CN218004837U - Semiconductor with bottom heat radiation structure - Google Patents
Semiconductor with bottom heat radiation structure Download PDFInfo
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- CN218004837U CN218004837U CN202222008029.7U CN202222008029U CN218004837U CN 218004837 U CN218004837 U CN 218004837U CN 202222008029 U CN202222008029 U CN 202222008029U CN 218004837 U CN218004837 U CN 218004837U
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- heat dissipation
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Abstract
The utility model discloses a semiconductor with bottom heat radiation structure, including radiator unit, auxiliary assembly, seal assembly and coupling assembling, radiator unit's top is provided with auxiliary assembly, and auxiliary assembly's top laminating has seal assembly. This kind of semiconductor with bottom heat radiation structure, the heat that the chip produced when moving is dispersed downwards through the radiating groove, thereby come to play the effect of heat dissipation cooling to the chip, laminate baffle and apron in proper order in the top of sole plate, wherein supplementary screw is corresponding with the position of fixed screw, screw aperture size and the position of reserving with the apron surface simultaneously are in same perpendicular line, consequently, pass supplementary screw through rectangular screw, fixed screw is connected with the sole plate, can seal whole chip, can prevent that the dust from getting into wherein, the improvement security, wherein the baffle adopts silicon dioxide as the insulating layer, can prevent that electric leakage phenomenon from taking place, improve holistic insulating nature through the baffle.
Description
Technical Field
The utility model relates to the field of semiconductor technology, specifically be a semiconductor with bottom heat radiation structure.
Background
The semiconductor is a material with conductivity between a conductor and an insulator at normal temperature; semiconductor refers to a material with controllable conductivity ranging from an insulator to a conductor.
The bottom of a semiconductor in the market does not have a heat dissipation structure to dissipate heat and cool an internal chip, so that the chip is damaged due to overhigh temperature.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor with bottom heat radiation structure to it does not have heat radiation structure to dispel the heat the cooling to the internal chip to put forward its bottom of semiconductor on the market among the solution above-mentioned background art, leads to the problem that the chip high temperature produced the damage.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a semiconductor with bottom heat radiation structure, includes radiator unit, auxiliary assembly, seal assembly and coupling assembling, radiator unit's top is provided with auxiliary assembly, and auxiliary assembly's top laminating has seal assembly, radiator unit's the outside is provided with coupling assembling, radiator unit includes end support plate, radiating groove, fixed block and fixed screw, and the radiating groove has been seted up on end support plate's bottom surface, end support plate's top four corners is provided with the fixed block, and the fixed screw has been seted up on the surface of fixed block.
Furthermore, the bottom support plate and the heat dissipation grooves are of an integrated structure, and the heat dissipation grooves are provided with two groups.
Furthermore, the auxiliary assembly comprises a partition plate and auxiliary screw holes, and the four corners of the partition plate are provided with the auxiliary screw holes.
Furthermore, be fixed connection between supplementary screw and the baffle, and laminate mutually between baffle and the seal assembly.
Further, seal assembly includes apron, depressed groove and rectangular screw, and the four corners of apron is provided with the depressed groove, rectangular screw has been seted up on the surface of depressed groove.
Furthermore, a welding integrated structure is arranged between the concave groove and the cover plate, and the strip screw is in threaded connection with the cover plate.
Furthermore, coupling assembling includes supporting legs and supplementary leg, and the bottom of supporting legs is provided with supplementary leg.
Compared with the prior art, the beneficial effects of the utility model are that: this semiconductor with bottom heat radiation structure, the heat that the chip produced when the operation is carried out is dispersed downwards through the radiating groove, thereby come to play the effect of heat dissipation cooling to the chip, laminate baffle and apron in proper order in the top of bottom sprag board, wherein supplementary screw is corresponding with the position of fixed screw, screw aperture size and the position of reserving with the apron surface simultaneously are in same perpendicular line, therefore, pass supplementary screw through rectangular screw, fixed screw is connected with the bottom sprag board, can seal whole chip, can prevent that the dust from getting into wherein, improve the security, wherein the baffle adopts silicon dioxide as the insulating layer, can prevent that the electric leakage phenomenon from taking place, improve holistic insulating nature through the baffle.
