CN217984044U - Terahertz radiation source and terahertz transceiving system - Google Patents
Terahertz radiation source and terahertz transceiving system Download PDFInfo
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- CN217984044U CN217984044U CN202222417217.5U CN202222417217U CN217984044U CN 217984044 U CN217984044 U CN 217984044U CN 202222417217 U CN202222417217 U CN 202222417217U CN 217984044 U CN217984044 U CN 217984044U
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Abstract
The utility model provides a terahertz radiation source and terahertz receiving and dispatching system now, wherein, this terahertz radiation source now includes: the system comprises a superlens array, a photoconductive antenna array and an exit device; the superlens array comprises a plurality of close-packed superlenses, and the photoconductive antenna array comprises a plurality of photoconductive antennas; the superlens array is used for splitting incident light into a plurality of sub-beams, and the superlens is used for focusing the corresponding sub-beams to the center of the corresponding photoconductive antenna; the photoconductive antenna array generates terahertz waves through radiation based on the incident multiple sub-beams; the emission device is used for emitting the terahertz waves. Through the embodiment of the utility model provides a terahertz radiation source and terahertz send-receiver system, super lens array wherein comprises a plurality of close-packed super lens, can not produce the gap between every super lens, can not lead to the light leak problem, can improve the collection efficiency to the incident light; and the terahertz radiation source based on the superlens array has the advantages of reduced cost, simple structure and more miniaturization.
Description
Technical Field
The utility model relates to a terahertz application technology field particularly, relates to a terahertz radiation source and terahertz receive and dispatch system now.
Background
At present, a terahertz radiation source can split incident infrared pump laser through a microlens array, and sub-beams obtained through splitting are respectively focused to the central positions of different photoconductive antennas, so that a semiconductor material in contact with the photoconductive antennas generates photon-generated carriers, and accelerated motion and recombination are performed under the loading of voltage on a metal electrode, and terahertz waves are radiated.
However, the existence of significant gaps between the microlenses arranged in an array leads to light leakage and reduces the light collection efficiency.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, an object of the embodiments of the present invention is to provide a terahertz radiation source and a terahertz transceiving system.
In a first aspect, the embodiment of the present invention provides a terahertz radiation source, including: the device comprises a superlens array, a photoconductive antenna array and an exit device; the photoconductive antenna array is arranged at an image focal plane of the superlens array, and the emergent device is arranged on the emergent side of the photoconductive antenna array; the superlens array comprises a plurality of closely packed superlenses, and the photoconductive antenna array comprises a plurality of photoconductive antennas; the superlenses correspond to the photoconductive antennas one by one; the super lens array is used for splitting incident light into a plurality of sub beams, and the super lens is used for focusing the corresponding sub beams to the center of the corresponding photoconductive antenna; the photoconductive antenna array generates terahertz waves through radiation based on the incident multiple sub-beams; the emitting device is used for emitting the terahertz waves.
Optionally, the photoconductive antenna comprises an antenna and a layer of semiconductor material; the center of the photoconductive antenna is the center of the antenna; the semiconductor material layer is arranged on one side, away from the super lens, of the antenna; the semiconductor material layer is used for generating terahertz waves in a radiation mode under the condition that the sub beams are focused to the center of the antenna and the antenna is connected with a voltage.
Optionally, the structure of the antenna includes: a bow-tie antenna structure, a logarithmic antenna structure, a dipole antenna structure, a conical antenna structure, or a helical antenna structure.
Optionally, the superlens comprises a first nanostructure, and the phase distribution of the superlens satisfies:
wherein λ is 1 Representing an operating wavelength of the superlens; r is 1 Representing a distance between the first nanostructure and a center of the superlens; n is 1 Representing the refractive index of the spatial medium in which the sub-beams are located; f. of 1 Representing the focal length of the superlens.
Optionally, the superlens includes a plurality of superstructure units arranged in an array, the superstructure units being a close-packageable pattern, and the first nanostructure is disposed at a vertex and/or a central position of the close-packageable pattern.
Optionally, the material of the first nanostructure comprises: crystalline and amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide, or chalcogenide glass.
