temperature field temperature homogeneity of reaction chamber, and the process gas high-usage can not produce secondary phase displacement and produce the advantage that negative effects produced the power supply network.
In order to achieve the above purpose, the utility model provides a following scheme:
the utility model provides a plasma enhanced chemical vapor deposition equipment, including reaction chamber, controllable heating module, muffle, wafer boat and gas transmission pipeline, the head and tail end of reaction chamber are reaction chamber head end and reaction chamber tail end respectively, controllable heating module is used for controlling the reaction temperature of reaction chamber inside, the muffle sets up in the reaction chamber, the inboard of muffle is the even hot area, the wafer boat set up in the even hot area, the wafer boat includes the graphite boat piece of a plurality of connection electrodes, place the wafer substrate on the boat piece; the gas transmission pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is also connected with a vacuum pump through an air exhaust pipeline.
Preferably, the reaction chamber is vertical or horizontal.
Preferably, a plurality of controllable heating modules are arranged in the reaction chamber, the controllable heating modules are distributed on the inner wall of the reaction chamber, each controllable heating module is provided with an independent thermocouple for temperature detection, and power control can be automatically performed through a programming logic controller.
Preferably, the muffle is made of a high-temperature-resistant and chemical-resistant metal material, the length of the muffle exceeds the total length of the wafer boat, and the length of the muffle exceeding the wafer boat is at least 1.74 times the diameter of the muffle.
Preferably, the gas transmission pipeline comprises a main reaction gas pipeline and a reaction gas transmission pipeline, the main reaction gas pipeline is divided into a plurality of reaction gas transmission pipelines before reaching the head end of the reaction chamber, the reaction gas transmission pipelines pass through the head end of the reaction chamber and enter the reaction chamber, a gap between the controllable heating module and the muffle extends to the tail end of the reaction chamber, and after 180-degree turning, the gas transmission pipelines enter a uniform hot area on the inner side of the muffle and then continue to extend to the head end of the reaction chamber along the axial direction.
Preferably, a plurality of gas outlet holes are axially distributed on one side of the reaction gas conveying pipeline facing the crystal boat.
Preferably, the wafer boat is composed of a plurality of groups of boat piece modules which are sequentially arranged in the axial direction, each group of boat piece modules is composed of three boat pieces, the boat pieces are boat piece I, boat piece II and boat piece III from the tail end to the head end, the boat piece I of each boat piece module is connected to the same electrode I, the boat piece II of each boat piece module is connected to the same electrode II, and the boat piece III of each boat piece module is connected to the same electrode III.
Preferably, the boat is arranged in a boat hanger, and the top of the boat hanger is connected with the head end of the reaction chamber.
Preferably, the pumping pipeline is arranged at the tail end of the reaction chamber.
The utility model discloses for prior art gain following beneficial technological effect:
the utility model provides a plasma reinforcing chemical vapor deposition equipment improves the thermal field temperature homogeneity of plasma chemical vapor deposition equipment reaction zone through the installation muffle. Reaction gas is preheated between the muffle and the heating module through a conveying pipeline, so that interference on an even thermal field is avoided. The heated reaction gas is uniformly injected into the whole area of the reaction area, thereby improving the uniformity of the effective gas and the plasma in the reaction area. The higher uniformity of the thermal field and distribution of the reactant gas and plasma ensures higher consistency of the final product. The crystal boat is powered by a three-phase electrode, so that secondary phase shift can be avoided, and extra punitive electric charge is avoided from being paid. Therefore, the device can ensure higher cost performance of the final product.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a plasma enhanced chemical vapor deposition apparatus according to the present invention;
FIG. 2 is a schematic view of the connection of the electrodes of the boat in the present invention.
In the figure: 100-the head end of a reaction chamber, 200-the tail end of the reaction chamber, 300-the reaction chamber, 400-a controllable heating module, 500-a muffle, 600-a reaction gas conveying pipeline, 700-a wafer boat, 701-a wafer first, 702-a wafer second, 703-a wafer third, 800-a wafer boat hanger, 801-an electrode first, 802-an electrode second, 803-an electrode third, 900-a main reaction gas pipeline and 901-an air extraction pipeline.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
The utility model aims at providing a plasma enhanced chemical vapor deposition equipment to solve the problem that prior art exists.
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
The plasma enhanced chemical vapor deposition apparatus in this embodiment, as shown in fig. 1, includes a reaction chamber 300, a controllable heating module 400, a muffle 500, a wafer boat 700, and a gas delivery pipeline, where the head and tail ends of the reaction chamber 300 are a reaction chamber head end 100 and a reaction chamber tail end 200, respectively, the controllable heating module 400 is used to control the reaction temperature inside the reaction chamber 300, the muffle 500 is disposed in the reaction chamber 300, the inner side of the muffle 500 is a uniform hot zone, the wafer boat 700 is disposed in the uniform hot zone, the wafer boat 700 includes a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas delivery pipe is used to inject a reaction gas into the reaction chamber 300, and the reaction chamber 300 is further connected to a vacuum pump through an exhaust pipe 901.
