CN215161049U - Preparation device of zone-melting-level polycrystalline silicon material - Google Patents
Preparation device of zone-melting-level polycrystalline silicon material Download PDFInfo
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- CN215161049U CN215161049U CN202120378030.1U CN202120378030U CN215161049U CN 215161049 U CN215161049 U CN 215161049U CN 202120378030 U CN202120378030 U CN 202120378030U CN 215161049 U CN215161049 U CN 215161049U
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Abstract
The utility model provides a preparation device of zone-melting-level polysilicon material, which comprises a chassis; the furnace body is arranged on the chassis, and the furnace body and the chassis enclose a furnace chamber; the silicon core is arranged in the furnace cavity and is used as a substrate for chemical vapor deposition; the main heating power supply is communicated with the silicon core circuit to supply power to the silicon core; the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material; and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core. The pollution caused by other external equipment can be reduced, and the thermal stress of the silicon rod can be effectively controlled.
Description
Technical Field
The utility model relates to a preparation facilities of polycrystalline silicon material especially relates to a preparation facilities of zone-melting level polycrystalline silicon material.
Background
The zone melting level silicon chip is a high-end product of an electronic level silicon material, is a key material of an electronic power device, comprises a common thyristor (SCR), a power transistor (GTR), a turn-off thyristor (GTO), a power field effect transistor (MOSFET), an Insulated Gate Bipolar Transistor (IGBT), a Power Integrated Circuit (PIC) and the like, and is widely applied to power systems and electrical engineering of high-voltage direct-current transmission, static reactive compensation, electric locomotive traction, alternating-current and direct-current power transmission, electrolysis, excitation, electric heating, high-performance alternating-current and direct-current power supplies and the like.
Compared with the Czochralski method (CZ), the produced monocrystalline silicon has high purity, less oxygen, low carbon content, low resistivity and long service life, and the Float Zone (FZ) semiconductor monocrystalline silicon has high purity grade of more than 12 and 9. However, because the single crystal technology of the zone melting method does not adopt crucible massive polycrystalline silicon materials, but directly adopts polycrystalline rod materials to float and pull crystal, compared with the massive products of general electronic grade polycrystalline silicon, the single crystal technology of the zone melting method puts higher requirements on the internal stress, the microscopic morphology and the like of the polycrystalline silicon rod for zone melting.
Since the key production technology of zone-melting-grade polycrystalline silicon is blocked abroad, no related enterprise can independently carry out large-size zone-melting single crystal high-quality batch production in China. The production of zone-melting grade polysilicon is still in the certification stage. With the continuous upgrading of downstream consumption requirements, the requirements of zone-melting-grade silicon materials are gradually increased, and the domestic high-quality electronic-grade silicon materials are urgently required to be developed to a high-end level.
The polysilicon raw material for zone melting is mostly produced by adopting an improved Siemens method, a mixture of chlorosilane and hydrogen is introduced into a CVD reduction furnace, and chemical vapor deposition reaction is utilized to carry out deposition growth on a silicon core which is placed in advance, because the silicon rod is electrified to maintain high temperature in the growth process, the surface can reach 1000-1100 ℃, and the inside can even reach more than 1300 ℃, and meanwhile, because the reactor adopts annular multi-ring arrangement, the silicon rods at the inner ring and the outer ring have larger temperature difference due to a thermal field, so that the thermal stress generated in the silicon rod growth is inevitable. The silicon rod with large thermal stress or hidden cracks is easy to explode in the subsequent machining process, or the silicon rod is locally heated by the zone-melting coil to induce explosion in the single crystal drawing process, so that the safe operation of equipment is damaged, and the condition of explosion is generated. Meanwhile, the resistance heating breakdown of the high-purity zone-melting-level bar material in the growing process is realized, the higher the silicon core resistance is, and the breakdown by adopting common voltage at normal temperature is difficult. In the production of the existing process, a silicon core is heated by applying a 12V high-voltage power supply to electrodes at two ends of the silicon core to change the resistance of the silicon to break down the silicon core in a short time and then switching to a low-voltage power supply to maintain the temperature; in another process, an auxiliary heat source mode is adopted, an infrared halogen lamp tube is inserted or a graphite heating rod is used for preheating, the resistivity of the high-purity silicon core at normal temperature is reduced to be about 500 ℃, and then the high-purity silicon core is broken down. The high-voltage breakdown mode is often applied to the growth of a large solar-grade polysilicon furnace, the starting period is long, and the risk of switching voltage is high; the auxiliary heating mode of infrared preheating and graphite resistance preheating needs to introduce a heat source into the furnace body, so that the heating time is long, the efficiency is low, and a new pollution source is introduced to influence the purity of the product.