Optionally, the exit device is a super-surface, and the super-surface is used for collimating and exiting the terahertz waves.
Optionally, the super-surface is a super-surface for eliminating broadband chromatic aberration.
Optionally, the super-surface comprises a second nanostructure, the phase distribution of the super-surface satisfying:
wherein λ is 2 Represents an operating wavelength of the super-surface; r is 2 Representing a distance between the second nanostructure and the center of the super-surface; n is 2 A refractive index representing a spatial medium of the terahertz wave between the array of photoconductive antennas and the super surface; f. of 2 Representing the focal length of the super surface.
Optionally, the material of the second nanostructure comprises: high resistivity silicon, gallium arsenide, indium phosphide or indium gallium arsenide.
Optionally, the superlens array, the photoconductive antenna array and the exit device are of a unitary structure.
Optionally, the terahertz radiation source further comprises: a first substrate layer and a second substrate layer; the first substrate layer is filled between the superlens array and the photoconductive antenna array; the second substrate layer is filled between the photoconductive antenna array and the emergent device, and the thickness of the second substrate layer is the same as the focal length of the super surface.
Optionally, the material of the first substrate layer comprises: photoresist materials, crystalline and amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide or chalcogenide glass; the material of the second substrate layer comprises: gallium arsenide, indium phosphide, or indium gallium arsenide.
In a second aspect, the embodiment of the present invention further provides a terahertz transceiving system, including: any one of the terahertz radiation source and the terahertz receiving device is provided; the terahertz radiation source is used for emitting terahertz waves to a target; the terahertz receiving device is used for receiving terahertz waves reflected by the target.
In the embodiment of the present invention, in the scheme provided by the above first aspect, the superlens array adopted by the terahertz radiation source is composed of a plurality of densely-packed superlenses, no gap is generated between each superlens, the superlens array with a seamless structure enables the terahertz radiation source not to cause the problem of light leakage, and the collection efficiency of incident light can be improved; in addition, the terahertz radiation source based on the superlens array is low in cost, simple in structure and more miniaturized.
The embodiment of the utility model provides an in the scheme that above-mentioned second aspect provided, because of the plane structure that the terahertz radiation source that it had is compact, be favorable to integrating and encapsulating with other terahertz devices (like terahertz receiving device), make this terahertz receiving and dispatching system compacter now, whole miniaturization more.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 shows a schematic diagram of a terahertz radiation source provided by an embodiment of the present invention;
fig. 2 shows a top view of a photoconductive antenna in a terahertz radiation source provided by an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a super-structure unit arranged in a fan shape in a superlens in a terahertz radiation source provided by an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a super-structure unit arranged in a square in a superlens in a terahertz radiation source provided by an embodiment of the present invention;
fig. 5 shows a schematic diagram of a super-structure unit arranged in a regular hexagon in a superlens in a terahertz radiation source provided by an embodiment of the present invention;
fig. 6 shows a schematic diagram of an exit device including a super-surface in a terahertz radiation source provided by an embodiment of the present invention;
fig. 7 shows a schematic diagram of a terahertz radiation source of an integrated structure provided by an embodiment of the present invention;
fig. 8 shows a schematic diagram of a terahertz transceiving system provided by an embodiment of the present invention.
Icon:
the terahertz wave receiving device comprises a 1-superlens array, a 2-photoconductive antenna array, a 3-emergent device, a 4-first substrate layer, a 5-second substrate layer, an 11-superlens, a 110-superstructure unit, a 111-first nanostructure, a 21-photoconductive antenna, a 211-antenna, a 212-semiconductor material layer, a 31-super surface, a 311-second nanostructure, a 600-terahertz radiation source and a 700-terahertz receiving device.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The embodiment of the utility model provides a terahertz radiation source is provided, it is shown with reference to fig. 1, this terahertz radiation source includes: a superlens array 1, a photoconductive antenna array 2 and an exit device 3; the photoconductive antenna array 2 is arranged at an image focal plane of the superlens array 1, and the emergent device 3 is arranged at the emergent side of the photoconductive antenna array 2; fig. 1 shows that the upper side of the superlens array 1 is the light incident side, and fig. 1 is sequentially provided with the superlens array 1, the photoconductive antenna array 2 and the emitting device 3 from top to bottom.