In this embodiment, the reaction chamber 300 is vertical or horizontal.
In this embodiment, a plurality of controllable heating modules 400 are disposed in the reaction chamber 300, the controllable heating modules 400 are distributed on the inner wall of the reaction chamber 300, each controllable heating module 400 has an independent thermocouple for temperature detection, and can automatically perform power control through a programmed logic controller. The number of controllable heating modules can be expanded according to the production requirements of a single device. In practice, the length of the reaction chamber, and the number of heating modules, are determined according to the throughput requirements of the individual apparatus. To improve the production efficiency, it is possible to increase the length of the reaction chamber and the number of heating modules.
In this embodiment, the muffle 500 is made of a high temperature and chemical resistant metal material (e.g., stainless steel 316l,310l,310s, duplex stainless steel Duplex 2205, hastelloy, tungsten molybdenum alloy, etc., depending on the type of reactant gas), the length of the muffle 500 exceeds the total length of the boat 700, and the length of the muffle 500 exceeds the length of the boat 700 by at least 1.74 times the diameter of the muffle 500 (both ends extending beyond the diameter of at least 0.87 muffle 500 per boat 700).
In this embodiment, the gas transmission pipeline includes a main reaction gas pipeline 900 and a reaction gas transmission pipeline 600, the main reaction gas pipeline 900 is divided into a plurality of reaction gas transmission pipelines 600 before reaching the first end 100 of the reaction chamber, the reaction gas transmission pipeline 600 enters the reaction chamber 300 through the first end 100 of the reaction chamber, the reaction gas transmission pipeline 600 extends to the tail end 200 of the reaction chamber in the gap between the controllable heating module 400 and the muffle 500, and after being turned by 180 degrees, enters a uniform hot zone inside the muffle 500, and then continues to extend to the first end 100 of the reaction chamber in the axial direction; a plurality of gas outlets are axially distributed on one side of the reaction gas conveying pipeline 600 facing the boat 700, and the reaction gas is uniformly conveyed to the whole area where the boat 700 is located through the plurality of fine gas outlets. The number of gas delivery lines and the number of gas injection ports determine the uniformity of the gas and plasma in the reaction zone. Due to the "scalability" of the device itself, the number of gas delivery lines and injection ports should also be relatively scalable.
In the embodiment, the boat 700 is disposed in a boat rack 800, and the top of the boat rack 800 is connected to the head end 100 of the reaction chamber; as shown in fig. 2, the wafer boat 700 is composed of a plurality of sets of boat piece modules arranged in an axial direction, each set of boat piece modules is composed of three boat pieces, the three boat pieces are boat piece one 701, boat piece two 702 and boat piece three 703 from the tail end to the head end, the boat piece one 701 of each boat piece module is connected to the same electrode one 801, the boat piece two 702 of each boat piece module is connected to the same electrode two 802, and the boat piece three 703 of each boat piece module is connected to the same electrode three 803. The first electrode 801, the second electrode 802 and the third electrode 803 are respectively powered by three phases of a three-phase radio frequency generator. The three electrodes enter the interior of the reaction chamber 300 from the rear of the reaction chamber 300, respectively.
In this embodiment, the pumping duct 901 is disposed at the end 200 of the chamber.
The working principle is as follows:
after the boat 700 is placed in the reaction region, the first end 100 of the reaction chamber is sealed, the vacuum pump is started to evacuate the reaction chamber 300, and then nitrogen or inert gas is injected for cleaning. Multiple cycles of "evacuation-inert gas injection" may be performed to achieve the process requirements for the gas purity in the reaction chamber 300. By controlling the heating module 400, the temperature of the reaction zone is allowed to reach the temperature required by the reaction according to a specified temperature rise curve, and the temperature uniformity of the thermal field is ensured to meet the process requirements, such as less than +/-0.5 ℃. Then, through the reaction gas input pipe 600, the reaction gas is injected into the reaction chamber 300, and simultaneously, the radio frequency electrode I801, the electrode II 802 and the electrode III 803 which are connected with the wafer boat 700 consisting of graphite boat sheets are electrified, so that a high frequency alternating electric field is formed near the boat sheets, the high temperature gas is ionized into plasma, the plasma enhanced chemical deposition reaction (PECVD) is activated, and the thin film on the wafer substrate starts to grow. During the growth of the film, the type and flow rate of the reaction gas can be controlled by the atmosphere panel, so that one or more layers of films with different properties can be grown. After the film is increased to the required thickness, the electrodes are stopped to be electrified, the reaction gas is stopped to be injected, the vacuum pumping is performed, then the nitrogen or the inert gas is injected, the heating module 400 is controlled, and the reaction chamber is returned to the specified temperature according to the specified cooling curve. The chamber head end 100 may then be unsealed and the boat 700 may be removed.