Therefore, the existing means for preparing the polysilicon for zone melting still needs to be improved, and on one hand, the pollution caused by external devices and systems needs to be reduced, and the purity of the silicon rod is influenced; on the one hand, the thermal stress of the silicon rod needs to be controlled by growth.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned not enough of present preparation facilities of zone-melting level polycrystalline silicon material existence, the utility model provides a preparation facilities of zone-melting level polycrystalline silicon material can reduce the pollution that other external equipment brought and the effect of effective control silicon rod thermal stress.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a preparation device of zone-melting-level polycrystalline silicon materials comprises a base plate;
the furnace body is arranged on the chassis, and the furnace body and the chassis enclose a furnace chamber;
the silicon core is arranged in the furnace cavity and is used as a substrate for chemical vapor deposition;
the main heating power supply is communicated with the silicon core circuit to supply power to the silicon core;
the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material;
and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core.
According to the utility model discloses an aspect, the raw materials import includes main ring canal, inferior ring canal and the outlet duct of admitting air, main ring canal that admits air is used for letting in chlorosilane, hydrogen and trichlorosilane, inferior ring canal that admits air is used for letting in dichlorosilane, main ring canal and inferior ring canal that admits air all include the ring pipe and set up a plurality of intake pipes that communicate with the ring pipe on the ring pipe, intake pipe and furnace chamber intercommunication.
According to one aspect of the utility model, be provided with the electrode on the chassis, main heating power passes through electrode and silicon core circuit intercommunication.
According to the utility model discloses an aspect, supplementary preheating device includes microwave generator and the connecting tube who communicates microwave generator export and furnace chamber top, main heating power is not more than 5kV, microwave generator power is less than or equal to 100kW, voltage is less than or equal to 3kV, microwave frequency is less than or equal to 915MHZ or 2450 MHZ.
According to an aspect of the utility model, be provided with the cooling water chamber in the chassis, the furnace body outer wall is equipped with the cooling jacket, the cooling water chamber is linked together with the cooling jacket.
The utility model discloses the advantage of implementing:
the utility model provides a preparation device of zone-melting-level polysilicon material, which comprises a chassis; the furnace body is arranged on the chassis, and the furnace body and the chassis enclose a furnace chamber; the silicon core is arranged in the furnace cavity and is used as a substrate for chemical vapor deposition; the main heating power supply is communicated with the silicon core circuit to supply power to the silicon core; the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material; and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core. The outer wall of the furnace body is provided with a cooling jacket, and the cooling water cavity is communicated with the cooling jacket. The utility model discloses can reduce the pollution that other external equipment brought and the effect of effective control silicon rod thermal stress. The silicon chip can be efficiently and quickly heated, the risk of high-voltage breakdown starting is avoided, the heating time is shortened, the investment cost is saved, a built-in auxiliary heating device is not needed, a new secondary pollution source is avoided, and the growth of the ultra-pure zone-melting-grade silicon material is facilitated. The segmented feeding growth is beneficial to controlling the feeding proportion, controlling the grain formation in the growth process and reducing the internal stress.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a device for preparing zone-melting-level polysilicon material according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, the preparation device of the zone-melting-stage polysilicon material comprises a chassis 2;
the furnace body 1 is arranged on the chassis 2, and the furnace body 1 and the chassis 2 enclose a furnace chamber;
a silicon core 4 arranged in the furnace cavity and used as a substrate for chemical vapor deposition;
the main heating power supply 8 is in circuit communication with the silicon chip 4 to supply power to the silicon chip 4;
the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material;
and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core 4.
In this embodiment, the raw material inlet includes a main air inlet ring pipe 6, a secondary air inlet ring pipe 5 and an air outlet pipe 7, the main air inlet ring pipe 6 is used for introducing chlorosilane, hydrogen and trichlorosilane, the secondary air inlet ring pipe 5 is used for introducing dichlorosilane, the main air inlet ring pipe 6 and the secondary air inlet ring pipe 5 both include a ring pipe and a plurality of air inlet pipes arranged on the ring pipe and communicated with the ring pipe, and the air inlet pipes are communicated with the furnace chamber.