As shown in fig. 1, the superlens array 1 includes a plurality of closely packed superlenses 11, and the photoconductive antenna array 2 includes a plurality of photoconductive antennas 21; the superlenses 11 correspond to the photoconductive antennas 21 one to one; the superlens array 1 is used for splitting incident light into a plurality of sub-beams, and the superlens 11 is used for focusing the corresponding sub-beams to the center of the corresponding photoconductive antenna 21; the photoconductive antenna array 2 generates terahertz waves through radiation based on the incident multiple sub-beams; the emission device 3 emits the terahertz waves.
In the terahertz radiation source provided by the embodiment of the present invention, the superlens 11 may be a planar superlens, and the shape of the superlenses 11 may be a shape that enables the superlenses 11 to be densely packed and arranged, for example, a square or a regular hexagon; the surface of the superlens array 1, which is formed by arranging a plurality of superlenses 11 in a close-packed manner, can achieve the effect of no gap. The light-emitting side of the superlens array 1 is correspondingly provided with a photoconductive antenna array 2, and further, the photoconductive antenna array 2 is arranged at the position of an image focal plane of the superlens array 1, that is, the photoconductive antenna array 2 and the image focal plane of the superlens array 1 are located on the same plane. The plurality of photoconductive antennas 21 included in the photoconductive antenna array 2 may be arranged corresponding to the plurality of superlenses 11 in the superlens array 1, for example, the number of the plurality of superlenses 11 may be M × N, and the plurality of superlenses 11 are arranged in a manner of M × N, and correspondingly, the number of the plurality of photoconductive antennas 21 may also be M × N, and may also be arranged in a manner of M × N, where M and N are natural numbers. The arrangement mode is that the incident light can be split by a plurality of super lenses 11 after entering the super lens array 1, and each super lens 11 can focus the split and emitted light to enter the photoconductive antenna 21 corresponding to the super lens 11; the light emitted by each superlens 11 may be referred to as a sub-beam, that is, the incident light may be divided into a plurality of sub-beams by the superlenses 11 in the superlens array 1, each sub-beam correspondingly enters a corresponding photoconductive antenna 21, and the photoconductive antenna 21 is the photoconductive antenna 21 corresponding to the superlens 11 emitting the sub-beam. In the embodiment of the present invention, the incident light may be an infrared laser, such as an infrared femtosecond pump laser.
Further, the sub-beams may be incident on a core radiation area of the photoconductive antenna 21, such as the center of the photoconductive antenna 21, to be radiated to obtain an electromagnetic wave, where a band corresponding to the electromagnetic wave is a terahertz band; in other words, each sub-beam is incident into the center of the corresponding photoconductive antenna 21, so that the corresponding photoconductive antenna 21 can radiate a terahertz wave (e.g., a small amount of terahertz wave); terahertz waves radiated by the multiple photoconductive antennas 21 included in the photoconductive antenna array 2 are superposed to form terahertz waves with large radiation quantity, and the terahertz waves with large radiation quantity are emitted by the emitting device 3 arranged on the light emitting side of the photoconductive antenna array 2; wherein the exit means 3 may be a conventional silicon hemispherical lens or the like.
The super lens array 1 adopted by the embodiment of the utility model is composed of a plurality of densely packed super lenses 11, no gap is generated between each super lens 11, the super lens array 1 with seamless structure can prevent the terahertz radiation source from light leakage, and the collection efficiency of incident light can be improved; in addition, the terahertz radiation source adopting the superlens array 1 has the advantages of reduced cost, simple structure and more miniaturization.
Alternatively, referring to fig. 1 and fig. 2, fig. 2 is an enlarged schematic view of the photoconductive antenna 21, and is a top view; the photoconductive antenna 21 includes: an antenna 211 and a semiconductor material layer 212; the center of the photoconductive antenna 21 is the center of the antenna 211; the semiconductor material layer 212 is arranged on the side of the antenna 211 far away from the super lens 11; the semiconductor material layer 212 is used for generating terahertz waves through radiation when the sub-beams are focused to the center of the antenna 211 and the antenna 211 is connected with a voltage.