Through the above description, it can be found that when the Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment is used, the thin film deposition process of the same batch of wafer substrates can be completed under the condition of extremely high temperature uniformity of the thermal field, and the usage amount of the reaction gas can be effectively reduced under the requirement of ensuring the consistency and uniformity of the thin film deposited on the surface of each wafer substrate. In addition, by using three-phase alternating current to supply the radio frequency electrode, secondary phase shift can be avoided, so that high punitive electric charge does not need to be paid additionally. In conclusion, the equipment can be used for producing high-cost performance Plasma Enhanced Chemical Vapor Deposition (PECVD) film products.
The utility model discloses a specific embodiment is applied to explain the principle and the implementation mode of the utility model, and the explanation of the above embodiment is only used to help understand the method and the core idea of the utility model; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present description should not be construed as a limitation of the present invention.
Claims (9)
1. A plasma enhanced chemical vapor deposition apparatus, characterized by: the reactor comprises a reaction chamber, a controllable heating module, a muffle, a wafer boat and a gas conveying pipeline, wherein the head end and the tail end of the reaction chamber are respectively the head end and the tail end of the reaction chamber, the controllable heating module is used for controlling the reaction temperature in the reaction chamber, the muffle is arranged in the reaction chamber, the inner side of the muffle is a uniform hot area, the wafer boat is arranged in the uniform hot area, the wafer boat comprises a plurality of graphite boat sheets connected with electrodes, and a wafer substrate is placed on the boat sheets; the gas transmission pipeline is used for injecting reaction gas into the reaction chamber, and the reaction chamber is also connected with a vacuum pump through an air exhaust pipeline.
2. The plasma enhanced chemical vapor deposition apparatus according to claim 1, wherein: the reaction chamber is vertical or horizontal.
3. The plasma enhanced chemical vapor deposition apparatus according to claim 1, wherein: the controllable heating modules are arranged in the reaction chamber, distributed on the inner wall of the reaction chamber, provided with independent thermocouples for temperature detection, and capable of automatically controlling power through a programming logic controller.
4. The plasma enhanced chemical vapor deposition apparatus of claim 1, wherein: the muffle is made of a high-temperature-resistant and chemical-resistant metal material, the length of the muffle exceeds the total length of the boat, and the length of the muffle exceeding the boat is at least 1.74 times that of the muffle and is long in diameter.
5. The plasma enhanced chemical vapor deposition apparatus according to claim 1, wherein: the gas transmission pipeline comprises a main reaction gas pipeline and a reaction gas transmission pipeline, the main reaction gas pipeline is divided into a plurality of reaction gas transmission pipelines before the head end of the reaction chamber, the reaction gas transmission pipelines pass through the head end of the reaction chamber and enter the reaction chamber, the gas transmission pipeline is arranged between the controllable heating module and a gap between the muffle to extend to the tail end of the reaction chamber, and after 180-degree turning, the gas transmission pipeline enters an even hot area at the inner side of the muffle and then continues to extend to the head end of the reaction chamber along the axial direction.
6. The plasma enhanced chemical vapor deposition apparatus according to claim 5, wherein: and a plurality of air outlet holes are axially distributed on one side of the reaction gas conveying pipeline facing the crystal boat.
7. The plasma enhanced chemical vapor deposition apparatus according to claim 1, wherein: the wafer boat is composed of a plurality of groups of boat piece modules which are sequentially arranged in the axial direction, each group of boat piece modules is composed of three boat pieces, the three boat pieces are a first boat piece, a second boat piece and a third boat piece from the tail end to the head end in sequence, the first boat piece of each boat piece module is connected to the same electrode I, the second boat piece of each boat piece module is connected to the same electrode II, and the third boat piece of each boat piece module is connected to the same electrode III.
8. The plasma enhanced chemical vapor deposition apparatus according to claim 1, wherein: the wafer boat is arranged in a wafer boat hanging rack, and the top of the wafer boat hanging rack is connected with the head end of the reaction chamber.
9. The plasma enhanced chemical vapor deposition apparatus of claim 1, wherein: the air pumping pipeline is arranged at the tail end of the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220846021.5U CN218059198U (en) | 2022-04-13 | 2022-04-13 | Plasma enhanced chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220846021.5U CN218059198U (en) | 2022-04-13 | 2022-04-13 | Plasma enhanced chemical vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN218059198U true CN218059198U (en) | 2022-12-16 |
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| CN202220846021.5U Active CN218059198U (en) | 2022-04-13 | 2022-04-13 | Plasma enhanced chemical vapor deposition equipment |
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| CN (1) | CN218059198U (en) |
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- 2022-04-13 CN CN202220846021.5U patent/CN218059198U/en active Active
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