After the annular pipe is filled with gas, the gas enters the furnace chamber from the gas inlet pipe, so that the gas inlet is more uniform, and the purity of the silicon rod is improved.
In this embodiment, the chassis 2 is provided with an electrode 3, and the main heating power supply 8 is in circuit communication with the silicon core 4 through the electrode 3.
In this embodiment, the auxiliary preheating device comprises a microwave generator and a connecting pipeline for connecting an outlet of the microwave generator with the top end of the furnace chamber, the main heating power supply 8 is not more than 5kV, the power of the microwave generator is not more than 100kW, the voltage is not more than 3kV, and the microwave frequency is 915MHZ or 2450 MHZ.
In this embodiment, a cooling water cavity is arranged in the base plate 2, a cooling jacket is arranged on the outer wall of the furnace body 1, and the cooling water cavity is communicated with the cooling jacket.
The water-cooling jacket can effectively keep the temperature in the furnace cavity and also can prevent the surface of the furnace body from overheating.
In practical use, the furnace body is also provided with a sight glass port and a temperature measuring port.
The utility model discloses the advantage of implementing:
the utility model provides a preparation device of zone-melting-level polysilicon material, which comprises a chassis; the furnace body is arranged on the chassis, and the furnace body and the chassis enclose a furnace chamber; the silicon core is arranged in the furnace cavity and is used as a substrate for chemical vapor deposition; the main heating power supply is communicated with the silicon core circuit to supply power to the silicon core; the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material; and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core. The outer wall of the body is provided with a cooling jacket, and the cooling water cavity is communicated with the cooling jacket. The pollution caused by other external equipment can be reduced, and the thermal stress of the silicon rod can be effectively controlled. The silicon chip can be efficiently and quickly heated, high-voltage breakdown starting is avoided, the heating time is shortened, the investment cost is saved, an auxiliary heating device is not required to be arranged, a new secondary pollution source is avoided, and the growth of the ultra-pure zone melting silicon material is facilitated. The segmented feeding growth is beneficial to controlling the feeding proportion, controlling the grain formation in the growth process and reducing the internal stress.
Claims (5)
1. A preparation facilities of zone-melting level polycrystalline silicon material which characterized in that: the preparation device of the zone-melting polycrystalline silicon material comprises a chassis;
the furnace body is arranged on the chassis, and the furnace body and the chassis enclose a furnace chamber;
the silicon core is arranged in the furnace cavity and is used as a substrate for chemical vapor deposition;
the main heating power supply is communicated with the silicon core circuit to supply power to the silicon core;
the raw material inlet is used for introducing a gas raw material for generating the zone melting level polycrystalline silicon material;
and the auxiliary heating device is communicated with the furnace chamber through a pipeline and used for preheating the silicon core.
2. The apparatus of claim 1, wherein: the raw material inlet comprises a main air inlet ring pipe, a secondary air inlet ring pipe and an air outlet pipe, the main air inlet ring pipe and the secondary air inlet ring pipe respectively comprise a ring pipe and a plurality of air inlet pipes which are arranged on the ring pipe and communicated with the ring pipe, and the air inlet pipes are communicated with the furnace chamber.
3. The apparatus of claim 1, wherein: the chassis is provided with an electrode, and the main heating power supply is communicated with the silicon core circuit through the electrode.
4. The apparatus of claim 1, wherein: the auxiliary heating device comprises a microwave generator and a connecting pipeline for communicating an outlet of the microwave generator with the top end of the furnace chamber, the main heating power supply is not more than 5kV, the power of the microwave generator is not more than 100kW, the voltage is not more than 3kV, and the microwave frequency is 915MHZ or 2450 MHZ.
5. The apparatus of claim 1, wherein: a cooling water cavity is arranged in the base plate, a cooling jacket is arranged on the outer wall of the furnace body, and the cooling water cavity is communicated with the cooling jacket.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120378030.1U CN215161049U (en) | 2021-02-18 | 2021-02-18 | Preparation device of zone-melting-level polycrystalline silicon material |
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| CN202120378030.1U CN215161049U (en) | 2021-02-18 | 2021-02-18 | Preparation device of zone-melting-level polycrystalline silicon material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112723357A (en) * | 2021-02-18 | 2021-04-30 | 上海韵申新能源科技有限公司 | Preparation device and method of zone-melting-level polycrystalline silicon material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112723357A (en) * | 2021-02-18 | 2021-04-30 | 上海韵申新能源科技有限公司 | Preparation device and method of zone-melting-level polycrystalline silicon material |
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