In the embodiment of the present invention, as shown in fig. 1, one side of each photoconductive antenna 21 close to the superlens 11 is provided with an antenna 211, and one side of the antenna 211 far away from the superlens 11 is provided with a semiconductor material 212, as in fig. 1, the antenna 211 and the semiconductor material 212 are sequentially attached to each other from top to bottom, and fig. 2 shows the top of the antenna 211 as its incident light side. Wherein, the antenna 211 in the photoconductive antenna 21 may include two portions, such as a portion located at the left side and a portion located at the right side in fig. 2; a central position between the two (a left portion and a right portion of the antenna 211) may be a center of the antenna 211, and a position closest to the two portions (e.g., between two vertices) in fig. 2 may be a center of the antenna 211; also, the center of the antenna 211 may be the center of the photoconductive antenna 21, and the position may be regarded as a core radiation area of the photoconductive antenna 21, and in the case where a sub beam is incident into the center of the antenna 211, a terahertz wave can be radiated.
Optionally, the structure of the antenna 211 may include: a bow-tie antenna structure, a logarithmic antenna structure, a dipole antenna structure, a conical antenna structure, or a helical antenna structure; the antenna 211 of these several kinds of structures has at least one advantage such as the form is simple, the frequency bandwidth, cross polarization is low and gain height, can comparatively radiate terahertz wave steadily, is applicable to the embodiment of the utility model provides a terahertz radiation source.
In the photoconductive antenna 21, the semiconductor material layer 212 located on the light-emitting side of the antenna 211 (e.g., below the antenna 211 in fig. 1) can cooperate with the antenna 211 to radiate terahertz waves; for example, when a sub-beam is focused and incident on the center of the antenna 211, the semiconductor material layer 212 on the light-emitting side surface of the antenna 211 is excited to generate photo-generated carriers, and the photo-generated carriers are accelerated and recombined under a load voltage, thereby radiating terahertz waves. In an embodiment of the present invention, the semiconductor material layer 212 may be a layer of low temperature grown gallium arsenide.
Optionally, the superlens 11 includes the first nanostructure 111, and the phase distribution of the superlens 11 satisfies:
wherein λ is 1 Represents the operating wavelength of the superlens 11; r is 1 Represents the distance between the first nanostructure 111 and the center of the superlens 11; n is 1 The refractive index of the space medium in which the sub-beams are located is shown, wherein the space medium in which the sub-beams are located is the light outgoing side of the superlens 11 (such as the lower side of the superlens 11 in fig. 1); f. of 1 Indicating the focal length of the superlens 11.
In the embodiment of the present invention, the surface of each superlens 11 (e.g., the upper surface of the superlens 11 in fig. 1) is provided with a plurality of first nanostructures 111; each superlens 11 has a certain converging function (e.g., focusing) on the incident light received by it, and the converging function can be realized by the first nanostructure 111 of each superlens 11. Wherein the first nanostructure 111 may be an all-dielectric structure unit having a high transmittance or a high refractive index for incident light (such as infrared femtosecond pump laser), and optionally, the material of the first nanostructure 111 may include: crystalline silicon, amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide, or chalcogenide glass.
Wherein, at a focal length f 1 In the superlens 11, a distance r is set from the center of the superlens 11 1 The phase of the first nanostructure 111 satisfies the above formula:
in the case of (2), the superlens 11 may be made to have a wavelength of λ 1 Such as an infrared femtosecond pump laser, to perform a condensing function.
Optionally, as shown in fig. 3 to 5, the superlens 11 includes a plurality of superstructure units 110 arranged in an array, the superstructure units 110 are close-packable patterns, and the first nanostructures 111 are disposed at the vertices and/or the central positions of the close-packable patterns.