Through radiator unit's setting, set up flutedly in the top of end support plate and be used for connecting the chip, be equipped with the radiating groove simultaneously on end support plate surface, the heat that the chip produced when moving is dispersed downwards through the radiating groove to come to play the effect of heat dissipation cooling to the chip.
Through the setting of auxiliary assembly, leave the fixed block in the top four corners department of bottom sprag board, fixed screw has been seted up on its surface, laminate baffle and apron in the top of bottom sprag board in proper order, wherein supplementary screw is corresponding with the position of fixed screw, screw aperture size and the position of reserving simultaneously with the apron surface are in same perpendicular line, connect through the screw, wherein the baffle adopts silicon dioxide as the insulating layer, can prevent that the electric leakage phenomenon from taking place, improve holistic insulating nature through the baffle.
Through seal assembly's setting, laminate baffle and apron in proper order in the top of bottom sprag board, wherein supplementary screw is corresponding with the position of fixed screw, and the screw aperture size and the position of reserving with the apron surface simultaneously are in same perpendicular line, consequently, pass supplementary screw, fixed screw and bottom sprag board through rectangular screw and be connected, can seal whole chip, can prevent that the dust from getting into wherein, improves the security.
Drawings
FIG. 1 is a schematic view of the three-dimensional explosion structure of the present invention;
FIG. 2 is a schematic front view of the present invention;
fig. 3 is a schematic view of a part of an enlarged structure at a in fig. 2 according to the present invention.
In the figure: 1. a heat dissipating component; 101. a bottom support plate; 102. a heat sink; 103. a fixed block; 104. fixing screw holes; 2. an auxiliary component; 201. a partition plate; 202. an auxiliary screw hole; 3. a seal assembly; 301. a cover plate; 302. a recessed groove; 303. a strip screw; 4. a connecting assembly; 401. supporting legs; 402. and (5) auxiliary welding feet.
Detailed Description
As shown in fig. 1, a semiconductor with a bottom heat dissipation structure includes: the heat dissipation component 1 comprises a bottom support plate 101, heat dissipation grooves 102, fixing blocks 103 and fixing screw holes 104, wherein the bottom surface of the bottom support plate 101 is provided with the heat dissipation grooves 102, four corners above the bottom support plate 101 are provided with the fixing blocks 103, the surface of the fixing block 103 is provided with the fixing screw holes 104, the bottom support plate 101 and the heat dissipation grooves 102 are integrated, two groups of heat dissipation grooves 102 are arranged, a groove is formed above the bottom support plate 101 for connecting a chip, the surface of the bottom support plate 101 is provided with the heat dissipation grooves 102, heat generated by the chip in operation is dissipated downwards through the heat dissipation grooves 102, thereby come to play the effect of heat dissipation cooling to the chip, auxiliary component 2 includes baffle 201 and supplementary screw 202, and the supplementary screw 202 has been seted up at the four corners of baffle 201, be fixed connection between supplementary screw 202 and the baffle 201, and laminate mutually between baffle 201 and seal assembly 3, fixed block 103 is left in the top four corners department of bottom sprag board 101, fixed screw 104 has been seted up on its surface, laminate baffle 201 and apron 301 in proper order in the top of bottom sprag board 101, wherein supplementary screw 202 is corresponding with the position of fixed screw 104, screw aperture size and the position of reserving simultaneously with apron 301 surface are in same perpendicular line, connect through the screw, wherein baffle 201 adopts silicon dioxide as the insulating layer, can prevent that electric leakage phenomenon from taking place, improve holistic insulating properties through baffle 201.
As shown in fig. 2-3, a semiconductor with a bottom heat dissipation structure, a sealing assembly 3 includes a cover plate 301, a recessed groove 302 and a strip screw 303, the four corners of the cover plate 301 are provided with the recessed groove 302, the surface of the recessed groove 302 is provided with the strip screw 303, the recessed groove 302 and the cover plate 301 are welded into a whole, the strip screw 303 and the cover plate 301 are in threaded connection, a partition plate 201 and the cover plate 301 are sequentially attached above a bottom support plate 101, wherein an auxiliary screw 202 corresponds to a fixing screw 104, and the size and the position of the screw hole diameter reserved on the surface of the cover plate 301 are in the same vertical line, so that the whole chip can be sealed by the strip screw 303 passing through the auxiliary screw 202, the fixing screw 104 and the bottom support plate 101, thereby preventing dust from entering the chip and improving safety, the connecting assembly 4 includes a support leg 401 and an auxiliary welding leg 402, and the bottom of the support leg 401 is provided with the auxiliary welding leg 402.