In the embodiment of the present invention, not only each superlens 11 is a close-packed pattern, i.e. a pattern capable of making a plurality of superlenses 11 realize close-packed array arrangement, but also the superstructure unit 110 included in the superlens 11 may be a close-packed pattern, and the vertex and/or the center of the superstructure unit 110 of each close-packed pattern has the first nanostructure 111; because the plurality of superstructure units 110 can form a close-packed effect, no gap exists on the surface of each super lens 11, and light leakage is avoided. As shown in fig. 3, the superstructure unit 110 may be a fan shape, and a plurality of superstructure units 110 may be arranged in a fan-shaped array; as shown in fig. 4, the superstructure unit 110 may be square, and a plurality of superstructure units 110 may be arranged in a square array; preferably, as shown in fig. 5, the superstructure unit 110 may be a regular hexagon, and the plurality of superstructure units 110 may be arranged in an array of regular hexagons; compared with other arrays arranged in a close-packed pattern, the array arranged in the regular hexagon has a more compact density mode, the duty ratio of the superstructure unit 110 is large, the space can be more effectively utilized, and the adjustment range of the effective refractive index can be enlarged due to the more compact arrangement. Those skilled in the art will recognize that the superstructure units 110 included in the superlens 11 may also include other forms of array arrangements, and all such variations are within the scope of the present application.
Alternatively, referring to fig. 6, the exit device 3 may be a super surface 31, and the super surface 31 is used for collimating and exiting the terahertz waves. Under the condition that the emergent device 3 comprises the super-surface 31, the size of the terahertz radiation source can be further reduced, the processing difficulty and the cost of the terahertz radiation source can be reduced, and the terahertz radiation source is superior to the condition that the emergent device 3 comprises a traditional silicon hemispherical lens.
Optionally, the super surface 31 is a super surface for eliminating broadband chromatic aberration; in other words, the super-surface 31 can collimate and emit a terahertz wave having a certain bandwidth (e.g., a broadband); because the photoconductive antenna array 2 can radiate and generate single-wavelength terahertz waves or broadband terahertz waves, the broadband achromatic super surface 31 can collect and collimate the broadband terahertz waves generated by the photoconductive antenna array 2, and finally the terahertz radiation source emits collimated broadband terahertz waves.
Alternatively, referring to fig. 6, the super-surface 31 includes the second nanostructure 311, and the phase distribution of the super-surface 31 satisfies:
wherein λ is 2 Represents the operating wavelength of the super-surface 31; r is 2 Represents the distance between the second nanostructure 311 and the center of the meta-surface 31; n is 2 The refractive index of a space medium of the terahertz wave between the photoconductive antenna array 2 and the super surface 31 is represented, where the space medium between the photoconductive antenna array 2 and the super surface 31 is a medium on the light outgoing side of the photoconductive antenna array 2 (such as below the photoconductive antenna array 2 in fig. 6); f. of 2 Indicating the focal length of the super surface 31.
In an embodiment of the present invention, any surface of the super surface 31 (e.g., the upper surface of the super surface 31 in fig. 6) may be provided with a plurality of second nanostructures 311; the super-surface 31 has a function of collimating and emitting terahertz waves received by the super-surface (such as terahertz waves radiated by the photoconductive antenna array 2), and specifically, the function can be implemented by the second nanostructure 311. The second nanostructure 311 may be an all-dielectric structural unit and made of a terahertz low-loss material, and optionally, the material of the second nanostructure 311 includes: high resistivity silicon, gallium arsenide, indium phosphide or indium gallium arsenide.
Wherein, at a focal length f 2 In the super-surface 31, at a distance r from the center of the super-surface 31 2 The phase of the second nanostructure 311 satisfies the above formula:
in the case of (2), the super-surface 31 may be made to realize a wavelength of λ 2 The terahertz wave is collimated and emitted.
Alternatively, referring to fig. 7, the superlens array 1, the photoconductive antenna array 2 and the exit device 3 are an integral structure.