In summary, in the semiconductor with bottom heat dissipation structure, firstly, a groove is formed above the bottom support plate 101 for connecting a chip, and the heat dissipation groove 102 is formed on the surface of the bottom support plate 101, the heat generated by the chip during operation is dissipated downwards through the heat dissipation groove 102, so as to perform the heat dissipation and cooling functions on the chip, the partition plate 201 and the cover plate 301 are sequentially attached above the bottom support plate 101, wherein the auxiliary screw holes 202 correspond to the fixing screw holes 104, and the hole diameters and positions of the screw holes reserved on the surface of the cover plate 301 are in the same vertical line, therefore, the whole chip can be sealed by connecting the strip screws 303 through the auxiliary screw holes 202 and the fixing screw holes 104 with the bottom support plate 101, so as to prevent dust from entering the chip, thereby improving the safety, wherein the partition plate 201 adopts silicon dioxide as an insulating layer, thereby preventing the occurrence of a current leakage phenomenon, and improving the overall insulation performance through the partition plate 201.
Claims (7)
1. A semiconductor with bottom heat radiation structure, includes radiator unit (1), auxiliary assembly (2), seal assembly (3) and coupling assembling (4), its characterized in that: the heat dissipation assembly comprises a heat dissipation assembly (1), wherein an auxiliary assembly (2) is arranged above the heat dissipation assembly (1), a sealing assembly (3) is attached to the upper portion of the auxiliary assembly (2), a connecting assembly (4) is arranged on the outer side of the heat dissipation assembly (1), the heat dissipation assembly (1) comprises a bottom supporting plate (101), heat dissipation grooves (102), fixing blocks (103) and fixing screw holes (104), the heat dissipation grooves (102) are formed in the surface of the bottom supporting plate (101), the fixing blocks (103) are arranged at four corners of the upper portion of the bottom supporting plate (101), and the fixing screw holes (104) are formed in the surface of the fixing blocks (103).
2. A semiconductor with a bottom heat dissipation structure as recited in claim 1, wherein: the bottom support plate (101) and the heat dissipation grooves (102) are integrated, and two groups of heat dissipation grooves (102) are arranged.
3. A semiconductor with a bottom heat dissipation structure as recited in claim 1, wherein: the auxiliary assembly (2) comprises a partition plate (201) and auxiliary screw holes (202), and the auxiliary screw holes (202) are formed in four corners of the partition plate (201).
4. A semiconductor with a bottom heat dissipation structure as recited in claim 3, wherein: the auxiliary screw hole (202) is fixedly connected with the partition plate (201), and the partition plate (201) is attached to the sealing assembly (3).
5. A semiconductor with a bottom heat dissipation structure as recited in claim 1, wherein: sealing component (3) are including apron (301), depressed groove (302) and rectangular screw (303), and the four corners of apron (301) is provided with depressed groove (302), rectangular screw (303) have been seted up on the surface of depressed groove (302).
6. A semiconductor with a bottom heat dissipation structure as recited in claim 5, wherein: the concave groove (302) and the cover plate (301) are of a welded integral structure, and the strip screw (303) is in threaded connection with the cover plate (301).
7. A semiconductor with a bottom heat dissipation structure as recited in claim 1, wherein: the connecting component (4) comprises a supporting leg (401) and an auxiliary welding leg (402), and the auxiliary welding leg (402) is arranged at the bottom of the supporting leg (401).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222008029.7U CN218004837U (en) | 2022-08-01 | 2022-08-01 | Semiconductor with bottom heat radiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222008029.7U CN218004837U (en) | 2022-08-01 | 2022-08-01 | Semiconductor with bottom heat radiation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218004837U true CN218004837U (en) | 2022-12-09 |
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ID=84319657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222008029.7U Active CN218004837U (en) | 2022-08-01 | 2022-08-01 | Semiconductor with bottom heat radiation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218004837U (en) |
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2022
- 2022-08-01 CN CN202222008029.7U patent/CN218004837U/en active Active
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