As shown in fig. 7, in the case that the light emitting device 3 includes the super surface 31, since the super lens array 1 and the super surface 31 are both planar structures, a semiconductor process may be adopted to integrate the super lens array 1, the photoconductive antenna array 2 and the light emitting device 3 (the super surface 31) into a single structure, and in the case of the single structure, the second nanostructure 311 possessed by the light emitting device 3 (the super surface 31) may be disposed on the light emitting side surface of the super surface 31 (the lower surface of the super surface 31 in fig. 7).
In the embodiment of the utility model, the integrally packaged terahertz radiation source is a compact plane structure, and the integration mode of the semiconductor process is more favorable for mass production, and the cost is lower than that of a curved micro-lens array and a silicon hemispherical lens; in addition, the terahertz radiation source with the integrated structure can completely fix the relative positions of the superlens array 1 and the photoconductive antenna array 2, so that the condition that the light path is easy to drift due to the influence of the external environment is avoided; the focusing point of each superlens 11 can be accurately aligned to the center of the corresponding photoconductive antenna 21, the light path collimation effect is good, the disadvantage that the traditional microlens array needs manual focusing alignment is eliminated, and the system stability is stronger.
Optionally, as shown in fig. 7, the terahertz radiation source further includes: a first substrate layer 4 and a second substrate layer 5; in fig. 7, a first substrate layer 4 is filled between the superlens array 1 and the photoconductive antenna array 2; the second substrate layer 5 is filled between the photoconductive antenna array 2 and the exit device 3, and the thickness of the second substrate layer 5 is the same as the focal length of the super surface 31.
The embodiment of the utility model provides an in, can also fill two-layer substrate layer in this terahertz radiation source now, like first substrate layer 4 and second substrate layer 5, optionally, this first substrate layer 4's material can adopt the little material of infrared femto second pumping laser range loss, include: photoresist materials, crystalline and amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide or chalcogenide glass; the material of the second substrate layer 5 can adopt a material with small loss in the terahertz waveband, and the material comprises: gallium arsenide, indium phosphide or indium gallium arsenide.
The first substrate layer 4 can provide a certain support for the superlens array 1, and is more stable than a structure in which only air is filled between the superlens array 1 and the photoconductive antenna array 2; the second substrate layer 5 may provide a certain support for the photoconductive antenna array 2, and the second nanostructure 311 of the super surface 31 may be directly disposed on a side surface of the second substrate layer 5 away from the photoconductive antenna array 2 (as shown in fig. 7), that is, the second substrate layer 5 may be a base of the super surface 31; such a structure enables the terahertz radiation source to be more miniaturized.
The embodiment of the utility model provides a terahertz is receiving and dispatching system still provides, it is shown with reference to fig. 8 that this terahertz is receiving and dispatching system now includes: any one of the terahertz radiation source 600 and the terahertz receiving device 700 described above; the terahertz radiation source 600 is used for emitting terahertz waves to a target; the terahertz receiving device 700 is used to receive terahertz waves reflected by a target.
The terahertz transceiving system can transmit a terahertz wave to a target, which can be an object to be detected, through the terahertz radiation source 600, and receive light (such as reflected terahertz wave) reflected from the surface of the target through the terahertz receiving device 700, and process the received terahertz wave to obtain required information of the target. The embodiment of the utility model provides a terahertz receiving and dispatching system now, because of its terahertz radiation source that has be compact planar structure, be favorable to integrating and encapsulating with other terahertz devices (like terahertz receiving device 700), make this terahertz receiving and dispatching system now compacter, whole miniaturization more.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the technical solutions of the changes or replacements within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (14)
1. A terahertz radiation source, comprising: the device comprises a superlens array (1), a photoconductive antenna array (2) and an exit device (3); the photoconductive antenna array (2) is arranged at an image focal plane of the superlens array (1), and the emergent device (3) is arranged at the light emergent side of the photoconductive antenna array (2);
the superlens array (1) comprises a plurality of closely packed superlenses (11), and the photoconductive antenna array (2) comprises a plurality of photoconductive antennas (21); the superlenses (11) correspond to the photoconductive antennas (21) one by one;
the superlens array (1) is used for splitting incident light into a plurality of sub-beams, and the superlens (11) is used for focusing the corresponding sub-beams to the center of the corresponding photoconductive antenna (21);
the photoconductive antenna array (2) radiatively generates terahertz waves based on the incident plurality of sub-beams;
the emission device (3) is used for emitting the terahertz waves.
2. The terahertz radiation source of claim 1, wherein the photoconductive antenna (21) comprises an antenna (211) and a layer of semiconductor material (212);
the center of the photoconductive antenna (21) is the center of the antenna (211);
the semiconductor material layer (212) is arranged on one side of the antenna (211) far away from the super lens (11);
the semiconductor material layer (212) is used for generating terahertz waves in a radiation mode under the condition that the sub beams are focused to the center of the antenna (211) and the antenna (211) is connected with a voltage.
3. The terahertz radiation source of claim 2, wherein the structure of the antenna (211) comprises: a bow-tie antenna structure, a logarithmic antenna structure, a dipole antenna structure, a conical antenna structure, or a helical antenna structure.
4. The terahertz radiation source according to claim 1, wherein the superlens (11) comprises a first nanostructure (111), and the phase distribution of the superlens (11) satisfies:
wherein λ is 1 Represents the operating wavelength of the superlens (11); r is 1 Represents the distance between the first nanostructure (111) and the center of the superlens (11); n is a radical of an alkyl radical 1 Representing the refractive index of the spatial medium in which the sub-beams are located; f. of 1 Represents the focal length of the superlens (11).
5. The terahertz radiation source according to claim 4, wherein the superlens (11) comprises a plurality of superstructure units (110) arranged in an array, the superstructure units (110) being close-stackable patterns, the vertices and/or the central positions of the close-stackable patterns being provided with the first nanostructures (111).
6. The terahertz radiation source according to claim 4, wherein the material of the first nanostructure (111) comprises: crystalline and amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide or chalcogenide glass.
7. The terahertz radiation source according to any one of claims 1 to 6, wherein the exit device (3) is a super surface (31), and the super surface (31) is used for collimating and exiting the terahertz waves.
8. The terahertz radiation source according to claim 7, wherein the super surface (31) is a super surface for eliminating broadband chromatic aberration.
9. The terahertz radiation source according to claim 7, wherein the super-surface (31) comprises second nanostructures (311), and the phase distribution of the super-surface (31) satisfies:
wherein λ is 2 Represents an operating wavelength of said super surface (31); r is 2 Represents the distance between the second nanostructure (311) and the center of the super surface (31); n is 2 Representing the refractive index of the terahertz wave in the spatial medium between the photoconductive antenna array (2) and the super surface (31); f. of 2 Represents the focal length of the super surface (31).
10. The terahertz radiation source of claim 9, wherein the material of the second nanostructure (311) comprises: high resistivity silicon, gallium arsenide, indium phosphide or indium gallium arsenide.
11. The terahertz radiation source according to claim 10, wherein the superlens array (1), the photoconductive antenna array (2) and the exit device (3) are of a unitary structure.
12. The terahertz radiation source of claim 7, further comprising: a first substrate layer (4) and a second substrate layer (5);
the first substrate layer (4) is filled between the superlens array (1) and the photoconductive antenna array (2);
the second substrate layer (5) is filled between the photoconductive antenna array (2) and the exit device (3), and the thickness of the second substrate layer (5) is the same as the focal length of the super surface (31).
13. The terahertz radiation source of claim 12, wherein the material of the first substrate layer (4) comprises: photoresist materials, crystalline and amorphous silicon, quartz glass, silicon nitride, titanium oxide, aluminum oxide, gallium nitride, crystalline germanium, selenium sulfide or chalcogenide glass;
the material of the second substrate layer (5) comprises: gallium arsenide, indium phosphide or indium gallium arsenide.
14. A terahertz transceiving system, comprising: the terahertz radiation source (600) and the terahertz receiving device (700) as claimed in any one of claims 1 to 13;
the terahertz radiation source (600) is used for transmitting terahertz waves to a target;
the terahertz receiving device (700) is used for receiving the terahertz waves reflected by the target.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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